TWI760555B - 蝕刻方法 - Google Patents
蝕刻方法 Download PDFInfo
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- TWI760555B TWI760555B TW107130215A TW107130215A TWI760555B TW I760555 B TWI760555 B TW I760555B TW 107130215 A TW107130215 A TW 107130215A TW 107130215 A TW107130215 A TW 107130215A TW I760555 B TWI760555 B TW I760555B
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- 238000000034 method Methods 0.000 title claims abstract description 223
- 238000005530 etching Methods 0.000 title claims abstract description 88
- 239000007789 gas Substances 0.000 claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 60
- 239000010937 tungsten Substances 0.000 claims abstract description 60
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000012545 processing Methods 0.000 claims abstract description 44
- 239000002243 precursor Substances 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- 230000008569 process Effects 0.000 claims description 163
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- -1 tungsten halide Chemical class 0.000 claims description 6
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000002474 experimental method Methods 0.000 description 22
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 20
- 239000012159 carrier gas Substances 0.000 description 13
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 9
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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Abstract
本發明之目的係提供一蝕刻方法,其可保護對含矽膜之蝕刻的耐受性優異之遮罩。本發明一實施形態之蝕刻方法,係在被加工物配置於腔室本體內之狀態下執行。此一蝕刻方法包含下列製程:於被加工物上形成鎢膜;蝕刻被加工物之含矽膜。形成鎢膜之製程具有下列製程:將含有鎢之前驅物氣體供至被加工物;產生氫氣的電漿而將氫之活性物種供至被加工物上之前驅物。在蝕刻含矽膜之製程中,在腔室本體內產生含有氟、氫及碳之處理氣體的電漿。
