JP5543535B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP5543535B2 JP5543535B2 JP2012156092A JP2012156092A JP5543535B2 JP 5543535 B2 JP5543535 B2 JP 5543535B2 JP 2012156092 A JP2012156092 A JP 2012156092A JP 2012156092 A JP2012156092 A JP 2012156092A JP 5543535 B2 JP5543535 B2 JP 5543535B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (14)
- 基板の表面に向かって第1ガスを噴射する第1電極部;
前記第1電極部と離隔されて基板を支持する基板支持台;及び
前記基板支持台と離隔配置され、前記基板の背面に向かって複数形成されて前記基板の背面に向かって第2ガスを噴射する噴射孔を有し、電源が印加されて前記基板支持台に支持される前記基板の背面との間にプラズマを生成する第2電極部;
を含むプラズマ処理装置であって、
前記基板支持台は、
前記基板を搭載させるように構成される少なくとも一つ以上のアーム;及び
前記アームから前記基板の搭載位置方向に延設される支持部;
を含み、
前記支持部は、前記アームを連結して一部に開放部が形成された、前記基板搭載方向に延設される多数の支持ピンを有する支持リング
を含み、
前記第2電極部には、前記第2電極部の外縁に形成されて前記第2電極部の中心軸方向に第3ガスを噴射させて、前記第2電極部から前記基板の背面に向かって噴射される前記第2ガスを拘束する噴射口が形成され、
前記噴射口は、
前記第2電極部の上部より延設されるか、或いは、
前記第2電極部に一体に設けられ、前記第2電極部において噴射方向にガスが流通されるように曲率が形成された傾斜を有し、前記噴射口の一部を閉鎖するように閉塞部が形成されて、前記第3ガスは前記閉塞部に沿って噴射されて前記第2電極部の中心方向に噴射される
ことを特徴とするプラズマ処理装置。 - 前記支持部は、前記支持リングの前記開放部に配置可能な補助具;及び
前記補助具と連結され、個別駆動可能な補助アーム;
を含むことを特徴とする請求項1記載のプラズマ処理装置。 - 前記第1ガスは、非反応性ガスで、前記第2ガスは、反応性ガスであって、
前記噴射口は、前記第2電極部の中心軸方向を向くように形成されて、前記第2電極部の上部表面と傾斜をなすように形成されるか、或いは、
前記第2電極部の噴射孔が形成された方向と同じ方向に延設される噴射構造体に複数の噴射口が前記第2電極部の中心方向を向くように形成される
ことを特徴とする請求項1記載のプラズマ処理装置。 - 前記基板支持台には、前記第2ガスを拘束する第3ガスが噴射される噴射口が設けられることを特徴とする請求項1記載のプラズマ処理装置。
- 前記第2電極部の上部表面と傾斜をなすように形成された前記噴射口は、ガス排出端部が漸進的に大きく形成されたことを特徴とする請求項3記載のプラズマ処理装置。
- 前記第1電極部には、前記第1ガスを前記基板上の外郭方向に流動させるように噴射孔が設けられて、前記噴射孔は、前記基板上の外郭方向に傾斜を成して形成されることを特徴とする請求項1記載のプラズマ処理装置。
- 前記第1電極部の前記噴射孔は、前記基板上の外郭方向に漸進的に大きく、又は小さく形成されることを特徴とする請求項6記載のプラズマ処理装置。
- 前記第1電極部の前記噴射孔は、複数が前記噴射孔と連通された供給孔から分岐して、前記供給孔から等角を成して形成されるか、或いは、前記供給孔と同心を成す環形に形成されることを特徴とする請求項6記載のプラズマ処理装置。
- プラズマ処理装置内の第1電極部と、第2電極部との間の基板支持台上に、パターン部が上方を向けるように基板を搭載させる段階;
前記搭載された基板と前記第1電極部との間の間隙を調整する段階;
前記第1電極部と対向する前記基板の表面である第1面に第1ガスを噴射させて、前記第2電極部と対向する前記基板の背面である第2面に第2ガスを噴射させる段階;
前記第2電極部の外縁部で前記第2電極部の中心方向に第3ガスを噴射させて、前記第2電極部から前記基板の背面に向かって噴射される第2ガスを拘束する段階;及び
前記第2電極部に電源を印加してプラズマを生成させて、前記基板の第2面をプラズマ処理する段階;
を含むプラズマ処理方法であって、
前記ガス噴射段階以前に、前記第2電極部を移動して、前記第1電極部、又は前記基板支持台上に固定された前記基板との間隔を調整する段階を更に含むことを特徴とするプラズマ処理方法。 - 前記第2電極部に電源を印加する以前に、前記第3ガスを前記基板支持台から噴射させる段階を更に含むことを特徴とする請求項9記載のプラズマ処理方法。
- 前記基板周辺において、前記第2ガス、及び前記第3ガスのガス圧は、前記第1ガスのガス圧より弱いか、或いは、同じであることを特徴とする請求項10記載のプラズマ処理方法。
- 前記第3ガスのガス圧は、前記第2ガスのガス圧より大きいか、或いは、同じであることを特徴とする請求項10記載のプラズマ処理方法。
- 前記間隙は、0.1ないし0.7mmであることを特徴とする請求項9記載のプラズマ処理方法。
- 前記間隔は、5ないし40mmであることを特徴とする請求項9記載のプラズマ処理方法。
