CN104040699B - 使用三氟化氯的装置中的三氟化氯供给路的内面处理方法 - Google Patents
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- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000003672 processing method Methods 0.000 title claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 12
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- 230000004927 fusion Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 31
- 229910020323 ClF3 Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003682 fluorination reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
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- 229910015900 BF3 Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
本发明提供一种能够确实地抑制在处理作业时反应室中的ClF3浓度的降低的三氟化氯供给路的内面处理方法。使作为蚀刻气体使用三氟化氯的处理装置的处理腔室(1)与气体供给路(2)和气体排出路(3)连结成一体，使与蚀刻处理操作时供给的三氟化氯气体浓度相同的浓度或者比该浓度高的浓度的三氟化氯气体作用于该形成一体的处理腔室(1)、气体供给路(2)和气体排出路(3)中的至少处理腔室(1)和气体供给路(2)的内面，至少对处理腔室(1)和气体供给路(2)的内面通过氟化膜形成覆膜。
Description
技术领域
本发明涉及一种针对通过暴露于三氟化氯(ClF3)而形成由氟化物构成的覆膜的处理装置以及连接于该处理装置的配管系统的内面部分进行处理的方法。
背景技术
在半导体、太阳能电池、感光鼓等的制造中所使用的CVD装置、PVD装置、外延生长装置等在膜形成操作系统的运转时，作为蚀刻气体使用了ClF3。
该ClF3易吸附于金属，另外在金属表面容易发生氟化反应。因此，在CVD装置、PVD装置、外延生长装置等的膜形成操作系统中，ClF3吸附于构成装置的反应室等的装置、供给路的金属上，从而会使反应室内的ClF3浓度降低。
因此，本申请人在先提出了使用在金属材料表面形成由氟化物构成的覆膜的金属材料来构成气体供给路，对处理时使用的ClF3浓度的降低进行抑制的技术(专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2009-197274号公报。
发明内容
发明要解决的课题
上述先前提出的方案是以预先附有氟化膜的材料来构成配管路，因此，在配管彼此之间、或者配管与机器之间的熔接连接部、接头引起的连接部不被氟化膜所覆盖，无法防止该不被氟化膜所覆盖的部分吸附有ClF3，且无法防止反应室内ClF3浓度的降低。
本发明就是着眼于上述观点而完成的，其目的在于提供一种能够确实地抑制在处理作业时反应室中ClF3浓度的降低的三氟化氯供给路的内面处理方法。
解决课题的方法
为了实现上述目的，本发明的技术方案1的发明的特征在于，使作为蚀刻气体使用三氟化氯的处理装置的处理腔室与气体供给路和气体排出路连结成一体，在通过三氟化氯气体进行蚀刻处理之前，使在蚀刻处理操作时供给的三氟化氯气体的浓度或者比该浓度高的浓度的三氟化氯气体作用于该形成一体的处理腔室、气体供给路和气体排出路中的至少处理腔室和气体供给路的内面，至少对处理腔室和气体供给路的内面通过氟化膜形成覆膜。
另外，本发明的技术方案2的发明的特征在于，在技术方案1中，对处理腔室与气体供给路的内面通过氟化膜形成覆膜的三氟化氯气体暴露处理，是在室温(20～30℃)实施。
发明的效果
在本发明中，将使用三氟化氯的装置的配管、机器类连结成一体后，在通过三氟化氯气体进行蚀刻处理之前，使处理操作时的三氟化氯气体的浓度或比该浓度高的浓度的三氟化氯气体，作用于构成使用三氟化氯的装置的至少处理腔室和气体供给路的内面，在处理腔室和气体供给路的内面通过氟化膜形成覆膜，由此，在未被氟化膜覆盖的配管彼此之间、配管与机器之间的熔接连接部、接头引起的连接部处，未被氟化膜覆盖的部位已不存在，当使用ClF3进行蚀刻等处理作业时供给的ClF3不会吸附于构成配管、腔室的金属原料上，因此，能够确实地抑制ClF3的处理作业时的浓度的降低。
