SG170094A1 - Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices - Google Patents

Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices

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Publication number
SG170094A1
SG170094A1 SG201101725-8A SG2011017258A SG170094A1 SG 170094 A1 SG170094 A1 SG 170094A1 SG 2011017258 A SG2011017258 A SG 2011017258A SG 170094 A1 SG170094 A1 SG 170094A1
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SG
Singapore
Prior art keywords
group iii
nanowire
nanowires
applications
devices
Prior art date
Application number
SG201101725-8A
Inventor
Stephen M Hersee
Xin Wang
Xinyu Sun
Original Assignee
Stc Unm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US78083306P priority Critical
Priority to US79833706P priority
Priority to US80815306P priority
Priority to US88936307P priority
Application filed by Stc Unm filed Critical Stc Unm
Publication of SG170094A1 publication Critical patent/SG170094A1/en

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    • Y10S977/815Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/816III-N based compounds, e.g. AlxGayInzN
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612Composite web or sheet

Abstract

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core- shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
SG201101725-8A 2006-03-10 2007-03-09 Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices SG170094A1 (en)

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Families Citing this family (269)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713352B2 (en) * 2001-06-29 2010-05-11 University Of Louisville Research Foundation, Inc. Synthesis of fibers of inorganic materials using low-melting metals
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7192849B2 (en) * 2003-05-07 2007-03-20 Sensor Electronic Technology, Inc. Methods of growing nitride-based film using varying pulses
US8029186B2 (en) * 2004-11-05 2011-10-04 International Business Machines Corporation Method for thermal characterization under non-uniform heat load
EP2410582B1 (en) * 2005-05-24 2019-09-04 LG Electronics Inc. Nano rod type light emitting diode and method for fabricating a nano rod type light emitting diode
CN101331249B (en) 2005-12-02 2012-12-19 晶体公司 Doped aluminum nitride crystals and methods of making them
US7638416B2 (en) * 2005-12-13 2009-12-29 Versatilis Llc Methods of making semiconductor-based electronic devices on a wire and articles that can be made using such devices
US7700471B2 (en) * 2005-12-13 2010-04-20 Versatilis Methods of making semiconductor-based electronic devices on a wire and articles that can be made thereby
US7871912B2 (en) * 2005-12-13 2011-01-18 Versatilis Llc Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures
KR101375435B1 (en) * 2006-03-08 2014-03-17 큐나노 에이비 Method for metal-free synthesis of epitaxial semiconductor nanowires on si
JP5592610B2 (en) * 2006-03-10 2014-09-17 エステイーシー.ユーエヌエム Nanowire manufacturing method, group III nitride nanowire array, and GaN substrate structure
US7968359B2 (en) * 2006-03-10 2011-06-28 Stc.Unm Thin-walled structures
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US8012257B2 (en) * 2006-03-30 2011-09-06 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US7741647B2 (en) * 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US8483820B2 (en) * 2006-10-05 2013-07-09 Bioness Inc. System and method for percutaneous delivery of electrical stimulation to a target body tissue
EP2091862B1 (en) * 2006-12-22 2019-12-11 QuNano AB Elevated led and method of producing such
CN102255018B (en) * 2006-12-22 2013-06-19 昆南诺股份有限公司 Nanostructured LED array with collimating reflectors and manufacture method thereof
US8183587B2 (en) * 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US7829443B2 (en) * 2007-01-12 2010-11-09 Qunano Ab Nitride nanowires and method of producing such
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (en) 2007-01-17 2019-12-31 晶体公司 Defect reduction in seeded aluminum nitride crystal growth
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (en) * 2007-01-26 2011-06-22 晶体公司 Thick pseudomorphic nitride epitaxial layers
US8907456B2 (en) * 2007-03-21 2014-12-09 Olambda, Inc. Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography
US9106056B1 (en) * 2007-04-25 2015-08-11 Stc.Unm Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices
US8964020B2 (en) * 2007-04-25 2015-02-24 Stc.Unm Solid-state microscope for selectively imaging a sample
US7759689B2 (en) * 2007-05-07 2010-07-20 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Photonic crystal structures and methods of making and using photonic crystal structures
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
KR100904588B1 (en) * 2007-07-05 2009-06-25 삼성전자주식회사 Method of preparing core/shell type Nanowire, Nanowire prepared therefrom and Display device comprising the same
WO2009031276A1 (en) * 2007-09-03 2009-03-12 Sophia School Corporation Iii nitride structure and method for manufacturing iii nitride semiconductor fine columnar crystal
KR100972842B1 (en) * 2007-09-11 2010-07-28 포항공과대학교 산학협력단 Nanodevice comprsising a nanorod and method for manufacturing the same
JP5015705B2 (en) * 2007-09-18 2012-08-29 ルネサスエレクトロニクス株式会社 Interlayer insulating film forming method, interlayer insulating film, semiconductor device, and semiconductor manufacturing apparatus
US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
KR101541560B1 (en) * 2007-10-26 2015-08-03 큐나노 에이비 Nanowire growth on dissimilar material
DE102007052071A1 (en) 2007-10-30 2009-05-07 Stada Arzneimittel Ag Stabilized atorvastatin
WO2009100458A2 (en) * 2008-02-08 2009-08-13 Clean Cell International Inc. Composite nanorod-based structures for generating electricity
GB2458442A (en) * 2008-02-29 2009-09-23 Univ Dublin City Wide band gap nanostructured devices
DE102008015333A1 (en) * 2008-03-20 2009-10-01 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Nanowire structural element
JP2011524322A (en) * 2008-05-06 2011-09-01 キマ テクノロジーズ, インコーポレイテッド Group III nitride template and related heterostructures, devices and methods for constructing the same
US8390005B2 (en) * 2008-06-30 2013-03-05 Hewlett-Packard Development Company, L.P. Apparatus and method for nanowire optical emission
US8669574B2 (en) 2008-07-07 2014-03-11 Glo Ab Nanostructured LED
SE533090C2 (en) * 2008-07-09 2010-06-22 Qunano Ab Nanostructured LED
US8138493B2 (en) * 2008-07-09 2012-03-20 Qunano Ab Optoelectronic semiconductor device
KR100956499B1 (en) * 2008-08-01 2010-05-07 주식회사 실트론 Compound semiconductor substrate having metal layer, method for manufacturing the same, and compound semiconductor device using the same
US8058627B2 (en) * 2008-08-13 2011-11-15 Wisys Technology Foundation Addressable transmission electron microscope grid
WO2010022064A1 (en) * 2008-08-21 2010-02-25 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
WO2010023921A1 (en) * 2008-09-01 2010-03-04 学校法人上智学院 Semiconductor optical element array and manufacturing method therefore
JP5655228B2 (en) * 2008-09-01 2015-01-21 国立大学法人北海道大学 Manufacturing method of semiconductor structure
US8421052B2 (en) * 2008-09-02 2013-04-16 Georgia Tech Research Corporation Transverse force, pressure and vibration sensors using piezoelectric nanostructures
US9515218B2 (en) * 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8558274B2 (en) * 2008-10-21 2013-10-15 Samsung Electronics Co., Ltd. Light-emitting diode and method of manufacturing the same
WO2010062644A2 (en) * 2008-10-28 2010-06-03 The Regents Of The University Of California Vertical group iii-v nanowires on si, heterostructures, flexible arrays and fabrication
US20100148221A1 (en) * 2008-11-13 2010-06-17 Zena Technologies, Inc. Vertical photogate (vpg) pixel structure with nanowires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
JP2010135185A (en) * 2008-12-04 2010-06-17 Japan Science & Technology Agency Manufacturing method for electron emitting element, and electron emitting element
WO2010065860A2 (en) 2008-12-04 2010-06-10 The Regents Of The Univerity Of California Electron injection nanostructured semiconductor material anode electroluminescence method and device
SE533531C2 (en) * 2008-12-19 2010-10-19 Glo Ab The optoelectronic device
KR20100073757A (en) * 2008-12-23 2010-07-01 삼성전자주식회사 Light emitting device using micro-rod and method of manufacturing the light emitting device
US8237151B2 (en) * 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
KR101563686B1 (en) * 2009-01-15 2015-10-27 삼성전자주식회사 Method of manufacturing semiconductor light emitting device
CA2653581A1 (en) 2009-02-11 2010-08-11 Kenneth Scott Alexander Butcher Migration and plasma enhanced chemical vapour deposition
US8148264B2 (en) 2009-02-25 2012-04-03 California Institue Of Technology Methods for fabrication of high aspect ratio micropillars and nanopillars
US20110297956A1 (en) * 2009-03-03 2011-12-08 Panasonic Corporation Method for manufacturing gallium nitride compound semiconductor, and semiconductor light emitting element
JP5543578B2 (en) * 2009-03-23 2014-07-09 本田技研工業株式会社 Quantum confined solar cells fabricated by atomic layer deposition
WO2010110733A1 (en) * 2009-03-25 2010-09-30 Glo Ab A schottky device
KR101562060B1 (en) * 2009-04-06 2015-10-21 삼성전자주식회사 Apparatus for generating electrical energy and method for manufacturing the same
WO2010118321A2 (en) * 2009-04-10 2010-10-14 Clean Cell International Inc. Composite nanorod-based structures for generating electricity
KR101603777B1 (en) * 2009-04-16 2016-03-15 삼성전자주식회사 White light emitting diode
US8299341B2 (en) * 2009-05-13 2012-10-30 The California Institute Of Technology Fabrication of vertically aligned metallic nanopillars
KR101061150B1 (en) * 2009-05-22 2011-08-31 서울대학교산학협력단 Light emitting device and manufacturing method thereof
US20100304061A1 (en) * 2009-05-26 2010-12-02 Zena Technologies, Inc. Fabrication of high aspect ratio features in a glass layer by etching
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
EP2446467A4 (en) 2009-06-26 2014-07-02 California Inst Of Techn Methods for fabricating passivated silicon nanowires and devices thus obtained
TWM386591U (en) * 2009-07-30 2010-08-11 Sino American Silicon Prod Inc Nano patterned substrate and epitaxial structure
US20110068368A1 (en) * 2009-09-18 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device comprising a honeycomb heteroepitaxy
WO2011041762A2 (en) * 2009-10-02 2011-04-07 South Dakota State University Semiconductor nanoparticle/nanofiber composite electrodes
US8791470B2 (en) * 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
JP5094824B2 (en) * 2009-10-19 2012-12-12 シャープ株式会社 Bar-shaped structure light emitting device, backlight, illumination device and display device
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
KR101134840B1 (en) 2009-10-26 2012-04-13 엘지이노텍 주식회사 Light Emitting Device and Method of Manufacturing Thereof
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US8809093B2 (en) 2009-11-19 2014-08-19 California Institute Of Technology Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires
US9018684B2 (en) 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
US9112085B2 (en) 2009-11-30 2015-08-18 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency broadband semiconductor nanowire devices
JP2011135058A (en) * 2009-11-30 2011-07-07 Hokkaido Univ Solar cell element, color sensor, and method of manufacturing light emitting element and light receiving element
US9306099B2 (en) 2009-12-01 2016-04-05 Samsung Electronics Co., Ltd. Material including graphene and an inorganic material and method of manufacturing the material
JP5943339B2 (en) * 2009-12-01 2016-07-05 国立大学法人北海道大学 Light emitting element and manufacturing method thereof
JP2011119617A (en) * 2009-12-07 2011-06-16 Sharp Corp Method of manufacturing rod type light emitting device
JP5378184B2 (en) * 2009-12-07 2013-12-25 シャープ株式会社 Bar-shaped structure light emitting device, backlight, illumination device and display device
JP4912454B2 (en) * 2009-12-07 2012-04-11 シャープ株式会社 Method for manufacturing rod-shaped structure light emitting element, rod-shaped structure light emitting element, backlight, illumination device, and display device
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8889455B2 (en) * 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8299472B2 (en) * 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US20110140071A1 (en) * 2009-12-14 2011-06-16 Olga Kryliouk Nano-spherical group iii-nitride materials
US20110175126A1 (en) * 2010-01-15 2011-07-21 Hung-Chih Yang Light-emitting diode structure
TWI479688B (en) * 2010-01-15 2015-04-01 Epistar Corp Light-emitting diode device
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
JP5911856B2 (en) 2010-06-18 2016-04-27 グロ アーベーGlo Ab Nanowire LED structure and method of fabricating the same
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
