JP2021077709A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 60
- 239000007789 gas Substances 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 238000009832 plasma treatment Methods 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000007547 defect Effects 0.000 abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- -1 oxygen ion Chemical class 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Abstract
【解決手段】有機膜上に、シリコン含有膜で形成され開口部を有するマスクを通じて、前記有機膜をエッチングする、プラズマ処理方法であって、前記マスクの形状を修復する工程を有し、前記マスクの形状を修復する工程は、前記マスクの開口部の側壁を改質する工程と、前記マスクの上面をエッチングする工程と、を含む、プラズマ処理方法。
【選択図】図4
Description
圧力:10〜50mTorr
第1の高周波電力:1000〜5000W
第2の高周波電力:50〜500W
基板温度:−10〜20℃
圧力:10〜50mTorr
第1の高周波電力:1000〜2000W
第2の高周波電力:50〜500W
ガス流量比(第2の処理ガス/第1の処理ガス):0.11〜2
基板温度:−10〜20℃
圧力:10〜50mTorr
第1の高周波電力:1000〜5000W
第2の高周波電力:50〜500W
基板温度:−10〜20℃
10 チャンバ
10s 内部空間
14 支持台(載置台)
18 下部電極(プラズマ生成部)
30 上部電極(プラズマ生成部)
40 ガスソース群(ガス供給部)
62 第1の高周波電源(プラズマ生成部)
64 第2の高周波電源(プラズマ生成部)
80 制御部
100 下層膜
110 有機膜
111 開口部
120 シリコン含有膜
121 開口部
122 傾斜部
123 酸化膜
124 改質膜
W 基板
Claims (18)
- 有機膜上に、シリコン含有膜で形成され開口部を有するマスクを通じて、前記有機膜をエッチングする、プラズマ処理方法であって、
前記マスクの形状を修復する工程を有し、
前記マスクの形状を修復する工程は、
前記マスクの開口部の側壁を改質する工程と、
前記マスクの上面をエッチングする工程と、を含む、プラズマ処理方法。 - 前記マスクの開口部の側壁を改質する工程は、
前記マスクの開口部の側壁をSiCに改質する、
請求項1に記載のプラズマ処理方法。 - 前記マスクの開口部の側壁を改質する工程は、
水素含有ガスを含む第1の処理ガスでプラズマ処理する、
請求項2に記載のプラズマ処理方法。 - 前記マスクの開口部の側壁を改質する工程は、
前記第1の処理ガスのプラズマで前記有機膜をエッチングして、該エッチングの反応生成物を用いて前記側壁を改質する、
請求項3に記載のプラズマ処理方法。 - 前記マスクの上面をエッチングする工程において、
前記マスクの開口部の側壁を改質する工程によって生成されるSiCのエッチングレートは、前記シリコン含有膜のエッチングレートよりも低い、
請求項2乃至請求項4のいずれか1項に記載のプラズマ処理方法。 - 前記マスクの上面をエッチングする工程は、
ハロゲン含有ガスを含む第2の処理ガスでプラズマ処理する、
請求項5に記載のプラズマ処理方法。 - 前記第2の処理ガスは、水素含有ガスを含む、
請求項6に記載のプラズマ処理方法。 - 前記マスクの上面をエッチングする工程は、
ハロゲン含有ガスを含む第2の処理ガスでプラズマ処理する、
請求項7に記載のプラズマ処理方法。 - 前記マスクの開口部の側壁を改質する工程と前記マスクの上面をエッチングする工程とを、同時に行う、
請求項1乃至請求項8のいずれか1項に記載のプラズマ処理方法。 - 前記マスクの上面をエッチングする工程は、前記マスクの開口部の側壁を改質する工程の後に行う、
請求項1乃至請求項8のいずれか1項に記載のプラズマ処理方法。 - 前記マスクの形状を修復する工程の後に、
酸素を含む第3の処理ガスのプラズマによって、前記有機膜をエッチングする工程を含む、
請求項1乃至請求項10のいずれか1項に記載のプラズマ処理方法。 - 前記マスクの形状を修復する工程と前記有機膜をエッチングする工程とを、少なくとも1回以上繰り返す、
請求項11に記載のプラズマ処理方法。 - 前記マスクの形状を修復する工程の前に、
酸素を含む第4の処理ガスのプラズマによって、前記マスクの表面を酸化させる工程を含む、
請求項11または請求項12に記載のプラズマ処理方法。 - 前記第3の処理ガスと前記第4の処理ガスは同じガスを用いる、
請求項13に記載のプラズマ処理方法。 - 前記第3の処理ガスと前記第4の処理ガスは異なるガスを用いる、
請求項13に記載のプラズマ処理方法。 - 前記マスクの表面を酸化させる工程は、
前記第4の処理ガスのプラズマによって、前記有機膜をエッチングする、
請求項13乃至請求項15のいずれか1項に記載のプラズマ処理方法。 - 前記マスクの表面を酸化させる工程は、
前記第4の処理ガスのプラズマによって、前記有機膜をエッチングするとともに、前記マスクの開口部の肩部を消耗させる、
請求項16に記載のプラズマ処理方法。 - 有機膜上にシリコン含有膜で形成され開口部を有するマスクが配された基板を載置する載置台と、
前記載置台を収容するチャンバと、
前記チャンバ内に処理ガスを供給するガス供給部と、
前記チャンバ内にプラズマを生成するプラズマ生成部と、
制御部と、を備え、
前記制御部は、
前記有機膜をエッチング工程と、
前記マスクの形状を修復する工程とを実行可能に構成され、
前記マスクの形状を修復する工程は、
前記マスクの開口部の側壁を改質する工程と、
前記マスクの上面をエッチングする工程と、を含む、プラズマ処理装置。
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JP2019201668A JP7321059B2 (ja) | 2019-11-06 | 2019-11-06 | プラズマ処理方法及びプラズマ処理装置 |
TW109137527A TWI843909B (zh) | 2019-11-06 | 2020-10-29 | 電漿處理方法及電漿處理設備 |
US17/084,792 US11380547B2 (en) | 2019-11-06 | 2020-10-30 | Plasma processing method and plasma processing apparatus |
CN202011217178.3A CN112786442A (zh) | 2019-11-06 | 2020-11-04 | 等离子体处理方法及等离子体处理装置 |
KR1020200146921A KR20210055015A (ko) | 2019-11-06 | 2020-11-05 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
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