CN103403852B - 双负载闸配置的消除及剥离处理腔室 - Google Patents

双负载闸配置的消除及剥离处理腔室 Download PDF

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CN103403852B
CN103403852B CN201280010528.6A CN201280010528A CN103403852B CN 103403852 B CN103403852 B CN 103403852B CN 201280010528 A CN201280010528 A CN 201280010528A CN 103403852 B CN103403852 B CN 103403852B
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cavity volume
load lock
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马丁·杰夫·萨里纳斯
P·B·路透
阿尼鲁达·帕尔
杰瑞德·阿哈默德·里
I·优素福
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Abstract

本发明的实施例提供能处理基板的双负载闸室。在一实施例中，双负载闸室包括腔室主体，腔室主体界定互相隔离的第一腔室容积和第二腔室容积。下腔室容积和第二腔室容积中的每一个，经由配置以传送基板的两个开口，能选择性连接至两个处理环境。双负载闸室还包括设在第二腔室容积内的加热基板支撑组件。加热基板支撑组件经配置以支撑及加热放置于上的基板。双负载闸室还包括连接至第二腔室容积的远端等离子体源，用以供应等离子体给第二腔室容积。

Description

双负载闸配置的消除及剥离处理腔室
技术领域
本发明的实施例大体关于制造装置于半导体基板上的方法和设备。更具体而言，本发明的实施例关于包括两个腔室容积的负载闸室，且至少一腔室容积经配置以处理基板。
背景技术
本发明的实施例大体关于制造装置于半导体基板上的方法和设备。更具体而言，本发明的实施例关于负载闸室，负载闸室包括两个负载闸并能处理基板。
超大型集成(ULSI)电路包括超过一百万个电子装置(例如晶体管)，电子装置形成在半导体基板上，例如硅(Si)基板，且协同执行各种装置功能。通常，用于ULSI电路的晶体管为互补式金属氧化物半导体(CMOS)场效应管。CMOS晶体管具有包含多晶硅栅极电极和栅极介电层的栅极结构，栅极结构置于形成于基板的源极区与漏极区之间。
等离子体蚀刻常用于制造晶体管和其他电子装置。在用于形成晶体管结构的等离子体蚀刻工艺期间，一或更多层膜堆迭(例如硅、多晶硅、二氧化铪(HfO2)、二氧化硅(SiO2)、金属材料等层)通常接触包含至少一含卤素气体(例如溴化氢(HBr)、氯气(Cl2)、四氟化碳(CF4)等)的蚀刻剂。此类工艺导致含卤素残留物聚积在已蚀刻特征结构的表面、蚀刻掩模和基板别处上。
当暴露于非真空环境(例如工厂界面或基板储放匣内)及/或在连续处理期间，从蚀刻时沉积的含卤素残留物中会释出气态卤素和卤素基反应物，例如溴(Br2)、氯气(Cl2)、氯化氢(HCl)等。所释出的卤素和卤素基反应物将引起微粒污染，并造成处理系统与工厂界面的内部空间腐蚀及导致基板上的金属层露出部分腐蚀。清洁处理系统与工厂界面及更换遭腐蚀零件是耗时又昂贵的程序。
已开发数种工艺来移除已蚀刻基板上的含卤素残留物。例如，可把已蚀刻基板传送到远端等离子体反应器中，使已蚀刻基板接触气体混合物而将含卤素残留物转化成非腐蚀性挥发化合物，该挥发化合物可经除气并被抽空出反应器。然而，此类工艺需专用的处理腔室和附加步骤，以致增加工具费用、降低制造生产力和产量，因而提高制造成本。
因此，需要改善的方法和设备来从基板移除含卤素残留物。
发明内容
本发明的实施例大体上提供处理基板的设备和方法。具体而言，本发明的实施例提供双负载闸室，该双负载闸室能例如藉由使放在里面的基板接触活性反应组分而处理基板。
本发明的一实施例提供负载闸室。负载闸室包括腔室主体，腔室主体界定互相隔离的第一腔室容积和第二腔室容积。第一腔室容积，经由配置以传送基板的两个开口，能选择性连接至两个处理环境。第二腔室容积选择性连接至两个处理环境的至少一者。负载闸室进一步包括设在第二腔室容积内的加热基板支撑组件，和连接至第二腔室容积来供应等离子体给第二腔室容积的远端等离子体源。加热基板支撑组件经配置以支撑及加热放置于所述加热基板支撑组件上的基板。
本发明的一实施例提供双负载闸室。双负载闸室包括腔室主体，腔室主体界定互相隔离的第一腔室容积和第二腔室容积。第一腔室容积和第二腔室容积中的每一个，经由配置以传送基板的两个开口，能选择性连接至两个分开的相邻环境。双负载闸室还包括设在第二腔室容积内的加热基板支撑组件。加热基板支撑组件经配置以支撑及加热放置于所述加热基板支撑组件上的基板。双负载闸室还包括连接至第二腔室容积的远端等离子体源，用以供应活性反应组分给第二腔室容积。