AU2011269874B2 (en) * 2010-06-24 2015-03-26 Glo Ab Substrate with buffer layer for oriented nanowire growth
JP5806734B2 (en) 2010-06-30 2015-11-10 クリスタル アイエス,インコーポレーテッドCrystal Is,Inc. Large single crystal growth of aluminum nitride by thermal gradient control
US8890271B2 (en) * 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
KR101650720B1 (en) * 2010-08-04 2016-09-06 삼성전자주식회사 Nanorod-based semiconductor light emitting device and method of manufacturing the same
CN101922015B (en) * 2010-08-25 2012-07-04 中国科学院半导体研究所 Fabricating method of InGaN (Indium-Gallium-Nitrogen) semiconductor photoelectrode
US9190590B2 (en) 2010-09-01 2015-11-17 Sharp Kabushiki Kaisha Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode
JP4927223B2 (en) * 2010-09-01 2012-05-09 シャープ株式会社 Light emitting element and its manufacturing method, light emitting device manufacturing method, lighting device, backlight and display device
KR101636915B1 (en) * 2010-09-03 2016-07-07 삼성전자주식회사 Semiconductor compound structure and method of manufacturing the same using graphene or carbon nanotubes, and seciconductor device including the semiconductor compound
JP5940069B2 (en) * 2010-09-14 2016-06-29 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Emitting nanowire optoelectronic device
KR101710159B1 (en) 2010-09-14 2017-03-08 삼성전자주식회사 Group III nitride nanorod light emitting device and Manufacturing method for the same
KR101691906B1 (en) * 2010-09-14 2017-01-02 삼성전자주식회사 Manufacturing method for Nanorod light emitting device
US9721810B2 (en) 2010-10-28 2017-08-01 University Of Utah Research Foundation Methods for enhancing P-type doping in III-V semiconductor films
EP2636078B1 (en) * 2010-11-04 2015-12-30 Koninklijke Philips N.V. Solid state light emitting devices based on crystallographically relaxed structures
KR101762176B1 (en) 2010-11-23 2017-07-27 삼성전자 주식회사 Nano rod light emitting device
TWI459460B (en) * 2010-11-24 2014-11-01 Univ Nat Taiwan Method for forming semiconductor nano-micro rods and applications thereof
WO2012075461A1 (en) * 2010-12-02 2012-06-07 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices based on repetitive multiple step growth-etch sequence
US9142619B2 (en) 2010-12-08 2015-09-22 El-Seed Corporation Group III nitride semiconductor device and method for manufacturing the same
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
KR101718067B1 (en) * 2010-12-15 2017-03-20 삼성전자 주식회사 Light emitting device and method of manufacturing the same
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
TWI540754B (en) * 2010-12-27 2016-07-01 鴻海精密工業股份有限公司 Led and making method thereof
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
CN102593273B (en) * 2011-01-17 2015-09-30 晶元光电股份有限公司 The formation method of light-emitting diode assembly and board structure
US8143147B1 (en) 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
US20120217474A1 (en) * 2011-02-25 2012-08-30 Agency For Science, Technology And Research Photonic device and method of making the same
FR2973936B1 (en) 2011-04-05 2014-01-31 Commissariat Energie Atomique Method of selective growth on semiconductor structure
JP2012222274A (en) * 2011-04-13 2012-11-12 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of nanopillar
TW201246599A (en) * 2011-05-06 2012-11-16 Nanocrystal Asia Inc Taiwan Semiconductor substrate and fabricating method thereof
FR2975532B1 (en) 2011-05-18 2013-05-10 Commissariat Energie Atomique Electrical connection in series of light emitting nanowires
WO2013130027A1 (en) * 2011-05-20 2013-09-06 Zena Technologies, Inc. Light absorption and filtering properties of vertically oriented semiconductor nano wires
CN102263171B (en) * 2011-06-24 2013-10-09 清华大学 Epitaxial substrate, preparation method for epitaxial substrate and application of epitaxial substrate as grown epitaxial layer
US8895104B2 (en) * 2011-07-01 2014-11-25 International Business Machines Corporation Thin film composite membranes embedded with molecular cage compounds
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN102916095A (en) * 2011-07-31 2013-02-06 华新丽华股份有限公司 led
US9178446B2 (en) * 2011-08-30 2015-11-03 Georgia Tech Research Corporation Triboelectric generator
US8350249B1 (en) 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
US8350251B1 (en) * 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
