TWI768093B - 電漿蝕刻製程中使用塗佈部件的製程裕度擴充 - Google Patents

電漿蝕刻製程中使用塗佈部件的製程裕度擴充 Download PDF

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TWI768093B
TWI768093B TW107127202A TW107127202A TWI768093B TW I768093 B TWI768093 B TW I768093B TW 107127202 A TW107127202 A TW 107127202A TW 107127202 A TW107127202 A TW 107127202A TW I768093 B TWI768093 B TW I768093B
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冬青 楊
天發 陳
彼得 希爾曼
朱拉拉
尼汀Ｋ 英格爾
迪米奇 路柏曼斯基
克里斯托弗 斯奈迪格
明 夏
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美商應用材料股份有限公司
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Abstract

本技術的實施例可包括一種蝕刻方法。該方法可包括在腔室的第一部分中混合電漿流出物與氣體以形成第一混合物。該方法亦可包括在腔室的第二部分中使第一混合物流到基板。第一部分及第二部分可包括鍍鎳材料。該方法可進一步包括使第一混合物與基板反應以相對於第二層選擇性蝕刻第一層。此外，該方法可包括形成第二混合物，該第二混合物包括來自第一混合物與基板反應的產物。

Description

電漿蝕刻製程中使用塗佈部件的製程裕度擴充
本技術係關於半導體製程及設備。更具體而言，本技術係關於在低壓蝕刻操作期間改良製程選擇性。
積體電路可能由在基板表面上產生複雜圖案化之材料層的製程來製成。在基板上產生圖案化材料需要用於移除暴露材料的受控方法。出於各種目的使用化學蝕刻，包括將光阻劑中的圖案轉移至下層中、薄化層或薄化已經在表面上存在的特徵的橫向尺寸。通常期望具有與另一種材料相比更快速地蝕刻一種材料的蝕刻製程，從而促進例如圖案轉移製程。認為此蝕刻製程對第一材料具有選擇性。由於材料、電路和製程的多樣性，已經開發出具有相對於各種材料的選擇性之蝕刻製程。
在基板處理區域內形成的局部電漿中產生的乾式蝕刻可以穿透更受限制的溝槽，並且與濕式蝕刻相比，展現脆弱剩餘結構的較少形變。然而，儘管蝕刻製程可相對於第二材料對第一材料具有選擇性，但第二材料的一些不期望蝕刻仍可發生。
因此，存在對可以用於產生高品質元件及結構的經改良系統及方法的需要。該等及其他需要由本技術解決。
隨著半導體元件變得更小，圖案化該等元件可變得更具挑戰性。較小特徵可更難以界定。這可由於效能、可靠性及製造產出量所需的減小大小或更嚴格容差而導致。下文描述的方法可提供經改良的圖案化製程。
由鍍鎳材料使電漿流出物及氣體的混合物流動可允許以較低壓力蝕刻。藉由促進蝕刻劑行進到窄且深的特徵底部而不接觸及蝕刻側壁，較低壓力處理可有利於較小且較深半導體特徵。鍍鎳可藉由在較低壓力下維持低的矽蝕刻量來增加選擇性。不意欲受限於理論，咸信鎳可清除氟自由基或氫自由基，而氟自由基或氫自由基正是不當矽蝕刻的原因。鎳可塗佈在大量混合氣體與電漿蝕刻劑下游的腔室部件。鎳可沿著混合下游的腔室中的電漿流出物的流動路徑塗佈所有部件。
本技術的實施例可包括一種半導體處理系統。該系統可包括遠端電漿區域。該系統亦可包括由通道與遠端電漿區域流體耦合的處理區域。該系統可進一步包括流體耦合至通道的進氣口。進氣口可界定在進入處理區域之前不經過遠端電漿區域的氣體的流動路徑。處理區域可包括經配置以支撐基板的基座。處理區域可至少部分由側壁及噴淋頭界定。側壁及噴淋頭可鍍有鎳。
本技術的實施例可包括一種蝕刻方法。該方法可包括在腔室的第一部分中混合電漿流出物與氣體以形成第一混合物。該方法亦可包括在腔室的第二部分中使第一混合物流到基板。第一部分及第二部分可包括鍍鎳材料。該方法可進一步包括使第一混合物與基板反應以相對於第二層選擇性蝕刻第一層。此外，該方法可包括形成第二混合物，該第二混合物包括來自第一混合物與基板反應的產物。
本技術的實施例可包括一種蝕刻方法。該方法可包括使包括氨及含氟氣體的第一氣體流過電漿以形成電漿流出物。該方法亦可包括使電漿流出物流過腔室的第一部分。第一部分可能不包括鍍鎳材料。該方法可進一步包括在腔室的第二部分中使包括氨的第二氣體與電漿流出物混合以形成第一混合物。此外，該方法可包括在腔室的第三部分中使第一混合物流到基板。該方法亦可包括使第一混合物與基板反應以相對於矽層選擇性蝕刻氧化矽層。隨後，該方法可包括形成第二混合物，該第二混合物包含來自第一混合物與基板反應的產物。第二混合物可流過腔室的第四部分以離開腔室。第二部分、第三部分及第四部分可包括鍍鎳材料。
用於蝕刻氧化矽的習知系統及方法可能不適用於低壓。低壓對於較小且較深半導體特徵而言可能係較佳的。然而，在較低壓力下，蝕刻選擇性可能降低。例如，在較低壓力下蝕刻熱氧化物期間，熱氧化物的蝕刻量可能降低，而矽的蝕刻量可能增加。在低壓下，反應成分（諸如自由基）的密度降低。因此，熱氧化物的蝕刻速率可能降低。未反應或未完全反應的物質亦可能在腔室中存在。在較低壓力下，此等未反應的物質（例如，氟自由基或氫自由基）可在基板中與矽反應，從而增加矽的蝕刻速率。習知方法在增加的腔室壓力下蝕刻以使自由基與基板或其他氣體物質反應。
本技術的實施例可允許低壓蝕刻熱氧化物而不實質上降低相對於矽蝕刻的選擇性。鍍鎳的腔室部件可減少未反應自由基的量。在較少未反應自由基的情況下，自由基更可能蝕刻熱氧化物並且不呈現對矽的蝕刻。 I.系統概述
如第 1 圖 中所示，本技術的實施例可包括半導體處理系統100。系統100可包括遠端電漿區域。遠端電漿區域可包括遠端電漿源102。
系統100亦可包括由隔離器104界定的通道與遠端電漿區域流體耦合的處理區域。隔離器104可為陶瓷材料，諸如氧化鋁。隔離器104可能不鍍有鎳。處理區域可包括從氣體與電漿流出物混合處到電漿流出物與基板反應以離開腔室處的腔室區。處理區域可包括從隔離器104到埠但不包括隔離器104的區域，該埠係從腔室到泵的。
系統100可進一步包括流體耦合至隔離器104的進氣口106。進氣口可界定在進入處理區域之前不經過遠端電漿區域的氣體的流動路徑。來自電漿源102的電漿流出物可穿過輸入口108進入隔離器104。進氣口106和輸入口108可設置在遠端電漿源(remote plasma source; RPS)配接器110中。RPS配接器110允許遠端電漿源連接到腔室。RPS配接器110、進氣口106及輸入口108可能不鍍有鎳。
隔離器104的下游為混合歧管112。混合歧管112可界定實質上不是直的流動路徑。例如，混合歧管可包括流動路徑大小的減小（例如，漸縮）及/或擴展，以使氣體與電漿流出物混合。混合歧管112可通向氣盒114。氣盒加熱器116可設置在氣盒114上。
在氣盒114之後，系統100可經配置為使得電漿流出物及其他氣體經過均勻阻隔器118、均勻面板120及均勻選擇性模組化元件(selective modular device; SMD) 122。系統100可包括至少部分由均勻SMD 122及間隔件124界定的反應區域。反應區域可為處理區域的一部分。
處理區域可包括經配置以支撐基板的基座126。基座可鍍有鎳，但由於基板可覆蓋基座，鍍鎳基座可能不影響蝕刻的選擇性。基板可為半導體晶圓，包括矽晶圓。系統100可包括設置在基座126的圓周上的圓環（例如，邊緣環128）。圓環可鍍有鎳。
系統100可包括泵送襯墊/通道130。泵送襯墊/通道130可包括從腔室到泵的出口。系統100亦可包括蓋板嵌件132。
處理區域可包括從混合歧管112到泵送襯墊/通道130界定的區域。處理區域可至少部分由側壁（例如，間隔件124或形成腔室壁的任何部件）及噴淋頭（例如，均勻SMD 122）界定。側壁及噴淋頭可鍍有鎳。從混合歧管112中混合氣體到泵送襯墊/通道130的一些或所有表面可具有鍍鎳表面，包括例如，無電鍍鎳或電鍍鎳。無電鎳可包括有硼鎳或有磷鎳。隔離器104下游的部件可具有鍍鎳表面。換言之，混合歧管112、氣盒114、均勻阻隔器118、均勻面板120、均勻SMD 122、間隔件124、邊緣環128及泵送襯墊/通道130可鍍有鎳或清除過量自由基的另一種金屬。壓力板、入口配接器及擴散器（未在第1圖中圖示，但在第8圖中圖示）可在隔離器104與混合歧管112之間，並且各者可鍍有鎳或清除過量自由基的另一種金屬。其他金屬可包括鉑或鈀，但二者均可能太過昂貴。鍍有鎳的部件可包括鍍覆之前與鎳不同的金屬。例如，部件可包括不鏽鋼或鋁。
