JPS6457712A - Vapor growth device - Google Patents

Abstract

PURPOSE:To form a uniform thin-film, and to improve operating efficiency by mounting gas-flow control bodies being radially extended in the radial direction of a susceptor and supplying a sample with a source gas in a relative concentric rotatable manner to the susceptor on the sample holding side of the susceptor and narrowing source-gas flowing spaces in the control bodies toward the outside diameter side of the susceptor. CONSTITUTION:Source-gas flowing spaces in gas-flow control bodies 8 are supplied with an silicon source gas by using a source-gas supply pipe 7 while the inside of a reaction vessel 1 is fed with a purge gas by employing a purge-gas supply pipe 9, and the silicon source gas is controlled and guided by the gas-flow control bodies 8. When a susceptor 6 on which samples A, A... are placed is turned while lighting lamps 10, silicon thin-films are formed onto the surfaces of the samples A, A... The gas-flow control bodies 8 constitute source-gas flowing sections 8B, 8B... extended radially in the radial direction of the susceptor 6 to the four quarters from a central section 8A. Each source-gas flowing section 8B is unified respectively by combining a pair of parallel side plates 8a, 8a extended in the radial direction of the susceptor 6 and a top plate 8b, height of which is lowered toward the outside diameter side of the susceptor 6.