CN110361938B - Exposure method and manufacturing method of semiconductor device - Google Patents
Exposure method and manufacturing method of semiconductor device Download PDFInfo
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- CN110361938B CN110361938B CN201810253594.5A CN201810253594A CN110361938B CN 110361938 B CN110361938 B CN 110361938B CN 201810253594 A CN201810253594 A CN 201810253594A CN 110361938 B CN110361938 B CN 110361938B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an exposure method and a manufacturing method of a semiconductor device, the invention is characterized in that a substrate to be exposed is placed on a workpiece table; measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed; aligning the substrate to be exposed on the workpiece table and aligning the mask plate on the mask table; an exposure operation is performed. According to the technical scheme provided by the invention, the temperature of the substrate to be exposed is controlled, so that the temperature difference between the alignment operation and the exposure operation of the substrate to be exposed is reduced, the problems of deformation and the like of the substrate to be exposed caused by overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed in the exposure process is improved.
Description
Technical Field
Embodiments of the present invention relate to photolithography, and in particular, to an exposure method and a method for manufacturing a semiconductor device.
Background
Photolithography is one of the major processes in the production of planar transistors and integrated circuits. As the demand for lithography technology becomes higher, there is a need to reduce errors generated during lithographic exposure.
The overlay is one of three major indexes of the photoetching machine, the requirement on the overlay index is higher and higher along with the progress of nodes, more and more errors need to be considered, and the overlay index is considered in the process of index budget. In the lithography machine, after being taken out from a chip library in an external environment, a silicon chip is firstly placed on a pre-alignment table for pre-alignment, and then is placed on a workpiece table (internal environment) by a manipulator for alignment, wherein the temperature is T1. Because the internal environment and the external environment have temperature difference, the thermal expansion stress is not released after the silicon wafer is brought into the internal environment. The silicon wafer uploading and the mask uploading are synchronous, but the mask uploading time is long, and after the silicon wafer alignment action is finished, the mask alignment can be started after a period of time, so that the silicon wafer exposure is carried out. The silicon wafer had exchanged heat with the ambient environment during the process, and the temperature changed from T1 to T2. Namely, the temperature of the silicon wafer is T2 during exposure, the temperature of the silicon wafer is T1 during alignment, and the silicon wafer has deformation under two scenes, so that the inter-field magnification of the alignment is influenced, and the alignment error is increased.
Disclosure of Invention
The invention provides an exposure method and a manufacturing method of a semiconductor device, aiming at achieving the purposes of eliminating the influence of silicon wafer deformation caused by temperature change on photoetching precision and improving the exposure accuracy.
In a first aspect, an embodiment of the present invention provides an exposure method, including:
placing a substrate to be exposed on a workpiece table;
measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed;
aligning the substrate to be exposed on the workpiece table and aligning the mask plate on the mask table;
an exposure operation is performed.
Optionally, after performing temperature control according to the surface temperature of the substrate to be exposed, the method further includes:
and after waiting for a preset time period, carrying out alignment treatment on the substrate to be exposed on the workpiece table.
Optionally, when the mask is replaced, the preset time period t is1Is composed of
t1＝tpre-N×tmark
Wherein, tpreTime required for mask plate application, tmarkAnd N is the number of the alignment marks in the substrate to be exposed.
Optionally, when the mask is not replaced, the preset time period t is2Is composed of
t2＝[M-ceil(N×tmark/tfield)]×tfield
Wherein, the substrate to be exposed is divided into a plurality of exposure fields when being exposed, M is the number of the exposure fields in the substrate to be exposed, ceil is an upward rounding function, tmarkThe alignment time of each alignment mark in the substrate to be exposed, N is the number of the alignment marks in the substrate to be exposed, tfieldIs the exposure time of each exposure field in the substrate to be exposed.
Optionally, the surface of the substrate to be exposed is divided into a plurality of temperature control fields.
Optionally, the temperature control field is obtained by dividing according to a coordinate system where the substrate to be exposed is located when the exposure operation is performed.
Optionally, the measuring the surface temperature of the substrate to be exposed by the temperature sensor, and performing temperature control according to the surface temperature of the substrate to be exposed includes:
sequentially measuring the surface temperature of the temperature control field of the substrate to be exposed according to a first preset path, and sequentially controlling the temperature of the temperature control field of the substrate to be exposed according to a second preset path;
and repeating the steps to enable the surface temperature of the temperature control field to be within a preset temperature range.
Optionally, the first preset path is the same as the second preset path.
Optionally, the temperature control of the substrate to be exposed is performed simultaneously with the measurement of the surface temperature of the temperature control field of the substrate to be exposed.
Optionally, in the process of repeatedly performing the above steps, if the surface temperature of the temperature control field of the measurement portion of the substrate to be exposed exceeds the preset temperature range, the second preset path is re-planned, and the temperature of the temperature control field of the substrate to be exposed is controlled according to the planned second preset path.
Optionally, the measuring the surface temperature of the substrate to be exposed by the temperature sensor, and performing temperature control according to the surface temperature of the substrate to be exposed includes:
measuring the surface temperature of each temperature control field of the substrate to be exposed, and acquiring the temperature difference between the surface temperature of each temperature control field and the target temperature;
acquiring temperature control quantity according to the temperature difference between the surface temperature of each temperature control field and the target temperature;
and controlling the surface temperature of each temperature control field according to the temperature control quantity.
Optionally, the temperature control mode is air shower.
In a second aspect, an embodiment of the present invention further provides a manufacturing method of a semiconductor device, including any one of the above-described exposure methods.
The invention provides an exposure method and a manufacturing method of a semiconductor device, which comprises the steps of placing a substrate to be exposed on a workpiece table; measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed; aligning the substrate to be exposed on the workpiece table and aligning the mask plate on the mask table; and executing exposure operation to reduce the temperature difference between the alignment operation and the exposure operation of the substrate to be exposed, so that the problems of deformation and the like of the substrate to be exposed caused by overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed during exposure is improved.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, a brief description is given below of the drawings used in describing the embodiments. It should be clear that the described figures are only views of some of the embodiments of the invention to be described, not all, and that for a person skilled in the art, other figures can be derived from these figures without inventive effort.
FIG. 1 is a flowchart of an exposure method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating the division of a temperature control field in a substrate to be exposed according to an embodiment of the present invention;
fig. 3 is a coordinate system relationship vector diagram according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the division of the temperature control field in the substrate to be exposed according to the second embodiment of the present invention;
fig. 5 is a schematic structural diagram of an exposure apparatus according to a fourth embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another exposure apparatus according to a fourth embodiment of the present invention;
fig. 7 is a flowchart of a temperature control method according to a fifth embodiment of the present invention;
FIG. 8 is a flow chart of another method for controlling temperature according to a fifth embodiment of the present invention;
fig. 9 is a flowchart of another temperature control method according to a fifth embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is a flowchart of an exposure method according to an embodiment of the present invention. Referring to fig. 1, an exposure method provided by an embodiment of the present invention includes:
s10: and placing the substrate to be exposed on a workpiece table.
It will be appreciated that the workpiece stage is moveable, and in general the workpiece stage may be in two positions, one being an exposure position corresponding perpendicularly to the reticle for performing an exposure operation on the substrate to be exposed, and the other being a measurement position corresponding to a temperature sensor for performing an alignment process on the substrate to be exposed.
And the mechanical arm takes the substrate to be exposed out of the film library, the substrate to be exposed is placed on the pre-alignment platform to pre-align the substrate to be exposed, and after the pre-alignment of the substrate to be exposed is finished, the substrate to be exposed is placed on the workpiece platform on the measuring position through the mechanical arm.
S20: and measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed.
The temperature sensor can directly measure the surface temperature of the substrate to be exposed, and exemplarily, the temperature sensor can be a non-contact infrared measurement sensor, so that the surface temperature of each area in the substrate to be exposed can be measured, but not the ambient temperature of the substrate to be exposed, measurement errors caused by the influence of the distance between the temperature sensor and the substrate to be exposed can be avoided, the monitoring of the temperature difference between each area of the substrate to be exposed can be realized, and the accuracy of the measured surface temperature of the substrate to be exposed can be improved.
The temperature control is carried out according to the surface temperature of the substrate to be exposed, so that the temperature of the substrate to be exposed on the measuring position is close to the temperature of the substrate to be exposed during the exposure operation, the deformation of the substrate to be exposed caused by the temperature difference is reduced as much as possible, and the exposure error caused by the deformation of the substrate to be exposed is avoided.
It should be noted that the temperature of the substrate to be exposed may be controlled in various ways, and for example, the temperature may be controlled by wind shower.
S30: and carrying out alignment treatment on the substrate to be exposed on the workpiece table and carrying out alignment treatment on the mask plate on the mask table.
And carrying out alignment treatment on the substrate to be exposed after temperature control, and displacing the workpiece table on which the substrate to be exposed is placed from the measurement position to the exposure position.
Aligning the mask plate on the mask table according to the actual condition, specifically, when the mask plate does not need to be replaced, the default mask plate is already aligned; when the mask is required to be replaced, the mask is taken out of the mask library through the manipulator, the taken mask is subjected to pre-alignment treatment, and after the pre-alignment treatment of the mask is completed, the mask is aligned.
S40: an exposure operation is performed.
The light emitted by the illumination unit is projected on a mask plate on a mask table, the light is transmitted through the mask plate and is irradiated on a substrate to be exposed on a workpiece table at an exposure position through an objective lens, and the substrate to be exposed on the workpiece table is exposed according to a pattern on the mask plate.
According to the exposure method provided by the embodiment of the invention, the surface temperature difference of the substrate to be exposed between the alignment treatment and the exposure operation is reduced by controlling the surface temperature of the substrate to be exposed, the problems of deformation of the substrate to be exposed and the like caused by overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed during exposure is improved.
Optionally, after performing temperature control according to the surface temperature of the substrate to be exposed, the method further includes: and after waiting for a preset time period, aligning the substrate to be exposed on the workpiece table.
Considering that there may be a case that the mask alignment process or the exposure operation is being performed on the substrate to be exposed on the exposure station stage in the subsequent operation, after the temperature control is performed on the substrate to be exposed, the exposure operation is not performed but a period of time is required to wait after the substrate to be exposed is directly performed. Therefore, in order to further reduce the time difference between the alignment process and the exposure operation of the substrate to be exposed and improve the accuracy of the exposure operation, the alignment process may be performed on the substrate to be exposed after waiting for a preset time period after the temperature control is performed on the substrate to be exposed.
It can be understood that, when the substrate to be exposed is exposed, it is necessary to determine whether the mask needs to be replaced according to the actual situation, and the preset time period for which the substrate to be exposed needs to wait may be determined according to the condition whether the mask needs to be replaced.
Optionally, when the mask is replaced, the preset time period t is set1Is composed of
t1＝tpre-N×tmark
Wherein, tpreTime required for mask plate application, tmarkAnd N is the number of the alignment marks in the substrate to be exposed.
When the mask needs to be replaced, the mask needs to be printed again, and the time t required by the mask printing is tpreIncluding the time of operations such as reticle printing and reticle pre-alignment, which is substantially fixed.
The alignment treatment of the substrate to be exposed is carried out according to the alignment marks on the substrate to be exposed, the alignment treatment is completed after all the alignment marks on the substrate to be exposed are aligned one by one, and the alignment time of each alignment mark is basically the same.
When the mask needs to be replaced, the preset time period t1The calculation can be started from the plate-loading time of the mask plate, so that when the plate-loading of the mask plate is completed, the alignment treatment of the substrate to be exposed is completed simultaneously, the waiting time of the substrate to be exposed is shortened as much as possible, the working efficiency is improved, the time difference between the alignment treatment and the exposure operation of the substrate to be exposed is reduced as much as possible, the surface temperature of the substrate to be exposed is prevented from changing due to the overlong time difference, the substrate to be exposed is prevented from being deformed, and the accuracy of the substrate to be exposed in the exposure process is improved.
OptionalWhen the mask is not replaced, the time period t is preset2Is composed of
t2＝[M-ceil(N×tmark/tfield)]×tfield
Wherein, the substrate to be exposed is divided into a plurality of exposure fields when being exposed, M is the number of the exposure fields in the substrate to be exposed, ceil is an upward integer function, tmarkThe alignment time of each alignment mark in the substrate to be exposed, N is the number of the alignment marks in the substrate to be exposed, tfieldIs the exposure time of each exposure field of the substrate to be exposed.
It can be understood that the substrate to be exposed may be divided into a plurality of exposure fields during exposure, the exposure fields may be divided in the same manner for each substrate to be exposed, and each divided exposure field is exposed in sequence, and the exposure time of each exposure field is the same.
When the mask is not required to be replaced, the preset time period t2The calculation may be started when the exposure of the substrate to be exposed at the exposure position is started. And calculating the number of exposure fields which can be exposed by the substrate to be exposed on the exposure position workpiece table in the alignment treatment process of the substrate to be exposed, and rounding up. Waiting for a predetermined time period t2The exposure time required by exposure of the residual exposure fields is obtained by subtracting the number of the exposure fields which can be exposed during the alignment process from the number of the exposure fields divided in the substrate to be exposed, so that after the substrate to be exposed on the exposure position is exposed, the substrate to be exposed on the measurement position is simultaneously aligned, the time for moving the substrate to be exposed on the measurement position to the exposure position is shortened as much as possible, the working efficiency is improved, and the time difference between the alignment process and the exposure operation of the substrate to be exposed is reduced as much as possible.
Optionally, the surface of the substrate to be exposed is divided into a plurality of temperature control fields.
FIG. 2 is a schematic diagram illustrating the division of the temperature control field in the substrate to be exposed according to an embodiment of the present invention. Referring to fig. 2, in the process of controlling the temperature of the substrate to be exposed, the surface of the substrate to be exposed may be divided into a plurality of temperature control fields, so that the temperatures of different areas in the surface of the substrate to be exposed may be controlled, and the surface temperature of the substrate to be exposed may be controlled more accurately. Wherein the size of each temperature control field can be the same. The temperature control field can be divided by referring to the exposure field, or can be divided according to other requirements, and the specific dividing method is not limited.
Optionally, the temperature control field is obtained by dividing according to a coordinate system where the substrate to be exposed is located when the exposure operation is performed.
It will be appreciated that in the exposure position, the alignment of the reticle and the exposure of the substrate to be exposed are typically performed in a coordinate system with reference to the objective lens, whereas in the measurement position, the temperature control and alignment of the substrate to be exposed are typically performed in coordinates with reference to the workpiece table. For convenience of operation, the coordinate system in the exposure process can be unified, that is, the temperature control field of the substrate to be exposed is divided according to the coordinate system in the exposure process of the substrate to be exposed in the temperature control process.
Fig. 3 is a coordinate system relationship vector diagram according to an embodiment of the present invention. Referring to fig. 3, the exposure of the substrate to be exposed is performed by establishing an objective coordinate system with the center of the objective as the origin, with reference to the objective coordinate system. Since the temperature control device for temperature control of the substrate to be exposed is stationary, the reference distance P between the center of the object and the temperature control device in the objective coordinate system is fixedrefIs stationary. Because the substrate to be exposed is on the workpiece table, the distance P between each temperature control field in the substrate to be exposed and the temperature control device is generally taken as the reference positioniCan also be determined, and thus, can be based on the reference distance PrefAnd the distance P between each temperature control field and the temperature control deviceiAnd determining the position of each temperature control field in the objective lens coordinate system. The moving distance P of the workpiece stage during temperature control in the temperature control field can be determined by the above methodws_i，Pws_i＝Pi-PrefWherein P isref、PiAnd Pws_iAre all vector values.
Example two
The present embodiment may provide an alternative example based on the above-described embodiments. On the basis of the above embodiment, the exposure method includes:
s10: and placing the substrate to be exposed on a workpiece table.
S20: and measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed.
There are various specific implementation methods for this step, and a typical example is described in detail below, but the present application is not limited thereto. When the surface of the substrate to be exposed is divided into a plurality of temperature control fields, optionally, S20 includes:
firstly, the surface temperature of the temperature control field of the substrate to be exposed is sequentially measured according to a first preset path, and the temperature of the temperature control field of the substrate to be exposed is sequentially controlled according to a second preset path.
And then, repeatedly executing the steps to enable the surface temperature of the temperature control field to be within a preset temperature range.
The first preset path and the second preset path are planned and adjusted according to actual needs, and the movement paths can be planned according to the principle that the total movement distance is the minimum.
The preset temperature range is a temperature range having a difference from the default temperature between the set values. The default temperature and the set value can be set according to actual conditions.
The surface temperature of each temperature control field in the substrate to be exposed can be measured through the temperature sensor, and the temperature of each temperature control field is sequentially controlled, so that the surface temperature of the temperature control field is within a preset temperature range. When the temperature control fields with the surface temperature exceeding the preset temperature range exist, the steps can be repeated until the surface temperatures of all the temperature control fields in the substrate to be exposed are within the preset temperature range, and the temperature control of the substrate to be exposed is completed.
It can be understood that the sequence between the sequential measurement of the surface temperature of each temperature control field of the substrate to be exposed and the sequential temperature control of each temperature control field of the substrate to be exposed is not limited, and for example, the surface temperature of each temperature control field may be measured first, and then the temperature control may be performed; the temperature of each temperature control field can be controlled first, and then the surface temperature after temperature control is measured, or the surface temperature of each temperature control field can be measured while temperature control is performed on the temperature control field.
S30: and carrying out alignment treatment on the substrate to be exposed on the workpiece table and carrying out alignment treatment on the mask plate on the mask table.
S40: an exposure operation is performed.
According to the exposure method provided by the embodiment of the invention, the surface temperature of each temperature control field of the substrate to be exposed is measured and is subjected to temperature control, so that the surface temperature of the substrate to be exposed is within the preset temperature range, the temperature difference between the alignment operation and the exposure operation of the substrate to be exposed is reduced, the time difference is shortened, the problems of deformation of the substrate to be exposed caused by overlong time difference and overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed during exposure is improved.
Optionally, the first preset path is the same as the second preset path.
For example, the first preset path and the second preset path may be a motion path passing through all temperature control fields in the substrate to be exposed. Specifically, when the temperature control mode is air shower, the workpiece table on which the substrate to be exposed is placed can be moved in a first preset path, the surface temperatures of the temperature control fields in the substrate to be exposed on the workpiece table are sequentially measured through the temperature sensors, and then the workpiece table is driven to perform air shower on the temperature control fields in the substrate to be exposed according to the same path. And measuring the surface temperature of each temperature control field according to a first preset path, confirming whether the surface temperature of each temperature control field is in a preset temperature range, continuously driving the workpiece table to perform air shower on each temperature control field in the substrate to be exposed according to the first preset path if the surface temperature of each temperature control field is not in the preset temperature range, and measuring the surface temperature of each temperature control field according to the same preset path until the surface temperature of all the temperature control fields in the substrate to be exposed is in the preset temperature range.
It is understood that the first predetermined path and the second predetermined path are the same, that is, the path for measuring the surface temperature of each temperature control field in the substrate to be exposed is the same as the path for performing temperature control on each temperature control field. In order to shorten the time and the times for controlling the temperature of the substrate to be exposed and measuring the surface temperature of the substrate to be exposed, optionally, the step of sequentially measuring the surface temperature of the temperature control field of the substrate to be exposed and the step of sequentially controlling the temperature of the temperature control field of the substrate to be exposed can be performed synchronously. Namely, the surface temperature of the substrate to be exposed can be synchronously measured while the temperature of the substrate to be exposed is controlled.
In which, it takes a long time to measure and control the surface temperature of each temperature control field in the substrate to be exposed each time, and the temperature control field whose surface temperature is within the preset temperature range may be repeatedly temperature-controlled, thereby wasting time and resources.
Optionally, during the process of repeatedly performing the sequential measurement of the surface temperature of the temperature control field of the substrate to be exposed according to the first preset path and the process of performing the temperature control of the temperature control field of the substrate to be exposed according to the second preset path, if the surface temperature of the temperature control field of the substrate to be exposed at the measurement part exceeds the preset temperature range, the second preset path is re-planned, and the temperature control of the temperature control field of the substrate to be exposed is performed according to the planned second preset path.
FIG. 4 is a schematic diagram illustrating the division of the temperature control field in the substrate to be exposed according to the second embodiment of the present invention. Referring to fig. 4, the surface temperature of only a portion of the temperature controlled field exceeds the preset temperature range. In order to save time and resources, when the surface temperature of the temperature control field of a part of the substrate to be exposed exceeds the preset temperature range, the second motion path can be re-planned, and the re-planned second motion path only passes through the temperature control field of which the surface temperature exceeds the preset temperature range and does not pass through the temperature control field of which the surface temperature is within the preset temperature range, so that the time for controlling the temperature of the substrate to be exposed is reduced.
And sequentially carrying out temperature control on the temperature control field of the substrate to be exposed according to the second preset path after planning, and sequentially measuring the surface temperature of the temperature control field of the substrate to be exposed according to the second preset path after planning, or simultaneously carrying out temperature control on the temperature control field of the substrate to be exposed and measuring the surface temperature of the temperature control field in the substrate to be exposed. And after temperature control is carried out, a second motion path is planned again according to the temperature control field of which the surface temperature still exceeds the preset temperature range, temperature control and surface temperature measurement are carried out on the substrate to be exposed according to the second motion path planned again, and the steps are repeated until the surface temperatures of all the temperature control fields in the substrate to be exposed are within the preset temperature range.
It is understood that, generally, the temperature control is performed according to a default temperature control amount, in order to make the surface temperature of all temperature control fields in the substrate to be exposed within a preset temperature range, multiple times of temperature control may be performed according to a second preset path, which may require a long time, and even a situation that the mask stage is empty to wait for the workpiece stage may occur, which may affect the yield. To avoid this, S20 optionally further includes:
firstly, the surface temperature of each temperature control field of the substrate to be exposed is measured, and the temperature difference between the surface temperature of each temperature control field and the target temperature is obtained.
And secondly, acquiring temperature control quantity according to the temperature difference between the surface temperature of each temperature control field and the target temperature.
And finally, controlling the surface temperature of each temperature control field according to the temperature control quantity.
Wherein, there is certain relation between temperature difference and the temperature-controlled quantity, can confirm the temperature-controlled quantity according to the temperature difference. And carrying out temperature control on each temperature control field according to the obtained temperature control quantity so as to further shorten the surface temperature control time of each temperature control field, reduce the movement times of the workpiece table and save time. It will be appreciated that, to further save time, only the temperature control field in which the surface temperature exceeds the preset temperature range may be temperature controlled.
For example, when the manner of temperature control is air shower, the temperature control amount may be an air amount of the air shower. The workpiece table on which the substrate to be exposed is placed in a pre-moving mode can move according to a first preset path, the surface temperature of each temperature control field in the substrate to be exposed on the workpiece table is sequentially measured through the temperature sensor, the temperature difference value H between the surface temperature of each temperature control field and the target temperature is obtained, and the temperature difference value H and the air volume F of the air shower can have a certain relation, for example, the temperature difference value H and the air volume F of the air shower are in a direct proportion relation, namely F is H multiplied by K, wherein K is a proportionality coefficient between the air volume F of the air shower and the temperature difference value H. The air flow F of the air shower can be determined according to the temperature difference value H, and different air shower air flows are set for the temperature control fields with different temperature difference values, so that the surface temperatures of all the temperature control fields in the substrate to be exposed are all within the preset temperature range in the shortest time.
EXAMPLE III
The third embodiment of the invention provides a manufacturing method of a semiconductor device comprising the exposure method provided by each embodiment.
According to the manufacturing method of the semiconductor device, in the process of exposing the semiconductor device, the exposure method provided in each embodiment is adopted for exposure, the temperature difference of the substrate to be exposed between the alignment operation and the exposure operation is reduced by controlling the surface temperature of the substrate to be exposed, the time difference is shortened, the problems of deformation of the substrate to be exposed and the like caused by overlong time difference and overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed in the process of exposing is improved.
Example four
Fig. 5 is a schematic structural diagram of an exposure apparatus according to a fourth embodiment of the present invention. Referring to fig. 5, an exposure apparatus according to an embodiment of the present invention includes:
the exposure device comprises a first workpiece table 11 and a second workpiece table 12, wherein the first workpiece table 11 and the second workpiece table 12 are used for placing a substrate 10 to be exposed; a mask stage 2 for placing a mask 3; a temperature sensor 4 for measuring a surface temperature of the substrate 10 to be exposed; a temperature control device 5 for performing temperature control according to the surface temperature of the substrate 10 to be exposed; the alignment assembly 6 is used for performing alignment treatment on the substrates 10 to be exposed on the first workpiece table 11 and the second workpiece table 12 and performing alignment treatment on the mask 3; and the exposure component is used for executing exposure operation.
It will be appreciated that the exposure apparatus comprises at least two workpiece tables, a first workpiece table 11 and a second workpiece table 12, the first workpiece table 11 being located in the exposure position and the second workpiece table 12 being located in the measurement position, see for example fig. 5.
The exposure assembly may include an illumination unit 7 and an objective lens 8 for providing illumination, and the light emitted from the illumination unit 7 is transmitted through the mask 3 and irradiated onto the substrate 10 to be exposed on the first workpiece stage 11 at the exposure position through the objective lens 8, and the substrate 10 to be exposed on the first workpiece stage 11 is exposed according to the pattern on the mask 3.
When the substrate 10 to be exposed at the exposure position is exposed, the substrate 10 to be exposed on the second stage 12 at the measurement position may be temperature-controlled, and the alignment assembly 6 may align the substrate 10 to be exposed on the second stage 12. When the substrate 10 to be exposed on the first workpiece table 11 at the exposure position is exposed, the substrate 10 to be exposed on the second workpiece table 12 at the measurement position is moved to the exposure position, the mask 3 is aligned, and after the mask 3 is aligned, the exposure device exposes the substrate 10 to be exposed at the exposure position through the exposure assembly.
The exposure device provided by the fourth embodiment of the invention shortens the time difference between the alignment operation and the exposure operation of the substrate to be exposed, and controls the temperature before the alignment operation of the substrate to be exposed, so that the temperature difference between the alignment treatment and the exposure operation of the substrate to be exposed is reduced, the problem of deformation of the substrate to be exposed caused by a large temperature difference of the substrate to be exposed is avoided, and the accuracy of the substrate to be exposed during exposure is improved.
Fig. 6 is a schematic structural diagram of another exposure apparatus according to a fourth embodiment of the present invention. Alternatively, referring to fig. 6, the exposure apparatus further includes: and a measuring frame 9 disposed above the second workpiece stage 12, the temperature sensor 4, the temperature control device 5, and the alignment assembly 6 being fixed to the measuring frame 9.
In order to reduce the path of the movement path of the first and second work head, the distance between the temperature sensor 4, the temperature control device 5 and the alignment assembly 6 is reduced as far as conditions allow.
The temperature of the substrate to be exposed can be controlled in various ways, optionally, the temperature control device 5 can comprise a wind shower component, and the temperature of the substrate to be exposed is controlled in a wind shower manner.
Alternatively, the alignment assembly 6 may comprise an objective off-axis measurement device.
The substrate 10 to be exposed may be subjected to an alignment process by an objective off-axis measurement device. It can be understood that, for the convenience of subsequent operations, the coordinate system in the exposure process can be unified, and the coordinate system can be unified by using the objective lens off-axis measuring device.
Since the workpiece stage is movable, optionally, the exposure apparatus further includes: and a driving device for driving the first and second work tables 11 and 12 to move.
EXAMPLE five
The fifth embodiment is a specific preferred example of the second embodiment.
On the basis of the above-described embodiments, there are various methods of measuring the surface temperature of the substrate to be exposed by the temperature sensor and performing temperature control according to the surface temperature of the substrate to be exposed, and a detailed description will be given below with respect to typical examples.
Illustratively, the manner of temperature control is air showering. The temperature control field is planned first, and the surface of the substrate to be exposed can be divided into a plurality of temperature control fields with the same size.
Fig. 7 is a flowchart of a temperature control method according to a fifth embodiment of the present invention.
Referring to fig. 7, after the temperature control fields are planned, the first preset path and the second preset path are set to be the same, and all the temperature control fields can be passed through. And performing air shower on each temperature control field of the substrate to be exposed according to a second preset path.
And sequentially measuring the surface temperature of each temperature control field of the substrate to be exposed according to a first preset path after the air shower.
And judging whether the surface temperatures of all the temperature control fields are within a preset temperature range, if so, waiting for alignment processing of the substrate to be exposed, otherwise, repeating the steps of air showering and surface temperature measurement until the surface temperatures of all the temperature control fields are within the preset temperature range.
In the temperature control method, the air shower is performed on each temperature control field, so that the temperature control of each temperature control field can be ensured, and only the first preset path and the second preset path need to be planned once, which is more convenient.
Fig. 8 is a flowchart of another temperature control method according to a fifth embodiment of the present invention.
Referring to fig. 8, in order to save time, only a temperature control field with a surface temperature exceeding a preset temperature range may be subjected to temperature control, and the temperature control mode is also wind showering.
The temperature control fields are planned first, and then the surface temperatures of the temperature control fields of the substrate to be exposed can be measured sequentially according to a first preset path, wherein the first preset path can pass through all the temperature control fields.
And then carrying out air shower on the temperature control field according to a second preset path and measuring the surface temperature of the temperature control field subjected to air shower, wherein the second preset path only passes through the temperature control field of which the surface temperature exceeds a preset temperature range.
And judging whether the surface temperature of the temperature control field after air shower is within a preset temperature range, if so, waiting for alignment processing of the substrate to be exposed, otherwise, replanning a second motion path, wherein the replanned second motion path still only passes through the temperature control field of which the surface temperature exceeds the preset temperature range. And repeating the steps of air showering and surface temperature measurement according to the planned second preset path until the surface temperatures of all the temperature control fields are within the preset temperature range.
The temperature control method can only control the temperature of the temperature control field with the surface temperature exceeding the preset temperature range, avoids repeated temperature control of the temperature control field without temperature control, and improves the efficiency of temperature control.
Fig. 9 is a flowchart of another temperature control method according to a fifth embodiment of the present invention.
Referring to fig. 9, in order to further save time and improve the efficiency of controlling the temperature of the substrate to be exposed, the temperature control amount can be adaptively adjusted. For example, if the temperature control mode is also air shower, the temperature control amount is the air volume of the air shower.
The temperature control fields are planned first, and then the surface temperatures of the temperature control fields of the substrate to be exposed can be measured sequentially according to a first preset path, wherein the first preset path can pass through all the temperature control fields.
And then determining the air flow rate according to the temperature difference between the surface temperature of each temperature control field and the target temperature.
And performing air shower on each temperature control field according to respective air shower air quantity according to a second preset path, and measuring the surface temperature of the temperature control field subjected to air shower, wherein the second preset path can be a temperature control field only passing through the surface temperature range exceeding the preset temperature range.
And judging whether the surface temperature of the temperature control field after air shower is within a preset temperature range, if so, waiting for alignment processing of the substrate to be exposed, otherwise, re-planning a second motion path, and repeatedly executing the steps of acquiring air shower air volume, performing air shower, measuring the surface temperature and the like according to the planned second preset path until the surface temperatures of all the temperature control fields are within the preset temperature range.
The temperature control method can determine the air flow according to the temperature difference between the surface temperature of each temperature control field and the target temperature, reduces the movement times of the workpiece table, further saves the time and improves the temperature control efficiency.
By the temperature control method provided by the embodiment of the invention, the surface temperature of the substrate to be exposed can be in the preset temperature range, the temperature difference between the alignment operation and the exposure operation of the substrate to be exposed is reduced, the time difference is shortened, the problems of deformation of the substrate to be exposed and the like caused by overlong time difference and overlarge temperature difference are avoided, and the accuracy of the substrate to be exposed in the exposure process is improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. An exposure method, comprising:
placing a substrate to be exposed on a workpiece table;
measuring the surface temperature of the substrate to be exposed through a temperature sensor, and controlling the temperature according to the surface temperature of the substrate to be exposed;
dividing the surface of the substrate to be exposed into a plurality of temperature control fields, wherein the temperature control fields are obtained by dividing according to a coordinate system where the substrate to be exposed is located when exposure operation is executed;
measuring the surface temperature of each temperature control field of the substrate to be exposed, and acquiring the temperature difference between the surface temperature of each temperature control field and the target temperature;
acquiring temperature control quantity according to the temperature difference between the surface temperature of each temperature control field and the target temperature;
controlling the surface temperature of each temperature control field according to the temperature control quantity;
aligning the substrate to be exposed on the workpiece table and aligning the mask plate on the mask table;
an exposure operation is performed.
2. The exposure method according to claim 1, further comprising, after the temperature control according to the surface temperature of the substrate to be exposed:
and after waiting for a preset time period, carrying out alignment treatment on the substrate to be exposed on the workpiece table.
3. The exposure method according to claim 2, wherein the preset time period t is set when a reticle is replaced1Is composed of
t1＝tpre-N×tmark
Wherein, tpreTime required for mask plate application, tmarkAnd N is the number of the alignment marks in the substrate to be exposed.
4. The exposure method according to claim 2, wherein the preset time period t is set when the reticle is not replaced2Is composed of
t2＝[M-ceil(N×tmark/tfield)]×tfield
Wherein, the substrate to be exposed is divided into a plurality of exposure fields during exposure, M is the number of the exposure fields in the substrate to be exposed, ceil is an upward rounding function, tmarkThe alignment time of each alignment mark in the substrate to be exposed, N is the number of the alignment marks in the substrate to be exposed, tfieldIs the exposure time of each exposure field in the substrate to be exposed.
5. The exposure method according to claim 1, wherein the measuring the surface temperature of the substrate to be exposed by the temperature sensor and the temperature control according to the surface temperature of the substrate to be exposed comprises:
sequentially measuring the surface temperature of the temperature control field of the substrate to be exposed according to a first preset path, and sequentially controlling the temperature of the temperature control field of the substrate to be exposed according to a second preset path;
and repeating the steps to enable the surface temperature of the temperature control field to be within a preset temperature range.
6. The exposure method according to claim 5, wherein the first preset path and the second preset path are the same.
7. The exposure method according to claim 6, wherein the sequentially measuring the surface temperature of the temperature-controlled fields of the substrates to be exposed is performed in synchronization with the sequentially performing temperature control of the temperature-controlled fields of the substrates to be exposed.
8. The exposure method according to claim 5, wherein in the process of repeatedly performing the above steps, if the surface temperature of the temperature controlled field of the measured portion of the substrate to be exposed exceeds the preset temperature range, the second preset path is re-planned, and the temperature of the temperature controlled field of the substrate to be exposed is controlled according to the planned second preset path.
9. The exposure method according to any one of claims 1 to 8, wherein the temperature is controlled by a shower.
10. A method for manufacturing a semiconductor device, comprising the exposure method according to any one of claims 1 to 9.
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| CN112067920B (en) * | 2020-08-06 | 2022-02-25 | 清华大学 | Power semiconductor device |
| US11860555B2 (en) | 2021-03-30 | 2024-01-02 | Changxin Memory Technologies, Inc. | Alignment mark count acquiring method and device |
| CN115903941A (en) * | 2021-08-20 | 2023-04-04 | 长鑫存储技术有限公司 | Temperature control device and temperature control method |
| CN115877665A (en) | 2021-09-29 | 2023-03-31 | 长鑫存储技术有限公司 | Temperature control device and temperature control method |
| CN113917804A (en) * | 2021-11-03 | 2022-01-11 | 广州粤芯半导体技术有限公司 | Exposure system and cooling method thereof |
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| WO2008112673A2 (en) * | 2007-03-12 | 2008-09-18 | Tokyo Electron Limited | Dynamic temperature backside gas control for improved within-substrate processing uniformity |
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