JP7348964B2 - フッ素および金属ハロゲン化物を使用した金属酸化物のエッチング - Google Patents
フッ素および金属ハロゲン化物を使用した金属酸化物のエッチング Download PDFInfo
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- JP7348964B2 JP7348964B2 JP2021572634A JP2021572634A JP7348964B2 JP 7348964 B2 JP7348964 B2 JP 7348964B2 JP 2021572634 A JP2021572634 A JP 2021572634A JP 2021572634 A JP2021572634 A JP 2021572634A JP 7348964 B2 JP7348964 B2 JP 7348964B2
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- 238000005530 etching Methods 0.000 title claims description 41
- 150000004706 metal oxides Chemical class 0.000 title claims description 33
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 32
- 239000011737 fluorine Substances 0.000 title description 11
- 229910052731 fluorine Inorganic materials 0.000 title description 11
- 229910001507 metal halide Inorganic materials 0.000 title description 10
- 150000005309 metal halides Chemical class 0.000 title description 10
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 58
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 33
- 239000012025 fluorinating agent Substances 0.000 claims description 32
- 150000004820 halides Chemical class 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910004166 TaN Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000003575 carbonaceous material Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 94
- 239000007789 gas Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 239000000376 reactant Substances 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003682 fluorination reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229940126062 Compound A Drugs 0.000 description 3
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 organic acid fluoride Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910015275 MoF 6 Inorganic materials 0.000 description 1
- 229910019800 NbF 5 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
Claims (20)
- 金属酸化物層を上に有する基板表面をフッ素化剤に曝露して、フッ化物層を形成することと、
前記フッ化物層をハロゲン化物エッチャントに曝露して、前記フッ化物層を除去することであって、前記ハロゲン化物エッチャントが、一般式MXy(Mは、チタン(Ti)、スズ(Sn)、モリブデン(Mo)、タングステン(W)、およびニオブ(Nb)のうちの1つ以上を含み、Xは、Cl、Br、およびIのうちの1つ以上を含む)を有する化合物を含む、前記フッ化物層をハロゲン化物エッチャントに曝露して、前記フッ化物層を除去することと、
を含むエッチングプロセス。 - 前記金属酸化物層が、ハフニウム、タングステン、モリブデン、およびチタンのうちの1つ以上を含む、請求項1に記載のエッチングプロセス。
- 前記金属酸化物層が、本質的に酸化ハフニウムからなる、請求項2に記載のエッチングプロセス。
- 前記フッ素化剤が、HF、NF3、一般式CxHyFz(xは1~16、yは0~33、zは1~34)を有する有機フッ化物、一般式CxHyOwFz(xは1~16、yは0~33、wは1~8、zは1~34)を有する有機酸フッ化物、金属フッ化物、それらの組み合わせ、およびそれらのプラズマのうちの1つ以上を含む、請求項1に記載のエッチングプロセス。
- 前記ハロゲン化物エッチャントが、一般式EX3(Eは、アルミニウム(Al)およびホウ素(B)のうちの1つ以上を含み、Xは、Cl、Br、およびIのうちの1つ以上を含む)を有する化合物を含む、請求項1に記載のエッチングプロセス。
- 前記yは、1~6である、請求項1に記載のエッチングプロセス。
- 前記フッ素化剤および前記ハロゲン化物エッチャントへの曝露を繰り返して、所定の厚さの前記金属酸化物層を除去することを、さらに含む、請求項1に記載のエッチングプロセス。
- 前記フッ素化剤が、水素(H2)と一緒に流され、前記フッ化物層が、10Åから15Åの範囲の厚さを有する、請求項1に記載のエッチングプロセス。
- 前記フッ化物層が、ニッケルチャンバ材料を含むプロセスチャンバ内で形成される、請求項8に記載のエッチングプロセス。
- 前記基板表面を前記フッ素化剤に曝露する前に、前記基板表面を、H*、OH*、O*、およびH2O*のうちの1つ以上を含む洗浄プラズマに曝露することを、さらに含む、請求項1に記載のエッチングプロセス。
- 前記洗浄プラズマが、前記基板表面から炭素膜および/または水分を除去する、請求項10に記載のエッチングプロセス。
- 前記炭素膜および/または水分が、エッチングプロセスの結果である、請求項11に記載のエッチングプロセス。
- 前記基板表面が、少なくとも1つの他の材料を有し、前記金属酸化物層が、前記少なくとも1つの他の材料よりも選択的にエッチングされる、請求項1に記載のエッチングプロセス。