本发明的另一实施例提供双负载闸室。双负载闸室包括：腔室主体，腔室主体界定互相隔离的第二腔室容积和下负载闸容积；基板支撑组件，经配置以支撑放在第一腔室容积内的基板；及加热基板支撑组件，经配置以支撑及加热放在第二腔室容积内的基板。第一腔室容积和第二腔室容积中的每一个，经由配置以传送基板的两个开口，能选择性连接至两个分开的相邻环境。双负载闸室还包括设在加热基板支撑组件上方的喷洒头组件，其中喷洒头组件经配置以分配一或更多处理气体到第二腔室容积。
本发明的又一实施例提供从基板移除含卤素残留物的方法。方法包括将基板经由双负载闸室的送进负载闸传送到基板处理系统，其中双负载闸室耦接至基板处理系统，以及在基板处理系统中，以包含卤素的化学剂蚀刻基板。方法还包括在双负载闸室的送出负载闸中，从已蚀刻基板移除含卤素残留物，其中在单一腔室主体中，送出负载闸与送进负载闸互相隔离。移除含卤素残留物包括加热送出负载闸的加热基板支撑组件上的已蚀刻基板，以及使处理气体流入送出负载闸。
上述方法中，其中移除含卤素残留物包括：利用围绕加热基板支撑组件的箍衬套，建立对称处理环境。
上述方法中，其中流入处理气体包括：在远端等离子体源中产生处理气体的等离子体。
附图说明
可藉由参考实施例(其中一些实施例在附图中示出)来获得在上文中简短概述过的本发明的更为具体的说明，从而可详细了解本发明的上述特征。然而，应注意附图仅说明本发明典型实施例，故不宜视为限定本发明范围，因为本发明可接纳其他等效实施例。
图1为根据本发明一实施例，的双负载闸室的截面图。
图2为图1的双负载闸室的截面图，其中升降箍处于装载/卸载位置。
图3为根据本发明一实施例，双负载闸室的第二腔室容积的俯视图。
图4为根据本发明一实施例，双负载闸室的第一腔室容积的俯视图。
图5为根据本发明一实施例，双负载闸室的第一腔室主体的透视图。
图6为第一腔室主体与第二腔室主体组装在一起的透视截面图。
图7为形成于第二腔室主体与第一腔室主体的泵抽通道的透视截面图，其中移除了加热基板支撑组件。
图8为根据本发明另一实施例，双负载闸室的截面图。
图9为根据本发明实施例，包括双负载闸室的基板处理系统的平面图。
图10为根据本发明一实施例，处理基板的方法流程图。
图11为根据本发明另一实施例，处理基板的方法流程图。
为助于了解，尽可能以相同的元件符号代表各图中共同的相似元件。应理解某一实施例所述的元件当可有益地并入其他实施例，在此不另外详述。
具体实施方式
本发明的实施例提供制造装置于半导体基板上的设备和方法。更具体而言，本发明的实施例关于包括两个隔离腔室容积的双负载闸室，其中至少一腔室容积经配置以处理基板，例如使基板接触活性反应组分。
本发明的一实施例提供负载闸室，负载闸室具有至少两个隔离腔室容积形成于主体组件内。这两个隔离腔室容积可垂直堆迭或并排设置。两个腔室容积可独立操作以提高产量。在一实施例中，第一腔室容积经配置以使放在里面的基板接触活性反应组分，以例如从基板移除卤素残留物或光刻胶。第二腔室容积仅用于在毗连环境间交换，例如工厂界面与移送室的环境。本发明的一实施例提供负载闸室，负载闸室包括用以加热内部基板的薄加热基板支撑件和设在薄加热基板支撑件上方的喷洒头，用以均匀供应一或更多处理气体给负载闸室。在一实施例中，喷洒头连接至远端等离子体源，以供应活性反应组分给负载闸室。本发明的负载闸室还可包括箍衬套，以在用于处理基板的腔室容积内建立对称处理环境。在本发明一实施例中，箍衬套可耦接至一或更多升降指状件，该升降指状件经配置以利用设在负载闸室外的基板传送机器人来交换基板。
图1为根据本发明一实施例，双负载闸室100的截面图。双负载闸室100包括用于传送基板104的第一腔室容积110和用于传送及处理基板104的第二腔室容积120。第二腔室容积120和第一腔室容积110垂直堆迭在一起且互相隔离。
双负载闸室100包括腔室主体组件103。在一实施例中，腔室主体组件103包括第一腔室主体111和第二腔室主体121，腔室主体111、121耦接在一起而界定一元结构容纳第一与第二腔室容积120、110。在一实施例中，第一腔室主体111和第二腔室主体121垂直堆迭在一起。虽然第一腔室主体111被绘示为堆迭在第二腔室主体121下方，但当理解第一腔室主体111也可堆迭在第二腔室主体121上方或水平并排设置。
双负载闸室100的第二腔室容积120具有喷洒头129、加热基板支撑组件132和升降箍组件144。喷洒头129设在加热基板支撑组件132上方。升降箍组件144经配置以限制第二腔室容积120内的处理环境，升降箍组件144还能够操作用于装载及卸载来自加热基板支撑组件132和基板传送机器人(未图示)的基板。
