TWI656235B - 化學氣相沉積系統 - Google Patents

化學氣相沉積系統 Download PDF

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TWI656235B
TWI656235B TW106125500A TW106125500A TWI656235B TW I656235 B TWI656235 B TW I656235B TW 106125500 A TW106125500 A TW 106125500A TW 106125500 A TW106125500 A TW 106125500A TW I656235 B TWI656235 B TW I656235B
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wafer
vapor deposition
chemical vapor
deposition system
carrier
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TW106125500A
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TW201910551A (zh
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盧柏菁
黃冠寧
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漢民科技股份有限公司
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Priority to TW106125500A priority Critical patent/TWI656235B/zh
Priority to US16/040,364 priority patent/US20190032244A1/en
Priority to CN201810815730.5A priority patent/CN109306471A/zh
Priority to KR1020180086534A priority patent/KR20200068007A/ko
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Abstract

在一實施例，一種化學氣相沉積系統包含一承載盤、複數個晶圓承載器，以及一製程氣體。該承載盤繞著一中心軸旋轉。複數個晶圓承載器位於該承載盤，每個晶圓承載器承載一晶圓。該晶圓的周邊具有一倒角，每個晶圓承載器具有一延伸結構，該延伸結構具有一水平的底面以及一傾斜的承載面，該承載面用以承載該倒角。製程氣體靠近該晶圓的一磊晶面，經加熱反應形成一薄膜沉積在該磊晶面上。

Description

化學氣相沉積系統
本案是關於一種化學氣相沉積系統與其晶圓承載器。
金屬有機化學氣相沉積(Metal-Organic Chemical Vapor Deposition， MOCVD)，其原理是利用承載氣體(carrier gas)攜帶氣相反應物或是前驅物，進入裝有晶圓的反應室中，晶圓下方的承載盤(susceptor)具有加熱裝置，以加熱晶圓及接近晶圓的氣體使其溫度升高，而高溫會觸發單一或是數種氣體間的化學反應，使通常為氣態的反應物被轉換為固態的生成物，並沉積在晶圓表面上。
美國專利US7670434揭露一種氣相沉積裝置，圖1為剖面圖，顯示其所揭露的氣相沉積裝置1。如圖1所示，氣相沉積裝置1包含反應器10、用以承載晶圓13的晶圓承載器11、位於晶圓承載器11下方的承載盤12、位於承載盤12下方的加熱器14、一轉動機構15使承載盤12與晶圓承載器11旋轉、用以供應反應氣體的氣體輸入管線16，以及用以排出氣體的氣體排放管線17。
