JP7348440B2 - 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法 - Google Patents
統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法 Download PDFInfo
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Description
本出願は、2018年3月20日に出願の、「Substrate Processing Tool with Integrated Metrology and Method of Using」という名称の米国仮特許出願第62/645,685号明細書、2019年1月2日に出願の、「Self-Aware and Correcting Heterogeneous Platform incorporating Integrated Semiconductor Processing Modules and Method for using same」という名称の米国仮特許出願第62/787,607号明細書、2019年1月2日に出願の、「Self-Aware and Correcting Heterogeneous Platform incorporating Integrated Semiconductor Processing Modules and Method for using same」という名称の米国仮特許出願第62/787,608号明細書、及び2019年1月4日に出願の、「Substrate Processing Tool with Integrated Metrology and Method of using」という名称の米国仮特許出願第62/788,195号明細書の利益を主張するものであり、これらは参照により全体が本明細書に組み込まれる。
本明細書に記載されるように、能動的阻止制御システムは、ワークピースの測定データに一部基づいて補正処理を実施するように構成されている。1つ以上の処理モジュールの処理パラメータ又は設定を反映したプロセスパラメータデータなどの他のデータも、共通の製造プラットフォームのプラットフォーム性能データと同様に、能動的阻止制御システムに入力してよい。データは、ワークピースの不適合及び欠陥を判定して、能動的阻止中にプラットフォーム内で実施されるべき補正処理の経路を決定するために、能動的阻止制御システムによって処理される。上述したように、不適合が検出された場合、補正処理は、プロセスシーケンスの上流又は下流の処理モジュールで実施されてもよい。能動的阻止制御システムは、様々な測定モジュール及びプラットフォームのTMMと結合されており、プロセスシーケンスにおけるワークピースの移動及び処理を制御するために、測定データ及び他のデータを処理する。
ここで図面を参照して本発明を記載する。なお、全体を通して同じ要素を指すために同じ参照番号を使用している。以下の記載では、本発明の完全な理解をもたらすために、説明の目的で、多くの具体的な詳細が示されている。しかしながら、これらの具体的な詳細がなくても、本発明を実行できることは明らかであり得る。他の例では、本発明の説明を容易にするために、周知の構造とデバイスとが、ブロック図の形で示されている。
Claims (44)
- 処理システムを使用して、ワークピースを処理して前記ワークピース上に電子デバイスを製作するための製造プラットフォームであって、前記製造プラットフォームは、
共通の製造プラットフォーム上にホストされた複数の処理モジュールであって、前記処理モジュールは、処理シーケンスの一部としての処理工程内で、ワークピース上の材料を操作するように構成されており、前記複数の処理モジュールは第1モジュール及び第2モジュールを含み、前記第1モジュール及び前記第2モジュールは、プロセスシーケンス内の異なるプロセスを容易にする、複数の処理モジュールと、
前記共通の製造プラットフォーム上にホストされた少なくとも1つの測定モジュールであって、前記測定モジュールは、前記ワークピースが前記共通の製造プラットフォームの処理モジュール内で処理される前又は後の少なくとも一方に、前記ワークピースの属性に関連するデータを測定するように動作可能な検査システムを含む、少なくとも1つの測定モジュールと、
前記共通の製造プラットフォーム上にホストされ、前記処理モジュールと前記少なくとも1つの測定モジュールとの間で前記ワークピースを移動させるように構成されている少なくとも1つのワークピース搬送モジュールと、
前記共通の製造プラットフォーム上に少なくとも部分的にホストされ、前記測定モジュールと結合された能動的阻止制御システムであって、前記能動的阻止制御システムは、不適合を検出するために、前記ワークピースの属性に関連する前記測定の測定データを処理するように構成されており、不適合が検出された場合に、少なくとも部分的に、前記プロセスシーケンスの上流及び/又は下流の処理モジュール内で前記ワークピースの補正処理を実施するように構成されており、
前記能動的阻止制御システムは、更に、前記処理シーケンスにおける前記ワークピースの移動及び処理を制御するように構成されている、能動的阻止制御システムと、
を含む、能動的阻止制御システムと、を含み、
前記共通の製造プラットフォーム、前記処理モジュール、及び前記測定モジュールは、制御された環境内で動作し、前記ワークピース搬送モジュールは、前記制御された環境を離れることなく、前記処理シーケンス内の前記複数の処理モジュールと前記測定モジュールとの間で前記ワークピースを搬送するように構成されている、
製造プラットフォーム。 - 前記第1モジュールは膜形成モジュールであり、前記第2モジュールはエッチングモジュールである、請求項1に記載の製造プラットフォーム。
- 前記能動的阻止制御システムは、前記測定データからデータパターンを抽出して分類し、不適合の存在を予測するためのパターン認識コンポーネントを含む、請求項1に記載の製造プラットフォーム。
- 前記パターン認識コンポーネントは、深層学習アーキテクチャを含む、請求項3に記載の製造プラットフォーム。
- 前記パターン認識コンポーネントは、抽出したデータパターンを前記ワークピースの学習した属性と相関させる、請求項4に記載の製造プラットフォーム。
- 前記学習した属性は、前記ワークピースの欠陥を含む、請求項5に記載の製造プラットフォーム。
- 前記欠陥は、属性の許容範囲外条件を含み、前記属性は、厚さ、クリティカルディメンション、表面粗さ、膜若しくは表面組成、フィーチャプロファイル、パターンエッジ配置、ボイド、選択性の喪失、不均一性の程度、又はローディング効果、又はこれらの2つ以上のいずれかの組み合わせを含む、請求項6に記載の製造プラットフォーム。
- 前記能動的阻止制御システムは、前記不適合が存在する前記ワークピースの領域を示すためのディスプレイコンポーネントを更に含む、請求項1に記載の製造プラットフォーム。
- 前記能動的阻止制御システムは、前記ワークピース上の2つ以上の位置で測定されたデータの相関に基づいて不適合の存在を予測するための相関コンポーネントを含む、請求項1に記載の製造プラットフォーム。
- 前記能動的阻止制御システムは、自律学習コンポーネントを含み、前記自律学習コンポーネントは、前記測定データを受け取り、(i)前記測定データ及び前記プロセスシーケンスの性能を特徴付けること、及び(ii)不適合が存在する場合に前記プロセスシーケンスを補正するためのアクションプランを決定すること、に少なくとも部分的に基づいて知識を生成する、請求項1に記載の製造プラットフォーム。
