TWI618141B - 晶圓處理設備中的化學物質控制特徵 - Google Patents

晶圓處理設備中的化學物質控制特徵 Download PDF

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TWI618141B
TWI618141B TW106117934A TW106117934A TWI618141B TW I618141 B TWI618141 B TW I618141B TW 106117934 A TW106117934 A TW 106117934A TW 106117934 A TW106117934 A TW 106117934A TW I618141 B TWI618141 B TW I618141B
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fluid
holes
channel
hole
plate
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梁奇偉
陳興隆
祝基恩
路柏曼斯基迪米奇
朴書南
楊章喬
凡卡塔拉曼尚卡爾
崔恩托恩
辛克里金柏利
賈格沙魯巴
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應用材料股份有限公司
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Abstract

茲描述氣體分配組合件，包括環形主體、上板材及下板材。該上板材可以界定第一複數孔，並且該下板材可以界定第二和第三複數孔。該上板材和該下板材可以彼此耦接並與該環形主體耦接，使得該第一和第二孔形成通過該氣體分配組合件的通道，並且該上板材和該下板材之間界定一容積。

Description

晶圓處理設備中的化學物質控制特徵
本技術係關於半導體製程和設備。更具體而言，本技術係關於處理系統電漿組件。
積體電路能夠被製作出係藉由在基板表面上產生錯綜複雜的圖案化材料層的製程。在基板上產生圖案化材料需要控制的方法，以去除曝光的材料。化學蝕刻被用於各式各樣的目的，包括將光阻中的圖案轉入下面的層，即已經存在表面上的薄化層或特徵的薄化橫向尺寸。往往理想的是擁有一種蝕刻一種材料的速度比蝕刻另一種材料的速度更快的蝕刻製程，以有助於例如圖案轉移製程。這樣的蝕刻製程即所謂的對第一種材料有選擇性。材料、電路及製程具有多樣性的結果是，已經開發出具有對各種材料的選擇性之蝕刻製程。
在基板處理區域內形成的局部電漿中產生的乾蝕刻可以穿透更受限的溝槽並表現出較少的細微剩餘結構變形。然而，隨著積體電路技術不斷地在尺寸上縮小，輸送前驅物的設備會影響所使用的前驅物和電漿物種之均勻性和品質。
因此，需要有可以在電漿環境中被有效使用同時提供適當降解曲線的經改良系統組件。本技術解決了這些和其他的需求。
茲描述氣體分配組合件，包括環形主體、上板材及下板材。該上板材可以界定第一複數孔，並且該下板材可以界定第二和第三複數孔。該上板材和該下板材可以彼此耦接並與該環形主體耦接，使得該第一和第二孔形成通過該氣體分配組合件的通道，並且該上板材和該下板材之間界定一容積。
該組合件可以包括環形主體，該環形主體具有位於內徑的內環形壁、位於外徑的外環形壁以及上表面和下表面。該環形主體可以進一步包括形成在該上表面中的第一上凹部、在該內環形壁形成在該下表面中的第一下凹部以及在該第一下凹部下方並從該第一下凹部徑向往外形成在該下表面中的第二下凹部。該環形主體還可以在該上表面中界定第一流體通道，該第一流體通道從該第一上凹部徑向往內位於該環形主體中。該組合件可以包括在該第一上凹部與該環形主體耦接並覆蓋該第一流體通道的上板材，並且該上板材可以界定複數個第一孔。該組合件還可以包括在該第一下凹部與該環形主體耦接的下板材，並具有界定於該下板材中的複數個第二孔，其中該第二孔與界定於該上板材中的第一孔對齊。該下板材還可以界定位於該第二孔之間的複數個第三孔。該上板材和該下板材可以彼此耦接，使得該第一孔與該第二孔對齊而形成穿過該上板材和該下板材的通道。
可以將該組合件之該上板材和該下板材黏合在一起。該組合件之該環形主體可以進一步在該上表面中界定第二流體通道，該第二流體通道位於從該第一流體通道徑向往外處，並且可以將複數個通口界定在界定該第一流體通道之外壁和該第二流體通道之內壁的一部分該環形主體中。該第二流體通道可以位於該上凹部徑向往外，使得該第二流體通道未被該上板材覆蓋。該環形主體可以在該第二流體通道之頂部附近並在該內壁和一外壁中界定第二上凹部，而且該氣體分配組合件可以包括環形構件，該環形構件位於該第二上凹部內，以便覆蓋該第二流體通道。該上凹部可以包括與該第一流體通道之該外壁相交的底部部分。
該組合件可以進一步包括一對隔離通道，其中該對隔離通道中之一者係被界定於該環形主體之該上表面中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中。該對隔離通道可以彼此垂直對齊。該第二流體通道可以位於從該上凹部徑向往內，使得在實施例中該第二流體通道被該上板材覆蓋。一部分的該上板材還可以延伸進入該第二通道到該上凹部之底部下方。該複數個通口可以從該第二流體通道往該第一流體通道向上成一角度，使得該通口在延伸進入該第二通道的該部分上板材下方可流體連通。在實施例中可以配置該隔離通道，使得該對隔離通道中之一者係在從該上凹部徑向往內的位置被界定於該上板材中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中，所以該對隔離通道彼此垂直對齊。該環形主體還可以界定環形溫度通道，該環形溫度通道設以接收冷卻流體，可操作該冷卻流體來保持該環形主體之溫度。該溫度通道還可以設以接收加熱元件，該加熱元件位於該通道內，並可操作該加熱元件來保持該環形主體之溫度。
茲亦描述可以包括環形主體的氣體分配組合件。該環形主體可以包括位於內徑的內環形壁、位於外徑的外環形壁、上表面及下表面。可以在該上表面中形成上凹部，並且可以在該下表面中形成下凹部。可以在該下表面中界定第一流體通道，該第一流體通道從該下凹部徑向往內位於該環形主體中。該組合件還可以包括在該上凹部與該環形主體耦接的上板材，其中該上板材界定複數個第一孔。該組合件還可以包括在該下凹部與該環形主體耦接並覆蓋該第一流體通道的下板材。該下板材可以界定複數個第二孔，該第二孔與界定於該上板材中的第一孔對齊。該下板材可以進一步界定複數個第三孔，該複數個第三孔位於該第二孔之間。該上板材和該下板材可以彼此耦接，使得該第一孔與該第二孔對齊而形成穿過該上板材和該下板材的通道。
該氣體分配組合件可以包括界定於該下表面中的第二流體通道，該第二流體通道從該第一流體通道徑向往外位於該環形主體中。可以將複數個通口界定在界定該第一流體通道之外壁和該第二流體通道之內壁的一部分該環形主體中，而且該複數個通口可以設以流體耦接該第二流體通道與該第一流體通道。該第二流體通道可以位於該下凹部徑向往內，使得該第二流體通道可以被該下板材覆蓋，以及其中一部分該下板材延伸進入該第二通道至該下凹部之頂部上方。該複數個通口可以從該第二流體通道往該第一流體通道向下成一角度，使得該通口在延伸進入該第二通道的該部分下板材上方可流體連通。當該第一孔延伸通過該上板材時，該第一孔還可以具有直徑減小的錐形形狀。當該第二孔和該第三孔延伸通過該下板材時，該第二孔和該第三孔可以具有直徑增加的錐形形狀。每個該第二孔和該第三孔還可以包括至少三個形狀或直徑不同的部分。
