CN110361938A - A kind of manufacturing method of exposure method and semiconductor devices - Google Patents
A kind of manufacturing method of exposure method and semiconductor devices Download PDFInfo
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- CN110361938A CN110361938A CN201810253594.5A CN201810253594A CN110361938A CN 110361938 A CN110361938 A CN 110361938A CN 201810253594 A CN201810253594 A CN 201810253594A CN 110361938 A CN110361938 A CN 110361938A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
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- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
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- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides the manufacturing method of a kind of exposure method and semiconductor devices, the present invention is by the way that substrate to be exposed to be placed in work stage；Temperature control is carried out by the surface temperature of substrate to be exposed described in temperature sensor measurement, and according to the surface temperature of the substrate to be exposed；Registration process is carried out to the substrate to be exposed in the work stage and registration process is carried out to the mask in mask platform；Execute exposing operation.Technical solution provided by the invention, temperature control is carried out by treating exposed substrate, reduce temperature difference of the substrate to be exposed between alignment function and exposing operation, avoid temperature gap it is excessive caused by substrate deformation to be exposed the problems such as, improve accuracy when substrate to be exposed is exposed.
Description
Technical field
The present embodiments relate to photoetching technique more particularly to the manufacturing methods of a kind of exposure method and semiconductor devices.
Background technique
Photoetching is a main technique in planar ransistor and integrated circuit production.With the requirement to photoetching technique
It is higher and higher, need to reduce the error generated during photolithographic exposure.
Alignment is one of three norms of litho machine, and progressive with node, alignment index request is higher and higher, needs to examine
The error of worry is also more and more, will take in index budget.In litho machine, silicon wafer takes from the valut of external environment
It after out, is first put on prealignment platform and carries out prealignment, be then manually placed into work stage (internal environment) and be aligned by machinery again,
Temperature is T1 at this time.After having temperature difference, silicon wafer to be brought to internal environment due to internal and external environment, thermal expansion stress does not discharge.And
It is synchronous with mask is uploaded to upload silicon wafer, but mask upload time is long, after silicon wafer alignment actions, when also needing one section
Between could start mask registration, and then carry out silicon wafer exposure.And silicon wafer has carried out hot friendship with ambient enviroment in the process
It changes, temperature becomes T2 from T1.Silicon temperature is T2 when exposing, and its temperature is T1 when silicon wafer alignment, and silicon wafer is two kinds of fields
There is deformation under scape, will affect multiplying power between the field of alignment, to increase overlay error.
Summary of the invention
The present invention provides the manufacturing method of a kind of exposure method and semiconductor devices, excludes to be caused by temperature change to realize
Silicon wafer deformation influenced caused by lithographic accuracy, improve exposure accuracy purpose.
In a first aspect, the embodiment of the invention provides a kind of exposure methods, comprising:
Substrate to be exposed is placed in work stage；
By the surface temperature of substrate to be exposed described in temperature sensor measurement, and according to the surface of the substrate to be exposed
Temperature carries out temperature control；
Registration process is carried out to the substrate to be exposed in the work stage and the mask in mask platform is aligned
Processing；
Execute exposing operation.
Optionally, after the progress temperature control according to the surface temperature of substrate to be exposed, further includes:
It waits preset time period and then registration process is carried out to the substrate to be exposed in the work stage.
Optionally, when replacing mask, the preset time period t1For
t1=tpre-N×tmark
Wherein, tpreThe time required to mask adjustment of the printing plate, tmarkFor in substrate to be exposed when the alignment of each alignment mark
Between, N is the number of alignment mark in substrate to be exposed.
Optionally, when being changed without mask, the preset time period t2For
t2=[M-ceil (N × tmark/tfield)]×tfield
Wherein, multiple exposure fields are divided into when the exposing substrate to be exposed, M is of exposure field in substrate to be exposed
Number, ceil are the function that rounds up, tmarkFor the alignment time of each alignment mark in substrate to be exposed, N is substrate to be exposed
The number of middle alignment mark, tfieldFor the time for exposure of each exposure field in substrate to be exposed.
Optionally, the surface of the substrate to be exposed is divided into multiple temperature control fields.
Optionally, the temperature control field is to be drawn according to the coordinate system where substrate to be exposed described when executing exposing operation
Get.
Optionally, the surface temperature by temperature sensor measurement substrate to be exposed, and according to substrate to be exposed
Surface temperature carries out temperature control
The surface temperature of the temperature control field of substrate to be exposed is successively measured according to the first preset path, and default according to second
The temperature control field that exposed substrate is successively treated in path carries out temperature control；
Above-mentioned steps are repeated so that the surface temperature of temperature control field is located in preset temperature range.