- 前記自律学習コンポーネントは、教師あり学習、クラスタリング、次元削減、構造化予測、異常検知、若しくは強化学習のうちの少なくとも1つ、又はこれらの2つ以上のいずれかの組み合わせを実行する、請求項10に記載の製造プラットフォーム。
- 前記能動的阻止制御システムは、
前記測定データを受け取る相互作用コンポーネントであって、前記相互作用コンポーネントは、前記測定データをパッケージし、パッケージされたデータを伝達するアダプタコンポーネントを含む、相互作用コンポーネントと、
前記パッケージされたデータを受け取り、前記パッケージされたデータ及び前記プロセスシーケンスの性能を特徴付ける知識を生成する自律学習コンポーネントと、
を含む、請求項1に記載の製造プラットフォーム。 - 前記自律学習コンポーネントは、
前記パッケージされたデータを処理する処理プラットフォームであって、前記処理プラットフォームは、前記パッケージされたデータ上で動作する一連の機能ユニットを含み、前記一連の機能ユニットは、
前記パッケージされたデータを分析し、前記プロセスシーケンスのプロセス目標に少なくとも部分的に基づいて、実施すべきアクションを推論する適応的推論エンジンと、
データ又はコンテキスト変化のうちの1つに少なくとも部分的に基づいて前記プロセス目標を進化させる目標コンポーネントと、
前記知識を記憶するメモリプラットフォームであって、前記メモリプラットフォームは、長期メモリ、短期メモリ、及びエピソードメモリを含むメモリの階層を含み、前記長期メモリは、エンティティ、関係、又は手続きのうちの少なくとも1つを含む一連の概念を記憶し、前記一連の概念のうちの一概念は、前記プロセスシーケンスの現在の状態に対する概念の関連性を示す第1の数値的属性と、前記概念を使用する難易度を示す第2の数値的属性とを含む、メモリプラットフォームと、
を含む、処理プラットフォーム
を含む、請求項12に記載の製造プラットフォーム。 - インタラクティブコンポーネントは、更に、前記複数の処理モジュールのうちの1つ以上からモジュール診断データを受け取り、前記パッケージされたデータを準備するときに、前記モジュール診断データを前記測定データと共にパッケージする、請求項13に記載の製造プラットフォーム。
- 外部アクターとのデータ交換を容易にする相互作用マネージャを前記相互作用コンポーネントが更に含む、請求項13に記載の製造プラットフォーム。
- パッケージされたデータ又は前記外部アクターと交換される前記データのうちの少なくとも1つは、トレーニングデータを含む、請求項15に記載の製造プラットフォーム。
- 前記トレーニングデータは、タスクに関連するモジュールプロセス又は変数の識別のうちの少なくとも1つ、前記タスクに関連する2つ以上のモジュールプロセス又は変数間の機能的関係、因果グラフであって、前記タスクに関連し、前記因果グラフ中に存在する一連のモジュールプロセス又は変数に関連する一連の先験的確率と、前記タスクに関連し、前記因果グラフ中に存在する1つ以上のモジュールプロセス又は変数に関連する一連の条件付き確率とを含む因果グラフ、又は前記プロセスシーケンスの挙動を記述する一連のパラメータを更に含む、請求項16に記載の製造プラットフォーム。
- 共通の製造プラットフォーム上にホストされた複数の処理モジュールを通してワークピースを処理することであって、前記ワークピースは複数の電子デバイスを含み、前記処理することは、少なくとも1つの膜形成プロセスと少なくとも1つのエッチングプロセス又は膜処理プロセスとを有するプロセスシーケンスを実施することを含む、ことと、
前記共通の製造プラットフォーム上で前記ワークピースの製作測定データを収集することであって、前記製作測定データは、前記共通の製造プラットフォーム上で実施される前記プロセスシーケンスの少なくとも一部に基づいた前記ワークピースの属性の測定値である、ことと、
前記プロセスシーケンスの少なくとも一部のプロセスを実施している前記処理モジュールのうちの少なくとも1つで処理されているワークピースからその場プロセス計測データを収集することと、
前記ワークピースの不適合を、前記収集された製作測定データ及び前記その場プロセス計測データのうちの少なくとも1つに基づいて検出することと、
不適合が検出された場合、前記製作測定データ及び前記その場プロセス計測データのうちの少なくとも1つが収集された後に、前記共通の製造プラットフォーム上の前記プロセスシーケンス内の前記ワークピースの補正処理を実行するために、前記プロセスシーケンスに対して能動的阻止を実施することと、
を含み、
前記共通の製造プラットフォームは、第1搬送測定モジュール及び第2搬送測定モジュールを備え、
前記第1搬送測定モジュール及び前記第2搬送測定モジュールの各々は、それぞれ測定モジュールを備え、
前記第1搬送測定モジュールは第1パススルーチャンバを介して前記第2搬送測定モジュールに接続されており、
前記第2搬送測定モジュールは第2パススルーチャンバを介してワークピースバッチ/デバッチモジュールに接続されており、
前記複数の処理モジュールの各処理モジュールは、前記第1搬送測定モジュール及び前記第2搬送測定モジュールのうちの1つに接続されている、
方法。 - 前記補正処理は、前記共通の製造プラットフォーム上の処理モジュールの処理を変化させること、又は前記ワークピースを廃棄すること、又は前記不適合についてオペレータに通知することのうちの少なくとも1つを含む、請求項18に記載の方法。
- その場プロセス計測データを前記収集することは、前記プロセスシーケンスのプロセス工程の最中に前記処理モジュール内その場で行われる、請求項19に記載の方法。
- 前記補正処理は、前記その場プロセス計測データが取得されたのと同じ処理モジュール内その場で行われる、請求項20に記載の方法。
- 製作測定データを前記収集することは、前記処理モジュールの現場外、且つ前記共通の製造プラットフォーム内で行われる、請求項18に記載の方法。
- 前記補正処理は、前記その場プロセス計測データが収集された前記処理モジュールの現場外、且つ前記共通の製造プラットフォーム内で行われる、請求項20に記載の方法。
- 1つ以上の処理モジュールの動作に関するプロセスパラメータデータ、又は前記共通の製造プラットフォームの動作に関するプラットフォーム性能データのうちの少なくとも1つを収集することと、
製作測定データ、前記プロセスパラメータデータ、又は前記プラットフォーム性能データのうちの少なくとも1つに基づいて、後続のワークピースのプロセスシーケンスに対する能動的阻止を実施することと、
を更に含む、請求項18に記載の方法。 - プロセスシーケンスに対する能動的阻止は、前記不適合を補正するために前記ワークピースを改善プロセスシーケンスに曝すことを含む、請求項18に記載の方法。
- 前記改善プロセスシーケンスは、前記ワークピースを洗浄すること、前記ワークピースから膜を除去すること、又は前記ワークピースから前記膜の一部を除去することのうちの少なくとも1つを含む、請求項25に記載の方法。
- 前記改善プロセスシーケンスは、前記共通の製造プラットフォーム上で実施される、請求項25に記載の方法。
- 前記改善プロセスシーケンスは、前記共通の製造プラットフォームの外部で実施される、請求項26に記載の方法。
- 前記改善プロセスシーケンスは、極低温冷却されたスプレーを用いて前記ワークピースを洗浄することを含む、請求項25に記載の方法。
- プロセスシーケンスに対する能動的阻止は、検出された前記不適合を修正するために、前記ワークピースを調整プロセスシーケンスに曝すことを含む、請求項18に記載の方法。
