WO2008112673A2 - Dynamic temperature backside gas control for improved within-substrate processing uniformity - Google Patents
Dynamic temperature backside gas control for improved within-substrate processing uniformity Download PDFInfo
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- WO2008112673A2 WO2008112673A2 PCT/US2008/056478 US2008056478W WO2008112673A2 WO 2008112673 A2 WO2008112673 A2 WO 2008112673A2 US 2008056478 W US2008056478 W US 2008056478W WO 2008112673 A2 WO2008112673 A2 WO 2008112673A2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- This invention relates to the control of process uniformity across a substrate.
- the invention particularly relates to the control of the temperature and deformation of a substrate during the processing of the substrate, and adjustment of the gas pressure on the backside of the substrate.
- a reduction of variations in the CD, as well as variations in profile and side-wall angle (SWA), across the substrate can affect the uniform yield of high performance devices (i.e., speed, power consumption, etc.).
- depositions systems are required to deposit thin films of uniform thickness over both flat surfaces, such as the flat- field and the bottoms of structures, but also along the side- walls of high-aspect-ratio structures.
- patterning and etching systems are utilized to perform pattern etching, which comprises applying a thin layer of radiation-sensitive material, such as photoresist, to an upper surface of a substrate, patterning this thin layer of radiation-sensitive material using photolithography to form a pattern therein, and transferring the pattern to the underlying material film using an etching process.
- a thin layer of radiation-sensitive material such as photoresist
- the patterning of the radiation-sensitive material generally involves coating an upper surface of the substrate with a thin film of radiation-sensitive material (e.g., "photo-resist"), and then exposing the radiation-sensitive material to a geometric pattern of electro-magnetic (EM) radiation using, for example, a photolithography system, followed by the removal of the irradiated regions of the radiation-sensitive material (as in the case of positive photo-resist), or non-irradiated regions (as in the case of negative photo-resist) using a developing solvent. Thereafter, the pattern formed in the thin film of radiation-sensitive material is transferred to the underlying layers using an etching process, such as a dry plasma etching process.
- a thin film of radiation-sensitive material e.g., "photo-resist”
- EM electro-magnetic
- the plasma etch process generally involves positioning a semiconductor substrate with an overlying patterned, protective layer, for example a photoresist layer as described above, in a processing chamber. Once the substrate is positioned within the chamber, an ionizable, dissociative gas mixture is introduced within the chamber at a pre-specified flow rate, while a vacuum pump is adjusted to achieve an ambient process pressure.
- an ionizable, dissociative gas mixture is introduced within the chamber at a pre-specified flow rate, while a vacuum pump is adjusted to achieve an ambient process pressure.
- plasma is formed when a fraction of the gas species present are ionized by electrons heated in the presence of an alternating electric field which is created via the transfer of radio frequency (RF) power either inductively or capacitively, or microwave power using, for example, electron cyclotron resonance (ECR). Moreover, the heated electrons serve to dissociate some species of the ambient gas species and create reactant specie(s) suitable for the exposed surface etch chemistry.
- RF radio frequency
- ECR electron cyclotron resonance
- the heated electrons serve to dissociate some species of the ambient gas species and create reactant specie(s) suitable for the exposed surface etch chemistry.
- selected surfaces of the substrate are etched by the plasma. The process is adjusted to achieve appropriate conditions, including an appropriate concentration of desirable reactant and ion populations to etch various features (e.g., trenches, vias, contacts, etc.) in the selected regions of the substrate.
- substrate materials where etching is required include silicon dioxide (Si ⁇ 2 ), low-k dielectric materials
- the uniformity of process results across the substrate are affected by spatial variations in plasma density within the process space above the substrate, typically expressed as a spatial distribution of electron density n e (r, ⁇ ), spatial variations in process chemistry (i.e., spatial distribution of chemical species), and spatial variations of the substrate temperature.
- the residence time ⁇ (r, ⁇ ) of chemical species in the process space may be correlated with the amount of plasma dissociation occurring due to interactions between chemical constituents and energetic electrons and, hence, the residence time may be correlated with process chemistry; i.e., the greater the residence time, the greater the amount of dissociation of chemical constituents and the lesser the residence time, the lesser the dissociation of chemical constituents.