- 前記少なくとも1つの他の材料が、TiN、TaN、SiN、SiO2、Al2O3、および炭素系材料のうちの1つ以上を含む、請求項13に記載のエッチングプロセス。
- エッチング選択性が、10:1以上である、請求項13に記載のエッチングプロセス。
- 金属酸化物層上に形成された酸水素化物層を上に有する基板表面をフッ素化剤に曝露して、フッ化物層を形成することと、
前記フッ化物層をハロゲン化物エッチャントに曝露して、前記フッ化物層を除去することであって、前記ハロゲン化物エッチャントが、一般式MXy(Mは、チタン(Ti)、スズ(Sn)、モリブデン(Mo)、タングステン(W)、およびニオブ(Nb)のうちの1つ以上を含み、Xは、Cl、Br、およびIのうちの1つ以上を含む)を有する化合物を含む、前記フッ化物層をハロゲン化物エッチャントに曝露して、前記フッ化物層を除去することと、
を含むエッチングプロセス。 - 金属酸化物層を上に有する基板表面を、H2O、H2O2、およびアルコールのうちの1つ以上から形成されたプラズマに曝露して、前記酸水素化物層を形成することを、さらに含む、請求項16に記載のエッチングプロセス。
- 前記金属酸化物層が、本質的に酸化ハフニウムからなる、請求項17に記載のエッチングプロセス。
- 金属酸化物層および第2の材料であって、TiN、SiN、TaN、SiO、AlO、LaO、炭素、ケイ素、およびそれらの組み合わせのうちの1つ以上を含む第2の材料を有する基板表面を、ニッケルチャンバ材料を含むプロセスチャンバ内でフッ素化剤に曝露して、前記金属酸化物層の一部をフッ化物層に選択的に変えることと、
前記フッ化物層をハロゲン化物エッチャントに曝露して、前記フッ化物層を除去することと、
を含むエッチングプロセス。 - 前記第2の材料が、本質的にケイ素からなり、前記エッチングプロセスが、約20:1以上の選択性を有する、請求項19に記載のエッチングプロセス。
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JP2023145720A JP2024001011A (ja) | 2019-06-11 | 2023-09-08 | フッ素および金属ハロゲン化物を使用した金属酸化物のエッチング |
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US201962860217P | 2019-06-11 | 2019-06-11 | |
US62/860,217 | 2019-06-11 | ||
PCT/US2020/037126 WO2020252097A1 (en) | 2019-06-11 | 2020-06-11 | Etching of metal oxides using fluorine and metal halides |
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US (2) | US11239091B2 (ja) |
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US11462414B2 (en) * | 2021-03-08 | 2022-10-04 | Tokyo Electron Limited | Atomic layer etching of metal oxides |
TW202335068A (zh) * | 2021-12-17 | 2023-09-01 | 德商馬克專利公司 | 鋯及鉿之氧化物的各向同性熱原子層蝕刻 |
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US20170243755A1 (en) | 2016-02-23 | 2017-08-24 | Tokyo Electron Limited | Method and system for atomic layer etching |
JP2018026566A (ja) | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
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US8183161B2 (en) * | 2006-09-12 | 2012-05-22 | Tokyo Electron Limited | Method and system for dry etching a hafnium containing material |
US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
JP2018500767A (ja) | 2014-12-18 | 2018-01-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ コロラド,ア ボディー コーポレイトTHE REGENTS OF THE UNIVERSITY OF COLORADO,a body corporate | 逐次的な自己制御熱反応を使用する原子層エッチング(ale)の新規の方法 |
US9786503B2 (en) * | 2015-04-08 | 2017-10-10 | Tokyo Electron Limited | Method for increasing pattern density in self-aligned patterning schemes without using hard masks |
WO2017205658A1 (en) | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
JP7062658B2 (ja) * | 2016-12-09 | 2022-05-06 | エーエスエム アイピー ホールディング ビー.ブイ. | 熱原子層エッチングプロセス |
US10208383B2 (en) * | 2017-02-09 | 2019-02-19 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
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US20170243755A1 (en) | 2016-02-23 | 2017-08-24 | Tokyo Electron Limited | Method and system for atomic layer etching |
JP2018026566A (ja) | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
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US20220139720A1 (en) | 2022-05-05 |
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US11239091B2 (en) | 2022-02-01 |
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