- 前記調整プロセスシーケンスは、1つ以上のプロセス条件を、不適合が検出された製作測定データ又はその場プロセス計測データに少なくとも部分的に基づいて制御することを含む、請求項30に記載の方法。
- 前記調整プロセスシーケンスは、処理モジュールの1つ以上のプロセス条件を、前記不適合の補正に対応するモデルに少なくとも部分的に基づいて制御することを含む、請求項30に記載の方法。
- 前記調整プロセスシーケンスは、膜形成プロセス、エッチングプロセス、又は膜処理プロセス間で交互させることを含む、請求項30に記載の方法。
- 能動的阻止を実施した後、前記能動的阻止に基づいた前記不適合に対する影響を決定するために、前記ワークピースの製作測定データを収集することを更に含む、請求項18に記載の方法。
- 前記決定された前記不適合に対する影響に基づいて、ワークピースに対する前記プロセスシーケンスを継続させることを更に含む、請求項34に記載の方法。
- 前記製作測定データは、以下、層厚さ、層のコンフォーマル性、層の被覆範囲、層のプロファイル、エッジ配置位置、エッジ配置誤差(EPE)、クリティカルディメンション(CD)、ブロッククリティカルディメンション(CD)、グリッドクリティカルディメンション(CD)、ライン幅粗さ(LWR)、ラインエッジ粗さ(LER)、ブロックLWR、グリッドLWR、選択的堆積に関する特性、選択性エッチングに関する特性、物性、光学的性質、電気的性質、屈折率、抵抗、電流、電圧、温度、質量、速度、加速度、又はワークピース上に製作される電子デバイスに関連するこれらの組み合わせのうちの1つ以上を含む属性に関連する測定値である、請求項18に記載の方法。
- プロセスパラメータデータは、前記処理モジュールで実行される1つ以上のプロセス条件の表示を含む、請求項24に記載の方法。
- 前記プロセス条件は、プラズマ密度、プラズマ均一性、プラズマ温度、エッチングレート、エッチング均一性、堆積速度、及び/又は堆積均一性のうちの少なくとも1つに基づいている、請求項37に記載の方法。
- 前記プロセス条件は、前記処理モジュール内に配置されたプラズマ源に印加されるエネルギーの振幅、周波数、変調のうちの少なくとも1つを含む、請求項37に記載の方法。
- 前記プロセス条件は、前記プロセスシーケンス中に前記処理モジュールに流入させるガス流量を含む、請求項37に記載の方法。
- 前記プロセス条件は、前記処理モジュール内に配置されたワークピースホルダの温度を含む、請求項37に記載の方法。
- 前記プロセス条件は、前記プロセスシーケンス中の前記処理モジュール内の圧力を含む、請求項37に記載の方法。
- プラットフォーム性能データは、前記プロセスシーケンスの実行に寄与するプラットフォーム属性の表示又はプロセスモジュールが前記プロセスシーケンスに供された時間の長さの表示のうちの少なくとも1つを含む、請求項37に記載の方法。
- プラットフォーム属性は、プロセス冷却水温度、プロセス冷却水流量、プロセスモジュールの処理時間、プロセスモジュールの累積厚さを含む、請求項43に記載の方法。
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US62/788,195 | 2019-01-04 | ||
PCT/US2019/022608 WO2019182913A1 (en) | 2018-03-20 | 2019-03-15 | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
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Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016123865A1 (de) * | 2016-12-08 | 2018-06-14 | Schott Ag | Verfahren zum Weiterverarbeiten eines Glasrohr-Halbzeugs einschließlich einer thermischen Umformung |
DE102016124833A1 (de) | 2016-12-19 | 2018-06-21 | Schott Ag | Verfahren zum Herstellen eines Hohlglasprodukts aus einem Glasrohr-Halbzeug mit Markierungen, sowie Verwendungen hiervon |
KR20200108876A (ko) * | 2018-01-26 | 2020-09-21 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
KR20200123480A (ko) | 2018-03-20 | 2020-10-29 | 도쿄엘렉트론가부시키가이샤 | 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법 |
US10896833B2 (en) * | 2018-05-09 | 2021-01-19 | Applied Materials, Inc. | Methods and apparatus for detecting an endpoint of a seasoning process |
CN112368822B (zh) * | 2018-06-27 | 2023-09-22 | 东京毅力科创株式会社 | 利用选择性双层电介质再生的全自对准过孔 |
KR102635828B1 (ko) | 2018-09-20 | 2024-02-15 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US11681929B2 (en) * | 2018-10-02 | 2023-06-20 | Honeywell International Inc. | Methods and systems for predicting a remaining useful life of a component using an accelerated failure time model |
US11335596B2 (en) | 2018-10-30 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selective deposition for integrated circuit interconnect structures |
US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
US11366457B1 (en) * | 2018-11-16 | 2022-06-21 | On-Time.Ai, Inc. | Controling operation of machine tools using artificial intelligence |
JP7304692B2 (ja) * | 2018-12-13 | 2023-07-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US10886155B2 (en) * | 2019-01-16 | 2021-01-05 | Applied Materials, Inc. | Optical stack deposition and on-board metrology |
CN113614809B (zh) * | 2019-03-27 | 2023-03-14 | 三菱电机株式会社 | 车辆控制用运算装置、车辆控制装置及车辆控制用运算方法 |