茲亦描述氣體分配組合件，該氣體分配組合件具有環形主體，該環形主體具有位於內徑的內環形壁、位於外徑的外環形壁、上表面及下表面。該組合件還可以包括與該環形主體耦接的上板材，並且該上板材可以界定複數個第一孔。中間板材可以與該上板材耦接，並且該中間板材可以界定複數個第二孔和第三孔，其中該第二孔與該上板材之該第一孔對齊。該組合件還可以包括下板材，該下板材與該環形主體和該中間板材耦接。該下板材可以界定複數個第四孔，該第四孔與該上板材之該第一孔及該中間板材之該第二孔對齊，以形成通過該等板材的第一組流體通道。該下板材還可以界定複數個第五孔，該第五孔與該中間板材之該第三孔對齊，以形成通過該中間板材和該下板材的第二組流體通道，其中該第二組流體通道係與該第一組流體通道流體隔離。該下板材可以進一步界定第六組孔，該第六組孔形成通過該下板材的第三組流體通道，其中該第三組流體通道係與該第一和第二組流體通道流體隔離。
該氣體分配組合件之該下板材可以包括的該第四、第五及第六孔之方位使得大部分的該第四孔每個皆被至少四個該第五孔和四個該第六孔包圍。該第五孔可以位於該第四孔周圍，並且該第五孔之中心繞該第四孔之中心彼此間隔約90°，並且該第六孔可以位於該第四孔周圍，並且該第六孔之中心繞該第四孔之該中心彼此間隔約90°，並從該第五孔偏離約45°。該第五孔可以位於該第四孔周圍，並且該第五孔之中心繞該第四孔之中心彼此間隔約60°，以及其中該第六孔係位於該第四孔周圍，並且該第六孔之中心繞該第四孔之該中心彼此間隔約60°，並從該第五孔偏離約30°。
這樣的技術可以提供許多優於傳統系統和技術的效益。例如，可以最少化或避免經由組合件的洩漏，以提供改良的流動特性，而得出改良的製程均勻性。此外，可以經由該組合件輸送多種前驅物，同時將該等前驅物保持彼此流體隔離。茲結合以下的描述和附圖來更詳細地描述這些和其他的實施例以及該等實施例之許多優點和特徵。
本技術包括用於散佈處理氣體的改良氣體分配組合件或噴灑頭設計，以產生用於在高度更均勻的半導體基板上形成沉積層及/或以更均勻的方式蝕刻沉積層的流動模式。雖然傳統的噴灑頭設計可以簡單地提供用於處理和前驅物氣體的直通分配系統，但現在描述的技術允許在氣體被輸送到基板處理腔室時改良地控制氣體的流動特性。在這樣做時，沉積操作可以在製造操作的過程中產生更精確的薄膜輪廓。
雖然一些傳統的氣體分配組合件或噴灑頭可以包括例如多個被板材覆蓋的流體通道，但這樣的設計例行地遭遇到在沿著板材與位在通道和內壁之間的主體部分之相交處存有縫隙。當板材與主體耦接時，例如經由黏接、硬焊等，板材可能會變形。因為只能在外邊緣周圍進行耦接，所以沒有額外的黏接可以存在於板材和主體的其他接面處。即使是輕微的板材變形也可能在上板材和環形主體之間的接面處產生不平整的表面，而發生變形的接面位置可能無法適當地與環形主體耦接。因此，在操作中，流體可能會在第一和第二流體通道之間以及在該第一流體通道和中央區域之間洩漏。這種洩漏會影響到進入處理區域的流體輸送，進而影響沉積或蝕刻。然而，本技術的各個態樣藉由提供較不可能變形的組件及/或受變形影響較小的設計克服了許多（若沒有全部）這些問題。
第1圖圖示依據所揭示實施例的沉積、蝕刻、烘烤及/或固化腔室之系統工具100的一個實施例之俯視平面圖。在該圖中，一對FOUP（前開式晶圓傳送盒）102供應基板（例如各種特定直徑的半導體晶圓），該基板由機器人手臂104接收，並在被放入串接製程腔室109a-c的其中一個基板處理部分108 a-f之前被放入低壓保持區域106。可以使用第二機器人手臂110來在保持區域106和處理腔室108a-f之間來回運送基板。
串接製程腔室109a-c的基板處理部分108a-f可以包括一或更多個系統組件，用以對基板或基板上的薄膜進行沉積、退火、固化及/或蝕刻。示例性的薄膜可以是流動性介電質，但仍有許多類型的薄膜可以使用該處理工具形成或處理。在一個架構中，可以使用處理腔室的兩對串接處理部分（例如108c-d和108e-f）在基板上沉積介電質材料，並且可以使用第三對串接處理部分（例如108a-b）對沉積的介電質進行退火。在另一種架構中，可以配置處理腔室的兩對串接處理部分（例如108c-d和108e-f）皆在基板上進行介電質薄膜的沉積和退火，同時可以使用第三對串接處理部分（例如108a-b）來紫外線（UV）或電子束固化沉積的薄膜。在仍另一種架構中，可以配置全部的三對串接處理部分（例如108a-f）在基板上進行介電質薄膜的沉積和固化或在沉積的薄膜中蝕刻出特徵。
在又另一種架構中，可以使用兩對串接處理部分（例如108c-d和108e-f）皆沉積和UV或電子束固化介電質，同時可以使用第三對串接處理部分（例如108a-b）來對介電質薄膜進行退火。另外，可以將串接處理部分108a-f中之一或更多者配置為處理腔室，而且串接處理部分108a-f中之一或更多者可以是濕式或乾式處理腔室。這些製程腔室可以包括在含有水氣的氛圍中加熱介電質薄膜。因此，系統100的實施例可以包括濕式處理串接處理部分108a-b和退火串接處理部分108c-d，以在沉積的介電質薄膜上進行濕式與乾式退火兩者。將理解的是，系統100可考量用於進行介電質薄膜之沉積、退火及固化的另外架構。
第2A圖為示例性的製程腔室部分200之剖面圖，製程腔室部分200在處理腔室內具有分開的電漿產生區域。在薄膜沉積（例如氧化矽、氮化矽、矽氧氮化物或矽氧碳化物）過程中，可以使製程氣體經由氣體入口組合件205流入第一電漿區域215。遠端電漿系統（RPS）201可以處理氣體，然後該氣體經由氣體入口組合件205前進。可以在氣體入口組合件205內看到兩個截然不同的氣體供應通道。第一通道206攜帶通過遠端電漿系統（RPS）201的氣體，而第二通道207繞過RPS 201。在揭示的實施例中，第一通道206可用於製程氣體，並且第二通道207可用於處理氣體。製程氣體可以在進入第一電漿區域215之前在遠端電漿系統（RPS）201內被激發。依據所揭示的實施例圖示蓋體212、噴灑頭225及上面放有基板255的基板支座265。蓋體212可以是金字塔形、圓錐形或具有狹窄頂部擴展到寬底部的另一個類似結構。也可以使用其他幾何形狀的蓋體212。圖示蓋體（或導電頂部）212和噴灑頭225之間具有絕緣環220，絕緣環220使得AC電勢可被相對於噴灑頭225施加到蓋體212。絕緣環220可以位於蓋體212和噴灑頭225之間，以能夠在該第一電漿區域中形成電容耦合電漿（CCP）。第一電漿區域215中可以另外放置擋板（未圖示），以影響經由氣體入口組合件205進入該區域的流體流動。
可以藉由本文所述的噴灑頭之實施例使諸如前驅物的流體（例如含矽前驅物）流入處理區域233。衍生自電漿區域215中的製程氣體的激發物種可以穿過噴灑頭225中的孔，並與從噴灑頭流入處理區域233的前驅物反應。處理區域233中存在很少電漿或沒有電漿存在。在揭示的應用中，製程氣體和前驅物的激發衍生物可以在基板上方的區域中結合，而且有時可以在基板上結合，以在基板上形成可流動的薄膜。對於流動性薄膜，隨著薄膜的生長，更晚添加的材料可以比下方的材料具有更高的流動性。隨著有機物含量因蒸發而減少，流動性可能會降低。使用這種技術可以由流動性薄膜填充縫隙，而不會在沉積完成之後在薄膜內留下傳統的有機物含量密度。仍然可以使用固化步驟來進一步減少或去除沉積薄膜的有機物含量。
在第一電漿區域215中直接激發製程氣體、在RPS中激發製程氣體或上述兩者皆可以提供幾項效益。由於第一電漿區域215中的電漿，可以增加處理區域233內衍生自製程氣體的激發物種濃度。這種增加可能因為電漿在第一電漿區域215中的位置。處理區域233可以比遠端電漿系統（RPS）201更靠近第一電漿區域215，以留下較少的時間讓激發物種經由與其他氣體分子、腔室壁及噴灑頭表面碰撞而離開激發態。
也可以增加處理區域233內衍生自製程氣體的激發物種之濃度均勻性。這可能是第一電漿區域215的形狀所導致，第一電漿區域215的形狀可以與處理區域233的形狀更相似。遠端電漿系統（RPS）201中產生的激發物種相對於通過噴灑頭225中心附近的孔的物種可以行進更遠的距離，以通過噴灑頭225邊緣附近的孔。較長的距離可以產生減少的激發物種激發，例如可能會導致在基板邊緣附近的生長速率較緩慢。在第一電漿區域215中激發製程氣體可以減輕這種變化。