第1圖係系統的簡圖。第8圖圖示了系統的類似圖且在下文描述。熟習此項技術者將理解第8圖中的從混合電漿流出物與隔離器104下游的氣體（例如，從壓力板4025）到離開腔室的任何部件（例如，金屬部件）可鍍有鎳。 II.方法
實施例包括蝕刻方法，該等方法可使用本文描述的蝕刻系統。 A.示例方法
如第 2 圖 中所示，本技術之實施例可包括蝕刻方法200。在方塊202中，方法200可包括在腔室的第一部分中混合電漿流出物與氣體以形成第一混合物。電漿流出物可包括來自使氨及含氟氣體流過電漿的流出物。含氟氣體可包括NF3 及/或HF。在一些實施例中，電漿流出物可包括來自使氨、NF3 、氬、H2 、氦及HF流過電漿的流出物。第一部分可包括鍍鎳材料，包括無電鍍鎳材料。第一部分可包括混合歧管，類似第1圖中的混合歧管112。在實施例中，第一部分可包括漸縮路徑（例如，第8圖中的中心孔4023）。與非漸縮路徑相比，漸縮路徑可混合更多氣體，這可允許鍍鎳部件清除自由基。氣體可包括氨或氫。
在混合電漿流出物之前，電漿流出物可流過腔室的不包括鍍鎳材料的部分。在引入氣體之前的腔室部件可能不鍍有鎳。例如，在第1圖中，RPS配接器110可能不鍍有鎳。與期望結果相反，用鎳鍍覆RPS配接器可減少所蝕刻氧化矽的量，但增加所蝕刻多晶矽的量。非金屬（例如，陶瓷）或不允許充分混合電漿流出物與氣體的腔室部件亦可不鍍有鎳。例如，在第1圖中，隔離器104係陶瓷並且不可容易地鍍鎳。此外，隔離器104不提供用於大量混合電漿流出物與氣體的幾何形狀。
在方塊204中，方法200亦可包括在腔室的第二部分中使第一混合物流到基板。腔室的第二部分可在10 Torr或更低的壓力下，該壓力可包括8至10 Torr、6至8 Torr、4至6 Torr、2至4 Torrr、1至2 Torr、或低於1 Torr。腔室的第二部分可包括基座，在處理期間基板可位於該基座處。第二部分可包括鍍鎳材料，包括本文描述的任何鍍鎳材料。第一混合物可在腔室中在從第一部分到第二部分的路徑中流動。路徑可由腔室的鍍鎳部件界定。從大量混合電漿流出物與氣體到腔室出口的路徑可由鍍有鎳的表面界定，不由未鍍有鎳的表面中斷。
在方塊206中，方法200可進一步包括使第一混合物與基板反應以相對於第二層選擇性蝕刻第一層。第一層可為熱氧化矽層。第二層可為矽層，包括多晶矽層。第二層可為任何層，該層可由氟自由基或氫自由基蝕刻。使第一混合物與基板反應可包括蝕刻小於1埃的第二層及大於50埃的第二層。在實施例中，第二層可具有大於50埃、大於100埃、200埃或300埃的蝕刻量，而第一層具有小於1埃的蝕刻量，包括小於0.5埃或約0埃。相對於矽蝕刻氧化物的選擇性可大於100、200、300、400、500、600、700、800、900或1000。
在方塊208中，方法200可包括形成第二混合物，該第二混合物包括來自第一混合物與基板反應的產物。方法200亦可包括使第二混合物流過腔室的一部分以離開腔室，其中通向離開腔室的腔室表面包括鍍鎳材料。例如，在第1圖中，泵送襯墊/通道130可為鎳鍍的。
方法200可包括將氟原子或氫原子吸附至鍍鎳材料上。從與基板反應移除氟原子或氫原子可幫助維持矽的可忽略的蝕刻同時蝕刻熱氧化物。
方法200可進一步包括從腔室移除基板並在基板上執行額外圖案化操作。 B.示例方法
如第 3 圖 中所示，本技術之實施例可包括蝕刻方法300。在方塊302中，方法300可包括使包括氨及含氟氣體的第一氣體流過電漿以形成電漿流出物。第一氣體可係本文描述的任何氣體。
在方塊304中，方法300亦可包括使電漿流出物流過腔室的第一部分。第一部分可能不包括鍍鎳材料。第一部分可包括非金屬或不具有電漿流出物與氣體的充分混合的腔室部件。第一部分可係如本文描述的未鍍有鎳的腔室之任何部分。
在方塊306中，方法300可進一步包括在腔室的第二部分中混合包括氨之第二氣體與電漿流出物以形成第一混合物。第二氣體在與電漿流出物混合物之前可能不經過電漿。腔室的第二部分可能在氣體經歷充分混合的位置處。例如，在第1圖中，腔室的第二部分可包括混合歧管112。腔室的第二部分可包括漸縮孔，並且可包括第8圖中的壓力板4025、入口配接器4030、擴散器4035和混合歧管4040。
在方塊308中，方法300可包括在基板的第三部分中使第一混合物流到腔室。腔室的第三部分可包括在蝕刻基板處的腔室部分。在第1圖中，腔室的第三部分可至少部分由均勻SMD 122及間隔件界定，並且可包括基座126。
在方塊310中，方法300亦可包括使第一混合物與基板反應以相對於矽層選擇性蝕刻氧化矽層。氧化矽層及矽層可係本文描述的任何此種層並且可如本文所描述來選擇性蝕刻。
在方塊312中，方法300可包括形成第二混合物，該第二混合物包含來自第一混合物與基板反應的產物。產物可包括來自蝕刻氧化矽的蝕刻副產物。
在方塊314中，第二混合物可流過腔室的第四部分以離開腔室。腔室的第四部分可至少部分由泵埠或例如第1圖中的泵送襯墊/通道130界定。離開腔室可包括在與系統經配置以接收基板的部分明顯不同的壓力下進入系統的部分。
第二部分、第三部分和第四部分可包括鍍鎳材料。第一混合物可在從第二部分到第四部分的腔室中的路徑中流動。路徑可係連續的並且可由腔室之鍍鎳部件來界定。從第二部分到第四部分的任何表面可鍍有鎳，並且可能不包括缺乏鍍鎳的表面。如關於第1圖描述，從混合歧管112到泵送襯墊/通道130並且包括混合歧管112的任何及所有部件（除了基座126之外）可鍍有鎳。在第8圖中，從壓力板4025到離開腔室並且包括壓力板4025的任何及所有部件可鍍有鎳。 III.實例
量測不具有任何鍍鎳部件的系統的蝕刻量以及具有鍍鎳部件的系統的蝕刻量。具有鍍鎳部件的系統係與第1圖類似之系統，其中隔離器104下游之部件鍍有鎳（包括混合歧管112、氣盒114、均勻阻隔器118、均勻面板120、均勻SMD 122、間隔件124、邊緣環128及泵送襯墊/通道130，以及壓力板、入口配接器、及未在第1圖中圖示的擴散器）。RPS配接器110及隔離器104未鍍有鎳。不具有鍍鎳部件之系統具有替代的陽極化鋁塗層來替代。NH3 、NF3 、氬、H2 、氦及HF之氣體混合物流過遠端電漿源。電漿流出物隨後與氨混合並流動以蝕刻基板。量測熱氧化物及多晶矽的蝕刻量。
第 4A 圖 、第 4B 圖 及第 4C 圖 圖示了利用鎳塗佈腔室及陽極化鋁腔室蝕刻的結果。在第4A圖中，x軸係腔室壓力。左側的y軸圖示以埃計的熱氧化物蝕刻量。此製程期望較高的熱氧化物蝕刻量。菱形圖示鎳塗層的熱氧化物蝕刻量，並且三角形圖示陽極化鋁塗層的熱氧化物蝕刻量。對於從7 Torr至10 Torr的壓力，兩種系統均圖示類似的熱氧化物蝕刻量。
右側的y軸圖示以埃計的矽蝕刻量。方形圖示鎳塗層的矽蝕刻量，並且x軸圖示陽極化鋁塗層的矽蝕刻量。在10 Torr下，鎳塗佈系統及陽極化鋁塗佈系統均圖示接近零的矽蝕刻量。然而，隨著壓力減小，陽極化鋁塗佈系統的矽蝕刻量增加。在6 Torr下，陽極化鋁塗佈導致蝕刻約10埃的矽。相比之下，甚至在4 Torr的最低測試壓力下，鎳塗佈之系統圖示幾乎無矽蝕刻量。
第 4B 圖 圖示來自第4A圖的結果，但僅針對鎳塗佈之系統。該圖在左手y軸上圖示熱氧化物蝕刻量、在右手y軸上圖示矽蝕刻量、以及在x軸上圖示腔室壓力。繪製了熱氧化物蝕刻量，並且隨著壓力減小，熱氧化物蝕刻量減小。未測量到任何腔室壓力的矽蝕刻量。因此，在此實例中，鎳塗佈之系統圖示蝕刻熱氧化物相對於矽的無限選擇性。
第 4C 圖 圖示了來自第4A圖的結果，但僅針對陽極化鋁系統。該圖在左手y軸上圖示熱氧化物蝕刻量、在右手y軸上圖示矽蝕刻量、以及在x軸上圖示腔室壓力。繪製了熱氧化物蝕刻量，並且隨著壓力減小，熱氧化物蝕刻量減小。隨著壓力減小，矽的蝕刻量增加。在7 Torr的壓力下，矽蝕刻量係約10埃，而熱氧化物蝕刻量係約250埃。在7 Torr下的選擇性略微大於25。結果指示隨著腔室壓力減小，矽蝕刻量將繼續增加，並且熱氧化物蝕刻量將繼續減小。因此，在小於7 Torr的壓力下，吾人將期望選擇性低於25。 Ⅳ.示例性處理系統
可實現本發明之實施例的處理腔室可包括在處理平台內，諸如Producer® SelectraTM蝕刻系統，獲自加州圣克拉拉市的應用材料公司。