圖2A為圖1中晶圓承載器11的俯視圖，圖2B為圖2A在A—A方向的剖面圖。
圖1、圖2A和圖2B所揭露的是一種晶圓朝上(Face Up)的化學氣相沉積裝置1以及其晶圓承載器11。在本領域，另有一種晶圓朝下(Face Down)的化學氣相沉積裝置。美國專利US9617636揭露一種氣相沉積的晶圓與薄膜表面的溫度控制系統與方法。圖3為局部剖面示意圖，顯示該系統與方法中晶圓朝下(Face Down)的化學沈積系統2。
如圖3所示，氣相沉積系統2包含承載盤20及晶圓承載器21。一個承載盤20上可具有多個，例如五或六個晶圓承載器21。承載盤20及晶圓承載器21可分別進行公轉及自轉。圖3僅顯示氣相沉積系統2的一半，另一半對稱分布於中心軸22的另一側。一承載盤驅動系統23帶動承載盤20繞著中心軸22進行公轉。晶圓承載器21承載晶圓24。晶圓承載器21的正面或下方一定距離處，具有對向板25，而對向板25與晶圓承載器21之間，具有製程區域26。製程氣體27通過製程區域26，經加熱反應後，部分反應生成物沉積在晶圓24表面上形成薄膜，其餘則通過排氣區28排出。此外，晶圓承載器21的背面具有加熱器29，例如均熱板，用於加熱晶圓24。晶圓承載器21與加熱器29之間，可具有(空氣)間隙30。此外，溫度測量系統35包含正面測量系統31與反面測量系統32。正面測量系統31包含溫度測量器31a、31b、31c以測量晶圓24的正面溫度。反面測量系統32包含溫度測量器32a、32b、32c以測量加熱器29的反面溫度。
如圖3所示，在晶片朝下(Face Down)的化學沈積系統中，晶圓24的部分表面會被晶圓承載器21所覆蓋，無法被沉積薄膜，因此形成無效區域，導致產率的降低。
圖4和圖5為照片，顯示現有沉積系統的晶圓24被晶圓承載器24所覆蓋，而形成無效區域的情形。其中圖5為圖4的局部放大圖，如圖5所示，晶圓的無效區域的寬度可達到2000 μm。
鑒於上述缺陷，亟需設計一種應用於化學氣相沉積系統的晶圓承載器，使減少沉積製程的無效區域，以提高良率。
本案是關於一種氣相沉積系統與其晶圓承載器。
根據本發明一實施例，一種化學氣相沉積系統包含一承載盤、複數個晶圓承載器，以及一製程氣體。該承載盤繞著一中心軸旋轉。複數個晶圓承載器位於該承載盤，每個該晶圓承載器承載一晶圓，該晶圓的周邊具有一倒角，每個該晶圓承載器具有朝該晶圓方向延伸的一延伸結構，該延伸結構具有一水平的底面以及一傾斜的承載面，該承載面用以承載該倒角。該製程氣體靠近該晶圓的一磊晶面，經加熱反應形成一薄膜沉積在該磊晶面上。
在一實施例，該底面與該承載面具有一夾角，該夾角等於該倒角的角度。
在一實施例，該承載面是一個環形結構。
在一實施例，該承載面位於該晶圓承載器的內側壁的下方。
在一實施例，該化學氣相沉積系統是一種晶圓朝下的化學氣相沉積系統。
根據本發明另一實施例，一種化學氣相沉積系統包含一承載盤、複數個晶圓承載器，以及一製程氣體。該承載盤繞著一中心軸旋轉。複數個晶圓承載器位於該承載盤，每個該晶圓承載器承載一晶圓，該晶圓具有一磊晶面，每個該晶圓承載器具有複數個倒掛結構，該倒掛結構的端點具有一接觸以承載該磊晶面。該製程氣體靠近該晶圓的該磊晶面，經加熱反應形成一薄膜沉積在該磊晶面上。
在一實施例，其中該接觸具有一弧線的構造。
在一實施例，每個該晶圓承載器與所承載的晶圓的磊晶面之間為複數個線接觸。
在一實施例，其中該接觸具有一圓形的構造。
在一實施例，每個該晶圓承載器與所承載的晶圓的磊晶面之間為複數個點接觸。
在一實施例，該倒掛結構位於該晶圓承載器的下方。
在一實施例，該化學氣相沉積系統是一種晶圓朝下的化學氣相沉積系統。
以下將詳述本案的各實施例，並配合圖式作為例示。在一些實施例中，圖中顯示的範例可依照比例，但在其他實施例中，不需要按照比例。在一些實施例中，相同或相似的元件符號可代表相同、相似，或類比的元件及/或元素，但在某些實施例中，也可以表示不同的元件。在一些實施例中，描述方向的名詞，可根據字面意義解釋，但在其他實施例中，也可以不根據字面意義解釋。此外，為了清楚表示本發明的某些元件，圖示中可能省略部分元件。在說明書的描述中，為了使讀者對本發明有較完整的瞭解，提供了許多特定細節；然而，本發明可能在省略部分或全部這些特定細節的前提下，仍可實施。
