FR2984923B1 - Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes - Google Patents
Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexesInfo
- Publication number
- FR2984923B1 FR2984923B1 FR1162463A FR1162463A FR2984923B1 FR 2984923 B1 FR2984923 B1 FR 2984923B1 FR 1162463 A FR1162463 A FR 1162463A FR 1162463 A FR1162463 A FR 1162463A FR 2984923 B1 FR2984923 B1 FR 2984923B1
- Authority
- FR
- France
- Prior art keywords
- realizing
- related methods
- reaction chambers
- deposition systems
- situ metrology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1162463A FR2984923B1 (fr) | 2011-12-27 | 2011-12-27 | Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes |
TW101141375A TWI570285B (zh) | 2011-12-15 | 2012-11-07 | 具有被組構成可原地計量之反應腔之沉積系統及相關方法 |
KR1020147017180A KR20140103291A (ko) | 2011-12-15 | 2012-11-12 | 인 시투 계측을 위해 구성된 반응 체임버를 가지는 침착 시스템 및 관련 방법 |
JP2014546661A JP6133888B2 (ja) | 2011-12-15 | 2012-11-12 | その場でのメトロロジ用に構成された反応チャンバを有する堆積システムおよび関連の方法 |
DE112012005276.5T DE112012005276T5 (de) | 2011-12-15 | 2012-11-12 | Abscheidungssysteme mit Reaktionskammern, die zur In-Situ Metrologie ausgebildet sind, und verwandte Verfahren |
PCT/IB2012/002388 WO2013088213A1 (fr) | 2011-12-15 | 2012-11-12 | Système de dépôt ayant une chambre de réaction configurée pour la métrologie in situ et procédé associé |
CN201280061724.6A CN103987877B (zh) | 2011-12-15 | 2012-11-12 | 具有为原位方法配置的反应室的淀积系统以及相关方法 |
SG11201402877YA SG11201402877YA (en) | 2011-12-15 | 2012-11-12 | Deposition system having a reaction chamber configured for in situ metrology and related method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1162463A FR2984923B1 (fr) | 2011-12-27 | 2011-12-27 | Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2984923A1 FR2984923A1 (fr) | 2013-06-28 |
FR2984923B1 true FR2984923B1 (fr) | 2014-11-07 |
Family
ID=45815784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1162463A Expired - Fee Related FR2984923B1 (fr) | 2011-12-15 | 2011-12-27 | Systèmes de dépôt comprenant des chambres de réaction configurées pour réaliser des opérations de métrologie in situ et procédés connexes |
Country Status (8)
Country | Link |
---|---|
JP (1) | JP6133888B2 (fr) |
KR (1) | KR20140103291A (fr) |
CN (1) | CN103987877B (fr) |
DE (1) | DE112012005276T5 (fr) |
FR (1) | FR2984923B1 (fr) |
SG (1) | SG11201402877YA (fr) |
TW (1) | TWI570285B (fr) |
WO (1) | WO2013088213A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812342B2 (en) * | 2015-12-08 | 2017-11-07 | Watlow Electric Manufacturing Company | Reduced wire count heater array block |
US11823964B2 (en) * | 2021-04-16 | 2023-11-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01268120A (ja) * | 1988-04-20 | 1989-10-25 | Fujitsu Ltd | 半導体装置用ウェハの温度測定方法 |
GB2238868A (en) * | 1989-11-22 | 1991-06-12 | Res Corp Technologies Inc | Silicon wafer temperature measurement by optical transmission monitoring. |
JP3058658B2 (ja) * | 1990-06-21 | 2000-07-04 | 国際電気株式会社 | 半導体製造装置 |
JPH062147A (ja) * | 1992-06-16 | 1994-01-11 | Babcock Hitachi Kk | 気相化学反応装置 |
JP2884556B2 (ja) * | 1994-06-10 | 1999-04-19 | 信越石英株式会社 | 枚葉式ウェーハ熱処理装置 |
JPH0897167A (ja) * | 1994-09-28 | 1996-04-12 | Tokyo Electron Ltd | 処理装置及び熱処理装置 |
JP3011866B2 (ja) * | 1994-11-30 | 2000-02-21 | 信越石英株式会社 | 枚葉式ウエーハ熱処理装置 |
JP3218164B2 (ja) * | 1995-05-31 | 2001-10-15 | 東京エレクトロン株式会社 | 被処理体の支持ボート、熱処理装置及び熱処理方法 |
JP3551609B2 (ja) * | 1996-02-23 | 2004-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
WO1999049101A1 (fr) * | 1998-03-23 | 1999-09-30 | Mattson Technology, Inc. | Appareil et procede de depot chimique en phase vapeur et de traitement thermique de substrats a semiconducteurs |
US6179913B1 (en) | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
JPWO2005017988A1 (ja) * | 2003-08-15 | 2006-10-12 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
JP2007005399A (ja) * | 2005-06-21 | 2007-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR101330156B1 (ko) * | 2006-11-22 | 2013-12-20 | 소이텍 | 삼염화 갈륨 주입 구조 |
WO2008064077A2 (fr) | 2006-11-22 | 2008-05-29 | S.O.I.Tec Silicon On Insulator Technologies | Procédé de fabrication en grand volume de matériaux semiconducteurs des groupes iii à v |
KR20100106608A (ko) * | 2008-01-31 | 2010-10-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 회로 mocvd 증착 제어 |
US8388755B2 (en) * | 2008-02-27 | 2013-03-05 | Soitec | Thermalization of gaseous precursors in CVD reactors |
JP5314134B2 (ja) * | 2008-06-30 | 2013-10-16 | ソイテック | モジュール式化学気相成長(cvd)反応器サブシステム及びその形成方法並びに独立機能モジュール |
EP2329056B1 (fr) * | 2008-08-28 | 2012-12-19 | Soitec | Appareil de surveillance basé sur l absorption uv et commande d un courant de gaz de chlorure |
-
2011
- 2011-12-27 FR FR1162463A patent/FR2984923B1/fr not_active Expired - Fee Related
-
2012
- 2012-11-07 TW TW101141375A patent/TWI570285B/zh not_active IP Right Cessation
- 2012-11-12 JP JP2014546661A patent/JP6133888B2/ja not_active Expired - Fee Related
- 2012-11-12 DE DE112012005276.5T patent/DE112012005276T5/de not_active Withdrawn
- 2012-11-12 CN CN201280061724.6A patent/CN103987877B/zh not_active Expired - Fee Related
- 2012-11-12 SG SG11201402877YA patent/SG11201402877YA/en unknown
- 2012-11-12 KR KR1020147017180A patent/KR20140103291A/ko not_active Application Discontinuation
- 2012-11-12 WO PCT/IB2012/002388 patent/WO2013088213A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
TW201323670A (zh) | 2013-06-16 |
DE112012005276T5 (de) | 2014-10-09 |
KR20140103291A (ko) | 2014-08-26 |
JP6133888B2 (ja) | 2017-05-24 |
CN103987877B (zh) | 2016-08-17 |
CN103987877A (zh) | 2014-08-13 |
FR2984923A1 (fr) | 2013-06-28 |
WO2013088213A1 (fr) | 2013-06-20 |
TWI570285B (zh) | 2017-02-11 |
JP2015502055A (ja) | 2015-01-19 |
SG11201402877YA (en) | 2014-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
ST | Notification of lapse |
Effective date: 20190906 |