Optionally, first preset path is identical with second preset path.
Optionally, the surface temperature of the temperature control field for successively measuring substrate to be exposed successively treats exposed substrate with described
Temperature control field carry out synchronous temperature control execution.
Optionally, it is described repeat above-mentioned steps during, if measurement part substrate to be exposed temperature control field table
Face temperature exceeds preset temperature range, then is planned again the second preset path, according to the second preset path after planning
The temperature control field for treating exposed substrate carries out temperature control.
Optionally, the surface temperature by temperature sensor measurement substrate to be exposed, and according to substrate to be exposed
Surface temperature carries out temperature control
The surface temperature for measuring each temperature control field of substrate to be exposed obtains the surface temperature and target temperature of each temperature control field
Temperature gap between degree；
Temperature control amount is obtained according to the temperature gap between the surface temperature and target temperature of each temperature control field；
Temperature control is carried out according to surface temperature of the temperature control amount to each temperature control field.
Optionally, the temperature controlled mode is wind leaching.
Second aspect, the embodiment of the invention also provides a kind of manufacturing methods of semiconductor devices, including any of the above-described institute
The exposure method stated.
The present invention provides the manufacturing methods of a kind of exposure method and semiconductor devices, by the way that substrate to be exposed to be placed on
In work stage；By the surface temperature of substrate to be exposed described in temperature sensor measurement, and according to the table of the substrate to be exposed
Face temperature carries out temperature control；Registration process is carried out to the substrate to be exposed in the work stage and to the mask in mask platform
Version carries out registration process；Exposing operation is executed, temperature difference of the substrate to be exposed between alignment function and exposing operation is reduced,
Avoid temperature gap it is excessive caused by substrate deformation to be exposed the problems such as, improve standard when substrate to be exposed is exposed
Exactness.
Detailed description of the invention
In order to more clearly illustrate the technical scheme of the exemplary embodiment of the present invention, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is present invention a part of the embodiment to be described
Attached drawing, rather than whole attached drawings without creative efforts, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of flow chart for exposure method that the embodiment of the present invention one provides；
Fig. 2 is the division schematic diagram of temperature control field in a kind of substrate to be exposed of the offer of the embodiment of the present invention one；
Fig. 3 is a kind of coordinate system relationship vectors figure that the embodiment of the present invention one provides；
Fig. 4 is the division schematic diagram of temperature control field in a kind of substrate to be exposed provided by Embodiment 2 of the present invention；
Fig. 5 is a kind of structural schematic diagram for exposure device that the embodiment of the present invention four provides；
Fig. 6 is the structural schematic diagram for another exposure device that the embodiment of the present invention four provides；
Fig. 7 is a kind of flow chart for temprature control method that the embodiment of the present invention five provides；
Fig. 8 is the flow chart for another temprature control method that the embodiment of the present invention five provides；
Fig. 9 is the flow chart for another temprature control method that the embodiment of the present invention five provides.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 1 is a kind of flow chart for exposure method that the embodiment of the present invention one provides.Referring to Fig. 1, the embodiment of the present invention is mentioned
The exposure method of confession, comprising:
S10: substrate to be exposed is placed in work stage.
It is understood that work stage be it is transportable, under normal circumstances, work stage may be at two positions, one
A is corresponding exposure position vertical with mask, for carrying out the exposing operation of substrate to be exposed, the other is and temperature sensing
The corresponding measurement position of device, for carrying out the operation such as substrate registration process to be exposed.
Manipulator takes out substrate to be exposed from valut, and first substrate to be exposed is placed on prealignment platform to be exposed
Substrate carries out prealignment, and substrate prealignment to be exposed is completed and then substrate to be exposed is placed on measurement position by manipulator
On work stage on.
S20: by the surface temperature of temperature sensor measurement substrate to be exposed, and according to the surface temperature of substrate to be exposed
Carry out temperature control.
Temperature sensor can directly measure the surface temperature of substrate to be exposed, and illustratively, temperature sensor can be
Non-contact infrared measurement sensor can measure the surface temperature of each region in substrate to be exposed with this, rather than wait expose
Environment temperature where light substrate is influenced to avoid the temperature of measurement by distance between temperature sensor and substrate to be exposed
Existing measurement error, and may be implemented to monitor the temperature difference between substrate each region to be exposed, the to be exposed of measurement can be improved
The accuracy of substrate surface temperatures.
Temperature control is carried out according to the surface temperature of substrate to be exposed, temperature of the substrate to be exposed when measuring on position can be made
Temperature when spending close to exposing operation is avoided with minimizing the deformation of substrate to be exposed caused by temperature difference because to be exposed
Exposure error caused by substrate deformation.
