CN101978475B - 屏蔽性盖加热器组件 - Google Patents
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Abstract
本发明提供了一种适于与等离子体处理室一同使用的屏蔽性盖加热器、具有屏蔽性盖加热器的等离子体处理室以及等离子体处理的方法。本发明的方法及设备增强了等离子体处理室中的等离子体位置的位置控制,且可用于蚀刻、沉积、注入及热处理系统,以及其它期望控制等离子体位置的应用。在一个实施例中,提供了一种屏蔽性盖加热器,其包含将加热器元件夹置于其间的铝底座及RF屏蔽件。
Description
技术领域
本发明的实施例大致主要半导体衬底处理系统。更具体地,本发明涉及用于等离子体处理系统的屏蔽性(shielded)盖加热器组件。
背景技术
在制造集成电路中,需要对多种处理参数进行精确控制,以在衬底内获得一致的结果以及可在衬底之间重现的结果。随着用于形成半导体器件的结构的几何尺寸限制接近技术极限,更严格的容限度(tolerance)及精密的加工控制对于制造的成功是重要的。然而,由于几何尺寸的缩减,精确的临界尺寸(critical dimension)及蚀刻处理的控制已经变得越来越困难。
许多半导体器件在等离子体存在的情况下进行处理。如果等离子体未均匀地位于衬底的上方,则处理结果也可能不均匀。
虽然已证明传统的等离子体处理室在较大的临界尺寸具有稳健的性能,但控制等离子体均匀度的现存技术为可改良等离子体均匀度的区块,以促成下一世代的次微米结构(如具有约55nm及超过此范围的临界尺寸)的成功制造。
本发明人已经发现对于用于对处理室的盖温度进行控制的加热器的设计进行改善在等离子体均匀度上具有有益的效果。
发明内容
本发明的实施例主要提供了一种屏蔽性盖加热器。其它实施例提供了用于控制等离子体处理室的盖温度的方法及设备。方法和设备增强了在等离子体处理室中的等离子体位置的位置控制,且可用于蚀刻、沉积、注入及热处理系统,以及期望控制等离子体位置的其它应用。
在一个实施例中,提供了一种屏蔽性盖加热器,其包含将加热器元件夹置于其间的铝底座与RF屏蔽件。热绝缘体设置于RF屏蔽件上。
在另一个实施例中,提供了一种屏蔽性盖加热器,其包含铝底座、RF屏蔽件及加热器元件。此底座具有形成于其内的、容纳加热器元件的沟槽。RF屏蔽件覆盖住该沟槽,以封闭住加热器元件。
在另一个实施例中,屏蔽性盖加热器包含与其耦接的电感器线圈。电感器线圈可选择地是可变电感器,由此使得能够调节电感,以在处理室中定位等离子体。
在另一个实施例中,提供了一种等离子体处理室,其包含:由盖所封闭住的腔室主体;设置于腔室主体中的衬底支撑件;邻近盖设置的线圈,以将RF功率耦合到腔室主体中的气体;以及耦合到盖的屏蔽性盖加热器。该盖加热器包含将加热器元件夹置于其间的铝底座及RF屏蔽件。该盖加热器系可选择地包含电感器线圈。
在另一个实施例中,提供一种转变等离子体处理室的处理,其包含:判定等离子体在处理室中的位置;选择耦接到盖加热器的电感器线圈的电感及/或位置,其会使得等离子体位置由所判定的位置移动到目标位置;以及利用具有所选择的电感及/或位置的电感器线圈来对衬底进行等离子体处理。
附图说明
为让本发明的上述特征更明显易懂,通过参考部分如附图所示的实施例,可以得到如上所述的本发明的更具体的描述。须注意的是,因为本发明可以容许其他等效实施例,所以附图仅揭露了本发明的特定实施例并因此并非用以限定本发明的范围。
图1是示例半导体衬底处理设备的示意图,其包含根据本发明的一个实施例的屏蔽性盖加热器;
图2A-B是屏蔽性盖加热器的两个实施例的示意截面图;
图3是图1的屏蔽性盖加热器的一个实施例的等角视图;
图4是图1的屏蔽性盖加热器的一个实施例的俯视图;
图5是屏蔽性盖加热器的一个实施例的局部前视图;
