JP2011514660A - 閉ループmocvdにおける堆積制御 - Google Patents
閉ループmocvdにおける堆積制御 Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 35
- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 197
- 239000000758 substrate Substances 0.000 claims abstract description 197
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000005259 measurement Methods 0.000 claims description 42
- 229910002601 GaN Inorganic materials 0.000 claims description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000009529 body temperature measurement Methods 0.000 claims description 6
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000004611 spectroscopical analysis Methods 0.000 claims description 4
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- 238000000572 ellipsometry Methods 0.000 claims description 3
- 238000005424 photoluminescence Methods 0.000 claims description 3
- 238000000628 photoluminescence spectroscopy Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 22
- 238000012544 monitoring process Methods 0.000 abstract description 13
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 73
- 230000008569 process Effects 0.000 description 38
- 239000002243 precursor Substances 0.000 description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 150000004820 halides Chemical class 0.000 description 6
- 238000012625 in-situ measurement Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003070 Statistical process control Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- -1 Compound Nitride Chemical class 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
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Abstract
Description
本発明の実施形態は、一般に、基板上での化学気相蒸着(CVD)のプロセス監視及び制御のための方法及び装置に係り、特に有機金属化学気相蒸着及び/又は水素化物気相エピタキシ処理システムで使用するための閉ループ処理制御システムに関する。
III−V族膜は、多種多様な半導体デバイス(短波長発光ダイオード(LED)、レーザーダイオード(LD)等)及び高出力、高周波、高温トランジスタ、集積回路を含む電子デバイスの開発及び製造において重要性を増しつつある。例えば、短波長(例えば、青/緑〜紫外線)LEDは、III族窒化物半導体材料である窒化ガリウム(GaN)を使用して製造される。GaNを使用して製造された短波長LEDでは、非窒化物半導体材料(II−VI族材料等)を使用して製造された短波長LEDよりはるかに高い効率及び長い動作寿命が得られる。
Claims (15)
- 基板上にIII−V族膜が堆積されるチャンバを備えた基板処理システムであって、
前記チャンバは、
処理容積を形成する1つ以上の壁と、
処理容積の上部を画成するシャワーヘッドアセンブリと、
シャワーヘッドアセンブリの下方に位置決めされ且つ処理容積の底部を画成する、基板を保持するための複数の凹部を有する回転可能な基板キャリアとを備えており、
前記基板処理システムは、
基板キャリア上に配置された基板の表面特性を測定するように構成された1つ以上の計測ツールと、
計測ツールによる測定値に従ってチャンバの処理パラメータを制御するためのシステムコントローラとを備える基板処理システム。 - 1つ以上の計測ツールの少なくとも1つが、シャワーヘッドアセンブリに配置される請求項1記載のシステム。
- 1つ以上の計測ツールの少なくとも1つがチャンバの1つ以上の壁に配置される請求項1記載のシステム。
- III−V族膜が窒化ガリウムである請求項1記載のシステム。
- チャンバが、有機金属化学気相蒸着(MOCVD)チャンバ又は水素化物気相エピタキシ(HVPE)チャンバである請求項1記載のシステム。
- 1つ以上の計測ツールが、高温測定、反射光測定、偏光解析、フォトルミネッセンス分光、エレクトロルミネッセンス分光、X線回折(XRD)又はバンド端温度測定技法を使用して基板の表面の特性を測定するように構成される請求項1記載のシステム。
- 1つ以上の計測ツールによって測定される基板の表面の特性が、厚さ、反射率、材料組成、応力、ひずみ、フォトルミネッセンス、エレクトロルミネッセンス及び温度から成る群から選択される特性である請求項1記載のシステム。
- 搬送チャンバと、
搬送チャンバ内に配置されたロボットと、
搬送チャンバと連通した、少なくとも1つはIII−V族膜を基板上に堆積するように構成されている1つ以上の処理チャンバと、
搬送チャンバと連通したサービスチャンバと、
基板の表面特性を測定するように構成された1つ以上の計測ツールと、
計測ツールによる測定値に従って1つ以上の処理チャンバの処理パラメータを制御するためのシステムコントローラとを備えるクラスタツール。 - 1つ以上の計測ツールの少なくとも1つがサービスチャンバ内に配置される請求項8記載のクラスタツール。
- 1つ以上の計測ツールの少なくとも1つが搬送チャンバに連結され且つ流体連通している請求項8記載のクラスタツール。
- 1つ以上の計測ツールの少なくとも1つが搬送チャンバ内に配置される請求項8記載のクラスタツール。
- 1つ以上の計測ツールの少なくとも1つが少なくとも1つの処理チャンバ内に配置される請求項8記載のクラスタツール。
- 少なくとも1つの処理チャンバが、MOCVD又はHVPE堆積用に構成される請求項8記載のクラスタツール。
- 1つ以上の計測ツールが、高温測定、反射光測定、偏光解析、フォトルミネッセンス分光、エレクトロルミネッセンス分光、XRD又はバンド端温度測定技法を使用して基板の表面の特性を測定するように構成される請求項8記載のクラスタツール。
- III−V族膜が窒化ガリウムである請求項8記載のクラスタツール。
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Also Published As
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CN101911253A (zh) | 2010-12-08 |
WO2009099776A9 (en) | 2011-01-06 |
KR20100106608A (ko) | 2010-10-01 |
WO2009099776A1 (en) | 2009-08-13 |
CN101911253B (zh) | 2012-08-22 |
US20110308453A1 (en) | 2011-12-22 |
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