JP7366918B2 - 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 - Google Patents
誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 Download PDFInfo
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- JP7366918B2 JP7366918B2 JP2020547224A JP2020547224A JP7366918B2 JP 7366918 B2 JP7366918 B2 JP 7366918B2 JP 2020547224 A JP2020547224 A JP 2020547224A JP 2020547224 A JP2020547224 A JP 2020547224A JP 7366918 B2 JP7366918 B2 JP 7366918B2
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- 238000005530 etching Methods 0.000 claims description 165
- 239000007789 gas Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 65
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 16
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- -1 NF5 Chemical compound 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 10
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- 238000000231 atomic layer deposition Methods 0.000 claims description 8
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 8
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- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
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- 239000011737 fluorine Substances 0.000 description 16
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- 238000006467 substitution reaction Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JYIFRKSFEGQVTG-UHFFFAOYSA-J tetrachlorotantalum Chemical compound Cl[Ta](Cl)(Cl)Cl JYIFRKSFEGQVTG-UHFFFAOYSA-J 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
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- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
本願は、2018年3月16日出願の米国仮特許出願第62/644,095号の利益を主張し、その仮特許出願は、参照によってすべての目的に対して本明細書に組み込まれる。
図2は、一実施形態で利用できるエッチングリアクタ200を示す概略図である。1以上の実施形態において、エッチングリアクタ200が、チャンバ壁252によって囲まれたエッチングチャンバ209内に、ガス流入口を提供するガス分配プレート206と、静電チャック(ESC)208とを備える。エッチングチャンバ209内で、スタック204が、ESC208上に配置される。ESC208は、ESC源248からバイアスを供給しうる。エッチングガス源210が、ガス分配プレート206を通してエッチングチャンバ209に接続されている。ESC温度コントローラ250が、冷却剤215を冷やす冷却器214に接続されている。この実施形態において、冷却器214は、ESC208の中または近くにある流路217へ冷却剤215を供給する。高周波(RF)源230が、RF電力を下側電極および/または上側電極へ供給し、それらの電極は、この実施形態においては、それぞれ、ESC208およびガス分配プレート206である。例示的実施形態において、400キロヘルツ(kHz)、60メガヘルツ(MHz)、および、任意選択的に2MHz、27MHzの電源が、RF源230およびESC源248を構成する。この実施形態においては、上側電極が接地されている。この実施形態においては、各周波数に対して1つの発生器が提供されている。別の実施形態において、複数の発生器が、別個のRF源内にあってもよいし、別個のRF発生器が、異なる電極に接続されてもよい。例えば、上側電極は、異なるRF源に接続された内側および外側電極を有してよい。RF源および電極の他の構成が、他の実施形態で用いられてもよい。コントローラ235が、RF源230、ESC源248、排気ポンプ220、および、エッチングガス源210に制御可能に接続されている。かかるエッチングチャンバの一例は、カリフォルニア州フレモントのラムリサーチ社製 のFlex(商標)エッチングシステムである。処理チャンバは、CCP(容量結合型プラズマ)リアクタまたはICP(誘導結合プラズマ)リアクタであってよい。