第二腔室容积120由第二腔室主体121的多个侧壁122、置于所述多个侧壁122上方的盖衬套127、第二腔室主体121的底壁123和第一腔室主体111的顶壁118界定。盖衬套127具有形成中央开口127c的内唇127a。内唇127a支承喷洒头129和源接装板128。在一实施例中，盖衬套127可拆式设在第二腔室主体121上方，以容许接近腔室部件。
喷洒头129包括具多个穿孔129a面板129d(该多个穿孔129a被形成为贯穿该面板129d)和具中央开口129e的背板129c。面板129d和背板129c围住内部容积129b。内部容积129b当作气室来加强经由贯穿面板129d所形成的穿孔129a提供至第二腔室容积120的气体的径向均匀度。
源接装板128设在喷洒头129的背板129c上方。源接装板128具有中央开口128a，中央开口128a匹配喷洒头129的中央开口129e。远端等离子体源130经由设于开口129e、128a中的石英嵌入件131流体连通于喷洒头129的内部容积129b。出自远端等离子体源130的解离活性反应组分经由石英嵌入件131进入第二腔室容积120而至喷洒头129的内部容积129b，接着经由喷洒头129的穿孔129a而至第二腔室容积120。
在一实施例中，喷洒头129由石英制成，从而内部容积129b接触气室内活性反应组分的表面以石英为衬里。石英嵌入件131和喷洒头129保护金属腔室部件免于接触远端等离子体源130提供的活性反应组分，从而实质减少物种复合、侵害金属腔室部件及产生微粒。
远端等离子体源130通常连接至一或更多气体分配盘，气体分配盘经由远端等离子体源130供应一或更多处理气体给上腔室容积110。在一实施例中，远端等离子体源130连接至第一气体分配盘101和第二气体分配盘102，第一气体分配盘101经配置以提供用于消除工艺的处理气体来移除蚀刻后残留的材料，第二气体分配盘102经配置以提供用于灰化工艺的处理气体来移除光刻胶。
加热基板支撑组件132经配置以适配在双负载闸室100的第二腔室容积120中。加热基板支撑组件132安装成与腔室主体组件103实质隔热。在一实施例中，加热基板支撑组件132经配置以加热基板104达300℃，同时腔室主体组件103则保持冷却。
在一实施例中，加热基板支撑组件132包括上加热板133、附接上加热板133的下加热板134和设在上加热板133与下加热板134间的加热器135。在一实施例中，加热器135可设在形成于下加热板134的上表面的通道中。加热器135可为电阻式加热器或配置为供热传流体流动的导管。上加热板133和下加热板134可藉由螺栓、焊接或铜焊而接合在一起。在一实施例中，上加热板133和下加热板134可由金属组成，例如铝。
上加热板133经配置以支撑基板104的背侧104b。在一实施例中，下加热板134的外径大于上加热板133的外径。聚焦环151可设在下加热板134径向露出上加热板133外面的外缘134a上。聚焦环151围绕上加热板133和放在加热板133上的基板104。聚焦环151用来保留基板104及于处理时修改基板104的边缘区域周围的处理速率。在一实施例中，聚焦环151、上和下加热板133、134可具有匹配切口155，切口155经配置以提供升降指状件147通行。
加热基板支撑组件132经由第二腔室主体121的底壁123中的中央开口123a装设在绝热器143上，绝热器143设在第一腔室主体111的顶壁118。在一实施例中，凹部118a可形成在第一腔室主体111的顶壁118。凹部118a可容许形成于第一腔室主体111中的真空进出口连接第二腔室容积120。加热基板支撑组件132不直接接触腔室主体组件103。绝热器143可由绝热材料组成，例如陶瓷，以防加热基板支撑组件132与包括第二腔室主体121和第一腔室主体111的腔室主体组件103间发生热交换。
绝热器143经设置以相对第二腔室容积120中的其他部件(例如喷洒头129和升降箍组件144)置中加热基板支撑组件132。在一实施例中，绝热器143对准加热基板支撑组件132的中心轴132a，以确保加热基板支撑组件132于热膨胀时维持置中。
悬臂管136从靠近下加热板134中心的背侧134b延伸。悬臂管136放射状向外延伸而连接垂直管137，垂直管137设置为穿过第二腔室主体121的开口153和第一腔室主体111的开口152。管136、137不接触第二腔室主体121或第一腔室主体111，以进一步避免加热基板支撑组件132与腔室主体111、121间发生热交换。悬臂管136和垂直管137提供通道给电源、感测器和加热基板支撑组件132所用其他配线。在一实施例中，加热器功率源138、感测信号接收器139和夹持控制单元140经由悬臂管136和垂直管137的通道而接线至加热基板支撑组件132。在一实施例中，夹持控制单元140经配置以提供真空夹持机制。