US11156991B2 (en) * | 2019-06-24 | 2021-10-26 | Nanotronics Imaging, Inc. | Predictive process control for a manufacturing process |
JP6956147B2 (ja) * | 2019-07-23 | 2021-10-27 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US20210103221A1 (en) * | 2019-10-08 | 2021-04-08 | International Business Machines Corporation | Tool control using multistage lstm for predicting on-wafer measurements |
US20230023764A1 (en) * | 2019-12-17 | 2023-01-26 | Applied Materials, Inc. | Surface profiling and texturing of chamber components |
TWI740313B (zh) * | 2019-12-18 | 2021-09-21 | 新加坡商鴻運科股份有限公司 | 虛擬量測方法、裝置及電腦可讀存儲介質 |
KR20210081729A (ko) * | 2019-12-24 | 2021-07-02 | 에스케이하이닉스 주식회사 | 반도체 테스트 시스템 및 방법 |
US20210202244A1 (en) * | 2019-12-30 | 2021-07-01 | Tokyo Electron Limited | High-throughput multi-stage manufacturing platform and method for processing a plurality of substrates |
CN115516657A (zh) | 2020-01-22 | 2022-12-23 | 应用材料公司 | Oled层厚度和掺杂剂浓度的产线内监测 |
WO2021150524A1 (en) | 2020-01-22 | 2021-07-29 | Applied Materials, Inc. | In-line monitoring of oled layer thickness and dopant concentration |
US11515203B2 (en) | 2020-02-05 | 2022-11-29 | Tokyo Electron Limited | Selective deposition of conductive cap for fully-aligned-via (FAV) |
US11415971B2 (en) | 2020-02-10 | 2022-08-16 | Globalwafers Co., Ltd. | Systems and methods for enhanced wafer manufacturing |
US11086988B1 (en) | 2020-02-28 | 2021-08-10 | Nanotronics Imaging, Inc. | Method, systems and apparatus for intelligently emulating factory control systems and simulating response data |
JP7458097B2 (ja) * | 2020-02-28 | 2024-03-29 | ナノトロニクス イメージング インコーポレイテッド | 工場制御システムをインテリジェントにエミュレートし、応答データをシミュレートするための方法、システム及び装置 |
TWI801820B (zh) * | 2020-03-09 | 2023-05-11 | 美商奈米創尼克影像公司 | 用於製造流程之系統及方法 |
US11939665B2 (en) * | 2020-03-10 | 2024-03-26 | Tokyo Electron Limted | Film thickness measuring apparatus and film thickness measuring method, and film forming system and film forming method |
US11221300B2 (en) | 2020-03-20 | 2022-01-11 | KLA Corp. | Determining metrology-like information for a specimen using an inspection tool |
JP7298016B2 (ja) | 2020-03-30 | 2023-06-26 | 株式会社日立ハイテク | 診断システム |
CN115298794A (zh) * | 2020-03-31 | 2022-11-04 | 株式会社日立高新技术 | 带电粒子束装置 |
JP7230877B2 (ja) * | 2020-04-20 | 2023-03-01 | 株式会社Sumco | エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法 |
US11450506B2 (en) * | 2020-04-24 | 2022-09-20 | Tel Manufacturing And Engineering Of America, Inc. | Pattern enhancement using a gas cluster ion beam |
TWI724888B (zh) * | 2020-05-05 | 2021-04-11 | 崑山科技大學 | 磁浮系統之深度學習比例微分控制方法 |
TWI718945B (zh) * | 2020-05-12 | 2021-02-11 | 國立彰化師範大學 | 主動式恆定施力感測控制系統 |
CN111614587B (zh) * | 2020-05-25 | 2021-04-06 | 齐鲁工业大学 | 一种基于自适应集成深度学习模型的sc-fde系统信号检测方法 |
WO2021245741A1 (ja) * | 2020-06-01 | 2021-12-09 | 信越半導体株式会社 | ウェーハ外周歪みの評価方法 |
EP4165682A1 (en) * | 2020-06-12 | 2023-04-19 | The Government of the United States of America, as represented by the Secretary of the Navy | Surface profile mapping for evaluating iii-n device performance and yield |
CN114096972A (zh) * | 2020-06-15 | 2022-02-25 | 株式会社日立高新技术 | 装置诊断装置、装置诊断方法、等离子处理装置以及半导体装置制造系统 |
USD977504S1 (en) | 2020-07-22 | 2023-02-07 | Applied Materials, Inc. | Portion of a display panel with a graphical user interface |
US11688616B2 (en) * | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
