JP7180984B2 - 気相成長方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B25/02—Epitaxial-layer growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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Description
前記第2のガリウム含有窒化膜を形成した後に前記第2の基板を前記反応室から搬出することなく連続して、前記シャワープレートから前記第2の混合ガスを前記反応室の中に供給しながら前記第2の基板を前記第2の回転数で回転させ、前記第2の基板の上に第2の窒化インジウムアルミニウム膜を形成することが好ましい。
第1の実施形態の気相成長方法は、反応室に第1の基板を搬入し、インジウムを含むガス、アルミニウムを含むガス、及び、窒素化合物を含むガスが混合された第1の混合ガスを生成し、第1の混合ガスを反応室の中に供給しながら第1の基板を300rpm以上の第1の回転数で回転させて、第1の基板の上に第1の窒化インジウムアルミニウム膜を形成する。さらに、少なくともガリウムを含むガス及び窒素化合物を含むガスが混合された第2の混合ガスを生成し、第2の混合ガスを反応室の中に供給しながら第1の基板を300rpm以上の第2の回転数で回転させて、第1の基板の上に第1のガリウム含有窒化膜を形成し、第1のガリウム含有窒化膜を形成した後、第1の基板を反応室から搬出することなく連続して第1の窒化インジウムアルミニウム膜を形成する。
第2の実施形態の気相成長方法は、第1の窒化ガリウム膜を形成した後、第1の窒化インジウムアルミニウム膜を形成する前に、第1の基板の上に、厚さが第1の窒化インジウムアルミニウム膜の厚さよりも薄い窒化アルミニウム膜又は窒化アルミニウムガリウム膜を形成する以外は、第1の実施形態と同様である。以下、第1の実施形態と重複する内容については、一部記述を省略する。
Claims (7)
- 反応室に第1の基板を搬入し、
少なくともガリウムを含むガス及び窒素化合物を含むガスが混合された第1の混合ガスを生成し、
前記反応室に前記第1の基板を搬入した後に、前記反応室の上部に設けられたシャワープレートと前記第1の基板の第1の表面との間の距離が3cm以上の状態で、前記シャワープレートから前記第1の混合ガスを前記反応室の中に供給しながら前記第1の基板を300rpm以上の第1の回転数で回転させ、前記第1の基板の上に第1のガリウム含有窒化膜を形成し、
インジウムを含むガス、アルミニウムを含むガス、及び、前記窒素化合物を含むガスが混合された第2の混合ガスを生成し、
前記第1のガリウム含有窒化膜を形成した後に前記第1の基板を前記反応室から搬出することなく連続して、前記第2の混合ガスを前記反応室の中に供給しながら前記第1の基板を300rpm以上の前記第1の回転数よりも大きい第2の回転数で回転させて、前記第1の基板の上に第1の窒化インジウムアルミニウム膜を形成する気相成長方法。 - 前記反応室は、基板を一枚ずつ成膜処理する反応室であり、前記第1の基板の回転は自転である請求項1記載の気相成長方法。
- 前記第1のガリウム含有窒化膜を形成した後、前記第1の窒化インジウムアルミニウム膜の厚さよりも薄い窒化アルミニウム膜又は窒化アルミニウムガリウム膜を形成し、
前記窒化アルミニウム膜又は前記窒化アルミニウムガリウム膜を形成した後、前記第1の窒化インジウムアルミニウム膜を形成する請求項1又は請求項2記載の気相成長方法。 - 前記第1の窒化インジウムアルミニウム膜を形成した後に、前記第1の基板を前記反応室から搬出し、
前記反応室の洗浄を行うことなく、第2の基板を前記反応室に搬入し、
前記反応室に前記第2の基板を搬入した後に、前記シャワープレートから前記第1の混合ガスを前記反応室の中に供給しながら前記第2の基板を前記第1の回転数で回転させ、前記第2の基板の上に第2のガリウム含有窒化膜を形成し、
前記第2のガリウム含有窒化膜を形成した後に前記第2の基板を前記反応室から搬出することなく連続して、前記シャワープレートから前記第2の混合ガスを前記反応室の中に供給しながら前記第2の基板を前記第2の回転数で回転させ、前記第2の基板の上に第2の窒化インジウムアルミニウム膜を形成する請求項1ないし請求項3いずれか一項記載の気相成長方法。 - 前記シャワープレートは表面に複数のガス放出孔を有し、最近接の放出孔の間隔が1mm以上15mm以下である請求項1ないし請求項4いずれか一項記載の気相成長方法。
- 前記シャワープレートは表面に凹凸部分を有する請求項1ないし請求項5いずれか一項記載の気相成長方法。
- 前記凹凸部分の表面と水平方向とのなす角度が45度以下である請求項6記載の気相成長方法。
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JP2018036381A JP7180984B2 (ja) | 2018-03-01 | 2018-03-01 | 気相成長方法 |
TW110137658A TWI795020B (zh) | 2018-03-01 | 2019-02-26 | 氣相成長方法 |
TW108106383A TWI745656B (zh) | 2018-03-01 | 2019-02-26 | 氣相成長方法 |
US16/288,244 US11072856B2 (en) | 2018-03-01 | 2019-02-28 | Vapor phase growth method |
US17/351,757 US20210310118A1 (en) | 2018-03-01 | 2021-06-18 | Vapor phase growth method |
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