KR100804169B1 - 박막증착챔버용 서셉터 - Google Patents
박막증착챔버용 서셉터 Download PDFInfo
- Publication number
- KR100804169B1 KR100804169B1 KR1020050136268A KR20050136268A KR100804169B1 KR 100804169 B1 KR100804169 B1 KR 100804169B1 KR 1020050136268 A KR1020050136268 A KR 1020050136268A KR 20050136268 A KR20050136268 A KR 20050136268A KR 100804169 B1 KR100804169 B1 KR 100804169B1
- Authority
- KR
- South Korea
- Prior art keywords
- support plate
- wafer
- susceptor
- thin film
- wafer support
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title description 3
- 238000000151 deposition Methods 0.000 title 1
- 239000011261 inert gas Substances 0.000 claims abstract description 23
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 238000007666 vacuum forming Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 5
- 230000003028 elevating effect Effects 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
Description
Claims (6)
- 웨이퍼(w)가 안착되는 곳으로서 히터(H)가 내장되고 가장자리측에 다수의 분사홀(111)이 형성된 웨이퍼지지플레이트(110);상기 웨이퍼지지플레이트(110)를 지지하는 것으로서, 불활성가스가 공급되는 불활성가스통로(121)가 형성된 샤프트(120)와;상기 웨이퍼지지플레이트(110)의 하부에 결합되는 것으로서, 상기 분사홀(111)을 상기 불활성가스통로(121)와 연통시키기 위한 내부공간(131)이 형성된 유로형성커버(130);를 포함하는 것을 특징으로 하는 박막증착챔버용 서셉터.
- 제1항에 있어서,상기 웨이퍼지지플레이트(110)의 대략 중앙 내부에는, 상기 불활성가스통로(121)와 연통된 후 상기 내부공간(131)으로 연통되는 매개유로(111a)가 형성된 것을 특징으로 하는 박막증착챔버용 서셉터.
- 제1항에 있어서,상기 샤프트(120)에는 진공압을 형성하기 위한 진공형성통로(123)가 형성되어 있고;상기 웨이퍼지지플레이트(110)의 상부에는, 상기 웨이퍼(w)가 올려지는 다수개의 돌기(112)와, 상기 돌기(112)들 사이에 형성되는 것으로서 상기 진공형성통로 (123)와 연통되는 흡착홀(113)을 가지는 안착부(110a)가 형성된 것;을 특징으로 하는 박막증착챔버용 서셉터.
- 제1항에 있어서,상기 유로형성커버(130)는 샤프트(120)가 관통될 수 있도록 관통홀(139)이 형성되어 전체적으로 환형 형상을 가지는 것을 특징으로 하는 박막증착챔버용 서셉터.
- 제4항에 있어서,상기 유로형성커버(130)는, 그 외주에 형성된 외주환가장자리(130a)와 내주에 형성된 내주환가장자리(130b)를 가지며, 상기 외주환가장자리(130a)와 내주환가장자리(130b)는 상방으로 돌출된 형상을 가짐으로써 상기 외주환가장자리(130a)와 내주환가장자리(130b) 사이에는 내부공간(131)이 형성된 것을 특징으로 하는 박막증착챔버용 서셉터.
- 제1항에 있어서,상기 웨이퍼지지플레이트(110)에는 상기 웨이퍼(w)를 승강시키기 위한 지지핀(미도시)이 관통되는 제1지지핀관통공(115)과, 상기 제1지지핀관통공(115)의 하부측에 제2지지핀관통공(135)이 형성되고 상기 유로형성커버(130)를 관통하는 체결부재(136)가 체결되는 나사공이 단차지게 형성됨으로써,상기 웨이퍼지지플레이트(110)의 하부에서 상기 제1,2지지핀관통공(115)(135)을 관통하는 상기 지지핀이 상기 웨이퍼지지플레이트(110)의 상부로 돌출될 수 있는 것을 특징으로 하는 박막증착챔버용 서셉터.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050136268A KR100804169B1 (ko) | 2005-12-31 | 2005-12-31 | 박막증착챔버용 서셉터 |
JP2006254555A JP2007182622A (ja) | 2005-12-31 | 2006-09-20 | 薄膜蒸着用ヒータ |
TW095142558A TW200725703A (en) | 2005-12-31 | 2006-11-17 | Heater for depositing thin film |
CNA2006101448608A CN1990903A (zh) | 2005-12-31 | 2006-11-23 | 用于沉积薄膜的加热器 |
US11/564,554 US20070151517A1 (en) | 2005-12-31 | 2006-11-29 | Heater for depositing thin film |
DE102006056973A DE102006056973A1 (de) | 2005-12-31 | 2006-11-30 | Heizeinrichtung zum Ablagern einer Dünnschicht |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050136268A KR100804169B1 (ko) | 2005-12-31 | 2005-12-31 | 박막증착챔버용 서셉터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070072233A KR20070072233A (ko) | 2007-07-04 |
KR100804169B1 true KR100804169B1 (ko) | 2008-02-18 |
Family
ID=38135960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050136268A KR100804169B1 (ko) | 2005-12-31 | 2005-12-31 | 박막증착챔버용 서셉터 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070151517A1 (ko) |
JP (1) | JP2007182622A (ko) |
KR (1) | KR100804169B1 (ko) |
CN (1) | CN1990903A (ko) |
DE (1) | DE102006056973A1 (ko) |
TW (1) | TW200725703A (ko) |
Cited By (1)
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---|---|---|---|---|
WO2021127272A1 (en) * | 2019-12-20 | 2021-06-24 | Lam Research Corporation | Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity |
Families Citing this family (16)
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---|---|---|---|---|