Description
本揭示係有關於一種蝕刻方法。
在電子裝置之製造中,以電漿進行含矽膜之蝕刻。含矽膜由氧化矽、氮化矽這樣的含矽材料形成。舉例而言,在具有三維構造之NAND型快閃記憶體之製造中,進行包含交互疊層的複數之矽氧化膜及複數之矽氮化膜在內的作為含矽膜之多層膜的蝕刻。在含矽膜之蝕刻中,遮罩使用含有非晶碳這樣的碳之遮罩。遮罩形成有開口。
關於多層膜之蝕刻,記載於專利文獻1。在記載於專利文獻1之蝕刻中,產生氫氟碳化物氣體電漿,以從來自電漿之氟的活性物種蝕刻多層膜。在多層膜之蝕刻中,於遮罩上形成含有碳之沉積物,以該沉積物保護遮罩。 [先前技術文獻] [專利文獻]
[專利文獻1]美國專利申請公開第2013/0059450號說明書
[發明欲解決之問題]
對上述多層膜及單一矽氧化膜這樣的含矽膜要求形成高長寬比之開口或形成深開口。為於含矽膜形成此種開口,需於該含矽膜之蝕刻中保護抗蝕刻性更優異之遮罩。 [解決問題之手段]
在一態樣中,提供含矽膜之蝕刻方法。含矽膜具有單一之矽氧化膜或交互疊層的複數之矽氧化膜及複數之矽氮化膜。蝕刻方法在具有含矽膜之被加工物配置於電漿處理裝置之腔室本體內的狀態下執行,被加工物更具有設於含矽膜上之遮罩。遮罩含有碳,並於遮罩形成有開口。此蝕刻方法包含有下列製程:於被加工物上形成鎢膜;蝕刻含矽膜。形成鎢膜之製程具有下列製程:將含有鎢之前驅物氣體供至被加工物而使含有鎢之前驅物沉積於被加工物上;產生氫氣的電漿而將氫之活性物種供至被加工物上之前驅物。在蝕刻含矽膜之製程中,在腔室本體內產生含有氟、氫及碳之處理氣體的電漿而蝕刻含矽膜。
在一態樣之蝕刻方法中,鎢膜形成於遮罩上。因而,在蝕刻中,遮罩以抗蝕刻性優於含碳物質之材料保護。然而,在不使用電漿之原子層沉積法所行之鎢膜的形成中,為使用以去除前驅物中之雜質的反應產生,被加工物之溫度通常設定為250℃以上之溫度。另一方面,在一態樣之蝕刻方法中,由於以來自氫氣的電漿之氫的活性物種去除前驅物中之雜質而形成鎢膜,故可將形成鎢膜之製程執行中的被加工物之溫度設定為低溫。在此,被加工物之溫度越低,含矽膜之蝕刻速率越高。因而,在一態樣之蝕刻方法中,藉將形成鎢膜之製程執行中的被加工物之溫度與蝕刻含矽膜之製程執行中的被加工物之溫度設定為較低之溫度,可使形成鎢膜之製程執行中的被加工物之溫度與蝕刻含矽膜之製程執行中的被加工物之溫度的差少。是故,在形成鎢膜之製程與蝕刻含矽膜的製程之間,不需變更被加工物之溫度,或可使變更被加工物之溫度的時間短。結果,可提高包含鎢膜之形成及含矽膜之蝕刻的程序之生產量。
在一實施形態中,交互反覆進行形成鎢膜之製程與蝕刻含矽膜之製程。
在一實施形態之形成鎢膜的製程中,交互反覆進行供給前驅物氣體之製程與產生氫氣的電漿之製程。
在一實施形態之形成鎢膜的製程及蝕刻含矽膜之製程中,將被加工物之溫度設定為0℃以下之溫度。在一實施形態之形成鎢膜的製程及蝕刻含矽膜之製程中,將被加工物之溫度設定為-20℃以下之溫度。
在一實施形態中,前驅物氣體係鹵化鎢氣體。在一實施形態中,前驅物氣體係六氟化鎢氣體。 [發明之功效]
如以上所說明,可於含矽膜之蝕刻中保護抗蝕刻性更優異之遮罩。
[用以實施發明之形態]
以下,參照圖式,就各種實施形態詳細地說明。此外,在各圖式,對同一或相當之部分附上同一符號。
圖1係顯示一實施形態之蝕刻方法的流程圖。圖1所示之蝕刻方法(以下稱為「方法MT」)係為了蝕刻含矽膜而執行。圖2係可應用圖1所示之蝕刻方法的一例之被加工物的部分放大截面圖。圖2所示之一例的被加工物W具有含矽膜SF。含矽膜SF設於基底層UL上。