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070025874A KR101357699B1 (ko) | 2007-03-16 | 2007-03-16 | 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법 |
KR10-2007-0025874 | 2007-03-16 | ||
KR1020070036576A KR20080092766A (ko) | 2007-04-13 | 2007-04-13 | 기판 지지대 및 이를 구비하는 플라즈마 처리 장치 |
KR1020070036578A KR101362814B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 방법 |
KR10-2007-0036579 | 2007-04-13 | ||
KR1020070036577A KR101333521B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 장치 |
KR10-2007-0036577 | 2007-04-13 | ||
KR1020070036579A KR101362815B1 (ko) | 2007-04-13 | 2007-04-13 | 플라즈마 처리 방법 |
KR10-2007-0036578 | 2007-04-13 | ||
KR10-2007-0036576 | 2007-04-13 |
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JP2009553522A Division JP5349341B2 (ja) | 2007-03-16 | 2008-03-13 | プラズマ処理装置及びプラズマ処理方法 |
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JP2012256895A JP2012256895A (ja) | 2012-12-27 |
JP5543535B2 true JP5543535B2 (ja) | 2014-07-09 |
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JP2009553522A Expired - Fee Related JP5349341B2 (ja) | 2007-03-16 | 2008-03-13 | プラズマ処理装置及びプラズマ処理方法 |
JP2012156092A Expired - Fee Related JP5543535B2 (ja) | 2007-03-16 | 2012-07-12 | プラズマ処理装置及びプラズマ処理方法 |
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US (1) | US8888950B2 (ja) |
JP (2) | JP5349341B2 (ja) |
TW (1) | TWI597772B (ja) |
WO (1) | WO2008114958A1 (ja) |
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KR100524881B1 (ko) | 2003-12-19 | 2005-10-31 | 주식회사 에이디피엔지니어링 | 핀 지지대가 외부에 구비된 진공처리 장치 |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
KR101149332B1 (ko) | 2005-07-29 | 2012-05-23 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
US8852349B2 (en) * | 2006-09-15 | 2014-10-07 | Applied Materials, Inc. | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
-
2008
- 2008-03-13 WO PCT/KR2008/001430 patent/WO2008114958A1/en active Application Filing
- 2008-03-13 JP JP2009553522A patent/JP5349341B2/ja not_active Expired - Fee Related
- 2008-03-13 US US12/528,326 patent/US8888950B2/en active Active
- 2008-03-14 TW TW097109241A patent/TWI597772B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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US8888950B2 (en) | 2014-11-18 |
JP2010521808A (ja) | 2010-06-24 |
TWI597772B (zh) | 2017-09-01 |
US20100059478A1 (en) | 2010-03-11 |
JP5349341B2 (ja) | 2013-11-20 |
TW200908136A (en) | 2009-02-16 |
JP2012256895A (ja) | 2012-12-27 |
WO2008114958A1 (en) | 2008-09-25 |
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