JP6339963B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP6339963B2 JP6339963B2 JP2015077586A JP2015077586A JP6339963B2 JP 6339963 B2 JP6339963 B2 JP 6339963B2 JP 2015077586 A JP2015077586 A JP 2015077586A JP 2015077586 A JP2015077586 A JP 2015077586A JP 6339963 B2 JP6339963 B2 JP 6339963B2
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- 238000000034 method Methods 0.000 title claims description 109
- 238000005530 etching Methods 0.000 title claims description 41
- 239000007789 gas Substances 0.000 claims description 175
- 230000008569 process Effects 0.000 claims description 51
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 34
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 33
- 229910001882 dioxygen Inorganic materials 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 27
- 229910052736 halogen Inorganic materials 0.000 claims description 18
- 150000002367 halogens Chemical class 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- 238000005524 ceramic coating Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (6)
- 処理されるべき被処理体をプラズマ処理装置の処理容器内に提供する工程であり、該被処理体は、シリコン酸化膜及びシリコン窒化膜を交互に積層することによって構成された多層膜を有する第1領域、並びに、該第1領域の該シリコン酸化膜の膜厚よりも大きい膜厚を有するシリコン酸化膜を有する第2領域を含む、該工程と、
前記第1領域及び前記第2領域が同時にエッチングされるよう、前記第1領域及び前記第2領域の各々の上に開口を提供するように前記被処理体上にマスクを提供する工程と、
前記プラズマ処理装置の前記処理容器内で、フルオロカーボンガス、ハイドロフルオロカーボンガス、及び酸素ガスを含む第1の処理ガスのプラズマを生成する工程と、
前記プラズマ処理装置の前記処理容器内で、フルオロカーボンガス、ハイドロフルオロカーボンガス、酸素ガス、及びハロゲン含有ガスを含む第2の処理ガスのプラズマを生成する工程であり、前記ハロゲン含有ガスは、ハロゲン元素とシリコンとの反応生成物を形成して前記被処理体の表面に堆積物を形成するガスである、該工程と、
前記プラズマ処理装置の前記処理容器内で、酸素ガスを含む第3の処理ガスのプラズマを生成する工程と、
を含み、
第1の処理ガスのプラズマを生成する前記工程、第2の処理ガスのプラズマを生成する前記工程、及び第3の処理ガスのプラズマを生成する前記工程を含むシーケンスが複数回実行される、エッチング方法。 - 前記シーケンスの実行の回数の増加につれて、前記第1の処理ガス中の前記酸素ガスの流量及び前記第2の処理ガス中の前記酸素ガスの流量が段階的に増加される、請求項1に記載のエッチング方法。
- 前記シーケンスの実行の回数の増加につれて、前記被処理体の温度が段階的に上昇される、請求項1又は2に記載のエッチング方法。
- 前記第2の処理ガスは、前記第1の処理ガスと前記ハロゲン含有ガスとを含む、請求項1〜3の何れか一項に記載のエッチング方法。
- 第1の処理ガスのプラズマを生成する前記工程の実行時間長は、第2の処理ガスのプラズマを生成する前記工程の実行時間長よりも長い、請求項1〜4の何れか一項に記載のエッチング方法。
- 前記シーケンスの複数回の実行の各々において、前記処理容器内の圧力、及びプラズマの生成のための電力が一定である、請求項1〜5の何れか一項に記載のエッチング方法。
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