US9035278B2 (en) 2011-09-26 2015-05-19 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
JP5813448B2 (en) * 2011-10-07 2015-11-17 シャープ株式会社 Method of manufacturing nitride semiconductor device
TWI474507B (en) * 2011-10-18 2015-02-21 Lextar Electronics Corp Manufacturing method of solid state light emitting element
JP5929115B2 (en) * 2011-11-17 2016-06-01 富士通株式会社 Semiconductor nanodevice
KR101279073B1 (en) * 2011-11-21 2013-06-26 포항공과대학교 산학협력단 Light emitting diode and manufacturing method thereof
FR2983639B1 (en) 2011-12-01 2014-07-18 Commissariat Energie Atomique Optoelectronic device comprising heart / shell structure nanowires
US8937297B2 (en) 2011-12-02 2015-01-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device including nanowires with a core/shell structure
DE102011056140A1 (en) * 2011-12-07 2013-06-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
FR2984599B1 (en) * 2011-12-20 2014-01-17 Commissariat Energie Atomique Process for producing a semiconductor micro- or nano-film, semiconductor structure comprising such a micro- or nan-wire, and method for producing a semiconductor structure
CN103999200B (en) * 2011-12-23 2016-12-28 英特尔公司 Have and comprise different materials orientation or the nano wire of composition or the common substrate semiconductor device of semiconductor body
US8785905B1 (en) * 2012-01-19 2014-07-22 Sandia Corporation Amber light-emitting diode comprising a group III-nitride nanowire active region
US9653286B2 (en) * 2012-02-14 2017-05-16 Hexagem Ab Gallium nitride nanowire based electronics
KR101326058B1 (en) * 2012-02-15 2013-11-07 주식회사 칩테크놀러지 Semiconductor Light Emitting Diode and Method for Manufacturing thereof
KR101326056B1 (en) * 2012-02-15 2013-11-07 주식회사 칩테크놀러지 Semiconductor Light Emitting Diode and Method for Manufacturing thereof
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
JP5862757B2 (en) * 2012-02-27 2016-02-16 富士通株式会社 Semiconductor laser
DE102012101718A1 (en) 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
KR101356701B1 (en) * 2012-03-22 2014-02-04 삼성전자주식회사 Light emitting device and method of manufacturing the same
FR2988904B1 (en) * 2012-04-02 2015-01-16 Commissariat Energie Atomique Optoelectronic nanowil semiconductor structure and method of manufacturing such structure
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
TW201344749A (en) * 2012-04-23 2013-11-01 Nanocrystal Asia Inc Method for production of selective growth masks using underfill dispensing and sintering
TW201411692A (en) * 2012-04-23 2014-03-16 Nanocrystal Asia Inc Method for production of selective growth masks using imprint lithography
JP5946333B2 (en) * 2012-06-07 2016-07-06 エルシード株式会社 Group III nitride semiconductor device and manufacturing method thereof
US9773666B2 (en) * 2012-06-18 2017-09-26 The United States Of America, As Represented By The Secretary Of The Navy Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
JP5886709B2 (en) * 2012-07-27 2016-03-16 日本電信電話株式会社 Method of manufacturing photonic crystal resonator and photonic crystal resonator
TWI476953B (en) * 2012-08-10 2015-03-11 Univ Nat Taiwan Semiconductor light-emitting device and manufacturing method thereof
CN103928582B (en) * 2012-08-28 2017-09-29 晶元光电股份有限公司 A kind of compound semiconductor element and preparation method thereof
EP2898547A4 (en) * 2012-09-18 2016-04-27 Glo Ab Nanopyramid sized opto-electronic structure and method for manufacturing of same
DE102012109460A1 (en) 2012-10-04 2014-04-10 Osram Opto Semiconductors Gmbh Method for producing a light-emitting diode display and light-emitting diode display
DE102012109594A1 (en) 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
FR2997557B1 (en) 2012-10-26 2016-01-01 Commissariat Energie Atomique Nanofil electronic device with transition metal buffer layer, method of growing at least one nanowil, and device manufacturing method
EP2912700A4 (en) * 2012-10-26 2016-04-06 Glo Ab Nanowire led structure and method for manufacturing the same
FR2997420B1 (en) * 2012-10-26 2017-02-24 Commissariat Energie Atomique Process for growing at least one nanofil from a two-step nitride transition metal layer
JP6322197B2 (en) 2012-10-26 2018-05-09 グロ アーベーGlo Ab A method of modifying a nanowire-sized photoelectric structure and selected portions thereof.
WO2014066379A1 (en) 2012-10-26 2014-05-01 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
FR2997551B1 (en) 2012-10-26 2015-12-25 Commissariat Energie Atomique Method of manufacturing semiconductor structure and semiconductor component comprising such a structure
FR2997558B1 (en) * 2012-10-26 2015-12-18 Aledia Optoelectric device and method for manufacturing the same
KR101898680B1 (en) * 2012-11-05 2018-09-13 삼성전자주식회사 Nano-structured light emitting device
KR20140064374A (en) 2012-11-20 2014-05-28 삼성전기주식회사 In nano wire, element using the same and method of manufacturing for in nano wire
KR101938010B1 (en) * 2012-11-22 2019-01-14 전북대학교산학협력단 Manufacturing method of diode
US8896101B2 (en) * 2012-12-21 2014-11-25 Intel Corporation Nonplanar III-N transistors with compositionally graded semiconductor channels
DE102013100291A1 (en) 2013-01-11 2014-07-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
KR101916274B1 (en) * 2013-01-24 2018-11-07 삼성전자주식회사 Semiconductor light emitting device and manufacturing method for the same
KR102022266B1 (en) 2013-01-29 2019-09-18 삼성전자주식회사 Method of manufacturing nano sturucture semiconductor light emitting device
KR101554032B1 (en) * 2013-01-29 2015-09-18 삼성전자주식회사 Nano sturucture semiconductor light emitting device
JP6205747B2 (en) * 2013-02-21 2017-10-04 富士通株式会社 Optical semiconductor device and manufacturing method thereof
US20160027656A1 (en) * 2013-03-14 2016-01-28 King Abdullah University Of Science And Technology Defect free single crystal thin layer
WO2014143991A1 (en) 2013-03-15 2014-09-18 Glo Ab Nanowire led structure with decreased leakage and method of making same
WO2014151034A1 (en) 2013-03-15 2014-09-25 Glo Ab High index dielectric film to increase extraction efficiency of nanowire leds
US20150280057A1 (en) 2013-03-15 2015-10-01 James R. Grandusky Methods of forming planar contacts to pseudomorphic electronic and optoelectronic devices
DE102013104273A1 (en) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Arrangement with columnar structure and an active zone
US9196787B2 (en) 2013-06-07 2015-11-24 Glo Ab Nanowire LED structure with decreased leakage and method of making same
CN103779400A (en) * 2013-06-09 2014-05-07 国家纳米科学中心 Composite electrode and preparation method thereof
JP6219506B2 (en) 2013-06-18 2017-10-25 グロ アーベーGlo Ab Insulating layer for planarization and definition of the active region of nanowire devices
DE102013211707A1 (en) * 2013-06-20 2014-12-24 Osram Opto Semiconductors Gmbh Arrangement with a carrier
JP6232611B2 (en) * 2013-07-02 2017-11-22 国立大学法人北海道大学 Light emitting element and manufacturing method thereof
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
US8999737B2 (en) 2013-08-27 2015-04-07 Glo Ab Method of making molded LED package
US9142745B2 (en) 2013-08-27 2015-09-22 Glo Ab Packaged LED device with castellations
US9257616B2 (en) 2013-08-27 2016-02-09 Glo Ab Molded LED package and method of making same
CN104465657B (en) * 2013-09-22 2017-10-20 中芯国际集成电路制造(上海)有限公司 Complementary TFET and its manufacture method
FR3011383B1 (en) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Method for manufacturing optoelectronic devices with electroluminescent diodes
FR3011381B1 (en) * 2013-09-30 2017-12-08 Aledia Optoelectronic device with light emitting diodes
WO2015061325A1 (en) 2013-10-21 2015-04-30 Sensor Electronic Technology, Inc. Heterostructure including a composite semiconductor layer
US9099573B2 (en) 2013-10-31 2015-08-04 Samsung Electronics Co., Ltd. Nano-structure semiconductor light emitting device
TW201525525A (en) 2013-12-09 2015-07-01 Glo Ab Optical display system
US9972750B2 (en) 2013-12-13 2018-05-15 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
FR3016082B1 (en) 2013-12-30 2017-05-05 Aledia Optoelectronic device with semiconductor elements and method of manufacturing the same
KR20150083329A (en) 2014-01-09 2015-07-17 삼성전자주식회사 Semiconductor light emitting device
KR20150086731A (en) 2014-01-20 2015-07-29 삼성전자주식회사 Semiconductor light-emitting device
CN103943754A (en) * 2014-03-06 2014-07-23 京东方科技集团股份有限公司 Electroluminescent device, manufacturing method of electroluminescent device and display device
KR20150113288A (en) * 2014-03-27 2015-10-08 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