冷却配接器141从第一腔室主体111外侧耦接至垂直管137和第一腔室主体111。冷却配接器141具有冷却通道141a形成于内。冷却流体142的来源连接至冷却通道141a，用以冷却冷却配接器141与垂直管137、悬臂管136和加热基板支撑组件133的其他部件。处理期间，冷却配接器141通常保持冷却，故可做为加热基板支撑组件132与腔室主体组件103间的绝热器。
在一实施例中，双金属连接器可用于连接加热基板支撑组件132的各种零件，以提供均匀温度控制。
加热基板支撑组件132的详细说明可参见2011年3月1日提交、名称为“薄加热基板支撑件(ThinHeaterSubstrateSupport)”的美国临时专利申请案第61/448,018号(文件编号15750)。
双负载闸室100还包括升降箍组件144，用以在外来机器人与加热基板支撑组件132间传送基板，及用于在第二腔室容积120中提供对称处理环境。升降箍组件144包括环状箍主体146，箍主体146设在第二腔室容积120内围绕加热基板支撑组件132。箍主体146耦接至升降机160，升降机160设在第二腔室容积120的外部区域。升降机160在第二腔室容积120内垂直移动箍主体146。在一实施例中，升降机160包括波纹管161，以进行垂直移动。升降机160可耦接至设在腔室主体组件103外侧的马达致动器169。
三个或更多升降指状件147附接至箍主体146。升降指状件147垂直向下延伸且从箍主体146放射状向内延伸。升降指状件147经配置以在加热基板支撑组件132与第二腔室容积120外侧的基板传送装置(例如机器人)间传送基板。升降指状件147的尖端147a构成基板支撑表面，尖端147a经配置以在靠近基板104边缘区域的数个点处支撑基板104。
图1图示升降箍组件144处于较高位置，以与外来基板传送装置交换基板。图2为双负载闸室100的截面图，升降箍组件144处于较低位置，以进行基板处理。
当箍主体146处于图2所示较低位置时，升降指状件147位于上加热板133的上表面133a下方。随着箍主体146上升到较高位置，升降指状件147移动而接触基板104，并将基板104从加热基板支撑组件132抬起。当箍主体146处于图1所图示较高位置时，外部基板传送装置(未图示)可经由进出口之一进入第二腔室容积120，以自升降指状件147移开基板104，然后把新基板104放到升降指状件147上。当箍主体146再次下降到较低位置时，位于升降指状件147上的新基板104将被放到加热基板支撑组件132上进行处理。
箍衬套145附接至箍主体146。箍衬套145从箍主体146垂直向上延伸。在一实施例中，箍衬套145为具实质平坦的圆柱形内壁145a的环。在一实施例中，箍衬套145的内壁145a的高度145b远大于加热基板支撑组件132的厚度，内径则大于加热基板支撑组件132和喷洒头129的外径，使得箍衬套145可在加热基板支撑组件132和喷洒头129周围建立处理环境。当箍主体146处于较高位置时，如图1所图示，箍衬套145可进入形成于盖衬套127内的腔体127b。当箍主体146处于较低位置时，箍衬套145的圆柱形内壁145a在第二腔室容积120内围绕基板104和加热基板支撑组件132正上方的区域建立圆形界限壁，因而提供基板104对称处理环境。在一实施例中，箍衬套145的高度145b足够大，足以覆盖喷洒头129的面板129d与加热基板支撑组件132间的垂直空间。在一实施例中，箍衬套145由石英组成。
升降箍组件144的详细说明可参见2011年3月1日提交、名称为“基板传送及根部局限的方法和设备(MethodandApparatusforSubstrateTransferandRadicalConfinement)”的美国临时专利申请案第61/448,012号(文件编号15745)。
第一腔室容积110由第一腔室主体111和附接第一腔室主体111的腔室底部112界定。第一腔室主体111具有顶壁118和多个侧壁119。顶壁118、多个侧壁119和腔室底部112围住第一腔室容积110。经配置以支撑基板104及与基板传送装置(例如基板传送机器人)交换基板的基板支撑机制可设在第一腔室容积110内。在一实施例中，基板支撑机制包括三个或更多支撑销113，用以从基板背侧104b支撑基板104。在一实施例中，支撑销113可从第一腔室主体111或腔室底部112固定延伸。支撑销113定位为与基板传送装置互动。
第二腔室容积120和第一腔室容积110耦接至真空系统150。在一实施例中，相互独立地控制第二腔室容积120和第一腔室容积110内的压力。
图3为第二腔室主体121的俯视图，其中移除了喷洒头129。第二腔室主体121包括多个侧壁122和底壁123。底壁123被形成为匹配第一腔室主体111的顶壁118，从而构成封闭的腔室容积供真空与公用设施通行(此将详述于后)。形成穿过所述多个侧壁122的两个开口325，以容许基板传送。流量阀门可附接各开口325外侧，藉以提供第二腔室容积120与两个处理环境间的界面。
图4为双负载闸室100的第一腔室容积110的俯视图。形成穿过第一腔室主体111的所述多个侧壁119的两个开口416，以容许在两个处理环境(例如真空移送室和大气工厂界面)间传送基板(均未图示)。流量阀门可附接各开口416外侧，以选择性将第一腔室容积110密封于两个处理环境，例如真空移送室和大气工厂界面。第一腔室主体111可具通往第一腔室容积110的下真空进出口415，用以泵抽第一腔室容积110。
在一实施例中，还形成形成穿过第一腔室主体111的上真空进出口454，用以泵抽第二腔室容积120。
图5为根据本发明一实施例，第一腔室主体111的透视图。凹部118a形成于第一腔室主体111的顶壁118。凹部118a容许加热基板支撑组件132座落在第二腔室容积120内的低处，从而缩减第二腔室容积120。中心凹口543可形成在凹部118a内，用以固定绝热器143(图示于图1)用于支撑加热基板支撑组件132。上真空进出口454形成为穿过第一腔室主体111的所述多个侧壁119，并通往形成于第一腔室主体111的顶壁118的凹部118a。故凹部118a还容许在第一腔室主体111内形成通向第二腔室容积120的泵抽通道。或者，真空进出口454可形成在凹部118a外侧，以匹配形成于第二腔室主体121的底壁123的进出口。
在一实施例中，至少一压盖511a形成于凹部118a周围。密封件可设在各压盖511a中，以于第二腔室主体121与第一腔室主体111间形成真空密封。在一实施例中，两个压盖511a可形成于第一腔室主体111的顶壁118，以提供更强的真空密封。
图6为第二腔室主体121与第一腔室主体111组装在一起的透视截面图。形成于第二腔室主体121的底壁123的中央开口123a将第二腔室容积120的内部空间和位于第一腔室主体111的顶壁118上的凹部118a相连接。因此，当第二腔室主体121附接至第一腔室主体111时，上真空进出口454可流体连通第二腔室容积120。
图7为第二腔室主体121与第一腔室主体111的透视截面图，其中移除了加热基板支撑组件132。图7中图示了下真空进出口415。第二腔室主体121和第一腔室主体111可利用各种方法接合在一起而得真空密封件。在一实施例中，第二腔室主体121用螺栓固定于第一腔室主体111。在另一实施例中，第一腔室主体111和第二腔室主体121可被铜焊在一起，以降低泄漏风险并消除容差问题。
图8为根据本发明另一实施例，双负载闸室800的截面图。双负载闸室800类似双负载闸室100，区别在于双负载闸室800的灯具组件810用来代替双负载闸室100的远端等离子体源130。石英窗口811设在盖衬套127上方。灯具组件810设在石英窗口811外侧。出自灯具组件810的辐射能经由石英窗口811导向第二腔室容积120。气源812流体连通于第二腔室容积120，以提供处理气体及/或净化用惰性气体。
图9为根据本发明实施例，基板处理系统900的平面图，基板处理系统900包括一个或更多双负载闸室100。双负载闸室800也可用来代替双负载闸室100。
系统900包括真空密闭处理平台904、工厂界面902和系统控制器944。平台904包括多个处理腔室918和至少一个双负载闸室100，处理腔室918和双负载闸室100耦接至真空基板移送室936。在一实施例中，移送室936具有四个侧边920。每一侧边920经配置以连接一对处理腔室918或负载闸室100。如图9所示，六个处理腔室918耦接至移送室936的三个侧边920，两个双负载闸室100则耦接至移送室936的第四个侧边920。工厂界面902经由双负载闸室100耦接至移送室936。
在一实施例中，工厂界面902包含至少一坞站908和至少一工厂界面机器人914，以协助基板传送。坞站908经配置以接受一个或更多前开式晶圆传送盒(FOUP)。图9实施例图示四个FOUP906。工厂界面机器人914具有设在机器人914一端的叶片916，工厂界面机器人914经配置以将基板从工厂界面902经由双负载闸室100传送到处理平台904进行处理。
每一个双负载闸室100具有耦接至工厂界面902的两个进出口和耦接至移送室936的两个进出口。双负载闸室100耦接至压力控制系统(未图示)，压力控制系统对双负载闸室100泵抽及通气，以助于在移送室936的真空环境与工厂界面902的实质周围(例如大气)环境间传递基板。
移送室936内设真空机器人937，用以在双负载闸室100与处理腔室918间传送基板924。在一实施例中，真空机器人937具有两个叶片940，每个叶片940能在双负载闸室100与处理腔室918间传送基板924。在一实施例中，真空机器人937经配置以同时传送两个基板924至两个处理腔室918或两个负载闸100。
