JP2020095274A - 堆積用監視システム及びその操作方法 - Google Patents
堆積用監視システム及びその操作方法 Download PDFInfo
- Publication number
- JP2020095274A JP2020095274A JP2020010520A JP2020010520A JP2020095274A JP 2020095274 A JP2020095274 A JP 2020095274A JP 2020010520 A JP2020010520 A JP 2020010520A JP 2020010520 A JP2020010520 A JP 2020010520A JP 2020095274 A JP2020095274 A JP 2020095274A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- deposition
- sensor
- sensor assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 46
- 238000012544 monitoring process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 63
- 238000000151 deposition Methods 0.000 claims abstract description 52
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000007689 inspection Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 111
- 230000007547 defect Effects 0.000 description 33
- 238000005137 deposition process Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000000560 X-ray reflectometry Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000012496 blank sample Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011435 rock Substances 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
- 基板を支持するためのプラットフォームと、
基板上に材料層を堆積させるための堆積システムと、
材料層のエラーを検出するためのセンサアセンブリと、
基板上に別の材料層を堆積させるための第2の堆積システムとを含み、
監視システムは、物理蒸着(PVD)、原子層堆積(ALD)、および流動性CVD(FCVD)システム、又はそれらの組み合わせに、インライン又はインサイチューで実施できる統合型極端紫外線リソグラフィマスクブランク製造システム用の監視システム。 - プラットフォームは、静電チャック、回転チャック、又はそれらの組合せを含むことができる、請求項1記載のシステム。
- センサアセンブリは、光反射システム、X線システム、レーザシステム、カメラシステム、又はそれらの組み合わせを含む、請求項1記載のシステム。
- センサアセンブリは、光源及び検出器を含むことができ、光源及び検出器は、材料層の層上面に対して45度の角度で配向されている、請求項1記載のシステム。
- 材料層の堆積後に堆積厚を走査するための検査チャンバを含む、請求項1記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361919776P | 2013-12-22 | 2013-12-22 | |
US61/919,776 | 2013-12-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016541387A Division JP6653255B2 (ja) | 2013-12-22 | 2014-12-19 | 堆積用監視システム及びその操作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020095274A true JP2020095274A (ja) | 2020-06-18 |
JP7116753B2 JP7116753B2 (ja) | 2022-08-10 |
Family
ID=53403780
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016541387A Active JP6653255B2 (ja) | 2013-12-22 | 2014-12-19 | 堆積用監視システム及びその操作方法 |
JP2020010520A Active JP7116753B2 (ja) | 2013-12-22 | 2020-01-27 | 堆積用監視システム及びその操作方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016541387A Active JP6653255B2 (ja) | 2013-12-22 | 2014-12-19 | 堆積用監視システム及びその操作方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160341544A1 (ja) |
JP (2) | JP6653255B2 (ja) |
KR (1) | KR102291659B1 (ja) |
CN (1) | CN105917453B (ja) |
SG (2) | SG10201805222PA (ja) |
TW (1) | TWI647530B (ja) |
WO (1) | WO2015095799A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10111103B2 (en) * | 2016-03-02 | 2018-10-23 | EyeVerify Inc. | Spoof detection using proximity sensors |
US10818564B2 (en) * | 2016-03-11 | 2020-10-27 | Applied Materials, Inc. | Wafer processing tool having a micro sensor |
JP6606448B2 (ja) * | 2016-03-17 | 2019-11-13 | 株式会社Screenホールディングス | 塗膜検査装置、塗膜検査方法および膜・触媒層接合体の製造装置 |
JP6869648B2 (ja) * | 2016-06-07 | 2021-05-12 | 日東電工株式会社 | 多層膜の成膜方法 |
TWI737804B (zh) * | 2017-09-04 | 2021-09-01 | 李亞玲 | Cvd沉膜偏移製程異常之量測與監控方法 |
JP7009230B2 (ja) * | 2018-01-23 | 2022-01-25 | 株式会社日立ビルシステム | 非破壊検査装置及び非破壊検査方法 |
WO2019177861A1 (en) * | 2018-03-10 | 2019-09-19 | Applied Materials, Inc. | Method and apparatus for asymmetric selective physical vapor deposition |
