BR112016016264A2 - Sistema de aquecimento, reator para processamento de pastilha, e método de aquecimento de uma superfície de aquecimento de um objeto até uma temperatura de processamento de ao menos 100 °c - Google Patents

Sistema de aquecimento, reator para processamento de pastilha, e método de aquecimento de uma superfície de aquecimento de um objeto até uma temperatura de processamento de ao menos 100 °c

Info

Publication number
BR112016016264A2
BR112016016264A2 BR112016016264A BR112016016264A BR112016016264A2 BR 112016016264 A2 BR112016016264 A2 BR 112016016264A2 BR 112016016264 A BR112016016264 A BR 112016016264A BR 112016016264 A BR112016016264 A BR 112016016264A BR 112016016264 A2 BR112016016264 A2 BR 112016016264A2
Authority
BR
Brazil
Prior art keywords
heating
processing
reactor
heating system
semiconductor light
Prior art date
Application number
BR112016016264A
Other languages
English (en)
Inventor
Möench Holger
Hans Derra Guenther
Gronenborn Stephan
Pekarski Pavel
Sophie Kolb Johanna
Gordon Conrads Ralf
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112016016264A2 publication Critical patent/BR112016016264A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

SISTEMA DE AQUECIMENTO, REATOR PARA PROCESSAMENTO DE PASTILHA, E MÉTODO DE AQUECIMENTO DE UMA SUPERFÍCIE DE AQUECIMENTO DE UM OBJETO ATÉ UMA TEMPERATURA DE PROCESSAMENTO DE AO MENOS 100 °C. A invenção descreve um sistema de aquecimento (100) e um método correspondente de aquecimento de uma superfície de aquecimento (180) de um objeto (150, 950) até uma temperatura de processamento de ao menos 100°C, sendo que o sistema de aquecimento (100) compreende fontes semicondutoras de luz (115), e que o sistema de aquecimento (100) é adaptado para aquecer um elemento de área da superfície de aquecimento (180) com ao menos 50 fontes semicondutoras de luz (115) ao mesmo tempo. O sistema de aquecimento (100) pode ser parte de um reator para processar estruturas semicondutoras. A luz emitida por meio das fontes semicondutoras de luz (115) se sobrepõe na superfície de aquecimento (180). As diferenças da característica de uma única fonte semicondutora de luz (115) podem ser embaçadas na superfície de aquecimento (180) de modo que se possibilite uma distribuição de temperatura homogênea através de uma superfície de processamento de, por exemplo, uma pastilha.
BR112016016264A 2014-01-17 2015-01-09 Sistema de aquecimento, reator para processamento de pastilha, e método de aquecimento de uma superfície de aquecimento de um objeto até uma temperatura de processamento de ao menos 100 °c BR112016016264A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14151613 2014-01-17
PCT/EP2015/050359 WO2015107009A1 (en) 2014-01-17 2015-01-09 Heating system comprising semiconductor light sources

Publications (1)

Publication Number Publication Date
BR112016016264A2 true BR112016016264A2 (pt) 2017-08-08

Family

ID=49955222

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016016264A BR112016016264A2 (pt) 2014-01-17 2015-01-09 Sistema de aquecimento, reator para processamento de pastilha, e método de aquecimento de uma superfície de aquecimento de um objeto até uma temperatura de processamento de ao menos 100 °c

Country Status (7)

Country Link
US (1) US10159113B2 (pt)
EP (1) EP3095128B1 (pt)
JP (1) JP6461168B2 (pt)
CN (1) CN106415810B (pt)
BR (1) BR112016016264A2 (pt)
RU (1) RU2669549C2 (pt)
WO (1) WO2015107009A1 (pt)

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RU2669549C2 (ru) 2018-10-11
US10159113B2 (en) 2018-12-18
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