JP6006643B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP6006643B2 JP6006643B2 JP2012553621A JP2012553621A JP6006643B2 JP 6006643 B2 JP6006643 B2 JP 6006643B2 JP 2012553621 A JP2012553621 A JP 2012553621A JP 2012553621 A JP2012553621 A JP 2012553621A JP 6006643 B2 JP6006643 B2 JP 6006643B2
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- vacuum
- modules
- load lock
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Description
[装置全体の構成]
[第3の真空搬送ロボットの具体的構成例]
[大気系の構成]
Opening Unified Pod)等のボックスまたはポッドとして構成されている。
[一実施例における装置全体の動作]
[他の実施形態または変形例]
12 チャンバ
15 ローダ・モジュール
16 ロードロック室
30 第1の真空搬送ロボット
32 第2の真空搬送ロボット
34 第3の真空搬送ロボット
60 第1の真空搬送及び処理部
62 第2の真空搬送及び処理部
64 第1の大気搬送ロボット
66 第2の大気搬送ロボット
84 大気搬送ロボット
LP1〜LP4 ロードポート
GV1〜GV4 ゲートバルブ
GVL1,GVL2,GVU1,GVU2 ゲートバルブ
DVL1,DVL2,DVU1,DVU2 ドアバルブ
HR1 左側水平搬送部
HR2 右側水平搬送部
VR1 左側水平搬送部
VR2 右側水平搬送部
TE1 第1の真空搬送エリア
TE2 第2の真空搬送エリア
TE3 第3の真空搬送エリア
TPL 1階移載位置
TPU 2階移載位置
Claims (17)
- 室内が減圧状態に保たれる真空搬送室と、
前記真空搬送室内に水平方向で分けられて設けられる第1および第2の真空搬送エリアと、
前記第1の真空搬送エリアに隣接して前記真空搬送室の周囲に配置された第1組のプロセス・モジュールおよび第1組のロードロック・モジュールと、
前記第2の真空搬送エリアに隣接して前記真空搬送室の周囲に配置された第2組のプロセス・モジュールと、
前記第1組のプロセス・モジュールおよび前記第1組のロードロック・モジュールにアクセスして、アクセス先の各モジュールと基板の受け渡しを行い、前記第1の真空搬送エリア内で基板を搬送する第1の真空搬送機構と、
前記第2組のプロセス・モジュールにアクセスして、アクセス先の各モジュールと基板の受け渡しを行い、前記第2の真空搬送エリア内で基板を搬送する第2の真空搬送機構と、
前記第1組のロードロック・モジュールよりも高い階または低い階に配置された第2組のロードロック・モジュールと、
前記真空搬送室内で前記第2組のロードロック・モジュールに隣接して設けられ、前記第2の真空搬送エリアに接続する第3の真空搬送エリアと、
前記第2組のロードロック・モジュールにアクセスしてアクセス先の各モジュールと基板の受け渡しを行うとともに、前記第3の真空搬送エリア内に設けられた第1の移載位置で前記第2の真空搬送機構と基板の受け渡しを行い、前記第3の真空搬送エリアで基板を搬送する第3の真空搬送機構と
を有する真空処理装置。 - 前記第2組のロードロック・モジュールは、前記第1組のロードロック・モジュールの上または下に配置される、請求項1に記載の真空処理装置。
- 前記第2組のロードロック・モジュールは、前記第1の真空搬送エリアの上または下に配置される、請求項1に記載の真空処理装置。
- 前記第2組のロードロック・モジュールは、前記第1組のロードロック・モジュールおよび前記第1の真空搬送エリアの上または下に跨って配置される、請求項1に記載の真空処理装置。
- 前記第3の真空搬送機構は、前記第3の真空搬送エリア内の前記第1の移載位置の上方または下方に設けられた第2の移載位置で互いに基板の受け渡しを行える水平移動可能な水平搬送部と昇降移動可能な昇降搬送部とを有し、
前記水平搬送部は、前記第2組のロードロック・モジュールと前記第2の移載位置との間で基板を搬送し、
前記昇降搬送部は、前記第1の移載位置と前記第2の移載位置との間で基板を搬送する、
請求項1に記載の真空処理装置。 - 前記水平搬送部は、水平な一方向のみで基板の搬送を行うための第1の直進移動機構を有する、請求項5に記載の真空処理装置。
- 前記水平搬送部は、基板を1枚単位で保持または支持できる搬送アームを有する、請求項5に記載の真空処理装置。
- 前記昇降搬送部は、鉛直方向のみで基板の搬送を行うための第2の直進移動機構を有する、請求項5に記載の真空処理装置。
- 前記昇降搬送部は、同時に2枚の基板を載置または支持できる一対のバッファを有する、請求項5に記載の真空処理装置。
- 前記第2組のロードロック・モジュールは、横に並んで配置される一対のロードロック・モジュールを含み、
前記第3の真空搬送機構は、前記横に並んで配置される一対のロードロック・モジュールにそれぞれ対応して、横に並んで設けられ各々独立に動作する一対の前記水平搬送部と、横に並んで設けられ各々独立に動作する一対の前記昇降搬送部とを有する、
請求項5に記載の真空処理装置。 - 多数の基板を一定間隔に並べて出し入れ可能に収納するカセットの投入または払い出しを行うために、前記第1組および第2組のロードロック・モジュールと対向して大気空間内の所定位置に設けられる第1のロードポートと、
前記第1のロードポートに置かれた第1のカセットといずれかの前記ロードロック・モジュールとの間で基板の搬送を行う第1の大気搬送機構と、
前記第1のロードポート上の前記第1のカセットと他のいずれかの前記ロードロック・モジュールとの間で基板の搬送を行う第2の大気搬送機構と
を有し、
前記第1および第2の大気搬送機構が、前記第1のカセットに対して基板の取り出しまたは基板の装入を1枚ずつ交互に行う、
請求項1に記載の真空処理装置。 - 前記第1の大気搬送機構は、前記第1のカセットと前記第1組のロードロック・モジュールとの間で基板の搬送を行い、
前記第2の大気搬送機構は、前記第1のカセットと前記第2組のロードロック・モジュールとの間で基板の搬送を行う、
請求項11に記載の真空処理装置。 - 前記第1の大気搬送機構が基板の取り出しまたは基板の装入のために前記第1のカセットにアクセスする間に、前記第2の大気搬送機構が基板の取り出しまたは基板の装入のために前記第2組のロードロック・モジュールにアクセスし、
前記第2の大気搬送機構が基板の取り出しまたは基板の装入のために前記第1のカセットにアクセスする間に、前記第1の大気搬送機構が基板の取り出しまたは基板の装入のために前記第1組のロードロック・モジュールにアクセスする、
請求項12に記載の真空処理装置。 - 大気空間内で前記第1のロードポートに隣接して設けられる第2のロードポートを更に有し、