TW202229581A (zh) * | 2020-08-28 | 2022-08-01 | 日商東京威力科創股份有限公司 | 成膜裝置、及具有含矽的膜之部件的製造方法 |
JP7203070B2 (ja) * | 2020-09-23 | 2023-01-12 | 株式会社Kokusai Electric | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
US20220165541A1 (en) * | 2020-11-24 | 2022-05-26 | Applied Materials, Inc. | Etch feedback for control of upstream process |
US20220178845A1 (en) * | 2020-12-07 | 2022-06-09 | Nanya Technology Corporation | Electronic system and method of specimen qualification |
US20220199544A1 (en) * | 2020-12-17 | 2022-06-23 | Intel Corporation | Cap structure for interconnect dielectrics and methods of fabrication |
CN112579512B (zh) * | 2020-12-24 | 2023-04-18 | 中国航空工业集团公司西安航空计算技术研究所 | 一种机载嵌入式智能微处理系统 |
CN112813422B (zh) * | 2020-12-30 | 2022-02-15 | 无锡邑文电子科技有限公司 | 一种基于腔体互联的沉积方法和沉积设备 |
US11709477B2 (en) * | 2021-01-06 | 2023-07-25 | Applied Materials, Inc. | Autonomous substrate processing system |
CN112750738B (zh) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | 一种离子束刻蚀设备及其刻蚀方法 |
CN112420543B (zh) * | 2021-01-22 | 2021-04-16 | 山东元旭光电股份有限公司 | 一种晶圆自动检测线 |
US20220236051A1 (en) * | 2021-01-25 | 2022-07-28 | Changxin Memory Technologies, Inc. | Method for detecting etching defects of etching equipment |
US11901286B2 (en) * | 2021-01-28 | 2024-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diagonal via pattern and method |
US20220238323A1 (en) * | 2021-01-28 | 2022-07-28 | Tokyo Electron Limited | Method for selective deposition of dielectric on dielectric |
US20220258304A1 (en) * | 2021-02-16 | 2022-08-18 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
JP2022133631A (ja) * | 2021-03-02 | 2022-09-14 | 株式会社東京精密 | パーティクル計測装置、三次元形状測定装置、プローバ装置、パーティクル計測システム及びパーティクル計測方法 |
TW202242958A (zh) * | 2021-03-02 | 2022-11-01 | 日商東京威力科創股份有限公司 | 資料收集系統、資料收集裝置、資料收集方法及資料收集程式 |
TWI787757B (zh) * | 2021-03-15 | 2022-12-21 | 高聖精密機電股份有限公司 | 智能加工系統及其加工方法 |
JP7366952B2 (ja) * | 2021-03-23 | 2023-10-23 | 芝浦メカトロニクス株式会社 | プラズマ処理装置の検査方法 |
TWI782539B (zh) * | 2021-05-21 | 2022-11-01 | 聯策科技股份有限公司 | 智慧化加工之方法與系統 |
TWI788855B (zh) * | 2021-05-25 | 2023-01-01 | 旺宏電子股份有限公司 | 偵測系統 |
KR102545754B1 (ko) * | 2021-05-27 | 2023-06-20 | 세메스 주식회사 | 기판 처리 장치 및 기판 상태 검출 방법 |
WO2022265874A1 (en) * | 2021-06-17 | 2022-12-22 | Tokyo Electron Limited | Dry resist system and method of using |
TWI819318B (zh) * | 2021-06-17 | 2023-10-21 | 台達電子工業股份有限公司 | 機台監控裝置以及方法 |
CN113253037B (zh) * | 2021-06-22 | 2021-10-08 | 北京赛博联物科技有限公司 | 基于电流波纹的边云协同设备状态监测方法及系统、介质 |
CN115599620A (zh) * | 2021-06-28 | 2023-01-13 | 深圳富桂精密工业有限公司(Cn) | 监控告警方法及终端设备 |
CN113538392B (zh) * | 2021-07-26 | 2022-11-11 | 长江存储科技有限责任公司 | 晶圆的检测方法、设备及存储介质 |
US20230032146A1 (en) * | 2021-07-27 | 2023-02-02 | Applied Materials, Inc. | Simultaneous in process metrology for cluster tool architecture |
US11983476B2 (en) * | 2021-07-30 | 2024-05-14 | International Business Machines Corporation | Technology-independent line end routing |
US11966682B2 (en) | 2021-07-30 | 2024-04-23 | International Business Machines Corporation | Fast independent checker for extreme ultraviolet (EUV) routing |
IL310738A (en) * | 2021-08-26 | 2024-04-01 | Asml Netherlands Bv | A method for determining a measuring recipe and related devices |
US11892382B2 (en) * | 2021-08-27 | 2024-02-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for detecting environmental parameter in semiconductor fabrication facility |
