JP2018133483A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
まず、本発明の一実施形態に係るプラズマ処理装置10の全体構成について、図1を参照しながら説明する。図1は、本発明の一実施形態に係るプラズマ処理装置10の全体構成を示す。本実施形態では、プラズマ処理装置10の一例として容量結合型プラズマエッチング装置を挙げる。
次に、上記構成のプラズマ処理装置10にて行われるコーティング工程を含むプラズマ処理の一例について、図2及び図3を参照しながら説明する。図2は、本実施形態に係るコーティング工程を含むプラズマ処理の一例を示すフローチャートである。図3は、本実施形態に係るSAC(Self Aligned Contact)プロセスの断面の一例を示す。
<コーティング工程:コーティング条件>
チャンバ内圧力:40mTorr(5.33Pa)
プラズマ生成用の高周波電力HF:1000W
バイアス引き込み用の高周波電力LF:1000W
処理ガス:
CH4ガス:45sccm〜55sccm
Arガス:450sccm〜550sccm
以上の条件から、コーティング工程において、Arガスに対するCH4ガスの比率は、0.09〜0.11の範囲内である。
<エッチング工程:堆積条件>
チャンバ内圧力:30mTorr(4.00Pa)
プラズマ生成用の高周波電力HF:100W
バイアス引き込み用の高周波電力LF:350W
処理ガス:
C4F6ガス:8.46sccm〜10.34sccm
Arガス:1350sccm〜1650sccm
O2ガス:7.2sccm〜8.8sccm
次に、制御部100は、不活性ガスを供給する(ステップS30)。不活性ガスとしては、例えばArガスが供給される。
<エッチング工程:エッチング条件>
チャンバ内圧力:30mTorr(4.00Pa)
プラズマ生成用の高周波電力HF:100W
バイアス引き込み用の高周波電力LF:350W
処理ガス:
Arガス:1350sccm〜1650sccm
なお、ステップS28の堆積工程からステップS32のエッチング工程へ移行する間、プラズマは消火されず、生成され続ける。
図4は、上記コーティング条件で行った本実施形態に係るコーティング処理によるデポレート(nm/min)の一例を示す。まず、中央部のインナーセル(C)81C、最外周部のインナーセル(E)81E及びその間のインナーセル(M)81Mの成膜レート(Depo Rate:1分当たりに堆積するカーボン量)についての実験結果について説明する。
次に、ゲート電極140の消耗の抑制とエッチング特性の両立について、図5を参照しながら説明する。図5の左側は、比較例に係るコーティング工程を行っていない場合のエッチング工程後のSACプロセスの結果の一例を示す。図5の右側は、本実施形態に係るコーティング工程を行った場合のエッチング工程後のSACプロセスの結果の一例を示す。
最後に図2の変形例について簡単に説明する。図6は、本実施形態の変形例に係るコーティング工程を含むプラズマ処理の一例を示すフローチャートである。図2のプラズマ処理と同じ処理内容のステップには、同じ番号を付している。
また、例えば、本発明は、図1の平行平板型2周波印加装置だけでなく、その他のプラズマ処理装置に適用可能である。その他のプラズマ処理装置としては、容量結合型プラズマ(CCP:Capacitively Coupled Plasma)装置、誘導結合型プラズマ(ICP:Inductively Coupled Plasma)処理装置、ラジアルラインスロットアンテナを用いたプラズマ処理装置、ヘリコン波励起型プラズマ(HWP:Helicon Wave Plasma)装置、電子サイクロトロン共鳴プラズマ(ECR:Electron Cyclotron Resonance Plasma)装置、表面波プラズマ処理装置等であってもよい。ただし、上部電極に高周波電力HF又はマイクロ波電力が印加される。
18a:第1プレート
18b:第2プレート
12:チャンバ
22:直流電源
24:冷媒流路
30:上部電極
34:電極板
34a:ガス孔
36:電極支持体
40:ガス供給部
50:排気装置
62:第1の高周波電源
64:第2の高周波電源
81:インナーセル
82:アウターセル
83:グランドリング
84:石英リング
85:シリコンリング
86:カバーリング
87:フォーカスリング
100:制御部
110:レジスト
120:SiO2膜
130:Si3N4膜
140:ゲート電極
150:シリコン基板
PD:載置台
LE:下部電極
ESC:静電チャック
Claims (10)
- チャンバの上部電極に高周波電力を印加する工程と、
前記チャンバの内部にカーボン含有ガスを含むガスを供給し、生成されるプラズマにより該チャンバの内部をカーボン膜によってコーティングするコーティング工程と、
前記コーティング工程の後に、前記チャンバの内部にフルオロカーボン含有ガスを含むガスを供給し、生成されるプラズマにより被処理体に形成された電極を覆う第2のシリコン含有膜の上の第1のシリコン含有膜をエッチングするエッチング工程と、
を有するプラズマ処理方法。 - 前記コーティング工程の前に、前記チャンバの内部に酸素含有ガスを供給し、生成されるプラズマにより該チャンバの内部をクリーニングするクリーニング工程、
を有する請求項1に記載のプラズマ処理方法。 - 前記コーティング工程にて供給するカーボン含有ガスを含むガスは、ハイドロカーボンガス、ハイドロフルオロカーボンガス又はフルオロカーボンガスの少なくともいずれかを含む、
請求項1又は2に記載のプラズマ処理方法。 - 前記カーボン含有ガスを含むガスは、CH4ガス、CH3Fガス、C4F6ガス、C5F8ガス又はC6F6ガスの少なくともいずれかを含む、
請求項3に記載のプラズマ処理方法。 - 前記カーボン含有ガスを含むガスは、CH4ガスと不活性ガスとの混合ガスであり、
前記不活性ガスに対するCH4ガスの比率は、0.09〜0.11である、
請求項1〜4のいずれか一項に記載のプラズマ処理方法。 - 前記第1のシリコン含有膜は、酸化ケイ素含有膜であり、
前記第2のシリコン含有膜は、窒化ケイ素含有膜である、
請求項1〜5のいずれか一項に記載のプラズマ処理方法。 - 前記チャンバの内部の部材の少なくとも一部は、シリコンを含有する、
請求項1〜6のいずれか一項に記載のプラズマ処理方法。 - 前記エッチング工程は、
前記フルオロカーボン含有ガスを含むガスを供給し、生成されるプラズマにより前記カーボン膜から叩き出されたカーボンを含む堆積物を堆積させた後に、不活性ガスを供給し、生成されるプラズマにより前記堆積物に含まれるカーボンとフルオロカーボンのラジカルを反応させてエッチングする、
請求項1〜7のいずれか一項に記載のプラズマ処理方法。 - 前記エッチング工程は、
前記フルオロカーボン含有ガスを含むガスを供給する工程と、前記不活性ガスを供給する工程とを所定回数繰り返す、
請求項8に記載のプラズマ処理方法。 - ガスを供給するガス供給部と、高周波電力を供給する高周波電力部と、前記高周波電力により前記ガスから生成されるプラズマにより行う処理を制御する制御部と、を有するプラズマ処理装置であって、
前記制御部は、
チャンバの上部電極に高周波電力を印加する処理と、
前記チャンバの内部にカーボン含有ガスを含むガスを供給し、生成されるプラズマにより該チャンバの内部をカーボン膜によってコーティングするコーティング処理と、
前記コーティング処理の後に、前記チャンバの内部にフルオロカーボン含有ガスを含むガスを供給し、生成されるプラズマにより被処理体に形成された電極を覆う第2のシリコン含有膜の上の第1のシリコン含有膜をエッチングするエッチング処理とを制御する、
プラズマ処理装置。
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