[適用例1]エッチングチャンバ内でパターニング済みマスクの下方のスタックにフィーチャをエッチングするための方法であって、
a)冷却剤で前記スタックを冷却し、冷却剤温度が-20℃未満であり、
b)前記エッチングチャンバ内にエッチングガスを流し、
c)前記エッチングガスからプラズマを生成し、
d)前記パターニング済みマスクに対して前記スタック内のフィーチャを選択的にエッチングすること、
を備える、方法。
[適用例2]適用例1に記載の方法であって、さらに、少なくとも400ボルトの大きさのバイアスを供給することを備える、方法。
[適用例3]適用例1に記載の方法であって、前記エッチングガスは、酸素を含まない、方法。
[適用例4]適用例1に記載の方法であって、前記エッチングガスは、エッチャント成分を含み、前記エッチャント成分は、CF 4 、SF 6 、NF 3 、XeF 2 、WF 6 、SiF 4 、TaF 5 、IF 7 、HF、ClF 5 、BrF 5 、AsF 5 、NF 5 、PF 5 、NbF 5 、BiF 5 、UF 5 、SiCl 2 、CrO 2 Cl 2 、SiCl 4 、TaCl 4 、HfCl 4 、TiCl 3 (l)、TiCl 4 (l)、CoCl 2 (l)、TiCl 3 、および、TiCl 2 、の内の少なくとも1つを含む、方法。
[適用例5]適用例1に記載の方法であって、前記エッチングガスは、不動態化成分を含み、前記不動態化成分は、CF 4 、CHF 3 、CH 3 F、CCl 4 、CF 3 I、CBr 2 F 2 、C 2 HF 5 、C 2 F 5 Br、H 2 、O 2 、H 2 O、H 2 O 2 、BCl 3 、NH 3 、COS、CO、SF 6 、および、SiF 4 、の内の少なくとも1つを含む、方法。
[適用例6]適用例1に記載の方法であって、前記エッチングガスは、不動態化成分を含み、前記不動態化成分は、CrO 2 Cl 2 、SiCl 4 、SOCl 2 、TiCl 2 、TiCl 3 、および、CoCl 2 、の内の少なくとも1つを含む、方法。
[適用例7]適用例1に記載の方法であって、前記スタックは、-20℃未満の温度に冷却される、方法。
[適用例8]適用例1に記載の方法であって、前記スタックは、-60℃未満の温度に冷却される、方法。
[適用例9]適用例1に記載の方法であって、前記エッチングガスは、原子層エッチングガスまたは原子層蒸着ガスであり、前記エッチングガスからの前記プラズマは、前記スタックの層を改質して、改質層を提供し、
前記方法は、さらに、
e)前記プラズマの生成を停止し、
f)前記プラズマの生成を停止した後に、前記スタックの前記改質層を活性化させること、
を備える、方法。
[適用例10]適用例9に記載の方法であって、前記b)からf)は、複数回繰り返される、方法。
[適用例11]適用例10に記載の方法であって、前記スタックの前記改質層を活性化させることは、前記改質層を加熱し、前記改質層に照射を行い、または、前記改質層と化学的に反応するようにガスを流すこと、の内の少なくとも1つを含む、方法。
[適用例12]適用例1に記載の方法であって、さらに、少なくとも1000ボルトの大きさのバイアスを供給することを備える、方法。
[適用例13]適用例1に記載の方法であって、前記エッチングガスは、フッ素供給成分、水素含有成分、炭化水素含有成分、フッ化炭素含有成分、および、ヨウ素含有成分、の内の少なくとも1つを含む、方法。
[適用例14]適用例1に記載の方法であって、前記フィーチャは、20:1より大きい高さ対幅のアスペクト比を有する、方法。
[適用例15]適用例1に記載の方法であって、前記エッチングガスは、金属ハロゲン化物ガスを含む、方法。
[適用例16]適用例1に記載の方法であって、前記スタックは、誘電体層を含む、方法。
[適用例17]適用例1に記載の方法であって、前記スタックは、窒化シリコン、炭化シリコン、または、酸化シリコンの少なくとも1つの層を備える、方法。
Claims (19)
- エッチングチャンバ内でパターニング済みマスクの下方のスタックにフィーチャをエッチングするための方法であって、
a)冷却剤で前記スタックを冷却し、冷却剤温度が-20℃未満であり、
b)前記エッチングチャンバ内にエッチングガスを流し、
c)前記エッチングガスからプラズマを生成し、
d)前記パターニング済みマスクに対して前記スタック内のフィーチャを選択的にエッチングすること、を備え、
前記エッチングガスは、原子層エッチングガスまたは原子層蒸着ガスであり、前記エッチングガスからの前記プラズマは、前記スタックの層を改質して、改質層を提供し、
前記方法は、さらに、
e)前記プラズマの生成を停止し、
f)前記プラズマの生成を停止した後に、前記スタックの前記改質層を活性化させること、
を備える、方法。 - 請求項1に記載の方法であって、さらに、少なくとも400ボルトの大きさのバイアスを供給することを備える、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、酸素を含まない、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、エッチャント成分を含み、前記エッチャント成分は、CF4、SF6、NF3、XeF2、WF6、SiF4、TaF5、IF7、HF、ClF5、BrF5、AsF5、NF5、PF5、NbF5、BiF5、UF5、SiCl2、CrO2Cl2、SiCl4、TaCl4、HfCl4、TiCl3(l)、TiCl4(l)、CoCl2(l)、TiCl3、および、TiCl2、の内の少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、不動態化成分を含み、前記不動態化成分は、CF4、CHF3、CH3F、CCl4、CF3I、CBr2F2、C2HF5、C2F5Br、H2、O2、H2O、H2O2、BCl3、NH3、COS、CO、SF6、および、SiF4、の内の少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、不動態化成分を含み、前記不動態化成分は、CrO2Cl2、SiCl4、SOCl2、TiCl2、TiCl3、および、CoCl2、の内の少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、前記スタックは、-20℃未満の温度に冷却される、方法。
- 請求項1に記載の方法であって、前記スタックは、-60℃未満の温度に冷却される、方法。
- 請求項1に記載の方法であって、前記b)からf)は、複数回繰り返される、方法。
- 請求項9に記載の方法であって、前記スタックの前記改質層を活性化させることは、前記改質層を加熱し、前記改質層に照射を行い、または、前記改質層と化学的に反応するようにガスを流すこと、の内の少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、さらに、少なくとも1000ボルトの大きさのバイアスを供給することを備える、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、フッ素供給成分、水素含有成分、炭化水素含有成分、フッ化炭素含有成分、および、ヨウ素含有成分、の内の少なくとも1つを含む、方法。
- 請求項1に記載の方法であって、前記フィーチャは、20:1より大きい高さ対幅のアスペクト比を有する、方法。
- 請求項1に記載の方法であって、前記エッチングガスは、金属ハロゲン化物ガスを含む、方法。
- 請求項1に記載の方法であって、前記スタックは、誘電体層を含む、方法。
- 請求項1に記載の方法であって、前記スタックは、窒化シリコン、炭化シリコン、または、酸化シリコンの少なくとも1つの層を備える、方法。
- エッチングリアクタであって、
エッチングチャンバと、
ウエハを支持するための静電チャックと、
前記静電チャックに冷却剤を供給するための冷却剤流路と、
冷却剤を-20℃未満の温度に冷却できる、冷却剤を冷やすための冷却器と、
前記エッチングチャンバにエッチングガスを供給するためのエッチングガス源と、
エッチングチャンバにRF電力を供給するためのRF電源と、
前記RF電源、前記エッチングガス源、および前記冷却器に制御可能に接続されているコントローラであって、
a)前記冷却剤を-20℃未満の冷却剤温度まで冷却することを前記冷却器に行わせ、
b)前記エッチングチャンバにエッチングガスを流し、
c)前記エッチングガスからプラズマを生成させて、パターニング済みマスクに対してフィーチャを選択的にエッチングするように構成されている、コントローラと、を備え、
前記エッチングガスは、原子層エッチングガスまたは原子層蒸着ガスであり、前記エッチングガスからの前記プラズマは、前記エッチングチャンバ内に配置されているスタックの層を改質して、改質層を提供し、
前記コントローラは、さらに、
e)前記プラズマの生成を停止し、
f)前記プラズマの生成を停止した後に、前記スタックの前記改質層を活性化させるように構成されている、
エッチングリアクタ。 - 請求項17に記載のエッチングリアクタであって、
前記コントローラは、さらに、前記静電チャックに、少なくとも400ボルトの大きさのバイアスを供給させるように構成されている、エッチングリアクタ。 - 請求項17に記載のエッチングリアクタであって、
前記コントローラは、さらに、前記冷却器に、前記冷却剤を-60℃未満の冷却剤温度に冷却させるように構成されている、エッチングリアクタ。
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