JP6811202B2 - エッチングする方法及びプラズマ処理装置 - Google Patents
エッチングする方法及びプラズマ処理装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 102
- 238000005530 etching Methods 0.000 title claims description 54
- 238000012545 processing Methods 0.000 title claims description 48
- 239000007789 gas Substances 0.000 claims description 171
- 239000000758 substrate Substances 0.000 claims description 157
- 238000001179 sorption measurement Methods 0.000 claims description 57
- 230000008021 deposition Effects 0.000 claims description 52
- 239000012528 membrane Substances 0.000 claims description 51
- 239000013626 chemical specie Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 28
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 26
- 229910052731 fluorine Inorganic materials 0.000 claims description 26
- 239000011737 fluorine Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 239000013049 sediment Substances 0.000 claims description 2
- 238000002474 experimental method Methods 0.000 description 33
- 239000011261 inert gas Substances 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 7
- 101150064718 IML2 gene Proteins 0.000 description 6
- 101100113006 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) IML3 gene Proteins 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
工程ST1
内部空間10sにおける圧力:20mTorr(2.666Pa)
第1の高周波電力:60MHz、100W
第2の高周波電力:40MHz、100W
CH3Fガスの流量/Arガスの流量:15sccm/200sccm
処理時間:5秒
工程ST2
内部空間10sにおける圧力:200mTorr(26.66Pa)
第1の高周波電力:0W
第2の高周波電力:0W
アミノシランガスの流量/Arガスの流量:100sccm/300sccm
処理時間:15秒
工程STb
内部空間10sにおける圧力:200mTorr(26.66Pa)
第1の高周波電力:0W
第2の高周波電力:0W
Arガスの流量:300sccm
処理時間:10秒
工程ST3
内部空間10sにおける圧力:20mTorr(2.666Pa)
第1の高周波電力:60MHz、100W
第2の高周波電力:40MHz、300W
Arガスの流量:200sccm
処理時間:5秒
Claims (16)
- 基板をエッチングする方法であって、
前記基板上に堆積膜を形成する工程であり、該堆積膜は第1のガスから生成されたプラズマに含まれる化学種から形成され、該基板は、第1領域及び該第1領域の材料とは異なる材料から形成された第2領域を有する、該工程と、
その上に前記堆積膜が形成された前記基板に、前駆体ガスを供給する工程であり、該前駆体ガスを用いて該基板上に吸着膜を形成する、該工程と、
その上に前記堆積膜及び前記吸着膜が形成された前記基板に第2のガスから生成されたプラズマからのイオンを供給して前記第1領域の前記材料と前記堆積膜に含まれる前記化学種とを反応させることにより、前記第2領域に対して選択的に前記第1領域をエッチングする工程であり、前記吸着膜によって前記第2領域のエッチングレートを減少させる、該工程と、
を含む方法。 - 前記吸着膜は、前記第2領域をエッチングする前記堆積膜中の化学種の量を減少させる、請求項1に記載の方法。
- 前記堆積膜は、炭素、水素、及びフッ素を含む、請求項1又は2に記載の方法。
- 前記第1領域は、窒化シリコンから形成されている、請求項3に記載の方法。
- 前記吸着膜は、前記第2領域をエッチングする前記堆積膜中のフッ素の量を減少させる、請求項3に記載の方法。
- 前記第1のガスは、ハイドロフルオロカーボンガスを含む、請求項1〜5の何れか一項に記載の方法。
- 前記ハイドロフルオロカーボンガスは、CH3Fガスを含む、請求項6に記載の方法。
- 前記第2領域は、シリコンを含む、請求項1〜7の何れか一項に記載の方法。
- 前記吸着膜は、シリコンを含む、請求項8に記載の方法。
- 前記前駆体ガスは、シリコン含有ガスである、請求項1〜9の何れか一項に記載の方法。
- 基板をエッチングする方法であって、
第1領域及び該第1領域とは異なる材料から形成された第2領域を有する基板を提供する工程と、
前記基板上に堆積膜を形成する工程と、
前記堆積膜がその上に形成された前記基板上に単分子の吸着膜を形成する工程と、
その上に前記堆積膜及び前記吸着膜が形成された前記基板にプラズマからのイオンを供給して前記第1領域の材料と前記堆積膜に含まれる化学種とを反応させることにより、前記第2領域に対して選択的に前記第1領域をエッチングする工程であり、前記吸着膜によって前記第2領域のエッチングレートを減少させる、該工程と、
を含む方法。 - 前記第1領域が前記基板において開口を画成する底部であり、前記第2領域が該開口を画成する側部であるように、前記基板に該開口を形成する工程を更に含む、請求項11に記載の方法。
- 前記基板は、前記第1領域及び前記第2領域を含む膜を含み、前記開口は該膜に形成される、請求項12に記載の方法。
- 前記膜は、シリコン酸化膜又はSiOCH膜である、請求項13に記載の方法。
- 前記堆積膜は、炭素及びフッ素を含み、前記吸着膜は、前記堆積膜におけるフッ素の量を減少させる、請求項11に記載の方法。
- 内部空間を有するチャンバと、
前記チャンバの前記内部空間の中で基板を支持する支持台と、
前記チャンバの前記内部空間に、第1のガス、第2のガス、及び前駆体ガスを含む複数のガスを供給するガス供給部と、
前記チャンバの前記内部空間の中のガスを励起させてプラズマを生成するプラズマ生成部と、
前記ガス供給部及び前記プラズマ生成部を制御する制御部と、
を備え、
前記制御部は、第1領域及び該第1領域とは異なる材料から形成された第2領域を有する基板が前記支持台上に載置された状態で、前記チャンバの前記内部空間の中で前記第1のガスからプラズマを生成するよう、前記ガス供給部及び前記プラズマ生成部を制御し、前記第1のガスから生成された前記プラズマに含まれる化学種から前記基板上に堆積膜が形成され、
前記制御部は、その上に前記堆積膜が形成された前記基板が前記支持台上に載置された状態で、該基板に前記前駆体ガスを供給するよう、前記ガス供給部を制御し、該前駆体ガスに含まれる前駆体から該基板上に吸着膜が形成され、
前記制御部は、その上に前記堆積膜及び前記吸着膜が形成された前記基板が前記支持台上に載置された状態で、前記内部空間の中で前記第2のガスからプラズマを生成するよう、前記ガス供給部及び前記プラズマ生成部を制御し、該第2のガスから生成されたプラズマからのイオンが該基板に供給され、前記第1領域の材料と前記堆積膜に含まれる前記化学種とが反応して、前記第1領域がエッチングされ、
前記吸着膜は、前記第1領域のエッチング中の前記第2領域のエッチングレートを減少させる、
プラズマ処理装置。
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