前記第1および第2の大気搬送機構が、前記第2のロードポートに置かれた第2のカセットに対しても基板の取り出しまたは基板の装入を1枚ずつ交互に行う、
請求項11に記載の真空処理装置。 - 前記第1および第2の大気搬送機構の各々が、水平方向のスライド軸を持たない多関節ロボットを有する、請求項11に記載の真空処理装置。
- 前記第1組に属する全てのプロセス・モジュールおよび前記第2組に属する全てのプロセス・モジュールが同一の単一プロセスを繰り返し行う、請求項1記載の真空処理装置。
- 前記第1組のプロセス・モジュールおよび前記第2組のプロセス・モジュールが同一の複合プロセスを繰り返し行う、請求項1記載の真空処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011009859 | 2011-01-20 | ||
JP2011009859 | 2011-01-20 | ||
PCT/JP2012/000271 WO2012098871A1 (ja) | 2011-01-20 | 2012-01-18 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012098871A1 JPWO2012098871A1 (ja) | 2014-06-09 |
JP6006643B2 true JP6006643B2 (ja) | 2016-10-12 |
Family
ID=46515506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012553621A Active JP6006643B2 (ja) | 2011-01-20 | 2012-01-18 | 真空処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9443749B2 (ja) |
JP (1) | JP6006643B2 (ja) |
KR (1) | KR101744372B1 (ja) |
TW (1) | TWI571953B (ja) |
WO (1) | WO2012098871A1 (ja) |
Families Citing this family (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5060517B2 (ja) * | 2009-06-24 | 2012-10-31 | 東京エレクトロン株式会社 | インプリントシステム |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
JP5883232B2 (ja) * | 2011-03-26 | 2016-03-09 | 東京エレクトロン株式会社 | 基板処理装置 |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
JP2014093489A (ja) * | 2012-11-06 | 2014-05-19 | Tokyo Electron Ltd | 基板処理装置 |
WO2014080067A1 (en) * | 2012-11-23 | 2014-05-30 | Picosun Oy | Substrate loading in an ald reactor |
JP6058999B2 (ja) | 2012-12-11 | 2017-01-11 | 株式会社Screenセミコンダクターソリューションズ | 基板処理装置および基板処理方法 |
WO2014116681A2 (en) * | 2013-01-22 | 2014-07-31 | Brooks Automation, Inc. | Substrate transport |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US20140271097A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
KR101527901B1 (ko) * | 2013-10-10 | 2015-06-10 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 반송 방법 |
TWI658531B (zh) | 2013-11-04 | 2019-05-01 | 應用材料股份有限公司 | 具有增加的側面數量之傳送腔室、半導體裝置製造處理工具、及處理方法 |
JP6484563B2 (ja) * | 2013-12-26 | 2019-03-13 | コニカミノルタ株式会社 | 電子デバイスの印刷製造システム |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
KR101722915B1 (ko) * | 2014-10-13 | 2017-04-04 | 주식회사 테스 | 유기금속화학기상증착장치 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
CN106033737B (zh) * | 2015-03-16 | 2019-01-18 | 中微半导体设备(上海)有限公司 | 真空锁系统及基片传送方法 |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
CN106558520A (zh) * | 2015-09-29 | 2017-04-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片传输系统及晶片传输方法 |
JP6089082B1 (ja) * | 2015-09-29 | 2017-03-01 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
US10014196B2 (en) | 2015-10-20 | 2018-07-03 | Lam Research Corporation | Wafer transport assembly with integrated buffers |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
WO2018084214A1 (ja) * | 2016-11-02 | 2018-05-11 | 株式会社アルバック | 真空処理装置 |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
KR102035985B1 (ko) * | 2017-06-14 | 2019-10-23 | 가부시키가이샤 알박 | 진공 처리 장치 |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
CN108172531B (zh) * | 2017-12-20 | 2021-01-15 | 武汉华星光电半导体显示技术有限公司 | 刻蚀设备 |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
