JP2019117876A - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP2019117876A JP2019117876A JP2017251560A JP2017251560A JP2019117876A JP 2019117876 A JP2019117876 A JP 2019117876A JP 2017251560 A JP2017251560 A JP 2017251560A JP 2017251560 A JP2017251560 A JP 2017251560A JP 2019117876 A JP2019117876 A JP 2019117876A
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- gas
- flow rate
- plasma
- fluorine
- fluorocarbon
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- 238000000034 method Methods 0.000 title claims abstract description 149
- 238000005530 etching Methods 0.000 title claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 279
- 230000008569 process Effects 0.000 claims abstract description 99
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 38
- 239000011737 fluorine Substances 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 31
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 37
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 67
- 238000002474 experimental method Methods 0.000 description 54
- 230000000052 comparative effect Effects 0.000 description 28
- 238000001020 plasma etching Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
Description
工程ST1
C4F6ガス:87sccm
C4F8ガス:17sccm
O2ガス:47sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
工程ST2
C4F6ガス:17sccm
C4F8ガス:87sccm
O2ガス:87sccm
NF3ガス:5sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
工程ST1
C4F6ガス:87sccm
CHF3ガス:34sccm
O2ガス:47sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
工程ST2
C4F6ガス:17sccm
CHF3ガス:174sccm
O2ガス:87sccm
NF3ガス:5sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
第1工程
C4F6ガス:87sccm
C4F8ガス:17sccm
O2ガス:47sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
第2工程
C4F6ガス:17sccm
C4F8ガス:87sccm
O2ガス:47sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
第1工程
C4F6ガス:87sccm
C4F8ガス:17sccm
O2ガス:47sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
第2工程
C4F6ガス:17sccm
C4F8ガス:87sccm
O2ガス:87sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:60秒
工程ST1
C4F6ガス:97sccm
C4F8ガス:7sccm
O2ガス:27sccm
NF3ガス:35sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:5秒
工程ST2
C4F6ガス:27sccm
C4F8ガス:77sccm
O2ガス:67sccm
NF3ガス:5sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:5秒
工程ST1と工程ST2の交互の繰り返しの回数:9回
第1工程
C4F6ガス:77sccm
C4F8ガス:27sccm
O2ガス:47sccm
NF3ガス:5sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:5秒
工程ST2
C4F6ガス:27sccm
C4F8ガス:77sccm
O2ガス:47sccm
NF3ガス:5sccm
内部空間10sの中の圧力:1.33Pa(10mTorr)
第1の高周波:40MHz、1500W
第2の高周波:400kHz、14000W
処理時間:5秒
第1工程と第2工程の交互の繰り返しの回数:9回
Claims (8)
- 基板の膜のエッチング方法であり、該基板は、パターンを有するマスクを前記膜上に有しており、該エッチング方法は、プラズマ処理装置のチャンバ内に前記基板が配置された状態で実行され、
前記膜をエッチングするために、前記チャンバ内で、第1のフルオロカーボンを含む第1のガス、第2のフルオロカーボンを含む第2のガス、酸素含有ガス、及びフッ素含有ガスを含む第1の処理ガスのプラズマを生成する工程と、
前記膜をエッチングするために、前記チャンバ内で、前記第1のガス、前記第2のガス、前記酸素含有ガス、及び前記フッ素含有ガスを含む第2の処理ガスのプラズマを生成する工程と、
を含み、
第1の処理ガスのプラズマを生成する前記工程と第2の処理ガスのプラズマを生成する前記工程は、交互に実行され、
前記第2のフルオロカーボンの分子中の炭素原子の数に対するフッ素原子の数の比の値は、前記第1のフルオロカーボンの分子中の炭素原子の数に対するフッ素原子の数の比の値よりも大きく、
前記第1の処理ガスにおける前記第1のガスの流量は、前記第2の処理ガスにおける前記第1のガスの流量よりも多く、
前記第2の処理ガスにおける前記第2のガスの流量は、前記第1の処理ガスにおける前記第2のガスの流量よりも多く、
前記第2の処理ガスにおける前記酸素含有ガスの流量は、前記第1の処理ガスにおける前記酸素含有ガスの流量よりも多く、
前記第2の処理ガスにおける前記フッ素含有ガスの流量は、前記第1の処理ガスにおける前記フッ素含有ガスの流量よりも少ない、
エッチング方法。 - 第1の処理ガスのプラズマを生成する前記工程と第2の処理ガスのプラズマを生成する前記工程にわたって、前記第1の処理ガスのプラズマ及び前記第2の処理ガスのプラズマを生成するための高周波が連続的に供給される、請求項1に記載のエッチング方法。
- 前記第1の処理ガスにおける前記第1のガスの流量は、前記第1の処理ガスにおける前記第2のガスの流量よりも多く、
前記第2の処理ガスにおける前記第2のガスの流量は、前記第2の処理ガスにおける前記第1のガスの流量よりも多い、
請求項1又は2に記載のエッチング方法。 - 前記第1のフルオロカーボンは、パーフルオロカーボン又はハイドロフルオロカーボンであり、
前記第2のフルオロカーボンは、パーフルオロカーボン又はハイドロフルオロカーボンである、
請求項1〜3の何れか一項に記載のエッチング方法。 - 前記第1のフルオロカーボンは、C4F6である、請求項4に記載のエッチング方法。
- 前記第2のフルオロカーボンは、C4F8である、請求項4又は5に記載のエッチング方法。
- 前記酸素含有ガスは、酸素ガスである、請求項1〜6の何れか一項に記載のエッチング方法。
- 前記フッ素含有ガスは、NF3ガスである、請求項1〜7の何れか一項に記載のエッチング方法。
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