含矽膜SF具有複數之第1膜F1及複數之第2膜F2。複數之第1膜F1及複數之第2膜F2交互疊層。複數之第1膜F1由氧化矽形成。複數之第2膜F2由氮化矽形成。即,被加工物W具有交互疊層的複數之矽氧化膜及複數之矽氮化膜。在圖2所示之例中,第1膜F1係設於基底層UL正上方之最下層的膜,第2膜F2亦可為設於基底層UL正上方之最下層的膜。又,在圖2所示之例中,第1膜F1係設於遮罩MK正下方之最上層的膜,第2膜F2亦可為設於基底層UL正下方之最上層的膜。
被加工物W更具有遮罩MK。遮罩MK設於含矽膜SF上。遮罩MK由含碳之材料形成。遮罩MK可為非晶碳製遮罩。於遮罩MK形成有開口OM。開口OM使含矽膜SF之表面部分露出。開口OM為洞或溝。在方法MT中,遮罩MK之圖形藉電漿之蝕刻轉印至含矽膜SF。
以下,以將方法MT應用於圖2所示之被加工物W的情形為例,就方法MT作說明。然而,應用方法MT之被加工物不限圖2所示之被加工物。方法MT在被加工物W配置於電漿處理裝置之腔室本體內的狀態下執行。
圖3係例示可用於圖1所示之蝕刻方法的執行之電漿處理裝置的圖。圖3所示之電漿處理裝置10係電容耦合型電漿蝕刻裝置。電漿處理裝置10包含有腔室本體12。腔室本體12呈大約圓筒形,提供內部空間12s。腔室本體12由例如鋁形成。腔室本體12之內壁面被施行了具耐電漿性之處理。舉例而言,腔室本體12之內壁面被施行了陽極氧化處理。腔室本體12電性接地。
於腔室本體12之側壁形成有通路12p。被加工物W於搬入至內部空間12s中時,及從內部空間12s搬出時,通過通路12p。此通路12p可藉閘閥12g開關。
於腔室本體12之底部上設有支撐部13。支撐部13由絕緣材料形成。支撐部13呈大約圓筒形狀。支撐部13在內部空間12s中從腔室本體12之底部往鉛直方向延伸。支撐部13支撐台14。台14設於內部空間12s中。
台14具有下部電極18及靜電吸盤20。台14更具有電極板16。電極板16由例如鋁這樣的導電性材料形成,呈大約圓盤形狀。下部電極18設於電極板16上。下部電極18由例如鋁這樣的導電性材料形成,呈大約圓盤形狀。下部電極18電性連接於電極板16。
靜電吸盤20設於下部電極18上。可於靜電吸盤20之上面上載置被加工物W。靜電吸盤20具有由介電體形成之本體。於靜電吸盤20之本體內設有膜狀電極。靜電吸盤20之電極藉由開關連接於直流電源22。當對靜電吸盤20之電極施加來自直流電源22之電壓時,在靜電吸盤20與被加工物W之間產生靜電引力。藉所產生之靜電引力,被加工物W被吸引至靜電吸盤20,以該靜電吸盤20保持。
對焦環FR於下部電極18之周緣部上配置成包圍被加工物W之邊緣。對焦環FR係為使蝕刻之均一性提高而設。對焦環FR並未限定,可由矽、碳化矽、或石英形成。
於下部電極18之內部設有流路18f。可將冷媒從設於腔室本體12之外部的冷卻單元26經由配管26a供至流路18f。供至流路18f之冷媒可經由配管26b返回至冷卻單元26。在電漿處理裝置10中,藉冷媒與下部電極18之熱交換,調整載置於靜電吸盤20上之被加工物W的溫度。
於電漿處理裝置10設有氣體供給管路28。氣體供給管路28將來自傳熱氣體供給機構之傳熱氣體、例如He氣體供至靜電吸盤20之上面與被加工物W的背面之間。
電漿處理裝置10更包含有上部電極30。上部電極30設於台14之上方。上部電極30藉由構件32支撐於腔室本體12之上部。構件32由具絕緣性之材料形成。上部電極30可包含頂板34及支撐體36。頂板34之下面係內部空間12s側之下面,劃分出內部空間12s。頂板34可由焦耳熱少之低電阻導電體或半導體形成。於頂板34形成有複數之氣體吐出孔34a。複數之氣體吐出孔34a將該頂板34於其板厚方向貫穿。
支撐體36將頂板34支撐成裝卸自如,可由鋁這樣的導電性材料形成。於支撐體36之內部設有氣體擴散室36a。分別連通複數之氣體吐出孔34a的複數之氣體流通孔36b從氣體擴散室36a往下方延伸。於支撐體36形成有將處理氣體引導至氣體擴散室36a之氣體導入口36c。於氣體導入口36c連接有氣體供給管38。
