TWI833877B - 蝕刻方法、電漿處理裝置及處理系統 - Google Patents
蝕刻方法、電漿處理裝置及處理系統 Download PDFInfo
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- TWI833877B TWI833877B TW109101624A TW109101624A TWI833877B TW I833877 B TWI833877 B TW I833877B TW 109101624 A TW109101624 A TW 109101624A TW 109101624 A TW109101624 A TW 109101624A TW I833877 B TWI833877 B TW I833877B
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Abstract
本發明之課題係提供可於遮罩上形成不同於氧化矽層之層並將膜加以蝕刻的蝕刻方法。
本發明一實施形態之蝕刻方法,包含於基板上形成含矽層之製程。基板具有膜及遮罩。含矽層以使用含矽之前驅氣體的電漿處理形成。含矽層含有矽、碳、及氮。蝕刻方法更包含進行膜之電漿蝕刻的製程。在從於基板上形成含矽層之製程的開始時間點至進行膜之電漿蝕刻的製程之結束時間點為止的期間,將基板配置於減壓之環境下。
Description
本揭示之例示的實施形態係有關於蝕刻方法、電漿處理裝置、及處理系統。
在電子元件之製造中,為將遮罩之圖形轉印至基板之膜,而進行電漿蝕刻。於執行電漿蝕刻前,為縮窄遮罩之開口的寬度,有於基板上形成氧化矽層之情形。基板之膜係以電漿蝕刻對氧化矽層選擇性地蝕刻。此種技術記載於專利文獻1。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利公開公報2016-76621號
[發明欲解決之問題]
吾人企求於遮罩上形成不同於氧化矽層之層來蝕刻膜。
[解決問題之手段]
在一個例示之實施形態中,提供膜之蝕刻方法。蝕刻方法包含於基板上形成含矽層之製程。基板具有膜及遮罩。遮罩設於膜上且已圖形化。含矽層以使用含矽之前驅氣體的電漿處理形成。含矽層含有矽、碳、及氮。含矽層之材料不同於膜之材料。蝕刻方法更包含進行膜之電漿蝕刻的製程。在從於基板上形成含矽層之製程的開始時間點至進行膜之電漿蝕刻的製程之結束時間點為止的期間,將基板配置於減壓之環境下。
[發明之效果]
根據一個例示之實施形態,可於遮罩上形成不同於氧化矽層之層來蝕刻膜。
[用以實施發明之形態]
以下,就各種例示之實施形態作說明。
在一個例示之實施形態中,提供膜之蝕刻方法。蝕刻方法包含於基板上形成含矽層之製程。基板具有膜及遮罩。遮罩設於膜上且已圖形化。含矽層以使用含矽之前驅氣體的電漿處理形成。含矽層含有矽、碳、及氮。含矽層之材料不同於膜之材料。蝕刻方法更包含進行膜之電漿蝕刻的製程。在從於基板上形成含矽層之製程的開始時間點至進行膜之電漿蝕刻的製程之結束時間點為止的期間,將基板配置於減壓之環境下。
在上述實施形態之蝕刻方法,形成於遮罩上之含矽層含有矽、碳、及氮。因而,可於遮罩上形成不同於氧化矽層之層來蝕刻膜。
在一個例示之實施形態中,前驅氣體亦可為胺基矽烷系氣體。
在一個例示之實施形態中,形成含矽層之製程亦可包含使用含有前驅氣體與稀釋該前驅氣體之氣體的混合氣體之電漿處理。
在一個例示之實施形態中,形成含矽層之製程包含反覆進行一序列之製程。該序列包括下述步驟,前述步驟係在第1期間、接續於該第1期間之第2期間、接續於該第2期間之第3期間,將稀釋前驅氣體之氣體供應至基板。該序列包括在第1期間及第2期間,將前驅氣體供應至基板之步驟。該序列包括下述步驟,前述步驟係在第2期間及第3期間,供給射頻電力,以在第2期間,從前驅氣體及稀釋前驅氣體之氣體形成電漿,在第3期間,從稀釋前驅氣體之氣體形成電漿。
在一個例示之實施形態中,形成含矽層之製程及進行膜之電漿蝕刻的製程亦可使用單一電漿處理裝置執行。在從形成含矽層之製程的開始時間點至進行膜之電漿蝕刻的製程之結束時間點為止的期間,可將基板配置於單一電漿處理裝置之腔室內。
在一個例示之實施形態中,在形成含矽層之製程使用的第1電漿處理裝置與在進行膜之電漿蝕刻的製程使用之第2電漿處理裝置亦可藉由真空搬送系統連接。在執行形成含矽層之製程當中,將基板配置於第1電漿處理裝置之腔室內。在執行形成含矽層之製程後,執行進行膜之電漿蝕刻的製程前,將基板僅藉由真空搬送系統從第1電漿處理裝置搬送至第2電漿處理裝置。在執行進行膜之電漿蝕刻的製程當中,將基板配置於第2電漿處理裝置之腔室內。
在一個例示之實施形態中,在形成含矽層之製程,可將基板之溫度設定為150℃以下之溫度。根據此實施形態,可使形成含矽層時之基板的溫度與蝕刻膜時之基板的溫度之差減少。
在一個例示之實施形態中,含矽層之骨架亦可未具有矽與氧之鍵結。在一個例示之實施形態中,膜亦可為矽氧化膜。由於在含矽層不曝露於大氣下進行,故可抑制含矽層之氧化。當膜為矽氧化膜時,可抑制膜的電漿蝕刻之際的含矽層之蝕刻。
在另一例示之實施形態中,提供用於膜之蝕刻的電漿處理裝置。電漿處理裝置包含腔室、氣體供給部、射頻電源及控制部。氣體供給部連接於腔室。射頻電源構造成供給射頻電力,以從腔室內之氣體形成電漿。控制部構造成控制氣體供給部及射頻電源。控制部將氣體供給部控制成將含矽之前驅氣體供應至腔室內,並將射頻電源控制成供給射頻電力,以於基板上形成含矽層。基板具有膜及遮罩。遮罩設於膜上且已圖形化。含矽層含有矽、碳、及氮,由不同於膜之材料的材料形成。控制部,為了進行膜之電漿蝕刻,而控制氣體供給部以將處理氣體供應至腔室內,並控制射頻電源以供給射頻電力以進行膜之電漿蝕刻。