第 5 圖 圖示了根據所揭示實施例的沉積、蝕刻、烘焙及固化腔室的處理工具1000的一個實施例的頂部平面圖。在該圖中，一對前開式晶圓傳送盒(front opening unified pod; FOUP) 1002供應各種大小的基板，該等基板由機器臂1004接收並在放置到位於串聯部分1009a-c中的基板處理腔室1008a-f之一中之前放置到低壓保持區域1006內。第二機器臂1010可用於將基板晶圓從保持區域1006運輸到基板處理腔室1008a-f並返回。可配備每個基板處理腔室1008a-f來執行數個基板處理操作，除了循環層沉積(cyclical layer deposition; CLD)、原子層沉積(atomic layer deposition; ALD)、化學氣相沉積(chemical vapor deposition; CVD)、物理氣相沉積(physical vapor deposition; PVD)、蝕刻、預清潔、除氣、定向及其他基板製程之外，該等基板處理操作包括本文描述的乾式蝕刻製程。
基板處理腔室1008a-f可包括一或多個系統部件，該等部件用於在基板晶圓上沉積、退火、固化及/或蝕刻膜。在一種配置中，兩對處理腔室（例如，1008c-d及1008e-f）可用於在基板上沉積材料，並且第三對處理腔室（例如，1008a-b）可用於蝕刻所沉積的膜。在另一種配置中，所有三對腔室（例如，1008a-f）可經配置以在基板上蝕刻膜。所描述的製程的任何一或多種可在與不同實施例中圖示的製造系統分離的腔室中執行。膜可為介電、保護性或其他材料。將瞭解到，處理工具1000預想到用於膜的沉積、蝕刻、退火及固化腔室的額外配置。
第 6A 圖 圖示了在處理腔室內具有劃分之電漿產生區域的示例性處理腔室部分2000的橫截面圖。在膜蝕刻期間，例如，矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽、含碳材料等等，處理氣體可穿過進氣口組件2005流至第一電漿區域2015中。遠端電漿系統(remote plasma system; RPS)單元2001可包括在該系統中，並且可處理氣體，該氣體隨後可行進穿過進氣口組件2005。入口組件2005可包括兩個或更多個相異的氣體供應通道，其中第二通道（未圖示）可繞過RPS單元2001。由此，在所揭示之實施例中，可將前驅物氣體遞送至處於未激發狀態的處理腔室。在另一實例中，在所揭示之實施例中，穿過RPS提供的第一通道可用於處理氣體(process gas)，並且繞過RPS的第二通道可用於處理氣體(treatment gas)。處理氣體可在進入第一電漿區域2015之前在RPS單元2001內激發。由此，在所揭示之實施例中，例如，含氟前驅物可經過RPS 2001或繞過RPS單元。將類似地理解此佈置涵蓋的各種其他實例。
圖示了冷卻板2003、面板2017、離子抑制件2023、噴淋頭2025及基座2065（其上設置有基板2055）並且上述各者可根據所揭示之實施例包括在內。基座2065可具有熱交換通道，熱交換流體流過該熱交換通道以控制基板溫度。此配置可允許冷卻或加熱基板2055溫度以維持相對低溫度，諸如在約-20℃至約200℃之間，或其間。熱交換流體可包含乙二醇及/或水。基座2065的晶圓支撐盤（其可包含鋁、陶瓷或其組合）亦可使用嵌入式電阻加熱器元件來電阻式加熱以達到相對高溫度，諸如從最高或約100℃至高於或約1100℃。加熱元件可在基座內形成為一或多個迴路，並且加熱器元件的外部可鄰近支撐盤的周邊延伸，而內部在具有較小半徑之同心圓路徑上延伸。到加熱器元件的接線可經過基座2065的軸桿，該軸桿可經進一步配置以旋轉。
面板2017可係角錐、圓錐、或另一類似結構，其中窄頂部延伸至寬底部。如圖所示，面板2017可另外為平坦的，並且包括用於分配處理氣體的複數個通道。取決於使用RPS 2001，電漿產生氣體及/或電漿激發物質可經過面板2017中的複數個孔洞，用於更均勻遞送至第一電漿區域2015中。
示例性配置可包括具有通向由面板2017從第一電漿區域2015劃分的氣體供應區域2058的進氣口組件2005，使得氣體/物質穿過面板2017中的孔洞流至第一電漿區域2015中。可選擇結構及操作特徵來防止電漿從第一電漿區域2015顯著回流返回到供應區域2058、進氣口組件2005及流體供應系統（未圖示）中。結構特徵可包括選擇面板2017中的孔的尺寸及截面幾何形狀以去活化回流電漿。操作特徵可包括維持氣體供應區域2058與第一電漿區域2015之間的壓力差，該壓力差維持電漿穿過噴淋頭2025的單向流動。面板2017或腔室的導電頂部、以及噴淋頭2025經圖示為具有位於特徵之間的絕緣環2020，這允許相對於噴淋頭2025及/或離子抑制件2023將AC電勢施加到面板2017。絕緣環2020可定位在面板2017與噴淋頭2025及/或離子抑制件2023之間，從而使得在第一電漿區域中形成電容耦合之電漿(capacitively coupled plasma; CCP)。擋板（未圖示）可另外位於第一電漿區域2015中、或以其他方式與進氣口組件2005耦合，以影響流體穿過進氣口組件2005到區域中的流動。
離子抑制件2023可包含板或在整個結構中界定複數個孔的其他幾何形狀，該結構經配置以抑制帶電物質（例如，離子）遷移出電漿激發區域2015，同時允許不帶電之中性或自由基物質經過離子抑制件2023到抑制器與噴淋頭之間的活化氣體遞送區域中。在所揭示之實施例中，離子抑制件2023可包含具有各種孔配置的穿孔板。此等不帶電物質可包括利用較少反應性載送氣體運輸穿過孔的高反應性物質。如上文提及，離子物質穿過孔洞的遷移可減少，並且在一些情況中被完全抑制。控制經過離子抑制件2023之離子物質的量可提供對與下層晶圓基板接觸的氣體混合物的增加之控制，這繼而可增加對氣體混合物之沉積及/或蝕刻特性的控制。例如，調節氣體混合物之離子濃度可以顯著改變其蝕刻選擇性。在執行沉積的替代實施例中，其亦可以偏移介電材料、含碳材料及其他材料的保形對可流動類型沉積的平衡。
離子抑制件2023中的複數個孔洞可經配置以控制活化氣體（亦即，離子、自由基及/或中性物質）穿過離子抑制件2023的通過。例如，可控制孔洞的深寬比或孔洞直徑與長度比及/或孔洞的幾何形狀，使得減少經過離子抑制件2023之活化氣體中的帶離子電荷之物質的流動。離子抑制件2023中的孔洞可包括面向電漿激發區域2015的漸縮部分，以及面向噴淋頭2025的圓柱部分。可調整圓柱部分的形狀及尺寸來控制經過噴淋頭2025的離子物質的流動。可調節之電偏壓亦可施加至離子抑制件2023，作為控制穿過抑制器的離子物質之流動的額外手段。
離子抑制元件2023可用於減少或消除從電漿產生區域行進到基板的帶離子電荷之物質的量。不帶電的中性及自由基物質仍可經過離子抑制件中的開口來與基板反應。應當注意，在圍繞基板之反應區域中完全消除帶離子電荷的物質並非總是期望的目的。在眾多情況中，需要離子物質到達基板以執行蝕刻及/或沉積製程。在該等情況中，離子抑制件可幫助將反應區域中的離子物質濃度控制在輔助製程的水平。
與離子抑制件2023結合的噴淋頭2025可允許在腔室電漿區域2015中存在電漿以避免在基板處理區域2033中直接激發氣體，同時仍允許激發之物質從腔室電漿區域2015行進至基板處理區域2033中。以此方式，腔室可經配置以防止電漿接觸正在蝕刻的基板2055。這可有利地保護各種複雜結構及在基板上圖案化之膜，若由所產生電漿直接接觸，該等複雜結構及膜可被破壞、錯位、或以其他方式扭曲。此外，當允許電漿接觸由溝槽暴露的下層材料，諸如蝕刻終止，下層材料蝕刻的速率可增加。
處理系統可進一步包括電源供應器2040，電源供應器2040與處理腔室電氣耦合以向面板2017、離子抑制件2023、噴淋頭2025及/或基座2065提供電力以在第一電漿區域2015或處理區域2033中產生電漿。電源供應器可經配置以取決於所執行的製程將可調節電量遞送至腔室。此配置可允許在正執行的製程中使用可調諧電漿。與經常存在有開或關功能的遠端電漿單元不同，可調諧電漿可經配置以將特定電量遞送至電漿區域2015。這繼而可允許發展特定電漿特性，使得前驅物可以特定方式解離來增強由此等前驅物產生的蝕刻輪廓。
電漿可在噴淋頭2025之上的腔室電漿區域2015中或在噴淋頭2025之下的基板處理區域2033中點燃。電漿可在腔室電漿區域2015中存在以由含氟前驅物的流入產生氟自由基前驅物。通常在射頻(radio frequency; RF)範圍中的AC電壓可在處理腔室的導電頂部（諸如面板2017）與噴淋頭2025及/或離子抑制件2023之間施加以在沉積期間點燃腔室電漿區域2015中的電漿。RF電源供應器可產生13.56 MHz的高RF頻率，但亦可單獨或與13.56 MHz頻率結合地產生其他頻率。
