JP2020141033A - 堆積処理方法及びプラズマ処理装置 - Google Patents
堆積処理方法及びプラズマ処理装置 Download PDFInfo
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Abstract
Description
一実施形態に係るプラズマ処理装置1について、図1を用いて説明する。図1は、一実施形態に係るプラズマ処理装置1の一例を示す断面模式図である。ここでは、プラズマ処理装置1の一例として容量結合型プラズマエッチング装置を挙げて説明する。
かかる構成のプラズマ処理装置1において、以下の処理条件でプラズマを生成し、堆積処理を行った結果の一例を図2に示す。図2は、比較例1,2に係る堆積処理の結果の一例を示す図である。比較例1の処理条件は以下である。
圧力 25mT(3.33Pa)
HFパワー/LFパワー 5000/8000W
直流電圧 −300V
ガス種 C4F6、C4F8、Ar、O2
このとき、C4F6、C4F8、O2ガスの総流量に対するO2ガスの流量比は、約37%であった。
図3を参照しながら、プラズマ着火時のプラズマ状態の過渡状態及び安定状態について説明し、マスクの開口の閉塞について考察する。図3(a)のグラフの横軸は時間を示し、縦軸はHFパワー又はLFパワー(反射パワーを含む)を示す。時刻T1になるまでの時間は、プラズマ未着火の状態である。
圧力 25mT(3.33Pa)
HFパワー/LFパワー 5000/8000W
直流電圧 −300V
ガス種 C4F6、C4F8、Ar、O2
この工程では、マスク101の開口にシリコン酸化膜102をタングステン膜103が露出するまでエッチングする。その際、主にCF系のガス(C4F6、C4F8)によりエッチングが促進され、シリコン酸化膜102にホール104が形成される。また、エッチング工中、主にカーボンを含む堆積物がマスク101の上面や側面、ホールの側面等に付着することで、マスク選択比を確保し、ホール104形状の垂直性を確保できる。
次に、一実施形態に係る堆積工程を含むプラズマ処理の一例について、図7を参照しながら説明する。図7は、一実施形態に係るプラズマ処理の一例を示すフローチャートである。本処理は、制御部70により制御される。
図7のステップS8にて呼び出される連続プラズマ処理について、図8を参照して説明する。図8は、一実施形態に係る連続プラズマ処理の一例を示すフローチャートである。
最後に、一実施形態に係るプラズマ処理の結果の一例について、図10及び図11を参照して説明する。図10は、一実施形態に係るプラズマ処理の結果の一例を示す断面図及び上面図である。図11は、一実施形態に係るプラズマ処理の結果のエッチング形状について、図11の上面図から計測できるホール104(56個)のCDのサイズのバラツキ及びホール104の真円度を示す度数分布(ヒストグラム)である。
「プラズマが安定した」と判定する方法の一例として、HFパワーの反射波及びLFパワーの反射波がなくなった又は規定値以下になったときに、プラズマが安定したと判定する方法がある。しかし、プラズマが安定したと判定する方法は、これに限られず、次の各種の判定方法を用いることができる。
・終点検出装置等、発光分光分析(OES)によるプラズマモニターが可能な装置がプラズマ処理装置1に併設されている場合、測定されたプラズマモニター値が予め記憶しているプラズマ安定時と同じ値になったとき又は規定する範囲に入ったとき
・電圧値や電流値を測定可能なVIセンサ等の電極に通電する高周波(RF)の電圧/電流/位相をモニターする機器が併設されている場合、機器によるそれぞれのモニター値が予め記憶しているプラズマ安定時と同じ値になったとき又は規定する範囲に入ったとき
以上の手法だけでなく、HFパワー、LFパワー、プラズマの状態をモニターする方法を用いても構わない。
2 チャンバ
21 ステージ
22 シャワーヘッド
32 第1高周波電源
34 第2高周波電源
42 可変直流電源
70 制御部
101 マスク
102 シリコン酸化膜
103 タングステン膜
104 ホール
Claims (10)
- 第1の処理条件に基づき生成された第1のプラズマを用いて、基板に対して堆積物を堆積させる工程において、
前記堆積させる工程の前に実行される前工程から前記堆積させる工程に移行する際、前記第1のプラズマの状態が安定するまでの間、前記第1の処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
堆積処理方法。 - 第1の処理条件に基づき生成された第1のプラズマを用いて、基板に対して堆積物を堆積させる工程において、
前記第1のプラズマの状態を停止する際、前記第1のプラズマの状態を停止する時刻よりも予め定められた時間だけ前の時刻から前記第1のプラズマの状態を停止するまでの間、前記第1の処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
堆積処理方法。 - 前記前工程は、第2の処理条件に基づき実行され、
前記第2の処理条件は、前記第1の処理条件と異なる、
請求項1に記載の堆積処理方法。 - 前記前工程ではプラズマを生成しない、
請求項3に記載の堆積処理方法。 - 前記第1の処理条件と異なる第n(n≧3)の処理条件に基づき生成された第nのプラズマを用いて、基板に対して堆積物を堆積させる工程において、
前記第1のプラズマを用いて前記堆積させる工程から前記第nのプラズマを用いて前記堆積させる工程に移行する際、前記第nのプラズマの状態が安定するまでの間、前記第nの処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
請求項3又は4に記載の堆積処理方法。 - 第n(n=1又はn≧3)のプラズマの状態を示す値が、予め定められた正常な範囲内に所定以上収まるまでの間、前記第nの処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
請求項1〜5のいずれか一項に記載の堆積処理方法。 - 第n(n=1又はn≧3)の処理条件よりも基板に対して前記堆積物を堆積させない条件は、
堆積性のプリカーサを除去するガスを含む、
請求項1〜6のいずれか一項に記載の堆積処理方法。 - 第n(n=1又はn≧3)の処理条件よりも基板に対して前記堆積物を堆積させない条件は、
前記第nの処理条件に含まれるガスよりも堆積性のプリカーサの割合を下げるガスを含む及び/又は前記第1の処理条件に含まれるガスよりも反応性のプリカーサの割合を上げるガスを含む、
請求項1〜7のいずれか一項に記載の堆積処理方法。 - チャンバと、制御部とを有し、
前記制御部は、
前記チャンバ内に基板を提供し、
第1の処理条件に基づき生成された第1のプラズマを用いて、基板に対して堆積物を堆積させる工程において、前記堆積させる工程の前に実行される前工程から前記堆積させる工程に移行する際、前記第1のプラズマの状態が安定するまでの間、前記第1の処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
プラズマ処理装置。 - チャンバと、制御部とを有し、
前記制御部は、
前記チャンバ内に基板を提供し、
第1の処理条件に基づき生成された第1のプラズマを用いて、基板に対して堆積物を堆積させる工程において、前記第1のプラズマの状態を停止する際、前記第1のプラズマの状態を停止する時刻よりも予め定められた時間だけ前の時刻から前記第1のプラズマの状態を停止するまでの間、前記第1の処理条件よりも基板に対して前記堆積物を堆積させない条件に制御する、
プラズマ処理装置。
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