處理氣體可以在RPS 201中被激發，並且可以在激發狀態中通過噴灑頭225到達處理區域233。或者，可以施加功率到第一處理區域，以激發電漿氣體或是增強來自RPS已經激發的製程氣體。雖然可以在處理區域233中產生電漿，但可以替換地不在處理區域中產生電漿。在一個實例中，處理氣體或前驅物的僅有激發可以來自於激發RPS 201中的處理氣體，以與處理區域233中的前驅物反應。
處理腔室及此討論的工具在2008年9月15日提出申請的專利申請案序號第12/210,940號和2008年9月15日提出申請的專利申請案序號第12/210,982號中有更全面的描述，在不會與所要求保護的態樣和本文的描述不一致的程度下將該等專利申請案以引用方式併入本文中。
第2B-2C圖為在本文所述處理腔室和氣體分配組合件中的前驅物流動製程之一個實施例的側面示意圖。可以將處理腔室部分200中使用的氣體分配組合件稱為雙通道噴灑頭（DCSH）或三通道噴灑頭（TCSH）並詳細描述在這裡的第3A-3G圖、第4A-4B圖及第5A-5C圖的實施例中。該雙通道或三通道噴灑頭可以允許流動性沉積介電質材料，以及在操作過程中分離前驅物和處理流體。可以替代地將該噴灑頭用於允許在反應區外面分離蝕刻劑的蝕刻製程，以提供與腔室組件的有限交互作用。
可以藉由首先引入內部噴灑頭容積294而將前驅物引入分配區，內部噴灑頭容積294係藉由第一歧管或上板材226和第二歧管或下板材227而被界定於噴灑頭225中。該等歧管可以是界定複數個孔的多孔板材。內部噴灑頭容積294中的前驅物可以經由下板材中形成的孔296流動295進入處理區域233。此流動路徑可以與腔室中其餘的製程氣體分離，並且可供處於未反應或基本上未反應狀態的前驅物使用，直到進入基板255和下板材227底部之間界定的處理區域233中。一旦在處理區域233中，則前驅物可以與處理氣體反應。可以經由噴灑頭中形成的側通道（例如如本文中的噴灑頭實施例中所圖示的通道322、422）將前驅物引入噴灑頭225中界定的內部噴灑頭容積294。製程氣體可以處於電漿狀態，該電漿狀態包括來自RPS單元或來自第一電漿區域中產生的電漿的自由基。此外，還可以在處理區域中產生電漿。
也可以提供處理氣體進入由面板材217和噴灑頭225的頂部界定的第一電漿區域215或上容積。處理氣體可以是在第一電漿區域215中被激發的電漿，以產生製程氣體電漿和自由基。或者，在引入面板材217和噴灑頭225頂部界定的第一電漿處理區域215之前，在通過遠端電漿系統之後處理氣體可以已經處於電漿狀態。
然後包括電漿和自由基的處理氣體可以經由通道（例如由噴灑頭板材或歧管中的孔形成的通道290）被輸送到處理區域233，以與前驅物反應。通過通道的處理氣體可以與內部噴灑頭容積294流體隔離，並且當處理氣體和前驅物皆通過噴灑頭225時，處理氣體可以不與通過內部噴灑頭容積294的前驅物反應。一旦在處理容積中，則處理氣體和前驅物可以混合並反應。
除了製程氣體和介電質材料前驅物之外，可以為了不同的目的在不同的時間引導其他氣體。在沉積過程中，可以引導處理氣體來從腔室壁、基板、沉積薄膜及/或薄膜去除不要的物種。可以在電漿中激發處理氣體，然後使用處理氣體來減少或去除腔室內殘留的含量。在其他所揭示的實施例中，也可以使用沒有電漿的處理氣體。當處理氣體包括水蒸汽時，可以使用質量流量計（MFM）、噴射閥或由市售的水蒸汽產生器來實現輸送。可以從第一處理區域引導處理氣體經過RPS單元或繞過RPS單元，而且可以進一步在第一電漿區域中激發處理氣體。
孔291的開口的軸292和孔296的開口的軸297可以是彼此平行或大致上彼此平行的。或者，軸292和軸297可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°。或者，每一個個別的軸292可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°，而且每個個別的軸297可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°。
個別的開口可以是傾斜的，例如第2B圖中的孔291所圖示，並且開口具有從約1°至約80°的角度，例如從約1°至約30°。孔291的開口的軸292和孔296的開口的軸297可以垂直於或大致上垂直於基板255的表面。或者，軸292和軸297可與基板表面成一定角度，例如少於約5°。
第2C圖圖示處理腔室200和噴灑頭225的局部示意圖，該示意圖說明來自內部容積294的前驅物流動295經由孔296進入處理區域233。該圖還說明圖示兩個孔296的軸297和297'彼此成一定角度的替代實施例。
第2D圖圖示依據本技術之實施例的另一個示例性處理系統200之簡化剖面圖，處理系統200可以包括替代的流體輸送系統。處理氣體的分配可以藉由使用如圖所示的面板材217來實現。可以經由流體供應系統210輸送處理氣體，並且腔室可以包括或不包括如前面所述包括RPS 201、第一電漿區域215、絕緣環220、噴灑頭225、處理區域233、基座265及基板255的組件。該系統還可以在修改後的分配系統中包括冷卻板材203。
取決於RPS 201的使用，電漿產生氣體及/或電漿激發物種可以通過面板材217中的複數個孔，如第2E圖所示，以更均勻地輸入第一電漿區域215。示例性的架構包括使氣體入口組合件205打開進入氣體供應區域258，氣體供應區域258藉由面板材217與第一電漿區域215分隔，使得氣體/物種流經面板材217中的孔進入第一電漿區域215。可以選擇結構和操作的特徵，以防止電漿從第一電漿區域215明顯回流返回進入供應區域258、氣體入口組合件205及流體供應系統210。結構特徵可以包括選擇使回流電漿失活的面板材217中的孔之尺寸和橫截面幾何形狀。操作特徵可以包括保持氣體供應區域258和第一電漿區域215之間的壓力差，該壓力 差保持電漿單向流動通過噴灑頭225。
處理系統還可以包括與處理腔室電耦接的電源240，以提供電力給面板材217及/或噴灑頭225，而在第一電漿區域215或處理區域233中產生電漿。可以設置電源來根據進行的製程輸送可調整的功率量到腔室。
第2E圖圖示影響通過面板材217的處理氣體分佈的特徵之詳細視圖。如第2D圖和第2E圖中所圖示，面板材217、冷卻板材203及氣體入口組合件205相交而界定氣體供應區域258，可以將製程氣體從氣體入口205輸入氣體供應區域258。氣體可以填充氣體供應區域258並經由面板材217中的孔259流至第一電漿區域215。可以設置孔259來以大致上單向的方式導引流動，使得製程氣體可以流入處理區域233，但也可以在穿過面板材217之後部分地或完全地防止回流進入氣體供應區域258。
另外的雙通道噴灑頭以及此處理系統和腔室被更全面地描述於2011年10月3日提出申請的專利申請案序號第13/251,714號中，為了所有的目的在不會與所要求保護的特徵和本文的描述不一致的程度下將該專利申請案以引用方式併入本文中。
第3A圖圖示氣體分配組合件300的上透視圖。在使用中，氣體分配系統300可以具有大致上水平的方位，使得穿過氣體分配系統300形成的氣體孔之軸可以垂直於或大致上垂直於基板支座的平面（參見第2A圖中的基板支座265）。第3B圖圖示氣體分配組合件300的底部透視圖。第3C圖為氣體分配組合件300的底部平面圖。第3D圖和第3E圖為氣體分配組合件300之揭示實施例沿第3C圖之線A-A所取得的剖面視圖。
參照第3A-3E圖，氣體分配組合件300通常包括環形主體340、上板材320及下板材325。環形主體340可以是具有位於內徑的內環形壁301、位於外徑的外環形壁305、上表面315及下表面310的環。上表面315和下表面310界定環形主體340的厚度。導管350或環形溫度通道可以被界定於環形主體內，並且可設以接收冷卻流體或加熱元件，冷卻流體或加熱元件可被用於維持或調節環形主體的溫度。如第3A圖所圖示，冷卻通道350可以在環形主體的外徑305上包括入口和出口。這可以提供從處理腔室側的通道，可以使冷卻流體從該通道流過。第3B圖中圖示另外的實施例，其中可以將導管355形成在底部表面310中，並且可以將加熱元件配置在導管355中。加熱器凹部342可以被形成在底部表面310中，並適用於固持加熱元件，而且加熱器凹部342提供了將加熱元件放在環形溫度通道或導管355內的通道。