CN113705487B (zh) * | 2021-08-31 | 2023-08-08 | 西南交通大学 | 精密工件识别及工艺参数关联系统以及识别方法 |
US20230089982A1 (en) * | 2021-09-10 | 2023-03-23 | Applied Materials, Inc. | Methods and mechanisms for coupling sensors to transfer chamber robot |
US20230080707A1 (en) * | 2021-09-13 | 2023-03-16 | Advanced Energy Industries, Inc. | Model reference adaptive control with signum projection tensor operations |
US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
JP7200346B1 (ja) | 2021-12-22 | 2023-01-06 | Sppテクノロジーズ株式会社 | プログラム、情報処理方法、情報処理装置及びモデルの生成方法 |
US20230257900A1 (en) * | 2022-02-11 | 2023-08-17 | Applied Materials, Inc. | Parameter adjustment model for semiconductor processing chambers |
TWI819578B (zh) * | 2022-04-20 | 2023-10-21 | 國立中央大學 | 多目標參數最佳化系統、方法及電腦程式產品 |
US20230341841A1 (en) * | 2022-04-24 | 2023-10-26 | Applied Materials, Inc. | Bayesian decomposition for mismatched performances in semiconductor equipment |
US20230350394A1 (en) * | 2022-04-27 | 2023-11-02 | Applied Materials, Inc. | Run-to-run control at a manufacturing system using machine learning |
US20230378006A1 (en) * | 2022-05-23 | 2023-11-23 | Applied Materials, Inc. | In-situ integrated wafer parameter detection system |
CN114817077B (zh) * | 2022-06-27 | 2022-09-06 | 云账户技术(天津)有限公司 | 测试质量及规范的判断方法、系统和网络设备 |
WO2024091865A1 (en) * | 2022-10-24 | 2024-05-02 | Ohio State Innovation Foundation | Method for backward failure propagation in conceptual system design |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179120A (ja) | 1994-08-19 | 2003-06-27 | Tokyo Electron Ltd | 処理装置 |
JP2009543355A (ja) | 2006-07-03 | 2009-12-03 | アプライド マテリアルズ インコーポレイテッド | 進歩型フロントエンド処理のためのクラスターツール |
JP2014013581A (ja) | 2008-03-08 | 2014-01-23 | Tokyo Electron Ltd | 生物学に基づく自律学習ツール |
Family Cites Families (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6203582B1 (en) * | 1996-07-15 | 2001-03-20 | Semitool, Inc. | Modular semiconductor workpiece processing tool |
US5963315A (en) * | 1997-08-18 | 1999-10-05 | Motorola, Inc. | Method and apparatus for processing a semiconductor wafer on a robotic track having access to in situ wafer backside particle detection |
JPH11307604A (ja) * | 1998-04-17 | 1999-11-05 | Toshiba Corp | プロセスモニタ方法及びプロセス装置 |
US6830942B1 (en) * | 1999-04-06 | 2004-12-14 | Lucent Technologies Inc. | Method for processing silicon workpieces using hybrid optical thermometer system |
JP2000299367A (ja) * | 1999-04-15 | 2000-10-24 | Tokyo Electron Ltd | 処理装置及び被処理体の搬送方法 |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
TWI275436B (en) * | 2002-01-31 | 2007-03-11 | Ebara Corp | Electrochemical machining device, and substrate processing apparatus and method |
US7101260B2 (en) * | 2002-07-29 | 2006-09-05 | Nanoclean Technologies, Inc. | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants |
US20040126482A1 (en) * | 2002-12-31 | 2004-07-01 | Chih-I Wu | Method and structure for selective surface passivation |
US7482178B2 (en) * | 2003-08-06 | 2009-01-27 | Applied Materials, Inc. | Chamber stability monitoring using an integrated metrology tool |
US8639489B2 (en) * | 2003-11-10 | 2014-01-28 | Brooks Automation, Inc. | Methods and systems for controlling a semiconductor fabrication process |
US7127358B2 (en) * | 2004-03-30 | 2006-10-24 | Tokyo Electron Limited | Method and system for run-to-run control |