氣體源群40經由閥群42及流量控制器群44連接於氣體供給管38。氣體源群40具有複數之氣體源。複數之氣體源具有構成在方法MT利用之處理氣體的複數之氣體的源。閥群42具有複數之開關閥。流量控制器群44具有複數之流量控制器。複數之流量控制器分別係質量流量控制器或壓力控制式流量控制器。氣體源群40的複數之氣體源經由閥群42之對應的閥及流量控制器群44之對應的流量控制器,連接於氣體供給管38。
在電漿處理裝置10,屏蔽件46沿著腔室本體12之內壁設成裝卸自如。屏蔽件46亦設於支撐部13之外周。屏蔽件46防止蝕刻副產物附著於腔室本體12。屏蔽件46藉於例如鋁材被覆Y2
O3
等陶瓷而構成。
於支撐部13與腔室本體12的側壁之間設有擋板48。擋板48藉於例如鋁製母材被覆Y2
O3
等陶瓷而構成。於擋板48形成有複數之貫穿孔。於擋板48之下方且亦是腔室本體12之底部設有排氣口12e。排氣裝置50經由排氣管52連接於排氣口12e。排氣裝置50具有壓力控制閥、及渦輪分子泵這樣的真空泵。
電漿處理裝置10更包含有第1射頻電源62及第2射頻電源64。第1射頻電源62係產生電漿產生用第1射頻之電源。第1射頻之頻率為例如27MHz~100MHz之範圍內的頻率。第1射頻電源62經由匹配器66及電極板16連接於下部電極18。匹配器66具有用以使第1射頻電源62之輸出阻抗與負載側(下部電極18側)之輸入阻抗匹配的電路。此外,第1射源電源62亦可經由匹配器66連接於上部電極30。
第2射頻電源64係產生用以將離子引入至被加工物W之第2射頻的電源。第2射頻之頻率低於第1射頻之頻率。第2射頻之頻率為例如400kHz~13.56MHz之範圍內的頻率。第2射頻電源64經由匹配器68及電極板16連接於下部電極18。匹配器68具有用以使第2射頻電源64之輸出阻抗與負載側(下部電極18側)之輸入阻抗匹配的電路。
電漿處理裝置10更可包含有直流電源部70。直流電源部70連接於上部電極30。直流電源部70可產生負的直流電壓而於上部電極30施予該直流電壓。
電漿處理裝置10可更包含有控制部Cnt。控制部Cnt可為包含有處理器、記憶部、輸入裝置、顯示裝置等之電腦。控制部Cnt控制電漿處理裝置10之各部。在控制部Cnt,可使用輸入裝置,進行指令之輸入操作等而使操作員可管理電漿處理裝置10。在控制部Cnt,藉顯示裝置,可將電漿處理裝置10之運轉狀況可視化而顯示。再者,於控制部Cnt之記憶部儲存有用以藉處理器控制在電漿處理裝置10執行之各種處理的控制程式、及配方資料。控制部Cnt之處理器執行控制程式,根據配方資料,控制電漿處理裝置10之各部,藉此,在電漿處理裝置10執行方法MT。
再參照圖1,以使用電漿處理裝置10之情形為例,就方法MT作說明。然而,在方法MT之執行所使用的電漿處理裝置並不限電漿處理裝置10。在以下之說明中,除了圖1,還參照圖4~圖7。圖4係圖1所示之蝕刻方法的製程ST1之隨時間變化圖。在圖4,橫軸顯示時間。又,在圖4中,縱軸顯示載體氣體之流量、前驅物氣體之流量、氫氣之流量、及射頻之狀態。在圖4中,射頻開(ON)係表示為了產生電漿而至少供給第1射頻,射頻關(OFF)則表示停止第1射頻及第2射頻之供給。圖5係在圖1所示之蝕刻方法執行中於其上形成有鎢膜之狀態的被加工物之部分放大截面圖。圖6係在圖1所示之蝕刻方法執行中含矽膜部分被蝕刻之狀態的被加工物之部分放大截面圖。圖7係應用圖1所示之蝕刻方法後的狀態之被加工物的部分放大截面圖。
在方法MT,執行製程ST1。在製程ST1,於被加工物W上形成鎢膜WF。在製程ST1,為形成鎢膜WF,而執行週期CY1次以上。各週期CY具有製程ST11及製程ST13。在製程ST1,執行週期CY複數次時,交互執行製程ST11與製程ST13。在一實施形態中,各週期CY具有在製程ST11與製程ST13之間執行的製程ST12。又,各週期CY具有在製程ST13後執行之製程ST14。