電漿功率可以具有各種頻率或多個頻率的組合。在示例性處理系統中，電漿可相對於離子抑制件2023及/或噴淋頭2025由遞送至面板2017之RF功率提供。在不同實施例中，RF功率可在約10瓦與約2000瓦之間、約100瓦與約2000瓦之間、約200瓦與約1500瓦之間、或約200瓦與約1000瓦之間。在不同實施例中，在示例性處理系統中施加的RF功率可係小於約200 kHz的低RF功率、在約10 MHz與約15 MHz之間的高RF功率、或大於或約1 GHz的微波頻率。電漿功率可電容耦合(capacitively-coupled; CCP)或電感耦合(inductively-coupled; ICP)至遠端電漿區域中。
當打開基板處理區域2033中的底部電漿以例如固化膜或清潔與基板處理區域2033相鄰之內表面時，頂部電漿區域2015可保持低功率或無功率。基板處理區域2033中的電漿可藉由在噴淋頭2025與基座2065或腔室底部之間施加AC電壓來點燃。可在存在電漿時將清潔氣體引入基板處理區域2033中。
藉由本文描述的噴淋頭之實施例，流體（諸如前驅物，例如含氟前驅物）可流到處理區域2033中。在電漿區域2015中從處理氣體得到的激發物質可行進穿過離子抑制件2023中的孔及/或噴淋頭2025，並且與從噴淋頭的獨立部分流到處理區域2033中的額外前驅物反應。或者，若所有前驅物物質正在電漿區域2015中激發，則無額外前驅物可流過噴淋頭的獨立部分。極少或沒有電漿可存在於處理區域2033中。前驅物的激發之衍生物可在基板之上的區域中結合，並且在所揭示的應用中有時在基板上結合以蝕刻結構或移除基板上的物質。
直接激發第一電漿區域2015中的流體或激發RPS單元2001中的流體可提供若干益處。歸因於第一電漿區域2015中的電漿，從流體得到的激發物質的濃度可在處理區域2033內增加。此增加可獲自第一電漿區域2015中的電漿位置。與遠端電漿系統(remote plasma system; RPS) 2011相比，處理區域2033可位於更靠近第一電漿區域2015處，從而為激發物質餘留較少時間，以經由與其他氣體分子、腔室壁及噴淋頭表面的碰撞而保持在激發狀態。
從處理氣體得到的激發物質的濃度均勻性亦可在處理區域2033內增加。這可獲自第一電漿區域2015的形狀，該形狀可更類似處理區域2033的形狀。相對於經過噴淋頭2025之中心附近的孔的物質，在RPS單元2001中產生的激發物質可行進更大距離，以經過噴淋頭2025之邊緣附近的孔。較大距離可導致激發物質的減少激發，例如，可導致基板邊緣附近的較慢生長速率。對於流過RPS 2001的流體，在第一電漿區域2015中激發流體可減輕此變化。
處理氣體可在RPS單元2001中激發，並且可以激發狀態經過噴淋頭2025到處理區域2033。或者，可將電力施加至第一處理區域以激發電漿氣體或增強已經從RPS激發的處理氣體。儘管電漿可在處理區域2033中產生，電漿可替代地不在處理區域中產生。在一個實例中，僅激發處理氣體或前驅物可來自激發RPS單元2001中的處理氣體以在處理區域2033中與基板2055反應。
除了流體前驅物之外，可存在在不同時間出於不同目的引入的其他氣體，包括輔助遞送的載送氣體。可引入處理氣體以從腔室壁、基板、所沉積膜及/或沉積期間的膜移除不期望的物質。處理氣體可在電漿中激發並隨後用於減少或移除腔室內部的殘餘內含物。在其他揭示之實施例中，可在沒有電漿的情況下使用處理氣體。當處理氣體包括水蒸氣時，遞送可使用質量流量計(mass flow meter; MFM)、質量流量控制器(mass flow controller; MFC)、噴射閥或藉由市售之水蒸氣產生器來實現。可穿過RPS單元或繞過RPS單元將處理氣體引到處理區域2033，並且處理氣體可在第一電漿區域中進一步激發。
第 6B 圖 圖示了影響穿過面板2017的處理氣體分配的特徵的細節圖。如第6A圖及第6B圖所示，面板2017、冷卻板2003及進氣口組件2005交叉以界定氣體供應區域2058，可將處理氣體從進氣口2005遞送至氣體供應區域2058中。氣體可填充氣體供應區域2058並且穿過面板2017中的孔2059流到第一電漿區域2015。孔2059可經配置以實質上單向方式引導流動，使得處理氣體可流到處理區域2033中，但在橫穿面板2017之後可部分或完全防止處理氣體回流到氣體供應區域2058中。
用於處理腔室部分2000中的氣體分配組件（諸如噴淋頭2025）可被稱為雙通道噴淋頭(dual channel showerhead; DCSH)並且在本文的第6A圖以及第7圖中描述的實施例中另外詳述。雙通道噴淋頭可提供蝕刻製程，該等蝕刻製程允許分離處理區域2033外部的蝕刻劑來在遞送至處理區域中之前提供與腔室部件及彼此的受限相互作用。
噴淋頭2025可包含上板2014及下板2016。板可彼此耦合以界定板之間的容積2018。板的耦合可係用以提供穿過上板及下板的第一流體通道2019及穿過下板2016的第二流體通道2021。所形成之通道可經配置以提供從容積2018穿過下板2016單獨經由第二流體通道2021的流體通路，並且第一流體通道2019可與在板與第二流體通道2021之間的容積2018流體隔離。可穿過氣體分配組件2025的一側流體進入容積2018。儘管第6A圖的示例性系統包括雙通道噴淋頭，將理解可利用替代分配組件來在處理區域2033之前維持第一與第二前驅物流體隔離。例如，可利用多孔板及該板下面的管，儘管其他配置可以降低效率操作，或不提供如所描述的雙通道噴淋頭那般的均勻處理。
在所示的實施例中，噴淋頭2025可經由第一流體通道2019分配處理氣體，該等處理氣體在由腔室電漿區域2015中或來自RPS單元2001的電漿激發時含有電漿流出物。在實施例中，引入RPS單元2001及/或腔室電漿區域2015中的處理氣體可含有氟（例如，CF4 、NF3 或XeF2 ）、氧（例如，N2 O）或含氫前驅物（例如，H2 或NH3 ）。一種或兩種處理氣體亦可包括載送氣體，諸如氦、氬、氮(N2 )等等。電漿流出物可包括處理氣體的離子化或中性衍生物，並且本文亦可被稱為氟自由基前驅物，指所引入的處理氣體的原子構成。在實例中，含氟氣體（諸如NF3 ）可在RPS單元2001中激發並經過區域2015及2033，而在彼等區域中不額外產生電漿。來自RPS單元2001的電漿流出物可經過噴淋頭2025並隨後與基板2055反應。在經過噴淋頭2025之後，電漿流出物可包括自由基物質，並且可基本上不含離子物質或UV光。此等電漿流出物可與基板2055上的膜（例如，氮化鈦及其他遮罩材料）反應。
用於處理腔室部分2000中的氣體分配組件2025被稱為雙通道噴淋頭(dual channel showerhead; DCSH)並且在本文的第7圖中描述的實施例中詳述。雙通道噴淋頭可允許材料的可流動沉積，以及在操作期間前驅物及處理流體的分離。噴淋頭可替代地用於蝕刻製程，該等蝕刻製程允許分離反應區外部的蝕刻劑以在遞送至處理區域中之前提供與腔室部件及彼此的受限相互作用。
第 7 圖 係根據所揭示之實施例的與處理腔室一起使用的噴淋頭3025的仰視圖。噴淋頭3025可與第6A圖所示的噴淋頭對應。通孔3065（其圖示第一流體通道2019的視圖）可具有複數個形狀及配置，以控制並影響前驅物穿過噴淋頭3025的流動。小孔洞3075（其圖示第二流體通道2021的視圖）可實質上均勻地在噴淋頭的表面上方（甚至在通孔3065之中）分配，與其他配置相比，這可幫助在前驅物離開噴淋頭時提供該等前驅物的更均勻混合。
第 8 圖 圖示了根據本技術之實施例的示例性處理系統4000的示意性橫截面圖。系統4000可係第1圖中的系統100的變化。系統4000亦可包括第6A圖中示出之腔室的變化，並且可包括在彼圖中示出的一些或所有部件。系統4000可包括處理腔室4005及遠端電漿單元4010。遠端電漿單元4010可利用一或多個部件與處理腔室4005耦合。遠端電漿單元4010可與遠端電漿單元配接器4015、隔離器4020、壓力板4025、入口配接器4030、擴散器4035或混合歧管4040中的一或多個耦合。混合歧管4040可與處理腔室4005的頂部耦合，並且可與到處理腔室4005的入口耦合。