JP6187394B2 (en) * 2014-06-18 2017-08-30 富士通株式会社 Manufacturing method of semiconductor nanowire and manufacturing method of semiconductor nanowire element
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
KR20160007987A (en) 2014-07-10 2016-01-21 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
KR20160008027A (en) 2014-07-11 2016-01-21 삼성전자주식회사 Semiconductor light emitting device and manufacturing method of the same
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US9921678B2 (en) 2014-08-05 2018-03-20 Georgia Tech Research Corporation Self-powered, ultra-sensitive, flexible tactile sensors based on contact electrification
WO2016022824A1 (en) 2014-08-08 2016-02-11 Glo Ab Pixilated display device based upon nanowire leds and method for making the same
KR20160025063A (en) 2014-08-25 2016-03-08 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
KR20160025391A (en) 2014-08-27 2016-03-08 삼성전자주식회사 Method of Fabricating Semiconductor Devices Using Nanowires
KR20160027431A (en) 2014-08-29 2016-03-10 삼성전자주식회사 Nano sturucture semiconductor light emitting device
US9343529B2 (en) 2014-09-05 2016-05-17 International Business Machines Corporation Method of formation of germanium nanowires on bulk substrates
US9620559B2 (en) 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
KR20160039753A (en) 2014-10-01 2016-04-12 삼성전자주식회사 Method of manufacturing nano-sturucture semiconductor light emitting device
KR20160053329A (en) 2014-11-03 2016-05-13 삼성전자주식회사 Semiconductor light emitting device and manufacturing method of the same
KR20160053346A (en) 2014-11-03 2016-05-13 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
DE102014117995A1 (en) * 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Semiconductor layer sequence for generating visible light and light emitting diode
CN107004706A (en) 2014-12-17 2017-08-01 英特尔公司 The integrated circuit lead and method associated there of the III group-III nitride structure reduced with defect
US9460921B2 (en) 2015-04-06 2016-10-04 The United States Of America, As Represented By The Secretary Of Commerce Nanowire article and processes for making and using same
US10425018B2 (en) 2015-05-19 2019-09-24 Georgia Tech Research Corporation Triboelectric nanogenerator for harvesting broadband kinetic impact energy
CN104916713B (en) * 2015-05-28 2017-04-05 东南大学 A kind of gallium nitride-base ultraviolet detector using photonic crystal as entrance window
US9590157B2 (en) 2015-06-04 2017-03-07 The Silanna Group Pty Ltd Efficient dual metal contact formation for a semiconductor device
FR3037341A1 (en) * 2015-06-10 2016-12-16 Centre Nat Rech Scient Method for manufacturing at least one type of nanostructures and structures comprising a plurality of such nanostructures
WO2016209283A1 (en) * 2015-06-26 2016-12-29 Intel Corporation Heteroepitaxial structures with high temperature stable substrate interface material
CA2992156A1 (en) 2015-07-13 2017-01-16 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
KR20180055803A (en) * 2015-07-13 2018-05-25 크래요나노 에이에스 Nanowire / Nano-Pyramid Shape Light Emitting Diode and Photodetector
US20180226242A1 (en) * 2015-07-31 2018-08-09 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
EP3127747A1 (en) * 2015-08-07 2017-02-08 Valeo Vision Lighting and/or signalling device for a motor vehicle
EP3144957A1 (en) * 2015-09-15 2017-03-22 Technische Universität München A method for fabricating a nanostructure
EP3145038A1 (en) * 2015-09-15 2017-03-22 Technische Universität München Nanowire laser structure and fabrication method
DE102016102876A1 (en) * 2016-02-18 2017-08-24 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
US9985190B2 (en) 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
CN105957801A (en) * 2016-05-31 2016-09-21 中国科学院半导体研究所 Gallium nitride nanocone and gallium nitride nanorod mixed array manufacturing method
US9892944B2 (en) 2016-06-23 2018-02-13 Sharp Kabushiki Kaisha Diodes offering asymmetric stability during fluidic assembly
US10249599B2 (en) 2016-06-29 2019-04-02 eLux, Inc. Laminated printed color conversion phosphor sheets
US9627437B1 (en) 2016-06-30 2017-04-18 Sharp Laboratories Of America, Inc. Patterned phosphors in through hole via (THV) glass
US9755110B1 (en) 2016-07-27 2017-09-05 Sharp Laboratories Of America, Inc. Substrate with topological features for steering fluidic assembly LED disks
US10243097B2 (en) 2016-09-09 2019-03-26 eLux Inc. Fluidic assembly using tunable suspension flow
US9917226B1 (en) 2016-09-15 2018-03-13 Sharp Kabushiki Kaisha Substrate features for enhanced fluidic assembly of electronic devices
US9837390B1 (en) 2016-11-07 2017-12-05 Corning Incorporated Systems and methods for creating fluidic assembly structures on a substrate
EP3352228B1 (en) * 2017-01-24 2019-09-25 OSRAM Opto Semiconductors GmbH Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
US10418499B2 (en) 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
EP3460858A1 (en) 2017-09-20 2019-03-27 Instytut Technologii Materialów Elektronicznych A method for producing light-emitting uv column structures and the structures produced using this method
CN109148654A (en) * 2018-08-30 2019-01-04 芜湖德豪润达光电科技有限公司 III group-III nitride epitaxial structure of non-polar plane and preparation method thereof

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030073680A1 (en) * 1995-09-20 2003-04-17 The Regents Of The University Of Michigan Amino ceramide-like compounds and therapeutic methods of use
RU2099808C1 (en) 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Process of growing of oriented systems of whiskers and gear for its implementation ( versions )
US5976957A (en) * 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
CN100344004C (en) * 1997-10-30 2007-10-17 住友电气工业株式会社 GaN single crystal substrate and method of making the same
US6596377B1 (en) * 2000-03-27 2003-07-22 Science & Technology Corporation @ Unm Thin film product and method of forming
MXPA03008935A (en) * 2001-03-30 2004-06-30 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom.
US7229498B2 (en) * 2002-10-29 2007-06-12 Midwest Research Institute Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
US7355216B2 (en) * 2002-12-09 2008-04-08 The Regents Of The University Of California Fluidic nanotubes and devices
JP4428921B2 (en) * 2002-12-13 2010-03-10 キヤノン株式会社 Nanostructure, electronic device, and manufacturing method thereof
US7445742B2 (en) * 2003-08-15 2008-11-04 Hewlett-Packard Development Company, L.P. Imprinting nanoscale patterns for catalysis and fuel cells
US7306631B2 (en) * 2004-03-30 2007-12-11 The Procter & Gamble Company Keratin dyeing compounds, keratin dyeing compositions containing them, and use thereof
KR100624419B1 (en) 2004-04-07 2006-09-19 삼성전자주식회사 Nanowire light emitting device and method of fabricating the same
US7107940B2 (en) 2004-07-29 2006-09-19 Abinanti T Michael Animal restraining apparatus
WO2006110163A2 (en) * 2004-08-20 2006-10-19 Yale University Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition
KR101169307B1 (en) 2004-08-31 2012-07-30 내셔널 유니버시티 오브 싱가포르 Nanostructures and method of making the same
TWI500072B (en) 2004-08-31 2015-09-11 Sophia School Corp Manufacturing method for light emitting element
US7345296B2 (en) * 2004-09-16 2008-03-18 Atomate Corporation Nanotube transistor and rectifying devices
US7303631B2 (en) * 2004-10-29 2007-12-04 Sharp Laboratories Of America, Inc. Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer
US20060223211A1 (en) * 2004-12-02 2006-10-05 The Regents Of The University Of California Semiconductor devices based on coalesced nano-rod arrays
US7309621B2 (en) * 2005-04-26 2007-12-18 Sharp Laboratories Of America, Inc. Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
US20070257264A1 (en) * 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
US7349613B2 (en) * 2006-01-24 2008-03-25 Hewlett-Packard Development Company, L.P. Photonic crystal devices including gain material and methods for using the same
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
JP5592610B2 (en) * 2006-03-10 2014-09-17 エステイーシー.ユーエヌエム Nanowire manufacturing method, group III nitride nanowire array, and GaN substrate structure
DE102006013245A1 (en) * 2006-03-22 2007-10-04 Infineon Technologies Ag Mold layer forming method, involves forming mold layer on one of surface sections of substrate after forming template, and removing template after applying mold layer, where opening is formed in mold layer via another surface section

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