JP2022517361A - 光学積層体の堆積及び装置内計測 - Google Patents
光学積層体の堆積及び装置内計測 Download PDFInfo
- Publication number
- JP2022517361A JP2022517361A JP2021540547A JP2021540547A JP2022517361A JP 2022517361 A JP2022517361 A JP 2022517361A JP 2021540547 A JP2021540547 A JP 2021540547A JP 2021540547 A JP2021540547 A JP 2021540547A JP 2022517361 A JP2022517361 A JP 2022517361A
- Authority
- JP
- Japan
- Prior art keywords
- transfer chamber
- chamber
- processing
- layer
- measuring unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 63
- 230000008021 deposition Effects 0.000 title claims description 11
- 238000005259 measurement Methods 0.000 title description 10
- 238000012545 processing Methods 0.000 claims abstract description 120
- 238000012546 transfer Methods 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 238000012937 correction Methods 0.000 claims description 9
- 238000000985 reflectance spectrum Methods 0.000 claims description 9
- 238000000411 transmission spectrum Methods 0.000 claims description 9
- 238000000862 absorption spectrum Methods 0.000 claims description 8
- 230000031700 light absorption Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000001010 compromised effect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/26—Pc applications
- G05B2219/2602—Wafer processing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Automation & Control Theory (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
[0001]本開示の実施形態は概して、処理ツール内で光学積層体の層を堆積させ、測定することに関する。
[0002]処理ツールは、光学積層体を形成するために基板上に材料(誘電体層や膜など)を堆積させるのに使用される、様々な堆積チャンバを含みうる。光学積層体を形成する場合、一般に、膜は可能な限り均一かつ精密に堆積される。膜が均一かつ精密に堆積されたかどうかを判定するために、積層体は、堆積チャンバから取り出されて外部計測法を使用して測定される。しかし、外部計測アセンブリを利用することで、膜が空気に曝露され、膜の特性に望ましくない変化が生じる。膜の特性が変化することにより、様々なエラー又は不具合(膜の表面若しくは界面が劣化するか、又は不規則になるなど)が生じうる。更に、膜を測定するために処理ツール環境から積層体を取り出すことには時間がかかることがあり、これにより、生産時間が短くなり、スループットが低下する。
Claims (15)
- 処理ツールであって、
第1移送チャンバと、
前記第1移送チャンバに連結された第2移送チャンバであって、前記第1移送チャンバ又は前記第2移送チャンバに一又は複数の処理チャンバが連結されている、第2移送チャンバと、
前記第1移送チャンバと前記第2移送チャンバとの間に配置された搭載型計測ユニットとを備え、
前記第1移送チャンバ、前記第2移送チャンバ、及び前記搭載型計測ユニットは閉鎖環境内に配置されている、
処理ツール。 - 前記搭載型計測ユニットがリフレクトメータとエリプソメータのうちの一又は複数を含む、請求項1に記載の処理ツール。
- 前記搭載型計測ユニットが、光学積層体の層のうちの一又は複数の、一又は複数の光学特性を測定するよう構成されており、前記一又は複数の光学特性が、厚さ、光反射率スペクトル、光透過率スペクトル、光吸収スペクトル、屈折率、識別係数、組成、ウエハの反り、及び応力、からなる群から選択される、請求項1に記載の処理ツール。
- 前記第1移送チャンバ又は前記第2移送チャンバに連結された前記一又は複数の処理チャンバのうちの、少なくとも1つの処理チャンバが、化学気相堆積チャンバである、請求項1に記載の処理ツール。
- 前記第1移送チャンバ又は前記第2移送チャンバに連結された前記第1の一又は複数の処理チャンバのうちの、少なくとも1つの処理チャンバが、物理的気相堆積チャンバである、請求項1に記載の処理ツール。
- 光学積層体を形成する方法であって、
第1処理チャンバ内で基板上に第1の層を堆積させることと、
搭載型計測ユニットを使用して、前記第1の層の一又は複数の特性を測定することと、
後続の層における修正のために、前記第1の層の一又は複数のエラーを特定することと、
第2処理チャンバ内で前記第1の層上に第2の層を堆積させることと、
前記搭載型計測ユニットを使用して、前記第2の層の一又は複数の特性を測定することとを含み、
前記第1処理チャンバ、前記第2処理チャンバ、及び前記搭載型計測ユニットが閉鎖環境内に配置されている、
方法。 - 前記搭載型計測ユニットがリフレクトメータとエリプソメータのうちの一又は複数を含む、請求項6に記載の方法。
- 前記一又は複数の特性が、厚さ、光反射率スペクトル、光透過率スペクトル、光吸収スペクトル、屈折率、識別係数、組成、ウエハの反り、及び応力、からなる群から選択される、請求項6に記載の方法。
- 前記第1の層の材料が、前記第2の層の材料とは異なる屈折率を有する、請求項6に記載の方法。
- 前記第1処理チャンバ又は前記第2処理チャンバ内で、前記第2の層の上に一又は複数の追加の層を堆積させることを更に含み、
追加の層が堆積されるたびに、前記追加の層の一又は複数の特性が前記搭載型計測ユニットを使用して測定され、前記追加の層の一又は複数のエラーが、後続の追加の層における修正のために特定される、請求項6に記載の方法。 - 後続の層における修正のために、前記第2の層の一又は複数のエラーを特定することと、
第3処理チャンバ内で前記第2の層上に第3の層を堆積させることと、
前記搭載型計測ユニットを使用して、前記第3の層の一又は複数の特性を測定することとを更に含む、請求項6に記載の方法。 - 処理ツールであって、
一又は複数の前面開口型統一ポッドに連結されたファクトリインターフェースと、
前記ファクトリインターフェースに連結された第1移送チャンバであって、ロボットアームの第1のセットを備える第1移送チャンバと、
前記第1移送チャンバに連結された第2移送チャンバであって、ロボットアームの第2セットを備える第2移送チャンバと、
前記第1移送チャンバ又は前記第2移送チャンバに連結された複数のチャンバであって、第1の複数の処理チャンバ及び複数のサポートチャンバを含む複数のチャンバと、
前記第1移送チャンバと前記第2移送チャンバとの間に配置された搭載型計測ユニットとを備え、
前記第1移送チャンバ、前記第2移送チャンバ、及び前記搭載型計測ユニットは真空環境内に配置されている、
処理ツール。 - 前記搭載型計測ユニットがリフレクトメータとエリプソメータのうちの一又は複数を含む、請求項12に記載の処理ツール。
- 前記搭載型計測ユニットが、光学積層体の一又は複数の層の一又は複数の光学特性を測定するよう構成されており、前記一又は複数の光学特性が、厚さ、光反射率スペクトル、光透過率スペクトル、光吸収スペクトル、屈折率、識別係数、組成、ウエハの反り、及び応力、からなる群から選択される、請求項12に記載の処理ツール。
- 前記第1の複数の処理チャンバ若しくは第2の複数の処理チャンバのうちの、少なくとも1つの処理チャンバが、物理的気相堆積チャンバであるか、又は
前記第1の複数の処理チャンバ若しくは前記第2の複数の処理チャンバのうちの、少なくとも1つの処理チャンバが、化学気相堆積チャンバである、請求項12に記載の処理ツール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024028729A JP2024075581A (ja) | 2019-01-16 | 2024-02-28 | 光学積層体の堆積及び装置内計測 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/249,653 US10886155B2 (en) | 2019-01-16 | 2019-01-16 | Optical stack deposition and on-board metrology |
US16/249,653 | 2019-01-16 | ||
PCT/US2019/058712 WO2020149916A1 (en) | 2019-01-16 | 2019-10-30 | Optical stack deposition and on-board metrology |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024028729A Division JP2024075581A (ja) | 2019-01-16 | 2024-02-28 | 光学積層体の堆積及び装置内計測 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022517361A true JP2022517361A (ja) | 2022-03-08 |
JP7447126B2 JP7447126B2 (ja) | 2024-03-11 |
Family
ID=71516401
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021540547A Active JP7447126B2 (ja) | 2019-01-16 | 2019-10-30 | 光学積層体の堆積及び装置内計測 |
JP2024028729A Pending JP2024075581A (ja) | 2019-01-16 | 2024-02-28 | 光学積層体の堆積及び装置内計測 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024028729A Pending JP2024075581A (ja) | 2019-01-16 | 2024-02-28 | 光学積層体の堆積及び装置内計測 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10886155B2 (ja) |
EP (1) | EP3912186A4 (ja) |
JP (2) | JP7447126B2 (ja) |
KR (1) | KR20210100760A (ja) |
CN (1) | CN113330544A (ja) |
TW (1) | TWI844584B (ja) |
WO (1) | WO2020149916A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7433449B2 (ja) | 2020-01-22 | 2024-02-19 | アプライド マテリアルズ インコーポレイテッド | Oled層の厚さ及びドーパント濃度のインライン監視 |
US11856833B2 (en) * | 2020-01-22 | 2023-12-26 | Applied Materials, Inc. | In-line monitoring of OLED layer thickness and dopant concentration |
CN211879343U (zh) * | 2020-04-10 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
US11688616B2 (en) | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
CN112458440B (zh) * | 2020-11-18 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其反应腔室和膜层沉积方法 |
US20220165593A1 (en) * | 2020-11-24 | 2022-05-26 | Applied Materials, Inc. | Feedforward control of multi-layer stacks during device fabrication |
US20220310425A1 (en) * | 2021-03-29 | 2022-09-29 | Applied Materials, Inc. | Spatial pattern loading measurement with imaging metrology |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005322612A (ja) * | 2004-04-08 | 2005-11-17 | Tohoku Pioneer Corp | 有機el素子の製造方法及び製造装置 |
US20060246683A1 (en) * | 2002-06-11 | 2006-11-02 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
JP2007107093A (ja) * | 2005-08-31 | 2007-04-26 | Applied Materials Inc | 大面積基板処理チャンバを監視及び制御するための総合計測ツール |
JP2007273363A (ja) * | 2006-03-31 | 2007-10-18 | Horiba Ltd | 有機el素子の製造方法及び製造装置 |
JP2011514660A (ja) * | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
JP2017005242A (ja) * | 2015-04-23 | 2017-01-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体処理システムにおける外部基板回転 |
JP2018503119A (ja) * | 2014-12-19 | 2018-02-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積のモニタリングシステム及びその操作方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6558509B2 (en) * | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
DE10134756A1 (de) | 2001-07-17 | 2003-04-03 | Advanced Micro Devices Inc | Ein System und Verfahren zur gesteuerten Strukturierung auf Waferbasis von Strukturelementen mit kritischen Dimensionen |
IL144806A (en) * | 2001-08-08 | 2005-11-20 | Nova Measuring Instr Ltd | Method and apparatus for process control in semiconductor manufacturing |