US20070196011A1 (en) * | 2004-11-22 | 2007-08-23 | Cox Damon K | Integrated vacuum metrology for cluster tool |
US9099506B2 (en) * | 2005-03-30 | 2015-08-04 | Brooks Automation, Inc. | Transfer chamber between workstations |
US20090023230A1 (en) * | 2007-07-20 | 2009-01-22 | Applied Materials, Inc. | Methods and apparatus for depositing an anti-reflection coating |
JP2009064726A (ja) | 2007-09-07 | 2009-03-26 | Tokyo Electron Ltd | 基板検査装置及び基板検査方法並びに記憶媒体 |
US20090112520A1 (en) * | 2007-10-30 | 2009-04-30 | Applied Materials, Inc. | Self-aware semiconductor equipment |
JP4784599B2 (ja) * | 2007-12-28 | 2011-10-05 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理方法並びに記憶媒体 |
US7902613B1 (en) * | 2008-01-28 | 2011-03-08 | Cadence Design Systems, Inc. | Self-alignment for semiconductor patterns |
CN101911253B (zh) * | 2008-01-31 | 2012-08-22 | 应用材料公司 | 闭环mocvd沉积控制 |
US8232212B2 (en) * | 2008-07-11 | 2012-07-31 | Applied Materials, Inc. | Within-sequence metrology based process tuning for adaptive self-aligned double patterning |
US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
US7919335B2 (en) * | 2009-04-20 | 2011-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation of shallow trench isolation using chemical vapor etch |
TW201123340A (en) * | 2009-11-12 | 2011-07-01 | Hitachi High Tech Corp | Vacuum processing system and vacuum processing method of semiconductor processing substrate |
US8954184B2 (en) * | 2011-01-19 | 2015-02-10 | Tokyo Electron Limited | Tool performance by linking spectroscopic information with tool operational parameters and material measurement information |
JP6079200B2 (ja) * | 2012-05-16 | 2017-02-15 | 東京エレクトロン株式会社 | クーリング機構及び処理システム |
WO2014113220A1 (en) * | 2013-01-15 | 2014-07-24 | Applied Materials, Inc | Cryogenic liquid cleaning apparatus and methods |
JP6105436B2 (ja) * | 2013-08-09 | 2017-03-29 | 東京エレクトロン株式会社 | 基板処理システム |
WO2015038309A1 (en) * | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Method of forming strain-relaxed buffer layers |
US9059257B2 (en) * | 2013-09-30 | 2015-06-16 | International Business Machines Corporation | Self-aligned vias formed using sacrificial metal caps |
US20150118012A1 (en) * | 2013-10-31 | 2015-04-30 | Lam Research Corporation | Wafer entry port with gas concentration attenuators |
EP3102715A1 (en) * | 2014-02-04 | 2016-12-14 | Applied Materials, Inc. | Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material |
US9287386B2 (en) | 2014-06-19 | 2016-03-15 | Applied Materials, Inc. | Method for fabricating vertically stacked nanowires for semiconductor applications |
JP5993496B2 (ja) * | 2014-07-16 | 2016-09-14 | 株式会社神戸製鋼所 | 酸化物半導体薄膜、及び前記酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法 |
US9624578B2 (en) * | 2014-09-30 | 2017-04-18 | Lam Research Corporation | Method for RF compensation in plasma assisted atomic layer deposition |
TWI677046B (zh) * | 2015-04-23 | 2019-11-11 | 美商應用材料股份有限公司 | 半導體處理系統中的外部基板材旋轉 |
US9673091B2 (en) * | 2015-06-25 | 2017-06-06 | Globalfoundries Inc. | Structure for BEOL metal levels with multiple dielectric layers for improved dielectric to metal adhesion |
US10510566B2 (en) * | 2015-07-14 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cluster tool techniques with improved efficiency |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US9659864B2 (en) * | 2015-10-20 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for forming self-aligned via with selectively deposited etching stop layer |