在製程ST11,將前驅物氣體供至被加工物W而使含有鎢之前驅物沉積於被加工物W上。即,將前驅物氣體供至腔室本體12之內部空間12s。前驅物氣體含有鎢。前驅物氣體可為鹵化鎢氣體。一例之前驅物氣體係六氟化鎢(WF6
)氣體。前驅物氣體亦可為六氯化鎢這樣的其他鹵化鎢氣體、或其他之含鎢氣體。在製程ST11,不產生電漿。即,在製程ST11,停止第1射頻及第2射頻之供給。
在製程ST11,亦可將載體氣體與前驅物氣體一同供至內部空間12s。載體氣體可為He氣體、Ne氣體、Ar氣體、Xe氣體、Kr氣體這樣的稀有氣體。在一實施形態中,如圖4所示,亦可在製程ST1之執行期間,將載體氣體供至內部空間12s。在製程ST11,可將前驅物氣體之流量設定為100sccm以上、300sccm以下之流量。在製程ST11,可將載體氣體之流量設定為0sccm以上、3000sccm以下之流量。又,在製程ST11,可將內部空間12s之壓力設定為0.02Torr(2.6Pa)以上、3Torr(400Pa)以下之壓力。
在接續之製程ST12中,執行內部空間12s之驅氣。具體而言,在製程ST12,執行內部空間12s之排氣。在製程ST12,亦可將載體氣體作為驅氣氣體供至內部空間12s。藉製程ST12之執行,而將內部空間12s中之前驅物氣體排出,而去除過多地沉積於被加工物W上之前驅物。
在接續之製程ST13中,在內部空間12s中產生氫氣(H2
氣體)電漿,而將氫之活性物種供至被加工物W上之前驅物。在製程ST13,如圖4所示,於執行製程ST12後,且於執行製程ST13前,開始將氫氣供至內部空間12s而產生氫氣的電漿。從開始氫氣之供給後經過預定時間之後,開始製程ST13之執行。氫氣之供給持續至製程ST13結束時為止。將氫氣供至內部空間12s時,亦可將載體氣體供至內部空間12s。
在製程ST13,在氫氣供至內部空間12s之狀態下,將第1射頻供至下部電極18(或上部電極30)。藉此,在內部空間12s中產生氫氣的電漿。在製程ST13中,亦可將第2射頻供至下部電極18。在製程ST13中,藉來自電漿之氫的活性物種、即氫之離子及/或自由基,去除前驅物中之雜質。前驅物氣體為鹵化鎢氣體時,藉前驅物中之鹵素元素與氫的反應,而從前驅物去除鹵素元素。
在製程ST13中,可將氫氣之流量設定為100sccm以上、3000sccm以下之流量。在製程ST13,可將載體氣體之流量設定為0sccm以上、3000sccm以下之流量。在製程ST13,可將內部空間12s之壓力設定為0.02Torr(2.6Pa)以上、3Torr(400Pa)以下之壓力。在製程ST13,可將第1射頻之電力設定為20W以上、3000W以下之電力。又,在製程ST13,可將第2射頻之電力設定為0W以上、200W以下之電力。
在接續之製程ST14,執行內部空間12s之驅氣。具體而言,在製程ST14,執行內部空間12s之排氣。在製程ST14,亦可將載體氣體作為驅氣氣體供至內部空間12s。藉製程ST14之執行,而將內部空間12s中之氫氣排出。
在接著之製程ST2中,判定是否滿足停止條件。停止條件係於週期CY之執行次數達到預定次數時,判定為滿足。預定次數為1次以上之次數。當在製程ST2判定為未滿足停止條件時,便再次執行週期CY。另一方面,當在製程ST2判定為滿足停止條件時,則停止製程ST1之執行。藉製程ST1之執行,而於被加工物W之表面上、特別是於遮罩MK之表面上形成鎢膜WF(參照圖5)。
在一實施形態中,可將製程ST1執行中之被加工物W的溫度設定為0℃以下之溫度。在另一實施形態,可將製程ST1執行中之被加工物W的溫度設定為-20℃以下之溫度。被加工物W之溫度可以供至流路18f之冷媒的溫度之調整控制。
