JP7174634B2 - 膜をエッチングする方法 - Google Patents
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Description
Claims (8)
- 基板の膜をエッチングする方法であって、
前記膜及び該膜上にマスクを有する前記基板を準備する工程と、
前記マスクの上面の上に選択的に堆積物を形成する工程と、
堆積物を形成する前記工程の後に、前記膜をエッチングする工程と、
を含み、
エッチングする前記工程は、
前記基板上に、処理ガスのプラズマに含まれる化学種の層を形成する工程と、
前記化学種と前記膜とを反応させるために、前記基板に不活性ガスのプラズマからイオンを供給する工程と、
を含み、
堆積物を形成する前記工程は、プラズマ処理装置のチャンバ内に前記基板が収容された状態で実行され、
堆積物を形成する前記工程では、炭素含有ガスと、前記堆積物の量を調整する調整ガスとして窒素含有ガスとを含む混合ガスのプラズマが前記チャンバ内で形成され、該混合ガスのプラズマに含まれる炭素を含む前記堆積物が、前記マスクの前記上面の上に形成される、
方法。 - 前記基板の前記膜は、シリコン含有膜であり、
前記処理ガスは、ハロゲン元素及び炭素を含むガスである、
請求項1に記載の方法。 - 基板の膜をエッチングする方法であって、
前記膜及び該膜上にマスクを有する前記基板を準備する工程と、
前記マスクの上面の上に選択的に堆積物を形成する工程と、
堆積物を形成する前記工程の後に、前記膜をエッチングする工程と、
を含み、
エッチングする前記工程は、
第1の処理ガスのプラズマからのイオンにより、前記膜の露出された表面を含む該膜の少なくとも一部を改質する工程であり、該少なくとも一部から改質領域が形成される、該工程と、
第2の処理ガスのプラズマからの化学種により、前記改質領域を選択的にエッチングする工程と、
を含み、
堆積物を形成する前記工程は、プラズマ処理装置のチャンバ内に前記基板が収容された状態で実行され、
前記チャンバ内にシリコン含有ガス及び前記堆積物の量を調整する調整ガスを含む混合ガスを供給する工程と、
前記チャンバ内に前記調整ガスを供給する工程と、
を含み、
混合ガスを供給する前記工程と調整ガスを供給する前記工程とが交互に繰り返され、
混合ガスを供給する前記工程の実行中に前記チャンバ内で前記混合ガスからプラズマを生成し、調整ガスを供給する前記工程の実行中に前記チャンバ内で前記調整ガスからプラズマを生成するために、高周波電力が供給される、
方法。 - 前記基板の前記膜は、シリコン窒化膜であり、
前記第1の処理ガスは、水素含有ガスを含み、
前記第2の処理ガスは、フッ素含有ガス及び水素ガスを含む、
請求項3に記載の方法。 - 前記基板の前記膜は、炭化シリコン膜であり、
前記第1の処理ガスは、窒素含有ガスを含み、
前記第2の処理ガスは、フッ素含有ガス及び水素ガスを含む、
請求項3に記載の方法。 - 前記第1の処理ガスの前記プラズマからの前記イオンが前記堆積物を貫通してマスクに到達しないように、該堆積物の厚みが設定される、請求項3~5の何れか一項に記載の方法。
- 基板の膜をエッチングする方法であって、
前記膜及び該膜上にマスクを有する前記基板を準備する工程と、
前記マスクの上面の上に選択的に、炭素を含む堆積物を形成する工程と、
堆積物を形成する前記工程の後に、前記膜をエッチングする工程と、
を含み、
エッチングする前記工程は、
前記基板上に、処理ガスのプラズマに含まれる化学種の層を形成する工程と、
前記化学種と前記膜とを反応させるために、前記基板に不活性ガスのプラズマからイオンを供給する工程と、
を含み、
堆積物を形成する前記工程は、プラズマ処理装置のチャンバ内に前記基板が収容された状態で実行され、
前記チャンバ内にシリコン含有ガス及び前記堆積物の量を調整する調整ガスを含む混合ガスを供給する工程と、
前記チャンバ内に前記調整ガスを供給する工程と、
を含み、
混合ガスを供給する前記工程と調整ガスを供給する前記工程とが交互に繰り返され、
混合ガスを供給する前記工程の実行中に前記チャンバ内で前記混合ガスからプラズマを生成し、調整ガスを供給する前記工程の実行中に前記チャンバ内で前記調整ガスからプラズマを生成するために、高周波電力が供給される、
方法。 - 前記プラズマ処理装置は、
前記チャンバと、
下部電極を有し、前記チャンバ内において前記基板を支持するように構成された基板支持器と、
前記チャンバ内の空間を介して前記基板支持器の上方に設けられた上部電極と、
前記上部電極に電気的に接続されており、第1の高周波電力を発生するように構成された第1の高周波電源と、
前記下部電極に電気的に接続されており、第1の高周波電力の周波数よりも低い周波数を有する第2の高周波電力を発生するように構成された第2の高周波電源と、
を備える、請求項1~7の何れか一項に記載の方法。
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JP2019007137A JP7174634B2 (ja) | 2019-01-18 | 2019-01-18 | 膜をエッチングする方法 |
TW109100404A TWI833873B (zh) | 2019-01-18 | 2020-01-07 | 膜之蝕刻方法 |
CN202010016949.6A CN111463123B (zh) | 2019-01-18 | 2020-01-08 | 蚀刻膜的方法 |
KR1020200006760A KR20200090133A (ko) | 2019-01-18 | 2020-01-17 | 막을 에칭하는 방법 |
US16/746,106 US11127598B2 (en) | 2019-01-18 | 2020-01-17 | Film etching method for etching film |
US17/409,645 US11594422B2 (en) | 2019-01-18 | 2021-08-23 | Film etching method for etching film |
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JP7066565B2 (ja) * | 2018-07-27 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
CN114762091B (zh) * | 2020-09-18 | 2023-12-15 | 东京毅力科创株式会社 | 蚀刻方法、等离子体处理装置、基板处理系统以及存储介质 |
KR20230004014A (ko) | 2021-06-30 | 2023-01-06 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
WO2023127817A1 (ja) * | 2021-12-28 | 2023-07-06 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
WO2023239617A1 (en) * | 2022-06-09 | 2023-12-14 | Lam Research Corporation | In situ declogging in plasma etching |
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US11594422B2 (en) | 2023-02-28 |
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