US10385474B2 - Vapor phase growth apparatus and vapor phase growth method - Google Patents
Vapor phase growth apparatus and vapor phase growth method Download PDFInfo
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- US10385474B2 US10385474B2 US15/244,235 US201615244235A US10385474B2 US 10385474 B2 US10385474 B2 US 10385474B2 US 201615244235 A US201615244235 A US 201615244235A US 10385474 B2 US10385474 B2 US 10385474B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Definitions
- the present invention relates to a vapor phase growth apparatus and a vapor phase growth method that supply gas to form a film.
- a method for forming a high-quality semiconductor film there is an epitaxial growth technique which grows a single-crystal film on a substrate, such as a wafer, using vapor phase growth.
- a vapor phase growth apparatus using the epitaxial growth technique a wafer is placed on a support portion in a reactor which is maintained at normal pressure or reduced pressure. Then, process gas, such as source gas which will be a raw material for forming a film, is supplied from an upper part of the reactor to the surface of the wafer in the reactor while the wafer is being heated. For example, the thermal reaction of the source gas occurs in the surface of the wafer and an epitaxial single-crystal film is formed on the surface of the wafer.
- process gas such as source gas which will be a raw material for forming a film
- MOCVD Metal organic chemical vapor deposition
- TMG trimethylgallium
- TMI trimethylindium
- TMA trimethylaluminum
- NH 3 ammonia
- JP H10-158843A and JP 2002-212735A disclose a vapor phase growth apparatus that includes a plurality of reactors in order to improve productivity.
- JP 2003-49278A discloses a method that changes the pressure control value of a reactor caused a trouble when films are grown in a plurality of reactors.
- a vapor phase growth apparatus including: n (n is an integer equal to or greater than 2) reactors performing a deposition process for a plurality of substrates at the same time; a first main gas supply path distributing a predetermined amount of first process gas including a group-III element and supplying the first process gas to the n reactors at the same time; a second main gas supply path distributing a predetermined amount of second process gas including a group-V element and supplying the second process gas to the n reactors at the same time; a controller controlling a flow rate of the first process gas and a flow rate of the second process gas, on the basis of control values of flow rates of the first process gas and the second process gas supplied to the n reactors, the controller independently controlling at least one predetermined process parameter in the n reactors, on the basis of control values of the at least one predetermined process parameter independently set for each of the n reactors; a rotary driver provided in each of the n reactors and rotating each of the plurality of the plurality of substrates at the
- a vapor phase growth method including: loading a plurality of substrates to n reactors; distributing a predetermined amount of first process gas including a group-III element and starting the first process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a first flow rate; distributing a predetermined amount of second process gas including a group-V element and starting second process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a second flow rate; controlling independently at least one predetermined process parameter of the n reactors, on the basis of control values of the at least one predetermined process parameter, and growing films on the plurality of substrates in the n reactors at the same time; shutting off the first process gas supply to the n reactors at the same time; and shutting off the second process gas to the n reactors at the same time.
- FIG. 1 is a diagram illustrating the structure of a vapor phase growth apparatus according to a first embodiment
- FIG. 2 is a cross-sectional view schematically illustrating a reactor of the vapor phase growth apparatus according to the first embodiment
- FIG. 3 is a diagram illustrating the function and effect of the first embodiment
- FIG. 4 is a diagram illustrating the function and effect of the first embodiment
- FIG. 5 is a diagram illustrating the function and effect of the first embodiment
- FIG. 6 is a diagram illustrating the structure of a vapor phase growth apparatus according to a second embodiment.
- FIG. 7 is a cross-sectional view schematically illustrating a reactor of a vapor phase growth apparatus according to a third embodiment.
- a “lower” direction a direction opposite to the direction of gravity is defined as an “upper” direction. Therefore, a “lower portion” means a position in the direction of gravity relative to the reference and a “lower side” means the direction of gravity relative to the reference.
- an “upper portion” means a position in the direction opposite to the direction of gravity relative to the reference and an “upper side” means the direction opposite to the direction of gravity relative to the reference.
- a “longitudinal direction” is the direction of gravity.
- process gas is a general term of gas used to form a film on a substrate.
- the concept of the “process gas” includes, for example, source gas, carrier gas, and diluent gas.
- a vapor phase growth apparatus includes, n (n is an integer equal to or greater than 2) reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element and supplying the first process gas to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element and supplying the second process gas to the n reactors at the same time, a controller controlling a flow rate of the first process gas and a flow rate of the second process gas, on the basis of control values of the flow rates of the first process gas and the second process gas supplied to the n reactors, and independently controlling predetermined process parameters that are independently set for each of the n reactors, on the basis of control values of the predetermined process parameters, rotary drivers provided in each of the n reactors and rotating each of the plurality of substrates, and heaters provided in each of the n reactors and heating the
- a vapor phase growth method includes, loading a plurality of substrates to n reactors, distributing a predetermined amount of first process gas including a group-III element and starting the first process gas supply to the n reactors at a flow rate that is controlled on the basis of a control value of a first flow rate at the same time, distributing a predetermined amount of second process gas including a group-V element and starting the second process gas supply to the n reactors at a flow rate that is controlled on the basis of a control value of a second flow rate at the same time, independently controlling predetermined process parameters of the n reactors, on the basis of control values of the predetermined process parameters of the n reactors, and growing films on the plurality of substrates in the n reactors at the same time, shutting off the first process gas supply to the n reactors at the same time, and shutting off the second process gas supply to the n reactors at the same time.
- the vapor phase growth apparatus and the vapor phase growth method having the above-mentioned structure according to this embodiment when films are formed on substrates in a plurality of reactors at the same time, it is possible to adjust the characteristics of the films grown in each reactor.
- the characteristics of the film are, for example, the thickness or composition of the film.
- FIG. 1 is a diagram illustrating the structure of the vapor phase growth apparatus according to this embodiment.
- the vapor phase growth apparatus according to this embodiment is an epitaxial growth apparatus using a metal organic chemical vapor deposition (MOCVD) method.
- MOCVD metal organic chemical vapor deposition
- the vapor phase growth apparatus includes four reactors 10 a , 10 b , 10 c , and 10 d .
- Each of the four reactors 10 a , 10 b , 10 c , and 10 d is, for example, a vertical single-wafer-type epitaxial growth apparatus.
- the number of reactors is not limited to 4 and two or more reactors may be used.
- the number of reactors can be represented by n (n is an integer equal to or greater than 2).
- the vapor phase growth apparatus includes a first main gas supply path 11 , a second main gas supply path 21 , and a third main gas supply path 31 which supply process gas to the four reactors 10 a , 10 b , 10 c , and 10 d.
- the first main gas supply path 11 supplies, for example, a first process gas including organic metal, which is a group III element, and carrier gas to the reactors 10 a , 10 b , 10 c , and 10 d .
- the first process gas is gas including a group-III element when a group III-V semiconductor film is formed on a wafer.
- the first main gas supply path 11 distributes and supplies a predetermined amount of first process gas including a group-III element to the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the group-III element is, for example, gallium (Ga), aluminum (Al), or indium (In).
- the organic metal is, for example, trimethylgallium (TMG), trimethylaluminum (TMA), or trimethylindium (TMI).
- the carrier gas is, for example, hydrogen gas. Only the hydrogen gas may flow through the first main gas supply path 11 .
- a first main mass flow controller 12 is provided in the first main gas supply path 11 .
- the first main mass flow controller 12 controls the flow rate of the first process gas that flows through the first main gas supply path 11 .
- the first main gas supply path 11 is branched into three first sub-gas supply paths 13 a , 13 b , and 13 c and one second sub-gas supply path 13 d at a position that is closer to the reactors 10 a , 10 b , 10 c , and 10 d than to the first main mass flow controller 12 .
- the first sub-gas supply paths 13 a , 13 b , and 13 c and the second sub-gas supply path 13 d supply the distributed first process gases to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a first manometer 41 is provided in the first main gas supply path 11 .
- the first manometer 41 is provided between the first main mass flow controller 12 and the position where the first main gas supply path 11 is branched into the three first sub-gas supply paths 13 a , 13 b , and 13 c and the one second sub-gas supply path 13 d .
- the first manometer 41 monitors the pressure of the first main gas supply path 11 .
- First sub-mass flow controllers 14 a , 14 b , and 14 c are provided in the three first sub-gas supply paths 13 a , 13 b , and 13 c , respectively.
- the first sub-mass flow controllers 14 a , 14 b , and 14 c control the flow rate of the first process gas that flows through the first sub-gas supply paths 13 a , 13 b , and 13 c , respectively.
- the first sub-mass flow controllers 14 a , 14 b , and 14 c are a flow rate control type.
- a fourth sub-mass flow controller 14 d of an opening position control type is provided in the one second sub-gas supply path 13 d .
- the second sub-gas supply path 13 d supplies the first process gas to one reactor 10 d other than three reactors 10 a , 10 b , and 10 c to which the first sub-gas supply paths 13 a , 13 b , and 13 c supply the first process gas, respectively.
- the remainder of the first process gas which does not flow through the first sub-gas supply paths 13 a , 13 b , and 13 c flows from the second sub-gas supply path 13 d to the reactor 10 d.
- the degree of opening of the fourth sub-mass flow controller 14 d is controlled on the basis of the measurement result of the pressure of the first main gas supply path 11 monitored by the first manometer 41 .
- the degree of opening of the fourth sub-mass flow controller 14 d is controlled such that the pressure monitored by the first manometer 41 is zero. According to this structure, in the total amount of first process gas supplied from the first main gas supply path 11 , the remainder of the first process gas which does not flow through the first sub-gas supply paths 13 a , 13 b , and 13 c can flow from the second sub-gas supply path 13 d to the reactor 10 d.
- the second main gas supply path 21 supplies a second process gas including ammonia (NH 3 ) to the reactors 10 a , 10 b , 10 c , and 10 d .
- the second process gas is a source gas of a group-V element and nitrogen (N) when a group III-V semiconductor film is formed on a wafer.
- the second main gas supply path 21 distributes and supplies a predetermined amount of second process gas including a group-V element to the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- Only hydrogen gas may flow through the second main gas supply path 21 .
- a second main mass flow controller 22 is provided in the second main gas supply path 21 .
- the second main mass flow controller 22 controls the flow rate of the second process gas that flows through the second main gas supply path 21 .
- the second main gas supply path 21 is branched into three third sub-gas supply paths 23 a , 23 b , and 23 c and one fourth sub-gas supply path 23 d at a position that is closer to the reactors 10 a , 10 b , 10 c , and 10 d than to the second main mass flow controller 22 .
- the third sub-gas supply paths 23 a , 23 b , and 23 c and the fourth sub-gas supply path 23 d supply the distributed second process gases to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a second manometer 51 is provided in the second main gas supply path 21 .
- the second manometer 51 is provided between the second main mass flow controller 22 and the position where the second main gas supply path 21 is branched into the three third sub-gas supply paths 23 a , 23 b , and 23 c and the one fourth sub-gas supply path 23 d .
- the second manometer 51 monitors the pressure of the second main gas supply path 21 .
- Second sub-mass flow controllers 24 a , 24 b , and 24 c are provided in the three third sub-gas supply paths 23 a , 23 b , and 23 c , respectively.
- the second sub-mass flow controllers 24 a , 24 b , and 24 c control the flow rate of the second process gas that flows through the third sub-gas supply paths 23 a , 23 b , and 23 c , respectively.
- the second sub-mass flow controllers 24 a , 24 b , and 24 c are a flow rate control type.
- a fifth sub-mass flow controller 24 d of an opening position control type is provided in the one fourth sub-gas supply path 23 d .
- the fourth sub-gas supply path 23 d supplies the second process gas to one reactor 10 d other than three reactors 10 a , 10 b , and 10 c to which the third sub-gas supply paths 23 a , 23 b , and 23 c supply the second process gas, respectively.
- the remainder of the second process gas which does not flow through the third sub-gas supply paths 23 a , 23 b , and 23 c flows from the fourth sub-gas supply path 23 d to the reactor 10 d.
- the degree of opening of the fifth sub-mass flow controller 24 d is controlled on the basis of the measurement result of the pressure of the second main gas supply path 21 monitored by the second manometer 51 .
- the degree of opening of the fifth sub-mass flow controller 24 d is controlled such that the pressure monitored by the second manometer 51 is zero. According to this structure, in the total amount of second process gas supplied from the second main gas supply path 21 , the remainder of the second process gas which does not flow through the third sub-gas supply paths 23 a , 23 b , and 23 c can flow from the fourth sub-gas supply path 23 d to the reactor 10 d.
- the third main gas supply path 31 supplies a diluent gas which dilutes the first process gas and the second process gas to the reactors 10 a , 10 b , 10 c , and 10 d .
- the first process gas and the second process gas are diluted with the diluent gas to adjust the concentration of the group-III element and the group-V element supplied to the reactors 10 a , 10 b , 10 c , and 10 d .
- the diluent gas is inert gas, such as hydrogen gas, nitrogen gas, or argon gas, or a mixed gas thereof.
- a third main mass flow controller 32 is provided in the third main gas supply path 31 .
- the third main mass flow controller 32 controls the flow rate of the diluent gas that flows through the third main gas supply path 31 .
- the third main gas supply path 31 is branched into three fifth sub-gas supply paths (diluent gas supply lines) 33 a , 33 b , and 33 c and one sixth sub-gas supply path (diluent gas supply line) 33 d at a position that is closer to the reactors 10 a , 10 b , 10 c , and 10 d than to the third main mass flow controller 32 .
- the fifth sub-gas supply paths 33 a , 33 b , and 33 c and the sixth sub-gas supply path 33 d supply the distributed diluent gases to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- the three fifth sub-gas supply paths and the one sixth sub-gas supply path are an example of four diluent gas supply lines.
- a third manometer 61 is provided in the third main gas supply path 31 .
- the third manometer 61 is provided between the third main mass flow controller 32 and the position where the third main mass flow controller 32 is branched into the three fifth sub-gas supply paths 33 a , 33 b , and 33 c and the one sixth sub-gas supply path 33 d .
- the third manometer 61 monitors the pressure of the third main gas supply path 31 .
- Third sub-mass flow controllers 34 a , 34 b , and 34 c are provided in the three fifth sub-gas supply paths 33 a , 33 b , and 33 c , respectively.
- the third sub-mass flow controllers 34 a , 34 b , and 34 c control the flow rate of the diluent gas that flows through the fifth sub-gas supply paths 33 a , 33 b , and 33 c , respectively.
- the third sub-mass flow controllers 34 a , 34 b , and 34 c are a flow rate control type.
- a sixth sub-mass flow controller 34 d of an opening position control type is provided in the one sixth sub-gas supply path 33 d .
- the sixth sub-gas supply path 33 d supplies the diluent gas to one reactor 10 d other than three reactors 10 a , 10 b , and 10 c to which the fifth sub-gas supply paths 33 a , 33 b , and 33 c supply the diluent gas, respectively.
- the remainder of the diluent gas which does not flow through the fifth sub-gas supply paths 33 a , 33 b , and 33 c flows from the sixth sub-gas supply path 33 d to the reactor 10 d.
- the degree of opening of the sixth sub-mass flow controller 34 d is controlled on the basis of the measurement result of the pressure of the third main gas supply path 31 monitored by the third manometer 61 .
- the degree of opening of the sixth sub-mass flow controller 34 d is controlled such that the pressure monitored by the third manometer 61 is zero. According to this structure, in the total amount of diluent gas supplied from the third main gas supply path 31 , the remainder of the diluent gas which does not flow through the fifth sub-gas supply paths 33 a , 33 b , and 33 c can flow from the sixth sub-gas supply path 33 d to the reactor 10 d.
- Four adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d are connected to the fifth sub-gas supply paths 33 a , 33 b , and 33 c and the sixth sub-gas supply path 33 d , respectively.
- the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d are connected to the fifth sub-gas supply paths 33 a , 33 b , and 33 c and the sixth sub-gas supply path 33 d at the positions that are closer to the reactors 10 a , 10 b , 10 c , and 10 d than to the third sub-mass flow controllers 34 a , 34 b , and 34 c and the sixth sub-mass flow controller 34 d , respectively.
- the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d supply the diluent gas to the fifth sub-gas supply paths 33 a , 33 b , and 33 c and the sixth sub-gas supply path 33 d , respectively.
- Inert gas such as hydrogen gas, nitrogen gas, or argon gas, is supplied to the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d.
- Adjustment mass flow meters 134 a , 134 b , 134 c , and 134 d are provided in the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d , respectively.
- the adjustment mass flow meters 134 a , 134 b , 134 c , and 134 d adjust the amount of diluent gas supplied to the fifth sub-gas supply paths 33 a , 33 b , and 33 c and the sixth sub-gas supply path 33 d , respectively.
- the adjustment mass flow meters 134 a , 134 b , 134 c , and 134 d are, for example, a flow rate control type.
- the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d independently adjust the flow rate of the diluent gas supplied to the reactors 10 a , 10 b , 10 c , and 10 d .
- the concentration of the group-III element and the group-V element in the process gas supplied to the reactors can be independently adjusted by the adjustment gas supply paths 131 a , 131 b , 131 c , and 131 d.
- the vapor phase growth apparatus includes four sub-gas exhaust paths 15 a , 15 b , 15 c , and 15 d through which gas is discharged from the four reactors 10 a , 10 b , 10 c , and 10 d .
- the vapor phase growth apparatus includes a main gas exhaust path 16 that is connected to the four sub-gas exhaust paths 15 a , 15 b , 15 c , and 15 d .
- a vacuum pump 17 for drawing gas is provided in the main gas exhaust path 16 .
- the vacuum pump 17 is an example of a pump.
- the vapor phase growth apparatus includes a controller 19 .
- the controller 19 controls the flow rate of the first process gas and the flow rate of the second process gas, on the basis of the control values of the flow rates of the first process gas and the second process gas supplied to the four reactors 10 a , 10 b , 10 c , and 10 d .
- the controller 19 independently controls predetermined process parameters which are independently set for the four reactors 10 a , 10 b , 10 c , and 10 d , on the basis of the control values of the predetermined process parameters.
- the controller 19 can control the control values of the process parameters of the four reactors 10 a , 10 b , 10 c , and 10 d under the same conditions, that is, in the same process recipe, at the same time. In addition, the controller 19 performs control such that four operations, that is, a first process gas supply start operation, a first process gas supply shut off operation, a second process gas supply start operation, and a second process gas supply shut off operation are performed in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the controller 19 can perform control such that the control values of the predetermined process parameters of the four reactors 10 a , 10 b , 10 c , and 10 d are independently set for the four reactors 10 a , 10 b , 10 c , and 10 d and films are grown on the substrates at the same time in the four reactors 10 a , 10 b , 10 c , and 10 d , in order to match the characteristics of the films formed in the four reactors 10 a , 10 b , 10 c , and 10 d.
- the predetermined process parameters which can be independently set are at least one of the control values of the concentration of the group-III element and the group-V element supplied to the reactors, the rotation speed of the substrate, the temperature of the substrate, and an output from a heater.
- the controller 19 includes a calculator 19 a .
- the calculator 19 a has a function of calculating the control values of the predetermined process parameters from information about the correlation between the characteristics of the films obtained in advance in the four reactors 10 a , 10 b , 10 c , and 10 d and the predetermined process parameters and the characteristics of the films obtained in advance in the four reactors 10 a , 10 b , 10 c , and 10 d.
- the controller 19 is, for example, a controller.
- the controller is, for example, hardware or a combination of hardware and software.
- the controller 19 controls the amount of diluent gas supplied, on the basis of, for example, the control value of the concentration of the group-III element and the group-V element independently set for each of the four reactors 10 a , 10 b , 10 c , and 10 d.
- FIG. 2 is a cross-sectional view schematically illustrating the reactor of the vapor phase growth apparatus according to this embodiment.
- FIG. 2 illustrates one of the four reactors 10 a , 10 b , 10 c , and 10 d , for example, the reactor 10 a .
- the four reactors 10 a , 10 h , 10 c , and 10 d have the same structure.
- the reactor 10 a includes, for example, a wall surface 100 of a stainless cylindrical hollow body.
- a shower plate 101 is provided in an upper part of the reactor 10 a .
- the shower plate 101 supplies the process gas into the reactor 10 a.
- the reactor 10 a includes a support portion 112 .
- a semiconductor wafer (substrate) W can be placed on the support portion 112 .
- the support portion 112 is, for example, an annular holder that has an opening formed at the center thereof or a susceptor without an opening.
- the first sub-gas supply path 13 a , the third sub-gas supply path 23 a , and the fifth sub-gas supply path 33 a are connected to the shower plate 101 .
- a plurality of gas ejection holes for ejecting the first process gas, the second process gas, and the diluent gas which are mixed in the shower plate 101 into the reactor 10 a are provided in the surface of the shower plate 101 close to the reactor 10 a.