在圖3的氣相沉積系統中，由於承載盤20上同時承載多個晶圓承載器21，且承載盤20和晶圓承載器21皆進行旋轉，使得在進行沉積製程時，晶圓24無法很精確的固定在同一位置上。加上晶圓24的材質有許多變化，例如藍寶石、矽、塑膠等，其熱膨脹係數皆不同，導致受熱後的尺寸不一致。上述這些因素，皆增加設計晶圓承載器21時的困難度。
圖6A為側視圖，圖6B為局部立體剖開圖，顯示根據本發明一實施例的晶圓承載器4。如圖6A和圖6B所示，較佳的，晶圓承載器4適用於一晶圓朝下的氣相沉積系統，例如圖3所介紹的氣相沉積系統2，但不限於此。在本實施例，晶圓5具有一朝下的磊晶面50，晶圓的周邊具有一角度的倒角52，而晶圓承載器的內側壁下方(或靠近下方處)具有朝晶圓方向延伸的延伸結構40，該延伸結構40具有一水平的底面402以及一傾斜的承載面404，其中底面402與承載面404具有夾角，該夾角的角度與晶圓的倒角52可以相配合。例如，晶圓5的倒角52為45度，而底面402與承載面404的夾角為45度。又例如在本發明另一實施例，晶圓的倒角52為30度，而底面402與承載面404的夾角為30度。
如圖6A和圖6B所示，本實施例中，晶圓承載器4以傾斜的承載面404支撐晶圓5的倒角52，使得晶圓5的磊晶面50可獲得最充分的利用。如圖6A和圖6B所示，在本實施例，承載面404為一個環形的結構。最理想的情況，晶圓5的倒角52完整的被晶圓承載器4傾斜的承載面404所支撐，使得所有的磊晶面50可以被沉積薄膜，沒有產生無效區域。但在實際上，如前所述，由於承載盤20(圖3)上同時承載多個晶圓承載器4，且承載盤和晶圓承載器4皆進行旋轉，以及不同材質的晶圓5具有不同的熱膨脹係數，使得晶圓5在進行沉積製程時無法很精確的固定在同一位置上。亦即，在進行沉積薄膜時，晶圓的中心(圓心)可能無法落在晶圓承載器4的中心(圓心)上。某些時候，晶圓5的中心可能會些微偏離晶圓承載器4的中心。這樣的情況，可能會導致晶圓5的周邊的部分磊晶面50仍具有小部分的無效區域。
圖7為實體照片，顯示根據圖6A和圖6B的晶圓承載器4，其所承載的晶圓5在沉積薄膜製程後的情形。為了評估磊晶面50的周邊完整情形，選定晶圓周邊的間隔的五個區域，如標示1、2、3、4、5處的磊晶面進行評估。如圖7所示，在晶圓標示1、2、3處的區域，出現部分很輕微的無效區域；在晶圓標示4的區域，並未出現無效區域；在晶圓標示5的區域，出現比較明顯的無效區域，其寬度約為400 μm。相較於習知技術晶圓承載器的無效區域可達2000 μm，本實施例的晶圓承載器4，已大幅減少無效區域。
此外，如圖6A和圖6B所示，晶圓承載器4以傾斜的承載面404支撐晶圓5的倒角52的斜面，如此製程區域的製程氣體不會受到晶圓承載器4的結構影響，其氣體流場可以維持為層流。根據流體力學，當雷諾數較小時，黏滯力對流場的影響大於慣性力，流場中流速的擾動會因黏滯力而衰減，流體流動穩定，為層流。而反應室需要的氣體流動狀態為層流，可使得氣體反應完全、避免磊晶缺陷，並提升磊晶均勻度。
圖8A為從底部視角觀看的立體圖，圖8B為側視圖，圖8C為俯視示意圖，顯示根據本發明另一實施例的晶圓承載器6與晶圓5。如圖8A至圖8C所示，較佳的，晶圓承載器6適用於一晶圓朝下的氣相沉積系統，例如圖3所介紹的氣相沉積系統2，但不限於此。在本實施例，晶圓5具有一朝下的磊晶面50，製程氣體反應後可沉積薄膜於磊晶面50上。在每個晶圓承載器6的下方，具有複數個倒掛結構60，其中每個倒掛結構60的端點具有一接觸602以支撐晶圓5的磊晶面50。在本實施例，每個晶圓承載器6的下方，具有5個倒掛結構60，但不限定於此。圖8C是晶圓5的俯視示意圖，如圖8C所示，晶圓承載器6的倒掛結構60的端點的接觸602，具有弧線的構造。
如圖8A至圖8C所示，在理想的情況下，晶圓承載器6以複數個，例如五個倒掛結構60，以接觸晶圓5的磊晶面50，可使得晶圓承載器6與晶圓5 的磊晶面50的接觸面積大幅減少。此外，在本實施例，晶圓承載器6的倒掛結構60的接觸602，具有弧線的構造，使得晶圓5的磊晶面50與晶圓承載器6的接觸面積，僅有五個弧線(可視為線接觸)，如此可大幅降低無效區域。
圖9為實體照片，顯示根據圖8A至圖8C的晶圓承載器6，其所承載的晶圓5在沉積薄膜製程後的情形。為了評估磊晶面50的周邊完整情形，選定晶圓周邊的間隔的五個區域，如標示1、2、3、4、5處的磊晶面進行評估。如圖7所示，在晶圓標示1、2、5處的區域，出現部分輕微的無效區域，其無效區域的寬度約為200至350 μm；在晶圓標示3與4的區域，出現比較明顯的無效區域，其最大寬度約為1000 μm。相較於習知技術晶圓承載器的無效區域可達2000 μm，本實施例的晶圓承載器6，已大幅減少無效區域。此外，根據實驗，晶圓承載器6的結構並不會影響製程氣體的流場，其氣體流場可以維持為層流。
圖10A為側視圖，圖10B為俯視示意圖，顯示根據本發明另一實施例的晶圓承載器7與晶圓5。在晶圓承載器7的下方，具有複數個倒掛結構70，其中每個倒掛結構70的端點具有一接觸702以支撐晶圓5的磊晶面50。在本實施例，每個晶圓承載器7的下方，具有5個倒掛結構70，但其數量不限定於此。圖10B是晶圓5的俯視示意圖，如圖10B所示，晶圓承載器7的倒掛結構70的端點的接觸702，具有圓球的構造。
如圖10A與圖10B所示，在理想的情況下，晶圓承載器7以複數個，例如五個倒掛結構，以接觸晶圓5的磊晶面50，可使得晶圓承載器7與晶圓5 的磊晶面50的接觸面積大幅減少。此外，在本實施例，晶圓承載器7的倒掛結構70的接觸702，具有圓球的構造，使得晶圓5的磊晶面50與晶圓承載器7的接觸面積，僅有五個點(可視為點接觸)，如此可大幅降低無效區域。
根據本發明實施例的晶圓承載器，在進行沉積製程時，晶圓的無效區域可被大幅降低，使提升良率。此外，晶圓承載器的結構不會影響製程氣體的流場，氣體流場可維持層流，使保持磊晶均勻性。
本說明書所揭露的每個/全部實施例，本領域熟悉技藝人士可據此做各種修飾、變化、結合、交換、省略、替代、相等變化，只要不會互斥者，皆屬於本發明的概念，屬於本發明的範圍。可對應或與本案所述實施例特徵相關的結構或方法，及/或發明人或受讓人任何申請中、放棄，或已核准的申請案，皆併入本文，視為本案說明書的一部分。所併入的部分，包含其對應、相關及其修飾的部分或全部，(1)可操作的及/或可建構的(2)根據熟悉本領域技藝人士修飾成可操作的及/或可建構的(3)實施/製造/使用或結合本案說明書、本案相關申請案，以及根據熟悉本領域技藝人士的常識和判斷的任何部分。
除非特別說明，一些條件句或字詞，例如「可以(can)」、「可能(could)」、「也許(might)」，或「可(may)」，通常是試圖表達本案實施例具有，但是也可以解釋成可能不需要的特徵、元件，或步驟。在其他實施例中，這些特徵、元件，或步驟可能是不需要的。
本文前述的文件，其內容皆併入本文，視為本案說明書的一部分。本發明提供的實施例，僅作為例示，不是用於限制本發明的範圍。本發明所提到的特徵或其他特徵包含方法步驟與技術，可與相關申請案所述的特徵或結構做任何結合或變更，部分的或全部的，其可視為本案不等的、分開的、不可替代的實施例。本發明所揭露的特徵與方法其對應或相關者，包含可從文中導出不互斥者，以及熟悉本領域技藝人士所做修飾者，其部分或全部，可以是(1)可操作的及/或可建構的(2)根據熟悉本領域技藝人士的知識修飾成可操作的及/或可建構的(3)實施/製造/使用或結合本案說明書的任何部分，包含(I)本發明或相關結構與方法的任何一個或更多部分，及/或(II)本發明所述任何一或多個發明概念及其部分的內容的任何變更及/或組合，包含所述任何一或多個特徵或實施例的內容的任何變更及/或組合。
1 氣相沉積裝置
10 反應器
11 晶圓承載器
12 承載盤
13 晶圓
14 加熱器
15 轉動機構
16 氣體輸入管線
17 氣體排放管線
2 氣相沉積系統
20 承載盤
21 晶圓承載器
22 中心軸
23 承載盤驅動系統
24 晶圓
25 對向板
26 製程區域
27 製程氣體
28 排氣區
29 加熱器
30 間隙
31 正面測量系統
31a 溫度測量器
31b 溫度測量器
31c 溫度測量器
32 反面測量系統
32a 溫度測量器
32b 溫度測量器
32c 溫度測量器
35 溫度測量系統
4 晶圓承載器
40 延伸結構
402 底面
404 承載面
5 晶圓
50 磊晶面
52 倒角
6 晶圓承載器
60 倒掛結構
602 接觸
7 晶圓承載器
70 倒掛結構
702 接觸
圖1為剖面圖，顯示習知技術的晶圓朝上化學氣相沉積裝置。
圖2A為俯視圖，顯示圖1化學氣相沉積裝置的晶圓承載器。
圖2B為圖2A在A-A方向的剖面圖，顯示化學氣相沉積裝置的晶圓承載器。
圖3為示意圖，顯示習知技術的晶圓朝下化學氣相沉積裝置。
圖4為照片，顯示習知化學氣相沉積裝置的晶圓的無效區域。
圖5為圖4的放大照片，顯示習知化學氣相沉積裝置的晶圓的無效區域。
圖6A為側視圖，顯示根據本發明第一實施例的晶圓承載器。
圖6B為局部立體剖開圖，顯示根據本發明第一實施例的晶圓承載器。
圖7為照片，顯示根據本發明第一實施例的晶圓承載器所承載晶圓的無效區域。
圖8A為底部視角的立體圖，顯示根據本發明第二實施例的晶圓承載器。
圖8B為側視圖，顯示根據本發明第二實施例的晶圓承載器。
圖8C為俯視示意圖，顯示根據本發明第二實施例的晶圓承載器與晶圓。
圖9為照片，顯示根據本發明第二實施例的晶圓承載器所承載晶圓的無效區域。
圖10A為側視圖，顯示根據本發明第三實施例的晶圓承載器。
圖10B為俯視示意圖，顯示根據本發明第三實施例的晶圓承載器與晶圓。

Claims (12)

  1. 一種化學氣相沉積系統，包含： 一承載盤，繞著一中心軸旋轉； 複數個晶圓承載器，位於該承載盤，每個該晶圓承載器承載一晶圓，該晶圓的周邊具有一倒角，每個該晶圓承載器具有朝該晶圓方向延伸的一延伸結構，該延伸結構具有一水平的底面以及一傾斜的承載面，該承載面用以承載該倒角； 一製程氣體，靠近該晶圓的一磊晶面，經加熱反應形成一薄膜沉積在該磊晶面上。
  2. 如申請專利範圍第1項的化學氣相沉積系統，其中該底面與該承載面具有一夾角，該夾角等於該倒角的角度。
  3. 如申請專利範圍第1項的化學氣相沉積系統，其中該承載面是一個環形結構。
  4. 如申請專利範圍第1項的化學氣相沉積系統，其中該承載面位於該晶圓承載器的內側壁的下方。
  5. 如申請專利範圍第1項的化學氣相沉積系統，是一種晶圓朝下的化學氣相沉積系統。
  6. 一種化學氣相沉積系統，包含： 一承載盤，繞著一中心軸旋轉； 複數個晶圓承載器，位於該承載盤，每個該晶圓承載器承載一晶圓，該晶圓具有一磊晶面，每個該晶圓承載器具有複數個倒掛結構，該倒掛結構的端點具有一接觸以承載該磊晶面； 一製程氣體，靠近該晶圓的該磊晶面，經加熱反應形成一薄膜沉積在該磊晶面上。
  7. 如申請專利範圍第6項的化學氣相沉積系統，其中該接觸具有一弧線的構造。
  8. 如申請專利範圍第6項的化學氣相沉積系統，其中每個該晶圓承載器與所承載的晶圓之間為複數個線接觸。
  9. 如申請專利範圍第6項的化學氣相沉積系統，其中該接觸具有一圓形的構造。
  10. 如申請專利範圍第6項的化學氣相沉積系統，其中每個該晶圓承載器與所承載的晶圓之間為複數個點接觸。
  11. 如申請專利範圍第6項的化學氣相沉積系統，其中該倒掛結構位於該晶圓承載器的下方。
  12. 如申請專利範圍第6項的化學氣相沉積系統，是一種晶圓朝下的化學氣相沉積系統。
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