JP2017510827A - 堆積用監視システム及びその操作方法 - Google Patents
堆積用監視システム及びその操作方法 Download PDFInfo
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- JP2017510827A JP2017510827A JP2016541387A JP2016541387A JP2017510827A JP 2017510827 A JP2017510827 A JP 2017510827A JP 2016541387 A JP2016541387 A JP 2016541387A JP 2016541387 A JP2016541387 A JP 2016541387A JP 2017510827 A JP2017510827 A JP 2017510827A
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 72
- 238000000151 deposition Methods 0.000 claims abstract description 71
- 230000007547 defect Effects 0.000 claims description 37
- 238000005137 deposition process Methods 0.000 claims description 18
- 238000007689 inspection Methods 0.000 claims description 12
- 230000003595 spectral effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 110
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000560 X-ray reflectometry Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000012496 blank sample Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011435 rock Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 238000005286 illumination Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001028 reflection method Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 230000000712 assembly Effects 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 監視システムの操作方法であって、
プラットフォーム上に基板を提供する工程と、
基板の走査を実行する工程と、
基板上に材料層を堆積させる工程と、
材料層の堆積厚さを監視する工程と、
堆積厚さのエラーに基づいて警告を生成する工程を含む方法。 - 堆積厚さを監視する工程は、堆積プロセスの間に連続走査を実行する工程を含む、請求項1記載の方法。
- 堆積厚さを監視する工程は、495nm〜570nmの波長で走査する工程を含む、請求項1記載の方法。
- 堆積厚さを監視する工程は、材料層のスペクトルのシグネチャを監視する工程を含む、請求項1記載の方法。
- 材料層上に第2の材料層を堆積させる工程を含み、堆積厚さを監視する工程は、材料層及び第2の材料層の連続走査を含む、請求項1記載の方法。
- 基板を支持するためのプラットフォームと、
基板上に材料層を堆積させるための堆積システムと、
材料層のエラーを検出するためのセンサアセンブリと、
基板上に別の材料層を堆積させるための第2の堆積システムとを含む監視システム。 - プラットフォームは、静電チャック、回転チャック、又はそれらの組合せを含むことができる、請求項6記載のシステム。
- センサアセンブリは、光反射システム、X線システム、レーザシステム、カメラシステム、又はそれらの組み合わせを含む、請求項6記載のシステム。
- センサアセンブリは、光源及び検出器を含むことができ、光源及び検出器は、材料層の層上面に対して45度の角度で配向されている、請求項6記載のシステム。
- 材料層の堆積後に堆積厚を走査するための検査チャンバを含む、請求項6記載のシステム。
- 監視システムの走査方法であって、
回転する静電チャックを含むプラットフォーム上に基板を提供する工程と、
基板の走査を実行する工程と、
基板上に材料層を堆積させる工程と、
材料層の堆積厚さを監視する工程と、
堆積厚さのエラー又は基板内の欠陥に基づいて警告を生成する工程を含む方法。 - 基板の走査を実行する工程は、光反射システム、X線システム、レーザシステム、カメラシステム、又はそれらの組み合わせで走査を実行する工程を含む、請求項11記載の方法。
- 堆積厚さを監視する工程は、基板を検査チャンバに搬送する工程を含む、請求項11記載の方法。
- 堆積厚さを監視する工程は、中心位置とエッジ位置を走査する工程を含む、請求項11記載の方法。
- 堆積厚さを監視する工程は、光反射システムで走査する工程を含む、請求項11記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361919776P | 2013-12-22 | 2013-12-22 | |
US61/919,776 | 2013-12-22 | ||
PCT/US2014/071684 WO2015095799A1 (en) | 2013-12-22 | 2014-12-19 | Monitoring system for deposition and method of operation thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2020010520A Division JP7116753B2 (ja) | 2013-12-22 | 2020-01-27 | 堆積用監視システム及びその操作方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017510827A true JP2017510827A (ja) | 2017-04-13 |
JP6653255B2 JP6653255B2 (ja) | 2020-02-26 |
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JP2016541387A Active JP6653255B2 (ja) | 2013-12-22 | 2014-12-19 | 堆積用監視システム及びその操作方法 |
JP2020010520A Active JP7116753B2 (ja) | 2013-12-22 | 2020-01-27 | 堆積用監視システム及びその操作方法 |
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Country Status (7)