- the uniformity of process results can include the uniformity (or non-uniformity) of the spatial distribution of a feature critical dimension (CD) across the substrate or a side-wall angle (SWA) across the substrate.
- CD feature critical dimension
- SWA side-wall angle
- the etch process is affected by the substrate temperature
- the distribution of substrate temperature can directly affect the spatial distribution of process results.
- the spatial distribution of substrate temperature may be utilized to compensate for other process or system non-uniformities.
- one element that affects substrate temperature is the thermal contact between the substrate and the substrate holder. For instance, when a substrate is clamped to the substrate holder, a heat transfer gas, such as helium, is introduced to the micro-space between the backside of the substrate and the topside of the substrate holder in order to improve the thermal conduction between the substrate and substrate holder. With the exception of a small leakage of heat transfer gas at the peripheral edge of the substrate, the net flow of heat transfer gas to the backside of the substrate is substantially zero.
- a general objective of the present invention is to improve process uniformity in semiconductor manufacturing across the surfaces of substrates during processing.
- a more particular objective of the invention is to provide process parameter control to offset non-uniform effects of process conditions to improve process uniformity across the surfaces of substrates.
- a further objective of the invention is to provide control of temperature or temperature distribution across the surfaces of substrates during processing.
- Another objective of the present invention is to cause deformation of a substrate during the processing of the substrate.
- a more particular objective of the invention is to provide local flexing of a substrate by dynamic adjustment of the gas pressure on the backside of the substrate.
- backside gas pressure is varied across the substrate holder to control substrate conditions and condition variation or uniformity across the substrate during processing.
- one or more process parameters is varied across the substrate to improve process uniformity across the surface of a substrate that is supported on a substrate holder.
- temperature or temperature distribution is controlled across the surface of a substrate being processed by varying the thermal conductivity between the substrate and the substrate holder.
- gas pressure can be controlled across the back of a substrate on a substrate holder in response to pressure, temperature, or other parameter measurements across the substrate or substrate support.
- control can be implemented automatically or interactively by a programmed controller of a processing apparatus.
- Described embodiments of the present invention are predicated in part upon the concept that the thermal conductivity of the backside gas between the substrate and the substrate holder strongly depends upon the pressure of gas between the substrate and the substrate holder. Accordingly, embodiments of the invention are provided in which backside gas pressure is varied across the back of the substrate to facilitate a change in the thermal conductance between the substrate and substrate holder and, thus, facilitate a change in the substrate temperature.
- a method and an apparatus can control the radial or non-radial temperature distribution across a substrate during processing.
- substrate temperature is controlled in a way that compensates for or offsets non-uniform effects of process conditions.
- the temperature of the substrate can be controlled in a non-uniform manner to offset the non-uniform effects of operating conditions, for example, of the effects of a non-uniform distribution of plasma density, process chemistry, process pressure, or combination thereof.
- heat transfer gas supplied to and removed from the backside of the substrate is dynamically controlled across different zones on a substrate supporting chuck.
- the dynamic control of the supply of heat transfer gas causes a spatial variation of the heat conduction between the chuck and the substrate across the surface of the substrate.
- the dynamic control can adjust the effects of the backside gas to offset the effects of non-uniformities caused by other process conditions.
- the dynamic control is particularly useful in overcoming radial and angular non-uniformity.
- the flow of a backside gas is dynamically varied across the chuck to better control the uniformity of the processing of a substrate.
- dynamic flow duration can, for example, be choreographed to offset effects of non-uniformity of an incoming substrate or to offset non-uniformity of a static etch process.
- the substrate holder is divided into zones or areas. These areas may be, for example, about the size of the dies on the substrate.
- the exact pattern shape of the zones and the number of zones can be separately determined or designed empirically based on simulations and measured uniformity results.
- Zones can be dynamically adjusted at a pre-selected frequency, and this frequency may vary depending upon the process condition, for example.
- Multi-zone, dynamically controlled supply and evacuation of heat transfer gas can be provided in order to compensate for non-uniformity of incoming substrates and the non-uniformity of process conditions, in order to obtain a uniform etch result of, for example, critical dimensions, etch profile, etc.
- This invention provides an effective way for controlling the spatial distribution of temperature across the surface of a substrate.
- the method includes the dynamic variation of the supply and evacuation of heat transfer gas to and from the backside of the substrate.
- the method can be used with multiple-zone, temperature-controlled chucks or with single zone chucks.
- the method can adjust the spatial distribution of substrate temperature between process steps and during a process step.
- a multi-zone chuck in which each zone has at least one port to supply gas and at least one port to remove gas.
- a pressure regulator is provided for performing at least one of monitoring, adjusting or controlling the gas pressure within the zones. Control is provided that can vary the gas pressure within each zone dynamically in order to adjust the spatial uniformity of process results on the surface of the substrate.
- Gas zones can be activated across the substrate, while previously activated zones can be de-activated in a dynamic, controlled manner.
- Each zone can be provided with an array of ports, inlet or outlet or both, that can be grouped by gas distribution manifolds or otherwise.
- the grouping for example, can define the zones, although surface features, such as ridges, can alternatively or in addition be provided in the chuck can be used to delineate the zones.
- the supply and removal of heat transfer gas can be initiated and then disrupted, causing the local temperature at positions with the disrupted backside gas flow to increase while causing the local temperature at positions with the initiated backside gas flow to decrease.
- the timing or sequencing of these changes in flow by zones can produce a dynamic pressure distribution or pressure wave on the backside of the substrate that, in turn, can affect a dynamic temperature distribution or thermal wave that propagates radially, or circumferentially or otherwise, across the substrate.
- the timing or sequencing of the supply and removal of heat transfer gas can be performed to create a pressure wave of substantially constant phase speed.
- timing or sequencing of the supply and removal of heat transfer gas can be performed to create a pressure wave that is variable, spatially or temporally or both, in phase, speed, amplitude or otherwise.
- Alternate methods can use combinations of systematic zones or random zones across the substrate. Moreover, multiple zones can be changed at the same time.
- a method to cause deformation of a substrate during processing of the substrate.
- the method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate.
- control of the pressure may include separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.
- a method of locally deforming a substrate in which a deformation profile for a substrate during processing is determined.
- the substrate is supported on a substrate support in a vacuum chamber for processing, and backside is provided gas through each of a plurality of groups of inlet ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate.
- Each of said areas of the substrate support has at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system.
- the pressure of the backside gas is separately controlled at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, to achieve the predetermined deformation profile of the substrate.
- the pressure profile is predetermining to produce the predetermined deformation profile and the pressure of the backside gas is separately controlled in accordance with the predetermined pressure profile.
- deformation of the substrate is sensed during processing; and the pressure of the backside gas is separately controlled in response to the sensed deformation of the substrate.
- Fig. 1 is a diagram of an upper surface of a substrate supporting chuck sub-divided into multiple controlled backside gas zones according to one embodiment of the invention.
- Fig. 2 is a diagram similar of an upper surface of a substrate supporting chuck sub-divided into an alternative pattern according to another embodiment of the invention.
- FIG. 3 is a simplified diagram of a plasma processing system having a substrate supporting chuck.
- Figs. 4 A through 4C illustrate a method of dynamically altering the pressure on the backside of the substrate at one or more zones.
- Figs. 5A and 5B illustrate an effect of local deformation of a substrate according to different embodiments.
- the substrate processing system can comprise a plasma processing system configured to treat a substrate with plasma.
- the substrate processing system can comprise a non-plasma processing system configured to treat a substrate.
- the substrate processing system may comprise an etching system that utilizes plasma to facilitate a dry etching process during semiconductor manufacturing. Examples of an etching system are provided in U.S. Patent No. 6,492,612 and PCT Publication WO 02/086957; each of which are hereby expressly incorporated herein by reference. Nonetheless, the invention can be used for improving uniformity in deposition systems or in other processing systems.
- the substrate processing system may include a thermal treatment module in a photoresist coating system such as a track system; a vapor deposition system such as a chemical vapor deposition (CVD) system, a plasma enhanced CVD (PECVD) system, an atomic layer deposition (ALD) system, a plasma enhanced ALD (PEALD) system, a physical vapor deposition (PVD) system or an ionized PVD (iPVD) system; a dry plasma etching system; a dry non-plasma etching system; a dry cleaning system; an ashing system; a chemical oxide removal (COR) system; or a single substrate thermal processing system configured to thermally treat a substrate.
- a vapor deposition system such as a chemical vapor deposition (CVD) system, a plasma enhanced CVD (PECVD) system, an atomic layer deposition (ALD) system, a plasma enhanced ALD (PEALD) system, a physical vapor deposition (PVD) system or an
- the substrate processing system may be configured to process a substrate of arbitrary shape.
- a typical substrate may be a circular wafer of various diameters including, but not limited 200 millimeters (mm), 300 mm, 450 mm, or larger.
- the substrate may be a semiconductor substrate, such as a silicon substrate or SiGe substrate, or a silicon-on-insulator (SOI) substrate.
- the substrate may have a rectangular shape, such as a flat panel or liquid crystal display (LCD).
- Fig.l is a plan view of the face of a substrate support table 20 for supporting a substrate for processing in the process chamber of a substrate processing module, for example, the etch module referred to above.
- the table 20 comprises a substrate clamping system (e.g., electrical or mechanical clamping system) to clamp the substrate to the upper surface of table 20.
- table 20 may include an electrostatic chuck (ESC).
- ESC electrostatic chuck
- the clamping system provides a clamping force that is sufficiently great to overcome the opposing pressure force resulting from the supply of heat transfer gas to the backside of the substrate.
- the clamping force may be adjustable to affect an increase or decrease in substrate contact with the table 20.
- the table 20 comprises a table temperature control system having one or more temperature control elements.
- the table temperature control system can include a heating system, or a cooling system, or both.
- table 20 can include a substrate heating element or substrate cooling element (not shown) beneath the surface of the table 20.
- the heating system or cooling system can include a re-circulating fluid flow that receives heat from table 20 and transfers heat to a heat exchanger system (not shown) when cooling, or transfers heat from the heat exchanger system to the table when heating.
- the cooling system or heating system may include heating/cooling elements, such as resistive heating elements, or thermo-electric heaters/coolers located within table 20. Additionally, the heating elements or cooling elements or both can be arranged in more than one separately controlled temperature zone. As illustrated in Fig. 1 , the support table 20 may have two thermal zones, including an inner circular zone 22 and an outer annular zone 24. The temperatures of the zones 22 and 24 may be controlled by heating or cooling the support table thermal zones separately.
- heating/cooling elements such as resistive heating elements, or thermo-electric heaters/coolers located within table 20. Additionally, the heating elements or cooling elements or both can be arranged in more than one separately controlled temperature zone. As illustrated in Fig. 1 , the support table 20 may have two thermal zones, including an inner circular zone 22 and an outer annular zone 24. The temperatures of the zones 22 and 24 may be controlled by heating or cooling the support table thermal zones separately.
- the upper surface of the table 20 may be provided with an array of gas ports 26 through which a heat transfer gas, such as helium, can be introduced to, or removed from, the space between the backside of the substrate and the upper surface of the table 20.
- a heat transfer gas such as helium
- the introduction of heat transfer gas to the backside of the substrate facilitates an increase in the thermal conduction between the substrate and table 20, while removal of heat transfer gas from the backside of the substrate facilitates a decrease in the thermal conduction between the substrate and table 20.
- the typical pressure of the heat transfer gas may be approximately 30 Torr, typically exceeding the processing pressure in the vacuum processing chamber and, hence, this difference in pressure results in a net force on the substrate outward from the surface of the support table 20.
- this pressure force is overcome by a clamping system, for example, by an electrostatic chuck that provides an electrostatic clamping force to hold the substrate to the table 20.
- a clamping system for example, by an electrostatic chuck that provides an electrostatic clamping force to hold the substrate to the table 20.
- the introduction of heat transfer gas is typically maintained in a static condition between the substrate and the support surface of the table 20.
- the gas ports 26 are arranged and grouped into zones or areas.
- the groups of ports 26 may be arranged in a Cartesian, or grid- like, manner.
- a rectangular array of twenty- five square zones 30 is depicted.
- the shape of each zone or number of zones or both can be arbitrary.
- each zone can correspond to a substrate die.
- Each of the zones 30 includes at least one gas port through which heat transfer gas can be introduced or through which heat transfer gas can be removed.
- each zone may have a set of thirty-six gas ports 26. At least some fraction of these gas ports 26 may be coupled to a gas supply source 28 through a zone control valve 32, as illustrated in Fig. 3. At least some fraction of these gas ports 26 within a zone 30 may be coupled to an exhaust or pumping system 29 through another control valve 32.
- Gas ports for supplying heat transfer gas can be independent from gas ports for removing heat transfer gas, as depicted in Fig. 3. Alternatively, gas ports for supplying heat transfer gas may also be utilized for removing heat transfer gas. In such a case, at least two control valves may be utilized for each zone to alternatively either valve off flow to the exhaust and permit a flow of heat transfer gas to the substrate or valve off the flow from the gas supply source and permit flow from the substrate to the exhaust.
- Gas ports 26 corresponding to a specific zone 30 that are configured to supply heat transfer gas to the zone can be coupled to a common gas supply manifold, while gas ports 26 corresponding to a specific zone 30 that are configured to remove heat transfer gas from the zone can be coupled to a common exhaust manifold. Additionally, the grouping of gas ports 26 can be further delineated by surface features (not shown), such as ridges, in the table 20.
- a zone can be activated to supply heat transfer gas to the zone while a previously activated zone is de-activated to remove heat transfer gas from the zone.
- Activation or deactivation of zones can be implemented in a dynamic, controlled manner.
- Each control valve 32 through which heat transfer gas is supplied to the backside of the substrate includes or is used in conjunction with a pressure regulator to set the gas pressure at the specific zone.
- the gas pressure delivered to each zone can range from several Torr to approximately 100 Torr. Additionally, for example, the gas pressure delivered to each zone can range from 10 Torr to approximately 50 Torr.
- the gas pressure can be increased to 50 Torr, while during deactivation, the gas pressure can be decreased to approximately 10 to 30 Torr or less.
- the supply and removal of heat transfer gas can be initiated and then disrupted, causing the local temperature at positions with the disrupted backside gas flow to increase while causing the local temperature at positions with the initiated backside gas flow to decrease.
- the timing or sequencing of these changes in flow by zones can produce a dynamic pressure distribution or pressure wave on the backside of the substrate that, in turn, can affect a dynamic temperature distribution or thermal wave that propagates radially, or circumferentially or otherwise, across the substrate.
- pressure wave is used herein to refer to a spatially varying pressure imposed on the backside of the substrate, and is not meant to be confused with an acoustic pressure wave in the conventional sense which is a longitudinal wave that depends upon inter-molecular collisions within a continuous gaseous atmosphere.
- the timing or sequencing of the supply and removal of heat transfer gas can, for example, be performed to create a pressure wave of substantially constant phase speed.
- the timing or sequencing of the supply and removal of heat transfer gas can be performed to create a pressure wave of spatially and/or temporally variable phase speed.
- Alternate methods can use combinations of systematic zones or random zones across the substrate. Moreover, multiple zones can be changed at the same time.
- the control valves 32 for each zone can be separately controllable by a controller 35.
- the controller 35 can control the valves 32 in a sequence from one edge of the table 20 to the opposite edge so as to create a thermal wave across the substrate, such as in the direction of the arrow 36 in Fig. 1.
- the controller 35 can control the valves 32 in sequence in a circumferential direction about the center of the table 20 so as to create a circumferentially propagating thermal wave that propagates about the center of the substrate, such as in the direction of the arrow 38 in Fig. 1.
- controller 35 can control the valves 32 in sequence in a radial direction towards or away from the center of the table 20 so as to create a radially propagating thermal wave that propagates radially inward towards the center or radially outward from the center of the substrate, such as in the direction of the arrow 39 in Fig. 1.
- Other patterns can alternatively be employed.
- a plurality of zones 130 are provided in a grid-like arrangement.
- One zone 132 is activated for a first duration of time, while surrounding zones 134 are de-activated.
- the de-activation of surrounding zones 134 may include operating these zones at a reduced pressure (relative to zone 132), or it may include evacuating these zones.
- the activated zone 132 may be de-activated, and the adjacent zone may then be activated as illustrated in the direction of operation 136 in Fig. 4 A.
- a plurality of zones 230 are provided in a grid-like arrangement.
- One zone 232 is activated for a first duration of time, while surrounding zones 235 are de-activated.
- the de-activation of surrounding zones 235 may include operating these zones at a reduced pressure (relative to zone 232), or it may include evacuating these zones.
- intermediate zones 234 may be activated at an intermediate pressure, e.g., a value between the activated zone 232 and the surrounding zones 235.
- the activated zone 232 may be de-activated, and the adjacent zone may then be activated as illustrated in the direction of operation 236 in Fig. 4B.
- a plurality of zones 330 are provided in a grid-like arrangement.
- Several zones 332 are activated for a first duration of time, while surrounding zones 334 are de- activated.
- the de- activation of surrounding zones 334 may include operating these zones at a reduced pressure (relative to the activated zones 332), or it may include evacuating these zones.
- the activated zones 332 may be de-activated, and the adjacent zones may then be activated as illustrated in the direction of operation 336 in Fig. 4C.
- a substrate 400 is locally deformed at site 410 where the backside pressure is activated at zone 432, while the backside pressure is de-activated or evacuated at surrounding zones 434.
- the deformation of substrate 400 at site 410 causes tensile stresses 412 in substrate 400 at site 410, while it causes compressive stresses 414 in substrate 400 surrounding site 410.
- dynamic stressing, including both tensile and compressive stresses, and de-stressing the substrate may affect relaxation of crystal interfaces or induce more crystal boundaries, and may even reduce crystal defects.
- the tilting of substrate 400 at site A can affect more direct treatment of side-walls 510 of feature 500 by an impinging treating agent 512.
- the treating agent 512 can include material for deposition on side- wall 510, or it may include ions from an etching plasma, cleaning plasma, or treating plasma.
- the local pressure can be in excess of 50 Torr, or desirably, it may in excess of 100 Torr. Alternatively, the local pressure may be in excess of 500 Torr.
- Table 20 can further comprise a temperature monitoring system (not shown) and one or more temperature measuring devices. Controller 35 can be coupled to the temperature monitoring system and can be configured to perform at least one of adjusting, controlling, or monitoring the temperature of the substrate, or the table 20, or both, at one or more locations.
- the temperature measuring device can include an optical fiber thermometer, an optical pyrometer, a band-edge temperature measurement system as described in pending U.S. Patent Application 10/168544, filed on July 2, 2002, the contents of which are incorporated herein by reference in their entirety, or a thermocouple such as a K-type thermocouple.
- optical thermometers include: an optical fiber thermometer commercially available from Advanced Energys, Inc., Model No. OR2000F; an optical fiber thermometer commercially available from Luxtron Corporation, Model No. M600; or an optical fiber thermometer commercially available from Takaoka Electric Mfg., Model No. FT- 1420.
- a spatial map of temperature for example, or a spatial map of a process result, including for example a critical dimension, profile, side-wall angle (SWA), etch rate, deposition rate, film thickness, etc., may be utilized to dictate the control scheme for adjusting the supply of heat transfer gas to different thermal zones on the backside of the substrate.
- SWA side-wall angle
- etch rate etch rate
- deposition rate deposition rate
- film thickness etc.
- etch rate For example, if a spatial map of the etch rate of a substrate, or a spatial map of the pattern CD of a substrate following lithography, is acquired and a relationship between the etch rate (or CD) and substrate temperature is understood (e.g., etch rate increases with higher temperature), then at least one of the gas pressure for a particular thermal zone or the time that a specific thermal zone is activated (supplied with heat transfer gas at a specific pressure) or de-activated (supplied with heat transfer gas at a reduced pressure and/or evacuated) can be adjusted accordingly.
- thermal zones requiring a lower etch rate may be operated at higher backside pressure and/or longer time durations, whereas thermal zones requiring a greater etch rate may be operated at lower backside pressure and/or shorter time durations.
- Controller 35 may typically include a microprocessor, a memory, and a digital input/output (I/O) port, potentially including digital/analog (D/ A) and/or A/D converters, capable of generating control voltages sufficient to communicate and activate inputs to table 20 as well as monitor outputs from table 20.
- controller 35 can be coupled to and exchange information with control valves 32, the gas supply system 28, the pumping system 29, the clamping system (not shown), the table temperature control system (not shown), and the temperature monitoring system (not shown).
- a program stored in the memory interacts with the components of the thermal treatment assembly according to a stored process recipe.
- the controller 35 may also be implemented as a general purpose computer, processor, digital signal processor, etc., which causes a thermal treatment assembly to perform a portion or all of the processing steps of the invention in response to the controller 35 executing one or more sequences of one or more instructions contained in a computer readable medium.
- the computer readable medium or memory is configured to hold instructions programmed according to the teachings of the invention and can contain data structures, tables, records, or other data described herein.
- controller 35 may be a general purpose computer such as a DELL PRECISION WORKSTATION 640TM, available from Dell Corporation, Austin, Texas.
- Examples of computer readable media are compact discs, hard disks, floppy disks, tape, magneto-optical disks, PROMs (EPROM, EEPROM, flash EPROM), DRAM, SRAM, SDRAM, or any other magnetic medium, compact discs (e.g., CD-ROM), or any other optical medium, punch cards, paper tape, or other physical medium with patterns of holes, a carrier wave, or any other medium from which a computer can read.
- Controller 35 may be locally located relative to the table 20, or it may be remotely located relative to the table 20, connected thereto via an internet or intranet. Thus, controller 35 can exchange data with the table 20 using at least one of a direct connection, an intranet, or the internet. Controller 35 may be coupled to an intranet at a customer site (i.e., a device maker, etc.), or coupled to an intranet at a vendor site (i.e., an equipment manufacturer). Furthermore, another computer (i.e., controller, server, etc.) can access controller 35 to exchange data via at least one of a direct connection, an intranet, or the internet.
- a customer site i.e., a device maker, etc.
- a vendor site i.e., an equipment manufacturer
- another computer i.e., controller, server, etc.
- controller 35 can access controller 35 to exchange data via at least one of a direct connection, an intranet, or the internet.
- Fig. 2 illustrates an alternative support table 20a having a concentric annular array of zones 30a, and concentric rings of gas ports 26a, grouped to a valve that controls flow to or from the ports 26a within each zone 30a, which can be operated in a manner similar to the zones 30 in Fig. 1.
- Various zone patterns can be used. The embodiment of Fig. 1 can more easily produce the pattern represented by the arrow 36, while that of Fig. 2 can more easily produce the pattern represented by the arrow 38 or 39, although either can be controlled to approximate each or another pattern.
- the support tables 20 or 20a are typically situated in an upwardly facing orientation at the bottom of a vacuum chamber 40, as shown in Fig. 3, to support a substrate facing a plasma source 42 located above the substrate in an upper portion of the chamber 40.
- the plasma source 42 is a coil or antenna coupled to an RF generator 44 that produces an inductively coupled plasma in the chamber 40.
- the plasma source 42 comprises an electrode that produces a capacitively coupled plasma.
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CN2008800158060A CN101681870B (en) | 2007-03-12 | 2008-03-11 | Dynamic temperature backside gas control for improved within-substrate processing uniformity |
KR1020097021283A KR101526615B1 (en) | 2007-03-12 | 2008-03-11 | Method of controlling process uniformity, plasma processing apparatus and method of locally deforming a substrate |
JP2009553719A JP2010521820A (en) | 2007-03-12 | 2008-03-11 | Dynamic temperature backside gas control to improve process uniformity within the substrate |
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US11/684,818 | 2007-03-12 | ||
US11/684,818 US7674636B2 (en) | 2007-03-12 | 2007-03-12 | Dynamic temperature backside gas control for improved within-substrate process uniformity |
US11/684,957 US7576018B2 (en) | 2007-03-12 | 2007-03-12 | Method for flexing a substrate during processing |
US11/684,957 | 2007-03-12 |
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WO2008112673A3 (en) | 2009-02-05 |
JP2010521820A (en) | 2010-06-24 |
KR101526615B1 (en) | 2015-06-05 |
KR20100015515A (en) | 2010-02-12 |
CN101681870B (en) | 2011-08-17 |
CN101681870A (en) | 2010-03-24 |
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