JP6211947B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6211947B2 JP6211947B2 JP2014020626A JP2014020626A JP6211947B2 JP 6211947 B2 JP6211947 B2 JP 6211947B2 JP 2014020626 A JP2014020626 A JP 2014020626A JP 2014020626 A JP2014020626 A JP 2014020626A JP 6211947 B2 JP6211947 B2 JP 6211947B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims description 126
- 238000012545 processing Methods 0.000 claims description 98
- 238000005530 etching Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 30
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002060 fluorescence correlation spectroscopy Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Description
・H2ガスの流量:50〜300sccm
・HBrガスの流量:5〜50sccm
・NF3ガスの流量:50〜100sccm
・CH4ガスの流量:5〜50sccm
・CH2F2ガスの流量:40〜80sccm
・第1の高周波電源62の高周波電力の周波数:27〜100MHz
・第1の高周波電源62の高周波電力:500〜2700W
・第2の高周波電源64の高周波電力の周波数:0.4〜13MHz
・第2の高周波電源64の高周波電力:1000〜4000W
・処理容器12内の圧力:2.66〜13.3Pa (20〜100mT)
・高周波電力のONとOFFの周波数:1〜40kHz
・一周期において高周波電力がONの期間が占めるデューティー比:50〜90%
・高周波電力がONの期間の負の直流電圧の絶対値:150〜500V
・高周波電力がOFFの期間の負の直流電圧の絶対値:350〜1000V
Claims (9)
- 半導体装置の製造方法であって、
互いに異なる誘電率を有し、交互に積層された第1の誘電体膜及び第2の誘電体膜を含む多層膜、並びに、該多層膜上に設けられたマスクを有する被処理体を、プラズマ処理装置の処理容器内に準備する工程であり、該第1の誘電体膜は酸化シリコン膜であり、該第2の誘電体膜は窒化シリコン膜である、該工程と、
前記多層膜をエッチングする工程であって、水素ガス、臭化水素ガス、及び三フッ化窒素ガスを含み、且つ、炭化水素ガス、フルオロハイドロカーボンガス、及びフルオロカーボンガスのうち少なくとも一つを含む処理ガスを前記処理容器内に供給し、前記プラズマ処理装置の前記処理容器内において前記処理ガスのプラズマを生成する、該工程と、
を含み、
前記多層膜をエッチングする工程において、前記処理ガスに含まれる炭素を含有する保護膜が前記マスクの表面に形成され、前記プラズマからの水素の活性種により前記保護膜が改質され、前記第1の誘電体膜及び前記第2の誘電体膜が前記マスクに対して選択的にエッチングされる、
製造方法。 - 前記プラズマ処理装置は容量結合型プラズマ処理装置であって、
前記多層膜をエッチングする工程において、前記プラズマ処理装置の上部電極又は下部電極にプラズマ生成用の高周波電力を供給し、前記プラズマ処理装置の下部電極に高周波バイアス電力を供給する、請求項1記載の製造方法。 - 前記フルオロハイドロカーボンガスは、CH2F2ガス、CH3Fガス、又はCHF3ガスである、請求項1又は2に記載の製造方法。
- 前記炭化水素ガスは、CH4ガスである、請求項1〜3の何れか一項に記載の製造方法。
- 前記マスクは、アモルファスカーボン製である、請求項1〜4の何れか一項に記載の製造方法。
- 前記多層膜をエッチングする工程が行われている期間内において前記被処理体の温度が変更される、請求項1〜5の何れか一項に記載の製造方法。
- 前記多層膜をエッチングする工程では、第1の期間中の前記被処理体の温度が、該第1の期間の後の第2の期間中の前記被処理体の温度よりも高く設定される、請求項6に記載の製造方法。
- 前記多層膜をエッチングする工程では、第1の期間中の前記被処理体の温度が、該第1の期間の後の第2の期間中の前記被処理体の温度よりも低く設定される、請求項6に記載の製造方法。
- 前記多層膜をエッチングする工程では、該多層膜のエッチングによって該多層膜に形成された形状を画成する面に、前記プラズマからの臭素を含むエッチング副生成物の膜が形成される、請求項1〜8の何れか一項に記載の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014020626A JP6211947B2 (ja) | 2013-07-31 | 2014-02-05 | 半導体装置の製造方法 |
KR1020140097293A KR102266267B1 (ko) | 2013-07-31 | 2014-07-30 | 반도체 장치의 제조 방법 |
US14/447,881 US9039913B2 (en) | 2013-07-31 | 2014-07-31 | Semiconductor device manufacturing method |
CN201410372926.3A CN104347521B (zh) | 2013-07-31 | 2014-07-31 | 半导体器件的制造方法 |
US14/695,825 US9449838B2 (en) | 2013-07-31 | 2015-04-24 | Semiconductor device manufacturing method |
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JP2013159005 | 2013-07-31 | ||
JP2013159005 | 2013-07-31 | ||
JP2014020626A JP6211947B2 (ja) | 2013-07-31 | 2014-02-05 | 半導体装置の製造方法 |
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JP2015046564A JP2015046564A (ja) | 2015-03-12 |
