JP5349341B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP5349341B2 JP5349341B2 JP2009553522A JP2009553522A JP5349341B2 JP 5349341 B2 JP5349341 B2 JP 5349341B2 JP 2009553522 A JP2009553522 A JP 2009553522A JP 2009553522 A JP2009553522 A JP 2009553522A JP 5349341 B2 JP5349341 B2 JP 5349341B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
Description
また、基板支持台20は、プラズマ処理装置1から電気的にフローティング(floating)して、他の構成物に対して電気的に干渉されないように構成することが望ましい。また、アーム21を含む基板支持台20は、Al2O3のような絶縁物質で構成して、外部電撃(electric shock)による基板支持台20の損傷を防止する。
駆動手段49によって、上昇・下降運動可能である第2電極40を構成するとともに、真空密閉を維持するために、チャンバ1外部に露出される第2電極40が駆動手段49と連結される部分は、伸縮可能なベローズ形に構成することが望ましい。
駆動手段649によって、上昇・下降運動可能である第2電極640を構成するとともに、真空密閉を維持するために、チャンバ610外部に露出される第2電極640が駆動手段649と連結される部分は、伸縮可能なベローズ形に構成することが望ましい。
Claims (5)
- 開閉可能に形成されたチャンバと、
前記チャンバ内部に設けられ、第1ガスを噴射する第1電極部と、
前記第1電極部と離隔配置されて前記チャンバ内部に設けられ、電源が印加されて第2ガスを噴射して処理される基板との間にプラズマを生成する第2電極部と、
前記チャンバ外部に設けられた基板支持台と、
を含み、
前記基板支持台は、前記チャンバ内部に延長された少なくとも一つ以上のアーム又はピンを有し、前記アーム又はピンにより前記基板を支持するように構成され、かつ前記アームから前記基板の搭載位置方向に延設される支持部を含み、
前記支持部は、前記アームと連結して一部に開き空間が形成された支持リングと、
前記支持リングの前記開き空間に配置可能な補助リングと、
前記補助リングと連結され、前記アームとは別に駆動可能な補助アームと、を含む
ことを特徴とするプラズマ処理装置。 - 前記基板支持台は、前記チャンバ上部、又は下部から延長して上昇・下降可能なアームが前記基板を支持するか、或いは、前記チャンバ下部に設けられて上昇・下降可能な多数のピンが前記基板を支持するように形成されることを特徴とする請求項1記載のプラズマ処理装置。
- 前記第1電極、前記第2電極、及び前記基板支持台の中で少なくとも一つには、前記第1電極と前記基板支持台との間隔、又は前記第2電極と前記基板支持台との間隔を調節する駆動手段が、更に設けられることを特徴とする請求項1記載のプラズマ処理装置。
- プラズマ処理装置内の第1電極部と、第2電極部との間の基板支持台上に、パターン部が上方を向けるように基板を搭載させる段階;
前記搭載された基板と前記第1電極部との間の間隙を調整する段階;
前記第1電極部から前記第1電極部と対向する前記基板の第1面に非反応性ガスである第1ガスを噴射させて、前記第2電極部から前記第2電極部と対向する前記基板の第2面に反応性ガスである第2ガスを噴射させる段階;及び
前記第2電極部に電源を印加してプラズマを生成させて、前記基板の第2面をプラズマ処理する段階;
を含み、
前記基板支持台に前記基板を搭載する段階において、
前記プラズマ処理装置内部に延長されて前記基板を支持するアームから前記基板の搭載位置方向に延設される支持部の上に前記基板を搭載し、
前記支持部の上に基板を搭載するに際して、
前記アームと連結された支持リングの一部に形成された開き空間に前記基板を搬送して、前記支持リングの上部に基板を搭載する段階;
前記支持リングの開き空間に補助リングを上昇させて、前記支持リングと前記補助リングが閉空間を形成するようにする段階;
を含み、
前記補助リングを上昇させるに際して、前記補助リングと連結され、前記アームとは別に駆動可能な補助アームを用いて前記補助リングを上昇させる
ことを特徴とするプラズマ処理方法。 - プラズマ処理装置内に、相互離隔された第1電極部と、第2電極部との間に基板を提供し、前記第1電極部と前記基板の間の間隙が非放電領域になり、前記第2電極部と前記基板の間の間隔が放電領域になるように少なくとも一つ以上のガスを供給する段階;
を含むことを特徴とする請求項4記載のプラズマ処理方法。
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070025874A KR101357699B1 (ko) | 2007-03-16 | 2007-03-16 | 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법 |
KR10-2007-0025874 | 2007-03-16 | ||
KR1020070036577A KR101333521B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 장치 |
KR1020070036578A KR101362814B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 방법 |
KR10-2007-0036578 | 2007-04-13 | ||
KR10-2007-0036576 | 2007-04-13 | ||
KR1020070036576A KR20080092766A (ko) | 2007-04-13 | 2007-04-13 | 기판 지지대 및 이를 구비하는 플라즈마 처리 장치 |
KR1020070036579A KR101362815B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 방법 |
KR10-2007-0036577 | 2007-04-13 | ||
KR10-2007-0036579 | 2007-04-13 | ||
PCT/KR2008/001430 WO2008114958A1 (en) | 2007-03-16 | 2008-03-13 | Apparatus for plasma processing and method for plasma processing |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012156092A Division JP5543535B2 (ja) | 2007-03-16 | 2012-07-12 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010521808A JP2010521808A (ja) | 2010-06-24 |
JP5349341B2 true JP5349341B2 (ja) | 2013-11-20 |
Family
ID=39766039
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009553522A Expired - Fee Related JP5349341B2 (ja) | 2007-03-16 | 2008-03-13 | プラズマ処理装置及びプラズマ処理方法 |
JP2012156092A Expired - Fee Related JP5543535B2 (ja) | 2007-03-16 | 2012-07-12 | プラズマ処理装置及びプラズマ処理方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012156092A Expired - Fee Related JP5543535B2 (ja) | 2007-03-16 | 2012-07-12 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8888950B2 (ja) |
JP (2) | JP5349341B2 (ja) |
TW (1) | TWI597772B (ja) |
WO (1) | WO2008114958A1 (ja) |
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2008
- 2008-03-13 US US12/528,326 patent/US8888950B2/en active Active
- 2008-03-13 JP JP2009553522A patent/JP5349341B2/ja not_active Expired - Fee Related
- 2008-03-13 WO PCT/KR2008/001430 patent/WO2008114958A1/en active Application Filing
- 2008-03-14 TW TW097109241A patent/TWI597772B/zh not_active IP Right Cessation
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2012
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JP2012256895A (ja) | 2012-12-27 |
TW200908136A (en) | 2009-02-16 |
US8888950B2 (en) | 2014-11-18 |
JP2010521808A (ja) | 2010-06-24 |
TWI597772B (zh) | 2017-09-01 |
WO2008114958A1 (en) | 2008-09-25 |
US20100059478A1 (en) | 2010-03-11 |
JP5543535B2 (ja) | 2014-07-09 |
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