遠端電漿單元配接器4015可在第一端4011處與遠端電漿單元4010耦合，並且可在與第一端4011相對的第二端4012處與隔離器4020耦合。可穿過單元電漿單元配接器4015界定一或多個通道。在第一端4010處可界定到通道4013的開口或埠。通道4013可在遠端電漿單元配接器4015內的中心處界定，並且可由在與穿過遠端電漿單元配接器4015之中心軸線正交的方向上（其可在從遠端電漿單元4010流動的方向上）的第一橫截面積表徵。通道4013的直徑可等於從遠端電漿單元4010的出口埠或與該出口埠相同。通道4013可由從第一端4011到第二端4012的長度表徵。通道4013可延伸穿過遠端電漿單元配接器4015的整個長度，或小於從第一端4011到第二端4012之長度的長度。例如，通道4013可延伸小於從第一端4011到第二端4012的長度的一半，通道4013可延伸從第一端4011到第二端4012的長度的一半，通道4013可延伸大於從第一端4011到第二端4012的長度的一半，或通道4013可延伸從遠端電漿單元配接器4015的第一端4011到第二端4012的長度的約一半。
遠端電漿單元配接器4015亦可界定在遠端電漿單元配接器4015下面界定的一或多個溝槽4014。溝槽4014可係或包括在遠端電漿單元配接器4015內界定的一或多個環形凹陷，以允許放置O形環或彈性元件，這可允許與隔離器4020耦合。
在實施例中，隔離器4020可與遠端電漿單元配接器4015的第二端4012耦合。隔離器4020可係或包括繞著隔離器通道4021的環形構件。隔離器通道4021可與中心軸在穿過遠端電漿單元配接器4015流動的方向上軸向對準。隔離器通道4021可由在與穿過隔離器4020的流動方向正交的方向上的第二橫截面積表徵。第二橫截面積可等於、大於或小於通道4013的第一橫截面積。在實施例中，隔離器通道4021可由一直徑表徵，該直徑大於、等於或約與通道4012穿過遠端電漿單元配接器4015的直徑相同。
隔離器4020可由與遠端電漿單元配接器4015、混合歧管4040或任何其他腔室部件類似或不同的材料製成。在一些實施例中，儘管遠端電漿單元配接器4015及混合歧管4040可由鋁製成或包括鋁，包括鋁氧化物、在一或多個表面上處理的鋁、或一些其他材料，但隔離器4020可係或包括與其他腔室部件相比較低導熱性的材料。在一些實施例中，隔離器4020可係或包括陶瓷、塑膠、或其他熱絕緣部件，該部件經配置以在遠端電漿單元4010與腔室4005之間提供熱障。在操作期間，遠端電漿單元4010可經冷卻或相對於腔室4005在較低溫度下操作，而腔室4005可經加熱或相對於遠端電漿單元4010在較高溫度下操作。提供陶瓷或熱絕緣隔離器4020可防止或限制部件之間的熱、電氣或其他干擾。
壓力板4025可與隔離器4020耦合。在實施例中，壓力板4025可係或包括鋁或另一材料，並且壓力板4025可由一種材料製成或包括該種材料，在實施例中，該種材料與遠端電漿單元配接器4015或混合歧管4040類似或不同。壓力板4025可界定穿過壓力板4025的中心孔4023。中心孔4023可由穿過壓力板4025從靠近隔離器通道4021的一部分到壓力板4025的相對側面的漸縮形狀表徵。中心孔4023靠近隔離器通道4021的一部分可由與流動方向正交的橫截面積表徵，該橫截面積等於或類似於隔離器通道4021的橫截面積。中心孔4023可由跨越壓力板4025的長度大於或約10%的漸縮百分比表徵，並且在實施例中，可由大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%或更大的漸縮百分比表徵。壓力板4025亦可界定在隔離器4020下面界定的一或多個溝槽4024。溝槽4024可係或包括在壓力板4025內界定一或多個環形凹陷，以允許放置O形環或彈性元件，這可允許與隔離器4020耦合。
入口配接器4030可在第一端4026處與壓力板4025耦合，並且在與第一端4026相對的第二端4027處與擴散器4035耦合。入口配接器4030可界定穿過入口配接器4030界定的中心通道4028。中心通道4028可由第一部分4029a及第二部分4029b表徵。第一部分4029a可穿過入口配接器4030從第一端4026延伸至第一長度，其中中心通道4028可過渡至第二部分4029b，其可延伸至第二端4027。第一部分4029a可由第一橫截面積或直徑表徵，並且第二部分4029b可由小於第一部分的第二橫截面積或直徑表徵。在實施例中，第一部分4029a的橫截面積或直徑可係第二部分4029b的橫截面積或直徑的兩倍大，並且在實施例中可多達或大於約三倍大、大於或約4倍大、大於或約5倍大、大於或約6倍大、大於或約7倍大、大於或約8倍大、大於或約9倍大、大於或約10倍大或更大。在實施例中，中心通道4028可經配置以提供從遠端電漿單元4010遞送的前驅物的電漿流出物，其可經過遠端電漿單元配接器4015的通道4013、隔離器4020的隔離器通道4021、及壓力板4025的中心孔4023。
入口配接器4030亦可界定一或多個第二通道4031，其可從第一部分4029a下方延伸到第二端4027或延伸穿過第二端4027。第二通道4031可由與穿過入口配接器4030的中心軸正交的方向上的第二橫截面積表徵。在實施例中，第二橫截面積可小於第一部分4029a的第一橫截面積，並且可大於第二部分4029b的橫截面積或直徑。第二通道4031可延伸至在第二端4027處從入口配接器4030的出口(exit)，並且可為從遠端電漿單元4010交替遞送的前驅物（諸如第一旁路前驅物）提供從配接器4030的出口(egress)。例如，第二通道4031可從沿著入口配接器4030的外表面（諸如側面）界定的第一埠4032流體進入，該第二通道可繞過遠端電漿單元4010。第一埠4032可沿著入口配接器4030的長度在第一部分4029a處或下方，並且可經配置以提供到第二通道4031的流體通路。
第二通道4031可將前驅物遞送穿過入口配接器4030並遞送出第二端4027。第二通道4031可在第一部分4029a與第二端4027之間的入口配接器4030的區域中界定。在實施例中，第二通道4031可能無法從中心通道4028進入。第二通道4031可經配置以維持前驅物與從遠端電漿單元4010被遞送至中心通道4028中的電漿流出物流體隔離。第一旁路前驅物可能不接觸電漿流出物，直至穿過第二端4027離開入口配接器4030。第二通道4031可包括在配接器4030中界定的一或多個通道。第二通道4031可位於配接器4030內的中心處，並且可與中心通道4028相關聯。例如，在實施例中，第二通道4031可與中心通道4028同心對準並繞著中心通道4028界定。在實施例中，第二通道4031可係部分穿過入口配接器4030的長度或垂直橫截面延伸的環形或圓柱通道。在一些實施例中，第二通道4031亦可係繞著中心通道4028徑向延伸的複數個通道。
入口配接器4030亦可界定一或多個第三通道4033，其可在第一部分4029a下方延伸到第二端4027或延伸穿過第二端4027，並且可從等分第一埠4032的平面下方延伸。第三通道4033可由在穿過入口配接器4030與中心軸正交的方向上的第三橫截面積表徵。在實施例中，第三橫截面積可小於第一部分4029a的橫截面積，並且可大於第二部分4029b的橫截面積或直徑。第三橫截面積亦可等於或類似於如示出的第一部分4029a的橫截面積或直徑。例如，第三通道4033的外直徑可等同於第一部分4029a的外直徑，或可小於第一部分4029a的外直徑。第三通道4033可在第二端4027處延伸到從入口配接器4030的出口，並且可為從遠端電漿單元4010交替遞送的前驅物（諸如第二旁路前驅物）提供從配接器4030的出口(egress)。例如，第三通道4033可從沿著入口配接器4030的外表面（諸如側面）界定的第二埠4034流體進入，該第三通道其可繞過遠端電漿單元4010。第二埠4034可位於入口配接器4030與第一埠4032相對的側面或部分上。第二埠4034可沿著入口配接器4030的長度在第一部分4029a處或下方，並且可經配置以提供到第三通道4033的流體通路。在實施例中，第二埠4034亦可沿著入口配接器4030的長度在第一埠4032處或下方。
第三通道4033可將第二旁路前驅物遞送穿過入口配接器4030並遞送出第二端4027。第三通道4033可在第一部分4029a與第二端4027之間的入口配接器4030的區域中界定。在實施例中，第三通道4033可能無法從中心通道4028進入。第三通道4033可經配置以維持第二旁路前驅物與從遠端電漿單元4010被遞送至中心通道4028中的電漿流出物流體隔離，或與穿過第一埠4032被遞送至第二通道4031中的第一旁路前驅物流體隔離。第二旁路前驅物可能不接觸電漿流出物或第一旁路前驅物，直至穿過第二端4027離開入口配接器4030。第三通道4033可包括在配接器4030中界定的一或多個通道。第三通道4033可位於配接器4030內的中心處，並且可與中心通道4028及第二通道4031相關聯。例如，在實施例中，第三通道4033可繞著中心通道4028同心對準並界定，並且可繞著第二通道4031同心對準並界定。在實施例中，第三通道4033可係部分延伸穿過入口配接器4030的長度或垂直截面的第二環形或圓柱通道。在一些實施例中，第三通道4033亦可係繞著中心通道4028徑向延伸的複數個通道。
