JP2021090039A - 基板処理方法及びプラズマ処理装置 - Google Patents
基板処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 101
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- 238000000034 method Methods 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 38
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 20
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052751 metal Inorganic materials 0.000 claims description 10
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
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- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 229910020177 SiOF Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 239000003507 refrigerant Substances 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
図1は、第1の実施形態に係る基板処理方法の一例を示すフローチャートである。図1に示す方法MT1は、シリコンを含有する膜をエッチングするために実行される。方法MT1は、例えば、3次元構造を有するNANDフラッシュメモリの製造に用いることができる。方法MT1は、プラズマ処理装置を用いて実行される。図2は、一例のプラズマ処理装置を概略的に示す図である。図1に示す方法MT1は、図2に示すプラズマ処理装置1を用いて実行され得る。
第1の実施形態に係る基板処理方法において、処理回数が増加するにつれて、チャンバ10の内壁や支持台14等に付着する反応生成物の付着量が増加する。反応生成物の付着量が増加すると処理環境が変わるため、基板W間での処理の均一性が悪化することがある。また、反応生成物の付着量の増加は、パーティクルの発生要因になる。そこで、クリーニングガスをプラズマ化させたプラズマによりチャンバ内をクリーニングすることが行われる。
第1の実施形態及び第2の実施形態では、いずれも第1の処理ガスにはフッ化水素ガスが含まれる。フッ化水素ガスは腐食性の高いガスであるため、エッチング工程の前に、チャンバ10の内壁にプリコート膜を形成することが好ましい。特に、フッ化水素ガスを高濃度で使用する場合には、チャンバ10の内壁にプリコート膜を形成し、チャンバ10の内壁の腐食を抑制することで、メンテナンス頻度を低減することができる。ここで、チャンバ10の内壁には、チャンバ10の側壁及び天井(上部電極30の天板34)のほか、支持台14等が含まれる。
Claims (13)
- チャンバ内に、シリコン含有膜及び該シリコン含有膜上にマスクを有する基板を提供する工程と、
前記チャンバ内において、フッ化水素ガスを含む第1の処理ガスからプラズマを生成し、前記シリコン含有膜をエッチングする工程と、
を含み、
不活性ガスを除いた前記第1の処理ガスの全流量に対する前記フッ化水素ガスの流量は25体積%以上である、
基板処理方法。 - 前記不活性ガスを除いた前記第1の処理ガスの全流量に対する前記フッ化水素ガスの流量は80体積%未満である、請求項1に記載の基板処理方法。
- 前記第1の処理ガスは、炭素含有ガス、酸素含有ガス及びハロゲン含有ガスからなる群から選択される少なくとも一種を含む、請求項1に記載の基板処理方法。
- 前記炭素含有ガスは、フルオロカーボンガス、ハイドロフルオロカーボンガス、及びハイドロカーボンガスからなる群から選択される少なくとも一種を含む、請求項3に記載の基板処理方法。
- 前記シリコン含有膜は、シリコン酸化膜及びシリコン窒化膜を含む積層膜、ポリシリコン膜、低誘電率膜、並びにシリコン酸化膜及びポリシリコン膜を含む積層膜からなる群から選択される少なくとも一種である、請求項1に記載の基板処理方法。
- 前記マスクは、炭素含有マスク又は金属含有マスクである、請求項1に記載の基板処理方法。
- 前記炭素含有マスクは、スピンオンカーボン、炭化タングステン、アモルファスカーボン、及び炭化ホウ素からなる群から選択される少なくとも一種から形成される、請求項6に記載の基板処理方法。
- 前記エッチングする工程の前に、前記基板が載置される静電チャックの温度を0℃以下に調整する工程をさらに備える、請求項1に記載の基板処理方法。
- 前記チャンバ内において、第2の処理ガスからプラズマを生成し、前記チャンバ内をクリーニングする工程をさらに含む、請求項1に記載の基板処理方法。
- 前記第2の処理ガスは、フッ素含有ガス、酸素含有ガス、水素含有ガス及び窒素含有ガスからなる群から選択される少なくとも一種を含む、請求項9に記載の基板処理方法。
- 前記基板を提供する工程の前に、前記チャンバ内において、第3の処理ガスからプラズマを生成し、前記チャンバの内壁にプリコート膜を形成する工程をさらに含む、請求項1に記載の基板処理方法。
- 前記第3の処理ガスは、シリコン含有ガス及び酸素含有ガスを含む、請求項11に記載の基板処理方法。
- ガス供給口及びガス排出口を有するチャンバと、
プラズマ生成部と、
制御部と、
を含むプラズマ処理装置であって、
前記制御部は、
前記チャンバ内に、シリコン含有膜及び該シリコン含有膜上に設けられたマスクを有する基板を配置する工程と、
前記チャンバ内において、フッ化水素ガスを含む第1の処理ガスからプラズマを生成し、前記シリコン含有膜をエッチングする工程と、
を含む処理を実行し、
前記エッチングする工程において、不活性ガスを除いた前記第1の処理ガスの全流量に対する前記フッ化水素ガスの流量が25体積%以上となるように制御する、
プラズマ処理装置。
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WO2024043166A1 (ja) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板処理システム |
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