图6是屏蔽性盖加热器的一个实施例的局部后视图;
图7是屏蔽性盖加热器的另一实施例的局部侧视图;以及
图8是用等离子体处理衬底的方法的一个实施例的流程图。
为便于了解,在可能的情况下,附图中相同的附图标记表示对于附图公共的相同组件。也预料到实施例采用的组件和特征可应用到其它实施例而不需特别详述。
具体实施方式
图1图示了示例性等离子体处理室100的示意图,其具有本发明的屏蔽性盖加热器180的一个实施例。等离子体处理室100的特定实施例在图1中示出为蚀刻反应器,但是预期到屏蔽性盖加热器180可被有利地用在其它形式的等离子体处理室中,包含化学气相沉积室、物理气相沉积室、注入反应室(implantation chamber)、氮化反应室、等离子体退火室、等离子体处理室以及灰化反应室。因此,图1的等离子体处理室的实施例是用于说明的目的,并非用于限制本发明的范围。
处理室100一般包含腔室主体110、气体分配盘(gas panel)138及控制器140。腔室主体110包含围绕出处理容积(process volume)的底部128、侧壁130及盖120。侧壁130及底部128由传导材料(如不锈钢或铝)制成。盖120可由铝、不锈钢、陶瓷或其它合适的材料制成。
经由喷淋头(showerhead)或者是一个或多个喷嘴136而将来自气体分配盘138的处理气体提供到腔室主体110的处理容积内。在图1图示的实施例中,处理室100包含沿着腔室主体的侧壁130设置的多个喷嘴136以及在盖120下方居中设置的喷嘴136。设置在盖120中央的喷嘴136可以包含可独立控制的径向且面向下的气体出口埠。
控制器140包含中央处理单元(CPU)144、存储器142以及支持电路146。控制器140耦合到处理室100的部件,并控制该些部件以及在腔室主体110中执行的处理,且控制器140可以有助于与集成电路晶圆厂(fab)的数据库交换可选择的数据。
在图示的实施例中,盖120为实质上平坦的陶瓷构件。处理室100的其它实施例可具有其它型式的顶壁,如圆顶状的顶壁。在盖120的上方设置有包含一个或多个电感器线圈元件(图中图示为两个共轴的线圈组件)的天线112。天线112经由第一匹配网络170而耦接到射频(RF)等离子体功率源118。在等离子体处理期间,天线112经由功率源118所提供的RF功率而被供给能量,以维持由处理气体在腔室主体110的内部容积内所形成的等离子体106。
在一个实施例中,衬底基座组件116包含座组件162、底座组件114以及静电卡盘188。该座组件162将底座组件114耦接到腔室主体110的底部128。
静电卡盘188通常由陶瓷或类似的介电材料形成,且包括至少一个使用电源128控制的钳合电极186(clamping electrode)。在另一个实施例中,静电卡盘188可包括至少一个RF电极(未示出),该RF电极经由第二匹配网络124而耦接到衬底偏压的电源122。静电卡盘188可选择地包括一个或多个衬底加热器。在一个实施例中,可利用二个同心且可独立控制的电阻加热器(其显示为同心的加热器184A、184B)以控制衬底150的边缘到中心的温度分布。
静电卡盘188还可以包括例如沟槽的多个气体通道(未示出),其形成在卡盘的衬底支撑表面中并且流体耦接到热传递(或背侧)气体的源148。在操作中,将背侧气体(如,氦(He))于受控的压力下提供到气体通道中以增强静电卡盘188与衬底150之间的热传递。传统地,至少在静电卡盘的衬底支撑表面上提供可抵抗在处理衬底时使用的化学品及温度的涂层。
底座组件114通常由铝或其它金属材料形成。底座组件114包含一个或多个冷却通道,该冷却通道耦接到加热或冷却液体的源182。由源182经由通道提供的热传递流体(热传递流体可至少为一种气体(例如氟氯烷、氦或氮)或一种液体(例如水或油)),以控制底座组件114的温度,由此加热或冷却底座组件114,且由此在处理期间部分地控制置于底座组件114上的衬底150的温度。
