DE60142320D1 - Verfahren zur Herstellung eines Dünnfilms - Google Patents

Verfahren zur Herstellung eines Dünnfilms

Info

Publication number
DE60142320D1
DE60142320D1 DE60142320T DE60142320T DE60142320D1 DE 60142320 D1 DE60142320 D1 DE 60142320D1 DE 60142320 T DE60142320 T DE 60142320T DE 60142320 T DE60142320 T DE 60142320T DE 60142320 D1 DE60142320 D1 DE 60142320D1
Authority
DE
Germany
Prior art keywords
producing
thin film
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142320T
Other languages
English (en)
Inventor
Kenji Ando
Minoru Otani
Yasuyuki Suzuki
Toshiaki Shingu
Ryuji Biro
Hidehiro Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60142320D1 publication Critical patent/DE60142320D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
DE60142320T 2000-03-13 2001-03-12 Verfahren zur Herstellung eines Dünnfilms Expired - Lifetime DE60142320D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000068513 2000-03-13
JP2000153245 2000-05-24

Publications (1)

Publication Number Publication Date
DE60142320D1 true DE60142320D1 (de) 2010-07-22

Family

ID=26587306

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142320T Expired - Lifetime DE60142320D1 (de) 2000-03-13 2001-03-12 Verfahren zur Herstellung eines Dünnfilms

Country Status (3)

Country Link
US (1) US6458253B2 (de)
EP (1) EP1134303B1 (de)
DE (1) DE60142320D1 (de)

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JP3833900B2 (ja) * 2001-03-28 2006-10-18 株式会社東芝 エッチング装置およびエッチング方法
EP1411375A4 (de) * 2001-07-18 2007-03-21 Nikon Corp Optisches element mit einem lanthanfluoridfilm
EP1434607A1 (de) * 2001-10-11 2004-07-07 Straumann Holding AG Osteophile implantate
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JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
JP2004100012A (ja) * 2002-09-12 2004-04-02 Univ Nagoya 化合物薄膜、及び化合物薄膜の作製方法
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
WO2004076705A2 (en) * 2003-02-24 2004-09-10 University Of South Florida Reactive physical vapor deposition with sequential reactive gas injection
KR100587368B1 (ko) * 2003-06-30 2006-06-08 엘지.필립스 엘시디 주식회사 Ｓｌｓ 결정화 장치
JP4269263B2 (ja) * 2003-07-01 2009-05-27 富士電機デバイステクノロジー株式会社 硬質カーボン膜の形成方法および装置
JP2005048260A (ja) * 2003-07-31 2005-02-24 Canon Inc 反応性スパッタリング方法
JP2005054220A (ja) * 2003-08-01 2005-03-03 Canon Inc フッ化物薄膜の形成方法及びその形成装置
US7235160B2 (en) * 2003-08-06 2007-06-26 Energy Photovoltaics, Inc. Hollow cathode sputtering apparatus and related method
US20050211544A1 (en) * 2004-03-29 2005-09-29 Seagate Technology Llc Electrical biasing of gas introduction means of plasma apparatus
US8016894B2 (en) 2005-12-22 2011-09-13 Apjet, Inc. Side-specific treatment of textiles using plasmas
US8845866B2 (en) * 2005-12-22 2014-09-30 General Electric Company Optoelectronic devices having electrode films and methods and system for manufacturing the same
US8173995B2 (en) 2005-12-23 2012-05-08 E. I. Du Pont De Nemours And Company Electronic device including an organic active layer and process for forming the electronic device
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP4578412B2 (ja) * 2006-01-20 2010-11-10 日本碍子株式会社 放電プラズマ発生方法
US7445976B2 (en) * 2006-05-26 2008-11-04 Freescale Semiconductor, Inc. Method of forming a semiconductor device having an interlayer and structure therefor
US7914692B2 (en) * 2006-08-29 2011-03-29 Ngk Insulators, Ltd. Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode
US7655571B2 (en) * 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US9157191B2 (en) * 2006-11-02 2015-10-13 Apjet, Inc. Treatment of fibrous materials using atmospheric pressure plasma polymerization
DE102006058078A1 (de) * 2006-12-07 2008-06-19 Systec System- Und Anlagentechnik Gmbh & Co. Kg Vakuumbeschichtungsanlage zur homogenen PVD-Beschichtung
US8168074B2 (en) * 2007-04-27 2012-05-01 The Regents Of The University Of California Modification of polymer surface with shielded plasma
JP5345955B2 (ja) * 2008-02-04 2013-11-20 Ｊｘ日鉱日石金属株式会社 無接着剤フレキシブルラミネート
US8361276B2 (en) * 2008-02-11 2013-01-29 Apjet, Inc. Large area, atmospheric pressure plasma for downstream processing
US20090242385A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Method of depositing metal-containing films by inductively coupled physical vapor deposition
WO2010116560A1 (ja) * 2009-03-30 2010-10-14 キヤノンアネルバ株式会社 半導体装置の製造方法及びスパッタ装置
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US8992689B2 (en) 2011-03-01 2015-03-31 Applied Materials, Inc. Method for removing halogen-containing residues from substrate
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
US8845816B2 (en) 2011-03-01 2014-09-30 Applied Materials, Inc. Method extending the service interval of a gas distribution plate
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
US20120255855A1 (en) * 2011-04-07 2012-10-11 Sage Electrochromics, Inc. Method of controlling lithium uniformity
US20120307353A1 (en) 2011-05-31 2012-12-06 Horst Schreiber DURABLE MgO-MgF2 COMPOSITE FILM FOR INFRARED ANTI-REFLECTION COATINGS
JP5932251B2 (ja) * 2011-06-17 2016-06-08 キヤノン株式会社 フッ化膜形成方法及び光学素子の製造方法
KR102013503B1 (ko) * 2011-09-28 2019-08-22 뷔흘러 알제나우 게엠베하 기판 위에 반사 감소층을 형성하기 위한 방법 및 장치
CN104137248B (zh) 2012-02-29 2017-03-22 应用材料公司 配置中的除污及剥除处理腔室
EP3254296B1 (de) 2015-02-03 2021-04-14 Cardinal CG Company Sputtervorrichtung mit einem gasverteilungssystem
US11131018B2 (en) * 2018-08-14 2021-09-28 Viavi Solutions Inc. Coating material sputtered in presence of argon-helium based coating