在又另一例示之實施形態中,提供用於膜之蝕刻的處理系統。處理系統包含第1電漿處理裝置、第2電漿處理裝置、真空搬送系統及控制部。真空搬送系統構造成在第1電漿處理裝置與第2電漿處理裝置之間搬送基板。控制部構造成控制第1電漿處理裝置、第2電漿處理裝置、及真空搬送系統。第1電漿處理裝置及第2電漿處理裝置分別具有腔室、氣體供給部、及射頻電源。氣體供給部連接於腔室。射頻電源構造成供給射頻電力,以從腔室內之氣體形成電漿。控制部將第1電漿處理裝置之氣體供給部控制成將含矽之前驅氣體供應至第1電漿處理裝置之腔室內,並將第1電漿處理裝置之射頻電源控制成供給射頻電力,以於基板上形成含矽層。基板具有膜及遮罩。遮罩設於膜上且已圖形化。含矽層含有矽、碳、及氮,由不同於膜之材料的材料形成。控制部,為了進行膜之電漿蝕刻,而控制第2電漿處理裝置之氣體供給部以將處理氣體供應至第2電漿處理裝置之腔室內,並控制第2電漿處理裝置之射頻電源以供給射頻電力。
以下,參照圖式,就各種例示之實施形態作說明。此外,在各圖式中對同一或相當之部分附上同一符號。
圖1係一個例示之實施形態的蝕刻方法之流程圖。圖1所示之蝕刻方法(以下稱為「方法MT」)係為了基板之膜的蝕刻而執行。在方法MT蝕刻之基板的膜由不同於後述含矽層之材料的材料形成。在方法MT蝕刻之基板的膜只要可對含矽層選擇性地蝕刻,可由任何材料形成。在方法MT蝕刻之基板的膜為例如矽氧化膜、聚矽膜、氮化矽膜、或碳膜。
圖2(c)係一例之基板的部分放大截面圖。圖2(c)所示之基板W具有矽氧化膜OSF及遮罩MK。基板W亦可更具有基底區域UR。矽氧化膜OSF係在方法MT蝕刻之膜的一例。矽氧化膜OSF設於基底區域UR上。遮罩MK設於矽氧化膜OSF上。遮罩MK已圖形化。即,遮罩MK提供一個以上之開口。遮罩MK之一個以上的開口使矽氧化膜OSF露出。遮罩MK只要由不同於矽氧化膜之材料形成,可由一個以上之任何材料形成。又,遮罩MK可由單一膜或多層膜形成。
在一實施形態中,方法MT使用單一電漿處理裝置執行。圖3係概略地顯示可用於圖1所示之蝕刻方法的執行之一例的電漿處理裝置之圖。圖3所示之電漿處理裝置1係電容耦合型電漿處理裝置。電漿處理裝置1包含腔室10。腔室10於其內部提供內部空間10s。
腔室10包含腔室本體12。腔室本體12呈大約圓筒形狀。於腔室本體12之內側提供了內部空間10s。腔室本體12由鋁這樣的導體形成。腔室本體12有接地。腔室本體12之內壁面施行了具耐腐蝕性之膜。具耐腐蝕性之膜可為由氧化鋁、氧化釔這樣的陶瓷形成之膜。
於腔室本體12之側壁形成有通路12p。基板W於在內部空間10s與腔室10的外部之間搬送時,通過通路12p。通路12p可以閘閥12g開關。閘閥12g沿著腔室本體12之側壁而設。
於腔室本體12之底部上設有支撐部13。支撐部13由絕緣材料形成。支撐部13呈大約圓筒形狀。支撐部13在內部空間10s中從腔室本體12之底部延伸至上方。支撐部13支撐基板支撐器14。基板支撐器14構造成在腔室10內、即內部空間10s中,支撐基板W。
基板支撐器14具有下部電極18及靜電吸盤20。下部電極18及靜電吸盤20設於腔室10內。基板支撐器14可更具有電極板16。電極板16由例如鋁這樣的導體形成,呈大約圓盤形狀。下部電極18設於電極板16上。下部電極18由例如鋁這樣的導體形成,呈大約圓盤形狀。下部電極18電性連接於電極板16。
靜電吸盤20設於下部電極18上。可於靜電吸盤20之上面上載置基板W。靜電吸盤20具有本體及電極。靜電吸盤20之本體由介電體形成。靜電吸盤20之電極係膜狀電極,設於靜電吸盤20之本體內。靜電吸盤20之電極藉由開關20s連接於直流電源20p。當對靜電吸盤20之電極施加來自直流電源20p之電壓時,在靜電吸盤20與基板W之間產生靜電引力。可以所產生之靜電引力將基板W吸引至靜電吸盤20,並以靜電吸盤20保持。
於基板支撐器14上配置邊緣環FR。邊緣環FR並未限定,可由矽、碳化矽、或石英形成。在腔室10內進行基板W之處理時,將基板W配置於靜電吸盤20上且以邊緣環FR包圍之區域內。
於下部電極18之內部設有流路18f。將熱交換媒體(例如冷媒)從冷卻單元22經由配管22a供應至流路18f。冷卻單元22設於腔室10之外部。使供應至流路18f之熱交換媒體經由配管22b返回至冷卻單元22。在電漿處理裝置1,以熱交換媒體與下部電極18之熱交換調整載置於靜電吸盤20上之基板W的溫度。
電漿處理裝置1可更包含氣體供給管路24。氣體供給管路24將傳熱氣體(例如He氣體)供應至靜電吸盤20之上面與基板W的背面之間。從傳熱氣體供給機構將傳熱氣體供應至氣體供給管路24。
電漿處理裝置1更包含上部電極30。上部電極30設於基板支撐器14之上方。上部電極30藉由構件32支撐於腔室本體12之上部。構件32由具絕緣性之材料形成。上部電極30與構件32封閉腔室本體12之上部開口。
上部電極30可包含頂板34及支撐體36。頂板34之下面係內部空間10s之側的下面,劃分出內部空間10s。頂板34由含矽材料形成。頂板34由例如矽或碳化矽形成。於頂板34形成有複數之氣體噴吐孔34a。複數之氣體噴吐孔34a將頂板34於其板厚方向貫穿。
支撐體36將頂板34支撐成裝卸自如。支撐體36由鋁這樣的導電性材料形成。於支撐體36之內部設有氣體擴散室36a。於支撐體36形成有複數之氣孔36b。複數之氣孔36b從氣體擴散室36a延伸至下方。複數之氣孔36b分別與複數之氣體噴吐孔34a連通。於支撐體36形成有氣體導入口36c。氣體導入口36c連接於氣體擴散室36a。於氣體導入口36c連接有氣體供給管38。