在一实施例中，至少一处理腔室918是蚀刻室。例如，蚀刻室可为能自应用材料公司购得的去耦等离子体源(DPS)腔室。DPS蚀刻室采用感应源来产生高密度等离子体，且包含射频(RF)功率源来偏压基板。或者，至少一处理腔室918可为HARTTM、DPSII、PRODUCERE或蚀刻室的其中之一，这些蚀刻室也可自应用材料公司购得。也可使用其他蚀刻室，包括来自其他制造商的蚀刻室。蚀刻室可利用含卤素气体来蚀刻内置基板924。含卤素气体的示例包括溴化氢(HBr)、氯气(Cl2)、四氟化碳(CF4)等。蚀刻基板924后，含卤素残留物可能会留在基板表面。
可在双负载闸室100中，利用热处理工艺，移除含卤素残留物。例如，可在一或两个双负载闸室100的第二腔室容积120中进行热处理工艺。或者，可在一或两个双负载闸室100的第二腔室容积120中进行灰化工艺。
系统控制器944耦接至处理系统900。系统控制器944藉由直接控制系统900的处理腔室918或藉由控制处理腔室918与系统900相关的计算机(或控制器)来控制系统900的操作。操作时，系统控制器944能实现数据采集，且能实现自各腔室与系统控制器944的反馈，从而最佳化系统900的效能。
系统控制器944通常包括中央处理单元(CPU)938、存储器939和支援电路942。CPU938可为任一型式的、可以工业设定使用的通用计算机处理器。支援电路942通常耦接至CPU938，且包含高速缓存、时钟电路、输入/输出子系统、电源等。软件例程例如为以下图10所述移除含卤素残留物的方法1000及/或图11所述灰化方法1100，由CPU938执行时，软件例程将CPU938转换成特定用途的计算机(控制器)944。软件例程也可由第二控制器(未图示)储存及/或执行，第二控制器设在系统900远端。
图10为根据本发明一实施例，处理基板的方法1000的流程图。具体而言，方法1000经配置以自基板移除含卤素残留物。方法1000可在图9所图示的处理系统900中进行。应理解方法1000可在其他适合处理系统(包括来自其他制造商的处理系统在内)中进行。
方法1000始于方块1010：将上面设有膜层的基板从FOUP906之一传送到双负载闸室100，及把含有基板的腔室容积泵抽成等于移送室936的真空等级。在一实施例中，传送到双负载闸室100的基板可从工厂界面902只传送到双负载闸室100的第一腔室容积110。依此，有效减少了已处理与未处理基板间交叉污染。
在另一实施例中，利用双负载闸室100的第二腔室容积120中的加热基板支撑组件132，可预热传送到双负载闸室100的基板达预定温度。在一实施例中，可预热基板达约20℃至约400℃。
在方块1020中，双负载闸室100和移送室936内的压力为实质相等后，真空机器人937将基板从双负载闸室100传送到处理腔室918之一。
在方块1030中，在处理腔室918中蚀刻基板，以于基板上形成预定特征结构和图案。
在一实施例中，藉由供应具至少一种含卤素气体的气体混合物，以在处理腔室918中蚀刻基板。图案化掩模可包括光刻胶掩模及/或硬掩模。适合的含卤素气体示例包括溴化氢(HBr)、氯气(Cl2)、四氟化碳(CF4)等，但不以此为限。在适于蚀刻多晶硅的示例性实施例中，供应给处理腔室918的气体混合物提供包括溴化氢(HBr)与氯气(Cl2)的气体混合物，供应流率为约20sccm至约300sccm，例如约20sccm至约60sccm，例如约40sccm。溴化氢(HBr)与氯气(Cl2)的气体比可为约1：0至约1：30，例如约1：15。可伴随气体混合物供应惰性气体给处理腔室918。适合的惰性气体示例包括氮气(N2)、氩气(Ar)、氦气(He)等。在一实施例中，可伴随气体混合物供应惰性气体，例如N2，供应流率为约0sccm至约200sccm，例如约0sccm至约40sccm，例如约20sccm。可伴随气体混合物供应还原气体，例如一氧化碳(CO)。用于蚀刻工艺的等离子体功率可维持在约200瓦至约3000瓦，例如约500瓦至约1500瓦，例如约1000瓦，偏压功率可维持在约0瓦至约300瓦，例如约0瓦至约80瓦，例如约20瓦。工艺压力可控制为约2毫托耳(mTorr)至约100毫托耳，例如约2毫托耳至约20毫托耳，例如约4毫托耳，基板温度可维持呈约0℃至约200℃，例如约0℃至约100℃，例如约45℃。
在蚀刻工艺期间，已蚀刻材料可能与蚀刻化学剂的组分结合，以及与掩模层的组分(若有)和蚀刻工艺的副产物结合，而形成含卤素残留物。在一实施例中，基板上的待蚀刻材料包括光刻胶层、硬掩模层、底部抗反射涂层(BARC)、多晶硅、结晶硅、栅极氧化物、金属栅极(例如氮化钛(TiN))和高介电系数(k)材料(例如氧化铝(Al2O3)、含铪氧化物)。适合的硬掩模层示例包括氮化硅、四乙氧基硅烷(TEOS)、氧化硅、无定形碳和碳化硅。含卤素残留物沉积于基板表面。若接触大气压及/或水蒸汽，含卤素残留物会释出(例如除气)气态反应物，例如溴(Br2)、氯气(Cl2)、氯化氢(HCl)、溴化氢(HBr)等。传送基板时，释出此类反应物将对处理设备和工厂界面(例如图9所图示真空密闭处理平台904和工厂界面902)造成腐蚀和微粒污染。在诸如铜(Cu)、铝(Al)、钨(W)等金属层接触基板表面的实施例中，若未通过本发明工艺来移除气态反应物，则金属层会遭释出的气态反应物腐蚀，以致不利地劣化形成于基板上的装置效能。