可以將一或更多個凹部及/或通道形成於環形主體中或一或更多個凹部及/或通道可以由環形主體界定，如在揭示的實施例中圖示的，包括第3D圖中圖示的。環形主體可以包括形成在上表面中的上凹部303以及形成在下表面中的內環形壁301處的第一下凹部302。上凹部303可以是形成在環形主體340中的第一上凹部。環形主體還可以包括形成在下表面310中並在第一下凹部302的下方且徑向往外的第二下凹部304。如第3D圖所圖示，第一流體通道306可以被界定於上表面315中，並且可以位於環形主體中從上凹部303徑向往內處。第一流體通道306的形狀可以是環形的，並可以形成環形主體340周圍的整個距離。在揭示的實施例中，上凹部303的底部部分與第一流體通道306的外壁相交。第一流體通道也可以是從第二下凹部304至少部分地徑向往外。可以在第一流體通道的內壁中界定複數個通口312，也可以在環形主體340的內環形壁301中界定複數個通口312。通口312可以提供第一流體通道和上板材320和下板材325之間界定的內部容積之間的通道。通口可以以特定的間隔被界定於通道的外周周圍，並且可以促進上板材和下板材之間界定的整個容積區域之分配。通口312之間的間距間隔可以是固定的，或者可以在不同的位置變化，以影響進入容積的流體流動。第一流體通道306的徑向內壁和外壁可以具有相似或不相似的高度。例如，可以將內壁形成為比外壁更高，以影響流體在第一流體通道中的分佈，而避免或大致上避免流體流動於第一流體通道的內壁上方。
再次參照第3D圖，可以將第二流體通道308a界定在上表面315中，第二流體通道308a位於第一流體通道306徑向往外的環形主體中。第二流體通道308a可以是環形的，並且位於從第一流體通道306徑向往外且與第一流體通道306同心。第二流體通道308a也可以位於第一上凹部303的徑向往外，使得第二流體通道308a未被上板材320覆蓋，討論如下。第二複數個通口314可以被界定在界定第一流體通道306的外壁和第二流體通道308a的內壁的環形主體340部分中。第二複數個通口314可以位於通道周圍預先界定距離的間隔處，以在第二流體通道308a的幾個位置提供到第一流體通道306的流體通道。可以將第二上凹部309形成在第二流體通道308a的頂部中以及在第二流體通道的內壁和外壁兩者中。第二上凹部可設以接收環形構件316，環形構件316可藉由徑向往內和往外延伸進入環形主體並通過通道的內壁和外壁進入凹部空間309而被定位來覆蓋第二流體通道。可以將環形構件316與環形主體340燒黏，以從上方與第二流體通道308a流體隔絕。在操作中，前驅物可以從處理腔室的外部流至位於環形主體340側邊的輸送通道322。流體可以流入第二流體通道308a、通過第二複數通口314進入第一流體通道306、通過第一複數通口312進入上和下板材之間界定的內部容積以及通過位在底部板材中的第三孔375。因此，可以將以這樣的方式提供的流體與經由孔360輸入第一電漿區域的任何流體隔離或大致上隔離，直到流體個別離開下板材325。
藉由提供環形構件316來覆蓋第二流體通道308a，可以大致上消除第一和第二流體通道之間的洩漏，而且在揭示的實施例中可以完全消除第一和第二流體通道之間的洩漏。環形構件316可以與環形主體340耦接，例如藉由在凹部309中黏合通道的兩側。由於環形構件316並未徑向延伸超出第二流體通道308a和凹部309的寬度，故環形構件316較不易產生徑向變形。因此，可以產生改良的覆蓋輪廓，並且可以大致地或完全地防止從第二流體通道的洩漏。
上板材320可以是圓盤形的主體，並且可以在第一上凹部303與環形主體340耦接。因此，上板材320可以覆蓋第一流體通道306，以防止或大致上防止流體從第一流體通道306的頂部流出。上板材可以具有選擇來與上凹部303的直徑相配合的直徑，並且上板材可以包含複數個貫穿上板材形成的第一孔360。第一孔360可以延伸超出上板材320的底部表面，從而形成數個凸起的筒體。在每個凸起的筒體之間可以有縫隙。如第3A圖所見，可以在上板材320上將第一孔360排列成多邊形圖案，使得通過最外面的第一孔360之中心畫出的假想線界定或大致上界定多邊形的圖，該圖可以是例如六邊的多邊形。
該圖案還可以具有交錯的第一孔360之行排列的特徵，第一孔360之行數從約5至約60行，例如從約15至約25行。每一行沿著y軸可以具有從約5至約20個第一孔360，並且每一行被約0.4和約0.7英吋之間的間距隔開。在一行中的每個第一孔360可以沿著x軸與前一個孔從各自的直徑相距約0.4和約0.8英吋之間。第一孔360可以沿著x軸與另一行中的孔從各自的直徑錯開約0.2和約0.4英吋之間。在每一行中可以將第一孔360以等間距彼此隔開。參照第3D圖，上板材320的邊緣部分可以包含第二厚度，第二厚度大於位於更靠近板材中央部分的第一厚度，並且第二厚度可以等於或大致上等於第一上凹部303外壁的高度。邊緣部分可以從外邊緣徑向往內延伸等於或大致上等於上凹部之底部部分的距離。因此，在揭示的實施例中，邊緣部分可以不徑向往內延伸超過第一上凹部303的最往內部分。
下板材325可以具有圓盤形的主體，該圓盤形的主體具有數個穿過該主體形成的第二孔365和第三孔375，特別是如第3C圖所見。下板材325可以有多個厚度，並且界定部分的厚度大於上板材320的中央厚度，而且在揭示的實施例中，界定部分的下板材325厚度為上板材320厚度的至少約兩倍。下板材325還可以具有與環形主體340在第一下凹部302的內環形壁301之直徑相匹配的直徑。如前所述，下板材325可以包含多個厚度，例如板材的第一厚度可以是第三孔375延伸通過的厚度。大於第一厚度的第二厚度可以是與環形主體340的第一下凹部302相交的板材邊緣區域之厚度。可以將相對於第一下凹部的第二厚度之尺寸製作為類似於相對於第一上凹部的上板材邊緣部分。在揭示的實施例中，第一和第二厚度大致上是相似的。大於第二厚度的第三厚度可以是圍繞第二孔365的板材厚度。例如，第二孔365可以被下板材325界定為向上延伸到上板材320的筒體。以這種方式，可以在彼此流體隔離的第一和第二孔之間形成通道。此外，可以將上板材和下板材之間形成的容積與第一和第二孔之間形成的通道流體隔離。因此，流過第一孔360的流體將流過第二孔365，並且在板材之間的內部容積內的流體將流過第三孔375，而且流體將被彼此流體隔離，直到經由第二或第三孔離開下板材325為止。這種分離可以提供許多效益，包括防止自由基前驅物在到達反應區之前接觸第二前驅物。藉由防止氣體的相互作用，可以在需要沉積的處理區域之前最小化腔室內的沉積。
可以將第二孔365排列在與上述第一孔360的圖案對齊的圖案中。在一個實施例中，當將上板材320和底部板材325定位成一個在另一個的頂部時，第一孔360和第二孔365的軸是對齊的。在揭示的實施例中，上板材和下板材可以彼此耦接或直接接合在一起。在任何一種情況下，板材的耦接可以發生，使得第一和第二孔對齊而形成通過上板材和下板材的通道。複數個第一孔360和複數個第二孔365可以使各自的軸互相平行或大致上互相平行，例如孔360、365可以是同心的。或者，複數個第一孔360和複數個第二孔365可以使各自的軸相互呈約1°至約30°的角度配置。在底部板材325的中心可以沒有第二孔365。