- the reactor 10 a includes a rotary driver 114 .
- the support portion 112 is provided above the rotary driver 114 .
- a rotating shaft 118 is connected to a rotary driver 120 .
- the rotary driver 120 can rotate the semiconductor wafer W placed on the support portion 112 at a speed that is, for example, equal to or greater than 50 rpm and equal to or less than 3000 rpm.
- the rotary driver 120 is, for example, a motor.
- the rotary driver 114 includes a heater 116 that heats the wafer W placed on the support portion 112 .
- the heater 116 is, for example, a heater.
- the heater 116 is provided in the rotary driver 114 so as to be fixed. Power is supplied to the heater 116 through an electrode 122 that passes through the rotating shaft 118 to control the output of the heater 116 from 0% to 100%.
- a push up pin (not illustrated) that passes through the heater 116 is provided in order to attach or detach the semiconductor wafer W to or from the support portion 112 .
- a gas discharge portion 126 is provided at the bottom of the reactor 10 a .
- the gas discharge portion 126 discharges a reaction product obtained by the reaction of source gas on the surface of the semiconductor wafer W and the process gas remaining in the reactor 10 a to the outside of the reactor 10 a .
- the gas discharge portion 126 is connected to the sub-gas exhaust path 15 a ( FIG. 1 ).
- a wafer inlet and a gate valve are provided in the wall surface 100 of the reactor 10 a .
- the semiconductor wafer W can be loaded to or unloaded from the reactor 10 a by the wafer inlet and the gate valve.
- a vapor phase growth method uses the epitaxial growth apparatus illustrated in FIGS. 1 and 2 .
- the vapor phase growth method according to this embodiment will be described.
- An example in which a stacked film obtained by stacking a plurality of first nitride semiconductor films including indium (In) and gallium (Ga) and a plurality of second nitride semiconductor films including gallium (Ga) is formed on a GaN film will be described.
- the first nitride semiconductor film and the second nitride semiconductor film are single-crystal films which are formed by epitaxial growth.
- the stacked film is, for example, a multi-quantum well (MQW) layer of a light emitting diode (LED).
- MQW multi-quantum well
- a variation in the characteristics of a film which is formed on a substrate for a test (test substrate) in each of the reactors 10 a , 10 b , 10 c , and 10 d is evaluated.
- the characteristics of the film are the thickness and composition of the film.
- the controller 19 controls the process parameters of the four reactors 10 a , 10 b , 10 c , and 10 d with the same initial control value.
- a semiconductor wafer W 2 which is an example of the test substrate, is loaded to each of the four reactors 10 a , 10 b , 10 c , and 10 d .
- GaN films are formed on a plurality of semiconductor wafers W 2 in advance.
- An indium gallium nitride (InGaN) film and a gallium nitride (GaN) film are alternately grown on the GaN film of the semiconductor wafer W 2 .
- a mixed gas (first process gas) of TMG and TMI having, for example, nitrogen gas as carrier gas is supplied from the first main gas supply path 11 to each of the four reactors 10 a , 10 b , 10 c , and 10 d .
- ammonia (second process gas) is supplied from the second main gas supply path 21 to each of the four reactors 10 a , 10 b , 10 c , and 10 d.
- TMG first process gas
- nitrogen gas as carrier gas
- ammonia second process gas
- the first process gas flows to the first main gas supply path 11 .
- the first process gas is distributed and flows to the three first sub-gas supply paths 13 a , 13 b , and 13 c and the one second sub-gas supply path 13 d which are branched from the first main gas supply path 11 .
- the flow rates of the first process gases distributed to the three first sub-gas supply paths 13 a , 13 b , and 13 c are controlled by the first sub-mass flow controllers 14 a , 14 b , and 14 c , respectively.
- the flow rates of the first process gases controlled by the first sub-mass flow controllers 14 a , 14 b , and 14 c are set such that a quarter (1 ⁇ 4) of the total amount of first process gas set by the first main mass flow controller 12 flows.
- the degree of opening of the fourth sub-mass flow controller 14 d is controlled such that the pressure of the first main gas supply path 11 monitored by the first manometer 41 is zero. In this way, the remainder of the first process gas which does not flow through the three first sub-gas supply paths 13 a , 13 b , and 13 c , that is, the amount of first process gas which corresponds to a quarter (1 ⁇ 4) of the total amount of first process gas flows to the remaining one second sub-gas supply path 13 d .
- the first process gases distributed from the first main gas supply path 11 to the three first sub-gas supply paths 13 a , 13 b , and 13 c and the second sub-gas supply path 13 d are supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a predetermined amount of first process gas is distributed and the supply of the first process gas to each of the four reactors 10 a , 10 b , 10 c , and 10 d at a flow rate that is controlled on the basis of the control value of a first flow rate starts at the same time.
- the second process gas flows to the second main gas supply path 21 . Then, the second process gas is distributed and flows to three third sub-gas supply paths 23 a , 23 b , and 23 c and one fourth sub-gas supply path 23 d which are branched from the second main gas supply path 21 .
- the flow rates of the second process gases distributed to the three third sub-gas supply paths 23 a , 23 b , and 23 c are controlled by the second sub-mass flow controllers 24 a , 24 b , and 24 c , respectively.
- the flow rates of the second process gases controlled by the second sub-mass flow controllers 24 a , 24 b , and 24 c are set such that a quarter (1 ⁇ 4) of the total amount of second process gas set by the second main mass flow controller 22 flows.
- the degree of opening of the fifth sub-mass flow controller 24 d is controlled such that the pressure of the second main gas supply path 21 monitored by the second manometer 51 is zero. In this way, the remainder of the second process gas which does not flow through the three third sub-gas supply paths 23 a , 23 b , and 23 c , that is, the amount of second process gas which corresponds to a quarter (1 ⁇ 4) of the total amount of second process gas flows to the remaining one fourth sub-gas supply path 23 d .
- the second process gases distributed from the second main gas supply path 21 to the three third sub-gas supply paths 23 a , 23 b , and 23 c and the fourth sub-gas supply path 23 d are supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a predetermined amount of second process gas is distributed and the supply of the second process gas to each of the four reactors 10 a , 10 b , 10 c , and 10 d at a flow rate that is controlled on the basis of the control value of a second flow rate starts at the same time.
- the controller 19 performs control such that four operations, that is, the first process gas supply start operation, the first process gas supply shut off operation, the second process gas supply start operation, and the second process gas supply shut off operation are performed in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the diluent gas is supplied from the third main gas supply path 31 to the four reactors 10 a , 10 b , 10 c , and 10 d on the basis of the same initial control value.
- the initial control values of three process parameters that is, the concentration of the group-III element and the group-V element supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the semiconductor wafer W 2 , and the temperature of the semiconductor wafer W 2 are set to the same value for the four reactors 10 a , 10 b , 10 c , and 10 d and films are grown on a plurality of semiconductor wafers W 2 in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the control value of the concentration of the group-III element and the group-V element supplied to the four reactors 10 a , 10 b , 10 c , and 10 d is, for example, the flow rate control values of the first main mass flow controller 12 and the second main mass flow controller 22 .
- the control value of the rotation speed of the semiconductor wafer W 2 is the rotation number control value of the rotary driver 114 .
- the control value of the temperature of the semiconductor wafer W 2 is, for example, the control value of power supplied to the heater 116 .
- the first process gas, the second process gas, and the diluent gas are supplied to each of the reactors 10 a , 10 b , 10 c , and 10 d by the above-mentioned method and a stacked film obtained by alternately stacking the InGaN film and the GaN film is formed on the semiconductor wafer W 2 .
- the semiconductor wafers W 2 are unloaded from the four reactors 10 a , 10 b , 10 c , and 10 d and the characteristics of the films grown on the semiconductor wafer W 2 are measured.
- the characteristics of the film are, for example, the thickness and composition of the film.
- the thickness of the film can be measured on an image captured by a transmission electron microscope (TEM).
- the composition of the film can be measured by, for example, a secondary ion mass spectrometry (SIMS).
- the control values of the process parameters to be set are determined on the basis of the characteristics of the films grown on the test semiconductor wafer W 2 .
- the process parameters are the concentration of the group-III element and the group-V element supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the semiconductor wafer W 2 , and the temperature of the semiconductor wafer W 2 .
- the calculator 19 a of the controller 19 calculates the control values of the concentration of the group-III element and the group-V element, the rotation speed of the semiconductor wafer W 2 , and the temperature of the semiconductor wafer W 2 from information about the correlation among the thickness and composition of the film obtained in advance in each of the four reactors 10 a , 10 b , 10 c , and 10 d , the concentration of the group-III element and the group-V element, the rotation speed of the semiconductor wafer W 2 , and the temperature of the semiconductor wafer W 2 and the thickness and composition of the film obtained from the semiconductor wafer W 2 .
- control values of the process parameters which are set for each of the reactors 10 a , 10 b , 10 c , and 10 d are set such that the films grown in the reactors 10 a , 10 b , 10 c , and 10 d have the same thickness and composition.
- a semiconductor wafer W 1 which is an example of the substrate is loaded to each of the four reactors 10 a , 10 b , 10 c , and 10 d .
- a GaN film is formed on the semiconductor wafer W 1 in advance.
- An InGaN film and a GaN film are alternately grown on the GaN film of the semiconductor wafer W 1 .
- a mixed gas (first process gas) of TMG and TMI having, for example, nitrogen gas as carrier gas is supplied from the first main gas supply path 11 to each of the four reactors 10 a , 10 b , 10 c , and 10 d .
- ammonia (second process gas) is supplied from the second main gas supply path 21 to each of the four reactors 10 a , 10 b , 10 c , and 10 d.
- TMG first process gas
- nitrogen gas as carrier gas
- second process gas ammonia
- the first process gas flows to the first main gas supply path 11 .
- the first process gas is distributed and flows to three first sub-gas supply paths 13 a , 13 b , and 13 c and one second sub-gas supply path 13 d which are branched from the first main gas supply path 11 .
- the flow rates of the first process gases distributed to the three first sub-gas supply paths 13 a , 13 b , and 13 c are controlled by the first sub-mass flow controllers 14 a , 14 b , and 14 c , respectively.
- the flow rates of the first process gases controlled by the first sub-mass flow controllers 14 a , 14 b , and 14 c are set such that a quarter (1 ⁇ 4) of the total amount of first process gas set by the first main mass flow controller 12 flows.
- the degree of opening of the fourth sub-mass flow controller 14 d is controlled such that the pressure of the first main gas supply path 11 monitored by the first manometer 41 is zero. In this way, the remainder of the first process gas which does not flow through the three first sub-gas supply paths 13 a , 13 b , and 13 c , that is, the amount of first process gas which corresponds to a quarter (1 ⁇ 4) of the total amount of first process gas flows to the remaining one second sub-gas supply path 13 d .
- the first process gases distributed from the first main gas supply path 11 to the three first sub-gas supply paths 13 a , 13 b , and 13 c and the second sub-gas supply path 13 d are supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a predetermined amount of first process gas is distributed and the supply of the first process gas to each of the four reactors 10 a , 10 b , 10 c , and 10 d at a flow rate that is controlled on the basis of the control value of a first flow rate starts at the same time.
- the second process gas flows to the second main gas supply path 21 . Then, the second process gas is distributed and flows to the three third sub-gas supply paths 23 a , 23 b , and 23 c and the one fourth sub-gas supply path 23 d which are branched from the second main gas supply path 21 .
- the flow rates of the second process gases distributed to the three third sub-gas supply paths 23 a , 23 b , and 23 c are controlled by the second sub-mass flow controllers 24 a , 24 b , and 24 c , respectively.
- the flow rates of the second process gases controlled by the second sub-mass flow controllers 24 a , 24 b , and 24 c are set such that a quarter (1 ⁇ 4) of the total amount of second process gas set by the second main mass flow controller 22 flows.
- the degree of opening of the fifth sub-mass flow controller 24 d is controlled such that the pressure of the second main gas supply path 21 monitored by the second manometer 51 is zero. In this way, the remainder of the second process gas which does not flow through the three third sub-gas supply paths 23 a , 23 b , and 23 c , that is, the amount of second process gas which corresponds to a quarter (1 ⁇ 4) of the total amount of second process gas flows to the remaining one fourth sub-gas supply path 23 d .
- the second process gases distributed from the second main gas supply path 21 to the three third sub-gas supply paths 23 a , 23 b , and 23 c and the fourth sub-gas supply path 23 d are supplied to the four reactors 10 a , 10 b , 10 c , and 10 d , respectively.
- a predetermined amount of second process gas is distributed and the supply of the second process gas to each of the four reactors 10 a , 10 b , 10 c , and 10 d at a flow rate that is controlled on the basis of the control value of a second flow rate starts at the same time.
- the controller 19 performs control such that four operations, that is, the first process gas supply start operation, the first process gas supply shut off operation, the second process gas supply start operation, and the second process gas supply shut off operation are performed in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the control value of at least one process parameter that is selected from the concentration of the group-III element and the group-V element supplied to the reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the semiconductor wafer W 1 , and the temperature of the semiconductor wafer W 1 is set for at least one of the four reactors 10 a , 10 b , 10 c , and 10 d such that the control value is different from those set for the other reactors and films are grown on the semiconductor wafers W 1 in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the controller 19 independently sets and controls at least one process parameter among the concentration of the group-III element and the group-V element in the four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the semiconductor wafer W 1 , and the temperature of the semiconductor wafer W 1 , on the basis of the control values of the concentration of the group-III element and the group-V element in the four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the semiconductor wafer W 1 , and the temperature of the semiconductor wafer W 1 .
- control values of the concentration of the group-III element and the group-V element, the rotation speed of the semiconductor wafer W 1 , and the temperature of the semiconductor wafer W 1 which have been determined on the basis of the characteristics of the films grown on the test semiconductor wafer W 2 are applied.
- the control value of the concentration of the group-III element and the group-V element is set for a specific reactor such that the control value is different from those set for the other reactors
- the control value of the flow rate of the diluent gas which is supplied from the third main gas supply path 31 to the specific reactor is set such that the control value is different from those set for the other reactors.
- the control value of the concentration of the group-III element and the group-V element in the reactor 10 a is less than those in the other three reactors 10 b , 10 c , and 10 d
- the control value of the flow rate of gas adjusted by the adjustment mass flow meter 134 a among the four adjustment mass flow meters 134 a , 134 b , 134 c , and 134 d increases.
- the flow rate of the diluent gas supplied to the fifth sub-gas supply path 33 a increases and the control value of the concentration of the group-III element and the group-V element for the reactor 10 a is less than those for the other reactors 10 b , 10 c , and 10 d.
- control value of the concentration of the group-III element and the group-V element for the reactor 10 a is greater than those for the other three reactors 10 b , 10 c , and 10 d .
- the control values of the flow rates of gas adjusted by three adjustment mass flowmeter 134 b , 134 c , 134 d among the four adjustment mass flow meters 134 a , 134 b , 134 c , and 134 d are greater than the control value of the flow rate of gas adjusted by the adjustment mass flow meter 134 a .
- the flow rate of the diluent gas supplied to the fifth sub-gas supply path 33 a decreases and the control value of the concentration of the group-III element and the group-V element for the reactor 10 a is greater than those for the other reactors 10 b , 10 c , and 10 d.
- control value of the rotation speed of the semiconductor wafer W 1 for a specific reactor is set to be different from those for the other reactors
- control value of the rotation speed of the rotary driver 114 for the specific reactor is set to be different from those for the other reactors.
- control value of the temperature of the semiconductor wafer W 1 for a specific reactor is set to be different from those for the other reactors
- the control value of power supplied to the heater 116 for the specific reactor is set to be different from those for the other reactors.
- the first process gas, the second process gas, and the diluent gas are supplied to each of the reactors 10 a , 10 b , 10 c , and 10 d by the above-mentioned method and stacked films in which an InGaN film and a GaN film are alternately stacked are formed on a plurality of semiconductor wafers W 1 at the same time.
- the process parameters of the reactors are set to the same control values.
- the process parameters of the reactors are set to the same control values, a variation in the characteristics of the films grown in each reactor occurs.
- the variation in the characteristics of the film is caused by, for example, the difference between the control value of each process parameter and the actual value.
- the thickness and composition of the film are the thickness and composition of the film.
- the processing time of each reactor is constant. In other words, the process gas supply start time and the process gas supply shutoff time are the same in all of the reactors.
- control value of the flow rate of the process gas supplied to each reactor is not independently set. In addition, it is preferable that the control value of the flow rate of the process gas supplied to each reactor is not independently controlled.
- FIG. 3 is a diagram illustrating the function and effect of the vapor phase growth apparatus and the vapor phase growth method according to this embodiment.
- FIG. 3 is a diagram illustrating the relationship among the total flow rate of the process gas, an MQW period, and the indium composition of films when an InGaN film and a GaN film are alternately grown to form an MQW.
- the InGaN film is formed using a mixed gas (first process gas) of TMG and TMI having nitrogen gas as carrier gas and ammonia (second process gas).
- the GaN film is formed using TMG (first process gas) having nitrogen gas as carrier gas and ammonia (second process gas).
- the flow rate of the diluent gas is changed to change the total gas flow rate. Therefore, when the total gas flow rate is high, the concentration of the group-III element and the group-V element which are supplied is low. In contrast, when the total gas flow rate is low, the concentration of the group-III element and the group-V element which are supplied is high.
- the MQW period is a total film thickness when one InGaN film and one GaN film are formed.
- the dependence of a change in the MQW period on a change in the total gas flow rate is large and the dependence of a change in the composition of indium in the film on the change in the total gas flow rate is small.
- the thickness and composition of the film are changed in different ways. Therefore, for example, the flow rate of the diluent gas can be changed to change only the thickness of the film in the same processing time, without changing the composition of the film.
- FIG. 4 is a diagram illustrating the function and effect of the vapor phase growth apparatus and the vapor phase growth method according to this embodiment.
- FIG. 4 is a diagram illustrating the relationship among the rotation speed of the substrate, an MQW period, and the indium composition of films when an InGaN film and a GaN film are alternately grown to form an MQW.
- the process gas used to form the film is the same as that in FIG. 3 .
- the dependence of a change in the MQW period on a change in the rotation speed of the substrate is large and the dependence of a change in the indium composition of the film on the change in the rotation speed of the substrate is small.
- the rotation speed is changed, the thickness and composition of the film are changed in different ways. Therefore, for example, the rotation speed can be changed to change only the thickness of the film in the same processing time, without changing the composition of the film.
- FIG. 5 is a diagram illustrating the function and effect of the vapor phase growth apparatus and the vapor phase growth method according to this embodiment.
- FIG. 5 is a diagram illustrating the relationship among the temperature of the substrate, an MQW period, and the indium composition of films when an InGaN film and a GaN film are alternately grown to form an MQW.
- the process gas used to form the film is the same as that in FIG. 3 .
- the dependence of a change in the MQW period on a change in the temperature of the substrate is small and the dependence of a change in the indium composition of the film on the change in the temperature of the substrate is large.
- the temperature of the substrate is changed, the thickness and composition of the film are changed in different ways. Therefore, for example, the temperature of the substrate can be changed to change only the composition of the film in the same processing time, without changing the thickness of the film.
- the vapor phase growth apparatus and the vapor phase growth method according to this embodiment perform control such that the control value of at least one process parameter selected from the concentration of the group-III element and the group-V element supplied to the reactors, the rotation speed of the substrate, and the temperature of the substrate is independently set for the n reactors and films are formed on the substrates in the n reactors at the same time. Therefore, when films are formed on a plurality of substrates in a plurality of reactors, the characteristics of the films grown in each reactor can be adjusted so as to be matched with each other.
- a vapor phase growth apparatus further includes pressure adjusters which are provided in each of n sub-gas exhaust paths.
- a controller performs control such that the control value of pressure is independently set for the n reactors and films are grown on substrates in the reactors at the same time. This is the difference between the vapor phase growth apparatus according to this embodiment and the vapor phase growth apparatus according to the first embodiment.
- a vapor phase growth method differs from the vapor phase growth method according to the first embodiment in that the control value of pressure in at least one of the n reactors is set to be different from the control values of pressure in the other reactors and films are grown on substrates in the n reactors at the same time.
- FIG. 6 is a diagram illustrating the structure of the vapor phase growth apparatus according to this embodiment.
- the vapor phase growth apparatus includes four sub-gas exhaust paths 15 a , 15 b , 15 c , and 15 d that discharge gas from four reactors 10 a , 10 b , 10 c , and 10 d .
- the vapor phase growth apparatus includes a main gas exhaust path 16 that is connected to the four sub-gas exhaust paths 15 a , 15 b , 15 c , and 15 d .