卤素也可能出现于在真空环境中经除蚀刻外的方式处理的基板表面。故应理解利用本文所述方法和设备当可自这些基板移除卤素。
在方块1040中，将已处理(例如已蚀刻)基板传送到双负载闸室100的第二腔室容积120，以在工厂界面或其他位置接触大气条件或水蒸汽前，移除基板上于方块1030的处理期间产生的含卤素残留物。蚀刻处理后，移送室936中的真空机器人937将已蚀刻基板从处理腔室918传送到双负载闸室100的第二腔室容积120中的升降指状件147。升降指状件147将已蚀刻基板降下并传送到加热基板支撑组件132。
在方块1050中，在已蚀刻基板上进行热处理工艺，以移除已蚀刻基板表面的含卤素残留物。加热基板支撑组件132中的加热器135用于促进基板表面温度上升，进而造成置于已蚀刻基板表面的卤素基反应物释出及/或除气。加热基板支撑组件132在约5秒至约30秒内加热基板达约20℃至约1000℃，例如约150℃至约300℃，例如约250℃。由加热基板支撑组件132快速加热基板能移除已蚀刻基板上的含卤素残留物，又不会增加工艺循环时间(若于处理腔室的其中之一内移除残留物，则可能遇到此问题)。在一实施例中，可由加热基板支撑组件132加热基板达一段预定时间，直到从已蚀刻基板表面移除含卤素残留物为止。利用连接至感测信号接收器139的感测器，决定时间或终点。已蚀刻基板可经加热达约150℃至约300℃，例如约250℃，时长达约10秒至约120秒，例如约30秒至约90秒。
在一实施例中，气体混合物可经由远端等离子体源130提供至双负载闸室100的第二腔室容积120。远端等离子体源130离子化气体混合物。解离的离子和物种促使除气的卤素基反应物转化成非腐蚀性挥发化合物，进而提高从已蚀刻基板表面移除含卤素残留物的效率。气体混合物可包括含氧气体(例如氧气(O2)、臭氧(O3)、水蒸汽(H2O))、含氢气体(例如氢气(H2)、成形气体、水蒸汽(H2O)、烷、烯等)或惰性气体(例如氮气(N2)、氩气(Ar)、氦气(He)等)。例如，气体混合物可包括氧气、氮气和含氢气体。在一实施例中，含氢气体是氢气(H2)与水蒸汽(H2O)的至少一者。在基板上有掩模层的实施例中，可同时移除掩模层和含卤素残留物，例如在负载闸室中剥除掩模的光刻胶。
在一实施例中，远端等离子体源可提供约500瓦至6000瓦的等离子体功率。在存有等离子体的实施例中，可伴随气体混合物供应惰性气体，例如Ar、He或N2。
或者，以双负载闸室800代替双负载闸室100时，可由气源812供应气体混合物给第二腔室容积120，同时加热已蚀刻基板。已蚀刻基板接触气体混合物且与气体混合物反应。气体混合物将除气的卤素基反应物转化成非腐蚀性挥发化合物，挥发化合物经泵抽离开双负载闸室100。
任选地，基板可返回系统的处理腔室918之一，以于移出真空环境前，进行附加处理。在方块1050的卤素移除工艺后，后续处理期间，基板不会把卤素带进处理腔室，故可避免破坏处理腔室。
在方块1060中，对第二腔室容积120通气成大气压。任选地，通气时，可利用冷却配接器141，冷却加热基板支撑组件132，使基板温度下降预定程度。在一实施例中，已蚀刻基板经可冷却至约10℃至约125℃，如此已蚀刻基板返回FOUP906时将不会破坏FOUP906。
在方块1070中，一旦第二腔室容积120与工厂界面902的压力相称，已蚀刻基板即从负载闸室100的第二腔室容积120返回FOUP906之一。
在本发明另一实施例中，可在根据本发明实施例的双负载闸室中进行光刻胶移除工艺。图11为方法1100的流程图，方法1100包括当基板离开基板处理系统(例如图9的基板处理系统900)时，在负载闸室中移除基板的光刻胶。
方法1100类似图10的方法1000，除了方法1100包括方块1150所述灰化工艺。
在方块1150中，在双负载闸室100的第二腔室容积120中进行灰化工艺，以从基板移除光刻胶。可使用氧基等离子体。例如，氧化气体(例如O2)按100sccm至10000sccm的流率流入远端等离子体源130。当600瓦至6000瓦的RF能量施加至远端等离子体源130时，氧化气体将形成等离子体。第二腔室容积120内的气体压力可维持在0.3托耳至3托耳。基板温度可维持呈15℃至300℃。可使用各种氧化气体，包括O2、O3、N2O、H2O、CO、CO2、醇类和所述气体的各种组合物，但不以此为限。在本发明的其他实施例中，可使用非氧化气体，包括N2、H2O、H2、合成气体、NH3、CH4、C2H6、各种卤化气体(CF4、NF3、C2F6、C4F8、CH3F、CH2F2、CHF3)、所述气体的组合物等，但不以此为限。
藉由使用送进基板专用的第一腔室容积110及使用送出基板专用的第二腔室容积120，方法1000或1100可结合双负载闸室100。通过使送进和送出基板保持在不同分离路径，本发明实施例可有效防止已处理与未处理基板间交叉污染。