使用多个传感器(在图1中未示出)监视基座组件116的温度(以及因此,衬底150的温度)。将在下文中进一步描述传感器经过基座组件116的路径。温度传感器(如光纤温度传感器)耦接到控制器140以提供基座组件116的温度分布的计量指示。
盖120的温度由屏蔽性盖加热器180控制。在一个实施例中,屏蔽性盖加热器180是由电源178提供能量的电阻加热器。在盖120由陶瓷材料制成的实施例中,屏蔽性盖加热器180可粘附或夹持到盖120的外表面。
图2A是置于盖120上的屏蔽性盖加热器180的一个实施例的局部剖面视图。屏蔽性盖加热器180通常包含传导底座202、加热器元件204以及RF屏蔽件206。加热器元件204夹置于传导底座202与RF屏蔽件206之间。加热器元件204一般包含嵌设在电绝缘体210中的电阻元件212。RF屏蔽件206充分地防止了电阻元件212影响由天线112产生的磁场及电场线穿过盖220的定位,使得等离子体106可更精确地定位在腔室主体110的内部容积中。
传导底座202一般具有足以在加热器元件204与盖120之间提供均匀热传递的足够质量。在一个实施例中,传导底座202由具有良好热传导特性的金属材料(如铝等)制成。传导底座202具有适于向盖220提供期望热分布的几何形状。
RF屏蔽件206通常由金属材料(如铝)制成。RF屏蔽件206可以是铝箔或板。在一个实施例中,RF屏蔽件206与传导底座202具有相同的平面形状。
可选择地,热绝缘体208(heat insulator)可设置在RF屏蔽件206上。热绝缘体208一般由对于磁场及电场具有较少影响的材料制成,如高温弹性体(例如硅氧树脂(silicone)或其它高温泡沫材料)。热绝缘体208可预防在高温时不慎接触盖加热器180时可能遭受的烧伤情形。
传导底座202、加热器元件204及RF屏蔽件206可使用紧固件而紧固、夹持在一起或通过合适的粘合剂固定。在一个实施例中,使用高温环氧树脂将屏蔽性盖加热器180的部件固定在一起。
图2B是可以用在处理室100中的屏蔽性盖加热器280的另一实施例的示意性截面图。屏蔽性盖加热器280一般包含传导底座282、加热器元件284及RF屏蔽件206。可选择的热绝缘体208可设置在RF屏蔽件206上。如上文中参照图2A的加热器元件204描述地构造加热器元件284。传导底座282实质上类似于前述传导底座202,而增加了在顶表面290中形成的沟槽286。沟槽286的尺寸确定为容纳加热器元件284。沟槽286的侧壁288具有足够使得当RF屏蔽件206设置于传导底座282的顶表面290上时可以将加热器元件284包围在沟槽286内的高度。
图3图示了屏蔽性盖加热器280的等角视图。屏蔽性盖加热器280一般包含第一部分302和第二部分304。每个部分都包括环状部件300和多个指状部件308、318。指状部件308、318从环状部件300径向向内延伸。部分302、304的环状部件300具有相同的径向尺寸,因此在耦接到一起时,部分302、304会形成大致圆形的平面形状。指状部件318一般比指状部件308更短,并且指状部件318在相邻指状部件308之间交织以形成类似轮辐的图案。
第一和第二部分302、304由至少一个桥连接器310耦接。在图3示出的实施例中,图示了二个桥连接器310、312。在一个实施例中,桥连接器中的至少一者(如桥连接器312)可包含电感器线圈314。桥连接器310、312中的至少一者耦接到设置在每一部分304、302中的加热器元件284,因此可以利用单个导线316而将屏蔽性盖加热器280耦接到电源178。
