JP2011525719A - 低温pecvd用途用のペデスタルヒータ - Google Patents
低温pecvd用途用のペデスタルヒータ Download PDFInfo
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- JP2011525719A JP2011525719A JP2011516520A JP2011516520A JP2011525719A JP 2011525719 A JP2011525719 A JP 2011525719A JP 2011516520 A JP2011516520 A JP 2011516520A JP 2011516520 A JP2011516520 A JP 2011516520A JP 2011525719 A JP2011525719 A JP 2011525719A
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- pedestal
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000012545 processing Methods 0.000 claims abstract description 43
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000013011 mating Effects 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 19
- 239000003989 dielectric material Substances 0.000 abstract description 3
- 239000000088 plastic resin Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000004696 Poly ether ether ketone Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920002530 polyetherether ketone Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 210000005069 ears Anatomy 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (15)
- 半導体処理チャンバ用のペデスタルであって、
導電性材料を含む基板支持体;
前記基板支持体内部にカプセル化された加熱エレメント;および
一端において前記基板支持体に結合され、反対端において嵌合インターフェイスに結合されている導電性材料を含む中空シャフト
を備え、前記嵌合インターフェイスが、前記処理チャンバ上に配置された電源ソケットに結合され且つ前記中空シャフトから電気的に絶縁されている少なくとも1つの露出した電気コネクタを含む誘電性プラグを備えている、ペデスタル。 - 前記嵌合インターフェイスが、少なくとも部分的に外表面を通るように形成された複数のスロットをさらに備えている、請求項1に記載のペデスタル。
- 前記誘電性プラグが、対応するスロットと嵌合する複数の延長部材を備えている、請求項2に記載のペデスタル。
- 前記誘電性プラグが円形横断面を有しており、前記複数の延長部材の各々がそこから半径方向に延びている、請求項3に記載のペデスタル。
- 前記複数の延長部材が等間隔に配置されている、請求項4に記載のペデスタル。
- 前記嵌合インターフェイスが、その外部表面上に円周リングをさらに備えている、請求項1に記載のペデスタル。
- 前記円周リングが、前記処理チャンバの密封を促進するOリングを備えている、請求項6に記載のペデスタル。
- 前記基板支持体が、支持表面上に配置された複数の突起を備える基板受入表面を含み、前記複数の突起の各々が、セラミック材料で作製されているか、または被覆されている、請求項1に記載のペデスタル。
- 前記少なくとも1つの露出した電気コネクタは、前記中空シャフト内に配置された導電性リード線と電気的に導通している、請求項1に記載のペデスタル。
- 半導体処理チャンバ用のペデスタルであって、
導電性材料を含む基板支持体;
前記基板支持体内部にカプセル化された加熱エレメント;
一端において前記基板支持体に結合され、他端においてベース組立体に結合されている導電性材料を含む中空シャフト
を備え、前記ベース組立体が、
内部容積を有するスロット付き導電性部分;および
前記内部容積内に配置された誘電性プラグであって、誘電性プラグを縦方向に通り且つ各々が前記スロット付き導電性部分から電気的に絶縁されている1つまたは複数の導電性部材を含む誘電性プラグ
を備えている、ペデスタル。 - 前記1つまたは複数の導電性部材の各々の少なくとも一部分が前記ベース組立体の外に延びている、請求項10に記載のペデスタル。
- 前記スロット付き導電性部分が前記中空シャフトの延長部である、請求項10に記載のペデスタル。
- 前記誘電性プラグが、前記スロット付き導電性部分内の対応するスロットと嵌合する複数の延長部材を備えている、請求項10に記載のペデスタル。
- 前記誘電性プラグが円形横断面を有しており、前記複数の延長部材の各々がそこから半径方向に延びている、請求項13に記載のペデスタル。
- 前記複数の延長部材が等間隔に配置されている、請求項14に記載のペデスタル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7526208P | 2008-06-24 | 2008-06-24 | |
US61/075,262 | 2008-06-24 | ||
PCT/US2009/048253 WO2010008827A2 (en) | 2008-06-24 | 2009-06-23 | Pedestal heater for low temperature pecvd application |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011525719A true JP2011525719A (ja) | 2011-09-22 |
Family
ID=41429941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011516520A Pending JP2011525719A (ja) | 2008-06-24 | 2009-06-23 | 低温pecvd用途用のペデスタルヒータ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090314208A1 (ja) |
JP (1) | JP2011525719A (ja) |
KR (1) | KR101560138B1 (ja) |
CN (1) | CN102077338A (ja) |
TW (1) | TWI444501B (ja) |
WO (1) | WO2010008827A2 (ja) |
Cited By (8)
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JP2013514669A (ja) * | 2009-12-18 | 2013-04-25 | アプライド マテリアルズ インコーポレイテッド | 広範囲ウエハ温度制御のための多機能ヒータ/冷却装置ペデスタル |
KR20150144139A (ko) * | 2014-06-16 | 2015-12-24 | 주식회사 원익아이피에스 | 커넥터 조립체, 기판지지대 및 그를 가지는 기판처리장치 |
KR20190042523A (ko) * | 2011-07-15 | 2019-04-24 | 에이에스엠 저펜 가부시기가이샤 | 웨이퍼 지지 디바이스 및 그 제조 방법 그리고 반도체 가공 장치 |
JP2019519685A (ja) * | 2016-06-14 | 2019-07-11 | アイクストロン、エスイー | コーティング装置およびコーティング方法 |
KR102155664B1 (ko) * | 2019-09-25 | 2020-09-15 | 주식회사 넵시스 | 박막증착장치 |
JP2020532869A (ja) * | 2017-09-05 | 2020-11-12 | ラム リサーチ コーポレーションLam Research Corporation | 一体型サーマルチョークによる高温rf接続 |
JP2022510433A (ja) * | 2018-12-06 | 2022-01-26 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバの耐食性接地シールド |
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JP7460626B2 (ja) | 2018-12-06 | 2024-04-02 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバの耐食性接地シールド |
KR102155664B1 (ko) * | 2019-09-25 | 2020-09-15 | 주식회사 넵시스 | 박막증착장치 |
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US20090314208A1 (en) | 2009-12-24 |
TWI444501B (zh) | 2014-07-11 |
WO2010008827A3 (en) | 2010-04-15 |
TW201016882A (en) | 2010-05-01 |
KR101560138B1 (ko) | 2015-10-14 |
KR20110033925A (ko) | 2011-04-01 |
CN102077338A (zh) | 2011-05-25 |
WO2010008827A2 (en) | 2010-01-21 |
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