JP2010512650A - 乾燥フォトレジスト除去プロセスと装置 - Google Patents
乾燥フォトレジスト除去プロセスと装置 Download PDFInfo
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- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 claims 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
【解決手段】 積層膜の層にドーパントを注入し、除去された積層膜をアニールし、且つ注入された積層膜を除去する処理システムを提供する。高いドーパント濃度がフォトレジスト層に注入される場合、容易に除去されないことになるフォトレジスト層の表面上にクラスト層が形成する可能性がある。本明細書に記載される方法は、その表面上にこのようなクラストを持つフォトレジスト層を除去するのに効果がある。
【選択図】 図4
Description
[0001]本発明の実施形態は、一般的には、基板からフォトレジストを除去する方法とその実施のための装置に関する。本発明の実施形態は、また、イオンを注入し、且つフォトレジストを除去するシステムに関する。
[0002]集積回路は、基板(例えば、半導体ウエハ)上に形成される百万を超えるマイクロ電界効果型トランジスタ(例えば、相補型金属酸化物半導体(CMOS)電界効果トランジスタ)を含み、回路内で様々な機能を行うように協調することができるものである。回路製造中、フォトレジストを堆積させ、露光し、現像して、下に横たわる層をエッチングするのに用いられるマスクを生成させる。
[0010]本発明の上記特徴が詳細に理解され得るように、上で簡単にまとめられた本発明のより具体的な説明は、その一部が添付の図面に示される実施形態によって参照することができる。しかしながら、添付の図面は、本発明の典型的な実施形態のみを示しているので、その範囲を制限するものと考えられるべきでなく、本発明は他の等しく効果的な実施形態を許容してもよいことは留意されるべきである。
[0030]図3は、本発明の一実施形態の除去プロセス300の流れ図である。プロセス300は、チャンバ100に工作物200を導入することによってステップ302から始まる。ステップ304で、除去用ガスが遠隔プラズマ源142に導入することができる。ステップ306で、プラズマは、遠隔プラズマ源142からチャンバ100に導入される。存在する場合にはいかなるクラスト層206をも含む、フォトレジスト層204が、ステップ308で除去用溶液によって工作物から取り除かれる。
[0038]毎分7リットルの水素を90sccmの水蒸気と共に遠隔プラズマによって処理チャンバへ供給してホウ素が注入されたフォトレジストを取り除いた。ホウ素が注入されたフォトレジストとクラスト層を、毎分3000オングストロームの速度で取り除いた。
[0039]毎分7リットルの水素を2900sccmの水蒸気と共に遠隔プラズマ源によって処理チャンバへ供給して、ホウ素が注入されたフォトレジストを取り除いた。基板を120℃に維持し、チャンバの圧力を2トールに維持した。ホウ素が注入されたフォトレジストとクラスト層を、毎分約300オングストロームの速度で取り除いた。
[0040]250sccmのCF4と5000sccmのO2を遠隔プラズマ源によって供給して、ホウ素が注入されたフォトレジストを取り除いた。基板を220℃の温度に維持した。フォトレジストとクラスト層は60秒で完全に取り除いた。
[0041]従来の酸素除去方法を、ホウ素含有クラスト層を持つフォトレジストに用いた。プロセスは、取り除く速度がほぼ毎分0オングストロームであるようにフォトレジストとクラスト層を取り除かなかった。
Claims (20)
- フォトレジスト除去方法であって:
その上にフォトレジスト層を持つ基板を除去チャンバ内に位置決めするステップと;
水素ガスと、フッ素ガスと酸素ガスの少なくとも一つとから遠隔プラズマ源内にプラズマを形成させるステップと;
該遠隔プラズマ源からのプラズマと水蒸気を該チャンバに導入するステップと;
該基板から該フォトレジストを除去する(stripping)ステップと;
を含む、前記方法。 - 該フォトレジスト層が、除去前に注入プロセスにさらされる、請求項1に記載の方法。
- 除去された該基板をアニールするステップ;
を更に含む、請求項1に記載の方法。 - 該フォトレジストを持つ該基板を注入チャンバ内に配置し、該基板と該フォトレジスト層の間に配置された層にイオンを注入し、該フォトレジスト上にクラストを形成させるステップと;
該基板を該注入チャンバから搬送させるステップと;
該基板を該除去チャンバからアニールチャンバに搬送させるステップと;
該基板をアニールするステップと;
更に含む、請求項1に記載の方法。 - 該イオンが、ホウ素、リン、ヒ素、及びこれらの組み合わせからなる群より選ばれる、請求項4に記載の方法。
- 該クラスト層が、二つの炭素−炭素単結合によって一緒に結合される二つの芳香環を含む、請求項4に記載の方法。
