JP6339961B2 - エッチング方法 - Google Patents
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- JP6339961B2 JP6339961B2 JP2015071502A JP2015071502A JP6339961B2 JP 6339961 B2 JP6339961 B2 JP 6339961B2 JP 2015071502 A JP2015071502 A JP 2015071502A JP 2015071502 A JP2015071502 A JP 2015071502A JP 6339961 B2 JP6339961 B2 JP 6339961B2
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- 238000000034 method Methods 0.000 title claims description 73
- 238000005530 etching Methods 0.000 title claims description 43
- 239000007789 gas Substances 0.000 claims description 161
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 229930195733 hydrocarbon Natural products 0.000 claims description 19
- 150000002430 hydrocarbons Chemical class 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 claims description 14
- 239000004215 Carbon black (E152) Substances 0.000 claims description 13
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 9
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 2
- 238000010494 dissociation reaction Methods 0.000 description 11
- 230000005593 dissociations Effects 0.000 description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
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- General Chemical & Material Sciences (AREA)
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Description
Claims (8)
- 被処理体の第1領域及び第2領域を同時にエッチングする方法であって、該第1領域は、シリコン酸化膜及びシリコン窒化膜が交互に積層されることによって構成された多層膜を含み、該第2領域は、該第1領域の該シリコン酸化膜の膜厚よりも大きい膜厚を有するシリコン酸化膜を含み、該被処理体は、該第1領域及び該第2領域上に開口を提供するマスクを有し、該方法は、
前記第1領域及び前記第2領域を同時にエッチングするために、前記被処理体が準備されたプラズマ処理装置の処理容器内で、フルオロカーボンガス、及び、ハイドロフルオロカーボンガスを含む第1の処理ガスのプラズマを生成する工程と、
前記プラズマ処理装置の前記処理容器内で、水素ガス、ハイドロフルオロカーボンガス、及び窒素ガスを含む第2の処理ガスのプラズマを生成する工程と、
を含み、
第1の処理ガスのプラズマを生成する前記工程、及び第2の処理ガスのプラズマを生成する前記工程が交互に繰り返される、方法。 - 第1の処理ガスのプラズマを生成する前記工程の実行時間長が、第2の処理ガスのプラズマを生成する前記工程の実行時間長よりも長い、請求項1に記載の方法。
- 前記第2の処理ガスは三フッ化窒素ガスを更に含む、請求項1又は2に記載の方法。
- 前記第2の処理ガスは硫化カルボニルガスを更に含む、請求項1〜3の何れか一項に記載の方法。
- 前記第2の処理ガスは三塩化ホウ素ガスを更に含む、請求項1〜4の何れか一項に記載の方法。
- 前記第2の処理ガスは炭化水素ガスを更に含む、請求項1〜5の何れか一項に記載の方法。
- 前記マスクはカーボンから構成されたマスクである、請求項1〜6の何れか一項に記載の方法。
- 前記第2領域は、第1部分領域及び第2部分領域を含み、
前記第1部分領域は、前記第1領域から前記多層膜の積層方向に直交する方向に延びる複数の前記シリコン窒化膜を含み、
前記第1領域から前記第1部分領域内に延びた前記複数の前記シリコン窒化膜は、該第1部分領域内において階段状を呈するように終端しており、
前記第2部分領域は、単層のシリコン酸化膜から構成されている、
請求項1〜7の何れか一項に記載の方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071502A JP6339961B2 (ja) | 2015-03-31 | 2015-03-31 | エッチング方法 |
KR1020160035300A KR101937727B1 (ko) | 2015-03-31 | 2016-03-24 | 에칭 방법 |
US15/080,666 US9793134B2 (en) | 2015-03-31 | 2016-03-25 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071502A JP6339961B2 (ja) | 2015-03-31 | 2015-03-31 | エッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016192483A JP2016192483A (ja) | 2016-11-10 |
JP2016192483A5 JP2016192483A5 (ja) | 2018-02-22 |
JP6339961B2 true JP6339961B2 (ja) | 2018-06-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015071502A Active JP6339961B2 (ja) | 2015-03-31 | 2015-03-31 | エッチング方法 |
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Country | Link |
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US9997374B2 (en) * | 2015-12-18 | 2018-06-12 | Tokyo Electron Limited | Etching method |
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JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
US10727045B2 (en) * | 2017-09-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device |
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US20220399361A1 (en) * | 2021-06-10 | 2022-12-15 | Macronix International Co., Ltd. | Memory device and manufacturing method thereof |
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