图4图示了在已移除RF屏蔽件206以暴露出加热器元件284的状态下的屏蔽性盖加热器280的俯视图。如图所示,加热器元件284可沿着其路径而为阶梯型(stepped),因此提供更大密度的加热能力。如下文中讨论的,加热器元件284的端部包含连接部402以有助于每一部分302、304的加热器元件的耦合。图4中也示出了在传导底座282中形成的螺纹孔404,以促进桥连接器310、312的紧固。
图5是示出了桥连接器310的屏蔽性盖加热器280的一个实施例的局部前视图。桥连接器310一般包含主体500,该主体500具有容纳紧固件504的多个孔洞502。紧固件504与形成在传导底座282中的螺纹孔404接合,由此将部分302、304紧固在一起。部分302、304可以包含台阶510,其与凸出部(tab)512接合,以沿着预先限定的定向相对于传导底座282定位主体500。
桥连接器310额外包含多个从其突出的销506。销506构造为电连接形成在加热器元件284的端部的连接部402。虽然在图5中未示出,销506通过主体500而耦合设置在部分302、304中的每一者中的每个加热器元件284的电阻元件。
可选择地,主体500可包含电耦接到部分302、304的底座282的导电材料。可替代地,主体500可由绝缘体制成。
图6图示了桥连接器312的一个实施例。桥连接器312如上所述地耦接到屏蔽性盖加热器280的部分302、304。也如前所述,桥连接器312包含电感器线圈314。电感器线圈314的尺寸可以确定为提供经设计以适于影响在反应室中的磁场及电场,以对等离子体106产生期望的效果电感(inductance)。在一个实施例中,电感器314是可变电感器,以允许在进行处理或原位处理之间调节电感值。电感器线圈314可与传导底座282隔离,或可替代地经由导线602、604而电耦接到底座282。
桥连接器312的主体600可以是传导性的,以电耦接部分302、304的传导底座282。可替代地,桥连接器的主体600可由介电材料制成,以电隔离部分302、304。
图7是屏蔽性盖加热器780的另一个实施例的局部俯视图。屏蔽性盖加热器780一般构造为与前述加热器180、280相似,而增加了可重新定位(repositionable)的电感器700。屏蔽性盖加热器780包含多个安装孔洞702,其允许电感器700可以紧固在任何数目的位置。因此,通过将电感器700紧固到不同组的安装孔洞702,可以按照需要改变电感器700沿着屏蔽性盖加热器780的位置以适合处理需求。
在一个实施例中,电感器700可与屏蔽性盖加热器780电绝缘。在一个实施例中,电感器700可经由接触销、安装紧固件或其它合适的方式而电耦接到屏蔽性盖加热器780的传导底座。
图8是在装备有屏蔽性盖加热器的处理室中对衬底进行等离子体处理的方法800的框图流程图。方法800通过在802处判定等离子体在处理室中的位置而开始。可通过经由光学方法、利用传感器、经验数据、处理结果的分析、模型化或其它合适的方式测量等离子体的性质而判定等离子体的位置。在804处,选择耦接到盖加热器的电感器线圈的电感和/或位置,而此将会使得等离子体的位置从所判定的位置移动到目标位置。在806处,利用具有所选择的电感和/或位置的电感器线圈,在等离子体存在的状态下处理衬底。在衬底上进行的处理可以从由蚀刻、化学气相沉积、物理气相沉积、注入、氮化、退火、等离子体处理及灰化等其它等离子体制程所组成的组中选择。
因此,提供了促进等离子体在处理室中定位的盖加热器。因为等离子体可置于更理想的位置,所以可以实现更均一且可预见的处理要求。
虽然前述内容关于本发明的实施例,但是可在未偏离本发明的基本范围的状态下完成本发明的其它及另外的实施例,且其范围由下列权利要求决定。
Claims (15)
1.一种屏蔽性盖加热器,包含:
环状热传导底座,其具有多个向内延伸的指,所述多个指形成类似轮辐的图案,所述指的远端不连接;