當停止製程ST1之執行時,處理便移至製程ST3。在製程ST3,在腔室本體12內產生處理氣體的電漿而蝕刻含矽膜SF。處理氣體含有氟、氫及碳。處理氣體含有H2
氣體、Cx
Hy
氣體(碳化氫氣體)、及Cx
Hy
Fz
氣體(氫氟碳化物氣體)中之1種以上的氣體作為含氫氣體。又,處理氣體含有含氟氣體。含氟氣體含有HF氣體、NF3
氣體、SF6
氣體、WF6
氣體、Cx
Fy
氣體(氟碳化物氣體)及Cx
Hy
Fz
氣體中之1種以上的氣體。處理氣體含有Cx
Hy
氣體(碳化氫氣體)、及Cx
Hy
Fz
氣體(氫氟碳化物氣體)中之1種以上的氣體作為含碳氣體。在此,x、y、z為自然數。此外,處理氣體亦可更含有HBr氣體這樣的含鹵素氣體。又,再者,處理氣體亦可含有O2
氣體、CO氣體、CO2
氣體這樣的含氧氣體。在一實施形態中,處理氣體為含有氫氣、氫氟碳化物氣體及含氟氣體之混合氣體。
在製程ST3,在處理氣體供至內部空間12s之狀態下,將第1射頻供至下部電極18(或上部電極30)。藉此,在內部空間12s中產生處理氣體之電漿。在製程ST3,將第2射頻供至下部電極18。在製程ST3,以來自電漿之氟的活性物種在含矽膜SF從遮罩MK露出之處蝕刻。結果,於含矽膜SF形成開口OP(參照圖6)。
在製程ST3,可將內部空間12s之壓力設定為0.005Torr(0.7Pa)以上、0.1Torr(13.3Pa)以下之壓力。在製程ST3,可將第1射頻之電力設定為500W以上、6000W以下之電力。又,在製程ST3,可將第2射頻之電力設定為0W以上、15000W以下之電力。
在一實施形態之製程ST3中,將被加工物W之溫度設定為與製程ST1執行中之被加工物W的溫度大約相同之溫度。在一實施形態中,將製程ST3執行中之被加工物W的溫度設定為0℃以下之溫度。在另一實施形態,將製程ST3執行中之被加工物W的溫度設定為-20℃以下之溫度。被加工物W之溫度以供至流路18f之冷媒的溫度之調整控制。
在接續之製程ST4,判定是否結束方法MT之執行。在製程ST4,當包含製程ST1與製程ST3之週期的執行次數達到預定次數時,便判定為應結束方法MT。預定次數為1次以上之次數。在製程ST4判定為不結束方法MT之執行時,則再次執行包含製程ST1及製程ST3之週期。另一方面,當方法MT之執行結束時,被加工物W形成為例如圖7所示之狀態。在圖7所示之狀態,於含矽膜SF形成有延伸至基底層UL之表面的開口OP。此外,在圖7中,省略了鎢膜WF。
在方法MT,如上述,於遮罩MK上形成鎢膜WF。因而,於製程ST3之蝕刻中,遮罩MK以抗蝕刻性比含碳物質優異之材料保護。然而,在不使用電漿之原子層沉積法所行之鎢膜的形成中,為使用以去除前驅物中之雜質的反應產生,通常將被加工物之溫度設定為250℃以上之溫度。另一方面,在方法MT,由於以來自氫氣的電漿之氫的活性物種去除前驅物中之雜質而形成鎢膜WF,故可將製程ST1執行中之被加工物W的溫度設定為低溫。在此,被加工物W之溫度越低,含矽膜SF之蝕刻速率越高。因而,在方法MT中,藉將製程ST1執行中之被加工物的溫度與製程ST3執行中之被加工物的溫度設定為較低之溫度,可使製程ST1執行中之被加工物的溫度與製程ST3執行中之被加工物的溫度之差少。是故,在製程ST1與製程ST3之間,不需變更被加工物W之溫度,或可使變更被加工物W之溫度的時間短。結果,可提高包含鎢膜WF之形成及含矽膜SF之蝕刻的程序之生產量。
在一實施形態中,執行包含製程ST1與製程ST3之週期複數次。即,交互執行製程ST1與製程ST3。根據此實施形態,可一面將鎢補充至遮罩MK上,一面使含矽膜SF之蝕刻進行。又,當隨著含矽膜SF之蝕刻的進行,遮罩MK之膜厚減少時,亦可於遮罩MK之正下方的含矽膜SF之側壁面上形成鎢膜WF。結果,可抑制遮罩MK正下方之含矽膜SF的橫向蝕刻。