擴散器4035可定位在入口配接器4030與混合歧管4040之間以維持流體隔離穿過入口配接器4030遞送的前驅物，直至進入混合歧管4040。擴散器4035可由一或多個通道（諸如穿過擴散器4035界定的圓柱或環形通道）表徵。在實施例中，擴散器4035可界定第一通道4036或中心通道、第二通道4037及第三通道4038。該等通道可由與中心通道4028的第二部分4029b、第二通道4031、及入口配接器4030之第三通道4033類似的尺寸或直徑表徵。例如，每個通道可將入口配接器通道延伸到混合歧管4040。第二通道4037及第三通道4038各者可係繞著第一通道4036界定的環形通道，並且第一通道4036、第二通道4037及第三通道4038可在實施例中同心對準並穿過擴散器4035界定。
擴散器4035可另外繞著擴散器4035界定一或多個溝槽4039。例如，在實施例中，擴散器4035可界定第一溝槽4039a、第二溝槽4039b及第三溝槽4039c，這可允許在入口配接器4030與擴散器4035之間放置O形環或彈性構件。在實施例中，每個溝槽4039可係在穿過擴散器4035界定的一或多個通道外部徑向放置的環形溝槽。第一溝槽4039a可位於從第一通道4036徑向向外，並且可位於第一通道4036與第二通道4037之間。第二溝槽4039b可位於從第二通道4037徑向向外，並且可位於第二通道4037與第三通道4038之間。第三溝槽4039c可位於從第三通道4038徑向向外。每個溝槽4039的直徑可大於其相關聯的通道及其可在外部徑向定位的通道。溝槽可實現在入口配接器4030與擴散器4035之間的改良密封以確保前驅物在部件之間維持流體隔離，並且不發生通道之間的洩漏。
混合歧管4040可在第一端4041處與擴散器4035耦合，並且可在第二端4042處與腔室4005耦合。混合歧管4040可在第一端4041處界定入口4043。入口4043可提供從擴散器4035的流體通路，並且入口4043可由等於或大於與第三通道4038穿過擴散器4035的直徑相同的直徑表徵。入口4043可界定穿過混合歧管4040的通道4044的一部分，並且通道4044可由界定通道4044的輪廓的一或多個部分構成。入口4043可係在穿過混合歧管4040的通道4044的流動方向上的第一部分。入口4043可由一長度表徵，該長度可小於在混合歧管4040的流動方向上的長度的一半。入口4043的長度亦可小於混合歧管4040的長度的三分之一，並且在實施例中可小於混合歧管4040的長度的四分之一。入口4043可從擴散器4035接收每種前驅物，並且可允許混合前驅物，這可維持流體隔離，直至遞送至混合歧管4040。
入口4043可延伸到通道4044的第二部分，該第二部分可係或包括漸縮部分4045。漸縮部分4045可從第一直徑延伸到小於第一直徑的第二直徑，該第一直徑等於或類似於入口4043的直徑。在一些實施例中，第二直徑可約或小於第一直徑的一半。在實施例中，漸縮部分4045可由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%或更大的漸縮百分比表徵。
漸縮部分4045可過渡至通道4044的第三區域，該第三區域可係擴口部分4046。擴口部分4046可從漸縮部分4045延伸到第二端4042處的混合歧管4040的出口。擴口部分4046可從第一直徑延伸到大於第一直徑的第二直徑，該第一直徑等於漸縮部分4045的第二直徑。在一些實施例中，第二直徑可約或大於第一直徑的兩倍。在實施例中，擴口部分4046可由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%或更大的擴口百分比表徵。
擴口部分4046可為穿過混合歧管4040遞送的前驅物提供穿過第二端4042經由出口4047的出口(egress)。通道4044穿過混合歧管4040的部分可經配置以在將混合之前驅物提供至腔室4005中之前提供遞送至混合歧管的前驅物的適當或徹底混合。與習知技術不同，藉由在遞送至腔室之前執行蝕刻劑或前驅物混合，本系統可提供在繞著腔室及基板分配之前具有均勻性質的蝕刻劑。以此方式，利用本技術執行的製程可具有跨越基板表面的更均勻結果。
處理腔室4005可包括以堆疊佈置的數個部件。腔室堆疊可包括氣盒4050、阻隔板4060、面板4070、離子抑制元件4080及蓋間隔件4090。該等部件可用於穿過腔室分配前驅物或一組前驅物，以向用於處理的基板提供蝕刻劑或其他前驅物的均勻遞送。在實施例中，此等部件可係堆疊板，每個板至少部分界定腔室4005的外部。
氣盒4050可界定腔室入口4052。中心通道4054可穿過氣盒4050界定以將前驅物遞送至腔室4005中。入口4052可與混合歧管4040的出口4047對準。在實施例中，入口4052及/或中心通道4054可由類似直徑表徵。中心通道4054可延伸穿過氣盒4050並且經配置以將一或多種前驅物遞送至由氣盒4050從上方界定的容積4057中。氣盒4050可包括第一表面4053（諸如頂表面）及與第一表面4053相對的第二表面4055，諸如氣盒4050的底表面。在實施例中，頂表面4053可係平坦或實質上平坦的表面。加熱器4048可與頂表面4053耦合。
在實施例中，加熱器4048可經配置以加熱腔室4005，並且可傳導性加熱每個蓋堆疊部件。加熱器4048可係任何種類的加熱器，包括流體加熱器、電氣加熱器、微波加熱器或經配置以將熱傳導性遞送至腔室4005的其他元件。在一些實施例中，加熱器4048可係或包括以繞著氣盒4050的第一表面4053的環形圖案形成的電氣加熱器。加熱器可跨過氣盒4050並圍繞混合歧管4040界定。加熱器可係板加熱器或電阻式元件加熱器，該加熱器可經配置以提供多達、約或大於約2,000 W熱量，並且可經配置以提供大於或約2,500 W、大於或約3,000 W、大於或約3,500 W、大於或約4,000 W、大於或約4,500 W、大於或約5,000 W或更多。
加熱器4048可經配置以產生多達、約或大於約50℃的可變腔室部件溫度，並且在實施例中可經配置以產生大於或約75℃、大於或約100℃、大於或約150℃、大於或約200℃、大於或約250℃、大於或約300℃、或更高的腔室部件溫度。加熱器4048可經配置以將獨立部件（諸如離子抑制元件4080）升高至任何此等溫度，以促進處理操作，諸如退火。在一些處理操作中，基板可朝向離子抑制元件4080升高以用於退火操作，並且加熱器4048可經調節以將加熱器的溫度傳導性升高至上文提及的任何特定溫度，或在任何所述的溫度內或之間的任何溫度範圍內。
氣盒4050的第二表面4055可與阻隔板4060耦合。阻隔板4060可由一直徑表徵，該直徑等於或類似於氣盒4050的直徑。阻隔板4060可界定穿過阻隔板4060的複數個孔4063，僅示出該等孔的樣品，這可允許從容積4057分配前驅物（諸如蝕刻劑），並且可開始穿過腔室4005分配前驅物，用於均勻遞送至基板。儘管僅示出數個孔4063，應理解阻隔板4060可具有穿過該結構界定的任何數量的孔4063。阻隔板4060可由在阻隔板4060的外徑處升高之環形部分4065以及在阻隔板4060的外徑處降低之環形部分4066表徵。升高之環形部分4065可為阻隔板4060提供結構剛性，並且在實施例中可界定容積4057的側面或外徑。阻隔板4060亦可從下方界定容積4057的底部。容積4057可允許在經過阻隔板4060的孔4063之前從氣盒4050的中心通道4054分配前驅物。降低之環形部分4066亦可為阻隔板4060提供結構剛性，並且在實施例中可界定第二容積4058的側面或外徑。阻隔板4060亦可從上方界定容積4058之頂部，而容積4058之底部可由面板4070從下方界定。
面板4070可包括第一表面4072及與第一表面4072相對的第二表面4074。面板4070可在第一表面4072處與阻隔板4060耦合，這可接合阻隔板4060的降低之環形部分4066。面板4070可在第二表面4074的內部處界定延伸至第三容積4075的凸緣4073，第三容積4075至少部分在面板4070內界定或由面板4070界定。例如，面板4070可界定第三容積4075的側面或外徑以及從上方界定容積4075的頂部，而離子抑制元件4080可從下方界定第三容積4075。儘管未在第8圖中示出，面板4070可界定穿過該面板的複數個通道，諸如先前關於腔室2000所描述。