加热器元件,其设置于所述热传导底座上;以及
RF屏蔽件,其将所述加热器元件夹置在所述RF屏蔽件与所述热传导底座之间。
2.根据权利要求1所述的屏蔽性盖加热器,还包括:
热绝缘体,其设置在所述RF屏蔽件上。
3.根据权利要求1所述的屏蔽性盖加热器,其中,所述RF屏蔽件包括铝箔。
4.根据权利要求1所述的屏蔽性盖加热器,其中,所述RF屏蔽件包括铝板,所述铝板粘附到所述加热器元件。
5.根据权利要求1所述的屏蔽性盖加热器,其中,所述热传导底座包括:
沟槽,其容纳所述加热器元件。
6.根据权利要求1所述的屏蔽性盖加热器,其中,所述加热器元件包括:
第一加热器电路,其设置在所述热传导底座的第一部分上;以及
第二加热器电路,其设置在所述热传导底座的第二部分上,其中,所述第一加热器电路和所述第二加热器电路通过桥接所述热传导底座的所述第一部分和所述第二部分的连接器而耦接。
7.根据权利要求6所述的屏蔽性盖加热器,还包含:
电感器线圈,其耦接所述热传导底座的所述第一部分和所述第二部分。
8.根据权利要求1所述的屏蔽性盖加热器,还包含:
电感器线圈,其耦接到所述热传导底座。
9.根据权利要求8所述的屏蔽性盖加热器,其中,所述电感器线圈能够沿着所述热传导底座重新定位。
10.根据权利要求8所述的屏蔽性盖加热器,其中,所述电感器线圈是可变电感器。
11.一种等离子体处理室,包含:
腔室主体;
盖,其封闭所述腔室主体的内部容积;
衬底支撑件,其设置在所述内部容积内:
线圈,其邻近所述盖设置,以将RF功率耦合到所述腔室主体内的气体;以及
屏蔽性盖加热器,其耦接到所述盖,其中,所述盖加热器还包括:
环状传导底座,其具有多个向内延伸的指,所述多个指形成类似轮辐的图案,所述指的远端不连接;
加热器元件;以及
RF屏蔽件,其与所述传导底座夹置所述加热器元件。
12.根据权利要求11所述的等离子体处理室,其中,所述屏蔽性盖加热器还包括:
电感器线圈,其耦接到所述传导底座,并且其中所述电感器线圈能够沿着所述传导底座重新定位。
13.根据权利要求11所述的等离子体处理室,其中,所述屏蔽性盖加热器还包括:
电感器线圈,其耦接到所述传导底座,并且其中所述电感器线圈是可变电感器。
14.根据权利要求11所述的等离子体处理室,其中,所述热传导底座包括:
沟槽,其容纳所述加热器元件。
15.根据权利要求11所述的等离子体处理室,其中,所述加热器元件包括:
第一加热器电路,其设置在所述热传导底座的第一部分上;以及
第二加热器电路,其设置在所述热传导底座的第二部分上,其中,所述第一加热器电路和所述第二加热器电路通过桥接所述热传导底座的所述第一部分和所述第二部分的连接器而耦接。
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WO2009117612A2 (en) | 2009-09-24 |
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TWI517761B (zh) | 2016-01-11 |
US9362148B2 (en) | 2016-06-07 |
KR20110000658A (ko) | 2011-01-04 |
CN101978475A (zh) | 2011-02-16 |
KR101554123B1 (ko) | 2015-09-18 |
US20130189848A1 (en) | 2013-07-25 |
US10083816B2 (en) | 2018-09-25 |
US20160254123A1 (en) | 2016-09-01 |
WO2009117612A3 (en) | 2009-12-10 |
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