以上,就各種實施形態作了說明,不限上述實施形態,可構成各種變形態樣。舉例而言,方法MT亦可使用感應耦合型電漿處理裝置、以稱為微波之表面波產生電漿之電漿處理裝置這樣的任意之電漿處理裝置執行。又,含矽膜SF亦可僅由單一矽氧化膜構成。
以下,就為評估方法MT而進行之實驗作說明。此外,本揭示之內容並不限以下說明之實驗。
(第1實驗)
在第1實驗中,蝕刻了複數之樣品的矽氧化膜。在第1實驗中,將複數之樣品的矽氧化膜蝕刻時之溫度設定為彼此不同之溫度。各樣品具有基底層及以一樣之膜厚形成於該基底層之平坦的表面上之矽氧化膜。矽氧化膜之蝕刻使用電漿處理裝置10。於以下顯示第1實驗之蝕刻的條件。 <第1實驗之蝕刻的條件> 內部空間12s之壓力:25mTorr(3,333Pa) 第1射頻:100MHz、2.3kW 第2射頻:3MHz、1kW 處理氣體:H2
氣體、CF4
氣體、CH2
F2
氣體及NF3
氣體之混合氣體
在第1實驗中,對各樣品,從蝕刻時間與矽氧化膜之膜厚的減少量求出矽氧化膜之蝕刻速率。接著,求出矽氧化膜之蝕刻時的溫度與矽氧化膜之蝕刻速率的關係。於圖8顯示第1實驗之結果。在圖8,橫軸顯示樣品之溫度,縱軸顯示蝕刻速率。如圖8所示,矽氧化膜之蝕刻速率於樣品之溫度為0℃以下之溫度時,相當大。又,樣品之溫度越低,矽氧化膜之蝕刻速率越高。根據此第1實驗,確認了藉將被加工物之溫度設定為0℃以下之溫度,可獲得含矽膜之高蝕刻速率。又,確認了被加工物之溫度越低,含矽膜之蝕刻速率越高。
(第2實驗)
在第2實驗中,藉執行製程ST1,而於複數之樣品上形成了鎢膜WF。在第2實驗中,將執行製程ST1時的複數之樣品之溫度設定為彼此不同之溫度。各樣品具有基底層及設於該基底層上之遮罩EMK。遮罩EMK為非晶碳製遮罩,具有線寬線距圖形。製程ST1之執行使用電漿處理裝置10。於以下顯示第2實驗之製程ST1。 <第2實驗之製程ST1的條件> 製程ST11 內部空間12s之壓力:800mTorr (107Pa) WF6
氣體之流量:170sccm 載體氣體(Ar氣體)之流量:600sccm 處理時間:10秒 製程ST12 內部空間12s之壓力:800mTorr (107Pa) 載體氣體(Ar氣體)之流量:800sccm 處理時間:30秒 製程ST13 內部空間12s之壓力:800mTorr (107Pa) H2
氣體之流量:500sccm 載體氣體(Ar氣體)之流量:600sccm 第1射頻:100MHz、500W 第2射頻:0W 處理時間:3秒 製程ST14 內部空間12s之壓力:800mTorr (107Pa) 載體氣體(Ar氣體)之流量:800sccm 處理時間:30秒 週期CY之執行次數:30次
圖9係顯示在第2實驗測定之尺寸的圖。在第2實驗中,分別求出形成於各樣品上之鎢膜WF的膜厚FTa、FTb、FTc、FTd。膜厚FTa係在遮罩EMK之上面上的鎢膜WF之膜厚。膜厚FTb係在包含遮罩EMK之上面的橫截面上之鎢膜WF的橫向膜厚。膜厚FTc係在以遮罩EMK及鎢膜WF提供之空間MS的寬度為最小之橫截面上的鎢膜WF之橫向膜厚。膜厚FTd係在從遮罩EMK之上面往下方具有150nm之距離的橫截面上之鎢膜WF的膜厚。於圖10顯示第2實驗之結果。在圖10,橫軸顯示製程ST1執行時之樣品的溫度,縱軸顯示鎢膜之膜厚。如圖10所示,根據製程ST1,確認了樣品之溫度為20℃以下的溫度時,可於遮罩EMK上形成鎢膜。即,根據製程ST1,確認了在被加工物之溫度設定為遠比以不利用電漿之原子層沉積法形成鎢膜時之被加工物溫度(通常為250℃以上)低的溫度之狀態下,可於該被加工物上形成鎢膜。又,確認了在被加工物之溫度設定為-20℃以下之溫度的狀態下,可形成具有大膜厚之鎢膜。以上說明之第1實驗及第2實驗的結果,確認了方法MT之製程ST1及製程ST3執行時的被加工物W之溫度以0℃以下為佳,以-20℃以下為更佳。