離子抑制元件4080可靠近面板4070的第二表面4074定位，並且可在第二表面4074處與面板4070耦合。離子抑制元件4080可類似於上文描述的離子抑制件2023，並且可經配置以減少離子遷移至容納基板的腔室4005的處理區域中。儘管未在第8圖中示出，離子抑制元件4080可界定穿過如第6A圖中示出的結構的複數個孔。在實施例中，氣盒4050、阻隔板4060、面板4070及離子抑制元件4080可耦合在一起，並且在實施例中可直接耦合在一起。藉由直接耦合部件，由加熱器4048產生的熱可穿過部件傳導以維持特定腔室溫度，可利用部件之間的較少變化維持該特定腔室溫度。離子抑制元件4080亦可接觸蓋間隔件4090，離子抑制元件4080及蓋間隔件4090可一起至少部分界定在處理期間維持基板的電漿處理區域。
轉到第 9 圖 ，示出了根據本技術之實施例的入口配接器500的底部部分平面圖。在實施例中，入口配接器5000可類似於入口配接器4030。如所示出，入口配接器可包括繞著入口配接器5000的中心軸同心對準的三個通道。應理解，在其他實施例中，入口配接器5000可包括與所示出者相比更多或更少的通道。入口配接器5000可包括中心通道5005，中心通道5005可從如先前論述的遠端電漿單元流體進入。中心通道5005可完全穿過入口配接器5000延伸。第二通道5010可繞著中心通道5005延伸，並且可為額外或與穿過中心通道5005的前驅物之電漿流出物交替地遞送的第一旁路前驅物提供流體通路。第二通道5010可從沿著入口配接器5000的外部界定的第一埠5012進入。第二通道5010可與中心通道5005同心對準，並且可維持第一旁路前驅物與電漿流出物或穿過中心通道5005流動的不同前驅物流體隔離。
第三通道5015可繞著中心通道5005及第二通道5010延伸，並且可為另外或與穿過中心通道5005的前驅物之電漿流出物及穿過第二通道5010的第一旁路前驅物交替地遞送的第二旁路前驅物提供流體通路。第三通道5015可從沿著入口配接器5000外部界定的第二埠5017進入，第二埠5017可位於入口配接器5000與第一埠5012相對的側面上。第二埠5017以及第三通道5015可位於穿過第一埠5012的水平面下方。第三通道5015可與中心通道5005同心對準，並且可維持第二旁路前驅物與電漿流出物或穿過中心通道5005流動的不同前驅物以及穿過第二通道5010遞送的第一旁路前驅物流體隔離。
在實施例中，第二通道5010及第三通道5015可係至少部分穿過入口配接器5000的長度界定的環形通道。通道亦可係繞著中心通道5005徑向界定的複數個通道。藉由為前驅物提供三個獨立路徑，可利用不同容積及/或流速的前驅物，從而提供對前驅物遞送及蝕刻劑產生的較高控制。可為每種前驅物遞送一或多種載送氣體，並且可在遞送至與入口配接器5000流體耦合的處理腔室中之前精細調節所顯影的蝕刻劑。
本發明的示例實施例的以上描述已經出於說明及描述的目的而呈現。不意欲為窮盡的或將本發明限制於所描述的精確形式，並且鑒於以上教示，眾多修改及變化係可能的。
在以上描述中，出於解釋的目的，已經闡述數個細節來提供對本技術的各個實施例的理解。然而，熟習此項技術者將顯而易見，某些實施例可在不具有此等細節中的一些細節或在具有額外細節的情況下實踐。
在已經描述了若干實施例的情況下，熟習此項技術者將瞭解可使用各種修改、替代構造及等效物而不脫離本發明之精神。另外，尚未描述數個熟知製程及元件以避免不必要地混淆本發明。另外，任何具體實施例的細節可能不總是存在於彼實施例的變化中或可添加到其他實施例。
在提供值範圍的情況下，應當理解，除非上下文另外明確指示，亦具體地揭示在彼範圍的上限與下限之間每個中間值直到下限單位的十分之一。在任何所述值或所述範圍中的中間值與任何其他所述值或彼所述範圍中的中間值之間的每個更小範圍涵蓋在內。可能有所述範圍中任何具體被排除在外的限值，此等較小範圍的上限及下限可獨立地包括在該範圍內或排除於該範圍外，並且任一個限值、沒有一個限值或兩個限值包括在更小範圍中的每個範圍亦在本發明內涵蓋。在所述範圍包括限值中的一個或兩個的情況下，排除任一個或兩個彼等所包括之限值的範圍亦包括在內。
如本文及隨附申請專利範圍中所使用，除非上下文另外明確指明，單數形式「一(a)」、「一(an)」及「the(該)」包括複數引用。因此，例如，提及「一種方法」包括複數個此種方法，並且提及「該層」包括提及一或多層及熟習此項技術者已知的等效物等等。出於清楚及理解的目的，本發明現已經詳細描述。然而，將瞭解，某些改變及修改可在隨附申請專利範圍的範疇內實踐。
本文引用的所有公開案、專利及專利申請案的全部內容出於所有目的以引用方式併入本文中。所有這些均不被承認為先前技術。
100‧‧‧半導體處理系統102‧‧‧遠端電漿源104‧‧‧隔離器106‧‧‧進氣口108‧‧‧輸入口110‧‧‧遠端電漿源(RPS)配接器112‧‧‧混合歧管114‧‧‧氣盒116‧‧‧氣盒加熱器118‧‧‧阻隔器120‧‧‧面板122‧‧‧選擇性模組化元件(SMD)124‧‧‧間隔件126‧‧‧基座128‧‧‧邊緣環130‧‧‧泵送襯墊/通道132‧‧‧蓋板嵌件200‧‧‧方法202‧‧‧方塊204‧‧‧方塊206‧‧‧方塊208‧‧‧方塊300‧‧‧方法302‧‧‧方塊304‧‧‧方塊306‧‧‧方塊308‧‧‧方塊310‧‧‧方塊312‧‧‧方塊314‧‧‧方塊1000‧‧‧處理工具1002‧‧‧前開式晶圓傳送盒(FOUP)1004‧‧‧機器臂1006‧‧‧保持區域1008a‧‧‧基板處理腔室1008b‧‧‧基板處理腔室1008c‧‧‧基板處理腔室1008d‧‧‧基板處理腔室1008e‧‧‧基板處理腔室1008f‧‧‧基板處理腔室1009a‧‧‧串聯部分1009b‧‧‧串聯部分1009c‧‧‧串聯部分1010‧‧‧第二機器臂2000‧‧‧處理腔室部分2001‧‧‧遠端電漿系統(RPS)單元2003‧‧‧冷卻板2005‧‧‧進氣口組件2014‧‧‧上板2015‧‧‧第一電漿區域2016‧‧‧下板2017‧‧‧面板2018‧‧‧容積2019‧‧‧第一流體通道2020‧‧‧絕緣環2021‧‧‧第二流體通道2023‧‧‧離子抑制件2025‧‧‧噴淋頭2033‧‧‧處理區域2040‧‧‧電源供應器2055‧‧‧基板2058‧‧‧氣體供應區域2059‧‧‧孔2065‧‧‧基座3025‧‧‧噴淋頭3065‧‧‧通孔3075‧‧‧孔洞4000‧‧‧處理系統4005‧‧‧處理腔室4010‧‧‧遠端電漿單元4011‧‧‧第一端4012‧‧‧第二端4013‧‧‧通道4014‧‧‧溝槽4015‧‧‧遠端電漿單元配接器4020‧‧‧隔離器4021‧‧‧隔離器通道4023‧‧‧中心孔4024‧‧‧溝槽4025‧‧‧壓力板4026‧‧‧第一端4027‧‧‧第二端4028‧‧‧中心通道4029a‧‧‧第一部分4029b‧‧‧第二部分4030‧‧‧入口配接器4031‧‧‧第二通道4032‧‧‧第一埠4033‧‧‧第三通道4034‧‧‧第二埠4035‧‧‧擴散器4036‧‧‧第一通道4037‧‧‧第二通道4038‧‧‧第三通道4039a,b,c‧‧‧溝槽4040‧‧‧混合歧管4041‧‧‧第一端4042‧‧‧第二端4043‧‧‧入口4044‧‧‧通道4045‧‧‧漸縮部分4046‧‧‧擴口部分4047‧‧‧出口4048‧‧‧加熱器4050‧‧‧氣盒4052‧‧‧入口4053‧‧‧第一表面4054‧‧‧中心通道4055‧‧‧第二表面4057‧‧‧容積4058‧‧‧第二容積4060‧‧‧阻隔板4063‧‧‧孔4065‧‧‧環形部分4070‧‧‧面板4072‧‧‧第一表面4073‧‧‧凸緣4074‧‧‧第二表面4075‧‧‧第三容積4080‧‧‧離子抑制元件4090‧‧‧蓋間隔件5000‧‧‧入口配接器5005‧‧‧中心通道5010‧‧‧第二通道5015‧‧‧第三通道5017‧‧‧第二埠
對所揭示技術的性質和益處的進一步理解可藉由參考本說明書及圖式的剩餘部分來實現。
第 1 圖 圖示了根據本技術之實施例的半導體處理系統。
第 2 圖 圖示了根據本技術之實施例的蝕刻方法。
第 3 圖 圖示了根據本技術之實施例的蝕刻方法。
第 4A 圖 、第 4B 圖 及第 4C 圖 圖示了根據本技術之實施例的使用鎳塗佈的腔室及陽極化鋁腔室的蝕刻量。
第 5 圖 圖示了根據本發明之實施例的示例性處理工具的一個實施例的頂部平面圖。
第 6A 圖 及第 6B 圖 圖示了根據本發明之實施例的示例性處理腔室的橫截面圖。
第 7 圖 圖示了根據本發明之實施例的示例性噴淋頭配置的示意圖。
第 8 圖 圖示了根據本技術之實施例的示例性處理系統的示意性橫截面圖。
第 9 圖 示出了根據本技術之實施例的入口配接器的示意性底部部分平面圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧半導體處理系統
102‧‧‧遠端電漿源
104‧‧‧隔離器
106‧‧‧進氣口
108‧‧‧輸入口
110‧‧‧遠端電漿源(RPS)配接器
112‧‧‧混合歧管
114‧‧‧氣盒
116‧‧‧氣盒加熱器
118‧‧‧阻隔器
120‧‧‧面板
122‧‧‧選擇性模組化元件(SMD)
124‧‧‧間隔件
126‧‧‧基座
128‧‧‧邊緣環
130‧‧‧泵送襯墊/通道
132‧‧‧蓋板嵌件

Claims (40)

  1. 一種半導體處理系統，該系統包含：一遠端電漿區域；一噴淋頭，其中該噴淋頭至少部分地界定一處理區域，該處理區域與該遠端電漿區域流體耦合；一入口配接器，定位在該遠端電漿區域與該噴淋頭之間，及該入口配接器界定一通道，其中該入口配接器沒有鍍鎳；一混合歧管，定位在該入口配接器與該噴淋頭之間，其中該混合歧管包含鎳；及一基座，延伸進入該處理區域，其中該處理區域進一步由一側壁被界定繞著一外部，並且其中該側壁及噴淋頭鍍有鎳。
  2. 如請求項1所述之系統，其中從該通道到一出口但不包括該通道的該處理區域由鍍有鎳的表面界定，該出口係從該處理區域通向一泵。
  3. 如請求項1所述之系統，進一步包含設置在該基座上的一圓環，其中該圓環鍍有鎳。
  4. 如請求項1所述之系統，進一步包含：一隔離器，定位在該遠端電漿區域與該入口配接器之間。
  5. 如請求項4所述之系統，其中該隔離器沒有鍍鎳。
  6. 如請求項4所述之系統，進一步包含：一第二配接器，定位在該遠端電漿區域與該入口配接器之間，其中該第二配接器沒有鍍鎳。
  7. 如請求項1所述之系統，其中該入口配接器界定來自該遠端電漿區域的一第一流動路徑，及其中該入口配接器界定繞過該遠端電漿區域的一第二流動路徑。
  8. 如請求項7所述之系統，其中該第一流動路徑與該第二流動路徑透過該入口配接器被維持流體隔離。
  9. 如請求項8所述之系統，其中該第一流動路徑與該第二流動路徑遞送至該混合歧管，以將沿著該第一流動路徑與該第二流動路徑流動的流體混合。
  10. 如請求項1所述之系統，進一步包含：一氣盒，定位在該入口配接器與該處理區域之間，其中該氣盒包含鎳。
  11. 如請求項10所述之系統，進一步包含：一阻隔板，定位在該氣盒與該處理區域之間，其中該阻隔板包含鎳。
  12. 一種半導體處理系統，該系統包含： 一遠端電漿區域；一處理腔室，與該遠端電漿區域流體耦接，該處理腔室包含：一噴淋頭，其中該噴淋頭至少部分地界定一處理區域，及一間隔件，界定該處理區域的一外徑，其中該噴淋頭與該間隔件的一內表面包含鎳；一入口配接器，定位在該遠端電漿區域與該處理腔室之間，其中該入口配接器沒有鍍鎳；及一混合歧管，定位在該入口配接器與該處理腔室之間，其中該混合歧管包含鎳。
  13. 如請求項12所述之系統，其中該入口配接器界定來自該遠端電漿區域的一第一流動路徑，及其中該入口配接器界定繞過該遠端電漿區域的一第二流動路徑。
  14. 如請求項13所述之系統，其中該第一流動路徑與該第二流動路徑透過該入口配接器被維持流體隔離。
  15. 如請求項14所述之系統，其中該第一流動路徑與該第二流動路徑與該混合歧管流體耦接，以將沿著該第一流動路徑與該第二流動路徑流動的流體混合。
  16. 如請求項12所述之系統，其中在該混合歧管的上游，沒有部件包括鍍鎳。
  17. 如請求項12所述之系統，其中在該入口配接器的下游的每個部件包含鎳。
  18. 如請求項12所述之系統，其中該處理腔室進一步包含：一基座，延伸進入該處理區域。
  19. 如請求項18所述之系統，進一步包含：一邊緣環，座落繞著該基座的一外部，其中該邊緣環包含鎳。
  20. 一種半導體處理系統，該系統包含：一遠端電漿區域；一噴淋頭，其中該噴淋頭至少部分地界定一處理區域，該處理區域與該遠端電漿區域流體耦接，其中該處理區域藉由一側壁被徑向地界定，及其中該側壁與該噴淋頭被鍍鎳；一入口配接器，定位在該遠端電漿區域與該噴淋頭之間，及該入口配接器界定一通道，其中該入口配接器沒有鍍鎳；及一混合歧管，定位在該入口配接器與該噴淋頭之間，其中該混合歧管包含鎳。
  21. 一種蝕刻方法，該方法包含： 在一腔室的一第一部分中混合電漿流出物與一氣體以形成一第一混合物，其中該第一部分包含鍍鎳材料；在該腔室的一第二部分中使該第一混合物流到一基板，其中該第二部分包含鍍鎳材料，該第一混合物在從該第一部分到該第二部分的該腔室中的一路徑中流動，及該路徑由該腔室的鍍鎳部件界定；使該第一混合物與該基板反應以相對於一第二層選擇性蝕刻一第一層；形成一第二混合物，該第二混合物包含來自該第一混合物與該基板反應的產物。
  22. 如請求項21所述之方法，其中：該第一層係一熱氧化矽層，該第二層係一矽層，並且該第一混合物與該基板反應包含蝕刻小於1埃的該第一層及大於50埃的該第二層。
  23. 如請求項21所述之方法，其中該腔室的該第二部分係在10Torr或更低的一壓力下。
  24. 如請求項21所述之方法，其中該等電漿流出物包含來自使氨及一含氟氣體流過一電漿的流出 物。
  25. 如請求項24所述之方法，其中該含氟氣體包含NF3或HF。
  26. 如請求項21所述之方法，其中該等電漿流出物包含來自使氨、NF3、氬、H2、氦及HF流過一電漿的流出物。
  27. 如請求項21所述之方法，進一步包含：使該等電漿流出物流過該腔室的不包含鍍鎳材料的一第三部分。
  28. 如請求項21所述之方法，進一步包含：使該第二混合物流過該腔室的一第三部分以離開該腔室，其中該腔室的該第三部分包含鍍鎳材料。
  29. 如請求項21所述之方法，進一步包含：使一含氫氣體與一含氟氣體流動通過一電漿以形成該等電漿流出物，及將氟原子或氫原子吸附至該鍍鎳材料上。
  30. 如請求項21所述之方法，其中該鍍鎳材料包含無電鍍鎳材料(electroless nickel plated material)。
  31. 如請求項22所述之方法，其中：該產物包含來自蝕刻氧化矽的蝕刻副產物。
  32. 如請求項28所述之方法，其中該第三部分 至少部分地藉由一泵埠界定。
  33. 如請求項21所述之方法，進一步包含：在混合該電漿流出物與該氣體之前，使該電漿流出物流動通過該腔室的一第三部分，該第三部分不包括鍍鎳材料。
  34. 如請求項33所述之方法，其中該第三部分包含一陶瓷材料。
  35. 如請求項21所述之方法，其中該鍍鎳材料包含有硼鎳或有磷鎳。
  36. 如請求項22所述之方法，其中相對於該第二層而蝕刻該第一層的選擇性大於100。
  37. 一種蝕刻方法，該方法包含：使包含氨及一含氟氣體的一第一氣體流過一電漿以形成電漿流出物；使該等電漿流出物流過一腔室的一第一部分；在該腔室的一第二部分中混合包含氨的一第二氣體與該等電漿流出物以形成一第一混合物；在該腔室的一第三部分中使該第一混合物流到一基板；使該第一混合物與該基板反應以相對於一矽層選擇性蝕刻一氧化矽層；形成一第二混合物，該第二混合物包含來自該第一 混合物與該基板反應的產物；以及使該第二混合物流過該腔室的一第四部分以離開該腔室，其中：該腔室的該第一部分不包含鍍鎳材料，該腔室的該第二部分、該第三部分及該第四部分包含鍍鎳材料，該腔室的該第三部分在10Torr或更低的一壓力下，並且使該第一混合物與該基板反應包含蝕刻小於1埃的該矽層及大於50埃的該氧化矽層。
  38. 如請求項37所述之方法，其中：該第一混合物在從該第二部分到該第四部分的該腔室中的一路徑中流動，並且該路徑由該腔室的鍍鎳部件界定。
  39. 如請求項37所述之方法，其中該鍍鎳材料包含無電鍍鎳材料(electroless nickel plated material)。
  40. 一種蝕刻方法，該方法包含：在一腔室的一第一部分中使電漿流出物與一氣體混合以形成一第一混合物，其中：該第一部分包含鍍鎳材料，及該電漿流出物包含來自使氨、NF3、氬、H2、 氦及HF流過一電漿的流出物；在該腔室的一第二部分中使該第一混合物流至一基板，其中該第二部分包含鍍鎳材料；使該第一混合物與該基板反應，以相對於一第二層選擇性蝕刻一第一層；形成一第二混合物，該第二混合物包含來自使該第一混合物與該基板反應的產物。
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