KR102245198B1 (ko) * | 2019-11-28 | 2021-04-27 | 대양전기공업 주식회사 | 레이저 스캐터링을 적용한 센서 제조방법 및 센서 |
US11688616B2 (en) | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
WO2023121494A1 (en) * | 2021-12-22 | 2023-06-29 | Qatar Foundation For Education, Science And Community Development | Automated multi-layer two-dimensional printing |
DE102022205971A1 (de) * | 2022-06-13 | 2023-12-14 | Carl Zeiss Smt Gmbh | Verfahren zum Beschichten eines Spiegelsubstrats mit einer für Nutz- Wellenlängen hochreflektierenden Mehrlagen-Beschichtung sowie Beschichtungsanlage zur Durchführung eines derartigen Verfahrens |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03281780A (ja) * | 1990-03-30 | 1991-12-12 | Hitachi Ltd | Cvd装置 |
JP2002506490A (ja) * | 1998-04-27 | 2002-02-26 | シーブイシー プロダクツ インコーポレイテッド | 複数ターゲットの物理蒸着装置及び方法 |
JP2003512519A (ja) * | 1999-10-20 | 2003-04-02 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置 |
US20050008944A1 (en) * | 2003-07-10 | 2005-01-13 | Francesco Cerrina | Defect inspection of extreme ultraviolet lithography masks and the like |
JP2007107093A (ja) * | 2005-08-31 | 2007-04-26 | Applied Materials Inc | 大面積基板処理チャンバを監視及び制御するための総合計測ツール |
JP2011514660A (ja) * | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
US6215897B1 (en) * | 1998-05-20 | 2001-04-10 | Applied Komatsu Technology, Inc. | Automated substrate processing system |
US6563578B2 (en) * | 2001-04-02 | 2003-05-13 | Advanced Micro Devices, Inc. | In-situ thickness measurement for use in semiconductor processing |
US6781687B2 (en) * | 2002-09-26 | 2004-08-24 | Orbotech Ltd. | Illumination and image acquisition system |
JP3683261B2 (ja) * | 2003-03-03 | 2005-08-17 | Hoya株式会社 | 擬似欠陥を有する反射型マスクブランクス及びその製造方法、擬似欠陥を有する反射型マスク及びその製造方法、並びに擬似欠陥を有する反射型マスクブランクス又は反射型マスクの製造用基板 |
US8257546B2 (en) * | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
US7271921B2 (en) * | 2003-07-23 | 2007-09-18 | Kla-Tencor Technologies Corporation | Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning |
JP3811150B2 (ja) * | 2003-09-05 | 2006-08-16 | 株式会社東芝 | 膜厚測定方法、膜厚測定システム、半導体装置の製造方法及び膜厚測定システム制御プログラム |
TWI299758B (en) * | 2004-03-03 | 2008-08-11 | Sanyo Electric Co | Method and apparatus for measuring the thickness of deposited film, method and apparatus for forming material layer |
JP2005281858A (ja) * | 2004-03-03 | 2005-10-13 | Sanyo Electric Co Ltd | 堆積厚測定方法、材料層の形成方法、堆積厚測定装置および材料層の形成装置 |
JP2005281859A (ja) * | 2004-03-03 | 2005-10-13 | Sanyo Electric Co Ltd | 堆積厚測定方法、材料層の形成方法、堆積厚測定装置および材料層の形成装置 |
US8472020B2 (en) * | 2005-02-15 | 2013-06-25 | Cinram Group, Inc. | Process for enhancing dye polymer recording yields by pre-scanning coated substrate for defects |
JP4979941B2 (ja) * | 2005-03-30 | 2012-07-18 | Hoya株式会社 | マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法 |
JP4990548B2 (ja) * | 2006-04-07 | 2012-08-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
US20070281075A1 (en) * | 2006-05-31 | 2007-12-06 | Cheng-Chia Huang | Optical method to monitor nano thin-film surface structure and thickness thereof |
US8268385B2 (en) * | 2007-05-25 | 2012-09-18 | Southwell William H | Optical monitor with computed compensation |
US8225683B2 (en) * | 2007-09-28 | 2012-07-24 | Lam Research Corporation | Wafer bow metrology arrangements and methods thereof |
CN101398393B (zh) * | 2007-09-28 | 2011-02-02 | 上海华虹Nec电子有限公司 | 硅片制品缺陷分析方法及装置 |
JP4719284B2 (ja) * | 2008-10-10 | 2011-07-06 | トヨタ自動車株式会社 | 表面検査装置 |
KR20100069392A (ko) * | 2008-12-16 | 2010-06-24 | 삼성전자주식회사 | 증착, 식각 혹은 클리닝 공정에서 증착, 식각 혹은 클리닝 종료 시점을 결정하기 위하여 수정 결정 미소저울을 이용하는 반도체 소자의 제조장치 및 이를 이용한 제조방법 |
US20110171758A1 (en) * | 2010-01-08 | 2011-07-14 | Applied Materials, Inc. | Reclamation of scrap materials for led manufacturing |
KR101179269B1 (ko) * | 2010-11-30 | 2012-09-03 | 에스케이하이닉스 주식회사 | 극자외선용 블랭크 마스크 및 그 형성방법 |
TWM485447U (zh) * | 2014-05-30 | 2014-09-01 | G E Products Co Ltd | 具可換式筆頭之觸控筆 |
-
2014
- 2014-12-19 JP JP2016541387A patent/JP6653255B2/ja active Active
- 2014-12-19 KR KR1020167020009A patent/KR102291659B1/ko active IP Right Grant
- 2014-12-19 TW TW103144549A patent/TWI647530B/zh active
- 2014-12-19 SG SG10201805222PA patent/SG10201805222PA/en unknown
- 2014-12-19 CN CN201480073548.7A patent/CN105917453B/zh active Active
- 2014-12-19 SG SG11201604721VA patent/SG11201604721VA/en unknown
- 2014-12-19 WO PCT/US2014/071684 patent/WO2015095799A1/en active Application Filing
- 2014-12-19 US US15/107,062 patent/US20160341544A1/en not_active Abandoned
-
2020
- 2020-01-27 JP JP2020010520A patent/JP7116753B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03281780A (ja) * | 1990-03-30 | 1991-12-12 | Hitachi Ltd | Cvd装置 |
JP2002506490A (ja) * | 1998-04-27 | 2002-02-26 | シーブイシー プロダクツ インコーポレイテッド | 複数ターゲットの物理蒸着装置及び方法 |
JP2003512519A (ja) * | 1999-10-20 | 2003-04-02 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置 |
US20050008944A1 (en) * | 2003-07-10 | 2005-01-13 | Francesco Cerrina | Defect inspection of extreme ultraviolet lithography masks and the like |
JP2007107093A (ja) * | 2005-08-31 | 2007-04-26 | Applied Materials Inc | 大面積基板処理チャンバを監視及び制御するための総合計測ツール |
JP2011514660A (ja) * | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
Also Published As
Publication number | Publication date |
---|---|
KR102291659B1 (ko) | 2021-08-18 |
SG10201805222PA (en) | 2018-08-30 |
JP2017510827A (ja) | 2017-04-13 |
SG11201604721VA (en) | 2016-07-28 |
TW201527870A (zh) | 2015-07-16 |
CN105917453A (zh) | 2016-08-31 |
JP7116753B2 (ja) | 2022-08-10 |
KR20160102511A (ko) | 2016-08-30 |
TWI647530B (zh) | 2019-01-11 |
WO2015095799A1 (en) | 2015-06-25 |
JP6653255B2 (ja) | 2020-02-26 |
CN105917453B (zh) | 2021-10-15 |
US20160341544A1 (en) | 2016-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7116753B2 (ja) | 堆積用監視システム及びその操作方法 | |
KR102190305B1 (ko) | 메트롤로지 방법, 메트롤로지 장치 및 디바이스 제조 방법 | |
US10067074B2 (en) | Metrology methods, metrology apparatus and device manufacturing method | |
TWI603422B (zh) | 使用基板幾何以判定基板分析取樣之方法及裝置 | |
JP4951629B2 (ja) | 検査装置、検査装置を設けたリソグラフィシステム、およびサンプルを検査するための方法 | |
CN107210188B (zh) | 用于沉积的监控系统与操作该系统的方法 | |
JP2017516138A (ja) | メトロロジーに用いられる基板及びパターニングデバイス、メトロロジー方法、及びデバイス製造方法 | |
TWI435182B (zh) | 角度分辨散射計及檢查方法 | |
TWI424281B (zh) | 微影裝置及元件製造方法 | |
JP5443405B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
KR20120031916A (ko) | Euv 마스크 평평함을 평가하기 위한 방법 및 시스템 | |
CN111670412B (zh) | 检测设备和检测方法 | |
CN114895524B (zh) | Euv光掩模体的缺陷检测方法及系统 | |
CN114879447A (zh) | Euv光掩模体的缺陷检测方法及系统 | |
TWI798758B (zh) | 製程偏差判定方法、校準方法、檢測工具、製造系統及樣品 | |
TW201937306A (zh) | 圖案化一半導體裝置之至少一層之方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201110 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210209 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211005 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220729 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7116753 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |