JP2012169622A - 薄膜形成のための方法とシステム - Google Patents
薄膜形成のための方法とシステム Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/4554—Plasma being used non-continuously in between ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】実施態様において、二成分化合物のエピタキシャル薄膜を形成するためのシステムと方法を含むエピタキシャル薄膜形成ためのシステムと方法が提供されている。本発明の実施形態の方法とシステムは、例えば、GaN、InNおよびAlN、ならびにこれらの化合物の混合合金、例えば、(In, Ga)N、(Al, Ga)N、(In, Ga, Al)Nのような直接の禁止帯半導体二元素化合物エピタキシャル薄膜形成のために用いられる。前記方法および装置は、準単分子層薄膜蒸着の急速反復を可能にする多段階蒸着プロセスおよびシステムを含む。
【選択図】図1
Description
他の実施形態において、反応空間を基板へ持って来ることによって基板を反応空間に配置してもよい(例えば、反応空間を有する反応チャンバを回転させることによって)。
参照文献による取込み
第III‐V族薄膜生成のための方法
他の実施形態において、GaInN薄膜を形成する方法が提供される。他の実施形態において、InGaAlN薄膜を形成する方法が提供される。
他の実施形態において、第1反応空間内で基板は、1つ以上のAl、GaおよびIn含有先駆体のような多発性第III族金属先駆体と接触する。他の実施形態において、基板は分離した反応空間内の異なる第III族金属先駆体と接触する。一実施形態において、基板は第III族金属先駆体への露出間に第V族先駆体と接触する。
一実施形態において、前記基板は準単分子層適用範囲にて第III族金属薄膜を形成するために必要な時間内で接触する。他の実施形態において、第1反応空間の基板を第III族金属先駆体と接触させることにより、約1単層(ML)未満、または0.95ML未満、または0.9ML未満、または0.85ML未満、または0.8ML未満、または0.75ML未満、または0.7ML未満、または0.65ML未満、または0.6ML未満、0.55ML未満、または0.5ML未満、または0.45ML未満、または0.40ML未満、または0.35ML未満、または0.30ML未満、または0.25ML未満、または0.15ML未満、または0.10ML未満、または0.05ML未満の厚さを有する第III族金属層を形成する。他の実施形態において、第1反応空間内の基板を第III族先駆体と接触させることにより、約0.05ML、または0.1ML、または0.15ML、または0.2ML、または0.25ML、または0.3ML、または0.35ML、または0.4ML、または0.45ML、または0.5ML、または0.55ML、または0.6ML、または0.65ML、または0.7ML、または0.75ML、または0.8ML、または0.85ML、または0.90ML、または0.95ML、または1MLに及ぶ厚さを有する第III族金属層を形成する。他の実施形態において、第1反応空間の基板を第III族金属先駆体と接触させることにより、準単分子層適用範囲にて第III族金属層を形成する。
第III‐V族薄膜形成のシステム
第III‐V族薄膜
実施例
Claims (66)
- 第III−V族薄膜を形成する方法であって、
第1反応空間内の基板を準単分子層適用範囲にて第III族先駆体と接触させて第III族金属薄膜を形成し;そして、
第2反応空間内の基板を第V族先駆体と接触させて第III−V族薄膜を形成することを含む、方法。 - 前記第1反応空間が前記第2反応空間から流体的に分離されている、請求項1に記載の方法。
- 前記基板を第III族先駆体と接触させることにより、基板上に第III族金属の非自己限定層を形成する、請求項1に記載の方法。
- 前記第V族先駆体が窒素含有種を含む、請求項1に記載の方法。
- 前記窒素含有種が窒素の活性中性種を含む、請求項4に記載の方法。
- 前記窒素の活性中性種が、分子状窒素(A3Σu +)の最低励起状態を有する窒素種である、請求項5に記載の方法。
- 前記窒素含有種がN2とH2との混合物を含む、請求項4に記載の方法。
- 前記窒素含有種がN2, NH3および N2H4から選択される1つ以上の種を含む、請求項4に記載の方法。
- 前記第V族先駆体が第V族含有分子のプラズマ活性化種を含む、請求項1に記載の方法。
- 前記第V族先駆体がプラズマ活性化窒素含有種を含む、請求項9に記載の方法。
- 前記第2反応空間の前記基板を第V族先駆体と接触させることが第V族先駆体および水素含有種を提供することを含む、請求項1に記載の方法。
- 前記第V族先駆体がN2、NH3および N2H4から選択される、請求項11に記載の方法。
- 前記第III族先駆体がガリウム含有種を含む、請求項1に記載の方法。
- 前記第III族先駆体がホウ素(B)、アルミニウム(Al)、ガリウム(Ga)およびインジウム(In)から選択される1つ以上の種を含む、請求項1に記載の方法。
- 前記第III族先駆体が金属有機種を含む、請求項1に記載の方法。
- 前記第1反応空間内の前記基板を第III族先駆体と接触させることにより約1単層(ML)に及ぶ厚さを有する第III族半導体層を形成する、請求項1に記載の方法。
- 前記第2反応空間内の前記基板を第V族先駆体と接触させることにより約1単層(ML)未満の厚さを有する第III−V 族薄膜を形成する、請求項16に記載の方法。
- 前記第1反応空間内の前記基板を第III族先駆体と接触させることにより約1単層(ML)未満の厚さを有する第III族金属層を形成する、請求項1に記載の方法。
- 前記第2反応空間内の前記基板を第V族先駆体と接触させることにより1単層(ML)未満の厚さを有する第III−V族薄膜を形成する、請求項18に記載の方法。
- 前記第III−V族薄膜が第III族金属窒化物薄膜である、請求項1に記載の方法。
- 前記第III−V族薄膜が窒化ガリウム薄膜である、請求項20に記載の方法。
- 前記第III−V族膜を形成する間に前記基板を加熱することを更に含む、請求項1に記載の方法。
- 前記第2反応空間の前記基板を第V族先駆体と接触させるに先立ち、第III族金属薄膜を第3反応空間内の水素含有種と接触させることを更に含む、請求項1に記載の方法。
- 前記水素含有種が水素(H2)および水素の励起種から選択される、請求項23に記載の方法。
- 第III−V族薄膜を第3反応空間内の水素含有種と接触させることを更に含む、請求項1に記載の方法。
- 前記水素含有種が水素(H2)および水素の励起種から選択される、請求項25に記載の方法。
- 前記第III−V族薄膜が、原子間力顕微鏡(AFM)による測定で10ナノメータ(nm)以下の高低差実効値を有する、請求項1に記載の方法。
- 前記高低差実効値が5nm以下である、請求項27に記載の方法。
- 前記高低差実効値が2nm以下である、請求項28に記載の方法。
- 前記第III−V族薄膜が約1010転位/cm2に及ぶ欠陥密度を有する、請求項1に記載の方法。
- 前記第III−V族薄膜が約600秒角以下の(0002)または(1012)X線反射のオメガ走査半最大値における全値幅を有する、請求項1に記載の方法。
- 前記III−V族薄膜が、InxGa(1−x)Nを含み、「x」は0より大きく、1未満の数である、請求項1に記載の方法。
- 「x」が約0.99に及ぶ、請求項32に記載の方法。
- 請求項1の方法によって形成される、第III−V族薄膜デバイス。
- 請求項1の方法によって形成される第III−V族薄膜を有する発光ダイオード(LED)。
- 請求項1の方法によって形成される第III−V族薄膜を有する光起電力太陽電池。
- 請求項1の方法によって形成される第III−V族薄膜を有する量子井戸型ヘテロ構造デバイス。
- 請求項1の方法によって形成される第III−V族薄膜を有する多重量子井戸型ヘテロ構造デバイス。
- 前記第III−V族薄膜が、原子間力顕微鏡(AFM)による測定で10ナノメータ(nm)以下の高低差実効値を有する、請求項34、35、36、37または38に記載のデバイス。
- 前記高低差実効値が5nm以下である、請求項39に記載のデバイス。
- 前記高低差実効値が2nm以下である、請求項40に記載のデバイス。
- 前記第III−V族薄膜が約1010転位/cm2に及ぶ欠陥密度を有する、請求項34、35、36、37または38に記載のデバイス。
- 前記第III−V族薄膜が約600秒角以下の(0002)または(1012)X線反射のオメガ走査半最大値における全値幅を有する、請求項34、35、36、37または38に記載のデバイス。
- 基板上に第III−V族薄膜を形成する方法であって、
(a) 第1反応空間内に基板を配置すること;
(b) 第1反応空間内で基板を第1の第III族先駆体および第1の第V族先駆体のうちの1つと接触させること;
(c) 第2反応空間内に前記基板を配置すること;
(d) 第2反応空間内で基板を第1の第III族先駆体および第1の第V族先駆体のうちの他の1つと接触させること;および、
(e)予め定められた厚さの第III−V族薄膜が形成されるまでステップ(a)〜(d)を繰り返すこと、を含み、
準単分子層適用範囲にて前記基板を他の第III族先駆体と接触させ、第III族金属薄膜を形成する、方法。 - 前記第V族先駆体が窒素含有種を含む、請求項44に記載の方法。
- 前記1つ以上の第III族金属がホウ素、アルミニウム、ガリウムおよびインジウムから選択される、請求項44に記載の方法。
- 前記第III−V族薄膜が窒化ガリウム薄膜である、請求項44に記載の方法。
- 前記第III−V族薄膜がインジウム・ガリウム窒化物薄膜である、請求項44に記載の方法。
- 前記第III−V族薄膜が窒化アルミニウム薄膜、窒化インジウム薄膜、アルミニウム・ガリウム窒化物薄膜またはインジウム・ガリウム・アルミニウム窒化物薄膜である、請求項44に記載の方法。
- 前記第III−V族薄膜が窒化ガリウムおよびインジウム・ガリウム窒化物のエピタキシャル層を含む、請求項44に記載の方法。
- 前記第III−V族薄膜が窒化アルミニウム、アルミニウム・ガリウム窒化物、窒化ガリウム、インジウム・ガリウム窒化物またはアルミニウム・インジウム・ガリウム窒化物のエピタキシャル層を含む、請求項44に記載の方法。
- 第3反応空間に前記基板を配置し、前記基板を第V族先駆体と接触させるに先立ち、前記第III族金属薄膜を水素含有種と接触させることを更に含む、請求項44に記載の方法。
- 前記水素含有種が、水素(H2)および水素の励起種から選択される、請求項52に記載の方法。
- 第3反応空間に前記基板を配置して前記第III−V族薄膜を水素含有種と接触させることを更に含む、請求項44に記載の方法。
- 前記水素含有種が水素(H2)および水素の励起種から選択される、請求項54に記載の方法。
- 基板上に第III−V族薄膜を形成する方法であって、
基板を第III族金属先駆体および第V族先駆体と交互におよび逐次に接触させることを含み、
前記基板は、分離した反応空間内で第III族金属先駆体および第V族先駆体と接触し、そして、
前記基板を第III族金属先駆体と接触させて準単分子層適用範囲にて第III族金属薄膜を形成する、方法。 - 基板上に第III−V族薄膜を形成する方法であって、
基板上に第III族金属層を提供すること、前記第III族金属層は予湿法適用範囲にて1つ以上の第III族金属を有する;そして、
前記第III族金属層を第V族先駆体と接触させること、を含む方法。 - ターゲット上に第III−V族薄膜を配置する装置であって、
第1反応空間および第2反応空間、第1反応空間は、流体的に第2反応空間と分離し;
ターゲットを各第1および第2の反応空間と接触させているサセプタ;および、
第1露出において第III族先駆体を第1反応空間へ導き、第2露出において第V族先駆体を第2反応空間へ導くための制御器、第1露出は、準単分子層適用範囲にて前記ターゲット上へ第III族金属層を提供する、を含む、装置。 - 前記第2露出が、準単分子層適用範囲にて第III−V族薄膜を提供する、請求項58に記載の装置。
- 流体的に前記第1および第2反応空間から分離している第3反応空間を更に含み、前記第3反応空間は前記基板を水素含有種と接触させる、請求項58に記載の装置。
- 流体的に前記第1、第2および第3反応空間から分離している第4反応空間を更に含み、前記第4反応空間では前記ターゲット上に形成した第III−V族薄膜の膜特性の1つ以上を測定する、請求項60に記載の装置。
- 流体的に前記第1、第2反応空間から分離している第3反応空間を更に含み、前記第3反応空間では前記ターゲット上に形成した第III−V族薄膜の膜特性の1つ以上を測定する、請求項58に記載の装置。
- 前記サセプタが、前記サセプタを有する平面に垂直な軸の周りを回転可能である、請求項58に記載の装置。
- 前記サセプタが、前記サセプタを有する平面に垂直な軸に沿って上方位置および下方位置の間で移動可能である、請求項63に記載の装置。
- 前記第1反応空間および前記第2反応空間が隔壁によって分離されている、請求項58に記載の装置。
- 前記隔壁が前記サセプタの中心軸から放射状に延びている、請求項65に記載の装置。
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Also Published As
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KR20120092043A (ko) | 2012-08-20 |
EP2487276A1 (en) | 2012-08-15 |
US20120208352A1 (en) | 2012-08-16 |
US20130118404A1 (en) | 2013-05-16 |
US8143147B1 (en) | 2012-03-27 |
US8377803B2 (en) | 2013-02-19 |
US20120208357A1 (en) | 2012-08-16 |
TW201237207A (en) | 2012-09-16 |
US8318590B2 (en) | 2012-11-27 |
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