TWI626700B - 具有電漿能力之半導體反應室 - Google Patents

具有電漿能力之半導體反應室 Download PDF

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TWI626700B
TWI626700B TW103124509A TW103124509A TWI626700B TW I626700 B TWI626700 B TW I626700B TW 103124509 A TW103124509 A TW 103124509A TW 103124509 A TW103124509 A TW 103124509A TW I626700 B TWI626700 B TW I626700B
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羅勃 布萊恩 米里根
佛瑞德 阿羅寇薩伊
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Ａｓｍ智慧財產控股公司
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Abstract

本發明提供一種處理室，其包括：一反應室，其具有一處理區域；一處理氣體入口，其與該處理區域連通；一第一受激物質產生區，其與該處理氣體入口連通；及一第二受激物質產生區，其與該處理氣體入口連通。一種處理一基板之方法，其包括以下步驟：將一基板裝載於一處理區域內；在一第一脈衝期間使一第一受激物質產生區活化以將一第一受激物質前驅體提供至該處理區域；及，在一第二脈衝期間使一第二受激物質產生區活化以將不同於該第一受激物質前驅體之一第二受激物質前驅體提供至該處理區域。

Description

具有電漿能力之半導體反應室
本發明大體係關於半導體處理，且更特定言之，係關於用於將處理氣體之受激物質提供至反應室中之基板或晶圓的裝置及方法。
典型地在基板於受控條件下支撐於腔室內之情況下，進行半導體製造程序。為了許多目的，半導體基板(例如，晶圓)係在處理室內部進行加熱。舉例而言，可藉由與內部加熱之晶圓固持器或「夾盤」直接實體接觸而加熱基板。「晶座」為系統中所使用之晶圓支撐件，其中晶圓及晶座吸收熱量。
用於處理之重要的受控條件中的一些受控條件包括(但不限於)腔室之壓力、進入腔室中之流體流動速率、反應室之溫度、流至反應室中之流體的溫度，及在晶圓裝載期間在晶座上之晶圓位置。
在反應室內加熱可以數種方式發生，包括定位於基板表面上方用於直接加熱晶座之燈組或陣列，或定位於晶座下方之晶座加熱器/底座加熱器。傳統地，底座型式加熱器延伸穿過底壁至腔室中，且晶座安裝於加熱器之頂表面上。加熱器可包括封閉於加熱器內之電阻性加熱元件以提供傳導熱且增加晶座溫度。
一致處理及一致結果大體上需要仔細控制及計量系統中之 處理氣體。用於控制處理氣體之最後的解決措施中之一者係在簇射頭處，在該簇射頭處，處理氣體接著接觸反應室中之晶圓。此外，歸因於簇射頭孔變得堵塞或在簇射頭內發生寄生前驅體反應，因此獲得最佳流動速率及均勻性可能時常為困難的。
基於電漿之反應器可使用與反應器成一體之直接電漿或定位於反應器之上游的遠端電漿。直接電漿可產生更強烈且有效之電漿，但亦可能損壞基板。相反，遠端電漿減小對基板之損壞的風險，但可能遭遇受激物質活性較小且因此不會恰當地與基板上之薄膜起反應。
本文揭示關於一種具有用於處理一晶圓之電漿能力之反應室的各種態樣及實施。在一態樣中，一種處理室包括：一反應室，其具有一處理區域；一處理氣體入口，其與該處理區域連通；一第一受激物質產生區，其與該處理氣體入口連通；及一第二受激物質產生區，其與該處理氣體入口連通。