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US (1) | US20160341544A1 (ja) |
JP (2) | JP6653255B2 (ja) |
KR (1) | KR102291659B1 (ja) |
CN (1) | CN105917453B (ja) |
SG (2) | SG10201805222PA (ja) |
TW (1) | TWI647530B (ja) |
WO (1) | WO2015095799A1 (ja) |
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JP2019128204A (ja) * | 2018-01-23 | 2019-08-01 | 株式会社日立ビルシステム | 非破壊検査装置及び非破壊検査方法 |
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US10111103B2 (en) * | 2016-03-02 | 2018-10-23 | EyeVerify Inc. | Spoof detection using proximity sensors |
US10818564B2 (en) * | 2016-03-11 | 2020-10-27 | Applied Materials, Inc. | Wafer processing tool having a micro sensor |
JP6606448B2 (ja) * | 2016-03-17 | 2019-11-13 | 株式会社Screenホールディングス | 塗膜検査装置、塗膜検査方法および膜・触媒層接合体の製造装置 |
JP6869648B2 (ja) * | 2016-06-07 | 2021-05-12 | 日東電工株式会社 | 多層膜の成膜方法 |
TWI737804B (zh) * | 2017-09-04 | 2021-09-01 | 李亞玲 | Cvd沉膜偏移製程異常之量測與監控方法 |
WO2019177861A1 (en) * | 2018-03-10 | 2019-09-19 | Applied Materials, Inc. | Method and apparatus for asymmetric selective physical vapor deposition |
KR102245198B1 (ko) * | 2019-11-28 | 2021-04-27 | 대양전기공업 주식회사 | 레이저 스캐터링을 적용한 센서 제조방법 및 센서 |
US11688616B2 (en) | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
WO2023121494A1 (en) * | 2021-12-22 | 2023-06-29 | Qatar Foundation For Education, Science And Community Development | Automated multi-layer two-dimensional printing |
DE102022205971A1 (de) * | 2022-06-13 | 2023-12-14 | Carl Zeiss Smt Gmbh | Verfahren zum Beschichten eines Spiegelsubstrats mit einer für Nutz- Wellenlängen hochreflektierenden Mehrlagen-Beschichtung sowie Beschichtungsanlage zur Durchführung eines derartigen Verfahrens |
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2014
- 2014-12-19 JP JP2016541387A patent/JP6653255B2/ja active Active
- 2014-12-19 KR KR1020167020009A patent/KR102291659B1/ko active IP Right Grant
- 2014-12-19 TW TW103144549A patent/TWI647530B/zh active
- 2014-12-19 SG SG10201805222PA patent/SG10201805222PA/en unknown
- 2014-12-19 CN CN201480073548.7A patent/CN105917453B/zh active Active
- 2014-12-19 SG SG11201604721VA patent/SG11201604721VA/en unknown
- 2014-12-19 WO PCT/US2014/071684 patent/WO2015095799A1/en active Application Filing
- 2014-12-19 US US15/107,062 patent/US20160341544A1/en not_active Abandoned
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2020
- 2020-01-27 JP JP2020010520A patent/JP7116753B2/ja active Active
Patent Citations (9)
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JP2019128204A (ja) * | 2018-01-23 | 2019-08-01 | 株式会社日立ビルシステム | 非破壊検査装置及び非破壊検査方法 |
JP7009230B2 (ja) | 2018-01-23 | 2022-01-25 | 株式会社日立ビルシステム | 非破壊検査装置及び非破壊検査方法 |
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KR102291659B1 (ko) | 2021-08-18 |
SG10201805222PA (en) | 2018-08-30 |
SG11201604721VA (en) | 2016-07-28 |
TW201527870A (zh) | 2015-07-16 |
CN105917453A (zh) | 2016-08-31 |
JP7116753B2 (ja) | 2022-08-10 |
KR20160102511A (ko) | 2016-08-30 |
TWI647530B (zh) | 2019-01-11 |
WO2015095799A1 (en) | 2015-06-25 |
JP2020095274A (ja) | 2020-06-18 |
JP6653255B2 (ja) | 2020-02-26 |
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US20160341544A1 (en) | 2016-11-24 |
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