於氣體供給管38藉由閥群41、流量控制器群42、及閥群43連接有氣體源群40。氣體源群40、閥群41、流量控制器群42及閥群43構成氣體供給部GS。氣體源群40包含複數之氣體源。氣體源群40之複數的氣體源包含在方法MT利用之複數的氣體之源。閥群41及閥群43分別包含複數之開關閥。流量控制器群42包含複數之流量控制器。流量控制器群42之複數的流量控制器分別係質量流量控制器或壓力控制式流量控制器。氣體源群40之複數的氣體源分別藉由閥群41之對應的開關閥、流量控制器群42之對應的流量控制器、及閥群43之對應的開關閥連接於氣體供給管38。
在電漿處理裝置1,屏障46沿著腔室本體12之內壁面設成裝卸自如。屏障46亦設於支撐部13之外周。屏障46防止電漿處理之副產物附著於腔室本體12。屏障46例如藉於由鋁形成之構件的表面形成具耐腐蝕性之膜而構成。具耐腐蝕性之膜可為由氧化釔這樣的陶瓷形成之膜。
於支撐部13與腔室本體12的側壁之間設有擋板48。擋板48例如藉於由鋁形成之構件的表面形成具耐腐蝕性之膜而構成。具耐腐蝕性之膜可為由氧化釔這樣的陶瓷形成之膜。於擋板48形成有複數之貫穿孔。於擋板48之下方且為腔室本體12之底部設有排氣口12e。於排氣口12e藉由排氣管52連接有排氣裝置50。排氣裝置50具有壓力調整閥及渦輪分子泵這樣的真空泵。
電漿處理裝置1更包含第1射頻電源62及第2射頻電源64。第1射頻電源62係產生第1射頻電力之電源。第1射頻電力在一例中具有適合電漿之形成的頻率。第1射頻電力之頻率係例如27MHz~100MHz之範圍內的頻率。在一例中,第1射頻電力之頻率可為60MHz。第1射頻電源62藉由匹配器66及電極板16連接於上部電極30。匹配器66具有用以使第1射頻電源62之輸出阻抗與負載側(上部電極30側)之阻抗匹配的電路。此外,第1射頻電源62亦可藉由匹配器66連接於下部電極18。
第2射頻電源64係產生第2射頻電力之電源。第2射頻電力具有低於第1射頻電力之頻率的頻率。第2射頻電力可使用作為用以將離子引入至基板W之偏壓用射頻電力。第2射頻電力之頻率係例如400kHz~40MHz之範圍內的頻率。在一例中,第2射頻電力之頻率可為40MHz。第2射頻電源64藉由匹配器68及電極板16連接於下部電極18。匹配器68具有用以使第2射頻電源64之輸出阻抗與負載側(下部電極18側)之阻抗匹配的電路。此外,電漿處理裝置1亦可僅包含第1射頻電源62及第2射頻電源64中之任一者。
電漿處理裝置1更包含控制部MC。控制部MC可為具有處理器、記憶體這樣的記憶部、輸入裝置、顯示裝置、信號之輸入輸出介面等的電腦。控制部MC控制電漿處理裝置1之各部。在控制部MC,操作員可使用輸入裝置進行指令之輸入操作等,以管理電漿處理裝置1。又,在控制部MC,可以顯示裝置將電漿處理裝置1之運轉狀況可視化而顯示。再者,於控制部MC之記憶部儲存有控制程式及配方資料。控制程式以控制部MC之處理器執行,以在電漿處理裝置1執行各種處理。控制部MC之處理器執行控制程式,根據配方資料,控制電漿處理裝置1之各部,藉此,在電漿處理裝置1執行方法MT。
再參照圖1,就方法MT詳細說明。在以下之說明,以使用電漿處理裝置1將方法MT應用於基板W之情形為例,就方法MT作說明。此外,方法MT亦可應用於不同於例示之基板W的基板。又,在以下之說明中,亦就以控制部MC所行之電漿處理裝置1的各部之控制詳細說明。又,在以下之說明,除了圖1,還參照圖2(a)、圖2(b)、圖2(c)、圖4(a)、圖4(b)、圖5(a)、及圖5(b)。圖2(a)係形成遮罩前之一狀態的一例之基板的部分放大截面圖,圖2(b)係形成遮罩前之另一狀態的一例之基板的部分放大截面圖,圖2(c)係一例之基板的部分放大截面圖。圖4(a)係執行方法MT之製程ST1後的狀態之一例的基板之部分放大截面圖,圖4(b)係進行含矽層之回蝕刻後的狀態之一例的基板之部分放大截面圖。圖5(a)係執行方法MT之製程ST2後的狀態之一例的基板之部分放大截面圖,圖5(b)係去除遮罩後之狀態的一例之基板的部分放大截面圖。
如圖1所示,方法MT包含製程ST1及製程ST2。如圖2(a)所示,基板W亦可在執行製程ST1前之狀態下,更具有有機膜OF、反射防止膜ARF、及抗蝕遮罩RM。有機膜OF設於矽氧化膜OSF上。反射防止膜ARF設於有機膜OF上。反射防止膜ARF可含有矽。抗蝕遮罩RM設於反射防止膜ARF上。抗蝕遮罩RM已圖形化。即,抗蝕遮罩RM提供一個以上之開口。抗蝕遮罩RM使用例如微影技術而圖形化。
方法MT亦可更包含形成遮罩MK之製程。形成遮罩MK之製程於執行製程ST1前進行。在形成遮罩MK之製程,進行反射防止膜ARF之電漿蝕刻,以從圖2(a)所示之基板W形成遮罩MK。在執行反射防止膜ARF之電漿蝕刻當中,以靜電吸盤20保持基板W。在反射防止膜ARF之電漿蝕刻中,在腔室10內從處理氣體形成電漿。此處理氣體可含有CF4
氣體這樣的氟碳氣體。反射防止膜ARF以從電漿供給之化學物種蝕刻。反射防止膜ARF之電漿蝕刻的結果,如圖2(b)所示,將抗蝕遮罩RM之圖形轉印至反射防止膜ARF。
控制部MC將氣體供給部GS控制成將處理氣體供應至腔室10內,以進行反射防止膜ARF之電漿蝕刻。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以進行反射防止膜ARF之電漿蝕刻。控制部MC控制第1射頻電源62及/或第2射頻電源64,供給第1射頻電力及/或第2射頻電力,以進行反射防止膜ARF之電漿蝕刻。