虽然以上是针对本发明实施例说明，但在不脱离本发明基本范围的情况下，当可构思出本发明的其他和进一步实施例，因此本发明范围以后附权利要求来确定。

Claims (14)

1.一种负载闸室，包含：
腔室主体，所述腔室主体界定互相隔离的第一腔室容积和第二腔室容积，其中所述第一腔室容积经由配置以传送基板的两个开口能选择性连接至两个处理环境，所述第二腔室容积选择性连接至所述两个处理环境的至少一者；
加热基板支撑组件，所述加热基板支撑组件设在所述第二腔室容积内，其中所述加热基板支撑组件经配置以支撑及加热放置于所述加热基板支撑组件上的基板；以及
远端等离子体源，所述远端等离子体源连接至所述第二腔室容积，用以供应等离子体给所述第二腔室容积以离子化包括含氧气体、含氢气体或惰性气体的气体混合物，
其中，所述腔室主体包括：
第一腔室主体，所述第一腔室主体具有顶壁、多个侧壁和腔室底部，其中所述顶壁、所述侧壁和所述腔室底部界定所述第一腔室容积；以及
第二腔室主体，所述第二腔室主体堆迭在所述第一腔室主体的所述顶壁上，其中所述第二腔室主体和所述第一腔室主体的所述顶壁界定所述第二腔室容积。
2.如权利要求1所述的负载闸室，进一步包含绝热器，所述绝热器设在所述加热基板支撑组件与所述腔室主体间的所述第二腔室容积内，其中所述加热基板支撑组件不直接接触所述腔室主体。
3.如权利要求1所述的负载闸室，其中所述加热基板支撑组件包含：
上加热板，所述上加热板具有上表面，所述上表面支撑放置于所述上表面上的基板；
下加热板，所述下加热板附接至所述上加热板的下表面；以及
加热器，所述加热器设在所述上加热板与所述下加热板之间。
4.如权利要求3所述的负载闸室，其中所述加热基板支撑组件进一步包含悬臂管，所述悬臂管附接至所述下加热板的中心。
5.如权利要求3所述的负载闸室，其中所述加热基板支撑组件进一步包含夹持机制，所述夹持机制经配置以将所述基板夹持在所述上加热板的所述上表面。
6.如权利要求1所述的负载闸室，进一步包含喷洒头，所述喷洒头设在由所述第二腔室主体界定的中央开口内，且所述喷洒头经配置以提供处理气体给所述第二腔室容积。
7.如权利要求1所述的负载闸室，进一步包含灯具组件，所述灯具组件设在所述第二腔室主体上方且经配置以朝所述第二腔室容积提供辐射能。
8.如权利要求1所述的负载闸室，其中穿过所述第一腔室主体的所述腔室底部形成有下真空进出口，且所述下真空进出口提供泵抽通道至所述第一腔室容积。
9.如权利要求8所述的负载闸室，其中穿过所述第一腔室主体的所述多个侧壁形成有上真空进出口，所述上真空进出口通往所述第二腔室容积。
10.如权利要求1所述的负载闸室，进一步包含升降箍组件，所述升降箍组件设在所述第二腔室容积内，其中所述升降箍组件包含箍主体，所述箍主体附接至升降机，且所述箍主体围绕所述加热基板支撑组件。
11.一种负载闸室，包括：
腔室主体，所述腔室主体界定互相隔离的第一腔室容积和第二腔室容积，其中所述第一腔室容积经由配置以传送基板的两个开口能选择性连接至两个处理环境，所述第二腔室容积选择性连接至所述两个处理环境的至少一者；
加热基板支撑组件，所述加热基板支撑组件设在所述第二腔室容积内，其中所述加热基板支撑组件经配置以支撑及加热放置于所述加热基板支撑组件上的基板；
远端等离子体源，所述远端等离子体源连接至所述第二腔室容积，用以供应等离子体给所述第二腔室容积以离子化包括含氧气体、含氢气体或惰性气体的气体混合物；以及
设在所述第二腔室容积中的升降箍组件，其中所述升降箍组件包含箍主体，所述箍主体附接至升降机，且所述箍主体围绕所述加热基板支撑组件，其中所述升降箍组件进一步包含三个或更多个升降指状件，所述三个或更多个升降指状件垂直向下延伸且从所述箍主体放射状向内，且所述三个或更多个升降指状件经配置以接收及支撑一基板。
12.如权利要求10所述的负载闸室，其中所述升降箍组件进一步包含附接至所述箍主体的箍衬套，所述箍衬套从所述箍主体向上延伸，且所述箍衬套提供圆形界限壁围绕所述加热基板支撑组件。
13.如权利要求12所述的负载闸室，其中所述第二腔室容积经由经配置以传送基板的多个开口选择性连接至所述两个处理环境。
14.一种从基板移除含卤素残留物的方法，所述方法包含以下步骤：
经由如权利要求1-13中任一项的负载闸室的第一腔室容积，将基板传送到基板处理系统，其中所述负载闸室耦接至所述基板处理系统；
在所述基板处理腔室中，以包含卤素的化学剂蚀刻所述基板；以及
在所述负载闸室的所述第二腔室容积中，从所述已蚀刻基板移除含卤素残留物，其中移除所述含卤素残留物包含以下步骤：
加热设在所述第二腔室容积中的加热基板支撑组件上的所述已蚀刻基板；以及
使处理气体流入所述第二腔室容积。
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