It should be noted that can treat exposed substrate in several ways carries out temperature control, illustratively, temperature control
The mode of system can drench for wind.
S30: registration process is carried out to the substrate to be exposed in work stage and the mask in mask platform is aligned
Processing.
By carry out temperature control after substrate to be exposed carry out registration process, and by place registration process after base to be exposed
The work stage at bottom is moved to exposure position from measurement.
Mask in mask platform carries out registration process according to the actual situation, specifically, when not needing replacement mask,
Default mask has completed registration process；When needing replacing mask, mask is taken out from version library by manipulator,
The mask of taking-up is subjected to prealignment processing, after the completion of the processing of mask prealignment, then to the registration process of mask.
S40: exposing operation is executed.
The light projection that lighting unit issues is irradiated in place on the mask in mask platform, transmitted through mask by object lens
In in the substrate to be exposed in the work stage of exposure position, the substrate to be exposed in work stage is carried out according to the pattern on mask
Exposure.
Exposure method provided in an embodiment of the present invention makes substrate to be exposed by controlling the surface temperature of substrate to be exposed
Surface temperature difference between registration process and exposing operation reduces, avoid temperature gap it is excessive caused by base to be exposed
The problems such as bottom deformation, improves accuracy when substrate to be exposed is exposed.
Optionally, after according to the progress temperature control of the surface temperature of substrate to be exposed, further includes: wait preset time period
And then registration process is carried out to the substrate to be exposed in work stage.
In view of in subsequent operation, it is understood that there may be the substrate to be exposed in mask registration process or exposure position work stage
Situations such as being exposed operation directly carries out substrate alignment to be exposed after treating exposed substrate and carrying out temperature control
After processing, it can't be exposed operation, but need to wait for a period of time.Therefore, in order to further decrease substrate to be exposed
Time difference between registration process and exposing operation improves the accuracy of exposing operation, can treat exposed substrate and carry out temperature
After control, waits preset time period to treat exposed substrate again later and carry out registration process.
It is understood that when substrate to be exposed is exposed operation, need determines according to actual conditions mask whether
The case where needing replacing, whether being replaced according to mask determines the preset time period that substrate to be exposed needs to wait.
Optionally, when replacing mask, preset time period t1For
t1=tpre-N×tmark
Wherein, tpreThe time required to mask adjustment of the printing plate, tmarkFor in substrate to be exposed when the alignment of each alignment mark
Between, N is the number of alignment mark in substrate to be exposed.
When mask needs replacing, mask adjustment of the printing plate again, t the time required to mask adjustment of the printing plate are neededpreIncluding mask
The time of the operations such as adjustment of the printing plate and the processing of mask prealignment, the time are fixed and invariable substantially.
The registration process of substrate to be exposed is to carry out alignment function according to the alignment mark in substrate to be exposed, will be wait expose
All alignment marks in light substrate complete registration process after being aligned one by one, the alignment time of each alignment mark is essentially identical.
When needing replacing mask, preset time period t1It can be calculated since the adjustment of the printing plate moment of mask, so that mask
When version adjustment of the printing plate is completed, the registration process of substrate to be exposed is completed at the same time, and the time that substrate to be exposed waits is shortened as far as possible, is improved
Time difference of the substrate to be exposed between registration process and exposing operation is reduced as far as possible, avoids time difference mistake by working efficiency
It is long and the surface temperature of substrate to be exposed is caused to change, so that substrate to be exposed deformation is occurred, to improve
Accuracy when substrate to be exposed is exposed.
Optionally, when being changed without mask, preset time period t2For
t2=[M-ceil (N × tmark/tfield)]×tfield
Wherein, multiple exposure fields are divided into when exposing substrate to be exposed, M is the number of exposure field in substrate to be exposed,
Ceil is the function that rounds up, tmarkFor the alignment time of each alignment mark in substrate to be exposed, N is right in substrate to be exposed
The number of fiducial mark note, tfieldFor the time for exposure of each exposure field of substrate to be exposed.
It is understood that substrate to be exposed can first be divided into multiple exposure fields, each substrate to be exposed in exposure
The mode for dividing exposure field can be identical, and each exposure field after division is successively exposed, the time for exposure of each exposure field
It is identical.
When not needing replacement mask, preset time period t2It can be exposed since the substrate to be exposed in exposure position
When start to calculate.It calculates in substrate alignment process to be exposed, the substrate to be exposed in exposure position work stage can be complete
At the exposure field number of exposure, and round up.The preset time period t of waiting2For the exposure field that is divided in substrate to be exposed
Number can be completed when subtracting registration process exposure exposure field number after remaining exposure field be exposed required exposure
Time, after the completion of ensuring to expose the exposing substrate to be exposed on position, the substrate to be exposed measured on position is completed at the same time at alignment
The time that the waiting of the substrate to be exposed measured on position moves to exposure position is shortened as far as possible, improves working efficiency by reason, will be to be exposed
Time difference of the substrate between registration process and exposing operation reduces as far as possible.