JP6211947B2 true JP6211947B2 (ja) | 2017-10-11 |
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US (2) | US9039913B2 (ja) |
JP (1) | JP6211947B2 (ja) |
KR (1) | KR102266267B1 (ja) |
CN (1) | CN104347521B (ja) |
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JP6328524B2 (ja) * | 2014-08-29 | 2018-05-23 | 東京エレクトロン株式会社 | エッチング方法 |
JP6339961B2 (ja) * | 2015-03-31 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
JP6339963B2 (ja) * | 2015-04-06 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
JP6498022B2 (ja) * | 2015-04-22 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング処理方法 |
CN106298502B (zh) * | 2015-05-18 | 2019-04-09 | 中微半导体设备(上海)股份有限公司 | 一种利用等离子体对多层材料刻蚀的方法 |
JP6494424B2 (ja) * | 2015-05-29 | 2019-04-03 | 東京エレクトロン株式会社 | エッチング方法 |
JP6541439B2 (ja) * | 2015-05-29 | 2019-07-10 | 東京エレクトロン株式会社 | エッチング方法 |
CN107851559B (zh) * | 2015-06-26 | 2022-04-26 | 东京毅力科创株式会社 | 气相蚀刻系统和方法 |
KR102485541B1 (ko) | 2015-06-26 | 2023-01-05 | 도쿄엘렉트론가부시키가이샤 | 다른 필름 또는 마스크에 대한 실리콘-함유 반사 방지 코팅 또는 실리콘 산질화물의 제어 가능한 식각 선택비에 따른 기상 식각 |
JP6604833B2 (ja) * | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
US9997374B2 (en) * | 2015-12-18 | 2018-06-12 | Tokyo Electron Limited | Etching method |
JP6498152B2 (ja) * | 2015-12-18 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング方法 |
JP6479698B2 (ja) * | 2016-02-18 | 2019-03-06 | 東芝メモリ株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP6604911B2 (ja) * | 2016-06-23 | 2019-11-13 | 東京エレクトロン株式会社 | エッチング処理方法 |
JP2018046185A (ja) * | 2016-09-15 | 2018-03-22 | 東京エレクトロン株式会社 | 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法 |
JP6945385B2 (ja) * | 2017-08-14 | 2021-10-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7137927B2 (ja) * | 2017-12-20 | 2022-09-15 | キオクシア株式会社 | 半導体装置の製造方法 |
KR102314450B1 (ko) * | 2018-10-26 | 2021-10-19 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 방법 |
JP7413093B2 (ja) * | 2019-07-18 | 2024-01-15 | キオクシア株式会社 | エッチング方法、半導体製造装置、および半導体装置の製造方法 |
KR20220082068A (ko) * | 2019-11-08 | 2022-06-16 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
JP7096279B2 (ja) * | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
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- 2014-02-05 JP JP2014020626A patent/JP6211947B2/ja active Active
- 2014-07-30 KR KR1020140097293A patent/KR102266267B1/ko active IP Right Grant
- 2014-07-31 US US14/447,881 patent/US9039913B2/en active Active
- 2014-07-31 CN CN201410372926.3A patent/CN104347521B/zh active Active
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Publication number | Publication date |
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JP2015046564A (ja) | 2015-03-12 |
US20150228500A1 (en) | 2015-08-13 |
KR102266267B1 (ko) | 2021-06-16 |
US20150037982A1 (en) | 2015-02-05 |
US9449838B2 (en) | 2016-09-20 |
US9039913B2 (en) | 2015-05-26 |
CN104347521B (zh) | 2018-12-18 |
KR20150015408A (ko) | 2015-02-10 |
CN104347521A (zh) | 2015-02-11 |
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