另外，如技术方案2所公开的那样，优选在处理腔室和气体供给路的内面通过氟化膜形成覆膜的暴露处理是在室温(20～30℃)实施。由此，在配管、腔室的内壁面不会发生加热偏差，能够均匀地形成用以抑制浓度降低的充分的氟化膜。若在60℃以上的高温环境中实施该暴露处理，则所谓配管内发生腐蚀的负面效果显著。
附图说明
图1是表示适用本发明的使用三氟化氯的装置的一个实例的概要结构图。
图2是表示处理时间与蚀刻量的关系的图表。
具体实施方式
作为本发明的实施方式，是以使用三氟化氯(ClF3)作为处理气体或清洗气体的半导体薄膜制造装置为例进行说明。该半导体薄膜装置，是由CVD装置、PVD装置、外延生长装置等的处理腔室(1)、对该处理腔室(1)导入处理气体的气体供给路(2)、以及连接于处理腔室(1)且导出前述处理气体的气体排出路(3)所构成。
在气体供给路(2)的气体导入侧的端部，分岔成两股，并通过分别安装在各分岔路的调节器(4)和质量流量控制器(5)，使一端连接于三氟化氯(ClF3)的供给源(6)，而另一端于连接氩气(Ar)的供给源(7)。
在连接于处理腔室(1)的气体排出路(3)中，从处理腔室(1)侧起依次安装有可调流量阀(8)、真空泵(9)、除害装置(10)。
例如，在半导体、太阳能电池等的制造中规格化的薄膜形成用的CVD装置、PVD装置等的膜形成操作系统中，使用硅烷系气体在基板上形成Si薄膜，并在该Si薄膜的蚀刻处理中使用ClF3气体。
本发明是，在通过ClF3气体进行蚀刻处理前，使与蚀刻处理时的ClF3气体浓度相同的或者比其更高浓度的ClF3气体发生作用，针对处理腔室和气体供给路的内面，通过氟化膜形成覆膜。
如此一来，在通过ClF3气体进行蚀刻处理之前，使与蚀刻处理时的ClF3气体浓度相同的或者比其更高浓度的ClF3气体发生作用，并针对处理腔室和气体供给路的内面暴露ClF3气体，由此预先使处理腔室和气体供给路的内面通过氟化膜形成覆膜，则配管系统和处理腔室的内面全体被氟化膜所覆盖，因此，能够确实地抑制，在使用ClF3气体进行蚀刻等处理作业时供给的ClF3气体被吸附于构成配管、腔室的金属原料上而导致ClF3气体在处理作业时浓度降低。
此外，利用该ClF3气体进行的暴露处理(预处理)，优选在室温(20℃～30℃)实施。由此，在配管、腔室的内壁面不会发生加热偏差，因此，能够均匀地形成用以抑制浓度降低的充分的氟化膜。若在60℃以上的高温环境中实施利用该ClF3气体进行的暴露处理，则所谓配管内发生腐蚀的负面效果显著化。
实施例1
为了比较有没有预先实施ClF3气体的暴露处理对蚀刻处理的效果，通过图1中所示的装置，作为构成气体供给路(2)的配管，使用了按以下所示条件预先实施ClF3气体的暴露处理的配管以及未实施暴露处理的配管，针对将处理腔室(1)内已配置的多晶硅膜进行制膜而成的试样，按以下所示条件进行了蚀刻。此外，作为减少ClF3气体浓度的主要部位的、从气动阀(11)至手动阀(12)之间的气体供给路(2)，形成为配管直径1/4"、配管长度4m(配管内壁表面积：54636mm2)。
ClF3的预先暴露处理条件如下所示。
ClF3气体浓度：100％；
温度：室温(20℃)。
此外，ClF3的预先暴露是通过将100％ClF3气体封入处理系统内保持72小时来实施。
蚀刻处理的条件如下所述：
ClF3气体浓度：500ppm(氩气平衡)；
处理腔室(1)内压强：500Torr(66.7kPa)；
温度：室温(20℃)。
将其结果示于表1、表2中。
表1 多晶硅(Poly-Si)的蚀刻量
工业实用性
本发明能够应用于半导体、太阳能电池、感光鼓等的制造中所用的CVD装置、PVD装置、外延生长装置等的半导体薄膜的形成。
附图标记的说明
1处理腔室；2气体供给路；3气体排出路。
Claims (2)
1.一种使用三氟化氯的处理装置中的内面处理方法，其特征在于，其使作为蚀刻气体使用三氟化氯的处理装置的处理腔室(1)与气体供给路(2)和气体排出路(3)连结成一体，在通过三氟化氯气体进行蚀刻处理之前，使比蚀刻处理操作时供给的三氟化氯气体浓度高的浓度的三氟化氯气体作用于该形成一体的处理腔室(1)、气体供给路(2)和气体排出路(3)中的至少处理腔室(1)和气体供给路(2)的内面，至少对处理腔室(1)和气体供给路(2)和这些中含有的配管彼此之间或配管与机器之间的熔接连接部的内面通过氟化膜形成覆膜。
2.如权利要求1所述的使用三氟化氯的处理装置中的内面处理方法，其中，对处理腔室(1)和气体供给路(2)的内面通过氟化膜形成覆膜的三氟化氯气体暴露处理，是在室温环境20～30℃实施。
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| US20150041430A1 (en) | 2015-02-12 |
| CN104040699A (zh) | 2014-09-10 |
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