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Publication number Priority date Publication date Assignee Title
JPH04289165A (ja) 1991-03-18 1992-10-14 Toshiba Corp アルカリ土類金属弗化物膜の形成方法
JPH05182911A (ja) 1991-12-27 1993-07-23 Hitachi Ltd スパッタ装置
JPH0617248A (ja) 1992-06-11 1994-01-25 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center スパッタリング装置
DE4235953C2 (de) * 1992-10-23 1998-07-02 Fraunhofer Ges Forschung Sputterquelle mit einer linearen Hohlkathode zum reaktiven Beschichten von Substraten
JPH07166344A (ja) 1993-12-10 1995-06-27 Olympus Optical Co Ltd 金属フッ化物薄膜の成膜方法
JP3353514B2 (ja) 1994-12-09 2002-12-03 ソニー株式会社 プラズマ処理装置、プラズマ処理方法及び半導体装置の作製方法
JPH08220304A (ja) 1995-02-13 1996-08-30 Tadahiro Omi 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法
US5914017A (en) * 1996-05-22 1999-06-22 Sputtered Films, Inc. Apparatus for, and method of, removing hydrocarbons from the surface of a substrate
KR100278190B1 (ko) * 1997-02-19 2001-01-15 미다라이 후지오 박막형성장치및이를이용한박막형성방법
JP3782608B2 (ja) 1998-05-22 2006-06-07 キヤノン株式会社 薄膜材料および薄膜作成法

Also Published As

Publication number Publication date
US6458253B2 (en) 2002-10-01
EP1134303A1 (de) 2001-09-19
EP1134303B1 (de) 2010-06-09
US20010031543A1 (en) 2001-10-18

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