10‧‧‧電漿處理裝置12‧‧‧腔室本體12e‧‧‧排氣口12g‧‧‧閘閥12p‧‧‧通路12s‧‧‧內部空間13‧‧‧支撐部14‧‧‧台16‧‧‧電極板18‧‧‧下部電極18f‧‧‧流路20‧‧‧靜電吸盤22‧‧‧直流電源26‧‧‧冷卻單元26a‧‧‧配管26b‧‧‧配管28‧‧‧氣體供給管路30‧‧‧上部電極32‧‧‧構件34‧‧‧頂板34a‧‧‧氣體吐出孔36‧‧‧支撐體36a‧‧‧氣體擴散室36b‧‧‧氣體流通孔36c‧‧‧氣體導入口38‧‧‧氣體供給管40‧‧‧氣體源群42‧‧‧閥群44‧‧‧流量控制器群46‧‧‧屏蔽件48‧‧‧擋板50‧‧‧排氣裝置52‧‧‧排氣管62‧‧‧第1射頻電源64‧‧‧第2射頻電源66‧‧‧匹配器68‧‧‧匹配器70‧‧‧直流電源部Cnt‧‧‧控制部CY‧‧‧週期EMK‧‧‧遮罩F1‧‧‧第1膜F2‧‧‧第2膜FR‧‧‧對焦環FTa‧‧‧膜厚FTb‧‧‧膜厚FTc‧‧‧膜厚FTb‧‧‧膜厚MK‧‧‧遮罩MT‧‧‧方法OM‧‧‧開口OP‧‧‧開口SF‧‧‧含矽膜ST1‧‧‧製程ST2‧‧‧製程ST3‧‧‧製程ST4‧‧‧製程ST11‧‧‧製程ST12‧‧‧製程ST13‧‧‧製程ST14‧‧‧製程UL‧‧‧基底層W‧‧‧被加工物WF‧‧‧鎢膜
圖1係顯示一實施形態之蝕刻方法的流程圖。 圖2係可應用圖1所示之蝕刻方法的一例之被加工物的部分放大截面圖。 圖3係例示可用於圖1所示之蝕刻方法的執行之電漿處理裝置的圖。 圖4係圖1所示之蝕刻方法的製程ST1之隨時間變化圖。 圖5係在圖1所示之蝕刻方法執行中於其上形成有鎢膜之狀態的被加工物之部分放大截面圖。 圖6係在圖1所示之蝕刻方法執行中含矽膜部分被蝕刻之狀態的被加工物之部分放大截面圖。 圖7係應用圖1所示之蝕刻方法後的狀態之被加工物的部分放大截面圖。 圖8係顯示第1實驗之結果的曲線圖。 圖9係顯示在第2實驗測定之尺寸的圖。 圖10係顯示第2實驗之結果的曲線圖。
CY‧‧‧週期
MT‧‧‧方法
ST1‧‧‧製程
ST2‧‧‧製程
ST3‧‧‧製程
ST4‧‧‧製程
ST11‧‧‧製程
ST12‧‧‧製程
ST13‧‧‧製程
ST14‧‧‧製程
Claims (7)
- 一種蝕刻方法,其係單一之矽氧化膜、或包含交互疊層的複數之矽氧化膜及複數之矽氮化膜在內的含矽膜之蝕刻方法,該蝕刻方法係在具有該含矽膜之被加工物配置於電漿處理裝置之腔室本體內的狀態下執行,該被加工物更具有設於該含矽膜上之遮罩,該遮罩含有碳,並於該遮罩形成有開口,該蝕刻方法包含下列製程:於該被加工物上形成鎢膜;及蝕刻該含矽膜;形成鎢膜之該製程包含下列製程:將含有鎢之前驅物氣體供至該被加工物以使含有鎢之前驅物沉積於該被加工物上;及產生氫氣的電漿以將氫之活性物種供至該被加工物上之該前驅物;在蝕刻該含矽膜之該製程中,在該腔室本體內產生含有氟、氫及碳之處理氣體的電漿以蝕刻該含矽膜。
- 如申請專利範圍第1項之蝕刻方法,其中,交互反覆進行形成鎢膜之該製程與蝕刻該含矽膜之該製程。
- 如申請專利範圍第1項或第2項之蝕刻方法,其中, 在形成鎢膜之該製程中,交互反覆進行供給前驅物氣體之該製程與產生氫氣的電漿之該製程。
- 如申請專利範圍第1項或第2項之蝕刻方法,其中,在形成鎢膜之該製程及蝕刻該含矽膜之該製程,將該被加工物之溫度設定為0℃以下之溫度。
- 如申請專利範圍第4項之蝕刻方法,其中,在形成鎢膜之該製程及蝕刻該含矽膜之該製程,將該被加工物之溫度設定為-20℃以下之溫度。
- 如申請專利範圍第1項或第2項之蝕刻方法,其中,該前驅物氣體係鹵化鎢氣體。
- 如申請專利範圍第6項之蝕刻方法,其中,該前驅物氣體係六氟化鎢氣體。
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