JP2019192892A (ja) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | 処理システムおよび処理方法 |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
JP7014055B2 (ja) * | 2018-06-15 | 2022-02-01 | 東京エレクトロン株式会社 | 真空処理装置、真空処理システム、及び真空処理方法 |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
CN109244186B (zh) * | 2018-09-19 | 2024-02-27 | 通威太阳能(安徽)有限公司 | 一种新型背钝化背膜正膜机台镀膜连体上下料装置及方法 |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
JP7210960B2 (ja) * | 2018-09-21 | 2023-01-24 | 東京エレクトロン株式会社 | 真空処理装置及び基板搬送方法 |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
JP7394554B2 (ja) * | 2019-08-07 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理システム |
CN113508456A (zh) * | 2020-02-05 | 2021-10-15 | 株式会社安川电机 | 搬运系统、搬运方法以及搬运装置 |
WO2021234928A1 (ja) * | 2020-05-21 | 2021-11-25 | 株式会社安川電機 | 搬送装置、搬送方法および搬送システム |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
US11935771B2 (en) | 2021-02-17 | 2024-03-19 | Applied Materials, Inc. | Modular mainframe layout for supporting multiple semiconductor process modules or chambers |
US11935770B2 (en) | 2021-02-17 | 2024-03-19 | Applied Materials, Inc. | Modular mainframe layout for supporting multiple semiconductor process modules or chambers |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135705A (ja) * | 1999-05-25 | 2001-05-18 | Applied Materials Inc | 半導体ウェーハ処理のためのデュアルバッファチャンバクラスタツール |
JP2004289036A (ja) * | 2003-03-25 | 2004-10-14 | Tadamoto Tamai | 真空処理装置 |
JP2006156762A (ja) * | 2004-11-30 | 2006-06-15 | Sumitomo Eaton Noba Kk | ウエハ処理装置及びウエハ処理方法並びにイオン注入装置 |
JP2007533167A (ja) * | 2004-04-16 | 2007-11-15 | アクセリス テクノロジーズ インコーポレーテッド | ワークピース処理システム |
JP2008028134A (ja) * | 2006-07-20 | 2008-02-07 | Kawasaki Heavy Ind Ltd | ウェハ移載装置および基板移載装置 |
JP2009064864A (ja) * | 2007-09-05 | 2009-03-26 | Hitachi High-Technologies Corp | 半導体処理装置 |
JP2009135294A (ja) * | 2007-11-30 | 2009-06-18 | Sokudo:Kk | 基板処理装置 |
JP2009260087A (ja) * | 2008-04-17 | 2009-11-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2009540613A (ja) * | 2006-06-15 | 2009-11-19 | アプライド マテリアルズ インコーポレイテッド | 複数レベルのロードロックチャンバ、移送チャンバ、及びこれにインターフェイスするのに適したロボット |
JP2010512026A (ja) * | 2006-12-06 | 2010-04-15 | アクセリス テクノロジーズ, インコーポレイテッド | 高生産性ウエハノッチアライメント装置 |
JP2010147207A (ja) * | 2008-12-18 | 2010-07-01 | Tokyo Electron Ltd | 真空処理装置及び真空搬送装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000195925A (ja) * | 1998-12-28 | 2000-07-14 | Anelva Corp | 基板処理装置 |
US20060156979A1 (en) * | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
JP4860167B2 (ja) * | 2005-03-30 | 2012-01-25 | 東京エレクトロン株式会社 | ロードロック装置,処理システム及び処理方法 |
JP5000627B2 (ja) * | 2008-11-27 | 2012-08-15 | 東京エレクトロン株式会社 | 基板処理システム |
TWI394224B (zh) * | 2009-02-24 | 2013-04-21 | Intevac Inc | 載送及處理基板之裝置與方法 |
JP5736687B2 (ja) * | 2009-10-06 | 2015-06-17 | 東京エレクトロン株式会社 | 基板処理装置 |
TW201123340A (en) * | 2009-11-12 | 2011-07-01 | Hitachi High Tech Corp | Vacuum processing system and vacuum processing method of semiconductor processing substrate |
-
2012
- 2012-01-18 KR KR1020137018956A patent/KR101744372B1/ko active IP Right Grant
- 2012-01-18 WO PCT/JP2012/000271 patent/WO2012098871A1/ja active Application Filing