Optionally, the surface of substrate to be exposed is divided into multiple temperature control fields.
Fig. 2 is the division schematic diagram of temperature control field in a kind of substrate to be exposed of the offer of the embodiment of the present invention one.Referring to fig. 2,
It carries out the surface of substrate to be exposed first being divided into multiple temperature control fields in temperature controlled processes treating exposed substrate, with
The temperature that different zones in exposed substrate surface can be treated is controlled, the more accurate surface temperature for treating exposed substrate
Degree is controlled.Wherein, the size of each temperature control field can be identical.The division of temperature control field is referred to exposure field and is divided,
It can also be divided according to other, to its specific division methods and with no restrictions.
Optionally, temperature control field is to be divided to obtain according to the coordinate system where substrate to be exposed when executing exposing operation
's.
It is understood that the exposing operation of the registration process of mask and substrate to be exposed is generally all on exposure position
It is to be carried out under coordinate system on the basis of object lens, and on measurement position, substrate to be exposed carries out temperature control and registration process one
As carry out under coordinate on the basis of by work stage.In order to easy to operate, the coordinate system in exposure process can be unified, i.e., to
Exposed substrate carries out the temperature for dividing substrate to be exposed in temperature controlled processes according to the coordinate system where when exposing substrate to be exposed
Control field.
Fig. 3 is a kind of coordinate system relationship vectors figure that the embodiment of the present invention one provides.It is illustratively, to be exposed referring to Fig. 3
It is to establish object lens coordinate system by origin of object lens center on the basis of object lens coordinate system when substrate is exposed.It is exposed due to treating
It is fixed that light substrate, which carries out temperature controlled temperature control device, therefore object center and temperature under object lens coordinate system
Reference distance P between control devicerefIt is fixed.Since substrate to be exposed is in work stage, generally it is with work stage center
Reference position, the distance between each temperature control field and temperature control device P in substrate to be exposediIt also, can be with it was determined that therefore
According to reference distance PrefThe distance between each temperature control field and temperature control device PiDetermine each temperature control field in object lens coordinate
Position under system.The moving distance P of the work stage when temperature control field carries out temperature control can also be determined with thisws_i, Pws_i=Pi-
Pref, wherein Pref、PiAnd Pws_iIt is vector value.
Embodiment two
The present embodiment can provide a kind of optional example based on above-described embodiment.In the base of above-described embodiment
On plinth, which includes:
S10: substrate to be exposed is placed in work stage.
S20: by the surface temperature of temperature sensor measurement substrate to be exposed, and according to the surface temperature of substrate to be exposed
Carry out temperature control.
Wherein, there are many this step concrete methods of realizing, typical case is described in detail below, but is not constituted to this
The limitation of application.When the surface of substrate to be exposed is divided into multiple temperature control fields, optionally, S20 includes:
Firstly, successively measuring the surface temperature of the temperature control field of substrate to be exposed according to the first preset path, and according to
The temperature control field that two preset paths successively treat exposed substrate carries out temperature control.
Secondly, repeating above-mentioned steps so that the surface temperature of temperature control field is located in preset temperature range.
Wherein, the first preset path and the second preset path according to actual needs carry out planning and adjusting, can according to
Total move distance the smallest principle programming movement path.
Preset temperature range is the temperature range with the difference of default temperature between setting value.Default temperature and setting value
It can be set according to the actual situation.
The surface temperature that each temperature control field in exposed substrate can be treated by temperature sensor measures, and to each
Temperature control field successively carries out temperature control, so that the surface temperature of temperature control field is located in preset temperature range.When there are surface temperatures
More than preset temperature range temperature control field when, can repeat the above steps, until substrate to be exposed in all temperature control fields surface
Temperature completes the temperature control for treating exposed substrate in preset temperature range.
It is understood that successively measuring the surface temperature of each temperature control field of substrate to be exposed and successively to base to be exposed
Each temperature control field at bottom carries out the sequence between temperature control with no restrictions, illustratively, can first measure each temperature control field
Surface temperature, then carry out temperature control；Temperature control first can also be carried out to each temperature control field, then measure the table after temperature control
Face temperature is also possible to carry out temperature controlled to each temperature control field while measuring its surface temperature.
S30: registration process is carried out to the substrate to be exposed in the work stage and the mask in mask platform is carried out
Registration process.
S40: exposing operation is executed.