KR100901457B1 (ko) * | 2007-11-15 | 2009-06-08 | 세메스 주식회사 | 기판 처리 장치 |
CN102077338A (zh) * | 2008-06-24 | 2011-05-25 | 应用材料股份有限公司 | 用于低温pecvd应用的基座加热器 |
US20110024049A1 (en) * | 2009-07-30 | 2011-02-03 | c/o Lam Research Corporation | Light-up prevention in electrostatic chucks |
CN102214730A (zh) * | 2010-04-12 | 2011-10-12 | 无锡尚德太阳能电力有限公司 | 沉积蒸发源 |
CN104620371B (zh) * | 2012-08-31 | 2017-10-31 | 联达科技设备私人有限公司 | 用于晶圆和膜片架的单个超平面晶圆台结构 |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
US9738975B2 (en) * | 2015-05-12 | 2017-08-22 | Lam Research Corporation | Substrate pedestal module including backside gas delivery tube and method of making |
CN105441882B (zh) * | 2015-11-20 | 2018-04-24 | 苏州赛森电子科技有限公司 | 溅射工艺中的批量硅片衬底处理装置 |
JP1575661S (ko) * | 2015-11-24 | 2017-05-08 | ||
US10971352B2 (en) | 2018-07-16 | 2021-04-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Cleaning method and apparatus |
USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
USD1012997S1 (en) * | 2020-09-18 | 2024-01-30 | Ksm Component Co., Ltd. | Ceramic heater |
USD1012998S1 (en) * | 2020-09-18 | 2024-01-30 | Ksm Component Co., Ltd. | Ceramic heater |
USD1013750S1 (en) * | 2020-09-18 | 2024-02-06 | Ksm Component Co., Ltd. | Ceramic heater |
KR102475295B1 (ko) * | 2020-10-08 | 2022-12-08 | 주식회사 메카로 | 비대칭 열선 구조를 가진 페데스탈 히터 블럭 |
CN114622187A (zh) * | 2022-03-23 | 2022-06-14 | 广东省智能机器人研究院 | 一种mocvd设备的加热装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457712A (en) * | 1987-08-28 | 1989-03-06 | Sumitomo Metal Ind | Vapor growth device |
JPH03108354A (ja) * | 1989-09-21 | 1991-05-08 | Fujitsu Ltd | 半導体製造装置 |
JPH08302473A (ja) * | 1995-04-28 | 1996-11-19 | Anelva Corp | Cvd装置 |
JPH09153459A (ja) * | 1995-11-29 | 1997-06-10 | Nec Yamagata Ltd | ウェハ保持機構 |
US6296712B1 (en) | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
KR20020036459A (ko) * | 2000-11-10 | 2002-05-16 | 고석태 | 퍼지 기능을 가지는 기판 처리 장치의 기판 지지 기구 |
KR20040038753A (ko) * | 2002-10-29 | 2004-05-08 | 닛폰 하츠죠 가부시키가이샤 | 성막용 장치 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6730175B2 (en) * | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
-
2005
- 2005-12-31 KR KR1020050136268A patent/KR100804169B1/ko active IP Right Grant
-
2006
- 2006-09-20 JP JP2006254555A patent/JP2007182622A/ja active Pending
- 2006-11-17 TW TW095142558A patent/TW200725703A/zh unknown
- 2006-11-23 CN CNA2006101448608A patent/CN1990903A/zh active Pending
- 2006-11-29 US US11/564,554 patent/US20070151517A1/en not_active Abandoned
- 2006-11-30 DE DE102006056973A patent/DE102006056973A1/de not_active Ceased
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457712A (en) * | 1987-08-28 | 1989-03-06 | Sumitomo Metal Ind | Vapor growth device |
JPH03108354A (ja) * | 1989-09-21 | 1991-05-08 | Fujitsu Ltd | 半導体製造装置 |
JPH08302473A (ja) * | 1995-04-28 | 1996-11-19 | Anelva Corp | Cvd装置 |
JPH09153459A (ja) * | 1995-11-29 | 1997-06-10 | Nec Yamagata Ltd | ウェハ保持機構 |
US6296712B1 (en) | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
KR20020036459A (ko) * | 2000-11-10 | 2002-05-16 | 고석태 | 퍼지 기능을 가지는 기판 처리 장치의 기판 지지 기구 |
KR20040038753A (ko) * | 2002-10-29 | 2004-05-08 | 닛폰 하츠죠 가부시키가이샤 | 성막용 장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021127272A1 (en) * | 2019-12-20 | 2021-06-24 | Lam Research Corporation | Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity |
Also Published As
Publication number | Publication date |
---|---|
US20070151517A1 (en) | 2007-07-05 |
KR20070072233A (ko) | 2007-07-04 |
TW200725703A (en) | 2007-07-01 |
DE102006056973A1 (de) | 2007-07-05 |
JP2007182622A (ja) | 2007-07-19 |
CN1990903A (zh) | 2007-07-04 |
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