在一實施中，該第一受激物質產生區及該第二受激物質產生區可彼此連通。該第一受激物質產生區及該第二受激物質產生區可選擇性地彼此連通。一閥可定位於該第一受激物質產生區與該處理氣體入口之間。一閥可定位於該第二受激物質產生區與該處理氣體入口之間。該第一受激物質產生區及該第二受激物質產生區可為非同軸的。
該第一受激物質產生區及該第二受激物質產生區可為同軸對準的。該第一受激物質產生區及該第二受激物質產生區可產生可燃不相容受激前驅體。該第一受激物質產生區可激發一氟基化學物且該第二受激 物質產生區可激發一氯基化學物。該第一受激物質產生區及該第二受激物質產生區可各自進一步包括一電感耦合電漿產生器。該第一受激物質產生區電感耦合電漿產生器及該第二受激物質產生區電感耦合電漿產生器各自單獨受控。該第一受激物質產生區及該第二受激物質產生區可各自進一步包括一電容耦合電漿產生器。該第一受激物質產生區電容耦合電漿產生器及該第二受激物質產生區電容耦合電漿產生器各自單獨受控。
該處理室可進一步包括定位於該第一受激物質產生區與該第二受激物質產生區之間的一惰性氣體流。該第一受激物質產生區及該第二受激物質產生區可藉由惰性氣體閥而分離。該第一受激物質產生區及該第二受激物質產生區可至少部分地由氧化鋁或石英構成。該第一受激物質產生區及該第二受激物質產生區可藉由一單一線圈來激勵。
在另一態樣中，一種處理一基板之方法可包括以下步驟：將一基板裝載於一處理區域內；在一第一脈衝期間使一第一受激物質產生區活化以將一第一受激物質前驅體提供至該處理區域；及，在一第二脈衝期間使一第二受激物質產生區活化以將不同於該第一受激物質前驅體之一第二受激物質前驅體提供至該處理區域。
在一實施中，該第一受激物質產生區及該第二受激物質產生區為不同的產生區。
在另一態樣中，將複數個前驅體遞送至一處理區域之方法可包括以下步驟：提供與該處理區域連通之一第一受激物質產生區及第二受激物質產生區；在激發該第一受激物質產生區之同時選擇性地使一第一前驅體流經該第一受激物質產生區；及在激發該第二物質產生區之同時選擇 性地使一第二前驅體流經該第二受激物質產生區。
提供此【發明內容】以便以簡化形式引入概念之選擇，該等概念進一步描述於下文【實施方式】中。此【發明內容】既不欲識別所主張之標的物之關鍵特徵或基本特徵，亦不欲用以限制所主張之標的物之範疇。此外，所主張之標的物不限於解決本發明之任何部分中所提及之任何或所有缺點的實施。
18‧‧‧處理室
20‧‧‧反應室
22‧‧‧上部腔室
24‧‧‧下部腔室
26‧‧‧簇射頭
28‧‧‧晶座總成
30‧‧‧晶圓
32‧‧‧入口歧管
33‧‧‧箭頭
34‧‧‧閥
36‧‧‧分離管
38‧‧‧閥
40‧‧‧閥
42‧‧‧控制器
44‧‧‧控制線
46‧‧‧控制線
48‧‧‧控制線
50‧‧‧前驅體A
52‧‧‧出口管
54‧‧‧前驅體B
56‧‧‧出口管
58‧‧‧第一受激物質產生區
60‧‧‧第二受激物質產生區
62‧‧‧法拉第遮罩
64‧‧‧控制線
66‧‧‧控制線
68‧‧‧控制線
70‧‧‧控制線
72‧‧‧受激物質產生控制器
74‧‧‧安全外鞘
76‧‧‧通電線圈
78‧‧‧產生區管道
80‧‧‧冷卻區
82‧‧‧開口
84‧‧‧供電及匹配電路
86‧‧‧切換電路
88‧‧‧致動器
90‧‧‧箭頭
92‧‧‧箭頭
94‧‧‧箭頭
96‧‧‧第二受激物質產生區
98‧‧‧惰性氣體流
100‧‧‧外區
102‧‧‧區壁
104‧‧‧區壁
106‧‧‧間隙
108‧‧‧區壁
110‧‧‧中央開口
112‧‧‧箭頭
114‧‧‧箭頭
116‧‧‧箭頭
118‧‧‧箭頭
120‧‧‧第三實施受激物質產生區
122‧‧‧內電極
124‧‧‧外電極
126‧‧‧第四實施受激物質產生區
128‧‧‧外區
130‧‧‧第一壁
132‧‧‧第二壁
134‧‧‧內區
136‧‧‧第三壁
138‧‧‧第四壁
圖1說明具有雙電漿產生區之反應室的示意性剖視圖。
圖2說明雙電漿產生區之示意性剖視圖。
圖3說明雙電漿產生區之示意性剖視圖。
圖4說明雙電漿產生區之示意性剖視圖。
