JP2016207772A - 有機膜をエッチングする方法 - Google Patents
有機膜をエッチングする方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 238000005530 etching Methods 0.000 title claims description 28
- 238000012545 processing Methods 0.000 claims abstract description 96
- 239000007789 gas Substances 0.000 claims abstract description 94
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 17
- 150000002430 hydrocarbons Chemical class 0.000 claims description 17
- 239000004215 Carbon black (E152) Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 11
- 239000007795 chemical reaction product Substances 0.000 description 17
- 239000003507 refrigerant Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 hydrogen radicals Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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Abstract
【解決手段】
一実施形態の方法では、被処理体を収容したプラズマ処理装置の処理容器内において水素ガス及び窒素ガスを含む処理ガスのプラズマが生成される。処理ガスのプラズマの生成によって、ハードマスクから露出されている有機膜の一部領域が変質領域に変化する。次いで、処理容器内において希ガスのプラズマが生成される。希ガスのプラズマにより、変質領域が除去され、該変質領域から放出される物質がハードマスクの表面上に堆積する。この方法では、処理ガスのプラズマの生成と希ガスのプラズマの生成が交互に繰り返される。
【選択図】図1
Description
<条件>
・処理容器12内の圧力:100mTorr(13.33Pa)
・第1の高周波電源62の高周波のパワー:1500W
・第2の高周波電源64の高周波バイアスのパワー:1200W
<条件>
・工程ST1の処理容器12内の圧力:50mTorr(6.666Pa)
・工程ST1の水素ガスの流量:100sccm
・工程ST1の窒素ガスの流量:200sccm
・工程ST1における第1の高周波電源62の高周波のパワー:200W
・工程ST1における第2の高周波電源64の高周波バイアスのパワー:0W
・工程ST1の実行時間:12秒
・工程ST2の処理容器12内の圧力:50mTorr(6.666Pa)
・工程ST2のArガスの流量:300sccm
・工程ST2における第1の高周波電源62の高周波のパワー:100W
・工程ST2の実行時間:6秒
Claims (5)
- 被処理体の有機膜をエッチングする方法であって、該被処理体は、該有機膜上にハードマスクを有し、該方法は、
前記被処理体を収容したプラズマ処理装置の処理容器内において水素ガス及び窒素ガスを含む処理ガスのプラズマを生成する工程であり、前記ハードマスクから露出されている前記有機膜の一部領域を変質領域に変化させる、該工程と、
前記処理容器内において希ガスのプラズマを生成する工程であり、前記変質領域を除去し、且つ、該変質領域から放出される物質を前記ハードマスクの表面上に堆積させる、該工程と、
を含み、処理ガスのプラズマを生成する前記工程と希ガスのプラズマを生成する前記工程とが交互に繰り返される、方法。 - 前記処理容器内において、前記被処理体は、下部電極を含む載置台上に載置されており、
希ガスのプラズマを生成する前記工程では、前記下部電極に供給される高周波バイアスの単位面積当りのパワーが、0.028W/cm2以下のパワーに設定される、
請求項1に記載の方法。 - 処理ガスのプラズマを生成する前記工程では、前記下部電極に高周波バイアスが供給されない、請求項2に記載の方法。
- 前記処理ガス中の前記水素ガスの流量:前記処理ガス中の前記窒素ガスの流量で表される流量比が、1:3〜9:1の範囲内の流量比に設定される、請求項1〜3の何れか一項に記載の方法。
- 前記処理容器内において炭化水素ガスのプラズマを生成する工程を更に含む、請求項1〜4の何れか一項に記載の方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015085886A JP6438831B2 (ja) | 2015-04-20 | 2015-04-20 | 有機膜をエッチングする方法 |
KR1020160044063A KR102390726B1 (ko) | 2015-04-20 | 2016-04-11 | 유기막을 에칭하는 방법 |
EP16165061.9A EP3086356B1 (en) | 2015-04-20 | 2016-04-13 | Method for etching organic film |
US15/098,434 US9735027B2 (en) | 2015-04-20 | 2016-04-14 | Method for etching organic film |
TW105111967A TWI686863B (zh) | 2015-04-20 | 2016-04-18 | 蝕刻有機膜之方法 |
CN201610247871.2A CN106067417B (zh) | 2015-04-20 | 2016-04-20 | 蚀刻有机膜的方法 |
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JP2015085886A JP6438831B2 (ja) | 2015-04-20 | 2015-04-20 | 有機膜をエッチングする方法 |
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JP2016207772A true JP2016207772A (ja) | 2016-12-08 |
JP6438831B2 JP6438831B2 (ja) | 2018-12-19 |
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US (1) | US9735027B2 (ja) |
EP (1) | EP3086356B1 (ja) |
JP (1) | JP6438831B2 (ja) |
KR (1) | KR102390726B1 (ja) |
CN (1) | CN106067417B (ja) |
TW (1) | TWI686863B (ja) |
Cited By (4)
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JP2020096142A (ja) * | 2018-12-14 | 2020-06-18 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP2020145404A (ja) * | 2019-02-28 | 2020-09-10 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP2021077709A (ja) * | 2019-11-06 | 2021-05-20 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
TWI843909B (zh) | 2019-11-06 | 2024-06-01 | 日商東京威力科創股份有限公司 | 電漿處理方法及電漿處理設備 |
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JP6239365B2 (ja) * | 2013-12-11 | 2017-11-29 | 東京エレクトロン株式会社 | シリコン層をエッチングする方法 |
US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
KR102137390B1 (ko) | 2019-02-28 | 2020-07-24 | 정재성 | 차량의 카본 슬러지 제거시스템 |
US11355350B2 (en) * | 2019-12-20 | 2022-06-07 | Tokyo Electron Limited | Etching method, substrate processing apparatus, and substrate processing system |
US20210233778A1 (en) * | 2020-01-29 | 2021-07-29 | Tokyo Electron Limited | Etching method, substrate processing apparatus, and substrate processing system |
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- 2016-04-14 US US15/098,434 patent/US9735027B2/en active Active
- 2016-04-18 TW TW105111967A patent/TWI686863B/zh active
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JP2020096142A (ja) * | 2018-12-14 | 2020-06-18 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
US11557485B2 (en) | 2018-12-14 | 2023-01-17 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
JP7229750B2 (ja) | 2018-12-14 | 2023-02-28 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP7418632B2 (ja) | 2018-12-14 | 2024-01-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2020145404A (ja) * | 2019-02-28 | 2020-09-10 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7390165B2 (ja) | 2019-02-28 | 2023-12-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP2021077709A (ja) * | 2019-11-06 | 2021-05-20 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7321059B2 (ja) | 2019-11-06 | 2023-08-04 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
TWI843909B (zh) | 2019-11-06 | 2024-06-01 | 日商東京威力科創股份有限公司 | 電漿處理方法及電漿處理設備 |
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KR20160124670A (ko) | 2016-10-28 |
EP3086356A1 (en) | 2016-10-26 |
TWI686863B (zh) | 2020-03-01 |
US20160307775A1 (en) | 2016-10-20 |
KR102390726B1 (ko) | 2022-04-26 |
JP6438831B2 (ja) | 2018-12-19 |
US9735027B2 (en) | 2017-08-15 |
EP3086356B1 (en) | 2017-11-08 |
CN106067417B (zh) | 2019-09-03 |
TW201705273A (zh) | 2017-02-01 |
CN106067417A (zh) | 2016-11-02 |
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