JP6948181B2 - 多層膜をエッチングする方法 - Google Patents
多層膜をエッチングする方法 Download PDFInfo
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- 239000007789 gas Substances 0.000 claims description 200
- 238000012545 processing Methods 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 39
- 238000009832 plasma treatment Methods 0.000 claims description 31
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 25
- 229910052717 sulfur Inorganic materials 0.000 claims description 25
- 239000011593 sulfur Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 125000001153 fluoro group Chemical group F* 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 150000001721 carbon Chemical group 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 description 60
- 238000002474 experimental method Methods 0.000 description 57
- 230000008859 change Effects 0.000 description 30
- 239000012528 membrane Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
変化率(%)=(P−Q)/P×100 …(1)
式(1)において、Pは、初期のマスクにおける二つの近傍の開口IMOの重心間の距離である。Qは、これら二つの近傍の開口IMOの下方でプラズマエッチングにより多層膜MFに形成された二つの開口OPの底部における重心間の距離である。変化率の平均値、及び、3×(変化率の標準偏差)、即ち変化率の3σが小さければ、多層膜MFに形成された複数の開口OPの形状が均一であり、且つ、当該複数の開口OPの垂直性が高い。
・処理ガス:H2ガス、CH2F2ガス、H2Sガス、及び、HBrガスを含む混合ガス
・チャンバ12cの圧力:3.333Pa(25mTorr)
・静電チャック20の温度:0℃
・第1の高周波:2.5kW、40MHz、連続波
・第2の高周波:7kW、0.4MHz、連続波
・処理ガス:H2ガス、CH2F2ガス、SF6ガス、及び、HBrガスを含む混合ガス
・チャンバ12cの圧力:3.333Pa(25mTorr)
・第1の高周波:2.5kW、40MHz、連続波
・第2の高周波:7kW、0.4MHz、連続波
・多層膜MFに形成した開口OPのアスペクト比:80
・処理ガス:H2ガス、CH2F2ガス、HBrガス、及び、SF6ガスを含む混合ガス
・チャンバ12cの圧力:3.333Pa(25mTorr)
・静電チャック20の温度:−40℃
・第1の高周波:2.5kW、40MHz、連続波
・第2の高周波:7kW、0.4MHz、連続波
・多層膜MFに形成した開口OPのアスペクト比:90
・処理ガス:H2ガス、CH2F2ガス、SF6ガス、及び、HBrガスを含む混合ガス
・チャンバ12cの圧力
条件5A:15mTorr(2Pa)で一定
条件5B:25mTorr(3.333Pa)で一定
条件5C
アスペクト比が40になるまで:15mTorr(2Pa)
アスペクト比が40になってから:25mTorr(3.333Pa)
条件5D:
アスペクト比が60になるまで:15mTorr(2Pa)
アスペクト比が60になってから:25mTorr(3.333Pa)
・静電チャック20の温度:−40℃
・第1の高周波:2.5kW、40MHz、連続波
・第2の高周波:7kW、0.4MHz、連続波
Claims (5)
- 被加工物の多層膜をエッチングする方法であって、
前記多層膜は、交互に積層された複数のシリコン酸化膜及び複数のシリコン窒化膜を含み、
前記被加工物は、前記多層膜上に設けられた、炭素を含有するマスクを有し、
前記マスクには複数の開口が形成されており、
該方法は、前記被加工物がプラズマ処理装置のチャンバ内で静電チャック上に載置された状態で実行され、
前記多層膜をエッチングするために、第1のプラズマ処理を実行する工程と、
第1のプラズマ処理を実行する前記工程の後に前記多層膜を更にエッチングするために、第2のプラズマ処理を実行する工程と、
を含み、
第1のプラズマ処理を実行する前記工程及び第2のプラズマ処理を実行する前記工程において、前記多層膜をエッチングするために、前記静電チャックの温度が−15℃以下の温度に設定された状態で、前記チャンバ内で、処理ガスのプラズマが生成され、
前記処理ガスは、水素原子、フッ素原子、及び、炭素原子を含み、且つ、硫黄含有ガスを含み、
前記第2のプラズマ処理において前記多層膜のエッチングの前記マスクのエッチングに対する選択性が前記第1のプラズマ処理における該選択性よりも高くなるように、第1のプラズマ処理を実行する前記工程における前記チャンバの第1の圧力よりも、第2のプラズマ処理を実行する前記工程における前記チャンバの第2の圧力が高い圧力に設定される、
方法。 - 該方法の実行後に前記多層膜に形成されるべき開口の所望のアスペクト比の半分以上、且つ、該所望のアスペクト比よりも小さいアスペクト比を有する開口が該多層膜に形成されるまで、第1のプラズマ処理を実行する前記工程が実行される、請求項1に記載の方法。
- 前記第1の圧力は2パスカル以下であり、前記第2の圧力は3.333パスカル以上である、請求項1又は2に記載の方法。
- 前記処理ガスは、水素ガス及びハイドロフルオロカーボンガスを含む、請求項1〜3の何れか一項に記載の方法。
- 前記処理ガスは、水素ガス、CH 2 F 2 ガス、SF 6 ガス、及びHBrガスを含む、請求項1〜3の何れか一項に記載の方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2017149186A JP6948181B2 (ja) | 2017-08-01 | 2017-08-01 | 多層膜をエッチングする方法 |
TW107125955A TWI765077B (zh) | 2017-08-01 | 2018-07-27 | 多層膜之蝕刻方法 |
SG10201806550PA SG10201806550PA (en) | 2017-08-01 | 2018-07-31 | Method of etching multilayered film |
US16/050,455 US20190043721A1 (en) | 2017-08-01 | 2018-07-31 | Method of etching multilayered film |
KR1020180089239A KR102531961B1 (ko) | 2017-08-01 | 2018-07-31 | 다층막을 에칭하는 방법 |
CN201810862184.0A CN109326517B (zh) | 2017-08-01 | 2018-08-01 | 对多层膜进行蚀刻的方法 |
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JP2019029561A5 JP2019029561A5 (ja) | 2020-06-25 |
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JP (1) | JP6948181B2 (ja) |
KR (1) | KR102531961B1 (ja) |
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JP7228413B2 (ja) * | 2019-03-11 | 2023-02-24 | 東京エレクトロン株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
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JP3347909B2 (ja) * | 1994-06-13 | 2002-11-20 | 松下電器産業株式会社 | プラズマ発生加工方法およびその装置 |
JPH0936103A (ja) * | 1995-07-18 | 1997-02-07 | Ulvac Japan Ltd | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 |
JP2001102362A (ja) * | 1999-09-30 | 2001-04-13 | Advanced Display Inc | コンタクトホールの形成方法およびその形成方法を用いて製造された液晶表示装置 |
JP2003229411A (ja) * | 2002-02-01 | 2003-08-15 | Toshiba Corp | 薄膜トランジスタの製造方法 |
JP2005277375A (ja) * | 2004-02-27 | 2005-10-06 | Nec Electronics Corp | 半導体装置の製造方法 |
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CN104106127B (zh) * | 2012-02-09 | 2016-08-17 | 东京毅力科创株式会社 | 半导体制造装置的制造方法和半导体制造装置 |
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JP6207947B2 (ja) * | 2013-09-24 | 2017-10-04 | 東京エレクトロン株式会社 | 被処理体をプラズマ処理する方法 |
JP2015079793A (ja) * | 2013-10-15 | 2015-04-23 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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JP6454492B2 (ja) * | 2014-08-08 | 2019-01-16 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
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- 2018-07-31 US US16/050,455 patent/US20190043721A1/en not_active Abandoned
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TW201911411A (zh) | 2019-03-16 |
CN109326517B (zh) | 2023-07-28 |
TWI765077B (zh) | 2022-05-21 |
KR102531961B1 (ko) | 2023-05-12 |
SG10201806550PA (en) | 2019-03-28 |
US20190043721A1 (en) | 2019-02-07 |
CN109326517A (zh) | 2019-02-12 |
JP2019029561A (ja) | 2019-02-21 |
KR20190013663A (ko) | 2019-02-11 |
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