WO2003026001A2 (en) * | 2001-09-18 | 2003-03-27 | Applied Materials, Inc. | Integrated equipment set for forming an interconnect on a substrate |
US6642066B1 (en) | 2002-05-15 | 2003-11-04 | Advanced Micro Devices, Inc. | Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer |
US6699380B1 (en) * | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
US10086511B2 (en) | 2003-11-10 | 2018-10-02 | Brooks Automation, Inc. | Semiconductor manufacturing systems |
US7019835B2 (en) * | 2004-02-19 | 2006-03-28 | Molecular Imprints, Inc. | Method and system to measure characteristics of a film disposed on a substrate |
US20070196011A1 (en) * | 2004-11-22 | 2007-08-23 | Cox Damon K | Integrated vacuum metrology for cluster tool |
US20070134821A1 (en) * | 2004-11-22 | 2007-06-14 | Randhir Thakur | Cluster tool for advanced front-end processing |
US9099506B2 (en) * | 2005-03-30 | 2015-08-04 | Brooks Automation, Inc. | Transfer chamber between workstations |
US20070012337A1 (en) * | 2005-07-15 | 2007-01-18 | Tokyo Electron Limited | In-line metrology for supercritical fluid processing |
US7695232B2 (en) * | 2006-06-15 | 2010-04-13 | Applied Materials, Inc. | Multi-level load lock chamber, transfer chamber, and robot suitable for interfacing with same |
US20080233269A1 (en) * | 2007-03-20 | 2008-09-25 | Tokyo Electron Limited | Apparatus and methods for applying a layer of a spin-on material on a series of substrates |
JP2010524201A (ja) * | 2007-03-22 | 2010-07-15 | クロッシング オートメイション, インコーポレイテッド | モジュラクラスタツール |
JP5107285B2 (ja) | 2009-03-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 |
US9076827B2 (en) * | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
KR101867385B1 (ko) * | 2010-10-15 | 2018-06-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 광학 모니터링을 위한 스펙트럼들의 라이브러리 구축 |
US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
US8942842B2 (en) * | 2011-04-28 | 2015-01-27 | Applied Materials, Inc. | Varying optical coefficients to generate spectra for polishing control |
US20120278028A1 (en) * | 2011-04-28 | 2012-11-01 | Jeffrey Drue David | Generating model based spectra library for polishing |
US8980651B2 (en) * | 2011-09-30 | 2015-03-17 | Tokyo Electron Limited | Overlay measurement for a double patterning |
US9431267B2 (en) * | 2012-12-03 | 2016-08-30 | Applied Materials, Inc. | Semiconductor device processing tools and methods for patterning substrates |
US20140242880A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials, Inc. | Optical model with polarization direction effects for comparison to measured spectrum |
US20140242881A1 (en) * | 2013-02-27 | 2014-08-28 | Applied Materials, Inc. | Feed forward parameter values for use in theoretically generating spectra |
US8808059B1 (en) * | 2013-02-27 | 2014-08-19 | Applied Materials, Inc. | Spectraphic monitoring based on pre-screening of theoretical library |
KR20160108555A (ko) * | 2014-01-21 | 2016-09-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 임의의 기판 상의 막 두께의 측정 |
US11378426B2 (en) * | 2014-06-20 | 2022-07-05 | Applied Materials, Inc. | System and method for monitoring sensor linearity as part of a production process |
US9673071B2 (en) | 2014-10-23 | 2017-06-06 | Lam Research Corporation | Buffer station for thermal control of semiconductor substrates transferred therethrough and method of transferring semiconductor substrates |
CN108292589B (zh) | 2015-11-23 | 2023-05-16 | 应用材料公司 | 在处理工具中的板载计量(obm)设计与影响 |
US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
WO2019182913A1 (en) * | 2018-03-20 | 2019-09-26 | Tokyo Electron Limited | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
-
2019
- 2019-01-16 US US16/249,653 patent/US10886155B2/en active Active
- 2019-10-30 WO PCT/US2019/058712 patent/WO2020149916A1/en unknown
- 2019-10-30 EP EP19910665.9A patent/EP3912186A4/en active Pending
- 2019-10-30 CN CN201980088226.2A patent/CN113330544A/zh active Pending
- 2019-10-30 KR KR1020217025180A patent/KR20210100760A/ko active IP Right Grant
- 2019-10-30 JP JP2021540547A patent/JP7447126B2/ja active Active
- 2019-11-21 TW TW108142297A patent/TWI844584B/zh active
-
2024
- 2024-02-28 JP JP2024028729A patent/JP2024075581A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060246683A1 (en) * | 2002-06-11 | 2006-11-02 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
JP2005322612A (ja) * | 2004-04-08 | 2005-11-17 | Tohoku Pioneer Corp | 有機el素子の製造方法及び製造装置 |
JP2007107093A (ja) * | 2005-08-31 | 2007-04-26 | Applied Materials Inc | 大面積基板処理チャンバを監視及び制御するための総合計測ツール |
JP2007273363A (ja) * | 2006-03-31 | 2007-10-18 | Horiba Ltd | 有機el素子の製造方法及び製造装置 |
JP2011514660A (ja) * | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
JP2018503119A (ja) * | 2014-12-19 | 2018-02-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積のモニタリングシステム及びその操作方法 |
JP2017005242A (ja) * | 2015-04-23 | 2017-01-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体処理システムにおける外部基板回転 |
Also Published As
Publication number | Publication date |
---|---|
TWI844584B (zh) | 2024-06-11 |
CN113330544A (zh) | 2021-08-31 |
EP3912186A1 (en) | 2021-11-24 |
EP3912186A4 (en) | 2022-09-21 |
WO2020149916A1 (en) | 2020-07-23 |
US20200227294A1 (en) | 2020-07-16 |
JP2024075581A (ja) | 2024-06-04 |
US10886155B2 (en) | 2021-01-05 |
KR20210100760A (ko) | 2021-08-17 |
TW202030470A (zh) | 2020-08-16 |
JP7447126B2 (ja) | 2024-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2022517361A (ja) | 光学積層体の堆積及び装置内計測 | |
KR102580108B1 (ko) | 통합된 단부-대-단부 영역-선택적 침착 프로세스를 위한 플랫폼 및 동작 방법 | |
US20080044595A1 (en) | Method for semiconductor processing | |
US12093021B2 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | |
US20200105531A1 (en) | Asymmetric wafer bow compensation by physical vapor deposition | |
CN110476225A (zh) | 基板处理方法和存储介质 | |
TW202322217A (zh) | 用於沉積低介電常數膜的方法與設備 | |
US9087864B2 (en) | Multipurpose combinatorial vapor phase deposition chamber | |
KR20110023792A (ko) | 더미 기판의 사용 방법 | |
JP3879093B2 (ja) | コンビナトリアルデバイス作製装置 | |
TW202434873A (zh) | 光學堆疊沉積與機載量測法 | |
JP3222532B2 (ja) | 基板処理装置 | |
JP7200367B2 (ja) | 改善された温度均一性での空間ウエハ処理 | |
CN116472437A (zh) | 在装置制造期间对多层堆叠结构的前馈控制 | |
JP7249407B2 (ja) | 補完的なパターンのステーション設計 | |
US7214552B2 (en) | Eliminating systematic process yield loss via precision wafer placement alignment | |
JP7567057B2 (ja) | 上流プロセス制御のためのエッチングフィードバック | |
WO2021024911A1 (ja) | 太陽電池の製膜方法および太陽電池の製膜システム | |
JPH08304614A (ja) | 合成樹脂製反射鏡、その製造方法および製造装置 | |
TW202407140A (zh) | 用於在基板製造期間調節膜沉積參數的方法和機制 | |
KR20010017679A (ko) | 반도체 소자 제조용 다중 챔버 | |
JP2024007277A (ja) | 成膜位置ズレ補正方法および成膜システム | |
KR20230087431A (ko) | 반도체 프로세싱 시스템에서의 외부 기판 회전 | |
KR20060074578A (ko) | 웨이퍼 두께 측정 장치 및 방법 | |
Buisson | Process Metrology for Ultrathin Gate Dielectrics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210916 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210916 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220915 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221004 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230627 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230926 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240228 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7447126 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |