JP2017045927A - 気相成長装置及び気相成長方法 - Google Patents
気相成長装置及び気相成長方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 303
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 89
- 238000006243 chemical reaction Methods 0.000 claims abstract description 318
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 238000010790 dilution Methods 0.000 claims description 36
- 239000012895 dilution Substances 0.000 claims description 36
- 238000012360 testing method Methods 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 408
- 235000012431 wafers Nutrition 0.000 description 74
- 239000004065 semiconductor Substances 0.000 description 61
- 229910002601 GaN Inorganic materials 0.000 description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 239000000203 mixture Substances 0.000 description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
前記n個の反応室にそれぞれ設けられ、前記複数の基板を加熱する加熱部と、を備える。
本実施形態の気相成長装置は、複数の基板をそれぞれ同時に成膜処理するn(nは2以上の整数)個の反応室と、所定流量のIII族元素を含む第1のプロセスガスを分配してn個の反応室に同時に供給する第1の主ガス供給路と、所定流量のV族元素を含む第2のプロセスガスを分配してn個の反応室に同時に供給する第2の主ガス供給路と、各n個の反応室に供給される第1のプロセスガスの流量及び第2のプロセスガスの流量の設定値に基づき、第1のプロセスガスの流量及び第2のプロセスガスの流量を制御し、各n個の反応室で独立に設定された所定のプロセスパラメータの設定値に基づき、所定のプロセスパラメータを独立に制御する制御部と、n個の反応室にそれぞれ設けられ、複数の基板をそれぞれ回転させる回転駆動機構と、n個の反応室にそれぞれ設けられ、複数の基板を加熱する加熱部と、を備える。
本実施形態の気相成長装置は、n本の副ガス排出路のそれぞれに、圧力調整部を、更に備える。そして、制御部が反応室内の圧力の設定値を、n個の反応室の間で独立に設定し、n個の反応室で基板上に同時に膜が成長するよう制御する。上記の点で、本実施形態の気相成長装置は、第1の実施形態の気相成長装置と異なっている。
本実施形態の気相成長装置は、反応室が膜の成長中に膜厚の測定が可能な膜厚測定器を有する。そして、制御部が、膜の成長中に膜厚測定器による膜厚測定結果に基づき、反応室に供給されるIII族元素及びV族元素の濃度、基板回転数、及び、基板温度の設定値の内の少なくとも1つの設定値を、n個の反応室の間で独立に設定する。上記の点で、第1の実施形態の気相成長装置と異なっている。
本実施形態の気相成長装置は、第1の実施形態の気相成長装置と同じ構成であるが、本実施形態の気相成長方法は、加熱部の電力の設定値を低くして、n個の反応室の内の少なくとも1つの反応室について成膜処理を中止している点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
11 第1の主ガス供給路
19 制御部
19a 演算部
21 第2の主ガス供給路
33a〜c 第5の副ガス供給路(希釈ガス供給ライン)
33d 第6の副ガス供給路(希釈ガス供給ライン)
34a〜d 第3の副マスフローコントローラ
116 加熱部
120 回転駆動機構
150 膜厚測定器
W 半導体ウェハ(基板)
Claims (10)
- 複数の基板をそれぞれ同時に成膜処理するn(nは2以上の整数)個の反応室と、
所定流量のIII族元素を含む第1のプロセスガスを分配して前記n個の反応室に同時に供給する第1の主ガス供給路と、
所定流量のV族元素を含む第2のプロセスガスを分配して前記n個の反応室に同時に供給する第2の主ガス供給路と、
各前記n個の反応室に供給される前記第1のプロセスガスの流量及び前記第2のプロセスガスの流量の設定値に基づき、前記第1のプロセスガスの流量及び前記第2のプロセスガスの流量を制御し、各前記n個の反応室で独立に設定された所定のプロセスパラメータの設定値に基づき、前記所定のプロセスパラメータを独立に制御する制御部と、
前記n個の反応室にそれぞれ設けられ、前記複数の基板をそれぞれ回転させる回転駆動機構と、
前記n個の反応室にそれぞれ設けられ、前記複数の基板を加熱する加熱部と、
を備える気相成長装置。 - 前記所定のプロセスパラメータは、前記n個の反応室に供給されるプロセスガスにおける前記III族元素及び前記V族元素の濃度、基板回転数、基板温度、前記加熱部の出力、及び前記反応室内の圧力から選ばれる少なくとも1つである請求項1記載の気相成長装置。
- 前記制御部が、前記第1のプロセスガスの供給開始動作、前記第1のプロセスガスの供給停止動作、前記第2のプロセスガスの供給開始動作、及び、前記第2のプロセスガスの供給停止動作のそれぞれを、前記n個の反応室で同一の時刻に実行するよう制御する請求項1又は請求項2記載の気相成長装置。
- 前記n個の反応室のそれぞれに希釈ガスを供給するn本の希釈ガス供給ラインを更に備え、
前記制御部は、前記n個の反応室それぞれにおいて独立に設定される前記III族元素及び前記V族元素の濃度の設定値に基づき、前記希釈ガスの供給量を制御する請求項2又は請求項3記載の気相成長装置。 - 前記反応室が膜の成長中に膜厚の測定が可能な膜厚測定器を有し、前記制御部が、前記膜の成長中に前記膜厚測定器による膜厚測定結果に基づき、前記所定のプロセスパラメータの内の少なくとも1つの設定値を、前記n個の反応室の間で独立に変動させて調整する請求項1乃至請求項4いずれか一項記載の気相成長装置。
- 前記制御部が、前記n個の反応室のそれぞれにおいて予め得られた膜特性と前記所定のプロセスパラメータとの相関情報と、前記n個の反応室において予め得られた膜特性とから、前記所定のプロセスパラメータの前記設定値を演算する演算部を有する請求項1乃至請求項5いずれか一項記載の気相成長装置。
- 複数の基板を、n個の反応室のそれぞれに搬入し、
所定流量のIII族元素を含む第1のプロセスガスを分配して前記n個の反応室のそれぞれに第1の流量の設定値に基づき制御された流量で前記第1のプロセスガスの供給を同時に開始し、
所定流量のV族元素を含む第2のプロセスガスを分配して前記n個の反応室のそれぞれに第2の流量の設定値に基づき制御された流量で前記第2のプロセスガスの供給を同時に開始し、
前記n個の反応室におけるそれぞれの所定のプロセスパラメータの設定値に基づき、前記n個の反応室における前記所定のプロセスパラメータをそれぞれ独立に制御し、前記n個の反応室で前記複数の基板のそれぞれの上に同時に膜を成長させ、
前記n個の反応室への前記第1のプロセスガスの供給を同時に停止し、
前記n個の反応室への前記第2のプロセスガスの供給を同時に停止する気相成長方法。 - 複数のテスト基板を、前記n個の反応室のそれぞれに搬入し、
所定流量の前記第1のプロセスガスを分配して前記n個の反応室のそれぞれに前記第1の流量の設定値に基づき制御された流量で前記第1のプロセスガスの供給を同時に開始し、
所定流量の前記第2のプロセスガスを分配して前記n個の反応室のそれぞれに前記第2の流量の設定値に基づき制御された流量で前記第2のプロセスガスの供給を同時に開始し、
前記所定のプロセスパラメータの初期設定値に基づき、前記所定のパラメータを制御し、
前記n個の反応室で前記複数のテスト基板上に同時に膜を成長させ、
前記n個の反応室への前記第1のプロセスガスの供給を同時に停止し、
前記n個の反応室への前記第2のプロセスガスの供給を同時に停止し、
前記複数の前記テスト基板上に成長した前記膜の特性を測定し、
測定された前記膜の特性に基づき、前記n個の反応室においてそれぞれの前記所定のプロセスパラメータの設定値を求める請求項7記載の気相成長方法。 - 前記所定のプロセスパラメータは、前記n個の反応室に供給されるプロセスガスにおける前記III族元素及び前記V族元素の濃度、基板回転数、基板温度、前記反応室内に設けられ、前記複数の基板のそれぞれを加熱する加熱部の電力、及び前記反応室内の圧力から選ばれる少なくとも1つである請求項7又は請求項8記載の気相成長方法。
- 前記所定のプロセスパラメータは、前記加熱部の電力又は前記基板温度であり、
前記n個の反応室のうち少なくとも1つの反応室において、前記加熱部の電力又は前記基板温度の設定値を、前記基板上に前記膜を成長させるときの設定値より低い値に設定して、前記膜の成長を中止する請求項9記載の気相成長方法。
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