圖5說明第二態樣雙電漿產生區之示意性剖視圖。
圖6說明大體關於圖5中之線6-6截取的第二態樣雙電漿產生區之示意性俯視剖視圖。
圖7說明第二態樣雙電漿產生區之示意性剖視圖。
圖8說明第二態樣雙電漿產生區之示意性剖視圖。
圖9說明第三態樣雙電漿產生區之示意性剖視圖。
圖10說明第三態樣雙電漿產生區之示意性俯視剖視圖。
圖11說明第四態樣雙電漿產生區之放大的示意性剖視圖。
可能依據功能區塊組件及各種處理步驟描述本發明態樣及實施。此等功能區塊可藉由經組態以執行指定功能且達成各種結果之任何 數目個硬體或軟體組件來實現。舉例而言，本發明態樣可使用可執行多種功能之各種感測器、偵測器、流量控制器件、加熱器，及其類似者。另外，本發明態樣及實施可結合任何數目種處理方法來實踐，且所描述之裝置及系統可使用任何數目種處理方法，且所描述之裝置及系統僅為本發明之應用的實例。
圖1說明具有反應室20之處理室18，反應室20具有上部腔室22及下部腔室24。上部腔室22包括簇射頭26，而下部腔室24大體包括如此項技術中可能通常已知之晶座總成28以接納用於裝載、卸載及處理的晶圓30。儘管本發明說明及描述在具有上部區段及下部區段之分裂腔室中的簇射頭26，但將簇射頭26併入於非分裂腔室反應器或無簇射頭之交叉流反應器中在本發明之精神及範疇內。如通常亦已知的，簇射頭26經饋入以入口歧管32(或交叉流反應器中之歧管端口噴射器或其他合適的噴射構件)，因此反應器內之氣體流藉由箭頭33表示。
入口歧管32可包括閥34，其為前驅體遞送系統中通常已知的且可為標準氣動閥、機械閥、惰性氣體閥或任何其他合適的閥機構。在一些實施中，閥34之上游可為分離管36，其中額外閥38及40類似於閥34，其起作用以選擇性地將各種前驅體入口彼此隔離。儘管未特別展示，但額外淨化或真空端口及/或線路可定向於閥38及40之下游以輔助淨化分離管36及入口歧管32。閥34、38及40可由控制器42分別經由控制線44、46及48或任何其他合適的控制系統來單獨控制。
前驅體A 50穿過在閥38之上游的出口管52，而前驅體B 54穿過在閥40之上游的出口管56。前驅體A 50穿過第一受激物質產生區58， 而前驅體B 54穿過第二受激物質產生區60。如可見的，可使用恰當的閥來隔離第一受激物質產生區58與第二受激物質產生區60，使得可防止流經各別受激物質產生區中之每一者的前驅體之間的反應。
第一受激物質產生區58及第二受激物質產生區60中之每一者可包括在每一區之外周邊上的法拉第遮罩62。第一受激物質產生區58可包括控制線64及66，而第二受激物質產生區60可包括控制線68及70。各種控制線64、66、68及70連接至如下文將更詳細描述之受激物質產生控制器72。
圖2說明第一受激物質產生區58及第二受激物質產生區60之剖視圖。第一受激物質產生區58及第二受激物質產生區60兩者包括法拉第遮罩62、安全外鞘74、通電線圈76，及產生區管道78。冷卻區80形成於安全外鞘74與產生區管道78之間，以提供經冷卻之惰性氣體流來接觸定位於其中之通電線圈76且維持通電線圈76之恰當操作溫度。產生區管道78中包括開口82，以用於取決於該管道定位於哪個受激物質產生區中而接納前驅體A 50或前驅體B。有利地，開口82與適當的前驅體瓶流體連通以將處理氣體供應至出口管52或56，接著穿過閘閥38或40，且最終穿過閘閥34，之後到達反應器室。產生區管道78可由用於將在開口82內加以利用之前驅體的任何合適材料構成。舉例而言，當利用併有氟、氧或氫之前驅體時，產生區管道可為氧化鋁，而當利用併有氯、氧或氯化矽之前驅體時，產生區管道可為石英。關鍵之處在於：在無不合需要之反應或粒子產生之情況下，蝕刻或沈積化學物與產生區管道材料相容。通電線圈76連接至控制線64、66或68、70(在適當時)以在受激物質產生區處提供電流， 以形成磁場且在用於前驅體A 50或前驅體B 54之適當開口82內形成受激物質。
現參看控制器72，展示供電及匹配電路84在控制器72內，而切換電路86亦可併入於控制器72內且由處理室控制器(圖中未示)根據適當的處理配方或程式操作。供電及匹配電路84經設計以將恰當的阻抗及電力提供至通電線圈76以在適當的產生區管道78內產生足夠的受激物質，使得受激物質可隨惰性氣體移動穿過閘閥、簇射頭且最終穿過晶圓表面。亦進一步設想，第一受激物質產生區及第二受激物質產生區中之每一者可能需要不同的或可變的電力，在該狀況下，控制器72可經調節以按需要提供此可變電流且供電電路可利用RF或用於電力之任何其他合適的機構。返回參看閥34、38及40，致動器88定位於每一閥中且經電氣或氣動控制以取決於正執行之製程步驟來打開或關閉。熟習此項技術者將立即瞭解，可併有任何合適機構以防止/准許氣體流經閥，包括致動器88或此項技術中已知之任何其他器件或方法。較佳地，閥將能夠具有高自由基電導率以限制及/或防止受激物質之損失。
圖3說明前驅體A 50如藉由箭頭90指示經引導穿過產生區管道78，而圖4說明前驅體B 54如藉由箭頭92指示經引導穿過產生區管道78。在圖3中，當前驅體A 50針對晶圓處理為必要的時，在適當量之能量已經由線圈76轉移至前驅體之後，在閘閥38及閘閥34在與箭頭94相關聯之方向上打開時，閘閥40保持處於關閉位置。類似地，當前驅體B 54針對晶圓處理為必要的時，在適當量之能量已經由線圈76轉移至前驅體之後，在閘閥40及閘閥34在與箭頭94相關聯之方向上打開時，閘閥38保持 處於關閉位置。
在操作中，圖3及圖4中所展示之製程係單獨執行的，使得前驅體(無論是否受激發)不會相遇。在一些例子中，若前驅體將混合，則將發生嚴重的損壞。此外，受激物質產生區可彼此分離，使得即使兩個受激物質產生區具備活性物質，活性物質中亦僅一者或無一者(在腔室淨化步驟期間)到達反應室。在另一實施中，切換電路86可用以選擇性地一次僅使一個適當的受激物質產生區活化，以減小電力消耗。最終，如在圖4中可見，在一實施中，第一受激物質產生區及第二受激物質產生區可彼此偏移且非同軸。
圖5至圖8說明單一法拉第遮罩62內之第一及第二受激物質產生區96的第二具體實例。在此第二實施中，前驅體A 50及前驅體B 54彼此同軸定位，且共用相同的受激物質產生源或通電線圈76及安全外鞘74。此外，類似於先前實施，冷卻惰性氣體可流經通電線圈76穿過冷卻區80。第二實施96亦可直接併有穿過第一受激物質產生區及第二受激物質產生區兩者之惰性氣體流98，以將各別受激物質前驅體引導至反應室。
在所揭示之第二實施96中，前驅體B 54流經由區壁102及104形成之外區100，區壁102及104可以由與前驅體(以非限制性實例說明，氧化鋁或石英)互補且相容之材料形成的圓筒之形狀形成。間隙106可定位於區壁104之徑向向內方，而區壁108形成中央開口110。區壁108亦較佳由與其中所使用之前驅體互補且相容之材料形成，且可為(以非限制性實例說明)氧化鋁或石英。
圖7說明前驅體A 50經活化且如藉由箭頭112指示移動穿 過中央開口110。前驅體A 50可隨惰性氣體98移動穿過第一受激物質產生區且可離開第一受激物質產生區，此係因為閘閥被打開以准許在中央開口110與反應室20之間連通。箭頭114指示前驅體B 54之流動路徑且閘閥阻止流動，使得第二受激物質產生區內之前驅體B 54無法離開外區100。因此，可基於選擇性將選擇性受激之前驅體與非相容前驅體一起提供至反應室。
圖8說明前驅體B 54經活化且如藉由箭頭116指示移動穿過外區100。前驅體B 54可隨惰性氣體98移動穿過第二受激物質產生區且可離開第二受激物質產生區，此係因為閘閥被打開以准許在外區100與反應室20之間連通。箭頭118指示前驅體A 50之流動路徑且閘閥阻止流動，使得第一受激物質產生區內之前驅體A 50無法離開中央開口110。在操作中，在蝕刻或沈積製程期間，在循環製程中，將前驅體A 50提供至無前驅體B 54之反應室20且接著將前驅體B54提供至無前驅體A 50之反應室20。以此方式，可在反應室內利用不相容之前驅體而無損壞或危險。
圖9及圖10說明具有電容耦合電漿產生器而非如上文所展示及描述之電感耦合電漿產生器的第三實施受激物質產生區120之視圖。再一次，區壁102及104之形狀可為圓柱形，且界定外區100，在該外區中，可激發前驅體A 50且接著選擇性地將其提供至反應室20。電漿產生器可包括分別連接至控制線64及66之內電極122及外電極124。在操作中，藉由控制器72使電容耦合電漿內電極122及外電極124活化，且可選擇性地激發前驅體A 50，接著使前驅體流入至反應室20中以用於沈積或蝕刻製程。在功能上，第三實施受激物質產生區120類似於先前所描述之具體實例， 例外之處在於併有電容耦合產生器而非電感耦合產生器。此外，在不脫離本發明之精神及範疇的情況下，第三實施受激物質產生區120可利用類似於第一態樣之經非同軸配置之產生區，且第二受激物質產生區120可以類似於先前所描述之方式的方式定位為與反應室選擇性連通。
圖11說明具有法拉第遮罩62及安全外鞘74之受激物質產生區126的第四實施。類似於先前之電容耦合電漿產生器，內電極122及外電極124分別定位於前驅體區內部及外部。外區128係由第一壁130及第二壁132形成，其中前驅體在該兩個壁之間流動。內區134係由第三壁136及第四壁138形成。取決於前驅體與彼等特定壁之接觸，壁130、132、136及138可由任何合適材料(氧化鋁、石英等)形成。在操作中，單一電容耦合電漿產生器可激發內區134及外區128兩者中之前驅體，且彼等受激物質之流動係藉由閘閥來控制。或者，單獨的電容耦合電漿產生器可用於每一單獨前驅體，且每一前驅體之受激物質的流動可經由閘閥或基於電漿操作來獨立地控制。
在操作中，將晶圓30裝載於晶座28上，且在第一受激物質產生區或第二受激物質產生區中之一者內活化或激發第一前驅體，接著使第一前驅體穿過必要的閘閥且穿過簇射頭26進入反應室中。同時，第二前驅體可保持處於受激物質產生區中之另一者內，直至閘閥被打開以准許第二前驅體穿過其為止。接下來，用閘閥停止第一前驅體流動，且可將第二受激前驅體或惰性氣體提供至反應室。由於展示及描述了電漿產生器之多個實施，因此可連續地操作單一CCP或ICP以維持兩個受激物質產生區中之受激物質，或可恰好在反應室中需要受激物質之前利用及觸發單獨的 CCP及ICP。以此方式，入口歧管及反應室可選擇性地接納任何數目個前驅體之受激物質，而前驅體在處理期間並未彼此接觸。因此，可見，可利用不相容之受激前驅體來處理晶圓，或藉由選擇性地使在單獨的電漿產生區中經活化之受激物質流動而蝕刻反應室。
用於具有雙電漿產生區之反應室的方法及裝置之此等及其他具體實例可併有如關於用於量測上文所描述之器件的裝置之具體實例所描述的概念、具體實例及組態。所展示及描述之特定實施說明本發明及其最佳模式，且不欲另外以任何方式限制態樣及實施的範疇。實際上，為了簡潔起見，可能並未詳細描述系統之習知製造、連接、製備及其他功能態樣。此外，在各個圖式中所展示之任何連接線意欲表示各種元件之間的例示性功能關係及/或實體耦合。許多替代或額外的功能關係或實體連接可存在於實際系統中，及/或可能不存在於一些具體實例中。此外，其他設計之各種態樣及實施可併入於本發明之範疇內。
如本文所使用，術語「包含」或其任何變化意欲參考非排他性包括，使得包含元件之清單的製程、方法、物品、組成物或裝置不僅包括所敍述之彼等元件，而且可包括並未明確地列出的或此製程、方法、物品、組成物或裝置所固有的其他元件。在不脫離本發明之一般原理的情況下，在本發明之實踐中所使用的上文所描述之結構、配置、應用、比例、元件、材料或組件的其他組合及/或修改(以及並未具體敍述之彼等)可變化或以其他方式經特別調適以適應特定環境、製造說明書、設計參數或其他操作要求。

Claims (20)

  1. 一種處理室，其包含：反應室，其具有處理區域；處理氣體入口，其與該處理區域連通；第一受激物質產生區，其與該處理氣體入口連通；及，第二受激物質產生區，其與該處理氣體入口連通，其中該第一受激物質產生區及該第二受激物質產生區選擇性地彼此連通。
  2. 如申請專利範圍第1項之處理室，其中該第一受激物質產生區及該第二受激物質產生區被包含在法拉第遮罩內。
  3. 如申請專利範圍第1項之處理室，其中反應室選擇性地暴露於來自該第一受激物質產生區的第一受激物質及來自該第二受激物質產生區的第二受激物質。
  4. 如申請專利範圍第1項至第3項中任一項之處理室，其中閥定位於該第一受激物質產生區與該處理氣體入口之間。
  5. 如申請專利範圍第1項至第3項中任一項之處理室，其中閥定位於該第二受激物質產生區與該處理氣體入口之間。
  6. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區為非同軸的。
  7. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區為同軸對準的。
  8. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激 物質產生區及該第二受激物質產生區產生可燃不相容前驅體。
  9. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區激發氟基化學物且該第二受激物質產生區激發氯基化學物。
  10. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區各自進一步包含電感耦合電漿產生器。
  11. 如申請專利範圍第10項之處理室，其中該第一受激物質產生區電感耦合電漿產生器及該第二受激物質產生區電感耦合電漿產生器各自單獨受控。
  12. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區各自進一步包含電容耦合電漿產生器。
  13. 如申請專利範圍第12項之處理室，其中該第一受激物質產生區電容耦合電漿產生器及該第二受激物質產生區電容耦合電漿產生器各自單獨受控。
  14. 如申請專利範圍第1項至第3項中任一項之處理室，其進一步包含定位於該第一受激物質產生區與該第二受激物質產生區之間的惰性氣體流。
  15. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區係藉由惰性氣體閥分離。
  16. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激 物質產生區及該第二受激物質產生區至少部分地由氧化鋁或石英構成。
  17. 如申請專利範圍第1項至第3項中任一項之處理室，其中該第一受激物質產生區及該第二受激物質產生區係用單一線圈激勵。
  18. 一種處理一基板之方法，其包含以下步驟：將基板裝載於處理區域內；在第一脈衝期間使第一受激物質產生區活化以將第一受激物質前驅體提供至該處理區域；及，在第二脈衝期間使第二受激物質產生區活化以將不同於該第一受激物質前驅體之第二受激物質前驅體提供至該處理區域，其中該第一受激物質產生區及該第二受激物質產生區選擇性地彼此連通。
  19. 如申請專利範圍第18項之方法，其中該第一受激物質產生區及該第二受激物質產生區為不同的產生區。
  20. 一種將複數個前驅體遞送至處理區域之方法，其包含以下步驟：提供與該處理區域連通之第一受激物質產生區及第二受激物質產生區；在激發該第一受激物質產生區之同時選擇性地使第一前驅體流經該第一受激物質產生區；及，在激發該第二物質產生區之同時選擇性地使第二前驅體流經該第二受激物質產生區。
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