WO2017105447A1 (en) * | 2015-12-16 | 2017-06-22 | Intel Corporation | Methods and apparatuses to provide ordered porosity |
US10365639B2 (en) * | 2016-01-06 | 2019-07-30 | Kla-Tencor Corporation | Feature selection and automated process window monitoring through outlier detection |
US10192762B2 (en) * | 2016-01-26 | 2019-01-29 | Applied Materials, Inc. | Systems and methods for detecting the existence of one or more environmental conditions within a substrate processing system |
US20170256449A1 (en) * | 2016-03-07 | 2017-09-07 | Globalfoundries Inc. | Methods of forming conductive structures with different material compositions in a metallization layer |
US10020204B2 (en) | 2016-03-10 | 2018-07-10 | Applied Materials, Inc. | Bottom processing |
KR102312824B1 (ko) * | 2016-03-17 | 2021-10-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 종횡비 구조들에서의 갭충전을 위한 방법들 |
US10354912B2 (en) * | 2016-03-21 | 2019-07-16 | Qualcomm Incorporated | Forming self-aligned vertical interconnect accesses (VIAs) in interconnect structures for integrated circuits (ICs) |
KR102463922B1 (ko) * | 2016-03-21 | 2022-11-08 | 에스케이하이닉스 주식회사 | 미세 패턴 형성 방법 |
US9748169B1 (en) * | 2016-04-04 | 2017-08-29 | International Business Machines Corporation | Treating copper interconnects |
US9847252B2 (en) * | 2016-04-12 | 2017-12-19 | Applied Materials, Inc. | Methods for forming 2-dimensional self-aligned vias |
US10358715B2 (en) | 2016-06-03 | 2019-07-23 | Applied Materials, Inc. | Integrated cluster tool for selective area deposition |
US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
US10438825B2 (en) * | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
JP7164289B2 (ja) * | 2016-09-05 | 2022-11-01 | 東京エレクトロン株式会社 | 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング |
KR102331718B1 (ko) * | 2017-06-08 | 2021-11-26 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
WO2019050735A1 (en) * | 2017-09-06 | 2019-03-14 | Micromaterials Llc | METHODS FOR PRODUCING SELF-ALIGNED INTERCONNECTION HOLES |
US10446659B2 (en) * | 2017-10-13 | 2019-10-15 | Globalfoundries Inc. | Negative capacitance integration through a gate contact |
KR20200123480A (ko) * | 2018-03-20 | 2020-10-29 | 도쿄엘렉트론가부시키가이샤 | 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법 |
CN112368822B (zh) * | 2018-06-27 | 2023-09-22 | 东京毅力科创株式会社 | 利用选择性双层电介质再生的全自对准过孔 |
US11769692B2 (en) * | 2018-10-31 | 2023-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | High breakdown voltage inter-metal dielectric layer |
-
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- 2019-03-15 WO PCT/US2019/022608 patent/WO2019182913A1/en active Application Filing
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- 2020-12-28 US US17/135,136 patent/US11456212B2/en active Active
-
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- 2021-01-04 US US17/140,310 patent/US11594451B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179120A (ja) | 1994-08-19 | 2003-06-27 | Tokyo Electron Ltd | 処理装置 |
JP2009543355A (ja) | 2006-07-03 | 2009-12-03 | アプライド マテリアルズ インコーポレイテッド | 進歩型フロントエンド処理のためのクラスターツール |
JP2014013581A (ja) | 2008-03-08 | 2014-01-23 | Tokyo Electron Ltd | 生物学に基づく自律学習ツール |
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