在形成遮罩MK之製程,接著,進行有機膜OF之電漿蝕刻,以從圖2(b)所示之基板W形成遮罩MK。在執行有機膜OF之電漿蝕刻當中,以靜電吸盤20保持基板W。在有機膜OF之電漿蝕刻,在腔室10內從處理氣體形成電漿。此處理氣體係例如氫氣與氮氣之混合氣體。此處理氣體亦可為含氧氣體。有機膜OF以從電漿供給之化學物種蝕刻。有機膜OF之電漿蝕刻的結果,如圖2(c)所示,將反射防止膜ARF之圖形轉印至有機膜OF。結果,形成遮罩MK。在此例中,遮罩MK包含抗蝕遮罩RM、反射防止膜ARF、及有機膜OF。
控制部MC將氣體供給部GS控制成將處理氣體供應至腔室10內,以進行有機膜OF之電漿蝕刻。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以進行有機膜OF之電漿蝕刻。控制部MC控制第1射頻電源62及/或第2射頻電源64,供給第1射頻電力及/或第2射頻電力,以進行有機膜OF之電漿蝕刻。
在方法MT,執行製程ST1,以於具有遮罩MK之基板W上,如圖4(a)所示,形成含矽層SCF。含矽層SCF以使用含有矽之前驅氣體的電漿處理形成。含矽層SCF含有矽、碳、及氮。含矽層SCF由不同於在製程ST2蝕刻之膜(在一例中為矽氧化膜OSF)的材料之材料形成。在一實施形態中,含矽層SCF之骨架亦可未實質具有矽與氧之鍵結。含矽層SCF可為碳氮化矽膜(SiCN膜)。在一實施形態中,前驅氣體含有胺基矽烷系氣體。在一實施形態中,含矽層SCF亦可以使用前驅氣體與稀釋前驅氣體之氣體(以下稱為「稀釋氣體」)的混合氣體之電漿處理形成。稀釋氣體可為含氧氣體、含氫氣體、稀有氣體等。含氫氣體可含有氫氣(H2
氣體)及/或CH4
氣體這樣的碳化氫氣體。稀釋氣體可為使前驅氣體氧化之氣體,或者,亦可為還原前驅氣體之氣體。在製程ST1使用之混合氣體亦可更含有氬氣這樣的稀有氣體。
在一實施形態中,在製程ST1,將第1射頻電力之功率位準及/或第2射頻電力之功率位準設定為較低之功率位準,以抑制前驅氣體之過剩的解離。在一實施形態中,在製程ST1,為形成電漿,在第1射頻電力及第2射頻電力中僅供給第2射頻電力。在一實施形態中,在製程ST1,為抑制前驅氣體之過剩的解離,亦可將腔室10內之壓力設定為較高之壓力。
在另一實施形態中,前驅氣體亦可為SiCl4
氣體這樣的鹵化矽氣體。在此實施形態中,以除了前驅氣體外還更含有含氮氣體及含碳氣體之混合氣體,形成含矽層SCF。含氮氣體為例如NH3
氣體。含碳氣體可為CH4
氣體這樣的碳化氫氣體。
控制部MC將氣體供給部GS控制成將上述前驅氣體或混合氣體供應至腔室10內,以執行製程ST1。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以執行製程ST1。控制部MC控制第1射頻電源62及/或第2射頻電源64,供給第1射頻電力及/或第2射頻電力,以執行製程ST1。
以下,參照圖6。圖6係圖1所示之蝕刻方法的製程ST1之一例的隨時間變化圖。在圖6,橫軸顯示時間。在圖6,縱軸顯示在製程ST1使用之其他氣體的流量、即上述混合氣體中之前驅氣體以外的氣體之流量、前驅氣體之流量、及射頻電力。如圖6所示,一實施形態之製程ST1亦可包含反覆進行一序列SQ之製程。
序列SQ包含將其他氣體供應至基板W之步驟。其他氣體於前驅氣體為胺基矽烷系氣體時,含有上述稀釋氣體。其他氣體於前驅氣體為胺基矽烷系氣體時,可更含有上述稀有氣體。其他氣體於前驅氣體為鹵化矽氣體時,含有上述含氮氣體及含碳氣體。在第1期間P1、第2期間P2、及第3期間P3,將其他氣體供應至基板W。第2期間P2係接續第1期間P1之期間。第3期間P3係接續第2期間P2之期間。
序列SQ更包含在第1期間P1及第2期間P2,將上述前驅氣體供應至基板W之步驟。序列SQ更包含在第2期間P2及第3期間P3,供給第1射頻電力及/或第2射頻電力之步驟。在第2期間P2,在腔室10內從混合氣體形成電漿。在第3期間P3,在腔室10內,從其他氣體形成電漿。藉此序列SQ之反覆進行,可對基板W之表面形成含矽層SCF。又,藉序列SQ之反覆次數的設定,可調整含矽層SCF之膜厚。
此外,在序列SQ內之第2期間P2,亦可不供給第1射頻電力及第2射頻電力。即,在序列SQ內之第2期間P2,亦可不在腔室10內形成電漿。此時,在第2期間P2,前驅氣體吸附在基板W。或者,亦可在序列SQ內之第1期間P1~第3期間P3,在腔室10內形成電漿。藉調整在序列SQ內形成電漿之期間,可調整形成於基板W上之含矽層SCF的膜厚。又,藉調整第1期間P1及/或第2期間P2之腔室10內的氣體之壓力及/或第2射頻電力之功率位準,可調整形成含矽層SCF之處。舉例而言,藉將第1期間P1及/或第2期間P2之腔室10內的氣體之壓力設定為較高之壓力,可等向地形成含矽層SCF。又,亦可在第1期間P1及/或第2期間P2,將腔室10內之氣體的壓力設定為較低之壓力,將第2射頻電力之功率位準設定為較高之位準。此時,含矽層SCF易優先形成於遮罩MK之上面與劃分出遮罩MK之開口的底面。
在方法MT,接著,亦可如圖4(b)所示,進行含矽層SCF之回蝕刻。具體而言,去除在遮罩MK之上面上及矽氧化膜OSF之表面上延伸的含矽層SCF之部分區域,而保留沿著遮罩MK之側壁延伸的含矽層SCF之其他部分區域。
在執行含矽層SCF之回蝕刻當中,以靜電吸盤20保持基板W。在含矽層SCF之回蝕刻,在腔室10內從處理氣體形成電漿。此處理氣體含有例如CF4
氣體這樣的氟碳氣體。含矽層SCF之部分區域以從電漿供給之化學物種蝕刻。
控制部MC將氣體供給部GS控制成將處理氣體供應至腔室10內,以進行含矽層SCF之回蝕刻。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以進行含矽層SCF之回蝕刻。含矽層SCF之回蝕刻係異向性蝕刻。因而,控制部MC控制第1射頻電源62及第2射頻電源64,供給第1射頻電力及第2射頻電力,以進行含矽層SCF之回蝕刻。
在方法MT,接著,執行製程ST2。在製程ST2,進行基板之膜的電漿蝕刻。在執行製程ST2之當中,以靜電吸盤20保持基板。在製程ST2,在腔室10內從處理氣體形成電漿。在製程ST2使用之處理氣體可為可對含矽層SCF選擇性地蝕刻膜之任何氣體。在製程ST2,以從電漿供給之化學物種蝕刻基板之膜。
在一例之製程ST2,進行基板W之矽氧化膜OSF的電漿蝕刻。在執行製程ST2當中,以靜電吸盤20保持基板W。在製程ST2,在腔室10內從處理氣體形成電漿。此處理氣體含有C4
F6
氣體這樣的氟碳氣體。此處理氣體可更含有氧氣(O2
氣體)及氬氣這樣的稀有氣體。在製程ST2,以從電漿供給之化學物種蝕刻矽氧化膜OSF。矽氧化膜OSF之電漿蝕刻的結果,如圖5(a)所示,將遮罩MK之圖形轉印至矽氧化膜OSF。此外,在執行製程ST2當中,亦可蝕刻抗蝕遮罩RM及反射防止膜ARF。
控制部MC將氣體供給部GS控制成將處理氣體供應至腔室10內,以執行製程ST2。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以執行製程ST2。控制部MC控制第1射頻電源62及第2射頻電源64,供給第1射頻電力及第2射頻電力,以執行製程ST2。
方法MT亦可更包含去除遮罩MK之製程。以使用O2
氣體這樣的含氧氣體之電漿處理去除遮罩MK、即有機膜OF。結果,作成圖5(b)所示之基板W。
控制部MC將氣體供給部GS控制成將含氧氣體供應至腔室10內,以去除遮罩MK。控制部MC將排氣裝置50控制成將腔室10內之壓力控制為指定之壓力,以去除遮罩MK。控制部MC控制第1射頻電源62及/或第2射頻電源64,供給第1射頻電力及/或第2射頻電力,以去除遮罩MK。
在方法MT,形成於遮罩上之含矽層SCF含有矽、碳及氮。因而,可於遮罩上形成不同於氧化矽層之層來蝕刻膜。
在方法MT,至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,將基板W配置於減壓之環境下。即,在方法MT,至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,不將基板W曝露於大氣。換言之,至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,於配置有基板W之環境在不破壞真空下,處理基板W。在一實施形態中,至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,將基板W配置於單一電漿處理裝置1之腔室10內。
在一實施形態中,形成於遮罩MK上之含矽層SCF的骨架未實質具有矽與氧之鍵結。又,在不將含矽層SCF曝露於大氣下,進行矽氧化膜OSF之蝕刻。因而,可抑制含矽層SCF之氧化。是故,可抑制矽氧化膜OSF的電漿蝕刻之際的含矽層SCF之蝕刻。
在一實施形態之製程ST1,亦可將基板W之溫度設定為150℃以下之溫度。在執行製程ST2時,可將基板W之溫度設定為比執行製程ST1時之基板W的溫度低之溫度。雖然形成一般之含矽層時之基板的溫度設定為400℃這樣相當高之溫度,但在此實施形態中,形成含矽層SCF時之基板W的溫度低。因而,根據此實施形態,可使形成含矽層SCF時之基板W的溫度與蝕刻膜(在一例為矽氧化膜OSF)時之基板W的溫度之差減少。因而,可縮短從製程ST1移至製程ST2為止之時間。
以下,參照圖7。圖7係概略地顯示可用於圖1所示之蝕刻方法的執行之一例的處理系統之圖。至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,只要基板W配置於減壓之環境下,製程ST1與製程ST2亦可使用不同之電漿處理裝置執行。圖7所示之處理系統在此時可利用於方法MT之執行。
圖7所示之處理系統PS包含台2a~2d、容器4a~4d、載入模組LM、對準儀AN、載入載出模組LL1、LL2、操作模組PM1~PM6、搬送模組TF及控制部MC。此外,處理系統PS之台的個數、容器之個數、載入載出模組之個數可為二個以上之任何個數。又,操作模組之個數可為二個以上之任何個數。
台2a~2d沿著載入模組LM之一緣排列。容器4a~4d分別搭載於台2a~2d上。容器4a~4d各為稱為例如FOUP(Front Opening Unified Pod:前開式晶圓傳送盒)之容器。容器4a~4d各構造成於其內部收容基板W。
載入模組LM具有腔室。載入模組LM之腔室內的壓力設定為大氣壓。於載入模組LM之腔室內設有搬送裝置TU1。搬送裝置TU1係例如多關節機器人,可以控制部MC控制。搬送裝置TU1構造成在容器4a~4d各容器與對準儀AN之間、對準儀AN與載入載出模組LL1~LL2各模組之間、載入載出模組LL1~LL2各模組與容器4a~4d各容器之間搬送基板W。對準儀AN連接於載入模組LM。對準儀AN構造成進行基板W之位置的調整(位置之校準)。
載入載出模組LL1及載入載出模組LL2各設於載入模組LM與搬送模組TF之間。載入載出模組LL1及載入載出模組LL2各提供預備減壓室。
搬送模組TF藉由閘閥連接於載入載出模組LL1及載入載出模組LL2。搬送模組TF具有可減壓之搬送腔室TC。於搬送腔室TC內設有搬送裝置TU2。搬送裝置TU2係例如多關節機器人,以控制部MC控制。搬送裝置TU2構造成在載入載出模組LL1~LL2各模組與操作模組PM1~PM6各模組之間、及操作模組PM1~PM6中的任二個操作模組之間,搬送基板W。
操作模組PM1~PM6各為構造成進行專用基板處理之處理裝置。操作模組PM1~PM6中之一個操作模組係第1電漿處理裝置1a。操作模組PM1~PM6中之另一個操作模組係第2電漿處理裝置1b。在圖7所示之例中,操作模組PM1係第1電漿處理裝置1a,操作模組PM2係第2電漿處理裝置1b。在一實施形態中,第1電漿處理裝置1a及第2電漿處理裝置1b可各為與電漿處理裝置1相同之電漿處理裝置。
上述搬送模組TF構成真空搬送系統。搬送模組TF構造成在第1電漿處理裝置1a與第2電漿處理裝置1b之間搬送基板。
控制部MC構造成在處理系統PS,控制該處理系統PS之各部、例如第1電漿處理裝置1a、第2電漿處理裝置1b、搬送模組TF。
用以執行製程ST1之第1電漿處理裝置1a的各部之以控制部MC所行的控制與上述用以執行製程ST1之電漿處理裝置1的各部之以控制部MC所行的控制相同。具體而言,控制部MC將第1電漿處理裝置1a之氣體供給部GS控制成將上述前驅氣體或混合氣體供應至第1電漿處理裝置1a之腔室10內,以執行製程ST1。又,控制部MC將第1電漿處理裝置1a之排氣裝置50控制成將第1電漿處理裝置1a之腔室10內的壓力控制為指定之壓力,以執行製程ST1。再者,控制部MC控制第1電漿處理裝置1a之第1射頻電源62及/或第1電漿處理裝置1a之第2射頻電源64,供給第1射頻電力及第2射頻電力,以執行製程ST1。
控制部MC於執行製程ST1後,執行製程ST2前,藉由搬送模組TF之減壓的腔室將基板W從第1電漿處理裝置1a之腔室10的內部空間10s搬送至第2電漿處理裝置1b之腔室10的內部空間10s。控制部MC控制搬送模組TF,以進行此搬送。在方法MT使用處理系統PS時,亦至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,不將基板W曝露於大氣。換言之,至少在從製程ST1之開始時間點至製程ST2之結束時間點為止的期間,於配置有基板W之環境在不破壞真空下,處理基板W。
用以執行製程ST2之第2電漿處理裝置1b的各部之以控制部MC所行的控制與上述用以執行製程ST2之電漿處理裝置1的各部之以控制部MC所行的控制相同。具體而言,控制部MC將第2電漿處理裝置1b之氣體供給部GS控制成將處理氣體供應至第2電漿處理裝置1b之腔室10內,以執行製程ST2。又,控制部MC將第2電漿處理裝置1b之排氣裝置50控制成將第2電漿處理裝置1b之腔室10內的壓力控制為指定之壓力,以執行製程ST2。再者,控制部MC控制第2電漿處理裝置1b之第1射頻電源62及第2電漿處理裝置1b之第2射頻電源64,供給第1射頻電力及第2射頻電力,以執行製程ST2。
此外,為進行反射防止膜ARF之電漿蝕刻,亦可將第1電漿處理裝置1a及第2電漿處理裝置1b中其中一者之各部與電漿處理裝置1之各部同樣地控制。又,為進行有機膜OF之電漿蝕刻,亦可將第1電漿處理裝置1a及第2電漿處理裝置1b中其中一者之各部與電漿處理裝置1之各部同樣地控制。再者,為進行含矽層SCF之回蝕刻,亦可將第1電漿處理裝置1a及第2電漿處理裝置1b中其中一者之各部與電漿處理裝置1之各部同樣地控制。又,為去除遮罩MK,亦可將第1電漿處理裝置1a及第2電漿處理裝置1b中其中一者之各部與電漿處理裝置1之各部同樣地控制。反射防止膜ARF之電漿蝕刻及有機膜OF之電漿蝕刻亦可使用有別於第1電漿處理裝置1a及第2電漿處理裝置1b之電漿處理裝置執行。又,含矽層SCF之回蝕刻及反射防止膜ARF之電漿蝕刻亦可使用有別於第1電漿處理裝置1a及第2電漿處理裝置1b之電漿處理裝置執行。
以上,說明了各種例示之實施形態,亦可不限於上述例示之實施形態,進行各樣省略、置換、及變更。又,可組合不同之實施形態的要件,形成其他實施形態。
舉例而言,在方法MT之執行使用的一個以上之電漿處理裝置亦可各為任何類型之電漿處理裝置。該種電漿處理裝置亦可為感應耦合型電漿處理裝置或使用微波這樣的表面波以形成電漿之電漿處理裝置。又,第1電漿處理裝置1a及第2電漿處理裝置1b亦可為彼此不同之類型的電漿處理裝置。
以下,就為了評價方法MT而進行之實驗作說明。在實驗中,準備了於矽膜上具有由矽氧化膜形成的線寬線距圖形之試樣。試樣之直徑為300mm。接著,使用處理系統PS,將製程ST1及製程ST2應用於該試樣。在實驗中,使用第1電漿處理裝置1a進行製程ST1,使用第2電漿處理裝置1b,進行製程ST2。在實驗中,從製程ST1之開始時間點至製程ST2之結束時間點,未將試樣曝露於大氣。即,在實驗中,從製程ST1移至製程ST2之際,僅藉由搬送模組TF之減壓的腔室內之空間,將該試樣從第1電漿處理裝置1a搬送至第2電漿處理裝置1b。
又,為比較而進行了比較實驗。在比較實驗,準備與上述試樣相同之試樣,使用第1電漿處理裝置1a,將製程ST1應用於該試樣後,將該試樣曝露於大氣,此後,使用第2電漿處理裝置1b,將製程ST2應用於該試樣。
以下,顯示實驗及比較實驗各自之製程ST1及製程ST2的條件。
>製程ST1之條件>
•胺基矽烷系氣體:20sccm
•H2
氣體:400sccm
•氬氣:800sccm
•腔室10內之壓力:700mTorr(93.33Pa)
•第1射頻電力:0W
•第2射頻電力:40MHz、30W
•試樣之溫度:120℃
>製程ST2之條件>
•C4
F6
氣體:2.7sccm
•O2
氣體:2.5sccm
•氬氣:1000sccm
•腔室10內之壓力:30mTorr(4Pa)
•第1射頻電力:40MHz、350W
•第2射頻電力:13MHz、0W
•試樣之溫度:60℃
在實驗及比較實驗中,取得了執行製程ST2後之試樣的圖像(SEM圖像)。圖8(a)係處理前之試樣的圖像,圖8(b)係比較實驗之應用製程ST2後的試樣之圖像,圖8(c)係實驗之應用製程ST2後的試樣之圖像。比較圖8(a)及圖8(b),即清楚明白,在比較實驗中,藉製程ST2之執行,矽氧化膜之線的膜厚大為減少。此係因由於執行製程ST1後,執行製程ST2前,將試樣曝露於大氣,故在製程ST1形成之含矽層氧化。另一方面,比較圖8(a)及圖8(c),即清楚明白,在實驗中,矽氧化膜之線的膜厚幾乎未減少。此係因在製程ST1形成之含矽層未於執行製程ST2前氧化,而在執行製程ST2當中,保護了矽氧化膜之線。
又,在另一實驗,使用電漿處理裝置1,於氧化矽製晶圓上形成了含矽層。此含矽層係在前述MT之ST1形成的膜之一例。於以下顯示含矽層之形成條件。
>含矽層之形成條件>
•胺基矽烷系氣體:100sccm
•H2
氣體:400sccm
•氬氣:500sccm
•腔室10內之壓力:500mTorr(87.5Pa)
•第1射頻電力:60MHz、300W
•第2射頻電力:0W
•晶圓之溫度:80℃
接著,在大氣中使用X射線光電子能譜法,取得了所形成之含矽層的Si-2p能譜。圖9係顯示在另一實驗作成之含矽層的X射線光電子能譜法之Si-2p能譜的圖。又,於圖9除了含矽層之Si-2p能譜,還顯示氧化矽(SiO2
)、氮化矽(SiN)、碳化矽(SiC)、及多晶矽各自之Si-2p能譜。如圖9所示,所作成之含矽層於氧化矽之能譜與氮化矽的能譜之間具有能譜。又,所作成之含矽層具有不同於氧化矽、氮化矽、碳化矽、多晶矽各自之能譜的能譜。因而,確認了可以上述形成條件形成由不同於氧化矽、氮化矽、碳化矽、多晶矽之材料形成的含矽層。
從以上之說明應可理解本揭示之各種實施形態係為了說明而在本說明書說明,在不脫離本揭示之範圍及主旨下,可進行各種變更。因而,揭示於本說明書之各種實施形態並非意在限定,真正的範圍及主旨以附加之申請專利範圍顯示。
1:電漿處理裝置
1a:第1電漿處理裝置
1b:第2電漿處理裝置
2a:台
2b:台
2c:台
2d:台
4a:容器
4b:容器
4c:容器
4d:容器
10:腔室
10s:內部空間
12:腔室本體
12e:排氣口
12g:閘閥
12p:通路
13:支撐部
14:基板支撐器
16:電極板
18:下部電極
18f:流路
20:靜電吸盤
20p:直流電源
20s:開關
22:冷卻單元
22a:配管
22b:配管
24:氣體供給管路
30:上部電極
32:構件
34:頂板
34a:氣體噴吐孔
36:支撐體
36a:氣體擴散室
36b:氣孔
36c:氣體導入口
38:氣體供給管
40:氣體源群
41:閥群
42:流量控制器群
43:閥群
46:屏障
48:擋板
50:排氣裝置
52:排氣管
62:第1射頻電源
64:第2射頻電源
66:匹配器
68:匹配器
AN:對準儀
ARF:反射防止膜
FR:邊緣環
GS:氣體供給部
LM:載入模組
LL1:載入載出模組
LL2:載入載出模組
MC:控制部
MK:遮罩
MT:方法
OF:有機膜
OSF:矽氧化膜
PM1:操作模組
PM2:操作模組
PM3:操作模組
PM4:操作模組
PM5:操作模組
PM6:操作模組
PS:處理系統
P1:第1期間
P2:第2期間
P3:第3期間
RM:抗蝕遮罩
SCF:含矽層
SQ:序列
ST1:製程
ST2:製程
TC:搬送腔室
TF:搬送模組
TU1:搬送裝置
TU2:搬送裝置
UR:基底區域
W:基板
圖1係一個例示之實施形態的蝕刻方法之流程圖。
圖2(a)係形成遮罩前之一狀態的一例之基板的部分放大截面圖,圖2(b)係形成遮罩前之另一狀態的一例之基板的部分放大截面圖,圖2(c)係一例之基板的部分放大截面圖。
圖3係概略地顯示可用於圖1所示之蝕刻方法的執行之一例的電漿處理裝置之圖。
圖4(a)係執行方法MT之製程ST1後的狀態之一例的基板之部分放大截面圖,圖4(b)係進行含矽層之回蝕刻後的狀態之一例的基板之部分放大截面圖。
圖5(a)係執行方法MT之製程ST2後的狀態之一例的基板之部分放大截面圖,圖5(b)係去除遮罩後之狀態的一例之基板的部分放大截面圖。
圖6係圖1所示之蝕刻方法的製程ST1之一例的隨時間變化圖。
圖7係概略地顯示可用於圖1所示之蝕刻方法的執行之一例的處理系統之圖。
圖8(a)係處理前之試樣的圖像,圖8(b)係比較實驗之應用製程ST2後的試樣之圖像,圖8(c)係實驗之應用製程ST2後的試樣之圖像。
圖9係顯示在另一實驗作成之含矽層的X射線光電子能譜法之Si-2p能譜的圖。
MT:方法
ST1:製程
ST2:製程
Claims (15)
- 一種蝕刻方法,其為膜之蝕刻方法,包含下列製程:於基板上形成含矽層,該基板具有該膜與設於該膜上之已圖形化的遮罩,該膜係矽氧化膜、聚矽膜、氮化矽膜、或碳膜;及進行該膜之電漿蝕刻;該含矽層以使用含矽之前驅氣體的電漿處理形成,含有矽、碳、及氮,該含矽層之材料不同於該膜之材料;在從於基板上形成含矽層之該製程的開始時間點至進行該膜之電漿蝕刻的該製程之結束時間點為止的期間,將該基板配置於減壓之環境下;形成含矽層之該製程包含反覆進行一序列之製程,該序列包括下列步驟:在第1期間、接續於該第1期間之第2期間、接續於該第2期間之第3期間,將稀釋該前驅氣體之氣體供應至該基板;在該第1期間及該第2期間,將該前驅氣體供應至該基板;在該第2期間及該第3期間供給射頻電力,以在該第2期間從該前驅氣體及稀釋該前驅氣體之該氣體形成電漿,並在該第3期間從稀釋該前驅氣體之該氣體形成電漿。
- 如請求項1之蝕刻方法,其中,該前驅氣體係胺基矽烷系氣體。
- 如請求項1或2之蝕刻方法,其中,在形成含矽層之該製程,進行使用含有該前驅氣體與稀釋該前驅氣體之氣體的混合氣體之該電漿處理。
- 如請求項1或2之蝕刻方法,其中,形成含矽層之該製程及進行該膜之電漿蝕刻的該製程使用單一電漿處理裝置執行,在從於基板上形成含矽層之該製程的開始時間點至進行該膜之電漿蝕刻的該製程之結束時間點為止的期間,將該基板配置於該單一電漿處理裝置之腔室內。
- 如請求項1或2之蝕刻方法,其中,在形成含矽層之該製程所使用的第1電漿處理裝置,與在進行該膜之電漿蝕刻的該製程使用之第2電漿處理裝置,係藉由真空搬送系統連接,在執行形成含矽層之該製程當中,將該基板配置於該第1電漿處理裝置之腔室內,在執行形成含矽層之該製程之後,且在執行進行該膜之電漿蝕刻的該製程之前,將該基板僅藉由該真空搬送系統從該第1電漿處理裝置搬送至該第2電漿處理裝置,在進行該膜之電漿蝕刻的該製程之執行中,將該基板配置於該第2電漿處理裝置之腔室內。
- 如請求項1或2之蝕刻方法,其中,在形成含矽層之該製程,將該基板之溫度設定為150℃以下之溫度。
- 如請求項1或2之蝕刻方法,其中,該含矽層之骨架未具有矽與氧之鍵結。
- 如請求項1或2之蝕刻方法,其中,該膜係矽氧化膜。
- 如請求項1或2之蝕刻方法,其中,該膜係矽氧化膜、聚矽膜、或碳膜。
- 一種電漿處理裝置,用於作為矽氧化膜、聚矽膜、氮化矽膜、或碳膜之膜之蝕刻,包含:腔室;氣體供給部,連接於該腔室;射頻電源,供給射頻電力,以從該腔室內之氣體形成電漿;及控制部,控制該氣體供給部及該射頻電源;該控制部,為了在具有該膜及設於該膜上之已圖形化的遮罩之基板上形成含有矽、碳、及氮且由不同於該膜之材料的材料所形成之含矽層,而控制該氣體供給部及該射頻電源,以反覆進行一序列,該序列包括下列步驟:在第1期間、接續於該第1期間之第2期間、接續於該第2期間之第3期間,將稀釋含矽之前驅氣體之氣體供應至該腔室內;在該第1期間及該第2期間,將該前驅氣體供應至該腔室內;在該第2期間及該第3期間供給射頻電力,以在該第2期間於該腔室內從該前驅氣體及稀釋該前驅氣體之該氣體形成電漿,並在該第3期間於該腔室內從稀釋該前驅氣體之該氣體形成電漿;該控制部,為了進行該膜之電漿蝕刻,而控制該氣體供給部以將處理氣體供應至該腔室內,並控制該射頻電源以供給該射頻電力。
- 如請求項10之電漿處理裝置,其中,該膜係矽氧化膜、聚矽膜、或碳膜。
- 如請求項10之電漿處理裝置,其中,該膜係矽氧化膜。
- 一種處理系統,用於作為矽氧化膜、聚矽膜、氮化矽膜、或碳膜之膜之蝕刻,包含:第1電漿處理裝置;第2電漿處理裝置;真空搬送系統,在該第1電漿處理裝置與該第2電漿處理裝置之間搬送基板;及控制部,控制該第1電漿處理裝置、該第2電漿處理裝置、及該真空搬送系統;該第1電漿處理裝置及該第2電漿處理裝置分別具有:腔室;氣體供給部,連接於該腔室;射頻電源,供給射頻電力,以從該腔室內之氣體形成電漿;該控制部,為了在具有該膜及設於該膜上之已圖形化的遮罩之基板上形成含有矽、碳、及氮且由不同於該膜之材料的材料所形成之含矽層,而控制該第1電漿處理裝置之該氣體供給部及該第1電漿處理裝置之該射頻電源,以反覆進行一序列,該序列包括下列步驟: 在第1期間、接續於該第1期間之第2期間、接續於該第2期間之第3期間,將稀釋含矽之前驅氣體之氣體供應至該第1電漿處理裝置之該腔室內;在該第1期間及該第2期間,將該前驅氣體供應至該第1電漿處理裝置之該腔室內;在該第2期間及該第3期間供給射頻電力,以在該第2期間於該第1電漿處理裝置之該腔室內從該前驅氣體及稀釋該前驅氣體之該氣體形成電漿,並在該第3期間於該第1電漿處理裝置之該腔室內從稀釋該前驅氣體之該氣體形成電漿;該控制部控制該真空搬送系統以將該基板從該第1電漿處理裝置搬送至該第2電漿處理裝置;該控制部,為了進行該膜之電漿蝕刻,而控制該第2電漿處理裝置之該氣體供給部以將處理氣體供應至該第2電漿處理裝置之該腔室內,並控制該第2電漿處理裝置之該射頻電源以供給該射頻電力。
- 如請求項13之處理系統,其中,該膜係矽氧化膜、聚矽膜、或碳膜。
- 如請求項13之處理系統,其中,該膜係矽氧化膜。
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TW201705310A (zh) * | 2015-04-27 | 2017-02-01 | 東京威力科創股份有限公司 | 被處理體之處理方法 |
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US11244804B2 (en) | 2022-02-08 |
US20200243298A1 (en) | 2020-07-30 |
US20220122802A1 (en) | 2022-04-21 |
KR20200094664A (ko) | 2020-08-07 |
JP2020123646A (ja) | 2020-08-13 |
TW202040686A (zh) | 2020-11-01 |
CN111508831A (zh) | 2020-08-07 |
JP7178918B2 (ja) | 2022-11-28 |
CN111508831B (zh) | 2024-03-26 |
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