Exposure method provided in an embodiment of the present invention, by measuring the surface temperature of each temperature control field of substrate to be exposed and right
Each temperature control field carries out temperature control, makes substrate surface temperatures to be exposed in preset temperature range, makes substrate to be exposed right
Temperature difference between quasi- operation and exposing operation reduces, and the time difference shortens, and avoids that the time difference is too long, temperature gap is excessive and leads
The problems such as substrate deformation to be exposed caused, improve accuracy when substrate to be exposed is exposed.
Optionally, the first preset path is identical with the second preset path.
Illustratively, the first preset path and the second preset path can be by temperature controls all in substrate to be exposed field
Motion path.Specifically, when temperature controlled mode is that wind drenches, can first drive place the work stage of substrate to be exposed according to
The movement of first preset path, the surface of each temperature control field in the substrate to be exposed in work stage is successively measured by temperature sensor
Then temperature drives work stage to treat each temperature control field in exposed substrate according to identical path and carries out wind leaching.According still further to
Whether one preset path measures the surface temperature of each temperature control field, confirm the surface temperature of each temperature control field in preset temperature range
It is interior, if when not in preset temperature range, continue drive work stage treated according to the first preset path it is each in exposed substrate
Temperature control field carries out wind leaching, and the surface temperature of each temperature control field is measured according to identical preset path, until in substrate to be exposed
The surface temperature of all temperature control fields is in preset temperature range.
It is understood that being measured each in substrate to be exposed when the first preset path is identical with the second preset path
The path of the surface temperature of temperature control field is identical with to each temperature control field temperature controlled path of progress.In order to shorten to base to be exposed
Bottom carries out the time of temperature control and measurement substrate surface temperatures to be exposed and number optionally successively measures substrate to be exposed
Temperature control field surface temperature with successively treat exposed substrate temperature control field carry out temperature control can it is synchronous execute.It can be
It is temperature controlled simultaneously to treat exposed substrate progress, the surface temperature of synchro measure substrate to be exposed.
Wherein, it is longer that each temperature control field progress surface temperature measurement and temperature control needs in exposed substrate are treated every time
Time, and may temperature control field of the surface temperature in preset temperature range carry out duplicate temperature control operation, out
It now wastes time and the phenomenon that resource.
Optionally, the surface temperature that the temperature control field of substrate to be exposed is successively measured according to the first preset path is repeated,
And according to the second preset path successively treat exposed substrate temperature control field carry out it is temperature controlled during, if measurement part
The temperature control field surface temperature of substrate to be exposed exceeds preset temperature range, then is planned again the second preset path, according to
The temperature control field that the second preset path after planning treats exposed substrate carries out temperature control.
Fig. 4 is the division schematic diagram of temperature control field in a kind of substrate to be exposed provided by Embodiment 2 of the present invention.Referring to fig. 4,
Only the surface temperature of part temperature control field is more than preset temperature range.In order to save time and resource, when part substrate to be exposed
Temperature control field surface temperature exceed preset temperature range when, can plan the second motion path again, plan again second fortune
Dynamic path only passes through surface temperature and exceeds the temperature control field of preset temperature range, and is no longer pass through surface temperature in preset temperature range
Interior temperature control field is reduced with this and treats the exposed substrate progress temperature controlled time.
Temperature control is carried out according to the temperature control field that the second preset path after planning successively treats exposed substrate, and according to rule
The surface temperature for the temperature control field that the second preset path after drawing successively treats exposed substrate measures, and can also successively treat
The temperature control field of exposed substrate carries out surface temperature that is temperature controlled while treating temperature control field in exposed substrate and measures.It carries out
After temperature control, the second motion path is planned in the temperature control field that preset temperature range is still exceeded according to surface temperature again, according to
The second motion path after planning again treats exposed substrate and carries out temperature control and surface temperature measurement, repeats the above steps,
Until the surface temperature of all temperature control field is in preset temperature range in substrate to be exposed.
It is understood that under normal circumstances, temperature control can be carried out according to the temperature control amount of default, in order to make base to be exposed
The surface temperature of all temperature control fields is in preset temperature range in bottom, it may be necessary to carry out repeatedly temperature according to the second preset path
Degree control, this may require that longer time, in some instances it may even be possible to the case where will appear mask platform vacant waiting work stage, influence yield.
In order to avoid such case generation, optionally, S20 further include:
Firstly, measure the surface temperature of each temperature control field of substrate to be exposed, obtain the surface temperature of each temperature control field with
Temperature gap between target temperature.
Secondly, obtaining temperature control amount according to the temperature gap between the surface temperature and target temperature of each temperature control field.
Finally, carrying out temperature control according to surface temperature of the temperature control amount to each temperature control field.