- a vacuum pump 17 for drawing gas is provided in the main gas exhaust path 16 .
- the vacuum pump 17 is an example of a pump.
- Pressure adjusters 18 a , 18 b , 18 c , and 18 d are provided in the four sub-gas exhaust paths 15 a , 15 b , 15 c , and 15 d , respectively.
- the pressure adjusters 18 a , 18 b , 18 c , and 18 d adjust the internal pressure of the reactors 10 a , 10 b , 10 c , and 10 d to a predetermined value, respectively.
- the pressure adjusters 18 a , 18 b , 18 c , and 18 d are, for example, throttle valves.
- a controller 19 performs control such that the control value of pressure in the four reactors 10 a , 10 b , 10 c , and 10 d is independently set for the four reactors 10 a , 10 b , 10 c , and 10 d and films are grown on substrates in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the controller 19 sets the pressure control value of at least one of the pressure adjusters 18 a , 18 b , 18 c , and 18 d so as to be different from the pressure control values of the other pressure adjusters. Therefore, the controller 19 performs control such that the control value of pressure in at least one of the four reactors 10 a , 10 b , 10 c , and 10 d is different from the control values of pressure in the other reactors. Then, films are grown on substrates in the four reactors 10 a , 10 b , 10 c , and 10 d at the same time.
- the vapor phase growth apparatus and the vapor phase growth method according to this embodiment can independently control the internal pressure of the n reactors at the same time. Therefore, when films are formed on a plurality of substrates in a plurality of reactors at the same time, the characteristics of the films grown in each reactor can be adjusted so as to be matched with each other.
- a vapor phase growth apparatus includes a film thickness measure that can measure the thickness of a film that is being grown in a reactor.
- a controller independently sets at least one of the control values of the concentration of a group-III element and a group-V element supplied to the reactor, the rotation speed of a substrate, and the temperature of the substrate for n reactors, on the basis of the measurement result of the film thickness by the film thickness measure during the growth of the film. This is the difference from the vapor phase growth apparatus according to the first embodiment.
- a vapor phase growth method differs from the vapor phase growth method according to the first embodiment in that at least one of the control values of the concentration of the group-III element and the group-V element supplied to the reactor, the rotation speed of a substrate, and the temperature of the substrate for at least one of the n reactors is changed to a value that is different from those for the other reactors, on the basis of the measurement result of the film thickness by the film thickness measure during the growth of the film, and films are grown on the substrates in the n reactors at the same time.
- FIG. 7 is a diagram schematically illustrating the reactor of the vapor phase growth apparatus according to this embodiment.
- the vapor phase growth apparatus includes a film thickness measure 150 that is provided on a shower plate 101 .
- the film thickness measure 150 can measure the thickness of a film that is being grown on a wafer W.
- the film thickness measure 150 monitors light interference to measure the thickness of the film that is grown on the substrate.
- the controller 19 ( FIG. 1 ) independently sets at least one of the control values of the concentration of the group-III element and the group-V element supplied to four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the wafer W, and the temperature of the wafer W for the four reactors 10 a , 10 b , 10 c , and 10 d , on the basis of the measurement result of the film thickness by the film thickness measure 150 during the growth of the film.
- the controller 19 changes at least one of the control values of the concentration of the group-III element and the group-V element supplied to four reactors 10 a , 10 b , 10 c , and 10 d , the rotation speed of the wafer W, and the temperature of the wafer W for at least one of the four reactors 10 a , 10 b , 10 c , and 10 d to a value that is different from the control values for the other reactor, on the basis of the measurement result of the film thickness by the film thickness measure 150 during the growth of the film. Then, films are grown on substrates in the four reactors 10 a , 10 b , 10 c , and 10 d , on the basis of the changed control value.
- the vapor phase growth apparatus and the vapor phase growth method according to this embodiment change the control value of at least one process parameter among the concentration of the group-III element and the group-V element supplied to the reactors, the rotation speed of the wafer W, and the temperature of the wafer W, on the basis of the measurement result of the film thickness by the film thickness measure 150 during the growth of the film. Then, control is performed such that films are grown on substrates in the n reactors at the same time on the basis of the changed control value. Therefore, even if it is determined that there is an error in the thickness of the film which is being grown, a variation in the characteristics of the films between the reactors can be adjusted such that the characteristics of the films are matched with each other.
- a vapor phase growth apparatus has the same structure as the vapor phase growth apparatus according to the first embodiment, but a vapor phase growth method according to this embodiment differs from the vapor phase growth method according to the first embodiment in that the control value of the power of the heater is reduced to stop a deposition process in at least one of n reactors. The description of the same parts as those in the first embodiment will not be repeated.
- a deposition process is performed in advance on a semiconductor wafer W 1 , which is an example of a substrate, in each of four reactors 10 a , 10 b , 10 c , and 10 d on the basis of the control value of each process parameter.
- the control value of the power of the heater 116 is reduced to 0 kW to stop the deposition process while the process gas is flowing and the deposition process is continuously performed in the reactors 10 b , 10 c , and 10 d without any trouble, similarly to the first embodiment.
- the wafer W can be rotated in a reactor with a trouble, the wafer W may be maintained in a rotated state or the rotation of the wafer W may be stopped.
- the control value of the power of the heater is not necessarily reduced to 0 kW in order to stop the formation of a film on the wafer W and the wafer W may be heated at a low temperature.
- control value of the output of the heater may be set to a value which is less than the control value in the deposition process and at which a process gas reaction does not occur (for example, 0 kW to 5 kW) to stop the formation of a film.
- control value of the temperature of the substrate is set to the temperature which is less than the control value in the deposition process and at which a process gas reaction does not occur (for example, a room temperature to 300° C.) to stop the formation of a film.
- control is independently performed for the reactor with a trouble.
- the invention can be applied to a case in which there is an odd lot (for example, when one lot includes 25 wafers and there are four reactors, the remainder is 1). That is, when a new wafer W is processed, the control value of the power of the heater 116 in the reactor in which the deposition process is not performed may be set to 0 kW or a small value or the control value of the temperature of the substrate may be set to a value that is equal to or greater than the room temperature, while the process gas is flowing to all of the reactors. In this case, it is not necessary to readjust the control values of parameters in the lot and to continuously perform a series of deposition processes.
- process parameters have been described.
- the process parameters are not necessarily limited to the examples.
- any process parameters can be used as long as they can be independently controlled in each reactor at a predetermined time when the deposition process is performed in the n reactors. That is, process parameters other than time can be used.
- the stacked film in which a plurality of first nitride semiconductor films including indium (In) and gallium (Ga) and a plurality of second nitride semiconductor films including gallium (Ga) are stacked on the GaN film is epitaxial grown.
- the invention can be applied to form other group III-V nitride-based semiconductor single-crystal films, such as aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and indium gallium nitride (InGaN) single-crystal films.
- the invention can be applied to a group III-V semiconductor such as GaAs.
- hydrogen gas H 2
- nitrogen gas (N 2 ), argon gas (Ar), helium gas (He), or a combination of the gases can be applied as the carrier gas.
- the process gases are mixed in the shower plate.
- the process gases may be mixed before they flow into the shower plate.
- the process gases may be in a separated state until they are ejected from the shower plate into the reactor.
- the epitaxial apparatus is the vertical single wafer type in which the deposition process is performed for each wafer in the n reactors.
- the application of the n reactors is not limited to the single-wafer-type epitaxial apparatus.
- the invention can be applied a horizontal epitaxial apparatus or a planetary CVD apparatus that simultaneously forms films on a plurality of wafers which revolve on their own axes and around the apparatus.
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US20170314129A1 (en) * | 2016-04-29 | 2017-11-02 | Lam Research Corporation | Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system |
JP7180984B2 (ja) * | 2018-03-01 | 2022-11-30 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
US11021792B2 (en) | 2018-08-17 | 2021-06-01 | Lam Research Corporation | Symmetric precursor delivery |
JP7144283B2 (ja) | 2018-11-09 | 2022-09-29 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
KR20210144888A (ko) * | 2019-05-08 | 2021-11-30 | 가부시키가이샤 뉴플레어 테크놀로지 | 기상 성장 방법 및 기상 성장 장치 |
DE102019129788A1 (de) * | 2019-11-05 | 2021-05-06 | Aixtron Se | Verwendung eines CVD Reaktors zum Abscheiden zweidimensionaler Schichten |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01296613A (ja) | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族化合物半導体の気相成長方法 |
JPH10158843A (ja) | 1996-12-06 | 1998-06-16 | Furukawa Electric Co Ltd:The | 気相成長装置 |
US5968587A (en) * | 1996-11-13 | 1999-10-19 | Applied Materials, Inc. | Systems and methods for controlling the temperature of a vapor deposition apparatus |
JP2002212735A (ja) | 2001-01-10 | 2002-07-31 | Sharp Corp | 有機金属気相成長装置及び材料ガス供給方法 |
US20020142493A1 (en) * | 2001-04-02 | 2002-10-03 | Arvind Halliyal | In-situ thickness measurement for use in semiconductor processing |
JP2003049278A (ja) | 2001-08-06 | 2003-02-21 | Canon Inc | 真空処理方法及び真空処理装置 |
JP2007242875A (ja) | 2006-03-08 | 2007-09-20 | Sharp Corp | 有機金属気相成長装置およびそれを用いた気相成長方法 |
US20130045546A1 (en) | 2011-08-16 | 2013-02-21 | Globalfoundries Inc. | DETECTION OF SURFACE DEFECTS BY OPTICAL INLINE METROLOGY DURING Cu-CMP PROCESS |
US20130104996A1 (en) * | 2011-10-26 | 2013-05-02 | Applied Materials, Inc. | Method for balancing gas flow supplying multiple cvd reactors |
JP2013526017A (ja) | 2010-04-16 | 2013-06-20 | アイクストロン、エスイー | 複数のプロセスチャンバーにて複数の半導体層を同時に堆積する装置及び方法 |
US20160032488A1 (en) | 2014-07-31 | 2016-02-04 | Nuflare Technology, Inc. | Vapor phase growth apparatus and vapor phase growth method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US459A (en) * | 1837-11-20 | Machine foe | ||
US587A (en) * | 1838-01-27 | Machine eor cutting ok | ||
JPH11323559A (ja) * | 1998-05-18 | 1999-11-26 | Japan Aviation Electronics Ind Ltd | Cvd装置 |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
JP2011514660A (ja) * | 2008-01-31 | 2011-05-06 | アプライド マテリアルズ インコーポレイテッド | 閉ループmocvdにおける堆積制御 |
WO2010011013A1 (en) * | 2008-07-23 | 2010-01-28 | New Power Plasma Co., Ltd. | Multi-workpiece processing chamber and workpiece processing system including the same |
US20120244685A1 (en) * | 2011-03-24 | 2012-09-27 | Nuflare Technology, Inc. | Manufacturing Apparatus and Method for Semiconductor Device |
US20130171350A1 (en) * | 2011-12-29 | 2013-07-04 | Intermolecular Inc. | High Throughput Processing Using Metal Organic Chemical Vapor Deposition |
JP6215092B2 (ja) | 2014-03-07 | 2017-10-18 | 黒崎播磨株式会社 | 真空脱ガス装置 |
-
2015
- 2015-08-28 JP JP2015168860A patent/JP6578158B2/ja active Active
-
2016
- 2016-08-23 US US15/244,235 patent/US10385474B2/en active Active
- 2016-08-26 DE DE102016216073.7A patent/DE102016216073B4/de active Active
-
2019
- 2019-06-26 US US16/453,223 patent/US11124894B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01296613A (ja) | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族化合物半導体の気相成長方法 |
US5968587A (en) * | 1996-11-13 | 1999-10-19 | Applied Materials, Inc. | Systems and methods for controlling the temperature of a vapor deposition apparatus |
JPH10158843A (ja) | 1996-12-06 | 1998-06-16 | Furukawa Electric Co Ltd:The | 気相成長装置 |
JP2002212735A (ja) | 2001-01-10 | 2002-07-31 | Sharp Corp | 有機金属気相成長装置及び材料ガス供給方法 |
US20020142493A1 (en) * | 2001-04-02 | 2002-10-03 | Arvind Halliyal | In-situ thickness measurement for use in semiconductor processing |
JP2003049278A (ja) | 2001-08-06 | 2003-02-21 | Canon Inc | 真空処理方法及び真空処理装置 |
JP2007242875A (ja) | 2006-03-08 | 2007-09-20 | Sharp Corp | 有機金属気相成長装置およびそれを用いた気相成長方法 |
JP2013526017A (ja) | 2010-04-16 | 2013-06-20 | アイクストロン、エスイー | 複数のプロセスチャンバーにて複数の半導体層を同時に堆積する装置及び方法 |
US20130045546A1 (en) | 2011-08-16 | 2013-02-21 | Globalfoundries Inc. | DETECTION OF SURFACE DEFECTS BY OPTICAL INLINE METROLOGY DURING Cu-CMP PROCESS |
US20130104996A1 (en) * | 2011-10-26 | 2013-05-02 | Applied Materials, Inc. | Method for balancing gas flow supplying multiple cvd reactors |
US20160032488A1 (en) | 2014-07-31 | 2016-02-04 | Nuflare Technology, Inc. | Vapor phase growth apparatus and vapor phase growth method |
JP2016033997A (ja) | 2014-07-31 | 2016-03-10 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
Non-Patent Citations (1)
Title |
---|
Office Action dated Mar. 19, 2019, in Japanese Patent Application No. 2015-168660, filed Aug. 28, 2015, w/English-language Translation. |
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JP6578158B2 (ja) | 2019-09-18 |
JP2017045927A (ja) | 2017-03-02 |
US20170062212A1 (en) | 2017-03-02 |
DE102016216073B4 (de) | 2020-02-20 |
DE102016216073A1 (de) | 2017-03-02 |
US20190316274A1 (en) | 2019-10-17 |
US11124894B2 (en) | 2021-09-21 |
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