JP6207947B2 - 被処理体をプラズマ処理する方法 - Google Patents
被処理体をプラズマ処理する方法 Download PDFInfo
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- JP6207947B2 JP6207947B2 JP2013196901A JP2013196901A JP6207947B2 JP 6207947 B2 JP6207947 B2 JP 6207947B2 JP 2013196901 A JP2013196901 A JP 2013196901A JP 2013196901 A JP2013196901 A JP 2013196901A JP 6207947 B2 JP6207947 B2 JP 6207947B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3457—Sputtering using other particles than noble gas ions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Description
上部電極40に印加される高周波電力:2000W
C4F8ガスの流量:200sccm
処理時間:360秒
Claims (6)
- 上部電極と該上部電極に対向して配置される下部電極との間で生成されるプラズマにより処理容器内に配置される被処理体を処理する方法であって、該方法は、
SF6、ClF3、及びF2の少なくとも何れかを含有する第1のガスを処理容器内に供給し、該第1のガスのプラズマを生成して、前記被処理体の被エッチング層をエッチングするエッチング工程と、
ハイドロカーボン、フルオロカーボン及びフルオロハイドロカーボンの少なくとも何れかを含有する第2のガスを前記処理容器内に供給し、該第2のガスのプラズマを生成して、前記被エッチング層の少なくとも一部に前記第2のガスに由来する保護膜を形成する第1の成膜工程と、
を含み、
前記エッチング工程においては、前記処理容器内の圧力が第1の圧力とされ、且つ前記下部電極に第1のバイアス電力が印加され、
前記第1の成膜工程においては、前記処理容器内の圧力が前記第1の圧力よりも低い第2の圧力とされ、且つ前記下部電極に前記第1のバイアス電力よりも高い第2のバイアス電力が印加され、
前記エッチング工程及び前記第1の成膜工程を含むシーケンスが繰り返し実行され、
前記シーケンスは、
前記エッチング工程と前記第1の成膜工程との間で行われる第2の成膜工程であり、前記処理容器内の圧力が前記第1の圧力とされ、且つ前記下部電極に前記第1のバイアス電力が印加された状態で、前記処理容器内において前記第2のガスのプラズマを生成して、前記被エッチング層の少なくとも一部に前記保護膜を形成する、該第2の成膜工程と、
前記第2の成膜工程と前記第1の成膜工程との間で行われる第3の成膜工程であり、前記処理容器内の圧力が前記第1の圧力とされ、且つ前記下部電極に前記第2のバイアス電力が印加された状態で、前記処理容器内において前記第2のガスのプラズマを生成して、前記被エッチング層の少なくとも一部に前記保護膜を形成する、該第3の成膜工程と、
を更に含む、方法。 - 前記エッチング工程において、O2ガスが前記第1のガスに添加される、請求項1に記載の方法。
- 前記シーケンスは、前記エッチング工程の前に行われるブレークスルー工程であり、前記処理容器内の圧力が第1の圧力とされ、且つ前記下部電極に前記第2のバイアス電力が印加された状態で、前記処理容器内において前記第1のガスのプラズマを生成する、該ブレークスルー工程を更に含む、
請求項1又は2に記載の方法。 - 前記シーケンスの繰り返しの途中から、
前記ブレークスルー工程、前記第1の成膜工程、及び前記第3の成膜工程において、前記下部電極に印加される第2のバイアス電力を増加させる、
請求項3に記載の方法。 - 前記シーケンスの繰り返しの途中から、
前記第1の成膜工程、前記第2の成膜工程、及び前記第3の成膜工程において、前記処理容器内に供給される前記第2のガスの流量を減少させる、
請求項3又は4に記載の方法。 - 前記第2のガスが、CH4、CH3F、C4F6、及びC4F8のうち少なくとも何れかを含む、請求項1〜5の何れか一項に記載の方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2013196901A JP6207947B2 (ja) | 2013-09-24 | 2013-09-24 | 被処理体をプラズマ処理する方法 |
TW103132576A TWI605515B (zh) | 2013-09-24 | 2014-09-22 | Method for plasma treatment of a processed body |
KR1020140126598A KR102269896B1 (ko) | 2013-09-24 | 2014-09-23 | 피처리체를 플라즈마 처리하는 방법 |
US14/493,904 US9139901B2 (en) | 2013-09-24 | 2014-09-23 | Plasma processing method |
CN201410495671.XA CN104465365B (zh) | 2013-09-24 | 2014-09-24 | 等离子体处理方法 |
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JP2013196901A JP6207947B2 (ja) | 2013-09-24 | 2013-09-24 | 被処理体をプラズマ処理する方法 |
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JP6207947B2 true JP6207947B2 (ja) | 2017-10-04 |
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TW (1) | TWI605515B (ja) |
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JP6504827B2 (ja) * | 2015-01-16 | 2019-04-24 | 東京エレクトロン株式会社 | エッチング方法 |
JP6476418B2 (ja) * | 2016-02-04 | 2019-03-06 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法および電子部品実装構造体の製造方法 |
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JPWO2017159512A1 (ja) * | 2016-03-17 | 2019-01-24 | 日本ゼオン株式会社 | プラズマエッチング方法 |
KR102576706B1 (ko) * | 2016-04-15 | 2023-09-08 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
CN108573867B (zh) * | 2017-03-13 | 2020-10-16 | 北京北方华创微电子装备有限公司 | 硅深孔刻蚀方法 |
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US10923328B2 (en) * | 2017-06-21 | 2021-02-16 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
JP6913569B2 (ja) * | 2017-08-25 | 2021-08-04 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
CN110783187B (zh) * | 2018-07-25 | 2024-04-19 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
US20210210355A1 (en) * | 2020-01-08 | 2021-07-08 | Tokyo Electron Limited | Methods of Plasma Processing Using a Pulsed Electron Beam |
JP7250895B2 (ja) * | 2021-06-22 | 2023-04-03 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
JP7257088B1 (ja) * | 2022-03-24 | 2023-04-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
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- 2014-09-22 TW TW103132576A patent/TWI605515B/zh active
- 2014-09-23 KR KR1020140126598A patent/KR102269896B1/ko active IP Right Grant
- 2014-09-23 US US14/493,904 patent/US9139901B2/en active Active
- 2014-09-24 CN CN201410495671.XA patent/CN104465365B/zh active Active
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US20150083580A1 (en) | 2015-03-26 |
TWI605515B (zh) | 2017-11-11 |
JP2015065215A (ja) | 2015-04-09 |
CN104465365B (zh) | 2017-07-11 |
KR102269896B1 (ko) | 2021-06-25 |
CN104465365A (zh) | 2015-03-25 |
TW201521111A (zh) | 2015-06-01 |
KR20150033570A (ko) | 2015-04-01 |
US9139901B2 (en) | 2015-09-22 |
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