Wherein, there are certain relationships between temperature gap and temperature control amount, and temperature control amount can be determined according to temperature gap.Root
Temperature control is carried out to each temperature control field so that the surface temperature control time of each temperature control field is further according to the temperature control amount of acquisition
It reduces, reduces the times of exercise of work stage, save the time.It is understood that in order to further save the time, it can be only to table
Face temperature is more than that the temperature control field of preset temperature range carries out temperature control.
Illustratively, when temperature controlled mode is that wind drenches, temperature control amount can be the air quantity of wind leaching.It can first drive and put
The work stage for setting substrate to be exposed is moved according to the first preset path, successively measured by temperature sensor in work stage wait expose
The surface temperature of each temperature control field in light substrate, obtains the temperature gap between the surface temperature and target temperature of each temperature control field
H, temperature gap H and wind leaching air quantity F between can have certain relationship, for example, temperature gap H and wind leaching air quantity F it
Between proportional, i.e. F=H × K, wherein K be wind leaching air quantity F and temperature gap H between proportionality coefficient.It then can root
The air quantity F that wind leaching is determined according to temperature gap H is arranged different wind to the temperature control field of different temperatures difference and drenches air quantity, guaranteed with this
The surface temperature of all temperature control fields is completely in preset temperature range within the shortest time in substrate to be exposed.
Embodiment three
The embodiment of the present invention three provides a kind of semiconductor devices of exposure method provided including the various embodiments described above
Manufacturing method.
The manufacturing method of the semiconductor devices, in carrying out semiconductor devices exposure process, using in the various embodiments described above
The exposure method of offer is exposed, by controlling the surface temperature of substrate to be exposed, make substrate to be exposed in alignment function and
Temperature difference between exposing operation reduces, and the time difference shortens, and avoids caused by the time difference is too long, temperature gap is excessive wait expose
The problems such as light substrate deformation, improves accuracy when substrate to be exposed is exposed.
Example IV
Fig. 5 is a kind of structural schematic diagram for exposure device that the embodiment of the present invention four provides.Referring to Fig. 5, the present invention is implemented
The exposure device that example provides, comprising:
First work stage 11 and second workpiece platform 12, the first work stage 11 and second workpiece platform 12 are for placing base to be exposed
Bottom 10；Mask platform 2, for placing mask 3；Temperature sensor 4, for measuring the surface temperature of substrate 10 to be exposed；Temperature
Control device 5, for carrying out temperature control according to the surface temperature of substrate 10 to be exposed；To prospective component 6, for the first workpiece
Substrate to be exposed 10 on platform 11 and second workpiece platform 12 carries out registration process and carries out registration process to mask 3；Exposure
Component, for executing exposing operation.
It is understood that two work stages, the first work stage 11 and second workpiece platform 12 are included at least in exposure device,
Illustratively, referring to Fig. 5, the first work stage 11 is located at exposure position, and second workpiece platform 12 is located at measurement position.
Exposure components may include providing the structures such as lighting unit 7 and the object lens 8 of illumination, and the light that lighting unit 7 issues is saturating
It penetrated mask 3 to be irradiated to by object lens 8 in the substrate to be exposed 10 being located in the first work stage 11 of exposure position, according to mask
Pattern in version 3 is exposed the substrate to be exposed 10 in the first work stage 11.
It, can be to the second workpiece platform 12 for being located at measurement position when the substrate to be exposed 10 to exposure position is exposed operation
On substrate to be exposed 10 carry out temperature control, and by prospective component 6 to the substrate to be exposed 10 on second workpiece platform 12 into
Row registration process.After the substrate to be exposed 10 in the first work stage 11 for being located at exposure position completes exposure, measurement position will be located at
Second workpiece platform 12 on substrate to be exposed 10 be moved to exposure position, mask 3 carry out registration process, mask 3 complete pair
After quasi- processing, exposure device is exposed operation to the substrate to be exposed 10 on exposure position by exposure components.
The exposure device that the embodiment of the present invention four provides, by shorten substrate alignment function to be exposed and exposing operation it
Between time difference, and substrate to be exposed carry out alignment function before carry out temperature control, reduce at substrate alignment to be exposed
Be temperature difference between reason and exposing operation, avoid base reservoir temperature difference to be exposed it is big caused by substrate deformation to be exposed ask
Topic, improves accuracy when substrate to be exposed is exposed.
Fig. 6 is the structural schematic diagram for another exposure device that the embodiment of the present invention four provides.It optionally, should referring to Fig. 6
Exposure device, further includes: the top of second workpiece platform 12, temperature sensor 4, temperature control device 5 is arranged in gage frame 9
It is each attached in gage frame 9 with to prospective component 6.
