JP2016540892A - 堆積アレンジメント、堆積装置、及びこれらの操作方法 - Google Patents
堆積アレンジメント、堆積装置、及びこれらの操作方法 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims description 25
- 239000000463 material Substances 0.000 claims abstract description 156
- 238000001704 evaporation Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000008020 evaporation Effects 0.000 claims abstract description 76
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 43
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 43
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 32
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 32
- 239000011364 vaporized material Substances 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 claims abstract description 11
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims abstract description 6
- 239000007924 injection Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 113
- 239000007789 gas Substances 0.000 claims description 65
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 38
- 229910052786 argon Inorganic materials 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 description 71
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 68
- 238000010438 heat treatment Methods 0.000 description 22
- 239000007788 liquid Substances 0.000 description 13
- 230000008018 melting Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 238000010926 purge Methods 0.000 description 12
- 230000001276 controlling effect Effects 0.000 description 11
- 239000011344 liquid material Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- -1 lithium Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000003570 air Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WMFOQBRAJBCJND-UHFFFAOYSA-M lithium hydroxide Inorganic materials [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0064—Feeding of liquid into an evaporator
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/20—Arrangement of controlling, monitoring, alarm or like devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0028—Regulation
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- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- アルカリ金属又はアルカリ土類金属を含む材料の蒸発及び前記材料の基板上への堆積のための堆積アレンジメントであって、
前記材料を液化するように構成される第1のチャンバであって、前記第1のチャンバが、前記第1のチャンバ内のガスの注入のために構成されるガス注入口を備える、第1のチャンバ、
前記液化された材料を気化するように構成される蒸発ゾーン、
前記第1のチャンバと前記液化された材料のための前記蒸発ゾーンとの間に流体連通を設けるラインであって、前記ラインが、前記ラインの流れ抵抗を画定する第1の部分を含む、ライン、
前記流れ抵抗を有する前記ラインを通る前記液化された材料の流量を制御するため、前記第1のチャンバ内の前記ガスの流量を制御するように構成されるバルブ、及び
前記気化した材料を前記基板に向けて方向付けるための1つ又は複数の排出口
を備える堆積アレンジメント。 - 前記第1の部分が、特に前記堆積アレンジメントの操作の間に変更することができない断面積を有する、請求項1に記載のアレンジメント。
- 前記バルブに接続されているコントローラを更に備え、前記コントローラが、前記第1のチャンバ内の前記ガスの前記流量を調整するため、前記バルブを制御するように構成される、請求項1又は2に記載のアレンジメント。
- 前記バルブに接続されているコントローラを更に備え、前記コントローラが、前記基板上への前記蒸気の堆積速度を制御するため、前記第1のチャンバ内の前記ガスの前記流量を調整するように構成される、請求項1又は2に記載のアレンジメント。
- 前記コントローラが、比例‐積分‐微分コントローラである、請求項3又は4に記載のアレンジメント。
- 前記コントローラが、堆積速度モニターシステムの信号を受信するように構成される信号入力を備える、請求項3から5のいずれか一項に記載のアレンジメント。
- 前記第1のチャンバが、圧力ゲージを更に備える、請求項1から6のいずれか一項に記載のアレンジメント。
- 前記第1の部分が、オリフィスを備える、請求項1から7のいずれか一項に記載のアレンジメント。
- 前記オリフィスが、0.01から0.5mm、0.01から0.1mm、及び特に0.05mmの最小径を有する、請求項8に記載のアレンジメント。
- 前記ガスがアルゴンである、請求項1から9のいずれか一項に記載のアレンジメント。
- 前記1つ又は複数の排出口を備える蒸気供給シャワーヘッドを更に備え、特に前記蒸気供給シャワーヘッドが、直線的な蒸気供給シャワーヘッドである、請求項1から10のいずれか一項に記載のアレンジメント。
- 少なくとも前記第1のチャンバ及び前記バルブを収容するための筐体を更に備え、前記筐体が、保護雰囲気下での前記第1のチャンバの交換のために構成される、請求項1から11のいずれか一項に記載のアレンジメント。
- アルカリ金属又はアルカリ土類金属を含む材料の蒸発及び前記材料の基板上への堆積のための堆積装置であって、
前記材料を前記基板上に堆積するための真空チャンバ、及び
請求項1から12のいずれか一項に記載のアレンジメント
を備える堆積装置。 - アルカリ金属又はアルカリ土類金属を含む材料を蒸発させる方法であって、
前記材料を第1のチャンバ内で液化すること、
前記液化された材料を前記第1のチャンバからラインを通して蒸発ゾーンまで誘導することであって、前記ラインが、前記ラインの流れ抵抗を画定する第1の部分を含む、誘導すること、
前記流れ抵抗を有する前記ラインを通る前記液化された材料の流量を制御するため、前記第1のチャンバ内のガスの流量を制御すること、
前記材料を前記蒸発ゾーン内で蒸発させること、及び
前記材料の前記蒸気を基板上に方向付けること
を含む方法。 - 前記ラインを通る前記液化された材料の前記流量を調整するための前記バルブの制御のためのクローズドループ制御を更に含む、請求項14に記載の方法。
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PCT/EP2013/075850 WO2015082022A1 (en) | 2013-12-06 | 2013-12-06 | Depositing arrangement, deposition apparatus and methods of operation thereof |
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JP2016540892A true JP2016540892A (ja) | 2016-12-28 |
JP2016540892A5 JP2016540892A5 (ja) | 2017-02-09 |
JP6647202B2 JP6647202B2 (ja) | 2020-02-14 |
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Country Status (7)
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US (1) | US20170022598A1 (ja) |
EP (1) | EP3077567B1 (ja) |
JP (1) | JP6647202B2 (ja) |
KR (1) | KR102137181B1 (ja) |
CN (2) | CN105874095A (ja) |
TW (1) | TWI652363B (ja) |
WO (1) | WO2015082022A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2018103137A (ja) * | 2016-12-28 | 2018-07-05 | セイコーエプソン株式会社 | 液体吐出装置、方法およびコンピュータープログラム |
WO2019201434A1 (en) * | 2018-04-18 | 2019-10-24 | Applied Materials, Inc. | Evaporation source for deposition of evaporated material on a substrate, deposition apparatus, method for measuring a vapor pressure of evaporated material, and method for determining an evaporation rate of an evaporated material |
US20200189874A1 (en) * | 2018-12-12 | 2020-06-18 | Applied Materials, Inc. | Free-span coating systems and methods |
WO2020251696A1 (en) | 2019-06-10 | 2020-12-17 | Applied Materials, Inc. | Processing system for forming layers |
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JP6647202B2 (ja) | 2020-02-14 |
KR20160095091A (ko) | 2016-08-10 |
EP3077567B1 (en) | 2021-02-24 |
TW201522681A (zh) | 2015-06-16 |
KR102137181B1 (ko) | 2020-08-13 |
EP3077567A1 (en) | 2016-10-12 |
CN111441015A (zh) | 2020-07-24 |
TWI652363B (zh) | 2019-03-01 |
CN105874095A (zh) | 2016-08-17 |
US20170022598A1 (en) | 2017-01-26 |
WO2015082022A1 (en) | 2015-06-11 |
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