JP4578412B2 - 放電プラズマ発生方法 - Google Patents
放電プラズマ発生方法 Download PDFInfo
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- JP4578412B2 JP4578412B2 JP2006012264A JP2006012264A JP4578412B2 JP 4578412 B2 JP4578412 B2 JP 4578412B2 JP 2006012264 A JP2006012264 A JP 2006012264A JP 2006012264 A JP2006012264 A JP 2006012264A JP 4578412 B2 JP4578412 B2 JP 4578412B2
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- 238000001069 Raman spectroscopy Methods 0.000 description 2
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
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- 239000000919 ceramic Substances 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
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- 229920001477 hydrophilic polymer Polymers 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
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- 150000004706 metal oxides Chemical class 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
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- 239000003507 refrigerant Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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- 239000011593 sulfur Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
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- 238000004381 surface treatment Methods 0.000 description 2
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
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- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- JUSAXGUDYXSVEO-UHFFFAOYSA-N penta-1,3-diene;pent-1-ene Chemical compound CCCC=C.CC=CC=C JUSAXGUDYXSVEO-UHFFFAOYSA-N 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
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- LLLCSBYSPJHDJX-UHFFFAOYSA-M potassium;2-methylprop-2-enoate Chemical compound [K+].CC(=C)C([O-])=O LLLCSBYSPJHDJX-UHFFFAOYSA-M 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
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- SONHXMAHPHADTF-UHFFFAOYSA-M sodium;2-methylprop-2-enoate Chemical compound [Na+].CC(=C)C([O-])=O SONHXMAHPHADTF-UHFFFAOYSA-M 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
処理ガスの圧力が100Pa以下であり、パルス電圧のデューティー比が0.001%以上、1%以下であり、パルス電圧のパルス幅が3000nsec以下であり、パルス電圧の周期および電界強度の大きさがそれぞれ1kHz以上、10kHz以下および0.1〜50kV/cmであり、放電電極の単位面積あたりの投入電力1.0W/cm2以上において、放電プラズマの電子密度が1×1010cm−3以上であり、放電プラズマの電子温度が1.5eV以下であることを特徴とする。
デューティー比(%)=(パルスのオン時間の和/パルス周期)×100
「パルスのオン時間」とは、パルスの立ち上がり開始からパルスの立ち下り終了までの時間を指す。
「パルスのオン時間の和」とは、1周期に含まれるすべてのパルスのオン時間の合計値である。
例えば、周期1000μsecのオン時間1μsecの正パルスが印加されている場合は、デューティー比は、(1μsec/1000μsec)×100=0.1%である。
1周期内に正パルスと負パルスとが一つごと含まれている場合には、正パルスのオン時間と負パルスのオン時間との合計値を1周期で除する。例えば、周期1000μsecにオン時間1μsecの正パルスと2μsecの負パルスが印加されている場合は、デューティー比は、(1μsec+2μsec)/1000μsec)=0.3%である。
また、塩素含有化合物(Cl2、HCl、PCl3、BCl3など)を使用できる。
(炭素源を含む原料ガス)
メタノ−ル、エタノ−ル等のアルコ−ル
メタン、エタン、プロパン、ブタン、ペンタン、ヘキサン等のアルカン
エチレン、プロピレン、ブテン、ペンテン等のアルケン
ペンタジエン、ブタジエン等のアルカジエン
アセチレン、メチルアセチレン等のアルキン、
ベンゼン、トルエン、キシレン、インデン、ナフタレン、フェナントレン等の芳香族炭化水素
シクロプロパン、シクロヘキサン等のシクロアルカン
シクロペンテン、シクロヘキセン等のシクロアルケン
酸素ガス又は水素ガスのガス雰囲気中に占める濃度は、70vol%以下であることが好ましい。
希釈ガスとしては、アルゴンが挙げられる。希釈ガスの原料ガス雰囲気中に占める濃度は、20〜90vol%が好ましい。
図3に示すようなプラズマ生成装置を使用し、グロー放電を生じさせ、プラズマを発生させた。ステンレス製のチャンバー1は略円盤形状であり、チャンバーの高さは300mmであり、直径φは300mmである。チャンバー1にはビューウインド16、ラングミュアプローブ17およびステンレス製の電極5が固定されている。電極5とチャンバー1との間は絶縁体14によって絶縁されている。プローブの高さDは60mmとし、電極5の直径Eは100mmとする。電源としては、静電誘導サイリスタ素子を用いた電源を用いた。
図2を参照しつつ説明した装置を使用し、前述のようにしてダイヤモンド状炭素の薄膜を製造した。ステンレス製のチャンバー1は略円盤形状であり、チャンバーの高さは300mmであり、直径φは300mmである。電源としては、静電誘導サイリスタ素子を用いた電源を用いた。
Claims (2)
- アルゴンを含む処理ガスにインパルス型のパルス電圧を印加することによってグロー放電プラズマを発生させるプラズマ発生方法であって、
前記処理ガスの圧力が100Pa以下であり、前記パルス電圧のデューティー比が0.001%以上、1%以下であり、前記パルス電圧のパルス幅が3000nsec以下であり、前記パルス電圧の周期および電界強度の大きさがそれぞれ1kHz以上、10kHz以下および0.1〜50kV/cmであり、放電電極の単位面積あたりの投入電力1.0W/cm2以上において、前記放電プラズマの電子密度が1×1010cm−3以上であり、前記放電プラズマの電子温度が1.5eV以下であることを特徴とする、放電プラズマ発生方法。 - 前記放電プラズマを発生させた前記処理ガスをプラズマ源として利用し、前記処理ガスを基体に接触させることによって薄膜を形成することを特徴とする、請求項1記載の方法。
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