- 除去する該ステップが、該フォトレジストを二原子の酸素、二酸化炭素、水、及び二原子の(diatomic)水素に変換する工程を含む、請求項1に記載の方法。
- 該除去するステップが、該基板をRF電流でバイアスさせる工程を含む、請求項1に記載の方法。
- フォトレジスト除去方法であって:
基板を処理チャンバに配置するステップであって、該基板がその上にフォトレジスト層を持つ、前記ステップと;
一つ以上のイオンを該フォトレジストと該基板の間に配置された層に注入するステップであって、注入する該ステップが、該フォトレジスト層の少なくとも一部からクラスト層を形成させる、前記ステップと;
遠隔プラズマ源内にプラズマを点火させるとともに該クラスト層を該プラズマにさらすステップと;
該クラスト層を水蒸気にさらすステップと;
該クラスト層と該フォトレジスト層を取り除く(removing)ステップと;
を含む、前記方法。 - 該クラスト層が、二つの炭素−炭素単結合によって一緒に結合される二つの芳香環を含む、請求項9に記載の方法。
- 注入された該イオンが、ホウ素を含み、該プラズマが、該遠隔プラズマ源に水素ガスを流し込むことにより点火される、請求項9に記載の方法。
- 該水蒸気の流量が、約80sccm〜約100sccmである、請求項11に記載の方法。
- 該水蒸気の流量が、約2800sccm〜約3000sccmである、請求項11に記載の方法。
- 注入された該イオンが、ホウ素を含み、該プラズマが、該遠隔プラズマ源に四フッ化炭素と酸素を流し込むことによって点火される、請求項9に記載の方法。
- 該四フッ化炭素の流量が、約225sccm〜約275sccmであり、該酸素の流量が、約4900sccm〜約5100sccmであり、該水蒸気の流量が、約325sccm〜約375sccmである、請求項14に記載の方法。
- 該イオンが、ホウ素、リン、ヒ素、及びこれらの組み合わせからなる群より選ばれる、請求項9に記載の方法。
- 除去する該ステップが、該フォトレジストを二原子の酸素と、二酸化炭素と、水と、二原子の水素に変換する工程を含む、請求項9に記載の方法。
- 該基板をアニールするステップを更に含む、請求項9に記載の方法。
- 処理システムであって:
搬送チャンバと;
該搬送チャンバと結合された注入チャンバと;
該搬送チャンバと結合された除去チャンバと;
該搬送チャンバと結合されたアニールチャンバと;
該搬送チャンバと結合されたファクトリインタフェースと;
該ファクトリインタフェースに結合された一つ以上のFOUPと;
を含む、前記システム。 - 該除去チャンバが、それに結合される遠隔プラズマ源を備える、請求項19に記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86955406P | 2006-12-11 | 2006-12-11 | |
PCT/US2007/087008 WO2008073906A2 (en) | 2006-12-11 | 2007-12-10 | Dry photoresist stripping process and apparatus |
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Publication Number | Publication Date |
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JP2010512650A true JP2010512650A (ja) | 2010-04-22 |
JP2010512650A5 JP2010512650A5 (ja) | 2010-12-02 |
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Country | Link |
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US (1) | US20080153306A1 (ja) |
JP (1) | JP2010512650A (ja) |
KR (1) | KR20090094368A (ja) |
CN (1) | CN101542693A (ja) |
TW (1) | TW200834265A (ja) |
WO (1) | WO2008073906A2 (ja) |
Cited By (1)
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WO2008073906A3 (en) | 2008-09-12 |
CN101542693A (zh) | 2009-09-23 |
US20080153306A1 (en) | 2008-06-26 |
KR20090094368A (ko) | 2009-09-04 |
TW200834265A (en) | 2008-08-16 |
WO2008073906A2 (en) | 2008-06-19 |
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