如前所述，氣體分配組合件300通常是由環形主體340、上板材320及下板材325所組成。下板材325可以位於第一下凹部302內，並使凸起的筒體面向上板材320的底部表面，如第3D圖所圖示。然後可以將底部板材325定位在第一下凹部302中，並將底部板材325轉動定位，使得第一和第二孔360、365的軸可以對齊。可以將上板材320與底部板材325密封耦接，以將第一和第二孔360、365與第三孔375流體隔離。例如，可以將上板材320焊接於底部板材325，使得下板材325上的凸起筒體之表面和上板材320的底部表面之間產生密封。然後可以將上板材320和底部板材325以電子束焊接或其他方式結合於環形主體340。可以用電子束焊接上板材320，使得環形主體的外緣和上凹部303的內緣之間產生密封。可以用電子束焊接底部板材325，使得環形主體的外緣和內環形壁301之間產生密封。在揭示的實施例中，氣體分配組合件300的表面可以是電拋光的、鍍有金屬的或是塗有各種金屬類物質或氧化物的。
複數個第二孔365和複數個第三孔375可以形成交替的交錯行。可以將第三孔375排列在底部板材325的至少兩個第二孔365之間。在每個第二孔365之間可以有第三孔375，第三孔375在兩個第二孔365之間被均勻地隔開。還可以有數個第三孔375以六邊形的圖案位在底部板材325的中心周圍，例如6個第三孔，或是數個第三孔375形成另一種幾何形狀。底部板材325的中心可以沒有第三孔375形成。在形成第二孔多邊形圖案頂點的周邊第二孔365之間也可以沒有設置第三孔375。或者，可以有第三孔375位於周邊第二孔365之間，而且還可以有另外的第三孔375位於從周邊第二孔365往外，而形成最外環的孔，例如如第3C圖中所圖示。
或者，第一和第二孔的排列可以形成任何其他的幾何圖案，並且可以分佈成基於板材中心位置彼此同心往外設置的孔環。作為一個實例並且不限制本技術的範圍，第3A圖圖示由該等孔形成的圖案，該圖案包括從中心往外延伸的同心六邊形環。每個往外設置的環可以具有與前述往內設置的環相同數量、更多的或更少的孔。在一個實例中，基於每個環的幾何形狀，每個同心環可以具有額外數量的孔。在六邊形的實例中，每個向外移動的環可以比直接向內設置的環多6個孔，並且第一個內環具有6個孔。有了位置最接近上板材和底部板材中心的第一孔環，上板材和底部板材可以具有兩個以上的環，並且取決於所使用的孔幾何圖案，上板材和底部板材可以具有約1個和約50個之間的孔環。或者，板材可以具有約2個和約40個之間的環，或多達約30個環、約20個環、約15個環、約12個環、約10個環、約9個環、約8個環、約7個環、約6個環等或更少的環。在一個實例中，如第3A圖所圖示，在示例性的上板材上可以有9個六邊形環。
同心孔環也可以沒有其中一個同心孔環，或是同心孔環可以從其他的環之間移除向外延伸的一個孔環。例如參照第3A圖，其中板材上有示例性的9個六邊形環，但該板材可以替代地具有8個環，而且可以是第4環被移除。在這樣的實例中，可以不在原本要設置第4環的地方形成通道，這可以重新分配通過孔的氣體流體流動。這些環仍然還可以從幾何圖案移除某些孔。例如再次參照第3A圖，可以將第10個六邊形孔環形成在圖示的板材上作為最外面的環。然而，該環可以不包括可形成六邊形圖案頂點的孔或其他在該環內的孔。
第一、第二及第三孔360、365、375可以全部適用於允許流體通過其中。第一和第二孔360、365可以具有圓柱形的形狀，並且可以替代地具有各種不同的橫截面形狀，包括圓錐形、圓柱形或多種形狀的組合。在一個實例中，如第3D圖所圖示，第一和第二孔可以具有大致上圓柱形的形狀，並且第三孔可以由一系列不同直徑的圓柱所形成。例如，第三孔可以包含三個圓柱，其中第二圓柱的直徑小於其他圓柱的直徑。可以使用這些和許多其他的變化來調節流體通過該等孔的流動。
當所有的第一和第二孔具有相同的直徑時，通過通道的氣體流動可能不會是均勻的。當製程氣體流入處理腔室時，氣體的流動可以是例如較大量的氣體優先流過某些通道。因此，可以將某些孔的直徑從某些其他的孔縮小，以在前驅物流被輸入第一電漿區域時重新分配前驅物流。可以由於該等孔的相對位置（例如靠近擋板）而選擇性地縮小該等孔的直徑，因此，可以縮小靠近擋板的孔之直徑，以減少通過這些孔的製程氣體流量。在一個實例中，如第3A圖所圖示，其中9個六邊形的第一孔環同心地位於板材上，某些孔環可以使一些或全部的孔直徑縮小。例如，第4環可以包括直徑比其他環的第一孔小的第一孔子集。或者，第2環至第8環、第2環至第7環、第2環至第6環、第2環至第5環、第2環至第4環、第3環至第7環、第3環至第6環、第3環至第5環、第4環至第7環、第4環至第6環、第2環和第3環、第3環和第4環、第4環和第5環、第5環和第6環等或是一些環的其他組合可以使位在該等環中的一些或全部的孔之孔徑縮小。
再次參照第3D圖，可以將一對隔離通道318形成在環形主體340中。該對隔離通道318的其中一個可以被界定在環形主體340的上表面315中，而該對隔離通道318的另一個可以被界定在環形主體340的下表面310中。該對隔離通道可以彼此垂直對齊，而且在揭示的實施例中，該對隔離通道可以處於直接垂直對齊。或者，該對隔離通道可以在任一方向偏離垂直對齊。在揭示的實施例中，該等通道可以提供諸如O形環的隔離阻障所用的位置。
來到第3E圖，依據揭示的實施例圖示出氣體分配組合件的附加特徵，並且該等附加特徵可以包括許多上述關於第3D圖的特徵。組合件300包括具有內環形壁301、外環形壁305、上表面315及下表面310的環形主體340。環形主體340可以另外包括上凹部303、第一下凹部302及第二下凹部304。環形主體還可以具有形成在上表面315中的第一流體通道306，並具有複數個界定在內通道壁中的通口312，通口312提供流體進入上板材320和下板材325之間形成的容積的通道。下板材325可以在第一下凹部302與環形主體340耦接。下板材325還可以另外界定第一和第二孔，如以上關於第3D圖所討論的。
上板材320可以在上凹部303與環形主體340耦接。可以類似於第3D圖的第一流體通道306界定第一流體通道306。或者，第一流體通道306的內壁和外壁可以具有大致上相似的高度，而且在揭示的實施例中，第一流體通道306的內壁和外壁可以具有相同的高度。上板材320可以覆蓋第一流體通道306，以防止來自第一流體通道306頂部的流動路徑。第一複數通口312可以類似於第3D圖中的通口312被界定於環形主體中。或者，第一複數通口312可以在內環形壁301被部分地形成於上表面315中。當上板材320與環形主體340耦接時，上板材可以進一步界定複數個通口312的頂部。
可以在環形主體340的上表面315中形成第二流體通道308b，並且第二流體通道308b可設以接收通過流體輸送通道322輸送的流體，如前面所述。然而，第二流體通道308b可以位於從第一上凹部303徑向往內，使得第二流體通道308b被上板材320覆蓋。第二流體通道308b的外壁可以和上凹部303的底部相交。可以由形成第二流體通道308b內壁的部分環形主體和第一流體通道306的外壁界定第二複數通口314。該等通口可以提供第一和第二流體通道之間的流體連通，並且可以類似地位於如上所述之處。上板材320可設以在與環形主體340接觸的每個接面限制變形。例如，上板材320可以在設置孔的上板材320之中央部分中具有第一厚度，並且在板材的邊緣部分可以具有大於第一厚度的第二厚度。這些邊緣部分可以從上凹部303延伸於第二流體通道308b、第一流體通道306及內環形壁301上方。上板材320在邊緣部分增加的厚度可以更好地吸收在上板材耦接於環形主體的過程中產生的應力，從而減少變形。
部分的上板材320可以延伸進入第二流體通道308b一段距離。該部分的上板材可以延伸進入第二通道到上凹部303的底部以下一段高度。在揭示的實施例中，在上表面315中將第二流體通道308b形成到比第一流體通道306更大的深度。延伸進入第二流體通道308b的上板材320部分可以延伸到與第一流體通道306在環形主體340內的深度相同的深度。藉由使部分的上板材延伸進入第二流體通道308b，當將上板材與環形主體340耦接時可能出現的上板材變形可以不會在第一和第二流體通道之間產生任何洩漏路徑，因為變形的程度可以被上板材320延伸進入第二流體通道308b的量所克服。可以類似於第3D圖的通口314來界定第二複數通口314，或者可以類似於第一複數通口312將第二複數通口314部分地形成在上表面中。複數個通口314的頂部可以由上板材320的底部表面界定。可以在第二流體通道308b和第一流體通道306之間以垂直增加的角度形成第二複數通口314。藉由以一定的角度形成該等通口，該等通口可以不會被延伸進入第二流體通道308b的上板材部分阻塞。在揭示的實施例中，第二複數通口314可以是形成在環形主體中的各種形狀或尺寸的狹縫。可以以從第二流體通道308b往第一流體通道306增加或向上的角度形成該等狹縫，使得該等通口在上板材320延伸進入第二流體通道308b的該部分下方為流體連通的。
在揭示的實施例中，可以將一對隔離通道324形成在氣體分配組合件中，其中至少一部分的隔離通道與形成第二流體通道308b內壁和第一流體通道306內壁的部分環形主體垂直對齊。為了產生這種配置，可以將該對隔離通道中的一個界定在上板材中從第一上凹部徑向往內的位置。可以將該對隔離通道中的另一個界定在環形主體的下表面310中，並且該對隔離通道可以彼此垂直對齊。在揭示的實施例中，該對隔離通道可以處於直接垂直對齊。在操作中，隔離通道可以接收例如O型環或其他的隔離裝置。藉由在與第一和第二流體通道的共用壁至少部分對齊的位置提供隔離通道，可以使用在隔離通道產生的壓縮來偏移、減少或去除在上板材320和環形主體的界面處可能發生的變形。
參照第4A-4B圖，提供的氣體分配組合件400或噴灑頭包括第一或上板材420和第二或下板材425，並且可以將下板材425的頂部設置成與上板材420的底部耦接。上板材和下板材可以是具有複數個孔的多孔板材，該複數個孔被界定在每塊板材中。在使用中，可以用使噴灑頭中形成的任何孔的軸可以垂直於或大致上垂直於基板平面的這種方式來設定噴灑頭400對基板的方位。
參照第4B圖，環形主體440可以包括在上表面415中的上凹部403和在下表面410中的下凹部402。第一流體通道406可以被界定在下表面410中，並且可以從下凹部402徑向往內位於環形主體中。第一流體通道的形狀可以是環形的，並且該通道可以被下板材425覆蓋。可以在內環形壁401將複數個通口412至少部分地界定在環形主體中，並且可以沿著整個通道在界定的間隔處設置複數個通口412，該等間隔可以相等或是在該複數個通口各處被修改。在揭示的實施例中，下板材425可以界定複數個通口412的頂部部分。可以在上凹部403將上板材420與環形主體440耦接，並且上板材420可以界定複數個第一孔460。可以在下凹部402將下板材425與環形主體440耦接，並且下板材425可以覆蓋第一流體通道406。下板材425可以界定複數個第二孔465，複數個第二孔465可以與上板材420中界定的第一孔460對齊，以形成穿過組合件400的第一組通道。下板材425還可以界定複數個位於第二孔465之間和周圍的第三孔475。下板材425可以包括在第二孔465周圍的凸起部分，該凸起部分向上延伸到上板材420，以產生穿過組合件的流體隔離通道。
可以將上板材和下板材彼此密封耦接，使得第一和第二孔以該凸起部分對齊而形成通過上板材和下板材的通道，使得內部容積被界定於上板材和下板材之間。可以經由複數個通口412流體連接該容積。可以設置該組合件，使得第一流體可以流過第一孔並經由第一和第二孔之間形成的隔離通道延伸通過組合件400。此外，可以使第二流體經由第一流體通道406並輸入上板材和下板材之間界定的容積而流過該組合件。流過該容積的流體可以流過第三孔和下板材凸起部分的周圍，使得第一和第二流體可以經由噴灑頭流體隔離並保持分離，直到第一和第二流體分別通過第二和第三孔離開下板材為止。
可以將第一孔460成形為抑制離子帶電物種遷移出前述的第一電漿區域215，同時允許不帶電的中性或自由基物種通過噴灑頭225或氣體分配組合件400。這些不帶電的物種可以包括由較低反應性的載送氣體輸送通過孔的高反應性物種。如上所注意的，可以減少通過孔的離子物種遷移，並且在某些情況下可以完全抑制通過孔的離子物種遷移。控制通過氣體分配組合件400的離子物種量可以對被帶入而與下方的晶圓基板接觸的氣體混合物提供增多的控制，進而增加對氣體混合物之沉積及/或蝕刻特性的控制。因此，在揭示的實施例中，第一孔可以包括以漸小的直徑延伸通過上板材的錐形形狀，以控制流體的特性。具體地，此上板材可以作為離子抑制板材或離子阻擋件，使得配置有效地將離子抑制直接結合於噴灑頭設計中，而且可以不用額外需要另外的抑制元件。
每個第一孔460可以具有往第一圓柱形部分逐漸變細的錐形入口部分，該第一圓柱形部分與第二孔465相交。第二孔可以包括各種形狀的多個部分，以進一步影響通過第一和第二孔之間形成的通道的流體流動。在示例性的設計中，第二孔465可以包括多個直徑增加並通向錐形部分的圓柱形部分，該錐形部分以增加的直徑延伸到下板材425的底部。第三孔475可以同樣地包括各種形狀的多個部分，並且在示例性的配置中，第三孔475可以包括多個直徑減少並通向錐形部分的圓柱形部分，該錐形部分以增加的直徑延伸到下板材425的底部。在揭示的實施例中，該第二和第三孔包括至少三段不同的形狀或直徑。
對於離子抑制組合件，例如示例性的配置組合件400，孔的數量可以大於例如第3D圖和第3E圖的示例性組合件配置中的孔之數量。提供更大量的孔可以增加輸入腔室之處理區域的物種之密度。第4A圖圖示氣體分配組合件400的底視圖，氣體分配組合件400包括具有第二孔465和第三孔475的下板材425。雖然只圖示出四分之一圓的孔，將容易瞭解的是，該等孔係被類似地界定於該組合件的全部四個四分之一圓中。雖然第3A圖圖示示例性的9個六邊形孔環，但例如第4A圖圖示的大小類似的氣體分配組合件可以包括約18個和25個之間的孔環。在第4A-4B圖中圖示的高密度設計中的孔之總數可以包括2-10倍多的第二孔和第三孔總數。如第3E圖所圖示的高密度配置可以包括直接在板材中心的附加第二孔365。
參照回第4B圖，氣體分配組合件可以另外包括界定於下表面410中的第二流體通道408，第二流體通道408位於從第一流體通道406徑向往外的環形主體440中。可以在整個環形主體440周圍形成第二流體通道408，並且第二流體通道408還可以與第一流體通道406同心。可以將第二複數通口414界定於環形主體中的至少一部分中，所述環形主體中的至少一部分為界定第一流體通道406的外壁和第二流體通道408的內壁之部分。第二流體通道408也可以位於下凹部的徑向往內處，使得第二流體通道被下板材425覆蓋。與第4E圖中描述的設計類似，一部分的下板材可以延伸進入第二流體通道408。
該部分的下板材425可以延伸進入第二通道到下凹部402的頂部上方某個高度。在揭示的實施例中，在下表面410中將第二流體通道408形成至比第一流體通道406更高的高度。延伸進入第二流體通道408的該部分下板材425可以在環形主體440內延伸到相當於第一流體通道406或更小的高度，或延伸到相當於約第一流體通道406的一半高度的高度。如上所說明的，延伸進入第二流體通道408的下板材部分可以限制當下板材與環形主體440耦接時可能發生的下板材變形之影響。可以類似於第3D圖或第3E圖的通口來界定第二複數通口414，但是是在下表面410中。複數通口414的底部可以由下板材425的頂部表面界定。
可以在第二流體通道408和第一流體通道406之間以垂直減少的角度形成第二複數通口414。藉由以一定的角度形成該等通口，該等通口可以不會被延伸進入第二流體通道408的下板材部分阻塞。在揭示的實施例中，第二複數通口414可以是形成在環形主體中的各種形狀或尺寸的狹縫，而且可以以從第二流體通道408往第一流體通道406向下的角度形成該等狹縫，使得該等通口在下板材延伸進入第二流體通道408的該部分上方為流體連通的。在操作中，可以經由腔室中的側邊通口（例如流體輸送通道422）輸送流體通過氣體分配組合件400。流體可以流入第二流體通道408，然後通過第二複數通口414，第二複數通口414可以將第二流體通道408與第一流體通道406流體耦接。然後，流體可以流過第一複數通口412，第一複數通口412將第一流體通道406與上板材420和下板材425之間界定的容積流體耦接。流體可以繼續流過第三孔475而進入處理區域。在此配置中，可以將這樣的流體與形成通過氣體分配組合件的通道的第一和第二孔流體隔離。以此方式，該分配組合件可以防止此流體的流動進入第一孔，並且可以防止流體在沒有壓力差或強制流動下流過氣體分配組合件的頂部。
第5A圖圖示示例性的氣體分配組合件500，氣體分配組合件500設以提供到處理區域的三個隔離流體路徑。組合件500可以包括與先前所述類似的組件，包括具有位在內徑的內環形壁501、位在外徑的外環形壁505、上表面515及下表面510的環形主體540。氣體分配組合件500可以包括與環形主體540耦接的上板材520，上板材520界定第一組孔。中間板材530可以與上板材520耦接，並且可以包含複數個第二孔和複數個第三孔。可以耦接中間板材530，使得第二孔與上板材的第一孔對齊。該組合件可以另外包括與環形主體540和中間板材530耦接的下板材525。下板材525可以界定與上板材的第一孔和中間板材的第二孔對齊的複數個第四孔，以形成通過板材的第一複數流體通道561。下板材也可以界定與中間板材的第三孔對齊的第五組孔，以形成通過中間板材和下板材的第二複數流體通道566。可以將第二複數流體通道566與第一複數流體通道561流體隔離。下板材還可以界定第六組孔，該第六組孔形成通過下板材的第三複數流體通道576。可以將第三複數流體通道576與第一和第二複數流體通道流體隔離。
在操作中，可以設置氣體分配組合件，使得兩種流體可以從側邊被輸入噴灑頭但在該組合件中形成的兩個流體隔離的容積中保持流體分離。可以從氣體分配組合件500的上方輸送第一流體，並且該第一流體可以包括例如RPS或第一電漿區域產生的自由基物種。該第一流體可以流過第一複數流體通道561，可以將第一複數流體通道561個別隔離，並且無法從組合件容積內進入第一複數流體通道561。可以將第二流體從側邊通口或第一輸送通道引入噴灑頭中，第一輸送通道在上板材520和中間板材530之間輸送第二流體。第二流體可以在此第一界定的容積內流動，並通過第二複數流體通道。這些通道也可以與穿過組合件形成的其他通道流體隔離。可以將第三流體從另外的側邊通口或第二輸送通道引入噴灑頭中，第二輸送通道在中間板材530和下板材525之間輸送第三流體。第三流體可以在此第二界定的容積內流動，並通過第三複數流體通道，第三複數流體通道可以與穿過組合件形成的其他通道流體隔離。可以將另外的側邊通口或第二輸送通道以及第二界定容積與第一輸送通道和第一界定容積流體隔離。以此方式，可以將三種流體經由單一氣體分配組合件輸入處理區域，但可以將該等流體分開直到該等流體各自離開氣體分配組合件並進入處理區域。
雖然各種孔的配置也被所揭示的技術涵括，但第5B圖和第5C圖圖示第四孔567、第五孔568及第六孔577的兩個示例性配置。圖式顯示下板材525和第四、第五及第六孔的示例性方位之部分平面圖。在一些揭示的配置中，下板材可以包括的第四、第五及第六孔方位使得大部分的第四孔567每個皆被至少四個第五孔568和四個第六孔577包圍。
如第5B圖所圖示，第四孔567可以具有四個第五孔568位於每個第四孔567周圍。此外，四個第六孔577也可位於每個第四孔567的周圍。在此配置中，第五孔568a-d可以位於第四孔567周圍，並且如由圖所辨識，第五孔的中心繞著一個第四孔567的中心彼此間隔約90°。同樣地，第六孔577可以位於第四孔周圍，並且如由圖所辨識，第六孔的中心繞著第四孔567的中心彼此間隔約90°。第六孔577還可以繞著第四孔567的中心與第五孔568偏離約45°，如由圖所辨識。每個第五孔568可以另外地具有四個第六孔577，四個第六孔577繞著第五孔568的中心以彼此間隔約90°位於第五孔568的周圍，如由圖所辨識。也可以將該等孔視為基於第四孔567和第五孔568的孔之列。如第5B圖所示，第四孔567或第五孔568的每個水平列以各列的第四或第五孔與第六孔577交錯。該等列在交替的列中額外位移一個孔，使得每一個第四或第五孔在每個交替的列中具有位在上方或下方的第六孔。
如第5C圖所圖示，第四孔567可以具有四個或更多的位在每個第四孔567周圍的第五孔568。第五孔568可以與第四孔567位於交錯的行中。此外，6個第六孔577也可以被定位在每個第四孔567周圍。在此配置中，第五孔568可以位於第四孔567周圍，並且第五孔的中心繞著第四孔567的中心彼此間隔約60°，如由圖所辨識。同樣地，第六孔577可以位於第四孔周圍，並且第六孔的中心第四孔567的中心彼此間隔約60°，如由圖所辨識。第六孔577還可以繞著第四孔567的中心與第五孔568偏離約30°，如由圖所辨識。第五孔568可以位於與每個第四孔567的中心相距第一徑向距離。此外，第六孔577可以位於與每個第四孔567的中心相距第二徑向距離。如第5C圖所圖示，第二徑向距離可以小於第一徑向距離。其他揭示的實施例可以具有大於第一徑向距離的第二徑向距離。可以再次考慮該等孔為第四或第五孔的交錯水平孔列。如圖式中所示，每個第四或第五孔與同列中的下一個第四或第五孔間隔兩個第六孔。可以將孔列偏離，使得每一列位移任兩個第四或第五孔之間的一半距離，使得每隔一列的孔就第六孔577而言是對齊。
在前面的描述中，為了解釋的目的，已經提出許多細節，以提供對本發明的各種實施例的瞭解。然而，本技術領域中具有通常知識者顯而易見的是，可以在沒有部分的這些細節或具有另外的細節之情況下實施某些實施例。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離揭示的實施例之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本發明。因此，不應將以上描述視為限制本發明之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的最小分率之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本發明中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與所附申請專利範圍中使用的單數形「一」及「該」包括複數的指示對象。因此，舉例來說，提及「一孔」包括複數個該種孔，而提及「該板材」包括提及一或更多個板材及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」、「含有」及「包括」意欲指明陳述的特徵、整數、組件或步驟之存在，但該等字眼並不排除一或多個其他的特徵、整數、組件、步驟、動作或群組的存在或加入。
100‧‧‧系統工具
102‧‧‧FOUP
104‧‧‧機器人手臂
106‧‧‧保持區域
108a‧‧‧處理腔室
108b‧‧‧處理腔室
108c‧‧‧處理腔室
108d‧‧‧處理腔室
108e‧‧‧處理腔室
108f‧‧‧處理腔室
109a‧‧‧串接製程腔室
109b‧‧‧串接製程腔室
109c‧‧‧串接製程腔室
110‧‧‧第二機器人手臂
200A‧‧‧製程腔室部分
200B‧‧‧製程腔室部分
201‧‧‧遠端電漿系統
203‧‧‧冷卻板材
205‧‧‧氣體入口組合件
206‧‧‧第一通道
207‧‧‧第二通道
210‧‧‧流體供應系統
212‧‧‧蓋體
215‧‧‧第一電漿區域
217‧‧‧面板材
220‧‧‧絕緣環
225‧‧‧噴灑頭
226‧‧‧第一歧管
227‧‧‧下板材
233‧‧‧處理區域
255‧‧‧基板
258‧‧‧供應區域
259‧‧‧孔
265‧‧‧基板支座
290‧‧‧通道
291‧‧‧孔
292‧‧‧軸
294‧‧‧內部噴灑頭容積
295‧‧‧流動
296‧‧‧孔
297‧‧‧軸
297’‧‧‧軸
300‧‧‧氣體分配組合件
301‧‧‧內環形壁
302‧‧‧第一下凹部
303‧‧‧上凹部
304‧‧‧第二下凹部
305‧‧‧外環形壁
306‧‧‧第一流體通道
308a‧‧‧第二流體通道
308b‧‧‧第二流體通道
309‧‧‧凹部空間
310‧‧‧下表面
312‧‧‧第一複數通口
314‧‧‧第二複數通口
315‧‧‧上表面
316‧‧‧環形構件
318‧‧‧隔離通道
320‧‧‧上板材
322‧‧‧流體輸送通道
324‧‧‧隔離通道
325‧‧‧下板材
340‧‧‧環形主體
342‧‧‧加熱器凹部
350‧‧‧導管
355‧‧‧導管
360‧‧‧孔
365‧‧‧第二孔
375‧‧‧第三孔
400‧‧‧氣體分配組合件
401‧‧‧內環形壁
402‧‧‧下凹部
403‧‧‧上凹部
406‧‧‧第一流體通道
408‧‧‧第二流體通道
410‧‧‧下表面
412‧‧‧通口
414‧‧‧通口
415‧‧‧上表面
420‧‧‧上板材
422‧‧‧流體輸送通道
425‧‧‧下板材
440‧‧‧環形主體
460‧‧‧第一孔
465‧‧‧第二孔
475‧‧‧第三孔
500‧‧‧氣體分配組合件
501‧‧‧內環形壁
505‧‧‧外環形壁
510‧‧‧下表面
515‧‧‧上表面
520‧‧‧上板材
525‧‧‧下板材
530‧‧‧中間板材
540‧‧‧環形主體
561‧‧‧第一複數流體通道
566‧‧‧第二複數流體通道
567‧‧‧第四孔
568‧‧‧第五孔
568a‧‧‧第五孔
568b‧‧‧第五孔
568c‧‧‧第五孔
568d‧‧‧第五孔
576‧‧‧第三複數流體通道
577‧‧‧第六孔
藉由參照本說明書的剩餘部分及圖式可以實現對揭示的技術之本質與優點的進一步瞭解。
第1圖圖示示例性處理工具之一個實施例的俯視圖。
第2A-2E圖圖示示例性處理腔室之示意性剖面圖。
第3A-3E圖圖示依據所揭示技術的示例性噴灑頭架構之示意圖。
第4A-4B圖圖示依據所揭示技術的示例性噴灑頭架構之附加示意圖。
第5A-5C圖圖示依據所揭示技術的示例性噴灑頭架構之附加示意圖。
在附圖中，相似的組件及/或特徵可以具有相同的數字參考標號。此外，相同類型的各個組件可以藉由在該參考標號之後接續字母來進行區分，該字母可以在類似的組件及/或特徵之間進行區分。假使只在說明書中使用第一數字參考標號，則該描述係適用於任何一個具有相同第一數字參考標號的類似組件及/或特徵，而與該字母下標無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
200A‧‧‧製程腔室部分
201‧‧‧遠端電漿系統
205‧‧‧氣體入口組合件
206‧‧‧第一通道
207‧‧‧第二通道
215‧‧‧第一電漿區域
217‧‧‧面板材
220‧‧‧絕緣環
225‧‧‧噴灑頭
233‧‧‧處理區域
255‧‧‧基板
265‧‧‧基板支座

Claims (20)

  1. 一種基板處理腔室，包含：一面板；一噴灑頭，包含：一環形主體，包含：一內環形壁、一外環形壁、一上表面及一下表面，該內環形壁位於一內徑，且該外環形壁位於一外徑；一第一流體通道，界定於該上表面中，該第一流體通道從一上凹部徑向往內而位於該環形主體中；以及一第二流體通道，界定於該上表面中，該第二流體通道從該第一流體通道徑向往外而位於該環形主體中；以及一上板材，在該上凹部處與該環形主體耦接，並覆蓋該第一流體通道，其中該上板材界定複數個第一孔，其中一遠端電漿區域係至少部分地界定於該面板與該噴灑頭之間。
  2. 如請求項1所述之基板處理腔室，進一步包含：一下板材，與該上板材黏合。
  3. 如請求項1所述之基板處理腔室，其中複數個通口界定在該環形主體的一部分中，該環形主體的 該部分界定該第一流體通道之一外壁及該第二流體通道之一內壁。
  4. 如請求項1所述之基板處理腔室，其中該第二流體通道位於該上凹部徑向往外處，使得該第二流體通道未被該上板材覆蓋。
  5. 如請求項4所述之基板處理腔室，其中一第二上凹部由該環形主體界定於該第二流體通道之一頂部附近並在該內壁和一外壁二者中。
  6. 如請求項5所述之基板處理腔室，進一步包含：一環形構件，安置於該第二上凹部內，以便覆蓋該第二流體通道。
  7. 如請求項1所述之基板處理腔室，其中該上凹部界定一突出部(ledge)與該第一流體通道之該外壁相交。
  8. 如請求項1所述之基板處理腔室，進一步包含：一對隔離通道，其中該對隔離通道中之一者係被界定於該環形主體之該上表面中，且該對隔離通道中之另一者係被界定於該環形主體之該下表面中，且其中該對隔離通道彼此在垂直方向上對齊。
  9. 如請求項1所述之基板處理腔室，其中該第二流體通道位於該上凹部徑向往內處，使得該第二流體通道被該上板材覆蓋。
  10. 如請求項9所述之基板處理腔室，其中該上板材的一部分延伸進入該第二通道至該上凹部之一底部下方。
  11. 如請求項10所述之基板處理腔室，其中該複數個通口從該第二流體通道往該第一流體通道向上成一角度，使得在延伸進入該第二通道之該上板材的該部分下方可流體連通該等通口。
  12. 如請求項9所述之基板處理腔室，進一步包含：一隔離通道，界定於該環形主體之該下表面中。
  13. 如請求項1所述之基板處理腔室，進一步包含：一環形溫度通道，界定於該環形主體中，並經配置以接收一冷卻流體，可操作該冷卻流體來保持該環形主體之一溫度。
  14. 如請求項1所述之基板處理腔室，進一步包含：一環形溫度通道，界定於該環形主體中，並經配置以接收一加熱元件，該加熱元件設置於該通道內，並可操作該加熱元件來保持該環形主體之一溫度。
  15. 一種半導體處理系統，包含：一遠端電漿單元；以及一處理腔室，流體耦接該遠端電漿單元，該處理腔室包含：一面板； 一基板支座；一噴灑頭，包含：一環形主體，包含：一內環形壁、一外環形壁、一上表面及一下表面，該內環形壁位於一內徑，且該外環形壁位於一外徑；一上凹部，形成於該上表面中；一下凹部，形成於該下表面中；一第一流體通道，界定於該下表面中，該第一流體通道從該下凹部徑向往內而位於該環形主體中；以及一第二流體通道，界定於該下表面中，該第二流體通道從該第一流體通道徑向往外而位於該環形主體中；以及一上板材，在該上凹部處耦接該環形主體，其中該上板材界定複數個第一孔；以及一下板材，在該下凹部處耦接該環形主體，並覆蓋該第一流體通道，該下板材包含：複數個第二孔，界定於該下板材中，其中該等第二孔與界定於該上板材中的該等第一孔對齊；複數個第三孔，界定於該下板材中，並位 於該等第二孔之間；其中該上板材與該下板材彼此耦接，使得該第一孔與該第二孔對齊而形成一通道，該通道穿過該上板材和該下板材；一第一電漿區域，界定於該面板與該噴灑頭之間；以及一第二電漿區域，界定於該噴灑頭與該基板支座之間。
  16. 如請求項15所述之半導體處理系統，其中複數個通口界定在該環形主體的一部分中，該環形主體的該部分界定該第一流體通道之一外壁及該第二流體通道之一內壁，其中該複數個通口經配置以流體耦接該第二流體通道與該第一流體通道。
  17. 如請求項15所述之半導體處理系統，其中該第二流體通道係位於該下凹部徑向往內處，使得該第二流體通道被該下板材覆蓋，且其中該下板材的一部分延伸進入該第二通道至該下凹部之一頂部上方。
  18. 如請求項17所述之半導體處理系統，其中該複數個通口從該第二流體通道往該第一流體通道向下成一角度，使得在延伸進入該第二通道之該下板材的該部分上方可流體連通該等通口。
  19. 如請求項15所述之半導體處理系統，其中 當該等第一孔延伸通過該上板材時，該等第一孔包含直徑減小的一錐形形狀，且其中當該等第二孔和該等第三孔延伸通過該下板材時，該等第二孔和該等第三孔包含直徑增加的一錐形形狀。
  20. 如請求項15所述之半導體處理系統，其中該等第二孔和該等第三孔各包含形狀或直徑不同的至少三個部分。
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