In order to reduce the first work stage and second workpiece platform movement routine distance, when conditions permit, temperature
It spends sensor 4, temperature control device 5 and the distance between prospective component 6 is reduced as far as possible.
Exposed substrate can be treated in many ways and carries out temperature control, and optionally, temperature control device 5 may include wind leaching
Component treats exposed substrate in such a way that wind drenches and carries out temperature control.
It optionally, may include the off-axis measuring device of object lens to prospective component 6.
Exposed substrate 10 can be treated by the off-axis measuring device of object lens carries out registration process.It is understood that in order to
The convenience of subsequent operation can carry out unification to the coordinate system in exposure process, can use the off-axis measuring device of object lens and realize
Unification to coordinate system.
Due to work stage be it is transportable, optionally, the exposure device, further includes: driving element, for drive first
Work stage 11 and second workpiece platform 12 are moved.
Embodiment five
The present embodiment five is the specific preferred embodiment in above-described embodiment two.
On the basis of the above embodiments, by the surface temperature of temperature sensor measurement substrate to be exposed, and according to
The surface temperature of exposed substrate be described in detail below with regard to typical case there are many kinds of temperature controlled implementation methods.
Illustratively, temperature controlled mode is wind leaching.It first plans temperature control field, the surface of substrate to be exposed can be divided
For multiple temperature control fields of the same size.
Fig. 7 is a kind of flow chart for temprature control method that the embodiment of the present invention five provides.
Referring to Fig. 7, after planning temperature control field, the first preset path of setting is identical with the second preset path, and can be through
Cross all temperature control fields.Wind leaching is carried out according to each temperature control field that the second preset path treats exposed substrate.
The surface temperature of each temperature control field of substrate to be exposed is successively measured after wind leaching according to the first preset path.
Judge whether the surface temperature of all temperature control fields is located in preset temperature range, if so, waiting for be exposed
The registration process of substrate, if it is not, the step of then repeating wind leaching and measurement surface temperature, until the surface temperature of all temperature control fields
Degree is respectively positioned in preset temperature range.
In the temprature control method, wind leaching is carried out for each temperature control field, it can be ensured that carry out to each temperature control field
Temperature control, it is only necessary to plan first preset path and the second preset path, it is more convenient.
Fig. 8 is the flow chart for another temprature control method that the embodiment of the present invention five provides.
It, in order to save time, can also temperature control field progress temperature of the surface temperature beyond preset temperature range referring to Fig. 8
Degree control, illustratively, temperature controlled mode or wind leaching.
It first plans temperature control field, each temperature control field of substrate to be exposed then first can be successively measured according to the first preset path
Surface temperature, the first preset path can pass through all temperature control fields.
Then wind leaching is carried out to temperature control field according to the second preset path and measures the surface temperature of the temperature control field after carrying out wind leaching
Degree, wherein the second preset path only passes through the temperature control field that surface temperature is more than preset temperature range.
Whether the surface temperature of temperature control field after judging wind leaching is located in preset temperature range, if so, wait for
The registration process of exposed substrate, if it is not, then planning the second motion path again, the second motion path planned again is still only passed through
Cross the temperature control field that surface temperature is more than preset temperature range.Wind leaching and measurement are repeated according to the second preset path after planning
The step of surface temperature, until the surface temperature of all temperature control fields is respectively positioned in preset temperature range.
The temprature control method can surface temperature beyond preset temperature range temperature control field carry out temperature control, keep away
Exempt to carry out duplicate temperature control to not needing to carry out temperature controlled temperature control field again, improves temperature controlled efficiency.
Fig. 9 is the flow chart for another temprature control method that the embodiment of the present invention five provides.
Referring to Fig. 9, in order to further save the time, the temperature controlled efficiency of exposed substrate, being adapted to property are treated in raising
Adjusting temperature control amount.Illustratively, temperature controlled mode or wind leaching, then temperature control amount is the air quantity of wind leaching.
It first plans temperature control field, each temperature control field of substrate to be exposed then first can be successively measured according to the first preset path
Surface temperature, the first preset path can pass through all temperature control fields.
Then determine that wind drenches air quantity according to the temperature gap between the surface temperature and target temperature of each temperature control field.
After being carried out wind leaching by respective wind leaching air quantity to each temperature control field according to the second preset path and measured progress wind leaching
Temperature control field surface temperature, wherein the second preset path can be only by surface temperature be more than preset temperature range a temperature
Control field.
Whether the surface temperature of temperature control field after judging wind leaching is located in preset temperature range, if so, wait for
The registration process of exposed substrate repeats to hold if it is not, then planning the second motion path again according to the second preset path after planning
Row obtains wind leaching air quantity, carries out wind leaching and measurement surface temperature, until the surface temperature of all temperature control fields be respectively positioned on it is pre-
If in temperature range.
The temprature control method can be true according to the temperature gap between the surface temperature and target temperature of each temperature control field
Determine wind leaching air quantity, reduces the times of exercise of work stage, further save the time, improve temperature controlled efficiency.
The temprature control method provided through the embodiment of the present invention can make substrate surface temperatures to be exposed in preset temperature
In range, reduce temperature difference of the substrate to be exposed between alignment function and exposing operation, the time difference shortens, and avoids the time
Caused by difference is too long, temperature gap is excessive the problems such as substrate deformation to be exposed, improve when substrate to be exposed is exposed
Accuracy.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (13)
1. a kind of exposure method characterized by comprising
Substrate to be exposed is placed in work stage；
By the surface temperature of substrate to be exposed described in temperature sensor measurement, and according to the surface temperature of the substrate to be exposed
Carry out temperature control；
Registration process is carried out to the substrate to be exposed in the work stage and registration process is carried out to the mask in mask platform；
Execute exposing operation.
2. exposure method according to claim 1, which is characterized in that described to be carried out according to the surface temperature of substrate to be exposed
After temperature control, further includes:
It waits preset time period and then registration process is carried out to the substrate to be exposed in the work stage.
3. exposure method according to claim 2, which is characterized in that when replacing mask, the preset time period t1For
t1=tpre-N×tmark
Wherein, tpreThe time required to mask adjustment of the printing plate, tmarkFor the alignment time of each alignment mark in substrate to be exposed, N is
The number of alignment mark in substrate to be exposed.
4. exposure method according to claim 2, which is characterized in that when being changed without mask, the preset time period t2
For
t2=[M-ceil (N × tmark/tfield)]×tfield
Wherein, the substrate to be exposed is divided into multiple exposure fields in exposure, and M is the number of exposure field in substrate to be exposed,
Ceil is the function that rounds up, tmarkFor the alignment time of each alignment mark in substrate to be exposed, N is right in substrate to be exposed
The number of fiducial mark note, tfieldFor the time for exposure of each exposure field in substrate to be exposed.
5. exposure method according to claim 1, which is characterized in that the surface of the substrate to be exposed is divided into multiple temperature
Control field.
6. exposure method according to claim 5, which is characterized in that the temperature control field is according to execution exposing operation when institute
What the coordinate system where stating substrate to be exposed was divided.
7. exposure method according to claim 5, which is characterized in that described to pass through temperature sensor measurement substrate to be exposed
Surface temperature, and according to the surface temperature of substrate to be exposed carry out temperature control include:
The surface temperature of the temperature control field of substrate to be exposed is successively measured according to the first preset path, and according to the second preset path
The temperature control field for successively treating exposed substrate carries out temperature control；
Above-mentioned steps are repeated so that the surface temperature of temperature control field is located in preset temperature range.
8. exposure method according to claim 7, which is characterized in that first preset path and the second default road
Diameter is identical.
9. exposure method according to claim 8, which is characterized in that the temperature control field for successively measuring substrate to be exposed
Surface temperature and the temperature control field for successively treating exposed substrate carry out synchronous temperature control execution.
10. exposure method according to claim 7, which is characterized in that it is described repeat above-mentioned steps during, such as
The temperature control field surface temperature that fruit measures part substrate to be exposed exceeds preset temperature range, then carries out again to the second preset path
Planning carries out temperature control according to the temperature control field that the second preset path after planning treats exposed substrate.
11. exposure method according to claim 7, which is characterized in that described to pass through temperature sensor measurement base to be exposed
The surface temperature at bottom, and temperature control is carried out according to the surface temperature of substrate to be exposed and includes:
The surface temperature for measuring each temperature control field of substrate to be exposed, obtain each temperature control field surface temperature and target temperature it
Between temperature gap；
Temperature control amount is obtained according to the temperature gap between the surface temperature and target temperature of each temperature control field；
Temperature control is carried out according to surface temperature of the temperature control amount to each temperature control field.
12. -11 any exposure method according to claim 1, which is characterized in that the temperature controlled mode is wind
Leaching.
13. a kind of manufacturing method of semiconductor devices, which is characterized in that including any exposure side claim 1-12
Method.
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| WO2023019770A1 (en) * | 2021-08-20 | 2023-02-23 | 长鑫存储技术有限公司 | Temperature control apparatus and temperature control method |
| US11860555B2 (en) | 2021-03-30 | 2024-01-02 | Changxin Memory Technologies, Inc. | Alignment mark count acquiring method and device |
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