- 2012-01-18 JP JP2012553621A patent/JP6006643B2/ja active Active
- 2012-01-18 US US13/980,474 patent/US9443749B2/en active Active
- 2012-01-19 TW TW101102219A patent/TWI571953B/zh active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135705A (ja) * | 1999-05-25 | 2001-05-18 | Applied Materials Inc | 半導体ウェーハ処理のためのデュアルバッファチャンバクラスタツール |
JP2004289036A (ja) * | 2003-03-25 | 2004-10-14 | Tadamoto Tamai | 真空処理装置 |
JP2007533167A (ja) * | 2004-04-16 | 2007-11-15 | アクセリス テクノロジーズ インコーポレーテッド | ワークピース処理システム |
JP2006156762A (ja) * | 2004-11-30 | 2006-06-15 | Sumitomo Eaton Noba Kk | ウエハ処理装置及びウエハ処理方法並びにイオン注入装置 |
JP2009540613A (ja) * | 2006-06-15 | 2009-11-19 | アプライド マテリアルズ インコーポレイテッド | 複数レベルのロードロックチャンバ、移送チャンバ、及びこれにインターフェイスするのに適したロボット |
JP2008028134A (ja) * | 2006-07-20 | 2008-02-07 | Kawasaki Heavy Ind Ltd | ウェハ移載装置および基板移載装置 |
JP2010512026A (ja) * | 2006-12-06 | 2010-04-15 | アクセリス テクノロジーズ, インコーポレイテッド | 高生産性ウエハノッチアライメント装置 |
JP2009064864A (ja) * | 2007-09-05 | 2009-03-26 | Hitachi High-Technologies Corp | 半導体処理装置 |
JP2009135294A (ja) * | 2007-11-30 | 2009-06-18 | Sokudo:Kk | 基板処理装置 |
JP2009260087A (ja) * | 2008-04-17 | 2009-11-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2010147207A (ja) * | 2008-12-18 | 2010-07-01 | Tokyo Electron Ltd | 真空処理装置及び真空搬送装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201243985A (en) | 2012-11-01 |
KR20140004132A (ko) | 2014-01-10 |
KR101744372B1 (ko) | 2017-06-07 |
TWI571953B (zh) | 2017-02-21 |
US20130302115A1 (en) | 2013-11-14 |
JPWO2012098871A1 (ja) | 2014-06-09 |
US9443749B2 (en) | 2016-09-13 |
WO2012098871A1 (ja) | 2012-07-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6006643B2 (ja) | 真空処理装置 | |
KR101624152B1 (ko) | 로드락 디자인 및 로드락을 사용하기 위한 방법 | |
JP3437734B2 (ja) | 製造装置 | |
US10204810B2 (en) | Linear vacuum robot with Z motion and articulated arm | |
US6257827B1 (en) | Apparatus and method for transporting substrates | |
KR101082261B1 (ko) | 기판처리장치 및 기판반송방법 | |
WO2012133218A1 (ja) | 基板処理装置 | |
US8277163B2 (en) | Substrate transfer apparatus, substrate process system, and substrate transfer method | |
US20140064886A1 (en) | System, architecture and method for simultaneous transfer and process of substrates | |
KR20100095371A (ko) | 기판 처리 장치 | |
KR102164404B1 (ko) | 기판 처리 장치 | |
TW201330158A (zh) | 真空處理裝置 | |
JP6306813B2 (ja) | モジュール式半導体処理システム | |
US20140119858A1 (en) | Semiconductor Device Manufacturing Line | |
TWI681490B (zh) | 載體搬送裝置及載體搬送方法 | |
JP2014060338A (ja) | 基板処理装置 | |
JP6031304B2 (ja) | 基板処理装置及び基板処理方法 | |
JP6562803B2 (ja) | 基板処理システム | |
JP5872880B2 (ja) | 基板処理装置、基板移載装置及び半導体装置の製造方法 | |
CN117337483A (zh) | 具有冗余度的工厂接口 | |
TW200915464A (en) | Compact substrate transport system with fast swap robot | |
JP2002043389A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160401 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20160415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160510 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160812 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160909 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6006643 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |