JP7190988B2 - エッチング方法及び基板処理装置 - Google Patents
エッチング方法及び基板処理装置 Download PDFInfo
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- JP7190988B2 JP7190988B2 JP2019151424A JP2019151424A JP7190988B2 JP 7190988 B2 JP7190988 B2 JP 7190988B2 JP 2019151424 A JP2019151424 A JP 2019151424A JP 2019151424 A JP2019151424 A JP 2019151424A JP 7190988 B2 JP7190988 B2 JP 7190988B2
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- 238000005530 etching Methods 0.000 title claims description 84
- 238000000034 method Methods 0.000 title claims description 69
- 239000000758 substrate Substances 0.000 title claims description 53
- 239000007789 gas Substances 0.000 claims description 153
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 76
- 229910052796 boron Inorganic materials 0.000 claims description 76
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000011737 fluorine Substances 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 13
- 239000005049 silicon tetrachloride Substances 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 claims description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 description 23
- 239000006227 byproduct Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
一実施形態に係る基板処理装置1について、図1を用いて説明する。図1は、一実施形態に係る基板処理装置1の一例を示す断面模式図である。
次に、かかる構成の基板処理装置1を使用して従来のエッチング方法によりボロン含有膜をエッチングしたときの結果の一例について、図2を参照しながら説明する。その後、基板処理装置1を使用して一実施形態に係るエッチング方法によりボロン含有膜をエッチングしたときの結果の一例について、図3を参照しながら説明する。
<プロセス条件>
圧力 30mT(4.00Pa)
HFパワー 800W
LFパワー 4500W
HF、LFのDuty比 LF Duty13%、HF Duty50%
HF、LFのパルス周波数 2.0kHz
ガス種 塩素(Cl2) 150sccm
温度(静電チャック温度) 120℃
エッチング時間 240秒
なお、上記プロセス条件下でボロン含有膜110をエッチングする工程の前に、自然酸化膜の除去工程を実行する。自然酸化膜の除去工程は、三フッ化窒素(NF3)ガスと酸素(O2)ガスとをチャンバ10内に供給して約5秒間行う。これにより、基板上の自然酸化膜を除去できる。
図3を参照しながら、基板処理装置1を使用して一実施形態に係るエッチング方法によりボロン含有膜に形成されたホールHの形状について説明する。図3(a)は図2(b)と同一図であり、比較例として、図2(a)の基板に対して従来のエッチング方法によりエッチングを実行したときの結果の一例を示す図である。図3(b)は、図2(a)の基板に対して一実施形態に係るエッチング方法によりエッチングを実行したときの結果の一例を示す図である。
<プロセス条件>
ガス種 塩素(Cl2)150sccm、三フッ化窒素(NF3)10sccm、水素(H2)40sccm、四塩化ケイ素(SiCl4)5sccm、酸素(O2)10sccm
処理ガスのうち、三フッ化窒素ガスはフッ素含有ガスの一例であり、フッ素含有ガスは、これに限らず四フッ化炭素(CF4)ガスであってもよい。また、水素ガスは水素含有ガスの一例であり、水素含有ガスはこれに限らず臭化水素(HBr)ガスであってもよい。また、四塩化ケイ素ガスはシリコン含有ガスの一例であり、シリコン含有ガスはこれに限らず四フッ化シリコン(SiF4)ガスであってもよい。また、酸素は、酸素含有ガスの一例であり酸素含有ガスは、これに限らず二酸化炭素(CO2)ガスや硫化カルボニル(COS)ガスであってもよい。
図3(b)の一実施形態に係るエッチング方法の結果では、図3(a)の従来のエッチング方法の結果と比較して、マスク120に付着する反応副生物130を薄くすることができた。その理由は、三フッ化窒素ガス及び水素ガスの添加によりマスク120に付着した反応副生物130が三フッ化窒素ガス及び水素ガスと反応してエッチングされたか、又はマスク120に付着する前に三フッ化窒素ガス及び水素ガスと反応して除去されたためである。その結果、図3(b)に示すように、ボロン含有膜110に形成されたホールHのTOP CD(本実施形態のエッチング方法で形成されたホールHのTOP CDを「TOP CD2」と表記する。)を、TOP CD1と比べて広く制御できた。なお、本実施形態のエッチング方法で形成されたホールHの底部のCDであるBTM CDを「BTM CD2」と表記する。
次に、処理ガスに更に四塩化ケイ素ガス及び酸素ガスを含めた場合の作用及び効果について、図4を参照しながら説明する。図4(a)は、一実施形態に係るエッチング方法において、三フッ化窒素ガス及び水素ガスを添加し、四塩化ケイ素ガス及び酸素ガスを添加しなかった場合のエッチングの一例を示す。図4(b)は、一実施形態に係るエッチング方法において、三フッ化窒素ガス、水素ガス、四塩化ケイ素ガス及び酸素ガスを添加した場合のエッチングの一例を示す。
次に、一実施形態に係るエッチング方法のシーケンスについて、図5を参照して説明する。図5は、一実施形態に係るエッチング方法の一例を示すフローチャートである。本実施形態に係るエッチング方法は、制御部80により制御され、基板処理装置1において実行される。
10 チャンバ
14 載置台
16 電極プレート
18 基台
20 静電チャック
30 上部電極
34 天板
36 支持体
38 ガス供給管
40 ガスソース群
42 バルブ群
44 流量制御器群
46 シールド
48 バッフルプレート
70 電源
80 制御部
100 下地膜
110 ボロン含有膜
120 マスク
130 反応副生物
W 基板
Claims (9)
- ボロン膜又はボロン含有膜が形成された基板を準備する工程と、
塩素ガスとフッ素含有ガスと水素含有ガスとシリコン含有ガスと酸素含有ガスとから成る処理ガスを供給する工程と、
前記処理ガスのプラズマによりマスクを介して前記ボロン膜又はボロン含有膜をエッチングする工程と、
を有するエッチング方法。 - 前記マスクは、シリコン含有膜である、
請求項1に記載のエッチング方法。 - イオン引き込み用の高周波電力とプラズマ生成用の高周波電力とをこの順にパルス状に印加し、前記処理ガスのプラズマを生成する、
請求項1又は2に記載のエッチング方法。 - 前記フッ素含有ガスは三フッ化窒素(NF3)或いは四フッ化炭素(CF4)である、
請求項1~3のいずれか一項に記載のエッチング方法。 - 前記水素含有ガスは水素ガス(H2)或いは臭化水素ガス(HBr)である、
請求項1~4のいずれか一項に記載のエッチング方法。 - 前記シリコン含有ガスは四塩化ケイ素ガス(SiCl4)又は、四フッ化ケイ素ガス(SiF4)である、
請求項1~5のいずれか一項に記載のエッチング方法。 - 前記酸素含有ガスは酸素ガス(O2)、二酸化炭素ガス(CO2)又は硫化カルボニルガス(COS)である、
請求項1~6のいずれか一項に記載のエッチング方法。 - 前記処理ガスは塩素ガス(Cl2)、三フッ化窒素ガス(NF3)、水素ガス(H2)、四塩化ケイ素ガス(SiCl4)及び酸素ガス(O2)を含む、
請求項1~7のいずれか一項に記載のエッチング方法。 - チャンバと、ガス供給部と、制御部と、を有し、
前記制御部は、
前記チャンバ内にボロン膜又はボロン含有膜が形成された基板を準備する工程と、
前記ガス供給部から前記チャンバ内に塩素ガスとフッ素含有ガスと水素含有ガスとシリコン含有ガスと酸素含有ガスとから成る処理ガスを供給する工程と、
前記処理ガスのプラズマによりマスクを介して前記ボロン膜又はボロン含有膜をエッチングする工程と、を実行する、
基板処理装置。
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